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  • Articles  (73)
  • 68.55  (63)
  • mercury
  • nitrogen
  • 1990-1994  (73)
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (65)
  • Energy, Environment Protection, Nuclear Power Engineering  (8)
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  • Articles  (73)
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  • 1
    Electronic Resource
    Electronic Resource
    Aboveground nitrogen and phosphorus use by five plantation-grown trees with different leaf longevities (1991)
    Springer
    Biodegradation 14 (1991), S. 167-191 
    Details
    ISSN: 1572-9729
    Keywords: leaf longevity ; nitrogen ; nutrient use efficiency ; phosphorus ; requirement ; retranslocation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Energy, Environment Protection, Nuclear Power Engineering , Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Abstract Aboveground nitrogen (N) and phosphorus (P) requirement, retranslocation and use efficiency were determined for 28-year-old red oak (Quercus rubra L.), European larch (Larix decidua Miller), white pine (Pinus strobes L.), red pine (Pinus resinosa Ait.) and Norway spruce (Picea abies (L) Karst.) plantations on a similar soil in southwestern Wisconsin. Annual aboveground N and P requirements (kg/ha/yr) totaled 126 and 13 for red oak, 86 and 9 for European larch, 80 and 9 for white pine, 38 and 6 for red pine, and 81 and 13 for Norway spruce, respectively. Nitrogen and P retranslocation from current foliage ranged from 81 and 72%, respectively, for European larch, whereas red pine retranslocated the smallest amount of N (13%) and Norway spruce retranslocated the smallest amount of P (18%). In three evergreen species, uptake accounted for 72 to 74% of annual N requirement whereas for two deciduous species retranslocation accounted for 76 to 77% of the annual N requirement. Nitrogen and P use (ANPP/uptake) was more efficient in deciduous species than evergreen species. The results from this common garden experiment demonstrate that differences in N and P cycling among species may result from intrinsic characteristics (e.g. leaf longevity) rather than environmental conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00000806
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  • 2
    Electronic Resource
    Electronic Resource
    A ground water nitrogen budget for a headwater swamp in an area of permanent ground water discharge (1991)
    Springer
    Biodegradation 14 (1991), S. 209-224 
    Details
    ISSN: 1572-9729
    Keywords: ground water ; hydrology ; nitrogen ; mass balance ; nutrient retention ; swamp
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Energy, Environment Protection, Nuclear Power Engineering , Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Abstract Ground water inputs and outputs of N were studied for a small ground water discharge swamp situated in a headwater drainage basin in southern Ontario, Canada. Darcy's equation with data for piezometers was used to measure inputs of shallow local ground water at the swamp margin and deep regional ground water beneath the swamp. Ground water flux was also quantified by measuring ground water discharge to the outlet stream draining the swamp in combination with a chemical mixing model to separate shallow and deep ground water components based on chloride differences. Estimates of shallow ground water flux determined by these two approaches agreed closely however, the piezometer data seriously underestimated the deep ground water input to the swamp. An average ground water input-output budget of total N (TN) total organic nitrogen (TON) ammonium (NH4 +-N) and nitrate (NO3 --N) was estimated for stream base flow periods which occurred on an average of 328 days each year during 1986–1990. Approximately 90% of the annual NO3 --N input was contributed by shallow ground water at the swamp margin. Deep ground water represented about 65% of the total ground water input and a similar proportion of TON and NH4 +-N inputs. Annual ground water NO3 --N inputs and outputs were similar whereas NH4 +-N retention was 4 kg ha-1 representing about 68% of annual ground water input. Annual TON inputs in ground water exceeded outputs by 7.7 kg ha (27%). The capacity of the swamp to regulate ground water N fluxes was influenced by the N chemistry of ground water inputs and the hydrologic pathways of transport within the swamp.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00000808
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  • 3
    Electronic Resource
    Electronic Resource
    Optical constants of thin CoSi2 films on silicon (1990)
    Springer
    Applied physics 50 (1990), S. 177-181 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 73.40 ; 78.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The optical transmission of CoSi2 films of thickness 2.6–15 nm is measured in the wavelength range 1–20 μm. The optical constants are evaluated by taking into account multiple reflections in the film and by fitting a Drude model. The plasma frequency ωp=5.4−7.6 eV is equivalent to a carrier density n eff=3×1022 cm−3 and one carrier per unit cell. The relaxation frequency of the plasma resonance assumes high values Γ=2 eV near the interface to silicon and decreases into the bulk film over several nanometers. Films grown off-axis from the (111) Si orientation exhibit an enhanced relaxation frequency.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00343415
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  • 4
    Electronic Resource
    Electronic Resource
    Synthesis of chromium silicide with laser pulses (1990)
    Springer
    Applied physics 50 (1990), S. 411-415 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 79.20D ; 82.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thin chromium films, 60 nm thick, were deposited onto single-crystal silicon wafers. The samples were irradiated with 30 ns single pulses from a Nd: glass laser at fluences ranging from 0.4 to 2.25 J/cm2. Rutherford backscattering spectrometry, transmission electron microscopy and electron diffraction measurements evidence the formation of CrSi2 layers at the Cr/Si interface. The silicide thickness depends on the laser fluence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323599
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  • 5
    Electronic Resource
    Electronic Resource
    Influence of implant dose and target temperature on crystal quality and junction depth of boron-doped silicon layers (1991)
    Springer
    Applied physics 53 (1991), S. 222-226 
    Details
    ISSN: 1432-0630
    Keywords: 61.80 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract 30 keV boron ions are implanted at doses of 2×1014 and 2×1015 cm−2 in 〈100〉 silicon wafers kept at room or liquid-nitrogen temperatures. The samples are analyzed by double-crystal X-ray diffraction, transmission electron microscopy and secondary ion-mass spectrometry before and after furnace annealing at 800°C. The low-dose implant does not amorphize the substrate at any of the temperatures, and residual defects together with a remarkably enhanced boron diffusion are observed after annealing. The high-dose implant amorphizes the substrate only at low temperature. In this case, unlike the room-temperature implant, the absence of any residual defect, the incorporation of the dopant in substitutional position and a negligible profile braodening of boron are obtained after annealing. In principle, this process proves itself a promising step for the fabrication of p +/n shallow junctions with good electrical characteristics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324256
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  • 6
    Electronic Resource
    Electronic Resource
    Kinetics of CW laser-induced crystallization and oxidation of thin, Sb, Se, and Sb2Se3 films in air (1991)
    Springer
    Applied physics 52 (1991), S. 192-196 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 81.40 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thin films of Sb, Se and Sb2Se3 are deposited onto glass and irradiated by a cw-Ar+ laser beam. The kinetics of crystallization and oxidation are traced via the time dependence of optical reflectivity and temperature, T, of the irradiated zone. For Sb2Se3, transformations start abruptly when T attains a critical value, T c, independently of the laser beam power. These T c values are comparable to the ones observed under furnace annealing conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324417
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  • 7
    Electronic Resource
    Electronic Resource
    Heavy carbon doping of AlAs by elemental-source molecular beam epitaxy (1993)
    Springer
    Applied physics 57 (1993), S. 217-219 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Heavily carbon-doped AlAs films with free-hole concentrations in excess of 1019 cm−3 have been grown by conventional molecular beam epitaxy using elemental sources. The hole concentration in AlAs:C saturates at 6×1019 cm−3 without any detectable deterioration of the smooth surface morphology and of the structural properties. At very high carbon concentrations the lattice contraction due to the smaller covalent radius of carbon leads to an in-plane lattice constant of the AlAs:C films which is even smaller than that of the GaAs substrate. The high freehole concentration and the tunability of the lattice constant are important for application in p-type GaAs/AlAs Bragg reflectors in surface emitting lasers having a low series resistance and a significantly reduced lattice mismatch.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00332591
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  • 8
    Electronic Resource
    Electronic Resource
    Compositional and structural characterization of strained Si/Si x Ge1−x multilayers and interfaces by high-resolution transmission electron microscopy (1993)
    Springer
    Applied physics 57 (1993), S. 407-414 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 68.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A method is described for the quantitative characterization of strained Si/Si x Ge1−x multilayers and interfaces by high-resolution transmission electron microscopy (HRTEM) in [110] and [100] crystal projections. The method relies on systematic variations of the image contrast with variations of the local composition x for certain ranges of objective lens defocus Δf and specimen thickness t and takes tetragonal lattice distortions fully into account. From an extensive study of the image formation process for Si x Ge1−x alloys and coherent Si/Si x Ge1−x interfaces, ranges of Δf and t were identified by Bloch-wave and multi-slice image simulations at 400 keV for which a quasi-linear functional relationship between the composition x and the first-order Fourier coefficients of the image intensity exists. By application of a novel image-processing algorithm, which allows a precise measurement of image Fourier coefficients in geometrically distorted lattice images, local composition values x can be determined at near-atomic resolution with an accuracy of Δx ≤ ±0.1 and interface sharpness can be detected at the atomic level. Recent applications of the method to the characterization of interfaces of strained Si x Ge1−x layers and short-period Si m Ge n superlattices fabricated by different deposition techniques will be presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331779
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  • 9
    Electronic Resource
    Electronic Resource
    Interfacial reaction barriers during thin-film solid-state reactions: The crystallographic origin of kinetic barriers at the NiS2/Si(111) interface (1993)
    Springer
    Applied physics 57 (1993), S. 415-425 
    Details
    ISSN: 1432-0630
