ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The interaction between thin layers of Au and both cleaved and sputtered p-type Hg0.72Cd0.28Te and sputtered p-type Hg0.79Cd0.21Te surfaces has been investigated with ultraviolet photoelectron spectroscopy using synchrotron radiation. Only a small loss of Hg from the interface was observed during Au deposition, in contrast to that seen during Al and In deposition reported elsewhere. The retention of Hg is explained by the lower stability of AuTe2 compared with HgTe, which makes the exchange reaction between Au and Hg unfavorable. Small differences in the Hg/Cd ratio following Au deposition with different surface preparations and material were noted. They were attributed to reduced stability of the ion-bombarded surface caused by sputter-induced defects and reduced strength of the Hg–Te bond, which resulted from the increased local CdTe concentration. Although Au diffused into the semiconductor to partially compensate for the cleavage-induced defects (which act as donors), it was not able to compensate appreciably for the larger number of sputter-induced defects.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.337728
