Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
60 (1986), S. 2558-2563
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A comparison of the kinetics of oxidation at 995 and 1345 K of the SiC(0001¯) and SiC(0001) crystal faces is made. The oxidation rate on the SiC(0001¯) (C-rich face) is higher at both temperatures. SiO2 is formed. At 1345 K, the initial oxidation process is retarded by excess surface carbon. When the excess carbon is volatilized by either CO or CO2 formation, the oxidation rate is higher at 1345 K than at 995 K.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.337121
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