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  • 1
    Electronic Resource
    Electronic Resource
    Electrical and optical properties of amorphous (Se0.7Te0.3)100−xInx system (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7334-7339 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of In impurity on the dark and photoconductivity and the optical band gap of amorphous (Se0.7Te0.3)100−xInx has been studied. The activation energy ΔE and the pre-exponential factor σ0(0,T) which appear in the dc conductivity are found to increase with increasing In content. The photocurrent, as a function of illumination intensity and time of illumination, has been measured at around room temperature. The bimolecular recombination mechanism is found to be predominant at steady state in all the samples near room temperature. The nonexponential decay, after stopping the illumination, has been explained in terms of localized-localized recombination. The data have been analyzed in terms of the dispersive diffusion controlled recombination and monomolecular recombination is found to be dominant in the transient state. The optical band gap is found to decrease with increasing In content. This decrease has been explained on the basis of metallic bonding due to incorporation of In.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356645
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of laser irradiation on structural, electrical, and optical properties of p-mercury cadmium telluride (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3516-3520 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single crystals of p-Hc1−xCdxTe (x=0.16) were grown by the Bridgeman technique. The bulk single crystals were irradiated with laser pulse of various energy densities. A pulsed laser (Nd:YAG) capable of producing 10-ns pulses of 0.53 μm wavelength (frequency doubled) with varying energy densities (2–50 mJ/cm2) was employed. dc conductivity and Hall coefficient measurements were made on the single crystal using the Van der Pauw technique in the temperature range 77–300 K for both as-grown and laser-irradiated samples. Also the x-ray diffraction pattern and transmission measurements of the samples were taken at room temperature. Electrical studies shows that the p-mercury cadmium telluride after the laser irradiation becomes n type and optical results show that the free-carrier concentration after laser irradiation increases sharply so that there is negligibly small transmission. The x-ray studies show that single crystal p-type samples after laser irradiation undergo structural changes as well, introducing phases of CdTe, Hg, and Te in the lattice.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349246
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of laser-irradiation on structural and electrical properties of CdS thin films (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6214-6219 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CdS films were deposited by a resistive heating technique onto glass substrates kept at 150 °C. The films were irradiated with laser pulses of various energy densities. A pulsed laser (Nd-doped yttrium aluminum garnet) capable of producing a 20-ns pulse of 0.53 μm wavelength (frequency doubled) with varying energy densities (2–50 mJ/cm2 ) was employed. X-ray diffraction studies showed that the crystallinity of the films improved with laser irradiation. dc conductivity and Hall coefficient measurements were made on the films in the temperature range 77–300 K for both as-grown and laser-irradiated films. It was observed that both the Hall coefficient and mobility increased with an increase of energy density as well as the number of pulses. Typically, the mobility increased from 71 to 121 cm2 V−1 s−1 after irradiation with 50 laser pulses of energy density 28 mJ/cm2 .
