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  • American Institute of Physics (AIP)  (10,194)
  • Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research
  • 2000-2004  (10,224)
  • 1950-1954
  • 1945-1949
  • 1935-1939
  • 2001  (10,224)
Collection
Publisher
Years
  • 2000-2004  (10,224)
  • 1950-1954
  • 1945-1949
  • 1935-1939
Year
  • 1
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    New Digital Compilation of Russian Aeromagnetic and Gravity Data over the North Eurasian Shelf (2001)
    Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research
    In:  EPIC3Polarforschung, Bremerhaven, Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research, 69, pp. 35-39, ISSN: 0032-2490
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    Publication Date: 2019-07-17
    Repository Name: EPIC Alfred Wegener Institut
    Type: "Polarforschung" , peerRev
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  • 2
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    Tectonic Structure of Novaya Zemlya (2001)
    Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research
    In:  EPIC3Polarforschung, Bremerhaven, Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research, 69, pp. 131-135, ISSN: 0032-2490
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  • 3
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    First Highlights from NOGRAM´98 - Northern Gravity, Radio Echo Sounding and Magnetics (2001)
    Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research
    In:  EPIC3Polarforschung, Bremerhaven, Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research, 69, pp. 25-33, ISSN: 0032-2490
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  • 4
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    Eurasian Arctic Margin: Earth Science Problems and Research Challenges (2001)
    Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research
    In:  EPIC3Polarforschung, Bremerhaven, Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research, 69, pp. 3-25, ISSN: 0032-2490
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  • 5
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    Cretaceous/Tertiary Volcanism in North Greenland: the Kap Washington Group (2001)
    Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research
    In:  EPIC3Polarforschung, Bremerhaven, Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research, 69, pp. 17-23, ISSN: 0032-2490
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  • 6
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    Russian Arctic Sedimentary Megabasin and Its Reflection in Oil and Gas Properties of Its Borderlands (2001)
    Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research
    In:  EPIC3Polarforschung, Bremerhaven, Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research, 69, pp. 149-154, ISSN: 0032-2490
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  • 7
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    Mesozoic Tectonic Events in the North Atlantic and Arctic: Stratigraphic Response in an Adjacent Rift-Flank Basin (Sverdrup Basin, Arctic Canada) (2001)
    Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research
    In:  EPIC3Polarforschung, Bremerhaven, Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research, 69, pp. 73-83, ISSN: 0032-2490
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  • 8
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    Kronprins Christian Land Orogeny Deformational Styles of the End Cretaceous Transpressional Mobile Belt in Eastern North Greenland (2001)
    Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research
    In:  EPIC3Polarforschung, Bremerhaven, Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research, 69, pp. 117-130, ISSN: 0032-2490
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  • 9
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    The Reconstruction of the Early Paleozoic Structure of the Barents Sea Sedimentary Basin Inferred from Geophysical Surveys along Profile I-AR (2001)
    Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research
    In:  EPIC3Polarforschung, Bremerhaven, Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research, 69, pp. 85-94, ISSN: 0032-2490
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  • 10
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    Sources and Pathways of Organic Carbon in the Modern Laptev Sea (Arctic Ocean): Implication from Biological, Geochemical and Geological Data (2001)
    Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research
    In:  EPIC3Polarforschung, Bremerhaven, Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research, 69, pp. 193-205, ISSN: 0032-2490
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  • 11
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    Eurasian Basin - Laptev Sea Geodynamic System: Tectonic and Structural Evolution (2001)
    Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research
    In:  EPIC3Polarforschung, Bremerhaven, Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research, 69, pp. 51-54, ISSN: 0032-2490
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  • 12
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    Correlation and Non-Correlation of High Order Circum-Arctic Mesozoic Sequences (2001)
    Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research
    In:  EPIC3Polarforschung, Bremerhaven, Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research, 69, pp. 65-72, ISSN: 0032-2490
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  • 13
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    Northwestern Margin of the East Siberian Sea: Structure, Sedimentary Basin Development and Hydrocarbon Possibilities (2001)
    Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research
    In:  EPIC3Polarforschung, Bremerhaven, Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research, 69, pp. 155-162, ISSN: 0032-2490
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    Publication Date: 2019-07-17
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  • 14
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    Lithology of Upper Quaternary Veneer and Late Cenozoic Paleogeography of the Laptev Sea Margin (2001)
    Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research
    In:  EPIC3Polarforschung, Bremerhaven, Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research, 69, pp. 185-191, ISSN: 0032-2490
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  • 15
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    Some Aspects of the Tectonics of the Verkhoyansk Fold-and-Thrust Belt (Northeast Asia) and the Structural Setting of the Dyandi Gold Ore Cluster (2001)
    Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research
    In:  EPIC3Polarforschung, Bremerhaven, Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research, 69, pp. 169-176, ISSN: 0032-2490
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  • 16
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    Petroleum Potential of Laptev Sea Basins: Geological, Tectonic and Geodynamic Factors (2001)
    Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research
    In:  EPIC3Polarforschung, Bremerhaven, Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research, 69, pp. 259, ISSN: 0032-2490
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  • 17
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    Ancient Deep Faults, Their Reactivation and Peculiarities under Different Geodynamic Conditions in Eastern Yakutia (Northeast Russia) (2001)
    Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research
    In:  EPIC3Polarforschung, Bremerhaven, Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research, 69, pp. 177-184, ISSN: 0032-2490
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  • 18
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    Late Cenozoic Evolution of Northern Eurasian Marginal Seas Based on the Diatom Record (2001)
    Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research
    In:  EPIC3Polarforschung, Bremerhaven, Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research, 69, pp. 211-220, ISSN: 0032-2490
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  • 19
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    Simulation of the Offshore Permafrost and Gashydrate Stability Zone: Mathematical Solution, Numerical Realization and Preliminary Results (2001)
    Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research
    In:  EPIC3Polarforschung, Bremerhaven, Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research, 69, pp. 229-233, ISSN: 0032-2490
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  • 20
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    Sedimentary Cover Thickness Map - Sedimentary Basins in the Arctic (2001)
    Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research
    In:  EPIC3Polarforschung, Bremerhaven, Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research, 69, pp. 243-249, ISSN: 0032-2490
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  • 21
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    Paleomagnetic Investigations in Northeast Greenland and New Data from Devonian(?) and Late Carboniterous Rocks (2001)
    Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research
    In:  EPIC3Polarforschung, Bremerhaven, Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research, 69, pp. 55-64, ISSN: 0032-2490
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  • 22
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    On the Volume of Terrigenous Sedimentation in the Laptev Sea (2001)
    Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research
    In:  EPIC3Polarforschung, Bremerhaven, Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research, 69, pp. 207-210, ISSN: 0032-2490
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  • 23
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    The Eurekan Deformantion of North and Eastern North Greenland (2001)
    Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research
    In:  EPIC3Polarforschung, Bremerhaven, Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research, 69, pp. 95-106, ISSN: 0032-2490
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  • 24
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    Lower Paleozoic Rocks around Today´s Arctic Ocean: Two Ancestral Continents and Associated Plates; Alaskan Rotation Unnecessary and Unlikely (2001)
    Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research
    In:  EPIC3Polarforschung, Bremerhaven, Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research, 69, pp. 235-241, ISSN: 0032-2490
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  • 25
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    Placer Minerals of the Russian Arctic Shelf (2001)
    Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research
    In:  EPIC3Polarforschung, Bremerhaven, Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research, 69, pp. 163-167, ISSN: 0032-2490
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  • 26
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    Modeling of the Offshore Permafrost Thickness on the Laptev Sea Shelf (2001)
    Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research
    In:  EPIC3Polarforschung, Bremerhaven, Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research, 69, pp. 221-227, ISSN: 0032-2490
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  • 27
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    Southeastern Eurasian Basin Termination: Structure and Key Episodes of Tectonic History (2001)
    Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research
    In:  EPIC3Polarforschung, Bremerhaven, Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research, 69, pp. 251-257, ISSN: 0032-2490
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  • 28
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    Alkali-Metasomatites from the Polar Urals (2001)
    Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research
    In:  EPIC3Polarforschung, Bremerhaven, Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research, 69, pp. 143-148, ISSN: 0032-2490
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  • 29
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    Indications of an Ensimatic Island Arc of the Silurian-Early Devonian Paleo-Ocean in the Polar Urals (2001)
    Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research
    In:  EPIC3Polarforschung, Bremerhaven, Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research, 69, pp. 137-141, ISSN: 0032-2490
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  • 30
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    The Tertiary and Cretaceous of Spitsbergen and North Greenland: Its Alpine Signature (2001)
    Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research
    In:  EPIC3Polarforschung, Bremerhaven, Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research, 69, pp. 107-115, ISSN: 0032-2490
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  • 31
    Electronic Resource
    Electronic Resource
    Thermally enhanced frequency upconversion in Nd3+-doped fluoroindate glass (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4498-4501 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multiphonon assisted frequency upconversion was observed in a Nd3+-doped fluoroindate glass pumped at 866 nm. A near-infrared upconverted emission at 750 nm with a peculiar linear dependence with the laser intensity was observed and explained. The intensity of the upconverted emission experienced a 40-fold enhancement when the sample's temperature was varied from 298 to 498 K. A rate equation model that includes light pumping and multiphonon absorption via thermally coupled electronic excited states of Nd3+ was used, describing quite well the experimental results. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1410326
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  • 32
    Electronic Resource
    Electronic Resource
    Electromigration of eutectic SnPb and SnAg3.8Cu0.7 flip chip solder bumps and under-bump metallization (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4502-4508 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electromigration damage in flip chip solder bumps of eutectic SnPb and SnAg3.8Cu0.7 was studied after current stressing at 120 °C with 1.5 A. The diameter of the bumps was about 200 μm. The under-bump metallization (UBM) on the chip side was electroless Ni and on the board side was electroplated Cu. Surface marker motion was used to measure the atomic flux driven by electromigration and to calculate the effective charge number, Z*, of the solder. For eutectic SnPb, Z* is about 36–100 after 39.5 h of electromigration, but for SnAg3.8Cu0.7 the marker movement was too small to measure Z* even after 200 h of current stressing. While the effect of electromigration in SnAg3.8Cu0.7 is much smaller than that in eutectic SnPb, hillocks of intermetallic compounds at the anode have been observed in the former. An extensive growth of Ni–Cu–Sn intermetallic compounds in the matrix of both solder bumps was found. A localized dissolution of electroless Ni UBM was observed under current stressing, yet no dissolution of the Cu UBM by electromigration was found. © 2001 American Institute of Physics.
