ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • American Institute of Physics (AIP)  (5,220)
  • Nature Publishing Group  (3,541)
  • Alfred Wegener Institute for Polar and Marine Research & German Society of Polar Research
  • 2005-2009
  • 1985-1989  (8,772)
  • 1955-1959
  • 1950-1954
  • 1985  (8,772)
Collection
Publisher
Years
  • 2005-2009
  • 1985-1989  (8,772)
  • 1955-1959
  • 1950-1954
Year
  • 101
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5529-5531 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A graphical method is presented for Hall data analysis, including the temperature variation of activation energy due to screening. This method removes the discrepancies noted in the analysis of recently reported Hall data on Si(In).
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 102
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5525-5528 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new injection pulse phenomenon is reported which may have a variety of applications including the detection of infrared (IR) radiation. Injection current pulses were observed in simple circuits containing forward biased silicon p-i-n diodes at liquid-helium temperatures. Under exposure to IR radiation, the pulse rate was observed to increase approximately linearly with increasing incident IR intensity. The substantial voltage, current, and power output may eliminate the need for on-chip amplifiers in many applications. Figures of merit are discussed, although the performance of the devices has not yet been optimized.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 103
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5532-5534 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The time-dependent partial differential equation governing the two-dimensional driven diffusion in a cylindrical rod is solved analytically with an exchange strength at the surface that is either (i) proportional to the local surface concentration, or (ii) a constant. Both solutions are in the form of infinite series containing Bessel functions. Results from these calculations can be used to determine various thermodynamic properties of a solute in a homogeneous solid solution.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 104
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5539-5541 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Light-induced effects in lightly boron-doped hydrogenated amorphous silicon alloys have been studied in coplanar and sandwich sample configurations. It is observed that metastable changes in these films anneal out at a significantly lower temperature (≤ 100 °C) than in undoped films.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 105
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5542-5543 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CdS and Cd1−xZnxS single crystals have been grown by a modified vapor growth technique. They have high transmission and high resistivity (〉1010 Ω cm). The results of transmission measurements are reported.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 106
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5535-5538 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper presents the changes of electrical characteristics in zinc oxide varistors subjected to hydrostatic pressure up to 4 kbar. Electrical measurements have been carried out with pressurized samples. Beyond 1 kbar, the leakage current increases exponentially with pressure as described by the relationship IF=P7,4. This leads to a decrease, by a factor of 2, of the nonlinear coefficient. In spite of choosing a different experimental approach and different material compounds, our results are in very good agreement with those already published.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 107
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4843-4848 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An electro-optical technique has been developed to measure high-frequency electric fields in free space. Electrically induced birefringence in an electro-optical crystal is used to modulate a linearly polarized continuous-wave laser beam. The modulation impressed on the laser beam contains both frequency and field intensity information. A way to use this technique as both a frequency and power meter is discussed. A proof-of-principle experiment has been carried out with a 3.1-GHz magnetron source.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 108
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4849-4855 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A fast and simple algorithm is presented for calculating the effects of energy loss and scattering on electrons which pass through a converter foil. This algorithm is designed to be integrated into particle-in-cell codes for electron-beam transport. The results of this algorithm for such quantities as energy and number transmission and reflection coefficients compare very favorably with results obtained from a more sophisticated Monte Carlo transport code for pertinent applications. The savings in time is appreciable: this algorithm is approximately 30 times faster than the more sophisticated code.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 109
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4839-4842 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method is developed to describe the off-equilibrium property of an open system by taking the difference between the forward and backward stochastic processes into account. Here the forward probability is concerned with an initially conditioned ensemble of fluctuations whereas the backward one is concerned with the finally conditioned ensemble of fluctuations described by the Bayes' probability. An asymmetrical property between the correlation function of the forward process and that of the backward one is shown to be an experimentally useful measure of off-equilibrium property. The above method is applied to the time series of stationary brain waves to find that the brain waves in both the active and meditative state of the brain are regarded as off-equilibrium fluctuations. The violation of the principle of detailed balance results in the asymmetry between forward and backward conditional entropies.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 110
