ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • Wiley-Blackwell  (10,008)
  • American Institute of Physics (AIP)  (5,187)
  • 1985-1989  (15,195)
  • 1970-1974
  • 1950-1954
  • 1986  (15,195)
Collection
Keywords
Publisher
Years
  • 1985-1989  (15,195)
  • 1970-1974
  • 1950-1954
Year
  • 1
    Electronic Resource
    Electronic Resource
    Mathematical aspects of quantum fluids. II. Nonrotating 4He and Clebsch representations of symplectic two-cocycles (1986)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 27 (1986), S. 2437-2444 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: For nonrotating and rotating 4He, the formulas for the Poisson brackets and their canonical representations are shown to be particular cases of general Hamiltonian maps associated to symplectic two-cocycles on semidirect product Lie algebras of the type g(semidirect product)(W⊕V*⊕V).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.526983
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Superunitary reduction of the orthosymplectic supertableaux (1986)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 27 (1986), S. 1980-1986 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: The supertableaux of the orthosymplectic groups OSP(2ν||2p) and OSP(2ν+1||2p) are decomposed in sums of supertableaux of the superunitary group SU(ν||p).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.527015
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Closed, analytic, boson realizations for Sp(4) (1986)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 27 (1986), S. 1987-1993 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: The problem of determing a boson realization for an arbitrary irrep of the unitary simplectic algebra Sp(2d) [or of the corresponding discrete unitary irreps of the unbounded algebra Sp(2d,R)] has been solved completely in recent papers by Deenen and Quesne [J. Deenen and C. Quesne, J. Math. Phys. 23, 878, 2004 (1982); 25, 1638 (1984); 26, 2705 (1985)] and by Moshinsky and co-workers [O. Castaños, E. Chacón, M. Moshinsky, and C. Quesne, J. Math. Phys. 26, 2107 (1985); M. Moshinsky, "Boson realization of symplectic algebras,'' to be published]. This solution is not known in closed analytic form except for d=1 and for special classes of irreps for d〉1. A different method of obtaining a boson realization that solves the full problem for Sp(4) is described. The method utilizes the chain Sp(2d)&supuline;SU(2)×SU(2) ×⋅⋅⋅×SU(2) (d times), which, for d≥4, does not provide a complete set of quantum numbers. Though a simple solution of the missing label problem can be given, this solution does not help in the construction of a mapping algorithm for general d.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.527016
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Erratum: Functional integrals for spin-Bose systems [J. Math. Phys. 27, 221 (1986)] (1986)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 27 (1986), S. 1492-1492 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.527109
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Is there action-at-a-distance linear confinement? (1986)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 27 (1986), S. 1015-1022 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: The possilibity of constructing an action-at-a-distance form of linear confinement is demonstrated. Using the Fokker–Wheeler–Feynman action principle, known from classical action-at-a-distance electrodynamics, with an action containing the relativistically invariant two-particle Heaviside step function, equations of motion and appropriate potentials exhibiting the linearity of their behavior are derived. The plausibility of the generators of motion describing dynamics with the linear potentials is verified on the simple circular-orbit model of a two-component system, and the expected energy spectrum in terms of semiclassical quantization is obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.527195
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Action-at-a-distance linear potentials and conformal conservation laws (1986)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 27 (1986), S. 1023-1026 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: As a consequence of invariance under the full conformal group of transformations, 15 proper conserved quantities are derived for the system of two massive particles interacting via classical action-at-a-distance linear potentials that have been found in the preceding paper [J. Weiss, J. Math. Phys. 27, 1015 (1986)] in terms of the step θ function Lagrangian.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.527196
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Group-related coherent states (1986)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 27 (1986), S. 2282-2289 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: Coherent states defined with respect to an irreducible ray representation u: g→ug, g∈G, of an arbitrary locally compact separable group G are examined. It is shown that the following conditions (a)–(d) are equivalent: (a) u admits coherent states, (b) u is square integrable, (c) the W*-system implemented by u is integrable, and (d) u is a subrepresentation of the left regular c-representation, where c is the respective multiplier of u. Furthermore, the group theoretical background of what is called the "P-representation of observables'' associated with coherent states is investigated: It is shown that the P-representation (which corresponds to a covariant semispectral measure) fulfills a certain maximality requirement. The P-representation can be used to represent the quantum system in question on the Hilbert space L2(G,dg) of square-integrable functions (with respect to Haar measure dg) on the kinematical group G.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.527000
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Conformal transformations and viscous fluids in general relativity (1986)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 27 (1986), S. 2336-2339 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: It is shown that viscous fluid solutions can be obtained by performing conformal transformations of vacuum solutions of Einstein's field equations. The solutions obtained by such a procedure can be matched, under certain conditions, to their respective original vacuum metrics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.527004
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    An example of affine collineation in the Robertson–Walker metric (1986)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 27 (1986), S. 2360-2361 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: An affine collineation for the Robertson–Walker metric is found. It implies a condition on the metric that is compatible with Einstein's equations for a perfect fluid satisfying the Hawking–Ellis energy conditions. It is shown how the geodesics of the metric are obtained from the constant of motion associated to the affine collineation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.527007
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Four-dimensional boson field theory. II. Existence (1986)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 27 (1986), S. 2379-2393 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: The existence of the continuum, quantum field theory found by Baker and Johnson [G. A. Baker, Jr. and J. D. Johnson, J. Phys. A 18, L261 (1985)] to be nontrivial is proved rigorously. It is proved to satisfy all usual requirements of such a field theory, except rotational invariance. Currently known information is consistent with rotational invariance however. Most of the usual properties of other known Euclidean boson quantum field theories hold here, in a somewhat weakened form. Summability of the sufficiently strongly ultraviolet cutoff bare coupling constant perturbation series is proved as well as a nonzero radius of convergence for high-temperature expansions of the corresponding continuous-spin Ising model. The description of the theory by these two series methods is shown to be equivalent. The field theory is probably not asymptotically free.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.527009
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 11
    Electronic Resource
    Electronic Resource
    Conformal quantum Yang–Mills (1986)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 27 (1986), S. 2409-2414 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: Conformally covariant quantization of non-Abelian gauge theory is presented, and the invariant propagators needed for perturbative calculations are found. The vector potential acquires a richer gauge structure displayed in the larger Gupta–Bleuler triplet whose center is occupied by conformal QED. Path integral formulation and BRS invariance are shown on a formal level in one covariant gauge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.526979
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 12
    Electronic Resource
    Electronic Resource
    The Schwinger–DeWitt proper-time method for odd-dimensional gauge theory (1986)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 27 (1986), S. 2434-2436 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: The Schwinger–DeWitt proper-time method (WKB expansion) is applied to calculate the anomaly in odd-dimensional gauge theories. The parity violating part of effective action for gauge theory in odd dimensions with massless fermion is calculated explicitly and efficiently by this method. It is shown to be precisely the local Chern–Simons term.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.527392
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 13
    Electronic Resource
    Electronic Resource
    Mobility and measurements in nonlinear wave mechanics (1986)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 27 (1986), S. 1796-1799 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: The theory based on the nonlinear Schrödinger equation with an additional term λ(ψ¯ψ)αψ is investigated. The standard quantum mechanical interpretation of ψ is assumed at the beginning of the considerations. It turns out that every finite set of pure states can be transformed with the aid of an adequate time sequence of external potentials into a set of pairwise nearly orthogonal states. As a consequence, there exist measurements more selective than quantum ones. In particular, it is possible to discriminate between various mixtures of states that are equivalent in quantum mechanics. The possibility of existence of deterministic measurements is also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.527046
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 14
    Electronic Resource
    Electronic Resource
    On the summation of the Birkhoff–Gustavson normal form of an anharmonic oscillator (1986)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 27 (1986), S. 1806-1812 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: The classical Birkhoff–Gustavson normal form (BGNF) has played an important role in finding approximate constants of motion, and semiclassical energies. In this paper, this role is examined in detail for the well-known anharmonic oscillator H=1/2(p2+x2+gx4). It is shown that, with appropriate restrictions, this is the only perturbation series that preserves the period of this system. This series has a nonzero radius of convergence in contrast to the zero radius of convergence of its quantum analog, the Rayleigh–Schrödinger perturbation series. In addition, the BGNF is generated to high order, and a technique is given based on Padé approximants for summing this series. The summation of this series makes possible an accurate comparison of torus quantization energies with the known quantum energies over the entire range of quantum numbers. This example also demonstrates that divergence of the BGNF series of a Hamiltonian is not sufficient to refute its global integrability.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.527048
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 15
    Electronic Resource
    Electronic Resource
    Generalized conditions for the decoupling theorem of quantum field theory in Minkowski space with particles of vanishingly small masses (1986)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 27 (1986), S. 1879-1882 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: The proof of the decoupling theorem of quantum field theory given earlier [E. B. Manoukian, J. Math. Phys. 26, 1065 (1985)] in Minkowski space, in the distributional sense, for theories involving particles with vanishingly small masses as well is extended under more general conditions, thus being applicable to a larger class of graphs. All subtractions of renormalization are carried out at the origin of momentum space with the degree of divergence of a subtraction coinciding with the dimensionality of the corresponding subdiagram.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.527056
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 16
    Electronic Resource
    Electronic Resource
    Simple waves for equation of potential, nonstationary flow of compressible gas (1986)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 27 (1986), S. 1906-1915 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: Certain classes of the exact solution of the equation of nonstationary potential flow of a compressible gas are found. The method described by Kalinowski [M. W. Kalinowski, J. Math. Phys. 25, 2620 (1984); Lett. Math. Phys. 6, 17 (1983); 7, 479 (1983)] is applied. These considerations are carried out locally at an established point of space of a hodograph. Some algebraic properties of simple integral elements are analyzed, and certain exact classes of solutions are constructed. Finally a certain physical analysis of the achieved results is carried out.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.527059