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345187
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  • 4
    Electronic Resource
    Electronic Resource
    Anomalous Hall effect in polycrystalline HgTe (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3723-3725 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the anomalous Hall effect and nonuniformities introduced by aging in the bulk polycrystalline HgTe, which was grown in a predetermined profile, and measurements were taken in the temperature range of 82–350 K. It is found that anomalous behavior is caused by domain formation which is due to acceptor states and this domain formation effect gets diminished by annealing the sample in a mercury atmosphere.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346310
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of annealing on the electrical properties of polycrystalline intermetallic compound HgTe (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 826-831 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline HgTe samples have been prepared by taking Hg and Te in stochiometeric compositions. The effect of annealing in mercury has also been studied. The effect of temperature on the electronic conduction mechanism and grain-boundary states has been observed through the measurement of Hall coefficient RH resistivity (ρ) and Hall mobility μH=(RH/ρ) on the polycrystalline HgTe in the temperature range ∼77–350 K. It is found that in electronic conduction in the low-temperature range, the conduction is dominated by the thermionic emission of electrons over the grain boundaries. At a critical temperature Tc where the barrier height Φb and, hence the width of the space-charge region near the grain boundaries tends to zero, a crossover from the barrier limited to the mobility limited resistivity occurs. RH is found to be thermally activated over the temperature range where the conduction mechanism is governed by the grain-boundary barrier. The experimental results are explained on the basis of a grain-boundary trapping model combined with two-phase model. It is found that the mobility and the grain size increased with annealing time. We achieved the carrier mobility of polycrystalline HgTe at 270 K to as much as 11 000 cm2/V s.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345738
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  • 6
    Electronic Resource
    Electronic Resource
    Pulsed laser-induced changes in structural and electrical properties of Pb0.8Sn0.2Te thin films (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2994-2996 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pb0.8Sn0.2Te films, grown by flash evaporation, were irradiated with Nd:YAG laser pulses of various energy densities. Transmission electron microscopy, x-ray diffraction, and electrical studies reveal that the irradiation significantly increases grain size, and the mobility increases by a factor of 5.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337753
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  • 7
    Electronic Resource
    Electronic Resource
    Hopping conduction in polycrystalline semiconductors (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 2026-2029 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of dc conductivity (σ) on polycrystalline semiconductors, viz., InSb, Si, and CdTe, have been reported in the temperature range 77–300 K. The conduction mechanism near liquid-nitrogen temperature has been identified as the hopping of charge carriers from the charged trap centers to empty traps near the Fermi level.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334390
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  • 8
    Electronic Resource
    Electronic Resource
    Effect of laser annealing on electrical and optical properties of n-mercury cadmium telluride (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3849-3852 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single crystals of n-Hg1−xCdxTe (x=0.18) were grown by the Bridgman technique. The bulk single crystals were irradiated with laser pulses of various energy densities. A pulsed laser (Nd:YAG) capable of producing 10-ns pulses of 0.53-μm wavelength (frequency doubled) with varying energy densities (2–50 mJ/cm2) was employed. dc conductivity and Hall coefficient measurements were made on the single crystal using the van der Pauw technique in the temperature range 77–300 K, for both as-grown and laser-irradiated samples. Also, transmission measurements of the samples were taken at room temperature. Both electrical and optical studies showed that laser irradiation introduces additional defects in mercury cadmium telluride (MCT), and its quality deteriorates instead of improving as observed in many other semiconductor materials. We found that laser irradiation increases free-carrier concentration and decreases the band gap of MCT.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348440
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  • 9
    Electronic Resource
    Electronic Resource
    Analysis of single polaron hopping in ac conductivity of amorphous Ge20SbxSe80−x glasses (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4785-4790 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The results for the ac conductivity over temperature range (298–500 K) and frequency range (102–107 Hz) for the Ge-Sb-Se glasses with different compositions are presented. These glasses exhibit a strong temperature dependence of ac conductivity and of its frequency exponent s. The results are discussed in the light of the correlated barrier hopping model for ac conduction. All the features observed are interpreted by taking into account the contribution of both single polarons and bipolarons. It is shown that the single polarons dominate the hopping transport process in the measured temperature range. The effect of the addition of Sb is also discussed in terms of the present model. The energy levels and densities of the defect for Ge-Sb-Se glasses are deduced from the comparison between the theoretical and experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343791
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  • 10
    Electronic Resource
    Electronic Resource
    Thermoelectric power in porous silicon (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5855-5857 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermoelectric power measurements have been made on macroporous (pore width 〉500 Å°) porous silicon samples prepared by an anodic dissolution technique. The sign of thermopower is found to be negative indicating that conduction takes place due to electrons in the conduction band. The conduction mechanism is found to be due to variable range hopping near the Fermi level for temperatures below 150 K. At higher temperatures the conduction is due to the tunneling of carriers in the localized states in the band edges. It was concluded that these localized states are formed because the nanocrystallites in porous silicon are randomly distributed in size and orientation leading to fluctuations in band gap. This results in the constitution of a disordered system on a macroscopic scale. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367444
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