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4820-4822 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We calculate the contributions of pure collision and phonon-assisted Auger processes within the framework of the Kane model to the nonradiative lifetime of p-doped GaAs. Our approach employs refined expressions for the wavefunction overlap integrals. Further, in contrast to previous treatments, our theory correctly describes the temperature dependence of the optical phonon-assisted Auger processes. Our values for the Auger lifetimes are in good agreement with experimental results.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 111
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4823-4825 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In Se–Tl, Se–Cd, Se–Au, and Se–Te contacts prepared by evaporation on a crystallized selenium layer, Schottky barrier heights were measured from junction capacitance. These were found to decrease systematically with the work function of the contacting metal. From this variation, the density of interface states was estimated to be about 1014 cm−2 eV−1, assuming an interfacial layer thickness of 10 A(ring). The neutral level of the states was estimated to lie close to the valence band edge.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 112
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4826-4827 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature (∼4 K) photoluminescence has been studied on as-grown and thermally annealed Si-doped GaAs grown by molecular beam epitaxy. The peak intensities of the defect-related emissions, due to the defect-induced bound exciton (d, X) and the defect complex (d) are decreased by thermal annealing. On the other hand, Hall measurements show that free carrier concentrations are decreased only slightly by thermal annealing.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 113
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 102-104 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SnOx films with different values of x were deposited by rf sputtering. Secondary emission yield δ, physical density γ, and electrical resistivity ρ of the films were investigated. Higher values of δ than those of bulk SnO and SnO2 were found. From the experiment it results that δ, γ, and ρ increase with the increase of x. The crossover energy Ec, the primary electron energy for δ=1, decreases with x. Analysis of the experimental data and theory leads to the conclusion that the main factor which determines the maximum secondary electron emission yield δm is the ratio between the escape probability and the work function.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 114
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 105-109 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microwave energy stored in a superconducting cavity is released to an output circuit in a short time by a gas discharge switch which is different from previous works. Output pulse of 350 times the input cw power fed to the cavity is obtained. A cw microwave is incident on a superconducting lead cavity of TE011 cylindrical mode with resonant frequency 2.868 GHz and unloaded Q of 3.8×106. A small semicircular glass tube with two electrodes and with rarefied helium gas is set inside the cavity. Pulsed discharge current of the order of 100 A and time width 0.4 μsec produces high-density plasmas which may be equivalent to a metal loop antenna. Large microwave output pulses of time width 0.17 μsec are produced. It is suggested that the apparatus may be extended to millimeter microwave pulse production.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 115
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 10-17 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of space charge and lens aberrations on a 5-keV, 80–200-mA electron beam focused by a solenoid lens are investigated theoretically and experimentally. A third-order radial trajectory equation is derived with space charge added in the form of discrete annular current elements. This equation is numerically solved for the trajectories of focused electrons in a short solenoid lens. Trajectories launched near the axis are "reflected'' from the axis at the waist due to space charge, and trajectories launched farther from axis, cross the axis. The resulting discontinuity is best illustrated in a transverse phase-space plot where it may be described as a "tearing'' of the electron distribution. Due to the combined action of the nonlinear lens forces and the space charge, the initially uniform radial current density distribution becomes markedly nonuniform (hollow or peaked depending on distance) downstream from the lens. Detailed experimental measurements of the density profiles at different positions are found to be in very good agreement with computations.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 116
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 110-112 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The maximum supercurrent through a long and narrow Josephson junction has been calculated numerically as a function of an applied magnetic field for various feed current distributions. The results have been shown to depend drastically on the mode of the current feed. In particular, the real nonuniform distribution ηov (x) of the current corresponding to the overlap geometry of the junction is nearly equivalent to the mixture yηun+(1−y)ηin with the factor y approaching unity as the junction length increases: (1−y)=Cy(L/λj)−0.5, Cy(approximately-equal-to)1.7. In contrast with the static properties, the shape of the zero-field step in the long junction I-V curve appears to be almost independent of the mode of the current feed, because of averaging of the Lorentz force by the travelling Josephson vortices.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 117
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 113-118 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The hydrostatic piezoelectric coefficient dh has been measured for biaxially-oriented poly(vinylidene fluoride) transducers using pressure pulses having peak values of 1.8×107 Pa (2600 psi) and a pulse width of approximately 10 ms. For these measurements, the sample was placed in an oil pressure chamber at room temperature and the pressure pulse was initiated by dropping a 16-kg mass onto a plunger in the chamber. Since adiabatic compressional heating accompanies the pressure pulse, temperature compensation of the transducer was necessary. This was achieved by incorporating a thermocouple in the bilaminate configuration of the transducer and by amplifying the thermocouple signal appropriately to account for the pyroelectric response due to adiabatic heating, which was approximately 15% of the transducer signal. The calculation of dh shows that the response of the bilaminate transducer is linear up to 1.8×107 Pa (2600 psi).