    Keywords: 68.35 ; 68.55 ; 82.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Epitaxial NiSi2 islands have been grown on Si(111) substrates by the direct reaction of nickel vapour with the silicon substrate in ultra-high vacuum at 400° C. Growth kinetics was shown to depend on the orientation of the islands: A-oriented islands grow about ten times faster than B-oriented ones, with the ratio of the advance rates of the main growth fronts even reaching 30. Applying plan-view transmission electron microscopy and high-resolution electron microscopy of cross sections, a corresponding difference was found in the structure of the NiSi2/Si(111) growth front: Steps at the B-oriented growth front were of three or six interplanar (111) spacings in height, whereas at the A-oriented growth front step-like defects of less than one interplanar (111) spacing in height were observed. These observations are explained by an atomic-scale model of the solid-state reaction, which involves the diffusion of nickel to the interfaces and the nucleation and subsequent lateral propagation of interfacial steps. The difference in the reaction kinetics originates from the presence of kinetic reaction barriers at the NiSi2/Si(111) growth fronts, the barrier at the B-front being higher owing to the lower formation rate of steps of triple atomic height than that of steps of lower height at the A-NiSi2/Si(111) growth front.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331780
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  • 10
    Electronic Resource
    Electronic Resource
    Ion-beam-induced atomic transport and phase formation in the system nickel/antimony (1993)
    Springer
    Applied physics 57 (1993), S. 469-473 
    Details
    ISSN: 1432-0630
    Keywords: 61.80 ; 68.35 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Nickel-antimony intermetallic compounds of different stoichiometries were studied by means of perturbed angular correlation (PAC) spectroscopy. The hyperfine interaction parameters for 111Cd probes in the crystal lattices of NiSb, Ni5Sb2, Ni3Sb and NiSb2 were determined. The results are discussed in the light of crystallographic data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331787
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  • 11
    Electronic Resource
    Electronic Resource
    Entropy-controlled site occupation of CO adsorbed on Ni(100) (1993)
    Springer
    Applied physics 57 (1993), S. 499-505 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The adsorption of CO on a Ni(100) surface has been studied by FT-IRAS in the temperature range from 85 K to 300 K. At 300 K and for Θ=0.5, the CO molecules are predominantly adsorbed in on-top sites with only a minor fraction located at two-fold bridge sites. Measurements on a Ni(100) surface pre-covered with sulphur, oxygen and carbon indicate that the occupation of bridge sites may be caused by small amounts of surface impurities. The relative broadness of the infrared bands is explained by CO molecules occupying intermediate positions at domain walls. Upon lowering the temperature, the bridge sites are increasingly occupied at the expense of terminal sites. This process is completely reversible and is explained by a contribution of the hindered translations of the adsorbed CO molecules to the entropy. At 85 K and for low initial coverages, we observe an unusual high CO stretching frequency at 2205 cm−1 which cannot be explained at present.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331748
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  • 12
    Electronic Resource
    Electronic Resource
    High-resolution diffraction-space mapping and topography (1994)
    Springer
    Applied physics 58 (1994), S. 121-127 
    Details
    ISSN: 1432-0630
    Keywords: 07.85 ; 68.55 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The importance of collecting the distribution of scattered X-rays in two dimensions with the “right probe” will be addressed. The data-collection method will be briefly covered and how this greatly assists the interpretation of structural features giving rise to the distributed X-ray scattering. The combination of diffraction-space mapping with multiple crystal topography will also be presented to show how any region of scattering can be related to lateral structural changes or crystal imperfections. The simulation of the diffraction profiles of structures with defects will be addressed as well as the interpretation of “unusual and strange” diffraction features observed in high resolution, which yield further useful information on the materials under study.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324366
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  • 13
    Electronic Resource
    Electronic Resource
    Thermal stability of Mo/Si multilayer soft-X-ray mirrors fabricated by electron-beam evaporation (1994)
    Springer
    Applied physics 58 (1994), S. 371-376 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 68.65 ; 78.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Mo/Si multilayers are fabricated by electron-beam evaporation in UHV at different temperatures (30° C, 150° C, 200° C) during deposition. After completion their thermal stability is tested by baking them at temperatures (T bak) between 200° C and 800° C in steps of 50° C or 100° C. After each baking step the multilayers are characterized by small angle CuKα-X-ray diffraction. Additionally, the normal incidence soft-X-ray reflectivity for wavelengths between 11 nm and 19 nm is determined after baking at 500° C. Furthermore, the layer structure of the multilayers is investigated by means of Rutherford Backscattering Spectroscopy (RBS) and sputter/Auger Electron Spectroscopy (AES) technique. While the reflectivity turns out to be highest for a deposition temperature of 150° C, the thermal stability of the multilayer increases with deposition temperature. The multilayer deposited at 200° C stands even a 20 min 500° C baking without considerable changes in the reflectivity behaviour.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323612
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  • 14
    Electronic Resource
    Electronic Resource
    Scanning and friction-force microscopy of thin C60 films on GeS(001) (1994)
    Springer
    Applied physics 59 (1994), S. 11-15 
    Details
    ISSN: 1432-0630
    Keywords: 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The surface morphology of thin C60 films grown epitaxially under ultra-high vacuum conditions on layered GeS(001) substrates has been studied by scanning force microscopy. The individual C60 layers were imaged down to molecular resolution. The growth mechanism was found to be of layer-by-layer type at the initial stages of growth, but seems to be very sensitive to the substrate temperature. The tribological properties of these films have been probed simultaneously by means of lateral force microscopy. The frictional coefficient of the C60 layers was determined to be significantly smaller than the frictional coefficient of the GeS substrate. This demonstrates that well-ordered C60 films can have even better lubricating properties than a layered material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00348413
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  • 15
    Electronic Resource
    Electronic Resource
    Spatially-resolved characterization of HTSC-films near T c by laser raster microscopy with thermal excitation (1993)
    Springer
    Applied physics 56 (1993), S. 119-122 
    Details
    ISSN: 1432-0630
    Keywords: 74.70 ; 73.60 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A method (laser raster microscopy with thermal excitation, LRMTE) for characterizing high-T c thin-film superconductors (HTSC) with microscopic resolution is described. By means of spatially resolved laser excitation and subsequent monitoring of the time dependence of the film resistivity at a base temperature near the transition temperature T c, spatial variations of the transition temperature (T c), of the temperature coefficient of the resistivity (dQ/dT), of the heat conductivity and heat capacity of the film and of the heat conductivity between film and substrate can be detected with high spatial resolution (15 μm have been achieved so far).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00517677
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  • 16
    Electronic Resource
    Electronic Resource
    Modeling of gas-phase processes in laser-induced chemical vapor deposition from Cr(CO)6 with an excimer laser (1993)
    Springer
    Applied physics 56 (1993), S. 138-146 
    Details
    ISSN: 1432-0630
    Keywords: 81.15 ; 68.55 ; 82.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Laser-induced chemical vapor deposition from Cr(CO)6 with an excimer laser has been modeled and simulated to investigate the kinetics and mechanisms of the deposition. The model concerns gas-phase processes including photolysis of Cr(CO)6, transportation of photofragments to the substrate surface, and elimination of photofragments through chemical reactions during transportation. The photofragments are eliminated through the reforming to Cr(CO)6 that is divided into the two stages: stabilization of the photofragments in excited states by collisions with buffer gases (CO, Ar) and recombination of the photofragments in the ground state with CO. The simulation shows that the deposition rate without additional buffer gases is of the same order as the experimental rate and that deposition rates in the presence of additional CO and Ar agree qualitatively with experimental results. This suggests that the supply of Cr species to the substrate surface is mainly controlled by the gas-phase processes where the chemical reactions eliminating photofragments play an important role. Applications of the model for the deposition under other conditions are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00517681
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  • 17
    Electronic Resource
    Electronic Resource
    Monte-Carlo study of reactive ion-beam assisted film growth (1993)
    Springer
    Applied physics 56 (1993), S. 561-565 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A Monte-Carlo computer program which is composed of ion implantation simulation and deposition calculation is described. It is applied to study TiN film growth by reactive ion-beam assisted deposition in a N2 gas environment. The relationship between film composition and nitrogen partial pressure in the processing chamber is established. The influence of ion energy, atomic arrival rate ratio and ion species on the thickness of the film is studied. We also investigated the intermixing at the interface region between the film and substrate. The calculated data are compared with experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331405
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  • 18
    Electronic Resource
    Electronic Resource
    On the interpretation of the RHEED intensity oscillations during the growth of vicinal faces (1990)
    Springer
    Applied physics 50 (1990), S. 349-352 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A quantitative treatment of the crystallization kinetics in MBE growth of vicinal surfaces results the relation l 2=2D sτK between the surface diffusion coefficient D s, the time τ for a monolayer deposition and the interstep distance l at which the RHEED intensity oscillations disappear. The correction factor K depends on the size and the energy of the two-dimensional critical nucleus and it is estimated to be smaller than 10−2. The currently used interpretation of the RHEED intensity oscillations ignores the correction factor K and, therefore, the calculated values of D s are several orders of magnitude smaller than its real values. The surface transport during the time of growth interruption is discussed in connection with the tendency to three dimensional growth at every second interface (where a deposition of the material with strong intermolecular bonds starts) of a small period superlattice.