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    URL: http://dx.doi.org/10.1063/1.1400096
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  • 33
    Electronic Resource
    Electronic Resource
    Ferroelectric properties of KNbO3/KTaO3 superlattices by atomic-level simulation (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4509-4519 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use atomic-level simulation methods to determine the zero-temperature structure and properties of coherent KNbO3/KTaO3 superlattices. We find that the in-plane behavior is essentially bulk-like with an abrupt jump in the polarization at the interfaces. By contrast, the polarization in the modulation direction is continuous through the interfaces with the interior of the KTaO3 layers remaining polarized for modulation lengths of up to 160 unit cells. The zero-frequency dielectric constant in the modulation direction has a similar magnitude to that of KNbO3. An investigation of the switching behavior shows that for modulation lengths greater than 24 unit cells, each KNbO3 layer behaves essentially independently. For modulation lengths of less than 12 unit cells, the KNbO3 layers interact so strongly with each other that the superlattice essentially behaves as a single artificial structure. © 2001 American Institute of Physics.
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    URL: http://dx.doi.org/10.1063/1.1410329
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  • 34
    Electronic Resource
    Electronic Resource
    Characterization of metal-containing carbon films using Raman scattering (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4520-4525 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal-containing carbon (Me-C:H) films were deposited using the electron cyclotron resonance chemical vapor deposition technique in conjunction with a metal screen-grid system. Four sets of Me-C:H films were analyzed using Raman scattering. Two sets were molybdenum-containing carbon (Mo-C:H) films deposited at fixed dc bias (at different CH4/Ar ratios), and at fixed CH4/Ar ratio (at different dc bias). Another two sets of nickel-containing carbon (Ni-C:H) films were deposited at fixed rf power, but at a different CH4/Ar ratio, with and without postgrowth thermal annealing at 200 °C. All films showed the characteristic G and D peaks except for those with high metal content. The D peak is very pronounced in the Ni-C:H films, and both the G and D peaks follow an opposite trend; downshifting and upshifting in wave number, respectively, as the CH4/Ar ratio was increased. In the case of Mo-C:H films deposited at fixed dc bias, both peaks downshifted in wave number, following an increase in the CH4/Ar ratio. The G peak full width at half maximum for both the Ni- and Mo-C:H films increased slightly with an increase in CH4/Ar ratio, consistent with the variation in the relative integrated intensity of the D to G peak (ID/IG). Thermal annealing experiments conducted on the film samples revealed relatively stable characteristics with a minor effect on the film structure. The results showed that the impinging ion energy plays an important role in the structural properties of the Me-C:H films. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1402969
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  • 35
    Electronic Resource
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    In-layer conductivity and photoconductivity in MnPSe3, CdPSe3, and CdPS3 (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4526-4531 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical properties of single crystals of the MnPSe3, CdPSe3, and CdPS3 layered compounds have been investigated by in-layer dc conductivity and photoconductivity measurements as a function of temperature. The observed dc conductivity dependence exhibits a semiconductor behavior for all three compounds in spite of their high resistivity values. At high temperatures the dc conductivity of all three compounds shows an Arrhenius temperature dependence, while photoconductivity is thermally activated only for MnPSe3 and almost temperature independent for CdPSe3 and CdPS3. These results, interpreted in terms of the simplified energy-band schemes existing for CdPX3 and MnPSe3, have allowed us to identify the conduction mechanisms and to deduce more information about the distribution of the electronic states in the gap region. © 2001 American Institute of Physics.
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    URL: http://dx.doi.org/10.1063/1.1406545
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  • 36
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    (Ta1−xNbx)2O5 films produced by atomic layer deposition: Temperature dependent dielectric spectroscopy and room-temperature I–V characteristics (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4532-4542 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature dependent ac dielectric spectroscopy and room-temperature I–V characterization were performed on atomic layer deposited (Ta1−xNbx)2O5 films. The high frequency permittivity, as well as the dc conductivity of the films, were found to increase with increasing Nb content. The conduction mechanism in the mixed Ta–Nb oxide films was of the Poole–Frenkel type, while the high field conduction in pure Ta2O5 was space-charge limited. The activation energy for dc conduction was higher in mixed Ta–Nb oxides compared to pure Ta2O5 and Nb2O5 films. Irreversible changes in the conduction mechanism took place upon heat treatment above a certain irreversibility temperature. This temperature was higher for the mixed oxides than for the binary ones. © 2001 American Institute of Physics.
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    Transport of carriers in metal/porous silicon/c-Si device structures based on oxidized porous silicon (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4543-4548 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Current–voltage (I–V) and impedance measurements of oxidized metal/porous silicon (PS)/c-Si sandwich structures were performed at various temperatures. The I–V dependence at relatively small bias was found to be determined by the resistance of the PS layer. When the reverse bias is increased the injection of carriers commences. A power-law space charge limited current in the I–V dependence was observed at high forward bias. An exponential energy distribution of localized states with a characteristic energy of 60 meV was calculated from these. The existence of an inversion (n-type) layer with high conductivity was established in the p-type c-Si substrate adjacent to the PS layer. The presence of this inversion layer leads to an increase of the active device area, capacitance, and reverse current. © 2001 American Institute of Physics.
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    URL: http://dx.doi.org/10.1063/1.1407845
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    Electronic structure, diffusion, and p-doping at the Au/F16CuPc interface (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4549-4554 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interfaces formed by evaporating Au on copper hexadecafluorophthalocyanine (F16CuPc) and F16CuPc on Au are studied via ultraviolet photoemission spectroscopy and x-ray photoemission spectroscopy. The energy position of the molecular levels is found to depend on the deposition sequence. The Au-on-F16CuPc interface exhibits a lower hole injection barrier than the F16CuPc-on-Au interface. This behavior is attributed to the diffusion of Au into the organic matrix at the Au-on-top interface, in which they behave as acceptors. Band bending consistent with p doping, i.e., upward away from the metal interface, is observed in Au-doped F16CuPc films. Current–voltage measurements on Au/F16CuPc/Au sandwich structures show a higher electron injection barrier at the top Au electrode contact than at the bottom electrode contact, also consistent with p-type doping F16CuPc by Au. © 2001 American Institute of Physics.
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    URL: http://dx.doi.org/10.1063/1.1406967
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    Thermal stability and contact degradation mechanisms of TaC ohmic contacts with W/WC overlayers to n-type 6H SiC (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4555-4559 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ohmic contacts comprised of the layer sequence of W/WC/TaC/SiC showed excellent thermal stability after testing at 600 °C for 1000 h. No degradation of the specific contact resistance nor a reaction of the film with the SiC substrate was observed. From Auger electron spectroscopy depth profiles, it was found that W and WC reacted to form W2C on TaC after annealing. After annealing for several hundred hours at 1000 °C, the specific contact resistance of the W/WC/TaC/SiC contacts displayed noticeable degradation. According to secondary ion mass spectrometry (SIMS) analysis, after annealing at 1000 °C for 600 h, small but measurable changes in the electrical characteristics were associated with O incorporation at the interface between TaC and SiC. Investigation of the W/WC/TaC/SiC interface by transmission electron microscopy (TEM) indicated that a reaction between the W and WC had occurred, but there was no observed reaction with the SiC substrate. After annealing for 1000 h, substantial changes in the chemistry, the microstructure, the specific contact resistance, and the spreading resistance of the contacts were observed. To understand the mechanisms associated with the degradation of the electrical properties, SIMS and TEM analyses were performed on samples annealed for 600, 700, 800, 900, and 1000 h at 1000 °C. These findings indicated that both oxidation and metallurgical reactions played important roles in the degradation of the electrical properties. © 2001 American Institute of Physics.
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    Polarized-photoreflectance characterization of an InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor structure (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4565-4569 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have characterized an InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor structure using polarized photoreflectance (PR) spectroscopy. The ordering parameter of the InGaP is deduced from the polarization {[110] and [11¯0]} dependence of the PR signals from the emitter region. The ordering related piezoelectric field is also found to influence the electric field, as evaluated from observed Franz–Keldysh oscillations, in the InGaP emitter region. The field in the emitter region is found to be about 25 kV/cm smaller than the theoretical value that does not take into account the possible ordering induced screening effect, while the field in the collector region agrees well with the theoretical value. In addition, the InGaAsN band gap is also determined by analyzing the PR spectrum of the base region. © 2001 American Institute of Physics.
