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  • 1
    Electronic Resource
    Electronic Resource
    Production of potassium monobasic phosphate using a molten salt technique (1978)
    s.l. : American Chemical Society
    Journal of agricultural and food chemistry 26 (1978), S. 1267-1271 
    Details
    ISSN: 1520-5118
    Source: ACS Legacy Archives
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jf60220a018
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  • 2
    Electronic Resource
    Electronic Resource
    The crystal structure of Na2Cd11 (1965)
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 19 (1965), S. 849-852 
    Details
    ISSN: 0001-5520
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0365110X65004437
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  • 3
    Electronic Resource
    Electronic Resource
    Manganese-mediated synthesis of cis-disubstituted cyclohexadienes via double nucleophilic addition to coordinated arenes
    Amsterdam : Elsevier
    Inorganica Chimica Acta 214 (1993), S. 125-134 
    Details
    ISSN: 0020-1693
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/S0020-1693(00)87533-7
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  • 4
    Electronic Resource
    Electronic Resource
    Wetting reaction versus solid state aging of eutectic SnPb on Cu (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4843-4849 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reaction kinetics of eutectic SnPb solder on Cu were studied and compared in the liquid state at 200 to 240 °C and in the solid state aged at 125–170 °C. The ternary phase diagrams of SnPbCu, the morphology of intermetallic compound (IMC), and the kinetics of growth of the intermetallics were used in the comparison. The temperature difference between these two reactions is only 30 °C, but the kinetics of reaction, as well as the morphology of IMC formation, are very different. The kinetics in the wetting reaction is four orders of magnitude faster than that in solid state aging. The Cu6Sn5 intermetallic morphology in solid state aging is a layer type, but it has a scallop-type morphology in the wetting reaction. The morphology strongly affects the kinetics. While the kinetic difference can be attributed to the difference in atomic diffusivity between the liquid state and the solid state, it is the morphology that determines the kinetic path in these reactions. We conclude that a fast rate of reaction, which leads to a high rate of Gibbs free energy change, controls the reaction, not the Gibbs free energy change itself. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1357469
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  • 5
    Electronic Resource
    Electronic Resource
    Isomerization of ethylbenzene and m-xylene on zeolites (1988)
    s.l. : American Chemical Society
    Industrial & engineering chemistry research 27 (1988), S. 942-947 
    Details
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ie00078a008
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  • 6
    Electronic Resource
    Electronic Resource
    Interfacial reaction and wetting behavior in eutectic SnPb solder on Ni/Ti thin films and Ni foils (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6746-6751 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ni-based under bump metallization (UBM) is of interest in low cost flip chip technology primarily due to a slower chemical reactions with high-Sn solders such as eutectic SnPb as compared to Cu-based UBM. We studied wetting behaviors and interfacial reactions of the eutectic 63Sn–37Pb on Ni foils and Ni/Ti thin films using transmission electron microscopy (TEM), scanning electron microscopy, and energy dispersion x-ray analysis. Wetting angle, morphology of solder surface, and the rate of consumption of Ni have been studies as a function of reflow time at the temperatures of 200, 220, and 240 °C. From the TEM analysis, we found that Ni forms a single layer of scallop-type Ni3Sn4 compound with the eutectic SnPb. During the isothermal annealing, we observed the spalling of Ni3Sn4 compound from the Ni/Ti thin films. The spalling phenomenon is similar to that of Cu6Sn5 from the Cu/Cr thin films, yet the rate is slower. The spalling of Ni–Sn compound eventually caused dewetting of the molten solder from the Ti surface. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371751
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  • 7
    Electronic Resource
    Electronic Resource
    Electromigration of eutectic SnPb solder interconnects for flip chip technology (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3189-3194 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electromigration of eutectic SnPb solder interconnects between a Si chip and a FR4 substrate was studied at 120 °C for up to 324 h with current stressing of 104 amp/cm2. Hillocks were observed at the anode and voids at the cathode. The dominant diffusing species was found to be Pb, confirmed by its accumulation at the anode. Diffusion markers were used to measure the electromigration flux and calculate the effective charge of atomic diffusion in the solder. Extensive microstructural evolution was also observed in the two-phase solder alloy that occurred by a ripening process. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1342023
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  • 8
    Electronic Resource
    Electronic Resource
    Optimization of EPU6 undulator at PLS : Papers from the 12th National Synchrotron Radiation Instrumentation Conference (2002)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 73 (2002), S. 1440-1441 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Pohang Accelerator Laboratory (PAL) is developing an Elliptically Polarized Undulator (EPU) to produce polarized synchrotron radiation at Pohang Light Source (PLS). The EPU6 is an Apple-II type elliptical undulator, which changes the polarization of the field by translating the quadrant arrays. The PLS EPU6 features a period of 6 cm, a minimum gap of 19 mm, 25 full field periods, a maximum vertical flux density of 0.69 T, a maximum horizontal flux density of 0.46 T, and 1575 mm total magnetic structure length. The EPU6 is optimized for highly polarized synchrotron radiation from 117 to 1500 eV at 2.5 GeV electron energy. Using correction coils to compensate the orbit drift in the undulator increased the estimated photon flux by 15% compared to the case without the compensation. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1447584
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  • 9
    Electronic Resource
    Electronic Resource
    Electromigration of eutectic SnPb and SnAg3.8Cu0.7 flip chip solder bumps and under-bump metallization (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4502-4508 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electromigration damage in flip chip solder bumps of eutectic SnPb and SnAg3.8Cu0.7 was studied after current stressing at 120 °C with 1.5 A. The diameter of the bumps was about 200 μm. The under-bump metallization (UBM) on the chip side was electroless Ni and on the board side was electroplated Cu. Surface marker motion was used to measure the atomic flux driven by electromigration and to calculate the effective charge number, Z*, of the solder. For eutectic SnPb, Z* is about 36–100 after 39.5 h of electromigration, but for SnAg3.8Cu0.7 the marker movement was too small to measure Z* even after 200 h of current stressing. While the effect of electromigration in SnAg3.8Cu0.7 is much smaller than that in eutectic SnPb, hillocks of intermetallic compounds at the anode have been observed in the former. An extensive growth of Ni–Cu–Sn intermetallic compounds in the matrix of both solder bumps was found. A localized dissolution of electroless Ni UBM was observed under current stressing, yet no dissolution of the Cu UBM by electromigration was found. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1400096
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  • 10
    Electronic Resource
    Electronic Resource
    Direct correlation between microstructure and mechanical tensile properties in Pb-free solders and eutectic SnPb solder for flip chip technology (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 482-484 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The relationship between the microstructure and the mechanical tensile properties of lead-free solders and eutectic SnPb solders is presented for flip chip scale interconnects. Eutectic Sn–37Pb and Sn–0.7Cu solder (in wt %) exhibited a ductile fracture after tensile testing. Eutectic Sn–3.5Ag solder (in wt %) had greater strength and exhibited a brittle fracture at the interface. The different fracture behavior of the lead-free solders was attributed to the grain size and configuration of the intermetallics. Minor additions of alloying elements to the high Sn lead-free solder dramatically affected the microstructure and mechanical properties. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1388160
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