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    URL: http://dx.doi.org/10.1007/BF00324505
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  • 19
    Electronic Resource
    Electronic Resource
    Models for thermal dissociation of silane on a polysilicon surface (1990)
    Springer
    Applied physics 50 (1990), S. 215-220 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Simple models for the thermally activated dissociation reaction of silane and silicon growth on a polycrystalline silicon surface are presented. The models are fitted to recent experimental molecular beam scattering data for the low-pressure reactive sticking coefficient. Thermally activated few-step models fit the data reasonably well, and thus, we are able to explain the temperature and pressure dependencies of the observed deposition rate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00343420
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  • 20
    Electronic Resource
    Electronic Resource
    Passivation of n-GaAs (100) surface by a Langmuir-Blodgett film (1990)
    Springer
    Applied physics 50 (1990), S. 499-502 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 73.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We report the results of passivation of n-GaAs surface by Langmuir-Blodgett films. The capacitance-voltage and current-voltage characteristics in a metal-insulator-semiconductor configuration fabricated using films as insulators, show that the frequency dispersion of the accumulation capacitance is small, indicating that the high frequency capacitance under accumulation is due to the LB film. It has been shown that it reduces the surface barrier characteristic of GaAs surfaces, and may offer hope for unpinning the surface Fermi level. We offer a possible explanation for these findings in terms of the advanced unified defect and the effective work function models.
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    URL: http://dx.doi.org/10.1007/BF00324574
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  • 21
    Electronic Resource
    Electronic Resource
    Optical and electrical properties of optimized thin gold films as top layer of MIS solar cells (1992)
    Springer
    Applied physics 54 (1992), S. 204-207 
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    ISSN: 1432-0630
    Keywords: 73.60 ; 78.70 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The optical spectral response between 340–860 nm and electrical conductivity measurements were made on thermally evaporated gold films in the thickness range 50–130 Å in order to identify optimal properties for their use as the top layer of MIS solar cells. Films of lower evaporation rate and thickness range 70–100 Å were found to have high transmittance and low reflectance, which is desirable for the above purpose. Films thinner than 70 Å had poor electrical conductivity and thicker than 100 Å had poor solar transmittance, hence were rejected. Improved transmittance and conductivity were obtained upon annealing the film at 250°C for about two hours.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323913
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  • 22
    Electronic Resource
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    Epitaxial growth of lattice mismatched SrF2 films on (100) GaAs (1992)
    Springer
    Applied physics 54 (1992), S. 284-287 
    Details
    ISSN: 1432-0630
    Keywords: 81.10 ; 81.15 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract For the first time insulating epitaxial SrF2 films on (100) GaAs substrates have been grown by thermal deposition followed by in situ annealing process. Structural properties of SrF2 films examined by X-ray diffraction, scanning electron microscopy and transmission electron microscopy indicate a very good crystalline quality. It is observed from the X-ray analysis that SrF2 layers thinner than 100 nm suffer two dimensional compressive stress due to the lattice misfit while those thicker than 100 nm suffer two dimensional tensile stress due to the difference in the thermal expansion coefficients.
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    URL: http://dx.doi.org/10.1007/BF00323851
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    Optical gate realization with thin CdS films (1991)
    Springer
    Applied physics 53 (1991), S. 539-546 
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    ISSN: 1432-0630
    Keywords: 42.65 P ; 42.65 G ; 68.55 ; 19.08 ; 78.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A spray deposited thin (6 μm) CdS film laser induced optical device (LIOD) was studied experimentally and theoretically. The all optical bistable (all-OB) and the hybrid bistable (HB) features at 210 K were investigated. It is shown for the first time that the observation of equal contrasted all-OB and HB loops is possible in thin CdS films. The slope of the all-OB loops were calculated with a new theoretical model which is established on the thermal enhanced shift of the absorption edge and the transmitted light equilibrium condition. A good agreement with the experiments is found. Furthermore, it is pointed out that the electron life time determines the fashion and the contrast of the HB loops. In this context the proof is furnished that the maximal possible HB loops is observed. Finally, the influence of Joule's heat on OB and HB is demonstrated.
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    URL: http://dx.doi.org/10.1007/BF00331543
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  • 24
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    MOS transistors with epitaxial Si, laterally grown over SiO2 by liquid phase epitaxy (1992)
    Springer
    Applied physics 54 (1992), S. 103-105 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 73.40T ; 85.30D
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We describe the first MOS transistors fabricated in silicon-on-insulator layers, obtained by liquid phase epitaxial lateral overgrowth of Si over SiO2. Growth is performed around 930°–920° C using indium as a solvent. The layers are therefore p-type and have a doping of 4·1016 cm−3. Electron mobilities of 540 cm2/Vs are obtained in the inversion channel; the threshold voltage of transistors with a gate length of 14.1 μm is 510 mV. Our data demonstrate the applicability of liquid-phase epitaxial Si grown over oxidized Si for future use in three-dimensional integrated-device processing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00348140
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    Trench formation in surfactant mediated epitaxial film growth of Ge on Si(100) (1992)
    Springer
    Applied physics 54 (1992), S. 265-269 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 61.16D ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We have used STM to study the surface morphology of thin epitaxial Ge films grown on Si(001) in the presence of the “surfactant” As. The surfactant forces layer-by-layer growth up to 12 ML Ge coverage which could partly be explained by the geometrical surface arrangement of the growing film. Beyond 12 ML coverage we observed a network of trenches which decorate the earlier described V-shaped defects inside the film. Overgrowth of such defects is studied and a mechanism discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323848
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    Effect of oxygen segregation on the surface structure of single-crystalline niobium films on sapphire (1992)
    Springer
    Applied physics 54 (1992), S. 350-354 
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    ISSN: 1432-0630
    Keywords: 61.14.H ; 68.20 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Single-crystalline Nb films are grown on (1120) oriented sapphire substrates by electron-beam evaporation in ultra-high vacuum. The films are studied in-situ by RHEED and Auger analysis. At a substrate temperature T S=750° C the RHEED pattern shows a smooth growth of bcc-Nb in the [110] direction. In addition to the fundamental streaks, we observe superlattice streaks of fractional order in several azimuthal directions. The reciprocal lattice of the surface is determined. The basic vectors of the superlattice in real space are given by b 1=2a 1, b 2=−a 1+3a 2 where a 1 and a 2 are the basic vectors of the Nb (110) surface. Auger analysis shows that the surface of these films is contaminated with oxygen. Therefore, the superstructure is attributed to a modified surface structure due to segregated oxygen, possibly having diffused from the sapphire to the film surface. The superstructure dissappears during further evaporation of Nb at T S〈450° C with a concomitant decrease of the oxygen signal. Nb films on sapphire with a clean, oxygen-free surface can only be prepared at lower temperatures in an island-growth mode.
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    URL: http://dx.doi.org/10.1007/BF00324200
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    Improvement of corrosion resistance of carbon steel using chemical vapor deposition from Cr(CO)6 with an ArF excimer laser (1992)
    Springer
    Applied physics 55 (1992), S. 207-212 
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    ISSN: 1432-0630
    Keywords: 81.15 ; 81.60 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Corrosion resistance of carbon steel coated with thin film deposited from Cr(CO)6 using an ArF excimer laser (193 nm) has been evaluated by an electrochemical method as a function of laser beam intensity. The carbon steel coated with the film formed at higher beam intensity shows higher corrosion resistance. Microstructure, composition, and thickness of the films have also been investigated. SEM micrographs show that the films consist of small grains which decrease in size with increasing beam intensity. Auger electron spectroscopy (AES) combined with Ar+ beam sputtering reveals that the films deposited at higher beam intensity give higher chromium content, and that the thickness at a fixed total irradiation energy increases up to the intensity of 10 MW cm−2, falling above this intensity. In addition, the change of film thickness by addition of buffer gases (Ar, CO, and H2O) has been investigated. The thickness is 10 times smaller under the addition of H2O, and twice smaller under the addition of Ar or CO than without the addition of gases. A deposition mechanism based on photolysis of Cr(CO)6 in the gas phase is proposed related to the experimental data after the discussion of several possible mechanisms.
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    URL: http://dx.doi.org/10.1007/BF00334225
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    Texture formation in polycrystalline diamond vapour growth under the influence of a pulsed supersonic beam (1992)
    Springer
    Applied physics 55 (1992), S. 347-351 
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    ISSN: 1432-0630
    Keywords: 61.50.Cj ; 61.50.Jr ; 68.55 ; 81.10.Bk
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Polycrystalline diamond film deposition is studied under the influence of a pulsed supersonic beam. The beam is formed by a high-pressure value which is used as gas inlet in an otherwise conventional hot-filament reactor. The growth rate of the films as well as the typical size of the microcrystallites are independent of the stagnation pressure behind the nozzle of the valve as long as the background pressure and the gas flow through the chamber are kept constant. In contrast, a drastic change in texture formation is found.