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 118
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 119-122 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: dc plasma etching experiments were carried out on polycrystalline Si wafers using CF4 and CF4/O2 mixtures as etchants. The etchants were injected into a slow stream of Ar while a continuous discharge was maintained. The resulting transients of intermediate and product species were determined mass spectrometrically; some of these were found to depend very much on the oxygen concentration, even though hysteresis effects which complicated earlier results were not noticed in this study.The results do not support existing simplified models, but yield some detailed information concerning the etching mechanism. The etch rates increase when small amounts of oxygen are added to the CF4, probably due to an increase in the atomic fluorine concentrations, while at larger oxygen concentrations they decrease, in part because the fragmentation of the etchant gas CF4 is then suppressed. CF2 radicals are found to be present in the plasma in appreciable concentrations; presumably, this species is directly involved in the formation of SiF4 at the surface.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 119
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 129-134 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxidation of III-V compound semiconductor (110) cleaved surfaces under light irradiation is studied. The light irradiation enhanced the reaction rate of oxidation but the relationship between oxide growth and oxidation time under logarithmic law scarcely changed within this experimental range. The oxidation trend observed under light irradiation is similar to that of thermal oxidation for GaP, GaAs, InP, InAs, InGaAs, and InGaAsP. Semiconductors having As as the V element tend to be easily oxidized, while those of the above mentioned six kinds of materials having Ga as the III element are quickly oxidized in their initial stage. Ternary and quaternary compound semiconductors have less tendency to be oxidized compared to their constituent binary materials. off
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 120
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 123-128 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ionic conductivity σ and mobility μ in the amorphous network polymers from poly(propylene oxide) (PPO) containing lithium perchlorate (LiClO4) at the concentration of [LiClO4]/[PO unit]=0.042 and 0.076 were investigated by means of complex impedance and time-of-flight methods. The σ values of the PPO–LiClO4 complexes reached 10−5 S cm−1 at 70 °C. The temperature dependence of σ deviated from a single Arrhenius behavior above a critical temperature (−1 °C and 11 °C) which approximately corresponded to the glass transition temperature Tg. The μ values were relatively high and changed from 10−6 to 10−5 cm2 V−1 s−1 in the temperature range of 40–100 °C. The Nernst–Einstein equation correlated μ with the ionic diffusion coefficient D. The Williams–Landel–Ferry equation with C1(approximately-equal-to)5 and C2(approximately-equal-to)30–50 held with a temperature dependence of D in the order of 10−8–10−7 cm2 s−1. The change in the number of ionic carriers n with temperature obeyed the Arrhenius equation with the activation energy of 0.26 and 0.34 eV. The degree of dissociation for LiClO4 in the PPO networks was 1–6%, and the dissociation was facilitated in the low LiClO4 concentration complex. The temperature dependence of σ above Tg was interpreted quantitatively in terms of n and μ.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 121
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 135-140 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The time dependence of optical density during a coloration and bleaching sequence has been investigated in the isotropic phase for several liquid-crystalline materials doped with a small amount of tetra-n-alkyl-ammonium iodide. As a result, a rate equation fitting experimental results obtained for low current densities has been derived: dOD/dt=αJ−κ(OD+OD0), where OD is the change in optical density of colored cells after the application of dc current, J is the applied current density, α is a coefficient related to the coloration rate, κ is a coefficient governing the bleaching rate, and OD0 is a constant for a given cell. Furthermore, the dependence of these coefficients upon electrolyte concentration, cell thickness, and cell temperature has been studied. The value of α is almost independent of device parameters, while κ is dependent upon the latter two parameters.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 122