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 17
    Electronic Resource
    Electronic Resource
    Erratum: Structural analysis and elementary representations of SL(4, R) and GL(4, R) and their covering groups [J. Math. Phys. 27, 883 (1986)] (1986)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 27 (1986), S. 1927-1927 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.527062
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 18
    Electronic Resource
    Electronic Resource
    Generalized Burgers equations and Euler–Painlevé transcendents. I (1986)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 27 (1986), S. 1506-1522 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: Initial-value problems for the generalized Burgers equation (GBE) ut+u βux+λuα =(δ/2)uxx are discussed for the single hump type of initial data—both continuous and discontinuous. The numerical solution is carried to the self-similar "intermediate asymptotic'' regime when the solution is given analytically by the self-similar form. The nonlinear (transformed) ordinary differential equations (ODE's) describing the self-similar form are generalizations of a class discussed by Euler and Painlevé and quoted by Kamke. These ODE's are new, and it is postulated that they characterize GBE's in the same manner as the Painlevé equations categorize the Kortweg–de Vries (KdV) type. A connection problem for some related ODE's satisfying proper asymptotic conditions at x=±∞, is solved. The range of amplitude parameter is found for which the solution of the connection problem exists. The other solutions of the above GBE, which display several interesting features such as peaking, breaking, and a long shelf on the left for negative values of the damping coefficient λ, are also discussed. The results are compared with those holding for the modified KdV equation with damping.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.527111
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 19
    Electronic Resource
    Electronic Resource
    Compatibility of weak rigidity with some types of elastic schemes (1986)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 27 (1986), S. 1048-1055 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: The behavior of the hypoelastic-Synge, hypoelastic-Maugin, and hypoelastic-Carter and Quintana almost-thermodynamic material schemes, under weak rigidity hypotheses, is studied. In every case, the absence of principal transverse shock waves (or the vanishing of the corresponding speeds) is obtained. The same result follows for the longitudinal shock waves when the Lamé coefficient μ does not vanish. A definition of an elastic almost-thermodynamic material scheme based on the Fermi–Walker transport is proposed and compared with the above elastic schemes. The speeds of the principal shock waves associated are attained and its compatibility with the Ferrando–Olivert incompressibility condition is proved. In the presence of weak rigidity the elastic schemes here defined lead (assuming μ≠0) to the Born-rigidity condition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.527146
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 20
    Electronic Resource
    Electronic Resource
    A generalization of Penrose's helicity theorem for space-times with nonzero dual mass (1986)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 27 (1986), S. 1059-1065 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: An algebraic definition of the helicity operator H is proposed for vacuum stationary and asymptotically flat wormholes (i.e., space-times where the manifold of orbits of the stationary Killing field has S2×R topology). The definition avoids the use of momentum space or Fourier decomposition of the gravitational degrees of freedom into positive and negative frequency parts, and is essentially geared to emphasize the role of nontrivial topology. It is obtained via the introduction of a total spin vector Sα derived from the dual Bondi four-momentum *Pα, both vectors originating in the presence of nontrivial homotopy groups. (Space-times with nonzero dual mass can be characterized by a conformal null boundary I having the topology of an S1 fiber bundle over S2 with possible identifications along the fiber—lens space—or equivalently vanishing Bondi–News.) It is shown that Sα is a constant multiple of Pα, the total Bondi four-momentum, and if in addition the space-time admits a point at spacelike infinity, there is strong support for the past limit of Sα to be a null vector. This can be viewed as a generalization of Penrose's result on the Pauli–Lubanski vector for classical zero rest-mass particles. The helicity operator at null infinity is rooted in the topology and turns out to be essentially the Hodge duality operator(*). The notion of duality appears as a global concept. Under such conditions, self- and anti-self-dual modes of the Weyl curvature could be viewed as states originating in the nontrivial topology. These results depend crucially on the presence of topological charges; it is tempting to speculate that such wormholes might be basic building blocks.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.527148
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 21
    Electronic Resource
    Electronic Resource
    Birkhoff-type theorem in self-creation cosmology (1986)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 27 (1986), S. 1074-1075 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: It is shown that an analog of Birkhoff's theorem of general relativity exists in a self-creation theory of gravitation, proposed by Barber, when the scalar field is independent of time.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.527150
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 22
    Electronic Resource
    Electronic Resource
    Conformally Ricci-flat perfect fluids (1986)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 27 (1986), S. 1076-1081 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: Classes of inhomogeneous perfect fluid solutions can be obtained by requiring that the associated Weyl tensor corresponds to a nonflat vacuum solution of Einstein's field equations. It is shown how one derives from this assumption useful information on the Newman–Penrose variables. Some particular classes of shear-free perfect fluid solutions are discussed, which all turn out to be locally rotationally symmetric.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.527151
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 23
    Electronic Resource
    Electronic Resource
    Global techniques, dual mass, and causality violation (1986)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 27 (1986), S. 1066-1073 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: A mathematical framework is presented for the description of (magnetic) monopoles or their gravitational analogs. Using Penrose's global techniques, a proof of a theorem to the effect that, for vacuum space-times with wormhole and an everywhere timelike and complete Killing vector field, the topology must be that of a principal S1 fiber bundle over S2×R (topology of the manifold of orbits of the stationary Killing vector field) if the dual mass (the gravitational analog of the magnetic monopole) does not vanish, is presented. Hence the presence of this magnetic charge induces a causality violation: it is shown that it measures the number of windings of the space-time bundle around its fiber, or the periodicity of the timelike closed loops. If, in addition, the manifold of orbits of the stationary Killing field is asymptotically flat, or if a rotational Killing field is present, the resulting expressions of the dual mass reinsure the fact that it should be viewed as a monopole source of angular momentum. The NUT solution is presented as an example of space-time exhibiting the above features. The role of dual mass solutions in quantum gravity is considered.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.527149
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 24
    Electronic Resource
    Electronic Resource
    Exact Bogoliubov limits for the Bassichis–Foldy model and continued fractions (1986)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 27 (1986), S. 1093-1098 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: The critical values of coupling for the Bassichis–Foldy model are explained. For a finite number of bosons N they are associated with changes in the bounded above and below properties of the Hamiltonian. Exact N → ∞ spectral properties are obtained using continued fractions and a duality in terms of competing Bogoliubov-type limits is exhibited. The critical coupling limits are then associated with transitions from either a discrete to a continuous spectrum or from one Bogoliubov-type limit to another.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.527153
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 25
    Electronic Resource
    Electronic Resource
    Solution of a generalized Chandrasekhar H-equation (1986)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 27 (1986), S. 1110-1112 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: The Chandrasekhar H-equations are generalized to problems relevant to multigroup transport equations that have nondiagonal cross-section matrices. These equations are shown to have a unique solution in a ball of a Banach space, which satisfies the necessary analyticity properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.527389
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 26
    Electronic Resource
    Electronic Resource
    On the microscopic derivation of the finite-temperature Josephson relation in operator form (1986)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 27 (1986), S. 1082-1092 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: As a microscopic description of the Josephson junction, two BCS models, are studied in the strict pair formulation with quite an arbitrary weak coupling potential. The modular formalism, the separate gauge transformations, and the limiting dynamics are analyzed for the interacting system in terms of the GNS representation of the uncoupled limiting Gibbs state. By means of the Connes theory the condensed Cooper pair and the quasiparticle spectrum is shown to be stable against weak perturbations. The modular formalism is used to construct a local approximation to the renormalized particle number operator and, by this, its time dependence, in spite of this observable not being affiliated with the von Neumann algebra of the temperature representation. The time derivation from this unbounded operator-valued function coincides with the limit of the local currents and splits under a natural assumption into a sum of the Josephson and the quasiparticle current operator extending the two-fluid picture also to the coupled model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.527152
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 27
    Electronic Resource
    Electronic Resource
    Thermodynamics and molecular freedom of dimers on plane triangular lattices (1986)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 27 (1986), S. 1099-1109 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: This is an extension of three previous papers dealing with dimers on rectangular lattices (one, two, and three dimensions). The technique presented in the first paper in this series continues to be fruitful for dimers on plane triangular lattices. Entropy, isothermal compressibility, constant pressure heat capacity, and molecular freedom per dimer at close packing are obtained exactly for lattices infinite in one direction and finite in the other. Observations made in the third paper of the series concerning molecular freedom per dimer at close packing on rectangular lattices are used to extrapolate our results to infinite plane triangular lattices. At close packing, the molecular freedom per dimer on an infinite plane triangular lattice is calculated to be 2.356 527... in agreement with the value obtained by Nagle. Based on our earlier findings, the value of 2.356 527... was used to obtain the analytic fit for the thermodynamic quantities in terms of the normalized number density.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.527154
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 28
    Electronic Resource
    Electronic Resource
    Creating and annihilating Lie–Bäcklund transformations of the Federbush model (1986)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 27 (1986), S. 1139-1144 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: Using software developed for symbolic integration, infinitesimal symmetries, conserved currents, and first- and second-order Lie–Bäcklund transformations for the Federbush model are established. Moreover four (x,t)-dependent Lie–Bäcklund transformations are constructed leading to infinite hierarchies of Lie–Bäcklund transformations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.527157
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 29
    Electronic Resource
    Electronic Resource
    Unbounded representations of symmetry groups in gauge quantum field theory. II. Integration (1986)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 27 (1986), S. 1113-1127 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: Within the gauge quantum field theory of the Wightman–Gårding type, the integration of representations of Lie algebras is investigated. By means of the covariance condition (substitution rules) for the basic fields, it is shown that a form skew-symmetric representation of a Lie algebra can be integrated to a form isometric and in general unbounded representation of the universal covering group of a corresponding Lie group provided the conditions (Nelson, Sternheimer, etc.), which are well known for the case of Hilbert or Banach representations, hold. If a form isometric representation leaves the subspace from which the physical Hilbert space is obtained via factorization and completion invariant, then the same is proved to be true for its differential. Conversely, a necessary and sufficient condition is derived for the transmission of the invariance of this subspace under a form skew-symmetric representation of a Lie algebra to its integral.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.527155
