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  • 1
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    Low-Energy Electron Emission in Fast Au53+ ? Atom Collisions (2001)
    Institute of Physics
    Details
    Publication Date: 2001-01-01
    Print ISSN: 0031-8949
    Electronic ISSN: 1402-4896
    Topics: Physics
    Published by Institute of Physics
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    PAPER CURRENT
  • 2
    Electronic Resource
    Electronic Resource
    Spatial coherence measurements and x-ray holographic imaging using a laser-generated plasma x-ray source in the water window spectral region (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8081-8087 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The properties of a coherent x-ray point source in the water window spectral region generated using a small commercially available KrF laser system focused onto a Mylar (essentially carbon) target have been measured. By operating the source in a low-pressure (approximately 20 Torr) nitrogen environment, the degree of monochromaticity was improved due to the nitrogen acting as an x-ray filter and relatively enhancing the radiation at a wavelength of 3.37 nm (C vi 1s-2p). X-ray pinhole camera images show a minimum source size of 12 μm. A Young's double slit coherence measurement gave fringe visibilities of approximately 62% for a slit separation of 10.5 μm at a distance of 31.7 cm from the source. To demonstrate the viability of the laser plasma as a source for coherent imaging applications a Gabor (in-line) hologram of two carbon fibers, of different sizes, was produced. The exposure time and the repetition rate was 2 min and 10 Hz, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353924
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  • 3
    Electronic Resource
    Electronic Resource
    Coulomb energy of traps in semiconductor space-charge regions (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2649-2657 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Large Coulomb barriers exceeding ΔE≈250 meV are estimated for capture and emission rates of trap centers in semiconductor space-charge regions. Depending on the charge state of the trap, the capture rate or both the capture and emission rates are activated or deactivated, respectively. The Coulomb energy raises the equilibrium energy state of a trap center that is repulsively charged when occupied. Quantitative agreement of the calculated Coulomb energy is obtained with trapping rates for single individual interface traps in metal-oxide-semiconductor (MOS) structures measured by random telegraph signals. The Coulomb barrier is reduced in MOS capacitors by partial screening due to mobile charge carriers in the inversion channel. The Coulomb energy can be externally controlled in MOS structures by the gate bias voltage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354656
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  • 4
    Electronic Resource
    Electronic Resource
    Influence of stochastic environments of Gaussian chains on dynamic shear and bulk properties (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 2772-2776 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A theory of dynamic bulk and shear viscosity in polymer systems is presented. To overcome the neglect due to the preaveraged hydrodynamic interaction in the theory of dynamic viscoelastic properties of polymers, a perturbation term, which includes the influence of external environments coupled to the velocity field, was introduced in the dynamic equation. The influence of this additional perturbation term to both dynamic bulk and shear properties was studied. This nonthermodynamic contribution modifies the Rouse spectrum. It was shown that the relaxation time spectrum is the same for the dynamic bulk ηV and shear viscosity ηS, whereas the ratio between the both quantities was found to exceed the value ηV/ηS=2/3 for pure viscous drag. The theoretical results are compared with experimental data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.463068
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  • 5
    Electronic Resource
    Electronic Resource
    A simple method analyzing 2H nuclear magnetic resonance line shapes to determine the activation energy distribution of mobile guest molecules in disordered systems (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 5847-5855 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We investigated the 2H nuclear magnetic resonance (NMR) line shape of deuterated benzene and hexamethylbenzene as guest molecules in organic glasses in the temperature range of 10–150 K. A broad distribution G(ln τ) of correlation times determines the slowing down of the molecular reorientation around the sixfold symmetry axis of the guests. The line shape is described by a superposition of temperature-dependent fractions F(T) of only two subspectra corresponding to fast and slowly rotating molecules; no spectra characteristic for intermediate mobility as found in crystal matrices are observed. Assuming a thermally activated motional process, the temperature dependence of G(ln τ) comes from a temperature-independent distribution of activation energies g(E). In this case, the derivative of the fraction dF(T)/dT yields directly the distribution g(E). Using this method an asymmetric distribution g(E) with its maximum at the low energy side is found for the glasses. While the general shape of g(E) is similar for different matrices, the mean activation energy differs significantly. We used the same approach to discuss similar "two-phase'' spectra for the isotropic reorientation of toluene in polystyrene below the glass transition of the mixed system. Here, an alternative explanation is offered considering a distribution of glass transition points Tg for the dynamics of toluene in the mixed system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.458354