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 141-145 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that the performance of photoelectrochemical cells based on the lamellar material InSe can be considerably improved by means of a selective (photo)electrochemical etching. Whereas the cleavage Van de Waals plane (⊥ to c axis) shows little improvement, the photcurrent in the (parallel) face (parallel to the c axis) is doubled (30 mA cm−2 under AM1 illumination). For n-type InSe a reverse bias (+1.5 V versus standard calomel electrode SCE) was employed during the photoetching, p-InSe electrodes were electrochemically etched by applying a forward bias (+1.5 V). In both cases, surface holes carry out the selective corrosion of the semiconductor surface which is another manifestation for the asymmetry played by holes and electrons on semiconductor surfaces. It is hoped that this finding will pave the way for the construction of high-efficiency solar cells based on a thin film made of lamellar materials.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 123
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 154-156 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A semiempirical analytic central potential model is used to calculate optical oscillator strengths, generalized oscillator strengths, and integrated cross sections up to 5 keV for electrons colliding with sodium atoms. The excitations 3s-np are discussed, and the results for 3s-3p are compared to experiment.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 124
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 146-153 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electroencephalogram and magnetoencephalogram maps measured on the head can be used to estimate the location, orientation, and amplitude of electrical sources in the brain. It is known that differences in the electrical conductivities of the various tissues in the head can affect these maps and estimates, e.g., the low conductivity of the skull "smears'' electroencephalogram maps and makes sources appear deeper in the head than they actually are. Since fissures in the brain are filled with cerebrospinal fluid, which is several times more conductive than the brain tissue in which the sources are located, and since fissures are close to many of the sources, they may have significant effects on the maps and estimates of source parameters. However, little or no information is available about these effects. This study uses a spherically-shaped computer model of the head which contains fissures to determine these effects. It is found that even a fissure as large as the interhemispheric fissure has a maximum effect on location estimates of 0.75 cm and a maximum effect on orientation estimates of 15°. The maximum effect of this fissure on amplitude estimates is 28% with the estimates being larger than the actual source for sources perpendicular to a fissure and smaller for sources parallel. In general, there are no significant differences in the effects of the fissures on estimates using electroencephalogram and magnetoencephalogram maps. The fissures cause a radial source in the spherically-shaped head model to produce only a small magnetic field with a map like that of a source perpendicular to the fissure; a radial source in a sphere with no fissures would produce no magnetic field. Since most fissures in the brain are smaller than the ones in this head model, it is concluded that actual fissures in the brain have little effect on electroencephalogram and magnetoencephalogram maps and source estimates using these maps.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 125
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 564-567 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated depth of melting as a function of pulse energy density in amorphous and crystalline silicon layers. The melting threshold for KrF laser pulses (λ=0.249 μm, τ=24×10−9 s) in amorphous (7660-A(ring)-thick) and crystalline silicon layers were determined to be 0.16±0.02 and 0.75±0.05 J cm−2, respectively. The formation of fine- and large-polycrystalline regions was clearly identified in the amorphous silicon layers for energy densities below that needed for complete annealing. The role of explosive recrystallization in the formation of the fine polycrystalline region is discussed.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 126
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 568-574 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties of all components of heterojunction solar cells based on hydrogenated amorphous silicon (a-Si:H) have been measured individually. By combining these data with knowledge of the cell geometry, an envelope quantum efficiency curve is generated, being simply the fraction of incident photons absorbed in the i layer of the p-i-n cell. Resultant curves for typical cell dimensions are seen to agree remarkably well with observed values for cells with long minority-carrier collection lengths. The model is then used as a diagnostic tool, and finally is demonstrated to have predictive value in the quest for further optimization of solar-cell performance.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 127