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 30
    Electronic Resource
    Electronic Resource
    Gravitational anomalies in two dimensions: A cohomological approach (1986)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 27 (1986), S. 1128-1138 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: The spectral sequences method is employed to study the cohomology space of the Becchi–Rouet–Stora (BRS) operator, which describes the general coordinate transformations in a two-dimensional polynomial Lagrangian field theory. A pure external gravitational model is considered. In the Fadeev–Popov charge-one sector, two classes of elements are found: the first represents the ordinary trace anomalies, in the second the presence of the anomalies recently calculated by Bardeen and Zumino are pointed out.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.527156
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 31
    Electronic Resource
    Electronic Resource
    Low-temperature deposition of high-quality silicon dioxide by plasma-enhanced chemical vapor deposition (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3136-3145 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of high-quality silicon dioxide have been deposited at low temperatures by plasma-enhanced chemical vapor deposition. A deposition rate much lower than that used in conventional plasma-enhanced processes is found to be crucial in obtaining material with reproducible, good properties. Controlled, slow deposition is achieved by using very low flow rates of reactive gases, together with a much higher flow of inert carrier gas to ensure uniformity. Films deposited at usual high deposition rates (∼500 A(ring)/min) exhibit irreproducible and poor electrical properties and are porous. Those deposited slowly (∼60 A(ring)/min) have very reproducible properties, are relatively dense and exhibit very good electrical integrity. Oxides deposited using a substrate temperature of 350 °C compare favorably with those deposited at 700°C using atmospheric-pressure chemical vapor deposition and can be deposited routinely over a wide range of oxide thickness. Deposition at 275 °C results in similar properties but with increased electron capture associated with deep bulk traps. Thicker layers can be deposited onto polycrystalline metal (sputtered films on glass substrates) without any deterioration in film properties. The as-deposited Si:SiO2 interface state density is quite high (∼1012 eV−1 cm−2), although it is reduced to very respectable levels (in the mid 1010–1011 eV−1 cm−2 range) by conventional postmetallization anneals. The suitability of these low-temperature oxides for thin film transistor applications is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337726
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 32
    Electronic Resource
    Electronic Resource
    Nitridation of Si (100) made by radio frequency plasma as studied by in situ angular resolved x-ray photoelectron spectroscopy (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3162-3166 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray photoelectron spectroscopy with variable takeoff angles has been used to study the nitridation of Si(100). The air-oxidized layer on the silicon film has been cleaned off by an Ar radio frequency (rf) plasma, and nitridation was obtained at temperatures around 400 °C in a rf plasma of a NH3 (5%)-N2(95%) mixture. N(1s) and Si(2p) photoelectrons lines have been analyzed as function of the angle θ between the surface of the sample and the detector slit at each step of nitridation to obtain depth profile. These lines have both been decomposed into two components due, on one hand, to the Si–N and the metallic bonds and, on the other hand, to the chemisorbed nitrogen and the N–Si bond. From the integrated intensities of these lines, concentration dependencies on depth and nitridation time have been studied; a nitridation kinetics has been deduced.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337729
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 33
    Electronic Resource
    Electronic Resource
    Deposition of the unreactive metal Au onto sputtered and cleaved Hg1−xCdxTe surfaces (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3157-3161 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interaction between thin layers of Au and both cleaved and sputtered p-type Hg0.72Cd0.28Te and sputtered p-type Hg0.79Cd0.21Te surfaces has been investigated with ultraviolet photoelectron spectroscopy using synchrotron radiation. Only a small loss of Hg from the interface was observed during Au deposition, in contrast to that seen during Al and In deposition reported elsewhere. The retention of Hg is explained by the lower stability of AuTe2 compared with HgTe, which makes the exchange reaction between Au and Hg unfavorable. Small differences in the Hg/Cd ratio following Au deposition with different surface preparations and material were noted. They were attributed to reduced stability of the ion-bombarded surface caused by sputter-induced defects and reduced strength of the Hg–Te bond, which resulted from the increased local CdTe concentration. Although Au diffused into the semiconductor to partially compensate for the cleavage-induced defects (which act as donors), it was not able to compensate appreciably for the larger number of sputter-induced defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337728
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 34
    Electronic Resource
    Electronic Resource
    Local epitaxy of TiSi2 on (111)Si: Effects due to rapid thermal annealing and to the annealing atmosphere (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3172-3175 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Localized epitaxial TiSi2 was grown on (111)Si by rapid thermal annealing (RTA) in Ar ambient. The best epitaxy was obtained in samples annealed at 1100 °C for 20 s. Almost full coverage of TiSi2 (epitaxial and nonepitaxial) on silicon surface was found. The epitaxial regions, about 20 μm in average size, were observed to cover 70% of the surface area. Some of the epitaxial regions were observed to be as large as 40 μm in size. Dominant mode and average size of TiSi2 epitaxy in RTA samples were found to be different from those in vacuum furnace annealed specimens. Ambient gas induced silicide surface and/or silicide/Si interface energy changes are suggested to promote the growth of differently oriented grains. The main advantages of RTA in inducing TiSi2 epitaxy appear to be better control of the annealing ambient, temperature, and time for short-time anneals in the small RTA apparatus than in a furnace.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337731
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 35
    Electronic Resource
    Electronic Resource
    The localized density of states in amorphous silicon determined by electrophotography (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3176-3181 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The localized density of states g(E) near midgap for undoped, B2H6-doped, and PH3-doped hydrogenated amorphous silicon is evaluated from the electrophotographic (xerographic) method. The density of hole traps decreases with increasing B2H6 concentration and that of electron traps decreases with increasing PH3. These features are qualitatively similar to those deduced from the deep-level transient spectroscopy, the photothermal deflection spectroscopy, the time-of-flight measurements, and the isothermal capacitance transient spectroscopy. The energy positions of neutral dangling bonds D0 and doubly occupied D− are estimated to be 0.85–0.88 eV from the valence band and 0.62–0.67 eV from the conduction band, respectively. Comparison of the energy peaks of electron and hole traps shows that the positive correlation energy of dangling bonds is about 0.3–0.4 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337732
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 36
    Electronic Resource
    Electronic Resource
    "New donors'' in silicon: An interface effect due to internal oxidation (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3192-3195 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The analysis of Czochralski-silicon annealed in the range 500–800 °C is performed using infrared transmission, electron paramagnetic resonance and admittance spectroscopy measurements. It is shown that the experimental data and especially, new original data obtained with the pulsed admittance spectroscopy technique are consistent with a new model. The "new donors'' effect would in fact be the result of the inversion layer around silica precipitates. This model is demonstrated taking in account the known properties of the Si/SiO2 interface (between precipitates and the silicon crystal). The electrical conduction is shown to be a percolation process through an inhomogeneously conducting material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337735
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 37
    Electronic Resource
    Electronic Resource
    Ohmic, superconducting, shallow AuGe/Nb contacts to GaAs (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3204-3210 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An emerging new class of superconductor-semiconductor devices requires Ohmic superconducting contacts which do not diffuse deeply into a semiconductor. We developed a contact to GaAs based on ∼150 A(ring) of AuGe covered with ∼2000 A(ring) of Nb annealed in reducing atmosphere at 390–420 °C for 1–5 s. The resulting contact has linear I-V characteristics at all temperatures down to 4.2 K, resistivity of ∼2×10−6 Ω cm2 (∼0.1 Ω mm), and superconducting transition temperature Tc (approximately-greater-than)8 K. Secondary ion mass spectroscopy (SIMS) and transmission electron microscopy (TEM) studies revealed very shallow penetration of the active dopant Ge into GaAs; the upper limit for the thickness of the doped layer with Ge concentration over 1017 cm−3 is estimated as 200–300 A(ring). Gold, a nonactive dopant (deep level) drops to below 1018 cm−3 within the same distance, with the possible tail extending further. Morphology and uniformity of a contact, as revealed in TEM and optical microscopy, is good, owing to the Nb overlayer which prevents AuGe from "balling up'' upon melting. These contacts can be used in low-temperature devices and conventional devices based on GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337738
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 38
    Electronic Resource
    Electronic Resource
    Optical properties of zinc phosphide (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3282-3288 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical absorption edge of Zn3P2 has been measured by transmittance and photoconductivity at 300 K. The absorption coefficient in both polarizations is shown to follow the expected behavior for indirect gaps at 1.39 and 1.41 eV in parallel and perpendicular configurations. The high-absorption region has been measured in thin single crystals and the absorption coefficient is shown to agree with the optical constants derived from reflectivity for values of the absorption coefficient up to 105 cm−1. The optical properties and the behavior of photoconductivity are discussed in view of possible applications of Zn3P2 to solar energy conversion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337719
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 39
    Electronic Resource
    Electronic Resource
    Hydrogen out-diffusion suppression effect of overlayers in H+2 -implanted magnetic bubble garnet (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3269-3274 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogen out-diffusion suppression effect of overlayer deposited on H+2 -implanted magnetic bubble garnet has been investigated using gas mass spectroscopy and secondary ion mass spectroscopy. It has been found that oxide films such as SiO2, SiO, TiO2, and Al2O3 or nitride film such as Si3N4 effectively suppress out-diffusion of hydrogen during annealing, keeping a large anisotropy field change induced by hydrogen implantation after the annealing. Hydrogen depth profiles have also been found to have a sharp peak at the boundary between overlayer and garnet which can suppress out-diffusion of hydrogen. Metal films such as Au, Mo, and Ni–Fe alloy have been found not to act as suppressors of hydrogen out-diffusion. Annealing hydrogen-implanted garnet with an oxide overlayer on the surface is useful for ion-implanted bubble device fabrication because of thermal stability of large anisotropy change induced by implantation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337717
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 40
    Electronic Resource
    Electronic Resource
