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  • 1
    Electronic Resource
    Electronic Resource
    Material Processing with Broad-Beam Ion Sources (1983)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Materials Research 13 (1983), S. 413-439 
    Details
    ISSN: 0084-6600
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.ms.13.080183.002213
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  • 2
    Electronic Resource
    Electronic Resource
    Measured radial and angular distributions of sputtered atoms in a planar magnetron discharge (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3611-3618 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of current, voltage, and magnetic field on the radial profile of ions sputtering a flat cathode has been studied in a hollow cathode enhanced magnetron discharge. The measurements of sputtering rate were made using a directional quartz crystal microbalance, translated parallel to the cathode. We find the radial sputtering profiles are determined by the plasma sheath thickness, which can be calculated using the Child–Langmuir law for collisionless space-charge limited current flow. A hollow cathode electron source was used to control the sheath thickness by increasing the current to the magnetron cathode at a given voltage and constant pressure (0.07 Pa). Uniformity of the radial profiles increases with decreasing sheath thickness (i.e., at lower voltages and higher current densities). The angular distribution of sputtered atoms was measured by changing the polar angle of the microbalance. The angular distributions are asymmetric on either side of the radial position where the ion current density to the cathode is maximum. We believe this is due to ions which impact the cathode at angles up to ≈10° from the normal, having been radially accelerated away from the position of maximum plasma density.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356073
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  • 3
    Electronic Resource
    Electronic Resource
    Measurement of thermal stress and stress relaxation in confined metal lines. II. Stress relaxation study (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1725-1730 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The bending beam technique and stress analysis developed for stress measurements of fine line structures have been applied to investigate stress relaxation in confined Al (2 at. % Cu) line structures on a Si substrate. The observed relaxation of the line structure is compared with corresponding unpassivated and passivated layered film structures. The overall behavior of all structure is similar, showing an initial plastic deformation, then a fast relaxation in sequence with a log(time) slow relaxation. The kinetics of these relaxation processes are found to decrease due to the presence of the passivation and a higher degree of dielectric layer confinement. In addition, the relaxation behavior of the principal stress components of the line structure is anisotropic and does not vary monotonically with the annealing temperature. The results are attributed to the relaxation mechanism and interaction at the metal/dielectric interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355327
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  • 4
    Electronic Resource
    Electronic Resource
    Measurement of thermal stress and stress relaxation in confined metal lines. I. Stresses during thermal cycling (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1716-1724 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method based on the bending beam technique has been developed to measure the thermal stresses of fine lines confined by a dielectric layer. This method has been employed to determine the thermal stress of Al (2 at. % Cu) lines passivated by a SiO2 overlayer between room temperature and 400 °C. The effect of quartz confinement was analyzed by matching the thermal displacement at the metal/passivation interfaces and by imposing a mechanical equilibrium condition on the structure. The analysis enables us to deduce the triaxial stress components of metal and passivation from measurements of the substrate bending parallel and perpendicular to the length direction of the lines. Results of the measurements show a substantial stress enhancement as a result of the confinement, with the stress level significantly higher than that of a passivated blanket film. Parameters that influence the magnitude of the stress components are line geometry, layer deposition conditions, and the extent of plastic deformation during thermal cycling. Results of the measurements are consistent with those determined using x-ray techniques.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354826
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  • 5
    Electronic Resource
    Electronic Resource
    Superconductivity in Bi-Sr-Ca-Cu-O (invited) (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 5792-5796 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the structure and superconducting properties of a single phase polycrystalline composition given by Bi2.2Sr1.7Ca1.2Cu2O8+δ as well as measurements on single crystals. X-ray and electron diffraction analyses of both single-crystal and single phase materials show an incommensurately modulated orthorhombic superlattice, derivable from a pseudotetragonal substructure. The various compositions have the common feature that the major portion of the superconductivity disappears above 85 K but there is a small tail in the diamagnetic susceptibility extending to 110 K, above which the sample becomes paramagnetic. Single crystals, grown by the flux method, exhibit the same incommensurately modulated pseudotetragonal structure as the ceramic, but show a higher diamagnetic shielding and in some cases also have tails. The critical currents in the (ab) plane are only about one-fifth of the value found for YBa2Cu3O7 crystals and the anisotropy is smaller. These reduced values may be an intrinsic property of the modulated superlattice but more likely are due to stacking faults and other defects in the crystals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342207
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  • 6
    Electronic Resource
    Electronic Resource