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5211-5219 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diffusion profiles and the solubility of Cu in Ge were measured in the temperature interval 850–1200 K by means of the spreading-resistance technique. From these data it is concluded that the diffusion of Cu in Ge involves the interchange between a highly mobile interstitial configuration, Cui, and a practically immobile substitutional configuration, Cus, with the aid of vacancies, V, via the so-called dissociative mechanism, Cui+V(arrow-right-and-left)Cus. The excellent agreement of the values of the vacancy contribution to the tracer self-diffusion coefficient in Ge, as calculated from our diffusivity and solubility data on Cu in Ge, with directly measured values of the 71Ge tracer self-diffusion coefficient from the literature demonstrates that self-diffusion in Ge occurs via vacancies. A comparison with the mechanisms of Au and self-diffusion in Si is presented.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 128
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5226-5235 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The permeation characteristics of deuterium in several iron and nickel based alloys were measured by the gas phase breakthrough technique in the temperature range 100 to 500 °C with applied pressures ranging from 10 Pa to 100 kPa. The restriction of the gas flux imposed by surface oxides was modeled in order to evaluate the effects of surface oxide retardation of the gas flux on the effective values of the deuterium permeabilities and diffusivities in the alloys. The most permeable alloys were 430 and 431 stainless steels. The next most permeable alloy was Monel K-500, which exceeded the permeability of pure Ni by more than a factor of five at room temperature. The alloys with permeabilities less than pure Ni were, in order of decreasing permeability: the Inconels 625, 718, and 750, the Fe-Ni-Co glass-sealing alloys Kovar and Ceramvar, and the 300-series stainless steels. Deuterium trapping within the alloys appeared to influence the values of bulk diffusivities, which were not correlated with either the permeabilities or the chemical compositions of the alloys.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 129
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5236-5239 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe the results of a novel adaptation of the volumetric technique to measurement of the pressure concentration isotherms for thin films of the palladium-hydrogen system. The isotherm shapes are comparable to bulk being steep in the alpha and beta phases and flat in the mixed phase region. However, it is noted that the concentration onset of the beta phase is smaller than bulk and drops markedly for thicknesses less than 670 A(ring). Comparison is made with quartz crystal microbalance results. We find a thickness dependence to the number of absorption-desorption cycles required to obtain reproducible isotherms.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 130
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5240-5245 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of TiSi2 thin films on silicon substrates has been investigated with several transmission electron microscope techniques. For films formed either by reacting titanium with a silicon substrate or by sintering a codeposited (Ti+Si) mixture, electron diffraction patterns show that a metastable phase—TiSi2 (C49 or ZrSi2 structure)—forms prior to the equilibrium phase—TiSi2 (C54 structure). High-resolution images indicate that the metastable TiSi2-silicon interface is atomically sharp, with no "glassy membrane'' layer present. The annealing temperature required to transform the metastable TiSi2 to the low resistivity, equilibrium TiSi2 increases as the thin-film impurity content increases. Previous studies of TiSi2 formation are discussed in light of these results.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 131
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5246-5250 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interfacial reactions of iron thin films on silicon have been investigated by transmission electron microscopy. FeSi was found to form after 400 °C annealing. Small amount of Fe3Si was detected in samples annealed at 450 to 500 °C. β-FeSi2 grains were predominant with a few FeSi grains remained in samples annealed at 600 °C. β-FeSi2 was found to be the dominant phase, whereas α-FeSi2 was predominant in samples annealed at 900–1100 °C in N2 ambient and in vacuum, respectively. Two-step annealings were effective in promoting the growth and improving the quality of epitaxial FeSi2. More uniform growth of epitaxial FeSi2 was observed for samples annealed in vacuum than those heat treated in N2 ambient. The mechanisms of epitaxial growth and the influence of impurities on the interfacial reactions are discussed.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 132
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5256-5261 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the first nondestructive measurement of the chemical and physical characteristics of the interface between bulk SiO2 and thick aluminum films. Both x-ray photoelectron spectroscopy (XPS) and electrical measurements of unannealed, resistively evaporated Al films on thermal SiO2 indicate an atomically abrupt interface. Post metallization annealing (PMA) at 450 °C induces reduction of the SiO2 by the aluminum, at a rate consistent with the bulk reaction rate. The XPS measurement is performed from the SiO2 side after the removal of the Si substrate with XeF2 gas and thinning of the SiO2 layer with HF:ETOH. This represents a powerful new approach to the study of metal-insulator and related interfaces.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 133