    Finite-size effects on Raman scattering from GaAs-AlAs superlattices (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3289-3292 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated finite-size (total number of periods) effects on Raman scattering by longitudinal acoustic (LA) and longitudinal optic (LO) phonon modes in GaAs-AlAs superlattices. Every superlattice has the same period (10-monolayer GaAs and 10-monolayer AlAs), while the total number of periods ranges from 3 to 100 periods. Even in the superlattice with three periods, folded LA phonon modes are induced by the superlattice period. Raman linewidths of folded LA phonon modes increase as the total number of periods decreases. The Raman linewidth broadening becomes remarkable below 20 periods. The dependence of linewidth broadening on the total number of periods results from the relaxation of the Raman selection rule for phonon wave vectors induced by the finiteness of superlattices. On the other hand, for LO phonon modes the finite size does not affect Raman line shapes; this originates in the confinement of LO phonon modes in individual layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337720
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 41
    Electronic Resource
    Electronic Resource
    Variable angle of incidence spectroscopic ellipsometry: Application to GaAs-AlxGa1−xAs multiple heterostructures (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3293-3302 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The sensitivity of spectroscopic ellipsometry data to multilayer model parameters is shown to be a strong function of the angle of incidence. A quantitative study of sensitivity versus angle of incidence is performed for a GaAs-AlxGa1−xAs-GaAs substrate structure, showing that maximum sensitivity to layer thicknesses and AlGaAs composition occurs near the wavelength-dependent principal angle. These results are verified by experimental measurements on two molecular-beam epitaxy grown samples. New spectral features, not found in previous ellipsometry studies of similar structures, are also reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337695
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 42
    Electronic Resource
    Electronic Resource
    Time-resolved Raman scattering measurement of photoexcited plasmon in GaP crystals (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3303-3308 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An overdamped plasmon-LO phonon coupled mode in undoped GaP crystals has been observed under high excitation condition. We have studied the relaxation process of the coupled mode in the time range of nonoseconds using a time-resolved Raman scattering technique at 81 K. The decay time of photocreated free carriers has been estimated from line-shape fitting of the coupled mode in the time-resolved Raman spectra. The decay time obtained from the Raman study has been compared with the value obtained from luminescence measurements. The plasmon hybridized with the LO phonon is found to be a gaslike electron-hole plasma.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337696
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 43
    Electronic Resource
    Electronic Resource
    Effects of rapid thermal processing on thermal oxides of silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3360-3363 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of rapid thermal processing (RTP) on the electrical properties of thin gate oxides in metal-oxide-semiconductor (MOS) devices have been studied. MOS capacitors have been analyzed by current-voltage (I-V) and constant current stress techniques. MOS field-effect transistors (MOSFETs) have been fabricated using RTP for the post-implant anneal, and the transistor degradation due to hot carrier injection has also been investigated. No significant RTP-induced degradation was detected in any category of the device properties considered here. An abnormal trapping behavior was observed on the wafer annealed at high temperature and/or long duration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337704
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 44
    Electronic Resource
    Electronic Resource
    Determination of dynamic release curves of manganin stress gauges from their resistive hysteresis (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3369-3371 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We extend our previous analytical modeling of the dynamic response of shock loaded piezoresistance gauges to the unloading region. We present a new approach in which we use the measured resistive hysteresis of manganin gauges to get their release stress-strain characteristics. This procedure is especially suited for manganin gauges because their resistive response depends only on the stresses and strains which prevail in them. Other gauge materials which are sensitive to the temperature rise and/or shock generated defects would not lend themselves to this direct analysis. We present an example in which we calculate the unloading stress-strain curve for manganin from a shock level of 120 kb down to zero longitudinal stress. Various aspects of this curve are discussed and compared to data obtained by other techniques.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337707
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 45
    Electronic Resource
    Electronic Resource
    Photoluminescence of Si-doped AlAs grown by molecular-beam epitaxy (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3371-3373 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature photoluminescence (PL) spectra for Si-doped AlAs grown by molecular-beam epitaxy is reported for the first time. It is revealed that a sharp emission which is 63 meV below the indirect excitonic band gap Eg,ind(X) is related to the Si-donor level. From the dependence of PL spectra upon Si dosage, it is suggested that a broad emission band which is 135 meV below Eg,ind(X) is due to donor-acceptor (SiAl-SiAs) pair recombinations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337708
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 46
    Electronic Resource
    Electronic Resource
    Zn diffusion in GaAs obtained by a simple open-tube technique (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3379-3380 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zn diffusion into 2-in.-diam semi-insulating GaAs wafers has been carried out by a simple, open-tube diffusion method using a commercially available GaAsZn solid source and without surface coating or encapsulation. High-quality (μ=75–100 cm2/V s) layers with a flat carrier concentration and sharp cutoff Zn distribution have been obtained. The p-type layers obtained by this method are uniform across the wafer, and the technique can be easily scaled up. Selective diffusion of Zn was also demonstrated with this technique, using a plasma-deposited Si3N4 as a diffusion mask.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337711
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 47
    Electronic Resource
    Electronic Resource
    Photochemical vapor deposition of hydrogenated amorphous silicon films from hydrogen diluted monosilane (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3364-3366 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mercury-photosensitized photochemical vapor deposition of hydrogenated amorphous silicon films was carried out for H2-diluted SiH4 source material using 2537-A(ring) light excitation. The deposition rate of the amorphous silicon film increased with increasing H2 volume in the source and exhibited a maximum for a 30% SiH4 source. Substrate temperature dependence in the deposition rate increased for a large amount of H2 in the source as compared with a pure SiH4 source. This result was applied to prevent transparency loss in a quartz window used to introduce the excitation light into the reaction zone.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337705
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 48
    Electronic Resource
    Electronic Resource
    Effects of impurities on radiation damage in InP (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 935-940 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strong impurity effects upon introduction and annealing behavior of radiation-induced defects in InP irradiated with 1-MeV electrons have been found. The main defect center of 0.37-eV hole trap H4 in p-InP, which must be due to a point defect, is annealed even at room temperature. Its annealing rate is found to be proportional to the 2/3 power of the preirradiation carrier concentration in InP. Moreover, the density of the hole trap H5 (Ev+0.52 eV) in p-InP, which must be due to a point defect–impurity complex, increases with increase in the InP carrier concentration. These results suggest that the radiation-induced defects in InP must recover through long-range diffusion mediated by impurity atoms. A model is proposed in which point defects diffuse to sinks through impurities so as to disappear or bind impurities so as to form point defect–impurity complexes. In addition to the long-range diffusion mechanism, the possibility of charge-state effects responsible for the thermal annealing of radiation-induced defects in InP is also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337334
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 49
    Electronic Resource
    Electronic Resource
    Determination of the chain segment lengths involved in γ relaxation of low-density polyethylene by thermostimulated depolarization measurements (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 946-954 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We determined the chain segment lengths involved in the γ process of low-density polyethylene by introducing linear alkanes of different chain lengths into the polymer. These alkanes possess at one end of the chain an electric dipole constituted by an ester group. Their influence on the γ relaxation of low-density polyethylene was observed by thermostimulated depolarization measurements. We found a correlation between the γ temperature peak position and the alkane chain length, while the activation parameters distributions determined by the thermal sampling technique were only slightly modified. This was explained by considering that the distribution in activation parameters is partly induced by a distribution in the chain segment length of the relaxing species. Adding a linear alkane to the polyethylene modifies the population of the mobile chain segments of a given length. We deduced that the γ1 subrelaxation is induced by the motion of chain segments having approximately between 10 and 20 carbon atoms. A compensation law was evidenced in the γ process of all samples studied. The slight modifications of the preexponential factor of relaxation time and the variation of compensation temperature with the alkane chain length are discussed considering a local order in the amorphous phase of low-density polyethylene.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337335
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 50
    Electronic Resource
    Electronic Resource
    Profiling of defects using deep level transient spectroscopy (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 973-979 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep level transient spectroscopy of p–n junctions, Schottky barriers, or metal-oxide-semiconductor (MOS) capacitors is widely used to obtain the concentrations of defects and their profiles in semiconductors. The use of this technique for profiling presents several difficulties, some of which have not been taken into account in the works previously published. The aim of this paper is to describe the exact analysis which should be performed to obtain correct profiles. The analysis is tested on a constant defect profile, induced by electron irradiation in n-GaAs, in order to illustrate the effect of each correction. It is then applied to defect profiling of a silicon MOS capacitor and on the EL2 defect in annealed GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337340
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 51
    Electronic Resource
    Electronic Resource
    Interfacial reactions between Ni films and GaAs (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 991-1001 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The metallurgical examination of solid-state reaction between nickel thin films and single-crystal GaAs substrates and the resultant electrical properties of the contacts are reported. Annealing at 100–300 °C in forming gas led to formation of a metastable hexagonal phase Ni2GaAs which was stabilized due to its epitaxial growth on (001) and (111) GaAs substrates, as follows: (101¯1)Ni2GaAs(parallel)(001)GaAs and (0001)Ni2GaAs(parallel)(111)GaAs. Nickel atoms were found to be the dominant diffusing species during the ternary phase growth. Ni2GaAs is stable on (111)GaAs up to at least 600 °C, compared to 350 °C on (001)GaAs. The larger stability on (111) is explained by the better epitaxial match found in this case. Reaction on (001)GaAs in the temperature range of 350–550 °C resulted in decomposition of Ni2GaAs by NiAs precipitation. After annealing at 600 °C the reacted film was composed of two phases: NiGa and NiAs. The electrical properties of the contacts were correlated to the phase interfacing the substrate. The Ni2GaAs formed rectifying contact with a barrier height of 0.84 eV, whereas when NiGa and NiAs were at the interface an ohmic behavior was observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337343
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 52
    Electronic Resource
    Electronic Resource
    Zinc-oxide thin-film ammonia gas sensors with high sensitivity and excellent selectivity (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 482-484 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A sensor with a high sensitivity and an excellent selectivity for ammonia gas was prepared by using sputtered ZnO thin films. The sensor exhibited an increase of resistance for exposure to ammonia gas whereas it exhibited a decrease of resistance for exposure to many other gases such as inflammable and organic gases. The resistance change and the selectivity of the sensor were enhanced by doping group III metal impurities such as Al, In, and Ga. The lower limit of the detection for ammonia gas was about 1 ppm at a working temperature of 350 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337435
