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  • 1
    Electronic Resource
    Electronic Resource
    Parametric dependence of the properties of pulsed-laser-deposited diamond-like carbon films (1996)
    Springer
    Applied physics 63 (1996), S. 287-292 
    Details
    ISSN: 1432-0630
    Keywords: 68.60 ; 81.15 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The properties of Pulsed-Laser-Deposited Diamond-Like Carbon (PLD DLC) films are studied as functions of the power densityΦ and the wavelengthλ of the laser beam, and the incident angleϑ of the beam relative to the normal of the target surface. All the films have a similar structure consisting of graphite particulates embedded in a continuous matrix, so the macroscopic performance of the films is determined by the overall contributions of the particulates and the matrix. The use of higherΦ, shorterλ, or largerϑ leads to an enhancement of the diamond-like characteristics and a simultaneous increase of the particulate density. These two effects give opposite contributions to the electrical conductivityσ R, leading to the following results. (i) σR drops with increasingΦ in the lowΦ range (region I) due to the stronger diamond-like nature of the matrix, but increases sharply afterΦ has exceeded a thresholdΦ min as a result of the rapid increase in particulate density. (ii) In region I, the use of shorterλ or largerϑ leads to a more diamond-like matrix, and this overwhelms the degradation effect caused by the slight increase in particulate density. The samples thus become more insulating. In the highΦ region (region II), however, the use of shorterλ or largerϑ gives rise to higher particulate density, thereby increasing the electrical conductivity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01567883
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  • 2
    Electronic Resource
    Electronic Resource
    WxN1−x alloys as diffusion barriers between Al and Si (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2787-2789 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reactively sputtered tungsten nitride (WxN1−x) layers are investigated as diffusion barriers between Al overlayers and Si shallow n+ -p junctions. Both amorphous W80 N20 and polycrystalline W60 N40 films were found to be very effective in preserving the integrity of the n+ -p diodes for 30-min vacuum annealing up to 575 °C. Diode failure at higher temperatures is caused by localized penetration of Al into 〈Si〉 through the WxN1−x barriers. The effectiveness of the barrier decreases for polycrystalline W90 N10 and is worse for pure W.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341579
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  • 3
    Electronic Resource
    Electronic Resource
    Kinetics of NiAl3 growth induced by steady-state thermal annealing at the Ni-〈Al〉 interface (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1821-1825 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Substrates of large grained aluminum crystals were prepared by the strain annealing technique, and Ni films were vacuum evaporated on these substrates after an in situ sputter cleaning process. Upon thermal annealing of samples in vacuum, a laterally uniform growth of NiAl3 is observed, starting from 330 °C, without any indication of boundary diffusion effects. The aluminide phase grows as (duration)1/2 after an initial incubation period with an activation energy of 1.4 eV, i.e., K=x2/t=0.387 (cm2/s)exp(−1.4 eV/kT) for 600 K〈T〈650 K. Impurities, either at the interface or inside the Ni film, retard this reaction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339563
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  • 4
    Electronic Resource
    Electronic Resource
    Correlation between the cohesive energy and the onset of radiation-enhanced diffusion in ion mixing (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2615-2617 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A correlation between the cohesive energy of elemental solids and the characteristic temperature Tc for the onset of radiation-enhanced diffusion during ion mixing is established. This correlation enables one to predict the onset of radiation-enhanced diffusion for systems which have not yet been investigated. A theoretical argument based on the current models of cascade mixing and radiation-enhanced diffusion is provided as a basis for understanding this observation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337131
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  • 5
    Electronic Resource
    Electronic Resource
    Transition-metal silicides formed by ion mixing and by thermal annealing: Which species moves? (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3087-3093 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The moving species during the formation of Pt2Si, Ni2Si, and CrSi2 by both ion mixing with 300–600 keV Xe ions and thermal annealing is identified with inert markers using backscattering spectrometry. Samples of metal-on-silicon and silicon-on-metal have been used, evaporated on SiO2 substrates with two very thin markers (Mo for Pt2Si, W for Ni2Si and CrSi2) placed at the metal–silicon interface, and at the bottom interface with the SiO2 substrate. Monitoring the separation of the two markers as a function of the amount of silicide formed determines the ratio of atomic transport through the growing silicide layer. The results establish that the dominant moving species in both silicide formation processes is the same for the refractory metal-silicide CrSi2, e.g., Si, whereas different atomic transport ratios are found in the case of the near-noble metal silicides Pt2Si and Ni2Si. This outcome is discussed in terms of high-temperature effects during thermal formation of transition-metal silicides.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335809
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  • 6
    Electronic Resource
    Electronic Resource
