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Digitale Medien

The hot-electron problem in small semiconductor devices (1986)

Hänsch, W. ; Miura-Mattausch, M.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 60 (1986), S. 650-656

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Details

ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Decreasing device dimensions will cause an increasing internal field strength in a semiconductor device. The average carrier energy is different from the thermal equilibrium value 3/2 kT. Modification of current transport is considered on different levels of approximation. In a local approximation we derive a field-dependent carrier mobility and temperature from a more general self-consistent formulation. Numerical estimation of hot-electron effects are given for a realistic n-channel metal-oxide-semiconductor field-effect transistor of various channel lengths. It is shown that both high-field and field-gradient effects will contribute.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.337408

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