    Synthesis of compound thin films by dual ion beam deposition. I. Experimental approach (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 550-555 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The synthesis of compound thin films by dual ion beam deposition is described. In Part I of this two-part paper, the experimental approach is presented, together with an analysis of composition for the aluminum-nitrogen system. In the accompanying paper (Part II), the properties of Al-N films are described. The dual beam technique supplies a deposition flux of Al from Ar+ ion beam sputtering of an Al target. Simultaneously, a low-energy (100–500 eV) N+2 ion beam bombards the growing film. Using a measured ion beam gradient across the substrate holder, a wide range of arrival rate ratios (0≤N/Al≤1.6) is obtained in each deposition run, producing a composition range of (0.1≤N/Al≤1.0). The film composition varies linearly with N arrival flux and saturates at the composition of stoichiometric AlN. The incorporation probabilities of Al and N are close to unity for N/Al≈0, and decrease to 0.7 at N/Al=1.0. Preferential sputtering of Al occurs for N/Al〈1, with ejection of excess N for N/Al〉1. We discuss the accuracy of this technique in establishing quantitative deposition parameters for compound and composite thin films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335661
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  • 7
    Electronic Resource
    Electronic Resource
    Synthesis of compound thin films by dual ion beam deposition. II. Properties of aluminum-nitrogen films (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 556-563 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe the properties of aluminum-nitrogen films prepared by dual ion beam deposition in which the metal atom flux is supplied by inert ion beam sputtering and the reactive flux is supplied by a low-energy (100–500 eV) ion beam directed at the growing film. This deposition technique and the analysis of film compositions are described in Part I of this two-part paper.The fundamental deposition parameters of arrival rates and ion energy are controlled and directly correlated to the crystallographic structure, microstructure, and morphology of the films, over a range of composition from N/Al=0 to N/Al=1.0. Al sputter deposited in a mixture of Ar and N2 forms an expanded Al lattice with no indications of AlN formation. When the low-energy N+2 beam is turned on, almost all the ionized nitrogen is incorporated in the film forming a mixture of large Al grains and fine grained AlN. In this two-phase cermet region, the resistivity shows a percolation threshold at N/Al=0.45, becoming fully insulating at about N/Al=0.75. Above the arrival rate ratio N/Al=1, excess N is rejected and the films have AlN structure. For stoichiometric AlN films the texture and microstructure depend strongly on the N+2 flux and ion energy. For low ion energies (100 eV) and flux, films are formed with the c axis of the hexagonal AlN structure perpendicular to the film surface, whereas for high ion beam energies (500 eV) the c axis is close to the plane of the film. The AlN grain size also increases with nitrogen ion energy. The relative contributions of chemical driving forces and ion bombardment processes are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335662
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  • 8
    Electronic Resource
    Electronic Resource
    Deposition of amorphous silicon using a tubular reactor with concentric-electrode confinement (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3981-3989 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality, hydrogenated amorphous silicon (a-Si:H) is deposited at room temperature by rf glow discharge at a high deposition rate using a tubular reactor with cylindrical symmetry (concentric-electrode plasma-enhanced chemical vapor deposition, CE-PECVD). Using the novel CE-PECVD design, room-temperature deposition of a-Si:H with growth rates up to 14 A(ring) s−1, low hydrogen concentration ((approximately-less-than)10%), and the bonded hydrogen in the Si-H monohydride configuration, is achieved for the first time using an rf glow-discharge technique. The influence of the deposition parameters (silane flow rate, pressure, and power density) on the growth rate, optical band gap, and silicon-hydrogen bonding configuration, is quantitatively predicted using a deposition mechanism based on the additive contribution of three growth precursors, SiH2, SiH3, and Si2H6, with decreasing sticking coefficients of 0.7, 0.1, and 0.001, respectively. The low hydrogen concentration is due to the enhanced ion bombardment resulting from the concentric electrode design.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350870
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  • 9
    Electronic Resource
    Electronic Resource
    Processing of La1.8Sr0.2CuO4 and YBa2Cu3O7 superconducting thin films by dual-ion-beam sputtering (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2046-2053 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality La1.8Sr0.2CuO4 and YBa2Cu3O7 superconducting thin films, with zero resistance at 88 K, have been made by dual-ion-beam sputtering of metal and oxide targets at elevated temperatures. The films are about 1.0 μm thick and are single phase after annealing. The substrates investigated are Nd-YAP, MgO, SrF2, Si, CaF2, ZrO2-9% Y2O3, BaF2, Al2O3, and SrTiO3. Characterization of the films was carried out using Rutherford backscattering spectroscopy, resistivity measurements, transmission electron microscopy, x-ray diffraction, and secondary ion mass spectroscopy. Substrate/film interaction was observed in every case. This generally involves diffusion of the substrate into the film, which is accompanied by, for example, the replacement of Ba by Sr in the YBa2Cu2O7 structure, in the case of SrTiO3 substrate. The best substrates were those that did not significantly diffuse into the film and which did not react chemically with the film. In general, the superconducting transition temperature is found to depend on substrate temperature and ion beam energy, film composition, annealing conditions, and the nature and the magnitude of the substrate/film interaction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341106
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  • 10
    Electronic Resource
    Electronic Resource
    Field emission from silicon and molybdenum tips coated with diamond powder by dielectrophoresis (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 720-722 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin diamond layers have been formed on molybdenum and single-crystal silicon field emitters using a dielectrophoresis coating method from a suspension of diamond powder in a nonconducting fluid. Transmission and scanning electron microscopy observation revealed a significant amount of diamond on the tips. The average thickness of the deposited diamond layer depended on the applied bias and the immersion time. Field emission from these diamond-coated emitters exhibited significant enhancement compared to the pure emitters. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116585
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