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    URL: http://dx.doi.org/10.1007/BF00324083
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    Study of the gas-phase parameters affecting the silicon-oxide film deposition induced by an ArF laser (1993)
    Springer
    Applied physics 57 (1993), S. 181-185 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 78.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A study of the gas-phase parameters involved in ArF laser induced chemical vapour deposition of silicon-oxide thin films is presented. A complete set of experiments has been performed showing the influence of the concentration of the precursor gases, N2O and SiH4, and their influence on total and partial pressures on film growth and properties. In this paper we demonstrate the ability of this LCVD method to deposit silicon oxide films of different compositions and densities by appropriate control of gas composition and total pressure. Moreover, a material specific calibration plot comprising data obtained using different preparation techniques is presented, allowing determination of the stoichiometry of SiO x films by using FTIR spectroscopy independently of the deposition method. For the range of processing conditions examined, the experimental results suggest that chemical processes governing deposition take place mainly in the gas phase.
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    URL: http://dx.doi.org/10.1007/BF00331442
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    Ion-beam-induced atomic transport and phase formation in the system nickel/antimony (1993)
    Springer
    Applied physics 57 (1993), S. 353-361 
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    ISSN: 1432-0630
    Keywords: 61.80 ; 68.35 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Sb/Ni multilayers of 200 nm total thickness were ion-beam mixed with 900 keV Xe++ or 600 keV Ar++ ions using fluences up to 1016 ions/cm2. The formation of crystalline intermetallic phases was observed by X-ray diffraction (XRD). To investigate, on a microscopic scale, the mixing-effects the perturbed angular correlation (PAC) technique was applied using some 1012 implanted radioactive 111In ions. The different phases were identified in the PAC spectra by comparison with those taken for single-phase material of intermetallic Ni/Sb compounds and pure Ni and Sb. After the 111In implantation usually up to 50% of the probes are found with PAC-parameters typical for the single metallic layers. The rest of the probes showed a complex mixture of electric field gradients (EFG). During ion-beam mixing this fraction increased to 100%. In some experiments individual EFGs were resolved indicating the formation of crystalline NiSb and Ni5Sb2 intermetallic phases.
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    URL: http://dx.doi.org/10.1007/BF00332289
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    Preparation of ultrathin metal-oxide layers by means of Langmuir-Blodgett films (1994)
    Springer
    Applied physics 58 (1994), S. 557-562 
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    ISSN: 1432-0630
    Keywords: 68.55 ; Gi
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Langmuir-Blodgett (LB) films of fatty acid salts (Y-stearate, Y-arachidate, Cu-arachidate, Ba-stearate) were thermally oxidized. As a result one obtains ultrathin (a few Å thick) metal-oxide films at the substrate. The surface of the metal-oxide films was found to be rather inhomogeneous. Y and Cu ions remain quantitatively at the substrate despite the heating procedure. A linear dependence between area density of the metal ions in the oxidized films and the number of monolayers of the LB films was observed. The preparation of a mixed metal-oxide film containing Y, Ba, Cu with a given stoichiometry was found to be difficult due to the effect of counter ion exchange. The samples were investigated by means of plasma-desorption and spontaneous-desorption mass spectrometry, by Rutherford back-scattering and electron microscopy.
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    URL: http://dx.doi.org/10.1007/BF00348166
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    Atomic force microscopy and UV-visible absorption-spectroscopy studies of ZnO nanometer colloidal particles supported on graphite (1994)
    Springer
    Applied physics 59 (1994), S. 115-117 
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    ISSN: 1432-0630
    Keywords: 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract ZnO nanometer particles were synthesized by depositing ZnO colloidal suspensions onto the substrate of Highly Oriented Pyrolytic Graphite (HOPG). The isolated particles and their aggregation phase were directly imaged by Atomic Force Microscopy (AFM). High-resolution AFM images have been used to measure the diameter of individual particles, and large area images revealed that these ZnO particles on graphite surface form netlike aggregation. Experimental results also indicated that dispersive particles on a flat area are very mobile and easy to be pushed around during scanning due to the their weak adsorption on the substrate and tip-particle interactions.
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    URL: http://dx.doi.org/10.1007/BF00332203
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    Scanning tunneling microscopy study of molecular order at liquid-solid interfaces (1994)
    Springer
    Applied physics 59 (1994), S. 119-133 
    Details
    ISSN: 1432-0630
    Keywords: 68.45 ; 68.55 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Adsorbates of normal alkane C36H74, cycloalkanes (CH2)48 and (CH2)72, decanol C10H21OH, 4-hexyl-4′-CyanoBiphenyl (6CB) and 4-octyl-4t′-CyanoBiphenyl (8CB) on graphite and β-Nb3I8 were studied by Scanning Tunneling Microscopy (STM), and the molecular arrangements at the liquid-solid interface were examined. Large-scale STM images show that the adsorbates possess complex multilayered structures, and that molecular ordering at the liquid-solid interfaces occurs primarily in the immediate vicinity of the substrate. Molecular-scale STM images are primarily determined by the electronic contributions of the most protruded atoms of the topmost overlayer. The underlying overlayers and the substrate affect the images indirectly by perturbing the topography of the topmost overlayer. The STM images of the adsorbates on graphite show that the atomically flat surface of graphite leads organic molecules to form lamella-like structures, while on the grooved surface of β-Nb3I8, long chain-like molecules are trapped in the grooves. We were unable to image the cycloalkanes on β-Nb3I8, which suggests that the cycloalkanes cannot assemble on the grooved surface due to a mismatch between the molecular shape and surface topography. The layers of 6CB and 8CB adsorbed on β-Nb3I8 exhibit two types of domains, which may be related to how the grooves of the β-Nb3I8 surface are occupied by the organic molecules. The STM images of decanol adsorbed on β-Nb3I8 show two domains of different brightness. The relative brightness of these domains switches reversibly as the gap resistance is changed in the region around −60 MΩ.
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    The growth of crystalline vapor deposited carbon-60 thin films (1993)
    Springer
    Applied physics 56 (1993), S. 185-192 
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    ISSN: 1432-0630
    Keywords: 61.10 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thin films (25-2500 Å) of C60 molecules have been deposited on both (001) NaCl and mica substrates at varying temperatures by resistive evaporation. Both electron diffraction and high resolution microscopy have been used to assess the degree of crystallinity, the orientational ordering and the nature of the defects present in these face-centered-cubic films. For NaCl, optimum conditions yielded polycrystalline films with a tendency towards a 〈110〉 orientation, while for mica, extended single crystal films have been fabricated which exhibit a 〈111〉 direction normal to the film surface.
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    Growth stages of YSZ-buffer layers and YBa2Cu3O7−x thin films on silicon substrates studied by scanning probe microscopy (1994)
    Springer
    Applied physics 59 (1994), S. 57-62 
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    ISSN: 1432-0630
    Keywords: 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Scanning probe microscopy has been applied to study various growth stages of YSZ (yttria-stabilized zirconia) buffer layers on silicon and of YBa2Cu3O7−x thin films on YSZ/Si. YSZ buffer layers of 75 nm thickness exhibit a remarkable smooth surface with a rms roughness of about 0.5 nm for a surface area of 5 μm×5 μm. The subsequent growth of YBa2Cu3O7−x thin films was investigated from nucleation to the formation of growth hills. Screw dislocations were found only in very rare cases.
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    URL: http://dx.doi.org/10.1007/BF00348420
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    Selective imaging of self-assembled monolayers by tunneling microscopy (1994)
    Springer
    Applied physics 59 (1994), S. 135-138 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 61.16.Ch
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The properties of thin organic films offer many challenging opportunities for science and technology. A crucial requirement for the advancement of molecular film technology is the selective characterization and modification on an atomic level. Local proximal probes like Scanning Tunneling Microscopy (STM) or Atomic Force Microscopy (AFM) bear certainly the potential for this purpose. So far, however, mainly adsorbed organic molecules lying flat on a smooth substrate have been imaged with near atomic resolution. Here, we demonstrate the ability of STM to selectively image self-assembled monolayers of long-chain molecules (hexanethiol) oriented upright on the substrate Au(111) with molecular resolution. Upon proper choice of the tunneling parameters we can image the molecular head-group anchored at the substrate and/or the molecular tail group.
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    Vibrational property of the slow N 2 + ions deposited SiNx films (1994)
    Springer
    Applied physics 59 (1994), S. 445-448 
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    ISSN: 1432-0630
    Keywords: 61.14 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We have investigated vibrational properties of silicon-nitride films, SiNx (0.3≤×≤1.33), produced by a non-thermal method using high-resolution electron energy loss spectroscopy. The results, based on a continuous random network model assuming a planar XY3 vibrational bond unit, show that the Si-N bonds in the films closely resemble those in typical thermal silicon nitride although nitrogens occupy some metastable binding sites. We estimate force constants of the restoring forces for a Si3N bond unit, which tend to increase gradually with increasing nitrogen content x. In particular, the central force constant k1 for the in-plane stretching mode of silicon atoms varies with x in the range 297≤k≤331 N/M, larger than the theoretical value for a nitrogen atom imbedded in a pure Si crystal.