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    URL: http://dx.doi.org/10.1063/1.1405823
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    Tight-binding model and electronic structure of tetrahedral zirconium silicate (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4570-4577 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a tight-binding model of Zr silicate in the limit that every Zr and Si atom is bonded to four O atoms. We view the material as being composed of small, relatively uncoupled collections of atoms, called bonding units, with stoichiometries SiSiO4 and ZrSiO4. The SiSiO4 bonding unit constitutes a model for pure SiO2, and the ZrSiO4 bonding unit represents the fundamental element distinguishing tetrahedral Zr silicate from pure SiO2. In the first part of this article we look at the electronic structure of "ideal" bonding units in which the O atoms are arranged in a perfect tetrahedron and the M–O–Si angle is 180° (M=Si or Zr). We find the valence levels of both bonding units to be dominated by O p states, and the lowest conduction levels of the ZrSiO4 bonding unit to derive primarily from Zr d states, whose energy depends sensitively upon the charge transfer to the O atoms. The energy gap of the ideal ZrSiO4 bonding unit is found to be 5.9 eV, compared to 8.0 eV for the SiSiO4 bonding unit. Finally, for the ZrSiO4 bonding unit, we present a simplification which allows the energy levels of the ZrSiO4 bonding unit to be obtained approximately in terms of decoupled Zr–O and Si–O interactions. In the next part of the article we investigate how bond angle and bond length distortions affect the electronic structure of the ZrSiO4 bonding unit. In particular, we note that significant distortions of the Zr–O–Si angle could produce Zr-based localized states that could act as traps for electrons tunneling through the material. In the last part of the article we discuss the basic principles governing band lineups for Si/silicate interfaces constructed by substituting Zr atoms for Si atoms on the SiO2 side of crystalline Si/SiO2 interfaces. We calculate the band lineups as a function of Zr concentration for one particular interface. © 2001 American Institute of Physics.
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    Dependence of carrier doping level on the photo control of (La, Sr)MnO3/SrTiO3 functional heterojunction (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4578-4582 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In a junction system which consists of ferromagnetic- (La1−xSrx)MnO3 and band insulating-SrTiO3, the double exchange ferromagnetism in the (La, Sr)MnO3 layer was controlled by light irradiation through photocarrier injection form SrTiO3. We investigated the dependence of hole doping level (Curie temperature) on the photo control of the (La, Sr)MnO3/SrTiO3 heterojunction. Whereas magnetization and conductivity of the heterojunction with TC of 240 K is strongly reduced, including from metal–insulator transition, by light irradiation, that with TC of 280 K cannot be modulated. This result indicates that phase boundary, between the metallic and insulating region on the (La1−xSrx)MnO3 phase diagram, plays an important role in photo carrier control of the functional heterojunction. © 2001 American Institute of Physics.
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    URL: http://dx.doi.org/10.1063/1.1410328
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    Giant resistance changes in (Al,Ga)As contact layers of GaAs/AlAs superlattices due to deep donors (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4560-4564 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For transport studies on semiconductor superlattices under optical excitation, samples with highly Si-doped (Al,Ga)As contact layers are used due to their optical transparency. These samples exhibit a giant increase of the resistance at temperatures below 200 K. Likewise, the current plateau in the I–V characteristics, which contains the region of current self-oscillations, is shifted towards higher voltages. However, the oscillation frequencies remain unchanged. The current decreases during cooling by as much as seven orders of magnitude. The giant resistance can be compensated for at low temperatures by applying a high dc voltage or by weak illumination. The optically induced current transients are shown to be controlled by thermally activated processes. On the basis of the activation energies derived, it is suggested that the dramatic resistance changes are mainly due to deep donors, i.e., well-known DX centers, in the (Al,Ga)As contact layers. The effects are negligible, if GaAs contact layers are used. Possible DX centers at the AlAs/GaAs interfaces inside the superlattice structure can be therefore neglected. © 2001 American Institute of Physics.
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    Observation of heat flow at transition temperature in La1−xCaxMnO3+δ Oxides (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4583-4586 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heat-flow changes of La1−xCaxMnO3+δ (x=0.25, 0.33, and 0.375) magnetoresistive oxides at their Curie temperatures have been detected using differential scanning calorimetry in the temperature range from 173 to 293 K. However, the transition does not occur in the samples of x=0.125 and 0.5. It was found that the heat flow reflected the transition behavior and the enthalpy change of the transition decreased as the transition temperature increased. These results indicate that the La1−xCaxMnO3+δ oxides (x=0.25, 0.33, and 0.375) undergo an endothermic phase transition from a low-temperature ferromagnetic metal to a high-temperature paramagnetic insulator. It is assumed that the transition is strongly associated with a local structure change, which is correlated with the metal–insulator transition. © 2001 American Institute of Physics.
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    URL: http://dx.doi.org/10.1063/1.1406551
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    Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4587-4608 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The high dielectric constant of insulators currently investigated as alternatives to SiO2 in metal–oxide–semiconductor structures is due to their large ionic polarizability. This is usually accompanied by the presence of soft optical phonons. We show that the long-range dipole field associated with the interface excitations resulting from these modes and from their coupling with surface plasmons, while small in the case of SiO2, for most high-κ materials causes a reduction of the effective electron mobility in the inversion layer of the Si substrate. We study the dispersion of the interfacial coupled phonon-plasmon modes, their electron-scattering strength, and their effect on the electron mobility for Si-gate structures employing films of SiO2, Al2O3, AlN, ZrO2, HfO2, and ZrSiO4 for "SiO2-equivalent" thicknesses ranging from 5 to 0.5 nm. © 2001 American Institute of Physics.
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    URL: http://dx.doi.org/10.1063/1.1405826
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    Structural, magnetic, and transport properties in La0.7Ca0.3Mn1−xScxO3 (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4609-4613 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural, magnetic, and transport properties of polycrystalline La0.7Ca0.3Mn1−xScxO3 have been experimentally investigated. Single-phase samples are obtained in the range 0≤x≤0.25 by the soft chemical synthesis route. The substitution of Sc3+ at the Mn site results in reductions in the Curie temperature Tc and in the magnetic moment per Mn ion. The Tc transition temperature becomes broader with x, and the magnetic spontaneous state has changed into a cluster glass state for the sample of x=0.1. In addition, great enhancement in resistance and magnetoresistance effect is observed in the Sc-doped samples. In our case the notable doping effects can be mainly ascribed to the variation in the Mn3+–O2−–Mn4+ network and to the magnetic disorder caused by the presence of the large and nonmagnetic Sc3+ ions in the Mn sublattice. © 2001 American Institute of Physics.
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    URL: http://dx.doi.org/10.1063/1.1405833
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    Effect of the magnetic-field orientation on the modulation period of the critical current of ramp-type Josephson junctions (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4623-4631 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the dependence of the critical current IC on the value and orientation of an externally applied magnetic field H for interface-engineered YBa2Cu3O7−x ramp-type Josephson junctions. The results are compared with measurements of Nb ramp-type junctions with a PdAu interlayer. The IC versus H dependences are similar to Fraunhofer patterns and their modulation period changes several orders of magnitude with the orientation of the magnetic field. For both junction types, the dependence of the modulation period on the orientation of the magnetic field can be well described by the change of the relevant projection of the junction area and the influence of flux-focusing. Therefore the features of the IC(H) curves have to be attributed to the ramp geometry and not to specific properties of the superconducting material. © 2001 American Institute of Physics.
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    Effect of interfaces on Gilbert damping and ferromagnetic resonance linewidth in magnetic multilayers (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4632-4638 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In magnetic multilayers, the presence of sharp interfaces causes a local increase of the interaction between spin waves and conduction electrons. This leads to an increase of the Gilbert spin-damping parameter near an interface. In turn, the ferromagnetic-resonance linewidth is increased over its value in single-layer films. In addition, the precession of magnetic spins during ferromagnetic resonance induces conduction-electron transitions from the spin-up to the spin-down band. As a result, the spin-up Fermi level differs from the spin-down Fermi level by an amount Δμ¯. At high precession amplitudes, the existence of Δμ¯ causes a measurable decrease of the Gilbert parameter. At precession-cone angles exceeding 4°, the Gilbert parameter returns nearly to its single-layer value. Ferromagnetic-resonance line shapes are predicted to be non-Lorentzian, narrower and sharper near the top. This line-narrowing effect increases with increasing microwave power. The effect of Δμ¯ spreads into the entire multilayer, so that precession in one magnetic layer can cause a reduction or increase of the Gilbert parameter in other layers, or even a spontaneous spin precession in these layers. © 2001 American Institute of Physics.
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    Some common misconceptions concerning magnetic refrigerant materials (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4614-4622 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The relationships between both extensive and intensive properties quantifying the magnetocaloric effect, i.e., between the isothermal entropy change and the adiabatic temperature change, respectively, have been analyzed. An extensive measure of the magnetocaloric effect alone, without considering another important and also extensive thermodynamic property, i.e., the heat capacity, may lead to biased conclusions about the size of the magnetocaloric effect and, consequently, about the applicability of a magnetic material as a magnetic refrigerant. The near room temperature magnetocaloric properties of the colossal magnetoresistive manganites [(R1−xMx)MnO3, where R=lanthanide metal and M is alkaline earth metal] and the recently discovered Fe-based intermetallic material (LaFe11.47Co0.23Al1.3) have been reaccessed and correctly compared with those of the metallic Gd prototype. Our analysis has shown that these 3d materials are inferior to Gd by a factor of 2 or more because of the high values of the heat capacity per unit mass. Also a comparison of the volumetric isothermal entropy change, which is a critical parameter for the operation of a refrigeration unit, indicates that Gd is superior to these 3d materials for practical applications. © 2001 American Institute of Physics.