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  • 6
    Electronic Resource
    Electronic Resource
    Monte Carlo studies of polymer network formation (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 96 (1992), S. 7102-7107 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We are presenting a lattice Monte Carlo study of the formation of polymer networks using the bond fluctuating method. Starting from a pure polymer melt (chain length N=50, density Φ=0.3) and two component polymer mixtures (A:B=1:1), we get simple two component or interpenetrated polymer networks. The time evolution of the building process, the static structure factor, and the topology of the network are presented in dependence of the cross-link density.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.462543
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  • 7
    Electronic Resource
    Electronic Resource
    Effects of critical fluctuation in the theory of microphase separation in symmetric systems (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 98 (1993), S. 6558-6560 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We consider the effects of critical fluctuations in systems, which are undergoing microphase separations, such as diblock copolymers and interpenetrating networks. We predict the critical regime which, governed by the elastic constant C0, prevents the system from global separation. We obtain that in two dimensions there is no narrowing of the critical fluctuations for large degrees of polymerization studied within the field theoretic renormalization group. The scattering function S(p) in the homogeneous phase is obtained to behave as (∂[p2S−1(p)]/∂p2)p→0 (approximately-equal-to)m0 p*(γ−1/ν), where γ and ν are the critical exponents and p*=2π/λ with λ being the dimension of the microphase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.464795
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  • 8
    Electronic Resource
    Electronic Resource
    Scanning x-ray microscopy using a laser-plasma source (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 1478-1482 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Previously high-resolution soft x-ray microscopy has only been possible with synchrotron sources. Here, the first successful attempts at using a scanning transmission x-ray microscope with a laser-plasma source are reported. Spatial resolutions were limited to about 650 nm by electrical noise in the detector, but single shot per pixel images were obtained of test and real specimens. The microscope was not optimized to the source since it was designed for use on the undulator beam line of a synchrotron. With an improved system, it is demonstrated that single shot per pixel imaging at high resolution (better than 50 nm) will routinely be possible.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144067
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  • 9
    Electronic Resource
    Electronic Resource
    Evaluation of the Coulomb energy for single-electron interface trapping in sub-μm metal-oxide-semiconductor field-effect transistors (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2970-2979 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Capture and emission time constants are measured for a set of individual interface traps in different metal-oxide-semiconductor field-effect transistors (MOSFETs) by random telegraph signals. The data are evaluated to extract the Coulomb energy induced by the transfer of a single electron into an interface trap. A unified Coulomb energy of the order of several hundred millivolts independent of trap-specific properties is found, which is proportional to temperature and decays logarithmically with inversion carrier density in the MOSFET channel. The Coulomb energy found is in quantitative agreement with the theoretical modeling. The Coulomb effect is large compared to the trap lowering by the electric field and to the residual entropy change.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356194
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  • 10
    Electronic Resource
    Electronic Resource
    Conductance modulation of submicrometer metal–oxide–semiconductor field-effect transistors by single-electron trapping (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4178-4186 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The capture and emission of electrons at single, individual interface traps is studied in sub-μm metal–oxide–semiconductor field-effect transistors (MOSFETs) by the random telegraph signals (RTSs) they induce by source-drain conductance modulations. The magnitude of the RTSs observed frequently exceeds 10% of the channel conductance and it exhibits a large scatter over two orders of magnitude. Analytical estimates and computer modeling show that the magnitude of the RTSs and the scatter cannot occur for a uniform MOSFET channel. It is concluded that fixed oxide and interface charge centers, which are present in the active device area at a high concentration, cause a percolating current distribution in the channel. The lucky trap centers located close to current paths give rise to large RTSs. The scatter in the magnitude of the RTSs is due to the random location of traps in the percolation pattern. Trapping centers causing RTSs thus act as atomic probes of the nonuniform current distribution in the channel. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361785
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