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    URL: http://dx.doi.org/10.1007/BF00331727
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    CW laser-assisted oxidation of thin Cd, In, Sn, and Zn films in air (1990)
    Springer
    Applied physics 50 (1990), S. 311-315 
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    ISSN: 1432-0630
    Keywords: 81.60 ; 61.80 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thin films of Cd, In, Sn, and Zn are deposited onto glass and irradiated in air by means of a cw-Ar+ laser beam. The films are oxidized. The variations of the diameter of the oxidized zones are measured as a function of time and laser beam power, P. The temperature is measured by an interferometric method. It is shown that oxidation proceeds rapidly at some critical temperature, independent of P over some range of P, in the cases of Cd, In, and Zn. These critical temperatures correspond to the melting temperatures of Cd and In. No relation to any specific temperature of the Zn-O phase diagram is found. Feedback effects are also discussed.
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    Preparation and characterization of molybdenum diselenide thin films (1990)
    Springer
    Applied physics 51 (1990), S. 155-159 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 73.60F
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract MoSe2 layers, synthesized by annealing a molybdenum foil under selenium pressure, have been investigated by scanning electron microscopy, X-ray analysis, electron spectroscopy (XPS) and electrical resistance measurements. It has been found that stoichiometric layers are obtained after appropriate processing. The films crystallize in the hexagonal structure. The crystallites develop preferentially along the c axis. The binding energies deduced from the XPS lines were found to be in good agreement with those of the reference powder. The electrical resistance is governed by hopping conduction in the low temperature range (80–250 K) and by grain boundary scattering mechanisms at higher temperatures.
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    URL: http://dx.doi.org/10.1007/BF00324281
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    InSb/CdTe heterostructures grown by MBE (1991)
    Springer
    Applied physics 52 (1991), S. 19-27 
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    ISSN: 1432-0630
    Keywords: 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract InSb/CdTe heterostructures were grown by MBE, including a 10 layer “superlattice”. The structures were characterized by X-ray diffraction, van der Pauw measurements, and SNMS depth profiling. The interfaces widen because of interdiffusion and through the formation of an interface compound from the reaction of Te with the InSb surface. The interface compound is identified as strained InTe(II). The interfaces are still too wide for practical devices. Thermochemical analysis indicates that the reaction can be suppressed by applying a Cd overpressure. The diffusion of In and Sb in CdTe is very fast and will necessitate a MEE growth scheme at lower temperatures.
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    Optical and structural properties of thin films deposited from laser fused Zirconia, Hafnia, and Yttria (1992)
    Springer
    Applied physics 54 (1992), S. 533-537 
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    ISSN: 1432-0630
    Keywords: 78.65 ; 68.55 ; 81.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The optical and structural properties of films deposited from laser sintered Zirconia (ZrO2), Hafnia (HfO2), and Yttria (Y2O3) and from the commercially available (unprocessed material) Zirconia, Hafnia and Yttria, were studied and compared. All the films had low absorption. Films deposited from the laser sintered material had very low optical inhomogeneity. ZrO2 films showed negative inhomogeneity for films deposited from the unprocessed material. The refractive index increased for ZrO2 films deposited from the laser sintered material. HfO2 and Y2O3 films showed positive inhomogeneity when deposited from the unprocessed material. The refractive index of the films of these materials decreased when deposited from the laser sintered material. The thin films of ZrO2 and Y2O3 prepared from laser sintered material had stable monoclinic and cubic structures respectively while HfO2 films were found to be amorphous.
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    URL: http://dx.doi.org/10.1007/BF00324335
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    TEM characterization of yttrium silicide layers synthesized by ion implantation (1992)
    Springer
    Applied physics 54 (1992), S. 527-532 
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    ISSN: 1432-0630
    Keywords: 61.10 ; 61.70 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The structure of Si implanted with high doses of yttrium has been investigated by varying implantation doses and energies. As implantation doses increase into the low 1017 cm−2 range, silicide precipitates form. The precipitates are thin and long and lie parallel to {111} planes in the Si matrix. As dopant concentrations increase, the precipitates themselves become more equiaxed, aspect ratios decrease, and precipitates densities increase until the precipitates coalesce to form a continuous buried layer of yttrium silicide within the Si matrix. The layer thickness is relatively uneven. As implant doses increase to ∼ 4×1017 cm−2, the layer thicknesses become more uniform although there are still defects present. As the implant doses increase further, the precipitate bands on either side of the continuous layer decrease due to gettering of yttrium to the layer. As the energy of the implant is increased, the appearance of the sample is similar to that of the lower energy implants except that the layer is buried deeper in the Si matrix. Observations of the silicide are consistent with its having the AlB2 structure with ordered vacancies on the Si sublattice.
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    URL: http://dx.doi.org/10.1007/BF00324334
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    Enhanced adhesion of metal films on PET after UV-laser treatment (1992)
    Springer
    Applied physics 55 (1992), S. 391-392 
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    ISSN: 1432-0630
    Keywords: 42.60 ; 61.40 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The adhesion-force of thin metal films on PET foils can be significantly improved by UV excimer-laser irradiation of the polymer surface prior to metal deposition. The laser fluences required are well below the ablation threshold.
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    URL: http://dx.doi.org/10.1007/BF00324090
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    Ion-beam-induced atomic transport and phase formation in the system nickel/antimony (1993)
    Springer
    Applied physics 57 (1993), S. 343-351 
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    ISSN: 1432-0630
    Keywords: 61.80 ; 68.35 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We report on the ion-beam mixing processes of Sb/Ni marker layers and bilayers under the irradiation of ions ranging from He to Pb, at 80 K and at room temperature. The concentration profiles are obtained by Rutherford backscattering spectroscopy with 900 keV α-particles. At 80 K, the bilayer mixing rates cannot be reproduced by purely ballistic mixing; the essentially linear scaling of the bilayer mixing rate with the energy F D deposited at the interface points to local spike formation. A transition to global spike formation seems to be visible for the Pb-irradiations. Additional mixing effects at 300 K are due to radiation enhanced diffusion and scale with √F D. The marker mixing rates at 80 K are reproduced by the ballistic mixing approach, but are equally well described by local spike models. High fluence Xe-irradiations of Sb/Ni bilayers lead to intermetallic phases in the interface region as verified by transmission electron microscopy.
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    URL: http://dx.doi.org/10.1007/BF00332288
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    In0.2Ga0.8As/GaAs interface revealed by an AlAs marker layer (1993)
    Springer
    Applied physics 57 (1993), S. 401-405 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 57.12
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A detailed analysis of the microstructure of layered semiconductor heterostructures is only possible if the interface between the various layers can be accurately located. Microstructural features whose characterisation is dependent on the location of the interface include the planarity and width of the layers, the composition profile and the geometry of misfit dislocations (in the particular case of lattice mismatched heterostructures). We report on an investigation to image, at high resolution in the transmission electron microscope, the interface in an In0.2Ga0.8As/GaAs structure grown by molecular beam epitaxy. The difficulty in locating the interface, due to similarity in electron optical behaviour of GaAs and In0.2Ga0.8As when imaged in a 〈110〉 direction, was overcome by incorporating into the structure a “marker layer” of AlAs two unit cells thick (11.4 Å in total) between the GaAs and the In0.2Ga0.8As layers. Lattice fringe images of an In0.2Ga0.8As/AlAs/GaAs structure are presented which show, at near atomic resolution, the location of the misfit dislocations relative to the In0.2Ga0.8As/GaAs interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331778
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  • 46
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    Photoelectric properties of Pb1−x−y Sn x Ge y Te:In epitaxial films (1993)
    Springer
    Applied physics 57 (1993), S. 567-572 
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    ISSN: 1432-0630
    Keywords: 42.80 ; 72.40 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Pb1−x−y Sn x Ge y Te:In epitaxial films are examined in a wide temperature interval and at various background fluxes. These films have high sensitivity to infrared radiation in the spectral range λ〈20μm. The lifetime depends exponentially on temperature and varies from several seconds at T=10 K to 10−2 s at T=20 K. The two-electron model of Jahn-Teller centers is proposed to explain the results. Multielement photoresistors based on these films are fabricated and D*=1.7×1013 cm Hz1/2 W−1 at T=25 K is achieved. Noise of the photoresistors is independent of background flux when it varies from 1012 cm−2 s−1 to 1018 cm−2 s−1. As compared with Si:Ga and Ge:Hg photoresistors, the responsitivity is several orders larger at the operating temperature 25–30 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331760
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  • 47
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    A 13C isotopic tracing study of a-C:H thin-film growth (1994)
    Springer
    Applied physics 58 (1994), S. 187-190 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 66.00 ; 81.15
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The growth mechanisms of amorphous carbon (a-C:H) thin films obtained by the decomposition of methane gas in a multipolar plasma set up were studied using 13C as a tracer. Hydrogenated carbon films first grown in a methane plasma with natural isotopic composition (12C) were further grown in highly enriched 13C methane discharge (experiments were also carried out with the reverse order). 13C profiles were obtained by resonant nuclear reaction depth profiling using the narrow (FWHM〈100 eV) resonance at 1747.6 keV, in the 13C(p, γ)14N nuclear reaction. Plasma conditions were varied so as to vary the energy of particles arriving at the sample surface from 30 eV to 500 eV. In all cases, a system of two layers was observed: a pure 13C film overlaying a pure 12C film (or the reverse order) with a rather sharp interface between the two layers. These results suggest layer by layer amorphous hydrogenated carbon film growth with minimal mixing or interdiffusion of the isotopic layers induced by the ionic bombardment during the growth.