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    Ac susceptibility studies of ferrimagnetic FeCr2S4 single crystals (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4639-4644 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ac linear and nonlinear susceptibilities, χ0 and χ2, of ferrimagnetic FeCr2S4 single crystals were measured in the temperature range from 4.2 to 300 K for different driving ac and applied dc magnetic fields in the frequency range of 10−1–103 Hz. For high driving ac fields the real part of χ0 exhibits a cusp at around Tm(approximate)60 K correlated with the onset of dc magnetization irreversibilities. The imaginary part of χ0 shows a strong increase below 100 K and nonmonotonic temperature dependence with a maximum shifted toward low temperatures with an increase in the driving field. Both real and imaginary parts of the linear susceptibility, χ0′ and χ0″, show a pronounced frequency dependence between 90 and 20 K with a maximal difference at around 60 K. Below the Curie temperature the real part of the nonlinear susceptibility, χ2, exhibits a broad negative peak which is strongly shifted towards low temperatures with an increase in the driving field. No clearly divergent behavior of χ2′ around Tm is observed. The field and temperature dependencies of χ0 and χ2 are explained by domain wall pinning. Spin-glass-like magnetic anomalies at temperatures below 60 K are attributed to changes in the domain structure and the appearance of additional pinning centers suggested to result from a structural lattice transformation. © 2001 American Institute of Physics.
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    Brown's "fundamental theorem" revisited (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4645-4650 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Brown's method of calculating an upper and a lower bound of the "critical size" for a single domain behavior is recalled, with a particular emphasis on the case of soft ferromagnets. The upper bound for a sphere is very slightly improved. Any further improvement, if at all needed for isolated particles of soft materials, should be done in the same direction. This improvement is used to demonstrate that this method can be extended to the case of interacting neighbors, but not to the study of very many grains, for which micromagnetics is inadequate and has to be superimposed by domain theory. © 2001 American Institute of Physics.
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    Investigation of off-aligned exchange coupling by torque curve and ferromagnetic resonance (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4651-4656 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Off-aligned exchange coupling in bilayer thin film is investigated by torque curve and ferromagnetic resonance (FMR). In off-aligned exchange coupling, the unidirectional anisotropy axis makes an angle β with the anisotropy axis of the ferromagnetic layer. The torque curves of the off-aligned exchange are shifted with respect to the ones of the aligned case (β=0). From the experimental measure of the shift angle α0 and of the torque curve slope at α0, one can determine independently the exchange anisotropy field HE and β values. A description of the FMR modes in such an off-aligned exchange coupling is given. The FMR mode position and linewidth are studied as a function of the anisotropy fields, of the off-aligned angle values, and of the applied field direction. The resonance frequency and frequency linewidth present particular features which will help to do the right interpretation of FMR spectra of these systems. © 2001 American Institute of Physics.
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    Fluctuation field and time dependence of magnetization in TbFeCo amorphous rare earth-transition metal thin films for perpendicular magnetic recording (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4657-4663 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work we report on the experimental analysis of the time decay of magnetization in the films of amorphous TbFeCo alloys for perpendicular magnetic recording. It is shown that the experimental results can be explained on the basis of the thermally activated incoherent subnetwork magnetization reversal model. Thermally activated reversal of the transition metal subnetwork and associated reversal of the antiferromagnetically coupled rare-earth subnetwork may result in effective stabilization of the net film magnetization. Experimentally obtained activation diameter value Da∼5–6 nm corresponds to the exchange length or the domain wall width in the films under study. The small activation diameter value combined with high stability factor k∼250 mean that the TbFeCo amorphous film should be capable of supporting a thermally stable perpendicular recording at over 100 Gbit/in2 recording density. © 2001 American Institute of Physics.
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    Optical and transport properties of Sb-doped SrTiO3 thin films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4664-4667 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optically transparent SrTi1−xSbxO3 (=0.05, 0.10, 0.15, and 0.20) thin films with transmittances higher than 85% in the visible region have been grown on SrTiO3 substrates by pulsed-laser deposition. Unless overdoped, the films possess a single-crystal phase and impurity conduction. The temperature dependence of the resistivities shows a metal–semiconductor transition for the film with x=0.05, and semiconducting behaviors for the films with x=0.10 and 0.15. The overdoped film with x=0.20 is an insulator. Sb concentration has a dominant effect on the electrical properties of the films, and the Anderson localization is probably the mechanism. X-ray photoelectron spectroscopy results indicate that the Sb impurity atoms provide donor electrons to form impurity states within the band gap, which is responsible for the electrical localized impurity. The wide band gap and the low density of states in the conduction band result in the transparency of the films. The disorder increases with Sb concentration, which is the main origin of the evolution of the electrical properties. © 2001 American Institute of Physics.
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    Piezoelectric hysteresis analysis and loss separation (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4668-4675 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Losses in piezoelectrics are approached by considering a description of direct stress–charge displacement hysteresis. Shortcomings of the usual loss models (viscous and Rayleigh, taken separately) are briefly demonstrated. Then, a mixed model for piezoelectric losses superimposing viscous and Rayleigh types of descriptions is proposed and validated for a modified lead titanate and lead zirconate titanate (PZT). It is shown for PZT that viscous and Rayleigh-like loss contributions can be effectively separated by fitting the piezoelectric hysteresis loop with an expression combining the two lossy responses. The possibility to obtain all the necessary parameters that describe piezoelectric stress nonlinearity from one single piezoelectric loop is also demonstrated in the case of PZT. The origins of the mixed loss behavior are interpreted as arising from domain wall motion in terms of internal friction mechanisms and of pinning energy ranges. © 2001 American Institute of Physics.
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    Temperature dependence of the lasing wavelength of InGaAs quantum dot lasers (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4859-4861 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We observe that the emission wavelength of edge-emitting InGaAs quantum dot lasers has a much weaker temperature dependence (0.6 Å K−1) than equivalent quantum well devices (3 Å K−1). Measured gain and absorption spectra show that the gain peak wavelength due to dot states is almost independent of temperature for a given value of peak gain whereas the absorption edge shifts at a rate of about 2 Å K−1. Above 100 K the occupancy of dot states can be described by Fermi functions and on this basis we find that the measured gain and absorption spectra are in excellent quantitative agreement. Although the band edge energy reduces with increasing temperature, this analysis shows that the energy distribution of dot states matches the evolution of the Fermi functions such as to leave the quasi Fermi level separation and the wavelength of the gain peak unchanged as a function of temperature for a given value of peak gain. This energy distribution is a consequence of the dot size distribution so the match to the Fermi functions is probably fortuitous. © 2001 American Institute of Physics.
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    URL: http://dx.doi.org/10.1063/1.1402666
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    Submicron nickel deposition on silicon from an electrolytic solution controlled by near-field optics (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4862-4864 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The application of a near-field optical device to the electrochemical deposition of submicron nickel dots on silicon is demonstrated. The silicon–electrolyte junction behaves like a Schottky diode where the electrolyte plays the role of the metal. The junction is reverse biased so that only a negligible dark current is flowing across the junction. The optical tip of the near-field device is used as a local lightsource to control a photocurrent on a submicron scale, which allows one to create submicron objects of nickel by locally triggering the electrochemical reduction of nickel ions. The effect of the lateral diffusion of the photogenerated carriers on the form of the deposited nickel dots is described by a two-dimensional carrier diffusion model. © 2001 American Institute of Physics.
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    URL: http://dx.doi.org/10.1063/1.1405136
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    Yellow-to-violet upconversion in neodymium oxide nanocrystal/titania/ormosil composite sol–gel thin films derived at low temperature (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4865-4867 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Neodymium (III) oxide nanocrystals synthesized by the inverse microemulsion technique were dispersed in sol–gel titania/organically modified silane (ormosil) composite thin films for photonic applications. X-ray diffraction analysis and transmission electron microscopy observation show that the neodymium oxide nanoparticles have a nanocrystalline structure and that the size of the nanoparticles is in the range of 5–60 nm. An intense room-temperature yellow-to-violet upconversion emission at 402 nm (4D3/2→4I13/2) was measured from the composite thin film heated at 100 °C upon excitation with a yellow light at 587 nm. In addition to this violet emission, ultraviolet emission at 372 nm and blue emission at 468 nm were also observed. The lifetime of the violet emission was measured and the mechanism of the upconversion emission is proposed, and they indicate excited-state absorption originating from the long-lived 4F3/2 excited state should be responsible for the yellow-to-violet upconversion. © 2001 American Institute of Physics.
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    URL: http://dx.doi.org/10.1063/1.1408262
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    Inhomogeneous incorporation of In and Al in molecular beam epitaxial AlInGaN films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4868-4870 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Plasma-induced molecular beam epitaxial AlInGaN heterostructures have been characterized by spatial resolved cathodoluminescence and x-ray energy dispersive microanalysis. Competitive incorporation of Al and In has been observed, with the formation of In-rich regions, showing enhanced luminescence around surface pinholes. These island-like In-rich regions are favored by growth at lower temperature due to the higher incorporation of indium into the alloy. The elastic strain relaxation associated to pinhole formation induces preferential local indium incorporation. The diffusion of carriers to these areas with reduced band gap enhances the luminescence emission of the quaternary film. The width and intensity of the luminescence appear to be sensitive to the mismatch between the quaternary film and the GaN layer below. © 2001 American Institute of Physics.
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    URL: http://dx.doi.org/10.1063/1.1407849
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    Stopping cross sections for 0.3–2.5 MeV protons in GaN and InP (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4871-4873 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The stopping cross sections of the III–V semiconductor materials GaN and InP for 0.3–2.5 MeV 1H have been studied by the Rutherford backscattering technique. The data are given with an estimated uncertainty better than 2% and the agreement with earlier data existing for InP below 500 keV is good. A commonly used model ZBL-85 predicts the data correctly at the high energy end of our energy interval, but overestimates the stopping values by 7% and 4% for GaN and InP, respectively, at the lower energies. © 2001 American Institute of Physics.