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 53
    Electronic Resource
    Electronic Resource
    Measurements of thermal conductivity of materials using a transient technique. I. Theoretical background (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 485-492 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method of measuring the thermal conductivity of materials during transient heating or cooling is proposed based on the continuous recording of the temperature difference between sample surfaces when known heat flux is supplied to one of the sample surfaces by a heater. The analysis of the solution of the heat conduction equation for a measuring system consisting of two platelike samples separated by a heater shows that the transient heating or cooling significantly influences the temperature distribution within the samples. It follows from the theoretical consideration that this effect as well as the effects resulting from heat generation or absorption in the samples during phase transitions can be eliminated by subtracting the results of two measurements conducted with different powers supplied by the heater. The condition for validity of this procedure is the small temperature difference between sample surfaces which can be achieved by the selection of appropriate temperature change rate or sample thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337436
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 54
    Electronic Resource
    Electronic Resource
    Formation of primary metal particles in evaporation chambers (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 509-513 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental and theoretical studies are reported on formation of primary particles during evaporation of metals into a host gas in an evaporation chamber. The developed theory explains present and previous experimental observations of this process. The dependence of primary particle size on host gas pressure, host-gas molecular weight and source temperature has been explained. Particle thermophoresis has been shown to cause formation of the so-called "smoke shell'' observed surrounding the vapor source. Coalescence of primary particles has been shown not to be an important growth process for the primary particles, although for longer times primary particle coagulation produces the chains of primary particles observed experimentally.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337438
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 55
    Electronic Resource
    Electronic Resource
    Fields from a uniform current source: Instantaneous switch-on (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 514-517 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electromagnetic fields from switching on and off a constant current distributed over a plate of finite extent are studied. Such current distribution will set up a magnetostatic field and an electric dipole field behind the initial transient pulse. Over an area equal to that of the plate, there is a finite volume in which the strengths of the E and H fields of the transient pulse do not decrease with distance. This finite volume decreases as the inverse of the distance from the source so that the energy contained in this volume also decreases as the inverse of the distance traveled.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337439
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 56
    Electronic Resource
    Electronic Resource
    Tunable multiline and single-line operations on a pulsed transversely excited atmospheric pressure CO2 laser by means of an intracavity CO2 gas absorber (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2717-2720 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The operating rotational-vibrational transition lines are observed in a pulsed transversely excited atmospheric pressure CO2 laser with a separated intracavity CO2 gas absorber. The laser operates a dominant 10.6-μm P-20 and P-18 line in a low pressure of CO2 cell and a single-line operation of P-20 line at more high pressure. In a high pressure, the laser does not operate the 10.6-μm P-20 and P-18, but it operates the single-line operation of 10.6-μm R-14, R-18, P-22, and 9.4-μm R-12, and in multiline oscillation, of various combinations of these lines and 10.6-μm R-16, according to the temperature of this gas absorber. The results are attributed to the absorbing mechanism of the CO2 gas.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337101
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 57
    Electronic Resource
    Electronic Resource
    Model of cw argon ion lasers excited by low-energy electron beams (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2739-2753 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model of cw argon ion lasers excited by low-energy (50–200 eV) direct current electron beams at current densities between 1 and 50 A/cm2 has been developed. The electron energy distribution in the electron-beam-created plasma is calculated by numerically solving the Boltzmann equation for electrons. Optical gains, powers, and laser efficiences were computed for the 4765-, 4880-, 4965-, and 4658-A(ring) Ar ii transitions for a wide range of discharge conditions. Laser efficiencies comparable to those of a conventional Ar ii laser (∼3×10−4) are predicted for these laser transitions when electron beam excitation is used.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337105
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 58
    Electronic Resource
    Electronic Resource
    Performance of and excited state densities in a linear thyratron (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2766-2770 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A prototype of a new class of thyratrons having a linear geometry is described and measurements of excited state densities in the thyratron plasma using hook method spectroscopy are presented. The linear thyratron is conceptually scalable to high currents by lengthening it in the axial dimension without changing any other critical scaling dimension (such as the cathode-control grid distance). The prototype linear thyratron is a tetrode having a 3 cm×10 cm slotted dispenser cathode with an effective area of 80 cm2. The thyratron has separately switched 25 kV and 10 kA, with a maximum dI/dt of 1.3×1011 A s−1. Using helium as the working gas, maximum excited state densities of 6×1012 cm−3 were measured for the 23P state.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337108
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 59
    Electronic Resource
    Electronic Resource
    Pyroelectric detection with smectic liquid crystals (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2778-2782 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The potential of ferroelectric liquid crystals for application as pyroelectric infrared detectors is examined. The liquid crystals studied belong to a family of biphenyl and phenylbenzoate esters. It is found that even within this first liquid-crystal family examined, the materials figure of merit compares well with ferroelectric solid materials commonly used for infrared detection and imaging. Because they permit very simple and flexible device design, liquid crystals are attractive candidates for these applications. However, for low-frequency applications, attention must be paid to the reduction of thermal loading by the cell walls.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337111
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 60
    Electronic Resource
    Electronic Resource
    Enhanced electrical conductivity of polydiacetylene crystals by chemical doping and ion implantation (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2788-2796 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The conductivity enhancement in polydiacetylene (PDA) crystals due to chemical doping and ion implantation was measured and analyzed in relation to their spin concentration and photocurrent decay based on the structural and optical information obtained through infrared and visible reflectivity spectra. A conductivity jump was observed upon slight increase of the spin concentration at low doping levels of chemically doped PDAs, suggesting the formation of spinless carriers in chemically doped PDAs, as in trans-polyacetylene and poly(p-phenylene). In contrast, in ion-implanted samples, a great difference in the magnitudes (by more than five orders of magnitude) was observed between the conductivity enhancement for two PDAs having different side chain species. Furthermore, the photocurrent decay time measurements reveal different distributions of implantation-induced trap levels between ion-implanted poly [2,4-hexadiyne-1,6-diol-bis-(p-toluene sulfonate)] (PTS) and poly[2,4-hexadiyne-1,6-di(N-carbazolyl)] (DCH). A conduction mechanism which could explain the significant difference in conductivity enhancement between PTS and DCH is suggested. Because the enhanced conductivity by ion-implanted PTS showed no orientational effect associated with the polymer chain direction, a conductive path and network formation by the implantation-induced defects is more plausible for the conduction mechanism than carrier introduction into the backbone chain band from side chain defect levels.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337059
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 61
    Electronic Resource
    Electronic Resource
    Be-ion implantation in AlxGa1−x As (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2814-2819 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The rapid thermal annealing (RTA) behavior of Be+-ion-implanted AlxGa1−xAs is investigated by means of Hall-effect and photoluminescence (PL) measurements. The electrical activation in GaAs occurs from 400 °C and saturates at about 450 °C, while in AlxGa1−xAs alloys, the activation fractions increase gradually with increase in the annealing temperature. These fractions are evidently smaller in the AlxGa1−xAs alloys than in the GaAs, and larger x alloys give smaller activation fractions at any fixed temperature. PL intensity measurements indicate that annealing at 900 °C results in the maximum optical activation and lattice recovery both for GaAs and AlxGa1−xAs alloys. Secondary ion mass spectrometry (SIMS) analysis reveals Be accumulation at the AlxGa1−xAs (0≤x≤0.3) / SiO2 encapsulant interface caused by Be out-diffusion during RTA. SIMS and differential Hall-effect measurements also suggest significant Be in-diffusion in AlxGa1−xAs alloys especially for larger x values.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337063
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 62
    Electronic Resource
    Electronic Resource
    Tin-doped GaAs epilayers grown by low-pressure metalorganic chemical vapor deposition using triethylgallium and tetraethyltin (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2831-2834 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A vertical cold-wall low-pressure metalorganic chemical vapor deposition system is used for the growth of Sn-doped n-type GaAs epilayers. Smooth and specular Sn-doped GaAs epilayers can be easily grown. Van der Pauw Hall measurement, and I-V and C-V characteristics show that tetraethyltin is a suitable source for GaAs n-type dopant. Sn surface accumulation has been observed from Auger electron specroscopy (AES) and secondary ion mass spectrometry (SIMS) measurements. From infrared spectroscopy (IR) examination of the deposit on the quartz reactor wall, the decomposition of TEG is incomplete. The results of selective epitaxial growth indicate that the GaAs growth from TEG is controlled by surface kinetics. Tetraethyltin can enhance the growth rate of GaAs and decrease the As/Ga ratio and also EL2 concentration. A EL2 model is proposed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337066
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 63
    Electronic Resource
    Electronic Resource
    Identification of intrinsic gettering centers in oxygen-free silicon crystals (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 622-626 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Intrinsic gettering centers in oxygen-free silicon crystals after a high–low–medium-temperature annealing cycle were successfully identified using transmission electron microscopy and energy dispersive x-ray spectroscopy. These centers have a butterfly-type shape and they consist of interstitial-type extended multiple dislocation loops in {110} planes of 0.1–0.7 μm diameter and a high density of small 3–15-nm-diam precipitates located inside the dislocation loops and/or on the dislocation line. Compositional x-ray analysis identified Cu as the predominant metal component of the precipitates. Occasionally Ni and very rarely Fe were also detected.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337458
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 64
    Electronic Resource
    Electronic Resource
    Photoemission spectroscopy study of the Al/SiC interface (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 635-638 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Aluminum layers of some nanometers thickness have been deposited onto α-SiC crystals and studied by x-ray and ultraviolet photoelectron spectroscopies as a function of annealing temperature. Annealing beyond 600 °C induces a complete disappearance of metallic Al on the crystal surface, penetration of Al into the bulk, and formation of aluminum carbide. Ultraviolet photoemission spectra recorded after annealing at 360 °C could be explained by a beginning of interfacial reaction. However, there is no clear experimental evidence that reaction occurs at such a low temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337405