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    URL: http://dx.doi.org/10.1007/BF00332177
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  • 48
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    Ultrathin-film hardness investigations by a modified atomic force microscope (1994)
    Springer
    Applied physics 59 (1994), S. 29-32 
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    ISSN: 1432-0630
    Keywords: 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We have modified an atomic force microscope in order to determine the hardness of ultrathin films (10 nm) typically used in modern magnetic thin-film disk media.
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    URL: http://dx.doi.org/10.1007/BF00348416
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  • 49
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    Evaluation of copper Chemical-Vapor-Deposition films on glass and Si(100) substrates (1994)
    Springer
    Applied physics 58 (1994), S. 607-613 
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    ISSN: 1432-0630
    Keywords: 81.15 ; 68.55 ; 07.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thin films of pure copper have been deposited on glass and Si(100) substrates using copper acetylacetonate [Cu(acac)2] and copper HexaFluoroAcetylacetonate [Cu(HFA)2] sources. A thermal, cold-wall, reduced pressure (3325–5985 Pa) Metal-Organic Chemical Vapor Deposition (MOCVD) process was employed. The effect of H2O vapor on the grain size, deposition rate, and resistivity was examined. Electrical resistivities of 2.4 μω cm for copper films deposited on Si(100) and 3.44 μω cm for copper films deposited on glass at substrate temperatures of 265° C and a [Cu(acac)2] source temperature of 147° C with the use of H2O vapor were measured. When [Cu(HFA)2] was used, the substrate temperature was 385° C and the source temperature was 85° C. An activation energy for the copper film deposition process was calculated to be 22.2 kJ/mol in the case of the [Cu(acac)2] source. A deposition rate of 11 nm/min was obtained with Cu(acac)2 as the source and the rate was 44.4 nm/min with the Cu(HFA)2 source; both were obtained with the use of H2O vapor. No selectivity was observed with either source for either substrate. The deposited films were fully characterized using XRD, LVSEM, SAXPS, and RBS.
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    URL: http://dx.doi.org/10.1007/BF00348173
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  • 50
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    Domain structures of phospholipid monolayer Langmuir-Blodgett films determined by atomic force microscopy (1994)
    Springer
    Applied physics 59 (1994), S. 139-143 
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    ISSN: 1432-0630
    Keywords: 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Atomic Force Microscopy (AFM) has been used to show the formation of solid-phase domains from fluid-phase domains on compression of DiPalmitoyl-PhosphatidylCholine (DPPC) monolayer Langmuir-Blodgett (LB) films. The chiral structures on the solid substrates were observed for the first time. By applying the friction force technique, we were able to distinguish the different regions of LB films according to their elastic properties. The influence of rates of compression on the domain shape as well as the microstructure within the domain were also studied.
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    URL: http://dx.doi.org/10.1007/BF00332206
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    Tungsten silicide formation by XeCl excimer-laser irradiation of W/Si samples (1993)
    Springer
    Applied physics 56 (1993), S. 391-396 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 79.20.D ; 82.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We report a study of the formation of tungsten silicide at the W-Si interface, induced by multipulse (up to 300 shots) XeCl excimer-laser irradiation of W(150 nm)/Si and W(500 nm)/Si samples. Laser fluences ranging from 0.6 to 1.8 J/cm2 were used. After laser treatment the samples were examined by different diagnostic techniques: Rutherford backscattering spectrometry, X-ray scattering, resistometry, and surface profilometry. Numerical computations of the evolution and depth profiles of the temperature in the samples as a consequence of a single 30 ns laser pulse were performed as well. The results indicate that it is possible to obtain a tungsten silicide layer at the W-Si interface at quite low fluences. The layer thickness increases with the number of laser pulses. Complete reaction of the 150 nm thick W film with silicon was obtained at the fluence of 1.2 J/cm2 between 30 and 100 laser pulses and at 1.5 J/cm2 after 30 laser pulses. The sheet resistance of these silicides was 5–10 Ω. At the used fluences for the 500 nm thick W film only the onset of silicide synthesis at the W-Si interface was observed.
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    URL: http://dx.doi.org/10.1007/BF00324361
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  • 52
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    Synthesis of n-type semiconducting diamond film using diphosphorus pentaoxide as the doping source (1990)
    Springer
    Applied physics 51 (1990), S. 344-346 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 73.60 ; 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An n-type semiconducting diamond film has been synthesized by the hot filament CVD method using diphosphorus pentaoxide as the doping source. The obtained film was identified as polycrystalline diamond containing few sp2 components by means of several methods including Raman spectroscopy. From measurements of the Hall effect and the Seebeck effect, the film was found to be an n-type semiconductor.
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  • 53
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    Effect of in situ post-deposition annealing on the formation of α-In2Se3 thin films grown by elemental evaporation (1992)
    Springer
    Applied physics 54 (1992), S. 293-299 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 73.60F ; 78.65J ; 81.15E
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Stoichiometric polycrystalline In2Se3 thin films have been grown by elemental evaporation on both glass and quartz substrates. The compositions are examined by DAN fluorimetry and X-ray photoelectron spectroscopy (XPS). Structure of the films are characterized by X-ray diffraction. The structure of this α-form of thin films have been determined to be hexagonal. Optimization of the preparative conditions employed for elemental evaporation, helped in preparing monophasic films by the suppression of other phases to a very minor extent. Influence of annealing conditions on the stoichiometry of the films are investigated in detail.
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    Aluminium diffusion in titanium nitride films. Efficiency of TiN barrier layers (1993)
    Springer
    Applied physics 57 (1993), S. 195-197 
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    ISSN: 1432-0630
    Keywords: 66.30 ; 68.35 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Two kinds of reactively evaporated titanium nitride films with columnar (B 0 films) and fine-grained (B + films) film structures, respectively, have been examined as diffusion barriers for preventing aluminium diffusion. The aluminium diffusion profiles have been investigated by 2 MeV 4He+ Rutherford backscattering spectrometry (RBS) at temperatures up to 550° C. The diffusivity from 300° C to 550° C is: D[m2s−1]=3×10−18 exp[−30/(RT)] in B 0 layers and D[m2s−1]=1.4×10−16 exp[−48/(RT)] in B + TiN layers. The activation-energy values determined indicate a grain boundary diffusion mechanism. The difference between the diffusion values is determined implicitly by the microstructure of the layers. Thus, the porous B 0 layers contain a considerable amount of oxygen absorbed in the intercolumnar voids and distributed throughout the film thickness. As found by AES depth profiling, this oxygen supply allows the formation of Al2O3 during annealing the latter preventing the subsequent diffusion of the aluminium atoms.
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  • 55
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    Quantitative characterization of AlAs/GaAs interfaces by high-resolution transmission electron microscopy along the 〈100〉 and the 〈110〉 projection (1993)
    Springer
    Applied physics 57 (1993), S. 393-400 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 68.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The interface microstructure of AlAs/GaAs quantum wells grown by molecular beam epitaxy (MBE) was investigated by transmission electron microscopy (TEM). High-resolution transmission electron microscopy (HRTEM) yields information about the width of the chemical transition between the binary components and about the lateral step distances along the interface. The chemical composition is quantitatively determined by the application of a pattern recognition procedure based on the Fourier transformation of image unit cells. Along the 〈100〉 zone axis the composition across the interfaces is obtained with a precision of ±10 atomic percent and with a spatial resolution of 0.28 nm. Despite a lower chemical sensitivity a quantitative chemical analysis was also carried out for images along the 〈110〉 projection.
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    URL: http://dx.doi.org/10.1007/BF00331777
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    Atomic-resolution imaging and spectroscopy of semiconductor interfaces (1993)
    Springer
    Applied physics 57 (1993), S. 385-391 
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    ISSN: 1432-0630
    Keywords: 61.14 ; 68.48 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Incoherent Z-contrast imaging uses a high-angle annular detector to collect only highly local, incoherently generated scattering with the result that images become dependent on intensities, not phases. No model structures are required for a first-order structure determination, and the images remain intuitively interpretable even at interfaces. Under suitable conditions, incoherently generated inelastic scattering may be collected simultaneously with a large-aperture axial spectrometer, and, by using the Z-contrast image to locate the scanning transmission electron microscope (STEM) probe over selected atomic columns, can provide an atomic-resolution chemical analysis. This is demonstrated with reference to an epitaxial CoSi2/Si(100) interface, achieving a 2.7 Å spatial resolution. Recent insights into the growth and relaxation of strained Si-Ge epitaxial films are described, highlighting the role of stress concentrations, and contrasting the case of a free surface with that of a surface constrained by an oxide layer.
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  • 57
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    Surface structure of β-FeSi2(101) epitaxially grown on Si(111) (1993)
    Springer
    Applied physics 57 (1993), S. 477-482 
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    ISSN: 1432-0630
    Keywords: 68.35 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The surface morphology and structure of β-FeSi2(101) films epitaxially grown on Si(111) has been studied by means of Scanning Tunneling Microscopy (STM). The films are formed by large crystallites which are single domain. Each crystallite has only one of the three possible azimuthal orientations with respect to the substrate. A large density of planar defects, however, is detected on top of each crystallite. They are assigned to intrinsic stacking faults and their existence seems hard to avoid. This high density of intrinsic defects casts serious doubts on the use of β-FeSi2 as an optoelectronic material.