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    URL: http://dx.doi.org/10.1063/1.1337076
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    Enhancement of magnetoresistance in the intermediate state of Pr0.5Sr0.3Ca0.2MnO3 (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4874-4876 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Current–voltage (I–V) characteristics of Pr0.5Sr0.3Ca0.2MnO3 are measured at different temperatures and different fields. Our data of I–V curves show a crossover from linear to nonlinear behavior at the temperature lower than the charge ordering temperature. New findings in this work include (i) abrupt jumps/drops of voltage in each I–V curve below 100 K and (ii) an enhancement of magnetoresistance (MR) ratio from 15% to 20% which is associated with the unusual voltage jumps/drops in I–V curves. The enhancement of MR ratio evidences the existence of an intermediate state between the charge ordering state and the charge ordering breakdown state. Most importantly, the existence of such intermediate state provides a new route to achieve a low field colossal magnetoresistance for future applications of spintronics. © 2001 American Institute of Physics.
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    URL: http://dx.doi.org/10.1063/1.1408263
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    Comment on: "Energy band structures of the low-dimensional antiferromagnets Sr2CuO3 and Sr2CuO2Cl2" [J. Appl. Phys. 87, 4897 (2001)] (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4880-4881 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recent electronic structure calculations for the title compounds performed by Wu et al. [H. Wu et al., J. Appl. Phys. 87, 4897 (2000)] are critically reconsidered by applying highly accurate full-potential band structure methods. It is shown that due to a nonconverged basis set the band structure calculations presented here by the authors disagree considerably with those of Wu et al. © 2001 American Institute of Physics.
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    Crystalline orientation effects on the electronic transport properties of LaMnOy thin films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4877-4879 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown epitaxial and polycrystalline LaMnOy thin films on a LaAlO3 substrate by the off-axis magnetron sputtering technique and investigated the crystalline orientation effects on the electronic transport properties. Lattice mismatch, crystalline quality, resistivity, resistivity transition temperature Tp, and magnetoresistance (MR) in epitaxial films exhibit crystalline orientation dependence. The largest Tp and MR are observed in the (111) oriented films. In the polycrystalline films, the Tp is smaller than that of the (011)/(111) oriented films but higher than that of the (001) oriented films. The MR increases with decreasing temperature in contrast to that of the epitaxial films in which the MR experiences a peak near Tp. Oxygen annealing decreases MR and resistivity, and increases Tp in the order: (111)〈(011)〈(001)〈(polycrystalline). The above results suggest that the structure and composition of the epitaxial films improve in the order: (001)〈(011)〈(111). © 2001 American Institute of Physics.
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    Response to "Comment on ‘Energy band structures of the low-dimensional antiferromagnets Sr2CuO3 and Sr2CuO2Cl2' " [J. Appl. Phys. 90, 3708 (2001)] (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4882-4883 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An improvement is made on our previous band results of Sr2CuO3 and Sr2CuO2Cl2 by including the extended Sr 4p valence orbital in the present self-consistent calculations. The differences between our improved results and those of others are mainly due to different evaluation of the ionicity in these compounds. © 2001 American Institute of Physics.
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    URL: http://dx.doi.org/10.1063/1.1407848
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    Filled liquid crystal depolarizers (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3675-3678 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The construction and properties of scattering type liquid crystal depolarizers are discussed. The Mueller matrices that describe these devices are measured and compared to ideal depolarizers and ideal linear materials. The present depolarizers do not perform as well as crystal pseudodepolarizers. Nevertheless, when polarized light is incident on one of these devices the polarization of the transmitted light can be uniform to within 5%. These devices have the advantage that they can be made to areas as large as 30–30 cm or larger, are inexpensive, and can be electrically switched off and on. © 2001 American Institute of Physics.
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    URL: http://dx.doi.org/10.1063/1.1401799
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    Generalized model for all-optical light modulation in bacteriorhodopsin (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3679-3688 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a generalized model for the photochemical cycle of bacteriorhodopsin (bR) protein molecule. Rate equations have been solved for the detailed light-induced processes in bR for its nine states: B→K↔L↔MI→MII↔N↔O↔P→Q→B. The complete steady-state intensity-induced population densities in various states of the molecule have been computed to obtain a general, exact, and analytical expression for the nonlinear absorption coefficient for multiple modulation pump laser beams. All-optical light modulation of different probe laser beam transmissions by intensity induced population changes due to one and two modulation laser beams has been analyzed. The proposed model has been shown to accurately model experimental results. © 2001 American Institute of Physics.
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    URL: http://dx.doi.org/10.1063/1.1403679
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    Electron diode with a large area ferroelectric plasma cathode (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3689-3698 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The operation of a planar diode with a large area (64 cm2) ferroelectric plasma cathode based on BaTiO3 ceramics is studied. Diode parameters and parameters of the generated electron beam are investigated under accelerating voltage of 200–350 kV and pulse duration of 250 ns. Parameters of the plasma, which forms on the surface of the ferroelectric cathode due to incomplete discharge, are reported as well. It is shown that the application of this cathode allows one to produce an electron beam simultaneously with application of the accelerating pulse. The generation of an electron beam with current density up to 20 A/cm2 and divergence of less than 1° is demonstrated. It is shown that diode operation is governed by parameters of the cathode plasma which fills the anode–cathode gap prior to application of the accelerating voltage pulse. By proper adjustment of the cathode and diode parameters the operation of the diode with almost constant impedance is achieved. Measurements of the potential distribution in the diode confirm that the diode operates in a plasma-prefilled mode. The cathode is found to be capable of operating for up to 105 pulses at a repetition rate of few Hz without any maintenance and with relatively small vacuum deterioration. © 2001 American Institute of Physics.
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    Noncollisional heating and electron energy distributions in magnetically enhanced inductively coupled and helicon plasma sources (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3699-3712 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ability to deposit power in the volume of plasma reactors at locations deeper than the conventional skin depth makes magnetically enhanced inductively coupled plasma (MEICP) and helicon sources appealing for use in materials processing. Mechanisms for power deposition and electron energy transport in MEICPs have been computationally investigated using a two-dimensional (2D) plasma equipment model. Using a tensor conductivity in the solution of Maxwell's equations, three-dimensional components of the inductively coupled electric field are produced from an m=0 antenna and 2D applied magnetic fields. These fields are then used in a Monte Carlo simulation to generate electron energy distributions (EEDs), transport coefficients, and electron impact source functions. The electrostatic component of the wave is resolved by estimating the charge density using an oscillatory perturbed electron density. For MEICPs operating at pressures less than 10 mTorr in Ar, significant power deposition occurs downstream when the radial and axial components of the electric field are commensurate with the azimuthal component. For magnetic fields above 100 G, the tail of the EED (〉20–30 eV) is enhanced in the downstream region. This enhancement results from noncollisional heating by the axial electric field for electrons in the tail of the EED which have long mean free paths, while lower energy electrons are still somewhat collisional. © 2001 American Institute of Physics.
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    URL: http://dx.doi.org/10.1063/1.1400091
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    Plasma potential in the presence of an external electric field (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3713-3719 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied the mechanism and behavior of a plasma in the presence of an external electric field with a one-dimensional fluid model. We used a two-fluid model, treating both electron and ion motions, rather than a commonly used one-fluid model assuming the electron thermal equilibrium. In particular, we investigated the following issues: (1) the motion of plasma electrons caused by an external static electric field and the formation of a plasma potential; (2) influence of parameters on the plasma potential, which are plasma electron temperature, plasma density, and applied voltage. The plasma potential rises and reaches a value nearly equal to the anode potential in a few nanoseconds. It is higher for a higher anode potential, a higher electron temperature, and a lower plasma density. © 2001 American Institute of Physics.
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    URL: http://dx.doi.org/10.1063/1.1394901
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    Thomson scattering in a low-pressure neon mercury positive column (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3720-3725 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electron density and the electron temperature in a low-pressure neon mercury positive column are determined using Thomson scattering. Special attention has been given to the stray light reduction in the Thomson scattering setup. The results are obtained in a discharge tube with a 26 mm diam, 10 mbar of neon, a mercury pressure inbetween 0.14 and 0.85 Pa, and an electric current ranging from 100 to 400 mA. The systematic error in the electron density is 15%–45%, the statistical error is 25%–35%. The total error in the electron temperature is 15%–35%. © 2001 American Institute of Physics.
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    URL: http://dx.doi.org/10.1063/1.1390497
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    Experimental study and simulations of electronegative discharges at low pressure (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3735-3742 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed an experimental and theoretical analysis of the rf discharges at low pressure in a small reactor for industrial applications. In particular, we focused on the plasma produced from electronegative gases (air and SF6) in the low pressure range between 0.05 and 1 mbar. The device pumping system sustains a flow velocity of about 50 cm/s, with residence time in the discharge of about 0.2 s, at P=0.1 mbar. The discharge parameters have been measured by means of movable electrostatic probes and lies in the range ne≅107–109 cm−3, ni≅1010–1012 cm−3, and Te≅5–10 eV. Particular care in the analysis of the data proved necessary due to the presence of a substantial amount of negative ions. On the other hand, we have performed simulations of the discharge composition through the implementation of a suitable numerical model of the chemical kinetics in the device. On the basis of the experiments, a comparison of charged species production with those predicted by the theory was performed and a more realistic description of the involved phenomena was obtained. In particular, several assumptions concerning the ion diffusion coefficient were tested, allowing one to pin down the relative importance of transport and bulk processes in the discharge state. © 2001 American Institute of Physics.