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 65
    Electronic Resource
    Electronic Resource
    Deep levels in as-grown and Si-implanted In0.2Ga0.8As–GaAs strained-layer superlattice optical guiding structures (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 639-642 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Trap levels in ∼2-μm In0.2Ga0.8As (94 A(ring))/GaAs(25 A(ring)) strained-layer superlattices, suitable for optical waveguides, have been identified and characterized by deep-level transient spectroscopy and optical deep-level transient spectroscopy measurements. Several dominant electron and hole traps with concentrations ∼1014 cm−3, and thermal ionization energies ΔET varying from 0.20 to 0.75 eV have been detected. Except a 0.20-eV electron trap, which might be present in the In0.2Ga0.8As well regions, all the other traps have characteristics similar to those identified in molecular-beam epitaxial GaAs. Of these, a 0.42-eV hole trap is believed to originate from Cu impurities and the others are probably related to native defects. Upon Si implantation and halogen lamp annealing, new deep centers are created. These are electron traps with ΔET=0.81 eV and hole traps with ΔET=0.46 eV. Traps occurring at room temperature may present limitations for optical devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337406
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 66
    Electronic Resource
    Electronic Resource
    The hot-electron problem in small semiconductor devices (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 650-656 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Decreasing device dimensions will cause an increasing internal field strength in a semiconductor device. The average carrier energy is different from the thermal equilibrium value 3/2 kT. Modification of current transport is considered on different levels of approximation. In a local approximation we derive a field-dependent carrier mobility and temperature from a more general self-consistent formulation. Numerical estimation of hot-electron effects are given for a realistic n-channel metal-oxide-semiconductor field-effect transistor of various channel lengths. It is shown that both high-field and field-gradient effects will contribute.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337408
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 67
    Electronic Resource
    Electronic Resource
    Effect of the statistical shift on the anomalous conductivities of n-type hydrogenated amorphous silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 673-676 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We calculated the shift of Fermi energy EF with temperature, using a model density of states for hydrogenated amorphous silicon (a-Si:H) similar to that of deep level transient spectroscopy results, by a numerical method. The conductivity σ was calculated from the calculated EF as a function of temperature. It was found that some features of anomalous transport phenomena of n-type a-Si:H such as kinks or the continuous bending of log σ vs 1/T curves and the Meyer–Neldel-type preexponential factors can be explained, at least in part, by the statistical shift alone.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337412
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 68
    Electronic Resource
    Electronic Resource
    A modified nucleation and growth model for ferroelectric switching in Form I poly(vinylidene fluoride) (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2920-2923 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The analytical description of transient switching characteristics in Form I poly(vinylidene fluoride) has previously been confined to the narrow time range where the switching current displays a modest peak under an applied dc field. We show here that this range can be broadened to include the entire switching process by considering the process to be composed of two successive events, the first involving only the nucleation of microdomains and the second entailing the random nucleation and two-dimensional growth. The model has been successfully applied to data obtained at temperatures between 20 and −80 °C from a sample that had been either unirradiated or irradiated with γ rays (10 Mrad). Furthermore, our analysis revealed that the irradiation, which enhances the retention characteristics of piezoelectric property at elevated temperatures, primarily affects the main switching process by suppressing the rate of nucleation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337079
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 69
    Electronic Resource
    Electronic Resource
    The structural and compositional characterization of InSb films prepared by metalorganic magnetron sputtering (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2949-2953 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metalorganic magnetron sputtering has been used to deposit polycrystalline and homoepitaxial films of indium antimonide. In this technique a metal antimony target is magnetron sputtered in a reactive vapor of trimethylindium (TMI). Stoichiometric layers of indium antimonide could be deposited for all growth temperatures studied (20–370 °C). However, below 250 °C the films were either amorphous or composed of very small crystallites. Above 290 °C the layers were epitaxial as determined from the electron channeling patterns observed. For these layers the growth rate was controlled by the TMI flow with the excess antimony flux acting to stabilize the surface. The surface morphology was excellent with "mirrorlike'' surfaces except at high TMI flows where indium surface droplets were formed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337084
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 70
    Electronic Resource
    Electronic Resource
    High-resolution imaging of the EL2 distribution in thin semi-insulating GaAs wafers: A comparison with x-ray topography (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2954-2958 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed comparison of two-dimensional near-infrared absorption maps and x-ray topographs of commercial semi-insulating (100) GaAs wafers grown by the liquid-encapsulated Czochralski technique is reported. The absorption measurements with a spatial resolution up to 100×100 μm2 were performed using a highly sensitive silicon diode array as the detector element. Fluctuations of the EL2 concentration up to 60% are found in conventional undoped wafers. In preannealed wafers, these fluctuations are reduced by a factor of 2, approximately. The spatial one-to-one correlation of the EL2 distribution with grown-in dislocation networks, which is observed in both cases, is discussed. In indium-doped wafers of low dislocation density, the homogeneity of EL2 is better than 5% in the central area of about 40 mm in diameter. By investigating the EL2 distribution near peripheral slip lines, it is definitely established that gettering is a relevant process leading to nonuniformities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337768
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 71
    Electronic Resource
    Electronic Resource
    Application of the Bergman–Milton theory of bounds to the permittivity of rocks (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2966-2976 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The permittivity of brine-saturated porous rocks below 2 GHz varies with frequency in a way that is linked closely to the pore geometry. The theories of bounds of the permittivity by Bergman and by Milton, based on Bergman's work on two-component composites, impose restrictions on this frequency dependence. We give a detailed and systematic analysis of these restrictions for this special case. We show to what extent the conductivity at low frequencies, combined with a measured value of the permittivity at an intermediate frequency, restricts the permittivity at all other frequencies. We establish a scaling law, according to which the permittivity depends on the brine conductivity σ2 and the frequency ω, only through the ratio σ2/ω, to a good approximation. We apply the analysis to data on sandstones by Poley, Nooteboom, and de Waal. As a further application of this theory, we derive bounds for the electrical or thermal conductivity of a two-component composite using the values that this same property would have if either of the components were an insulator.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337770
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 72
    Electronic Resource
    Electronic Resource
    More on focus wave modes in Maxwell equations (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2981-2982 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: New solitary electromagnetic wave solutions of Maxwell's equations are obtained. Brittingham [J. Appl. Phys. 54, 1179 (1983)] calls them focus wave modes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337773
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 73
    Electronic Resource
    Electronic Resource
    Pulsed laser-induced changes in structural and electrical properties of Pb0.8Sn0.2Te thin films (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2994-2996 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pb0.8Sn0.2Te films, grown by flash evaporation, were irradiated with Nd:YAG laser pulses of various energy densities. Transmission electron microscopy, x-ray diffraction, and electrical studies reveal that the irradiation significantly increases grain size, and the mobility increases by a factor of 5.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337753
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 74
    Electronic Resource
    Electronic Resource
    Space-charge-limited current flow in a spherical double sheath (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2280-2284 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Solutions to the problem of counterflowing, space-charge-limited, negatively and positively charged particle currents between two spherical surfaces are presented. They show that the current magnitudes exhibit the usual 3/2 power dependence on driving potential difference and square root dependence on particle charge-to-mass ratio. The magnitude of either current is strongly dependent on the radius ratio of the two spherical surfaces. The relative magnitudes of the two counterflowing currents are related by the square root of the mass ratio of the two charged particle species and a radius ratio factor that lies in the range ∼0.1–1.0.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337189
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 75
    Electronic Resource
    Electronic Resource
    Quality factor of the piezoelectric thin film on semiconductor composite resonator resulting from radiation into the semiconductor wafer (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2238-2249 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The composite resonator consists of a uniform thin layer etched in a small well-defined region of a semiconductor wafer to form a diaphragm, upon which is deposited a thin piezoelectric film along with the electrodes to form a resonant region directly on the wafer. Although the composite resonator, which operates in an essentially thickness-extensional mode, can be constructed to employ energy trapping, almost all existing experimental work in the literature is for the case when trapping is not present. All previous analytical work expressly ignores radiation into the bulk semiconductor except one treatment, which unrealistically ignores the junction between the etched diaphragm and the bulk semiconductor. In this work an analysis of the composite resonator driven into essentially thickness-extensional vibrations by the application of a voltage to strip electrodes is performed. The analysis includes all radiating plate waves in the thick portion of the semiconductor. The solution consists of a sum of terms satisfying all differential equations and boundary conditions on major surfaces exactly and uses the appropriate variational principle of linear piezoelectricity to satisfy the remaining conditions approximately. For the case of the aluminum–nitride film on gallium arsenide the Q is calculated for both the configuration in which the film ends at the edges of the electrodes and in which it continues to the edges of the etched diaphragm when trapping is not present and for the latter configuration when trapping is present. The calculations show that when trapping is not present the Q is a very rapidly varying function of the ratio of the composite resonator thickness to the wafer thickness and that the range of variation is very large, i.e., between one and two orders of magnitude. The calculations also reveal that when trapping is present the Q is always much larger and its range of variation much smaller than when trapping is not present.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337183
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 76
    Electronic Resource
    Electronic Resource