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    URL: http://dx.doi.org/10.1007/BF00331745
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    Deposition and characterization of diamond epitaxial thin films on silicon substrates (1993)
    Springer
    Applied physics 57 (1993), S. 483-489 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 81.15 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Heteroepitaxial diamond growth has been attempted on mirror-polished monocrystalline (001), (111), and (110) silicon substrates by microwave plasma CVD. The surface morphology and the crystallographic properties of the films were characterized by means of Scanning Electron Microscopy (SEM), Raman spectroscopy, X-ray diffraction, and X-ray and Raman pole-figure analysis. The results demonstrate epitaxial growth of diamond on both (001) and (111) oriented silicon substrates. Preliminary results give strong evidence for substrate-induced orientation of the diamond crystallites also on (110) oriented silicon substrate. The heteroepitaxy can be assigned to the oriented covalent bonding across the interface between diamond and silicon.
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    Characterization of SIPOS films by spectroscopic ellipsometry and transmission electron microscopy (1994)
    Springer
    Applied physics 58 (1994), S. 77-80 
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    ISSN: 1432-0630
    Keywords: 07.65 ; 07.80 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The structural and compositional properties of undoped SIPOS thin films have been studied by spectroscopic ellipsometry and transmission electron microscopy. It is shown that in most cases the former method provides fast and reliable results. The growth rate and crystallinity of SIPOS layers are studied as a function of N2O concentration in the gas phase and annealing temperature.
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    Improvement of corrosion resistance of carbon steel using chemical vapor deposition from the mixture of Mo(CO)6 and Cr(CO)6 with an ArF-excimer laser (1994)
    Springer
    Applied physics 58 (1994), S. 99-105 
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    ISSN: 1432-0630
    Keywords: 81.15 ; 81.60 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The corrosion resistance of carbon steel has been improved by the deposition from the mixture of Mo(CO)6 and Cr(CO)6 as well as from each carbonyl alone with an ArF-excimer laser (193 nm). The corrosion resistance attained by coating with the films from the mixture is higher than from Mo(CO)6 alone, while lower than from Cr(CO)6 alone. While the corrosion resistance increases with beam intensity monotonically over the range 4–25 MW cm−2 for the deposition from Cr(CO)6 alone, it tends to decrease slightly above 15 MW cm−2 for the deposition from Mo(CO)6 alone and from the mixture. SEM (Scanning Electron Microscope) photographs show that the films from each carbonyl and their mixture consist of small grains that are more densely packed at higher beam intensities. The comparison of the film thickness evaluated from sputtering time to remove the films with that from direct observation with SEM suggests that the density of the film increases with beam intensity. In the films deposited from the mixture, molybdenum is preferentially incorporated from the gas phase.
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    A simple estimate of deposited energy and concentration profiles in films produced by Ion-Assisted Physical Vapour Deposition (1994)
    Springer
    Applied physics 58 (1994), S. 619-622 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 81.15 ; 81.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Analytical expressions for estimating the energy dissipation and the film constituent concentration profiles in films grown by Ion-Assisted Physical Vapour Deposition (IA PVD) are given. Two cases of IA PVD are considered: ion-assistance performed by inert-gas ions as well as by ions of a film constituent. As an example of application, concentration and damage depth profiles in h-BN films grown by IA PVD are calculated and a comparison is made with results obtained by computer simulation.
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  • 62
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    Observation of the early stages of growth and the formation of growth spirals in epitaxial YBa2Cu3O7-δ thin films by AFM (1994)
    Springer
    Applied physics 59 (1994), S. 49-56 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 61.70 ; 74.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ultrathin epitaxial films of YBa2Cu3O7−δ on SrTiO3 prepared by Direct Current (DC) sputtering and pulsed laser deposition were imaged by Atomic Force Microscopy (AFM) to follow the different stages of growth of the thin films. Series of films with thicknesses between 1.2 nm and 12 nm (1–10 monolayers of YBa2Cu3O7−δ) were prepared under identical conditions, optimized with respect to electrical and structural properties, to obtain information on the mechanisms responsible for the formation of growth spirals which are commonly observed in films having a thickness of several 10 nm or more. It could be shown that few layers are formed by a layered growth mode where material is attached laterally to 2D islands which are only one c-axis unit cell in height. In a later stage of growth when about 8–10 layers have been formed, the growth process changes to a mode which is mediated by growth spirals. This could be directly monitored in the AFM images where different defect structures like vertically sheared growth fronts and dendrite-like terraces of stacked islands as well as the resulting growth spirals could be identified.
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    Laser and thermal processing for Ti:LiNbO3 waveguide fabrication (1993)
    Springer
    Applied physics 56 (1993), S. 349-351 
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    ISSN: 1432-0630
    Keywords: 42.80 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ti diffusion into LiNbO3 single crystal was studied as a result of Ruby laser irradiation of a metallic Ti thin film covering the crystal surface and subsequent thermal processing in a furnace. Different regimes of irradiation and heating were used. SIMS analysis was employed for investigation of the treatment. The combined method used proved to be able to form waveguides of 3–4 μm thickness.
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    p-Type doping of diamond films with a novel organoboron source (1993)
    Springer
    Applied physics 56 (1993), S. 425-428 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 72.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract p-Type polycrystalline diamond films were prepared by hot-filament CVD method using a liquid cyclic organic borinate ester as the doping source. The obtained films were identified as diamond films by means of SEM and Raman spectroscopy. The resistivity of the doped films can be adjusted by changing the temperature of the boron source.
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  • 65
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    Raman spectroscopy of macroscopic defects of GaAs grown by molecular beam epitaxy (1993)
    Springer
    Applied physics 56 (1993), S. 571-574 
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    ISSN: 1432-0630
    Keywords: 78.30 ; 68.55 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Macroscopic defects of the GaAs surface grown by molecular beam epitaxy (MBE) have been investigated by using a micro-probing method of Raman spectroscopy. Especially, the oval defects, the most common macroscopic defects in MBE GaAs, were focused in this study. In Raman spectroscopy for the oval defect on the (100)GaAs surface, TO phonon mode of the 269 cm−1 peak was observed. This indicates that the oval defects can include the (111) growth direction or the amorphized surface. The TO/LO intensity ratios for the defects are in the range from 0.3 to 1.0. In the sample grown under the condition that the substrate temperature is 580° C with the As/Ga ratio of 20, the density of the oval defects is about 200 cm−2 at a growth thickness of 5 μm. With increasing thickness of the epilayer, the density and the size of the α-tye oval defect increased, while the TO/LO ratio decreased. From the spatial measurement by Raman spectroscopy for the α-type oval defect, it is supposed that the α-type oval defect remains in a rather good crystalline state and its orientation along the (100) growth direction is much closer to the (111) direction, but the growth direction of the defect might tend toward the (100) direction with a thicker layer.
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    Transport coefficients of argon, nitrogen, oxygen, argon-nitrogen, and argon-oxygen plasmas (1994)
    Springer
    Plasma chemistry and plasma processing 14 (1994), S. 451-490 
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    ISSN: 1572-8986
    Keywords: Transport coefficients ; transport properties ; viscosity ; thermal conductivity ; electrical conductivity ; diffusion coefficient ; Chapman Enskog method ; argon ; nitrogen ; oxygen ; plasma
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Calculated values of the viscosity, thermal conductivity, and electrical conductivity of argon, nitrogen, and oxygen plasmas, and mixtures of argon anti nitrogen and of argon anti oxygen, are presented. In addition, combined ordinary, pressure, and thermal diffusion coefficients are given for the gas mixtures. These three combined diffusion coefficients fully describe di fusion of the two gases, irrespective of their degree of dissociation or ionizati on. The calculations, which assume local thermodynamic equilibrium, are performed! for atmospheric-pressure plasmas in the temperature range /torn 300 to 30,000 K. A number of the collision integrals used in calculating the transport coefficients are significantly more accurate than values used in previous theoretical studies, resulting in more reliable values of the transport coefficients. The results are compared with those of published theoretical and experimental studies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01570207
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    Mercury dynamics in young Common Tern (Sterna hirundo) chicks from a polluted environment (1993)
    Springer
    Ecotoxicology 2 (1993), S. 33-40 
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    ISSN: 1573-3017
    Keywords: mercury ; body distribution ; feather concentrations ; body burden ; tern chicks
    Source: Springer Online Journal Archives 1860-2000
    Topics: Energy, Environment Protection, Nuclear Power Engineering
    Notes: We studied mercury concentrations and amounts in tissues of 19 starved young Common Tern chicks (median age 4 days) and in eggs from the same colony. Concentrations and burden were similar between eggs and newly hatched chicks. Mercury concentrations were highest in down, which contained at least 38% of the body mercury. The mercury burden of the whole body and of the tissues as well as the concentration in down increased with age and body mass, indicating the importance of down as an elimination pathway. Conversion ratios between mercury concentrations in tissues and the whole chick body varied according to the contamination level.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00058212
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    Seasonal and spatial patterns of S, Ca, and N dynamics of a Northern Hardwood forest ecosystem (1992)
    Springer
    Biodegradation 17 (1992), S. 165-189 
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    ISSN: 1572-9729
    Keywords: calcium ; fine roots ; nitrogen ; northern hardwood ; nutrient dynamics ; seasonality ; soils ; sulfur ; vegetation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Energy, Environment Protection, Nuclear Power Engineering , Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Abstract Seasonal dynamics of S, Ca and N were examined at the Huntington Forest, a northern hardwood ecosystem in the central Adirondacks of New York for a period of 34 months (1985–1988). Solute concentrations and fluxes in bulk precipitation, throughfall (TF) and leachates from the forest floor, E horizon and B horizon were quantified. Both above and below-ground elemental fluxes mediated by vegetation (e.g. uptake, litter inputs, and fine roots production) were also determined. The roles of abiotic and biotic processes were ascertained based on both changes in solute concentrations through the strata of the ecosystem as well as differences between dormant and growing seasons. Concentrations of SO4 2−, NO3 −, NH4 + and Ca2+ were greater in TF than precipitation. Forest floor leachates had greater concentrations of SO4 2−, NO3 − + NH4 + and Ca2+ (9, 6 and 77 µeq L−1, respectively) than TF. There were differences in concentrations of ions in leachates from the forest floor between the dormant and growing seasons presumably due to vegetation uptake and microbial immobilization. Concentrations and fluxes of NO3 − and NH; were greatest in early spring followed by a rapid decline which coincided with a demand for N by vegetation in late spring. Vegetation uptake (44.7 kg N ha−1 yr−1 ) could account for the low leaching rates of N03 −. Within the mineral soil, changes with soil depth and the absence of seasonal patterns suggest that cation exchange (Ca+) or anion sorption (SO4 2−) are primarily responsible for regulating solute concentrations. The increase in SO4 2− concentration after leachates passed through the mineral soil may be attributed to desorption of sulfate that was adsorbed during an earlier period when SO4 2− concentrations would have been greater due to elevated S inputs.