    TiAl3 formation by furnace annealing of Ti/Al bilayers and the effect of impurities (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2800-2807 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reactions of Ti/Al couples induced by furnace annealing were investigated (at elevated temperature) using large-grained Al substrates and vacuum-evaporated bilayers of both sequences. 4 He MeV backscattering spectrometry was principally used to monitor the reactions. Profiles of oxygen impurity were obtained by elastic 16 O(α,α)16 O resonant scattering. In the range of 460–515 °C, TiAl3 forms as a laterally uniform layer at the Ti/Al interface. The thickness of this compound layer increases as (annealing time)1/2. The activation energy is 1.9–2.0±0.1 eV. For evaporated bilayers on an oxidized Si substrate, the sequence of the bilayers does not effect the growth mechanism of TiAl3 , but the growth rate of samples with the Ti on top is lower than that of samples with Al on top, that is, oxygen in Ti/Al samples can reduce the reaction rate by decreasing the pre-exponential factor. Oxygen already contained in the Ti film and oxygen from the annealing ambient are incorporated in the growing TiAl3 compound during thermal annealing. In addition, a TiAl3 layer also forms at the free Ti surface during vacuum annealing when the oxygen-containing contaminants in the ambient are minimized. So far, we succeeded in accomplishing this only for large-grained Al substrates. We conclude that the formation of the TiAl3 compound at the surface is controlled by nucleation and depends sensitively on the condition of the surface layer of the Ti film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340981
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  • 7
    Electronic Resource
    Electronic Resource
    Effects of ion irradiation on conductivity of CrSi2 thin films (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3077-3080 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical resistivity measurements are used to study damage in CrSi2 thin films induced by Ne, Ar, or Xe ion irradiation over a fluence range of 1010–1015 ions cm−2. Irradiation produces a factor of 5–12 increase in film conductivity at the higher fluences. The influence of defect generation and recombination is evident. We speculate that formation of a compound defect is a dominant factor enhancing film conductivity. A temperature dependence at low fluences is reported and tentatively identified.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336931
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  • 8
    Electronic Resource
    Electronic Resource
    Reactive pulsed laser deposition of CNx films (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2652-2654 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon nitride (CNx) films were prepared by reactive pulsed laser deposition at nitrogen partial pressure PN2varying from 0 to 300 mTorr. It is found that the atomic fraction of nitrogen f in the films first increases with increasing PN2, reaches a maximum of 0.32 at PN2=100 mTorr, and then decreases to a saturated value of 0.26 at PN2(approximately-greater-than)200 mTorr. Because of the absence of energetic particles in reactive pulsed laser deposition, the limited nitrogen content cannot be attributed to preferential sputtering of nitrogen that is generally observed in particle-assisted deposition of CNx films. Infrared absorption experiments show the existence of C≡N bonds and graphitic sp2 bonds. The sp2 bonds become IR active because of symmetry breaking of graphitic rings as a consequence of nitrogen incorporation. CNx films deposited at low PN2 (e.g., 5 mTorr) are more graphitic than the diamondlike pure carbon sample deposited at PN2=0, so have a slightly narrower electron band gap Eopt and a significantly higher room-temperature electrical conductivity σR. At PN2(approximately-greater-than)200 mTorr, nitrogenation of the films is very pronounced, leading to a wide band gap (Eopt(approximately-greater-than)1.5 eV), long electron band tail (E0(approximately-greater-than)0.7 eV), and extremely low σR(〈1×10−13 Ω−1 cm−1). In addition, both the hardness and Young's modulus are greatly reduced, for example, from 41.3 and 285 GPa for the pure carbon sample to 1.2 and 23.8 GPa, respectively, at f=0.32. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113114
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  • 9
    Electronic Resource
    Electronic Resource
    Structural and mechanical properties of (B0.5−xSix)N0.5 films synthesized by dual-ion-beam deposition (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3501-3503 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural and mechanical properties of ion-beam deposited (B0.5−xSix)N0.5 films (0≤x≤0.5) were characterized by x-ray photoelectron spectroscopy, infrared absorption experiments, and nanoindentation tests. A single-layer BN film (x=0) has 70 vol. % in cubic phase (c-BN), and a hardness of 38 GPa. However, it peeled off very soon after deposition due to the high internal stress. If a buffer layer was deposited first, followed by a (B0.5−xSix)N0.5 film with x≈0.013, the whole configuration adhered very firmly to both quartz and silicon substrates. This improvement in adhesion was probably due to the formation of Si–N bonds, which served to release partly the stress inside the (B0.5−xSix)N0.5 films. Since the Si content was low, the film structure remained highly cubic, and there was no observable drop in hardness. For higher x, the cubic structure in (B0.5−xSix)N0.5 films disappeared rapidly and was replaced by a hexagonal structure. This structural change led to a rapid drop in hardness from 38 to 12 GPa. As x was further increased, more Si–N bonds were formed in the (B0.5−xSix)N0.5 layers. As a result, the hardness increased from the minimum value to a value ≈24 GPa. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117225
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  • 10
    Electronic Resource
    Electronic Resource
    WN"x: Properties and applications
    Amsterdam : Elsevier
    Thin Solid Films 153 (1987), S. 507-520 
    Details
    ISSN: 0040-6090
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0040-6090(87)90210-0
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