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    Metallic contamination in hydrogen plasma immersion ion implantation of silicon (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3743-3749 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In plasma immersion ion implantation (PIII), ions bombard all surfaces inside the PIII vacuum chamber, especially the negatively pulsed biased sample stage and to a lesser extent the interior of the vacuum chamber. As a result, contaminants sputtered from these exposed surfaces can be reimplanted into or adsorb on the silicon wafer. Using particle-in-cell theoretical simulation, we determine the relative ion doses incident on the top, side, and bottom surfaces of three typical sample chuck configurations: (i) a bare conducting stage with the entire sample platen and high-voltage feedthrough/supporting rod exposed and under a high voltage, (ii) a stage with only the sample platen exposed to the plasma but the high-voltage feedthrough protected by an insulating quartz shroud, and (iii) a bare stage with a silicon extension or guard ring to reduce the number of ions bombarding the side and bottom of the sample platen. Our simulation results reveal that the ratio of the incident dose impacting the top of the sample platen to that impacting the side and bottom of the sample stage can be improved to 49% using a guard ring. To corroborate our theoretical results, we experimentally determine the amounts of metallic contaminants on 100 mm silicon wafers implanted using a bare chuck and with a 150 mm silicon wafer inserted between the 100 mm wafer and sample stage to imitate the guard ring. We also discuss the effectiveness of a replaceable all-silicon liner inside the vacuum chamber to address the second source of contamination, that from the interior wall of the vacuum chamber. Our results indicate a significant improvement when an all-silicon liner and silicon guard ring are used simultaneously. © 2001 American Institute of Physics.
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    Co-implantation of Be+O and Mg+O into GaN (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3750-3753 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Beryllium and magnesium were co-implanted with oxygen into GaN at precise donor-to-acceptor ratios of 0.5–2. High activation efficiency was achieved for Be+O co-implants at a donor–acceptor ratio of 2 and anneal temperatures of 1050–1100 °C. The activation process was not a simple, single-step mechanism. Hall data indicated a relatively low (≤100 meV) ionization energy for Be in the co-implanted samples. This process may have application in improving p-ohmic contact resistance by selective area Be+O implantation. By sharp contrast Mg+O co-implants produced n-type conductivity under all conditions. © 2001 American Institute of Physics.
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    Equilibrium thermodynamic theory for the evaluation of temperature distributions in overdriven steady-plane wave fronts (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3754-3761 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature distributions in overdriven steady wave fronts in solid 2024 Al shocked up to 80 GPa, in which no melting occurred in the wave fronts, were evaluated using the equilibrium thermodynamic theory. The effective strain increments were sufficiently small and the effective temperature rise times were sufficiently long with respect to electron–phonon relaxation times to justify using equilibrium thermodynamics. In addition, the sufficiently large viscous-stress components supported the efficacy of the thermodynamic theory. The same is true of shocks up to 250 GPa in solid Pt and 230 GPa in solid Fe. Furthermore, the influence of viscous stress was examined by evaluating the temperature distributions for inviscid 2024 Al, Pt, and Fe solids using the equations for temperature derived from the Mie–Grüneisen equation. Finally, we demonstrate that there might be a solid–liquid–solid Hugoniot between the solid and liquid–solid Hugoniots for Fe and estimate the solid–liquid–solid and liquid–solid Hugoniots. © 2001 American Institute of Physics.
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    Green function method for nonlinear elastic waves in layered media (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3762-3770 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We construct the Green function for an elastic medium with a plane source. This Green function is particularly helpful in the analysis of weakly nonlinear problems, such as occur in nondestructive acoustic evaluation of bonded structures. By using a perturbative approach we describe the amplitude distribution of the second harmonic of the driving frequency by linear equations with sources. In deriving the Green function we include both longitudinal and transverse polarizations and consider an arbitrary direction of the wave vector with respect to the layer normal. We show how this Green function can be combined with the transfer matrix approach to calculate the fields in layered structures. The examples of second harmonic generation from half space and a single layer are considered. © 2001 American Institute of Physics.
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    Dielectric spectroscopy of Pb(Mg1/3Nb2/3)O3-PbTiO3 single crystals (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3504-3508 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Complex impedance spectroscopic data were acquired on single crystals of the morphotropic phase boundary composition of 0.68Pb(Mg1/3Nb2/3)O3-0.32PbTiO3 over a wide range of temperatures (25–525 °C) and frequencies 1 kHz–1 MHz. This study takes advantage of plotting ac data simultaneously in the form of impedance and modulus spectroscopic plots. This permits the easy interpretation of microscopic processes responsible for the measured ac response. Frequency explicit plots of imaginary components of impedance and modulus exhibit Debye-like peak shapes. The data for ac conductivity were computed from the impedance data and the activation energy for conduction at different frequencies was determined. Cole–Cole diagrams were plotted and these indicate the presence of a single relaxation process. The relaxation times determined from these plots followed an Arrhenius law, and the activation energy for relaxation was found to be 1.2 eV. The ac conductivity data was found to obey Jonscher's universal power law and resulted in a value of the exponent "n"=0.95. © 2001 American Institute of Physics.
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    Luminescence of bulk and nanocrystalline cubic yttria (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3516-3523 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The luminescence of nanocrystalline cubic yttria has been measured for 300 and 80 K. A blueshift and a broadening of the absorption edge, both depending on the particle size were found. The energy of the radiation emitted due to the recombination of a bound exciton does not depend on particle size. The observations are not caused by quantum or phonon confinement. Using a quantum mechanical configurational coordinate diagram an explanation can be given. Hydrostatic pressure increasing the phonon energy of the excited state of the bound exciton, or an increase of the exciton-phonon coupling may generate the size dependent optical properties of nanocrystalline yttria. © 2001 American Institute of Physics.
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    URL: http://dx.doi.org/10.1063/1.1388022
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    Physical and electrical properties of Ge-implanted SiO2 films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3524-3528 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal–oxide–semiconductor structures with a Ge nanocrystal embedded in SiO2 films were fabricated by Ge+ ion implantation and subsequent high-temperature annealing. The Raman spectra indicate the evidence of self-assembled Ge nanocrystals in the SiO2 films. The Ge size and its density were estimated to 3–5 nm and 1×1012/cm2, respectively. Photoluminescence spectra showed a strong blue–violet band around 400 nm and a weak near-infrared band around 750 nm, respectively. The several implantation-induced deficient centers are believed to be responsible for the blue-light luminescence. Capacitance–voltage characteristics exhibit the flatband voltage shifts of 1.02 V after the electron injection into the SiO2/Ge/SiO2 potential well. An anomalous leakage current was clearly observed in the current–voltage characteristics. The precise simulation of quantum electron transport in the SiO2 film indicates that the anomalous conduction is originated from resonant tunneling in the SiO2/Ge/SiO2 double-well band structure. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1399024
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    Highly sensitive recognition element based on birefringent porous silicon layers (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3529-3532 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Anisotropically nanostructured silicon layers exhibit a strong in-plane birefringence. Their optical anisotropy parameters are found to be extremely sensitive to the presence of dielectric substances inside of the pores. Polarization-resolved transmittance measurements provide an extremely sensitive tool to analyze the adsorption of various atoms and molecules in negligible quantities. A variation of the transmitted linearly polarized light intensity up to two orders of magnitude combined with a fast optical response in the range of seconds make these layers a good candidate for sensor applications. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1391417
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    Microfabrication and characteristics of double-rectangular spiral type thin-film inductors with an upper NiFe magnetic core (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3533-3538 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Simple, double-rectangular spiral-type thin-film inductors with an upper Ni81Fe19 core for 5 MHz drive dc–dc converter application were investigated. Copper films 10-μm-thick covered by a 3-μm-thick NiFe film were used as the coils. The inductors fabricated in this study are 2.5×3.4–3.5×5.5 mm2. The inductors developed, with a small size of 2.97×3.1 mm2, exhibit L of 1.43 μH, quality factor of 15.8, and resistance of 2.88 Ω at 5 MHz, and show results comparable to those reported in recent literature for similar inductors sandwiched by more complex magnetic core materials. An analysis of the experimental data suggests an equivalent circuit of the fabricated inductors. From the equivalent circuit analysis, C was shown to have a negligibly small effect over the frequency ranges used. The calculated data obtained from the equivalent circuit and the well-known equation of Q described the high-frequency data of the L, Q, and impedance of the inductors developed well. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1399026
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    Silicon single-electron tunneling device fabricated in an undulated ultrathin silicon-on-insulator film (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3551-3557 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a silicon single-electron tunneling device fabricated in an ultrathin (∼3 nm) silicon-on-insulator (SOI) film whose surface is undulated by an alkaline-based solution. The nanometer-scaled undulation in the ultrathin film results in great SOI thickness variations and brings about large electron-potential fluctuations, due to the difference of the quantum confinement effects from one part to another. Consequently, a number of quantum dots are effectively formed in the undulated ultrathin SOI film. This device shows clear Coulomb blockade oscillations at 80 K, as well as nonvolatile single-electron memory functions even at room temperature. The measurements of the undulation with atomic force microscopy reveal that the undulation has two correlation lengths. Based on the analysis of electrical characteristics, it is concluded that the Coulomb blockade oscillations are dominated by a quantum dot formed by the longer-correlation-length undulation and that single-electron memory effects are due to quantum dots formed by the shorter-correlation-length undulation. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1392959
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    Lateral profiling of impurity surface concentration in submicron metal–oxide–silicon transistors (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3539-3550 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Theory and line-shape analysis of carrier recombination current at interfacial electronic traps under a surface controlling gate in metal–oxide–silicon (MOS) structures is investigated using the Shockley–Read–Hall recombination statistics. The theoretical analysis demonstrates the sensitive dependence of the line shape of the peaked basewell-terminal recombination current versus gate/base voltage (IB–VGB) characteristics on the lateral variation of the impurity concentration along the surface channel. An electrical measurement method is presented based on this discovery for extracting the impurity surface concentration profile NIM(x=0, y, z) in the five regions (basewell, drain and source junction and extension) covered by the gate conductor in submicron MOS transistors. Impurity surface concentration profiles in the basewell channel region are then extracted by the analytical theory for MOS transistors fabricated by an advanced 0.13 μm complementary MOS technology. Effects of nitrogen in the gate oxide and current generated in the drain and source extension regions for profiling the NIM in the extension regions are illustrated. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1396825
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    Radiation response of n-type base InP solar cells (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3558-3565 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of particle irradiation on the electrical properties of high efficiency p/n InP solar cells have been studied using a variety of techniques including current–voltage and spectral quantum efficiency measurements (QE), electron beam induced currents (EBIC), and deep level transient spectroscopy. A detailed analysis of the radiation response of the solar cell photovoltaic response is presented, and the primary damage mechanisms are identified. Data measured after irradiation by protons of various energies are correlated in terms of displacement damage dose to produce a characteristic degradation curve for the p/n InP technology. This characteristic curve is compared to that of the n/p InP technology to provide an assessment of the relative radiation hardness of the p/n devices. Radiation-induced decreases in the minority carrier diffusion length in both the p-type emitter and n-type base at low damage levels have been extracted from the QE and EBIC measurements, and damage coefficients have been determined. At high damage levels, EBIC profiles suggest that the primary device degradation mechanism is an increase in bulk resistivity due to electron trapping in the base. However, capacitance–voltage measurements did not indicate any change in the junction capacitance. A model to account for these effects based on radiation-induced defect kinetics is presented. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1398592
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    Phase-locking Josephson junctions arrays (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3570-3577 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that a large area Josephson junction oscillating in the fluxon oscillator mode can be synchronized to other large junctions and simultaneously pump, by emitted radiation, a small area junction. We study the synchronization of the oscillations of the long junctions as a function of relevant experimental parameters such as bias current and stripline coupling characteristics. Experimental results obtained on coupled series arrays of Josephson junctions designed on the basis of our calculations are presented. We have fabricated coupled arrays containing each up to 1500 junctions in order to estimate the usefulness of our calculations for voltage standard devices. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1402662
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  • 85
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    28 ps recovery time in an InGaAsP/InGaAsP multiple-quantum-well saturable absorber employing carrier sweepout (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3566-3569 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe fast recovery at a wavelength of 1550 nm in a multiple-quantum-well (MQW) saturable absorber with InGaAsP quaternary wells and barriers using electric-field-induced carrier sweepout. The MQW SA is integrated with a distributed Bragg reflector in a p-type–intrinsic–n-type structure. Pump–probe measurements show that the recovery time can be reduced from 〉900 to 28 ps by application of a 151 kV/cm sweepout field. We measure the dependence of the recovery time on the energy of the saturating pulse and explain our results in terms of carrier dynamics in the sweepout field. © 2001 American Institute of Physics.