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    URL: http://dx.doi.org/10.1007/BF00004040
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    Nitrogen mass balances and denitrification rates in central Ontario Lakes (1993)
    Springer
    Biodegradation 20 (1993), S. 195-212 
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    ISSN: 1572-9729
    Keywords: denitrification ; lake ; mass balance ; nitrogen
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Energy, Environment Protection, Nuclear Power Engineering , Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Abstract Nitrogen mass balances for seven unproductive lakes and 20 forested catchments in central Ontario were measured between 1977 and 1989. Average annual lake denitrification rates calculated with the N/P ratio method were strongly correlated with summer anoxic factor (extent of surficial sediment anoxia) whereas denitrification rates calculated with a210Pb sediment N accumulation method were poorly correlated with the anoxic factor suggesting that the N/P method is superior. Substantial denitrification occurred in all lakes — an average of 36% of TN inputs or 75% of the net gain. On a regional area-weighted basis, 67% of bulk atmospheric TN deposition was stored or denitrified terrestrially, 12% was denitrified in lakes, 4% was stored in lake sediments, and 17% was exported from lakes. N/P ratios were generally less in streams than in precipitation suggesting preferential N retention in catchments, whereas the N/P ratios in lake outputs were slightly higher than lake input ratios, suggesting preferential P retention in lakes. This is consistent with the notion that P-limited lakes can exist adjacent to N-limited forests.
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    URL: http://dx.doi.org/10.1007/BF00000787
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    Synthesis of aluminum nitride in transferred arc plasma furnaces (1993)
    Springer
    Plasma chemistry and plasma processing 13 (1993), S. 613-632 
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    ISSN: 1572-8986
    Keywords: Aluminum nitride ; aluminum ; nitrogen ; hydrogen ; ammonia ; thermal plasma ; transferred plasma ; emission spectroscopy ; sintering ; ultrafine powder ; nanophase ; composite
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Ultrafine particles of aluminum tnitride (AIN) arc produced by a transferred an plasma. Two devices are used: a transferred arc plasma on aluminum natal in nitrogen or nitrogenlammonia atmospheres, and a item concept of transferred arc plasma when, DC anode and cathode ares are coupled together above an alumintun melt. Equilibrium chemical compositions mere calculated. The temperature distributions in the plasma are measured hr emission spectroscopy Flit, powder, made from 99.8%, aluminum ingot, it as analyzed and confirmed to be 99.3%, of hexagonal phase aluminum nitride. In othertests, from 99.99% aluminum ingot, a translucent AIN vinter was obtained. The densification behavior was assessed by hot pressing and by pressureless sintering, with and without additives. The thermal conductivities are given.
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    URL: http://dx.doi.org/10.1007/BF01570134
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    Nitrogen inputs to a marine embayment: the importance of groundwater (1990)
    Springer
    Biodegradation 10 (1990), S. 309-328 
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    ISSN: 1572-9729
    Keywords: estuaries ; groundwater ; nitrogen ; nitrogen cycle ; nitrogen loading
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Energy, Environment Protection, Nuclear Power Engineering , Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Abstract We examined the importance of nitrogen inputs from groundwater and runoff in a small coastal marine cove on Cape Cod, MA, USA. We evaluated groundwater inputs by three different methods: a water budget, assuming discharge equals recharge; direct measurements of discharge using bell jars; and a budget of water and salt at the mouth of the Cove over several tidal cycles. The lowest estimates were obtained by using a water budget and the highest estimates were obtained using a budget of water and salt at the Cove mouth. Overall there was more than a five fold difference in the freshwater inputs calculated by using these methods. Nitrogen in groundwater appears to be largely derived from on site septic systems. Average nitrate concentrations were highest in the region where building density was greatest. Nitrate in groundwater appeared to behave conservatively in sandy sediments where groundwater flow rates were high (〉 11/m2/h), indicating that denitrification was not substantially reducing external nitrogen loading to the Cove. Nitrogen inputs from groundwater were approximately 300 mmol-N/m3/y of Cove water. Road runoff contributed an additional 60 mmol/m3/y. Total nitrogen inputs from groundwater and road runoff to this cove were similar in magnitude to river dominated estuaries in urbanized areas in the United States.
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    URL: http://dx.doi.org/10.1007/BF00003150
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    The role of eggs in mercury excretion by Quail Coturnix coturnix and the implications for monitoring mercury pollution by analysis of feathers (1993)
    Springer
    Ecotoxicology 2 (1993), S. 55-64 
    Details
    ISSN: 1573-3017
    Keywords: mercury ; eggs ; feathers ; quail ; dose-response
    Source: Springer Online Journal Archives 1860-2000
    Topics: Energy, Environment Protection, Nuclear Power Engineering
    Notes: This paper describes differences in the excretion of methyl mercury between male and female Quail Coturnix coturnix after a single dose. Since feathers are often used to monitor mercury pollution it is important to take into account biases in feather mercury levels that may arise as a result of mercury loss through egg-laying. Evidence is presented to support the use of bird eggs to sample for environmental mercury contamination. Birds were monitored up to twelve weeks after administration. Mercury concentrations in the kidney exceeded those in the liver which exceeded those in the pectoral muscle. Significant differences in mercury levels between male and female birds were found up to eight weeks after administration. Mercury was initially distributed through most of the internal tissues and was lost relatively slowly in a negative exponential manner. Mercury loss through excretion differed between the sexes for the first eight weeks after mercury administration. Initial mercury concentration in eggs was 3.5 μg g-1 but no mercury was detected in eggs five weeks after the dose was administered. At this point over 40% of the females' intake had been lost into the eggs.
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    URL: http://dx.doi.org/10.1007/BF00058214
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    Food chain transfer and potential renal toxicity of mercury to small mammals at a contaminated terrestrial field site (1993)
    Springer
    Ecotoxicology 2 (1993), S. 243-256 
    Details
    ISSN: 1573-3017
    Keywords: mercury ; small mammals ; bioaccumulation ; tissue residues ; toxicity
    Source: Springer Online Journal Archives 1860-2000
    Topics: Energy, Environment Protection, Nuclear Power Engineering
    Notes: Abstract Mercury concentrations were determined in surface soil and biota at a contaminated terrestrial field site and were used to calculate transfer coefficients of mercury through various compartments of the ecosystem based on trophic relationships. Mercury concentrations in all compartments (soil, vegetation, invertebrates, and small mammals) were higher than mercury concentrations in corresponding samples at local reference sites. Nonetheless, mercury concentrations in biota did not exceed concentrations in the contaminated surface soil, which averaged 269 μg g-1. Plant tissue concentrations of mercury were low (0.01 to 2.0 μg g-1) and yielded soil to plant transfer coefficients ranging from 3.7×10-5 for seeds to 7.0×10-3 for grass blades. Mercury concentrations in invertebrates ranged from 0.79 for harvestmen (Phalangida) to 15.5 μg g-1 for undepurated earthworms (Oligochaeta). Mean food chain transfer coefficients for invertebrates were 0.88 for herbivores/omnivores and 2.35 for carnivores. Mean mercury concentrations in target tissue (kidney) were 1.16±1.16 μg g-1 for the white-footed mouse (Peromyscus leucopus), a granivore, and 38.8±24.6 μg g-1 for the shorttail shrew (Blarina brevicauda), an insectivore. Transfer coefficients for diet to kidney were 0.75 and 4.40 for P. leucopus and B. brevicauda, respectively. A comparison of kidney mercury residues measured in this study with values from controlled laboratory feeding studies from the literature indicate that B. brevicauda but not P. leucopus may be ingesting mercury at levels that are nephrotoxic.
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    URL: http://dx.doi.org/10.1007/BF00368533
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