    Modeling nonlocal heat flow in laser-produced plasmas (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2296-2300 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonlocal heat transport is investigated under conditions relevant to laser-driven fusion. Results from the nonlocal transport model of Luciani and Mora are compared with results from Fokker–Planck codes and from local flux-limited diffusion simulations. No significant nonlocal effects are found in hydrodynamic simulations for irradiation with either 1.06 or 0.35 μm laser light. Over a large range of conditions, the transport is well modeled with a harmonic averaged flux-limiter between 0.1 and 0.2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337191
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 77
    Electronic Resource
    Electronic Resource
    Kinetics of damage production in silicon during self-implantation (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2310-2315 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the damage which results from silicon self-implantation for the range of doses from 2×1014 to 1×1016 cm−2 for temperatures from 82 to 296 K for 150- and 300-keV implants. Cross-sectional transmission electron microscopy (TEM) was used to evaluate the nature of the damaged layer. The experimental results were correlated with computer calculated damage distributions using a Monte Carlo simulation program. The depth of the amorphous-crystalline interface(s) was evaluated as a function of dose and temperature. An experimental deposited-damage energy curve for individual cascade was constructed. Using the curve a critical energy density for amorphization Ec, was calculated for the samples implanted at different temperatures. The energy was found to depend on depth and implant energy, and it increases with temperature. A study of amorphous-crystalline interface morphology shows no dependence on temperature within the range considered. The kinetics of dynamic annealing are discussed in conjunction with the above findings.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337140
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 78
    Electronic Resource
    Electronic Resource
    Modeling of titanium diffusion into LiNbO3 using a depth-dependent diffusion coefficient (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2343-2350 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A theoretical description of the diffusion of a thin film of titanium (Ti) into a lithium niobate (LiNbO3) crystal is reported. A variable depth diffusion coefficient is used to explain the prominent lateral surface diffusion generally observed in the fabrication of Ti-diffused optical waveguides on non-Z-cut LiNbO3. A finite integral transform technique is used to solve the diffusion equation described by Fick's law. Since the enhanced lateral diffusion is usually ascribed to anisotropic diffusion, we compare our calculations with those obtained using different diffusion coefficients for each diffusion direction. The approach with a variable depth diffusion coefficient can explain the enhancement of lateral diffusion and the peak of Ti concentration close to the surface observed experimentally.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337782
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 79
    Electronic Resource
    Electronic Resource
    Structural and optical properties of CoxIn2S3+x thin films grown by spray pyrolysis method (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2357-2360 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CoxIn2S3+x thin films with various relative compositions were grown on thoroughly cleaned glass plates by the spray pyrolysis method. The substrate temperature during growth was maintained at 270 °C and the film then annealed in a vacuum chamber at 2×10−5 Torr at 500 °C for 30 min. The grown CoxIn2S3+x thin films, which had a composition of x=0.0–0.6, showed the tetragonal structure of In2S3, but above x=0.6 the films were amorphous. The energy gap for these films decreased with increasing x composition, and the impurity absorption spectra in near infrared region, ascribed to Co2+ ions, were observed at 13 333, 5970, and 4166 cm−1, which are the 4A2(F)−4T1(P), 4A2(F)−4T1(F), and 4A2(F)−4T2(F) transitions, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337145
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 80
    Electronic Resource
    Electronic Resource
    Optical characterization of pseudomorphic InxGa1−xAs–GaAs single-quantum-well heterostructures (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2361-2367 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strain and quantum-size effects in pseudomorphic InxGa1−xAs–GaAs single-quantum-well heterostructures (SQWHs) are examined using low-temperature photoluminescence techniques. Strain effects in InxGa1−xAs epitaxial layers are first described, then photoluminescence data for a series of MBE-grown pseudomorphic SQWHs are presented and discussed. Each SQWH consists of an unintentionally doped, highly strained (ε∼2%) In0.28Ga0.72As quantum well sandwiched between GaAs confining layers. The structures were grown consecutively under identical conditions, with quantum-well thicknesses ranging from 17 to 430 A(ring). The thinner quantum-well structures exhibit luminescence characteristics indicative of high-quality material (photoluminescence half width ∼6 meV for Lz ∼17 A(ring)), whereas significant broadening and eventual quenching of the photoluminescence peak is observed as alloy layer thicknesses approach and exceed the critical value. Quantum-well luminescence from the thinner (Lz ≤38 A(ring)) SQWHs is dominated by a single, sharp feature which we attribute to n=1 electron-to-heavy hole confined-carrier transitions. An additional shallow (∼20 meV) feature, perhaps impurity related, is present in the photoluminescence spectra of some of the thicker quantum wells, and peak emission intensities are examined as a function of excitation intensity for the various transitions. Finally, the observed dependence of the transition energies upon quantum-well thickness is compared to predictions from an effective-mass SQWH model which incorporates strain effects. Reasonable agreement is obtained for SQWHs with Lz ≤100 A(ring), the expected critical layer thickness for these samples. This work represents the first optical study of pseudomorphic single wells, and our results should be useful in the design of strained-layer quantum-well lasers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337146
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 81
    Electronic Resource
    Electronic Resource
    Minority-carrier lifetime in doped and undoped n-type CdxHg1−xTe (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2377-2385 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of minority-carrier lifetime have been carried out on slices of n-type CdxHg1−xTe (0.2〈x〈0.3) prepared by both normal Bridgman and accelerated crucible rotation (ACRT) Bridgman techniques. Some of these crystals were deliberately doped with a high level of a single impurity. A study of aging effects has been concluded. Lifetime variations with temperature are explained using a combination of band-to-band and Shockley–Read recombination processes. Frequently, a single level 10–30 meV below the conduction-band edge was assumed, but for ACRT crystals it was necessary to postulate a second level. Attempts to identify the origin of the centers, by measurements on doped crystals, were only successful in the case of iron since it acts as a recombination center without providing conduction electrons in CdxHg1−xTe.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337149
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 82
    Electronic Resource
    Electronic Resource
    Selective self-optical compensation effect for a newly discovered acceptor-associated emission in Zn+ ion-implanted GaAs (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2502-2504 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence measurements were carried out at 2 K for Zn+ ion-implanted GaAs, where the concentration of Zn was widely varied from 3×1016 to 1×1021 cm−3. Two Zn+-associated emissions were formed. One emission is at 1.512 eV, g, and the other emission [g-g] is just below g and this moves towards the lower energy level with increasing Zn concentration, [Zn]. The intensity of [g-g] was enhanced with increasing [Zn], up to [Zn]=3×1017 cm−3, and was gradually suppressed for [Zn] beyond that concentration. This selective self-optical compensation effect (SSOC) for [g-g] was found to occur for moderately heavy ion acceptor species such as Zn and Cd, although [g-g] is a common emission among many other acceptor impurities. In addition two new emissions were observed between g and [g-g] at certain [Zn]. Preliminary theoretical explanations are presented for this SSOC effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337165
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 83
    Electronic Resource
    Electronic Resource
    Acoustic properties of proton-exchanged LiNbO3 studied using the acoustic microscopy V(z) technique (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2517-2522 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report measurements of proton-exchanged LiNbO3 using acoustic microscopy in the V(z) mode, together with optical waveguide mode observations. In the present case, samples were prepared using dilute benzoic acid containing a small mole percent of lithium benzoate. Substantial changes in surface acoustic wave (SAW) propagation velocity due to proton exchange have been observed on all three major-axis crystal cuts, with both increase and decrease in velocity occurring, depending on propagation direction. Changes in attenuation are also observed. Using the V(z) technique with a line-focus cylindrical lens has enabled complete velocity surfaces for proton-exchanged lithium niobate to be obtained with reasonable precision, based on simplified isotropic calculations of acoustic propagation in layered media and the assumption that the proton-exchange region is uniform with a depth obtainable from optical waveguide mode calculations. It is concluded that the V(z) acoustic microscopy technique can provide a powerful tool in the study of the SAW properties of proton-exchanged LiNbO3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337114
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 84
    Electronic Resource
    Electronic Resource
    Plasma-enhanced growth and composition of silicon oxynitride films (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2536-2542 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon oxynitride films with varying oxygen/nitrogen ratio were grown from SiH4, N2O, and NH3 by means of a plasma-enchanced chemical vapor deposition process. The elemental composition of the deposited films was measured by a variety of high-energy ion beam techniques. To determine the chemical structure we used Fourier transform infrared absorption spectroscopy and electron-spin resonance. Ellipsometric data and values for mechanical stress are also reported. We show that the entire range of compositions from silicon oxide to silicon nitride can be covered by applying two different processes and by adjusting the N2O/NH3 gas flow ratio of the respective processes. It is suggested that the N2O/SiH4 gas flow ratio is the major deposition characterization parameter, which also controls the chemical structure as far as the hydrogen bonding configuration is concerned. We found that the films contain significant amounts of excess silicon and that the mechanical stress in the oxynitrides is lower than in plasma nitride. The electron-spin density is low (∼1017/cm3) in all samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337117
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 85
    Electronic Resource
    Electronic Resource
    Thermal and photochemical promotion of silicon and silicon dioxide etching by carbonyl difluoride (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2553-2557 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon (111) surfaces that were cleaned and characterized in ultrahigh vacuum were exposed to carbonyl difluoride. After adsorption of COF2, the silicon crystal was heated to 625 °C resulting in a surface etching reaction as evidenced by the desorption of silicon tetrafluoride. Si(111) surfaces covered with a native oxide layer were also exposed to carbonyl difluoride. Dissociation of COF2, using high fluences from the CO2 laser, caused etching of the SiO2 surface. Volatile SiF4(g) was detected by transmission Fourier transform infrared spectroscopy. Two mechanisms, for the thermally enhanced etching of silicon by COF2 and the photochemically promoted etching of silicon dioxide by COF2, are proposed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337120
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 86
    Electronic Resource
    Electronic Resource
    Comparative oxidation studies of SiC(0001¯) and SiC(0001) surfaces (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2558-2563 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comparison of the kinetics of oxidation at 995 and 1345 K of the SiC(0001¯) and SiC(0001) crystal faces is made. The oxidation rate on the SiC(0001¯) (C-rich face) is higher at both temperatures. SiO2 is formed. At 1345 K, the initial oxidation process is retarded by excess surface carbon. When the excess carbon is volatilized by either CO or CO2 formation, the oxidation rate is higher at 1345 K than at 995 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337121
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 87
    Electronic Resource
    Electronic Resource