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    URL: http://dx.doi.org/10.1063/1.1399032
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    Characterization of holographic polymer dispersed liquid crystal transmission gratings (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3831-3837 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate physical properties of polymer dispersed liquid crystal transmission gratings which influence the light diffraction efficiency behavior. Scanning electron microscopy is used to determine the orientation and shape of nanometer-sized liquid crystal droplets in a polymer host. Dependence of diffraction efficiency on light polarization suggests that the orientation of a liquid crystal within the ellipsoidal droplets is axial. The distribution of droplet orientations appears to vary for different grating spacings. The switching properties of the gratings are investigated and analyzed with a sinusoidal dielectric tensor modulation model. The analysis also takes into account orientational distribution of average directors and spatial distribution of the droplets. Temperature dependence of diffraction efficiency is tentatively explained by a structural transition within the droplets and the presence of impurities in droplets. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1405821
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    Extreme ultraviolet emission from Xe clusters excited by high-intensity lasers (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3595-3601 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The property of extreme ultraviolet (EUV) generation from Xe clusters irradiated with intense lasers was studied. The Xe cluster jet was well characterized by the interferometric method. In order to obtain the adequate irradiation condition for strong EUV generation, EUV spectra were taken with various laser systems. Then, the wavelength, the pulse width, and the pump energy were widely varied. Through this survey, even with the comparatively low-density Xe jet of ≤5×1018 cm−3 average atomic density, the highest conversion efficiency of over 10% from laser energy to EUV (5–18 nm) was obtained with a subpicosecond KrF laser pulse, where a 4π source was assumed. This EUV source is considered to be attractive as an EUV lithography light source because of its low average atomic density and small Xe cluster. © 2001 American Institute of Physics.
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    URL: http://dx.doi.org/10.1063/1.1396822
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    Electrical activation of ultralow energy As implants in Si (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3873-3878 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Arsenic implants performed in Si at ultralow energy have been extensively studied with structural, chemical, and electrical analysis. The near-surface damage annealing and its influence on the electrical activation of ultrashallow As in Si as a function of the anneal ambient has been investigated. Double alignment medium energy ion scattering, high resolution transmission electron microscopy, and low energy secondary ion mass spectrometry have been used to assess the dopant behavior and crystal recovery in the near-surface regions. The electrical activation of As in Si has been measured with spreading resistance profiling, four point probe, and van der Pauw methods. Major redistribution of the dopant into the SiO2–Si interface region occurred during crystal regrowth of the damaged Si layer. An inactive meta-stable As solid solution was formed in the near-surface region after amorphous layer regrowth. Electrical activation of the dopant occurred upon dissociation of the As solid solution, when the dopant concentration fell to the steady state level. The As diffusion observed has been shown to be enhanced for short (10 s) anneal times at 1100 °C. When annealing at high temperature in an oxidizing ambient the dopant is retained at a high concentration in the solid and a higher level of electrical activation is observed. Significant outdiffusion of the dopant is observed during high temperature annealing in nonoxidizing conditions which reduced the level of activation. © 2001 American Institute of Physics.
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    URL: http://dx.doi.org/10.1063/1.1403672
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    Origin of point defects in AgInS2/GaAs epilayer obtained from photoluminescence measurement (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3894-3898 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The AgInS2 epilayers with a chalcopyrite structure grown using a hot-wall epitaxy method have been confirmed to be a high quality crystal. From the optical absorption measurement, the temperature dependence of the energy band gap on AgInS2/GaAs was found to be Eg(T)=2.1365 eV−(9.89×10−3 eV)T2/(2930+T). After the as-grown AgInS2/GaAs was annealed in AgInS2/GaAs has been investigated by using the photoluminescence (PL) at 10 K. The native defects of VAg, VS, Agint, and Sint obtained from PL measurements were classified as a donors or acceptors type AgInS2/GaAs to an optical p type. Also, we confirmed that In in AgInS2/GaAs did not form the native defects because In in AgInS2 did exist in the form of stable bonds. © 2001 American Institute of Physics.
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    URL: http://dx.doi.org/10.1063/1.1405132
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    Chemical vapor deposition of Si on chlorosilane-treated SiO2 surfaces. II. Selective deposition in the regions defined by electron-beam irradiation (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3887-3893 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article reports a selective-area deposition process using chlorosilane-treated ultrathin SiO2 masks on which the patterns are directly defined by irradiation of a focused electron beam (EB). Three different chlorosilane gases (SiH2Cl2, SiHCl3, and SiCl4) were first adsorbed on the SiO2 surfaces, and the regions with reactive sites were defined by taking advantage of electron-stimulated desorption (ESD) of the surface adsorbates. For the SiHCl3- and SiH2Cl2-treated surfaces, the nucleation density was remarkably high in the EB-irradiated regions. Such nucleation enhancement was less significant for the SiCl4-treated surface. For the purpose of direct patterning and selective growth, we conclude that SiHCl3 is the optimum treatment gas because it effectively suppresses Si nucleation outside of the EB-irradiated patterns. The overall ESD sensitivity of the SiHCl3-adsorbed mask was 50 mC/cm2, and a significant nucleation enhancement was observed by irradiation of 7 mC/cm2. We also report an extension of this selective-area processing to window opening through the ultrathin SiO2 mask layer. The factors limiting the minimum feature size of the grown Si structures and the opened windows are discussed. © 2001 American Institute of Physics.
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    URL: http://dx.doi.org/10.1063/1.1402978
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    Strong localization of Bloch photons in dual-periodic dielectric multilayer structures (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3905-3909 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We predict that singular photonic Bloch modes with extremely narrow bandwidths occur in dual-periodic dielectric multilayer structures. The electromagnetic field of these modes is shown to be strongly localized around the troughs of undulated periodic dielectric structures, which leads to an extraordinary high-Q value effect in the dual-periodic one-dimensional photonic crystals. We also propose several real systems suitable for experimental confirmation of the features predicted. © 2001 American Institute of Physics.
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    URL: http://dx.doi.org/10.1063/1.1405832
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    Initial formation and growth of an amorphous phase in Al–Pt thin films and multilayers: Role of diffusion (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3899-3904 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Despite their technological importance for nanoscale technologies, the initial stages of reaction at interfaces (and their dependence on experimental conditions) are still poorly understood. In this article we analyze the initial stages of solid state reaction (SSR) in Al/Pt multilayers (period: 54 nm, overall composition: Al4Pt) and compare the results to those recently obtained by high temperature sequential deposition (HTSD). These two methods differ in several aspects, the most important being the state of reacting Pt (solid in SSR, vapor in HTSD) and its flux (limited in HTSD by the deposition rate). The chemical driving force for the Al/Pt reaction are thus different. We have shown that: (i) The first reaction product observed during SSR or HTSD is the same: namely, a metastable amorphous Al2Pt phase (a-Al2Pt): (ii) This amorphous phase grows in a layer by layer mode. Its growth is diffusion controlled during SSR and stops when all the available Pt is consumed. In the case of HTSD the layer growth is limited by the Pt evaporation rate and diffusion only controls the "critical" thickness that the amorphous layer can reach. (iii) The Al diffusion coefficients in a-Al2Pt deduced from the a-Al2Pt growth rate (SSR) or "critical" thickness (HTSD), using the Nernst–Einstein equation in order to take into account the difference in the chemical driving forces, are similar. © 2001 American Institute of Physics.