    Electric and magnetic flux compression theory for arbitrary large liner velocities (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2583-2588 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Theoretical analyses of the compression of axial (i) magnetic and (ii) electric fluxes by means of cylindrical liners are presented for arbitrary large implosion velocities v〈c0. For comparison, quasistatic theories of (i) magnetic and (ii) electric flux compression are given, which are good approximations for nonrelativistic liner speeds v(very-much-less-than)c0. For relativistic liner velocities, significant amounts of electromagnetic radiation would be generated in magnetic or electric flux compression. Relativistic liners can eventually be realized by means of relativistic pulses of electrons of high density. During magnetic flux compression, electrical breakdown is prevented through magnetic self-insulation. The experimental field strengths achievable through electric flux compression are limited by electrical breakdown, since the condition for magnetic self-insulation is not satisfied.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337125
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 88
    Electronic Resource
    Electronic Resource
    Characterization of the heavily doped emitter and junction regions of silicon solar cells using an electron beam (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2589-2595 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electron-beam-induced-current (EBIC) technique is applied to the investigation of heavily doped emitter and junction regions of silicon solar cells via the beam specimen configuration in which the junction is parallel to the surface and the beam is perpendicular to it. It is demonstrated that this technique is very well suited to the investigation of the emitter and junction regions. Even though the experimental EBIC data are collected under three-dimensional conditions, it is shown analytically with the help of two numerical examples that the solutions obtained with one-dimensional numerical modeling are adequate. EBIC data for bare and oxide-covered emitter surfaces are measured and compared with theory. Good agreement is obtained when a cell quality factor of 0.89 is assumed, thus suggesting that ∼11% of the collected carriers recombined in the cell depletion region. This result is similar to Possin's finding that there was evidence for ∼10% of recombination in the junctions of some of his silicon diodes with very shallow junctions [J. Appl. Phys. 50, 4033 (1979)]. It appears that further improvement of the solar cell conversion efficiency is possible if we can consistently make cells with an unity cell quality factor. The improvement in collection efficiency when an emitter surface is covered with an ∼100-A SiO2 film varies with beam energy. For a cell with a junction depth of 0.35 μm the improvement is ∼54% at 2 keV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337126
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 89
    Electronic Resource
    Electronic Resource
    High-speed InP/Ga0.47In0.53As superlattice avalanche photodiodes with very low background doping grown by continuous trichloride vapor-phase epitaxy (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2609-2612 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Trichloride vapor-phase epitaxy has been employed in a single chamber reactor to achieve the continuous (noninterrupted) growth of n−InP/n−In0.53Ga0.47As/InP superlattice structures for avalanche photodetector applications. Very low background doping has been achieved in both the InP (n≈1×1014 cm−3) and the superlattice layers (n=1×1015 cm−3). We report the details of the epitaxial crystal growth as well as analysis of the structures by secondary ion mass spectrometry and transmission electron microscopy. Avalanche photodiodes have been fabricated by Zn diffusion in the InP layer and mesa etching. The devices exhibit an intrinsic response time (full width at half maximum) of 66 ps at λ=1.5 μm which is the shortest so far achieved in superlattice photodetectors. Dark currents of 50 nA at unity gain, multiplication factors of 6, and breakdown voltages exceeding −120 V have been measured.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337129
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 90
    Electronic Resource
    Electronic Resource
    Correlation between the cohesive energy and the onset of radiation-enhanced diffusion in ion mixing (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2615-2617 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A correlation between the cohesive energy of elemental solids and the characteristic temperature Tc for the onset of radiation-enhanced diffusion during ion mixing is established. This correlation enables one to predict the onset of radiation-enhanced diffusion for systems which have not yet been investigated. A theoretical argument based on the current models of cascade mixing and radiation-enhanced diffusion is provided as a basis for understanding this observation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337131
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 91
    Electronic Resource
    Electronic Resource
    Photoacoustic study of surface and bulk nonradiative recombinations in GaAs with two-wavelength excitations (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2621-2623 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new photoacoustic method for distinguishing the surface nonradiative recombinations from the bulk ones in GaAs is presented. The method is based on the noncontact photoacoustic spectroscopy with a Michelson interferometry. It is shown that the surface contributions in a Cr-doped GaAs are relatively large even with the below-gap excitations. The bulk property is shown to be observed with the simultaneous continuous light irradiation with the photon energy above the energy gap.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337133
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 92
    Electronic Resource
    Electronic Resource
    Flat response detectors for the vacuum ultraviolet and soft x-ray region: InP:Fe photoconductors (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2596-2599 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have demonstrated that InP:Fe photoconductive detectors are sensitive to radiation between 20 and 3000 eV. Within experimental error the measured response is flat in this energy range, in agreement with theory. This property, coupled with the simplicity and high speed (full width at one half maximum of less than 200 ps) of these devices, makes them very interesting for the measurement of pulsed vacuum ultraviolet and x-ray radiation and the total instantaneous integrated radiative power emitted from a pulsed source. Low fidelity response can occur in these devices for excitation times that are many times longer than the primary response time of the detector.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337127
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 93
    Electronic Resource
    Electronic Resource
    Electrical stress and inception voltage of discharges in gaseous cavities in an anisotropic dielectric material (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2600-2608 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electric field stress and the inception voltage of discharges in a gaseous void present in an anisotropic dielectric material is developed from the solution of the Laplace equation. The relevant equations for the determination of the electric field and the inception voltage of discharges in voids are presented in a format that can be readily used. The electric field distribution within the void and the maximum field value are determined for two shapes of voids, rectangular and cylindrical cross sections, over wide ranges of anisotropy and sizes of voids. It has been found that the maximum electric field in the void increases with increasing width and decreases with increasing thickness of the void. The inception voltage of discharges is determined over a wide range of void dimensions. The minimum breakdown voltage of a slab of anisotropic dielectric material containing a void follows a U-shaped curve when plotted against the product of the length and width of the void.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337128
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 94
    Electronic Resource
    Electronic Resource
    Near- and far-field observations of transient behavior in pulsed graded barrier quantum well lasers (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2613-2615 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The pulsed behavior of both gain-guided and index-guided graded barrier quantum well lasers has been studied with near- and far-field lateral mode measurements at different pulse widths. Above threshold, gain-guided devices show a transition to predominantly index-guided operation as a result of thermally induced waveguiding. Similar devices with built-in real index guiding exhibit low threshold, stable mode operation, with no observable variations with pulse width.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337130
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 95
    Electronic Resource
    Electronic Resource
    Optimization and insight by geometric programming (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1860-1864 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The main ideas of geometric programming are introduced via elementary examples drawn from engineering design, operations research, chemical equilibrium, entropy maximization, and statistical inference.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337233
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 96
    Electronic Resource
    Electronic Resource
    The temperature dependence of the refractive index of silicon at elevated temperatures at several laser wavelengths (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 841-843 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The refractive index of silicon has been measured at elevated temperatures at several different laser wavelengths of the HeNe and the Ar+ cw lasers. This data, along with the reinterpretation of polarization modulation ellipsometry data, shows that the refractive index is linear with temperature (from 25 to ∼750 °C) and that the temperature coefficient of the refractive index increases as the wavelength of light decreases.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337386
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 97
    Electronic Resource
    Electronic Resource
    Quenching of NF singlet states in a hybrid chemical-laser system (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 4051-4058 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quenching of NF (a1Δ) and NF (b1Σ) was studied in a subscale upconversion gain medium that was based on energy transfer from NF (b1Σ) to IF. Quenching of NF (b1Σ) by IF was found to occur at gas-kinetic rates that were large compared to the energy-transfer rate, indicating low efficiency for the laser. Significant quenching of NF (a1Δ) by IF was also found to occur at a slower rate than was evident for the NF (b1Σ) state.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337535
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 98
    Electronic Resource
    Electronic Resource
    The logarithmic response of palladium-gate metal-insulator-silicon field-effect transistors to hydrogen (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 843-845 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The response characteristics of palladium-gate metal-insulator-silicon field-effect transistor (MISFET) structures to hydrogen are shown to be logarithmically related to the partial pressure of the gas. It is proposed that these palladium-gate MIS structures should be considered as electrochemical devices where the metal/insulator structure behaves as a gas electrode. The results presented were obtained for hydrogen in air and therefore relate directly to the use of these devices as sensors for use in the ambient environment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337387
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 99
    Electronic Resource
    Electronic Resource
    Direct measurement of the energy spectrum of an intense proton beam (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 4059-4063 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A time-resolved magnetic spectrograph was used to measure the energy spectrum of an intense (0.7 TW/cm2) proton beam. A thin gold foil placed at the focus of an ion-diode Rutherford-scattered protons by 90° into the spectrograph, reducing the beam intensity to a level suitable for magnetic analysis. The scattered protons were collimated and then deflected in a samarium-cobalt permanent magnet. The deflected protons were recorded simultaneously on CR-39 and eight p-i-n diodes. A Monte Carlo computer code was used to calculate the sensitivity and resolution of the spectrograph. Data taken on the Proto I accelerator shows a 150–250-keV-wide proton-energy spectrum at each instant in time.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337536
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 100
    Electronic Resource
    Electronic Resource
    Comparisons of the different configurations of the second-order reflection grating (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 4064-4076 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Three canonical equations governing the characteristics of the second-order reflection grating for the transverse magnetic mode are derived. Based on the solution of the canonical equations, the input coupling efficiency for the Gaussian beam is deduced. The characteristics of the four different operating schemes of the reflection grating are compared with reference to such applications as the frequency selective filter, the output coupler, and the input coupler.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337537
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...