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    URL: http://dx.doi.org/10.1063/1.1403682
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    Quantitative C lattice site distributions in epitaxial Ge1−yCy/Ge(001) layers (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3910-3918 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial metastable Ge1−yCy alloy layers with y≤0.035 were grown on Ge(001) from hyperthermal Ge and C atomic beams at deposition temperatures Ts of 250 and 300 °C. The use of hyperthermal beams allows us to controllably vary the concentration of C incorporated as Ge–C split interstitials. Ge1−yCy layers grown with incident Ge-atom energy distributions corresponding to ≤0.14 lattice displacement per incident atom (dpa) are in a state of in-plane tension and contain significant concentrations of C atoms incorporated in substitutional sites. Increasing the dpa to 0.24 yields layers in compression with C incorporated primarily as Ge–C split interstitials. Ab initio density functional calculations of the formation energies and strain coefficients associated with C atomic arrangements in Ge show that configurations containing multiple C atoms, referred to collectively as C nanoclusters, are energetically more favorable than substitutional C and Ge–C split interstitials and yield a nearly zero average strain. In contrast, substitutional C and Ge–C split interstitials produce large tensile and compressive strains, respectively. Using the calculated strain coefficients, measured layer strains obtained from high-resolution reciprocal lattice maps, and substitutional C concentrations determined by Raman spectroscopy, we obtain the fraction of C atoms incorporated in substitutional, Ge–C split interstitial, and nanocluster sites as a function of the total C concentration y and Ts. We find that at low y and Ts values, all C atoms are incorporated in single-C configurations: substitutional C and Ge–C split interstitials. Their relative concentrations are controlled by the dpa through the production of near-surface Ge self-interstitials which are trapped by substitutional C atoms to form Ge–C split interstitials. Increasing y and Ts, irrespective of the dpa, leads to an increase in the fraction of C nanoclusters, while the fractions of substitutional C and Ge–C split interstitials decrease, due to the higher C–C encounter probability at the growth surface. © 2001 American Institute of Physics.
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    URL: http://dx.doi.org/10.1063/1.1402137
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    Microscopic observation of Cu damascene interconnect grains using x-ray microbeam (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2792-2795 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microscopic observation and imaging of Cu damascene interconnect grains were carried out using the x-ray microbeam of the BL-16XU at SPring-8. The x-ray focusing system of the beamline consists of a bent-cylindrical prefocusing mirror and elliptical mirrors with a Kirkpatric–Baez configuration. Diffraction spots from the microscopic area irradiated by the intense x-ray microbeam (7×6 μm full width at half maximum) at the boundary between the metal line and the dielectric were observed. The diffraction spots observed show that Cu(111) grains grow normally on the sidewall and Cu(200) grain orientation distribution is quite broad, suggesting that crystallographic texture near the trench is quite disordered. Two-dimensional images of grains with a specific orientation angle were also obtained. Grains as large as about 10 μm caused by self-annealing were observed. © 2001 American Institute of Physics.
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    URL: http://dx.doi.org/10.1063/1.1398074
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    Enhancement of electrical conductivity in α-Al2O3 crystals doped with magnesium (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3942-3951 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Direct current and alternating current electrical measurements were performed to investigate the electrical conductivity of α-Al2O3:Mg samples with different concentrations of [Mg]0 centers (Mg ions each with a trapped hole) in the temperature interval 250–800 K. The concentration of [Mg]0 centers was monitored by the optical absorption peak at 2.56 eV. These centers were produced by oxidation at temperatures above 1050 K. The formation rate of [Mg]0 centers depends on the previous thermal history of the sample in either reducing or oxidizing atmosphere. At low electrical fields, dc measurements reveal blocking contacts. At high fields, the I–V characteristic is similar to that of a diode (corresponding to a blocking contact at one side of the sample and an ohmic contact at the other side) connected in series with the bulk resistance of the sample. Steady electroluminescence is emitted at the negative electrode when a current in excess of (approximate)10 μA passes through the sample, indicating that the majority of carriers are holes. Low voltage ac measurements show that the equivalent circuit for the sample is the bulk resistance in series with the junction capacitance (representing the blocking contacts) connected in parallel with a capacitance, which represents the dielectric constant of the sample. The values determined for the bulk resistance in both dc and ac experiments are in good agreement. The electrical conductivity of Al2O3:Mg crystals increases linearly with the concentration of [Mg]0 centers, regardless of the amount of other impurities also present in the crystals, and is four times higher in the c(parallel) than in the c⊥ direction. The conductivity is thermally activated with an activation energy of 0.68 eV, which is independent of: (1) the [Mg]0 content, (2) the crystallographic orientation, and (3) the concentration of other impurities. These results favor the small-polaron-motion mechanism. © 2001 American Institute of Physics.
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    URL: http://dx.doi.org/10.1063/1.1402669
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    Spectroscopic properties of CaF2:U4+ as a saturable absorber (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3965-3972 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spectroscopic properties of crystals of CaF2:U4+ have been examined in light of recent interest expressed for this material as a saturable absorber in the passive Q switching of near infrared solid state lasers. The detailed crystal-field splitting of the energy levels of U4+(5f2 ) is analyzed for the ion in different charge-compensated sites. Identification of the site is based on laser excited site-selective spectroscopic studies reported earlier. Experimental Stark levels are compared with calculated levels based on lattice-sum models that include charge compensation in the lattice structure. The final set of atomic parameters for U4+ is in good agreement with values reported for the ion in UF4. The predicted non-Kramers' doublet as the ground-state Stark level for U4+ in C3V sites is in agreement with the spectroscopic analysis and with results reported earlier from electron spin-resonance studies of CaF2:U4+. Using pump–probe methods, we have investigated excited state absorption (ESA) at 1.54 μm. Consistent with the interpretation of the absorption spectra, we find that the measured ESA is quite small in these crystals. In turn, we use this conclusion to model CaF2:U4+ as a passive Q switch, with good results. © 2001 American Institute of Physics.
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    URL: http://dx.doi.org/10.1063/1.1396833
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    N-type negative differential conductance in quasiballistic single-barrier heterostructures (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3979-3983 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose a mechanism for negative differential conductance in nanometric single barrier heterostructures when transport is controlled by tunneling processes and space charge effects. Theoretical expectations are confirmed by Monte Carlo simulations of a model GaAs–GaAlAs–GaAs semiconductor heterostructure. © 2001 American Institute of Physics.
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    URL: http://dx.doi.org/10.1063/1.1404420
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    Interface photoluminescence in type II broken-gap P–Ga0.84In0.16As0.22Sb0.78/p-InAs single heterostructures (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3988-3992 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mid-infrared photoluminescence has been observed from interface transitions in high quality, abrupt P–Ga0.84In0.16As0.22Sb0.78/p-InAs heterojunctions grown by liquid phase epitaxy from an In-rich melt. The Ga0.84In0.16As0.22Sb0.78 quaternary epitaxial layer was unintentionally doped and grown lattice matched on to a (100) oriented p-type InAs substrate, resulting in a P–p isotype heterojunction. The photoluminescence emission spectra were investigated and exhibited three pronounced emission bands in the spectral region from 0.30 to 0.68 eV; hν1=0.317 eV, hν2=0.380 eV, and hνL=0.622 eV. The emission band hν1 was identified with radiative transitions between electron and hole quantum well subbands in the semimetal channel at the P–GaIn0.03As0.10Sb/p-InAs interface, while the hν2 band originates from radiative transitions involving deep acceptor states in the InAs substrate. The high-energy recombination hνL is characteristic of the Ga0.84In0.16As0.22Sb0.78 bulk quaternary layer. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1402968
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  • 99
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    Current crowding and 1/f noise in polycrystalline silicon thin film transistors (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4019-4026 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Here we investigate dc characteristics, impedance versus frequency, and low frequency noise. The effect of current distribution on 1/f noise in polycrystalline silicon thin film transistors (TFTs) is discussed. We show that the channel impedance versus frequency roll induces spectra that could be misinterpreted above a corner frequency in terms of a frequency index γ in 1/fγ with γ higher than 2. Moreover, ignoring the inhomogeneous current distribution leads to overestimation of the noise parameter. Whereas it seemed evident that the noise in TFTs can be interpreted in terms of carrier number fluctuation, the noise parameter variation versus the gate bias can be also understood in terms of mobility fluctuations by including the potential barrier evolution. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1404418
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  • 100
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    Electronic states in modulation doped p-AlGaN/GaN superlattices (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4032-4038 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The properties of p-AlGaN/GaN modulation doped superlattices (SLs) prepared by molecular beam epitaxy were studied by means of conductivity versus temperature, admittance spectroscopy, photoinduced current spectroscopy, microcathodoluminescence (MCL) spectra measurements, and measurements of effective diffusion lengths. It is shown that in SLs grown on GaN underlayers the sheet resistivity is about two orders of magnitude lower than for reference p-GaN films and the resistivity of SLs remains lower up to temperatures of about 350 °C. For SLs grown on AlGaN underlayers the gain in resistivity is much more moderate and certain advantages in using such SLs are envisaged only for temperatures below room temperature. The reason for this lower gain is a considerable decrease in hole mobility compared to p-GaN. The effect is somewhat tentatively attributed to worse crystalline perfection of these SLs. It is also shown that such SLs are characterized by a strongly broadened MCL peak and the presence of additional hole traps with activation energy of about 0.4 eV. Despite that, the photosensitivity and MCL intensity of these SLs are much better than for reference p-GaN samples. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1405819
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