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5251-5255 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicidation of titanium (Ti) thin films sputter-deposited onto silicon (Si) was performed by the halogen lamp annealing method. This method was found to be quite effective in forming oxide-free and homogeneous titanium disilicide (TiSi2). Temperature dependence of silicidation was investigated by using Rutherford backscattering spectroscopy, x-ray diffraction, and sheet resistance measurements. It was found that the dominant crystal phase of silicide formed during annealing at 600 and 625 °C for 90 sec was titanium monosilicide (TiSi), and that a homogeneous TiSi2 with resistivity of ∼15 μΩ cm was formed at 700 °C. Self-aligned TiSi2 with low resistivity can be obtained with two-step annealing: the first-step annealing was carried out below 600 °C and followed by removal of unreacted Ti on silicon dioxide (SiO2), and the second-step annealing was carried out above 650 °C.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 134
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5262-5267 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An improved technique for seeded laser recrystallization of silicon-on-insulator stripes has been developed using a slanted elliptical beam and a computer-controlled system to register laser scans to alignment marks on the silicon wafer. After the wafer position is automatically determined by searching for alignment marks with a low-power beam, a raster is generated parallel to the device features, and the aligned laser beam is swept across the wafer. The dependence of the defect structure of the recrystallized films on the parameters used for scanning and the resulting thermal gradients are described. With the proper choice of parameters, defect-free, single-crystal silicon films over oxide stripes up to 65 μm wide have been obtained.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 135
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5268-5270 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The etching of both amorphous and single-crystal Si with XeF2 vapor has been investigated by ion backscattering spectrometry. The etching rate of vapor-deposited Si measured both in situ during the etch and after completion of etching indicates a strong dependence on the partial pressure and thus the flow rate of XeF2. Single-crystal (100) Si exhibits almost twice the etching rate of amorphous Si, which can possibly be attributed to a preferred etching direction in single crystals.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 136
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4861-4869 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The study of asymmetrically self-reversed lines emitted by inhomogeneous gas discharges has been made on the basis of an extension of the multiparameter method. A new procedure has been developed which makes it possible to determine the line broadening at the arc axis, its radial variation, and the ratio shift/width. An investigation is made into the effect of these quantities on the determination of the plasma temperature. The proposed method has been applied to high-pressure mercury discharges operating on dc and ac (50 Hz) using the mercury line 5461 A(ring). The pressure broadening in the impact approximation has been measured to be (1.43±0.11)×104 mA(ring) atm−1 K0.7; the corresponding line shift is towards the blue line wing.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 137
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4882-4891 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed study of the output energy characteristics of the pulsed, optically pumped 4.3-μm CO2 laser is described. The predictions of a rate-equation model representing the laser dynamics are shown to be in good agreement with experiment over a wide range of operating conditions. The factors which control the performance of the laser are identified, and the optimum operating conditions for maximum output energy are discussed. Output energies of 15 mJ/pulse and peak powers of 100 kW/pulse have been obtained from an 88-cm-long by 11-cm2-aperture discharge. Scalability of the pulse energy to several hundred mJ using available pump pulse energies is shown to be feasible.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 138
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4879-4881 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The light scattered out of multimode optical waveguides formed by ion exchange from molten salts of silver nitrate was measured in order to clarify the mechanism producing scattering loss. The angular distributions of the scattered light can be explained by the loss originating not only from surface roughness but also from silver ion concentration diffused in the glass. For a relatively thick waveguide of diffusion depth greater than 4.5 μm which was obtained by diffusion time longer than 7 h at 300 °C, it was found that the effect of bulk inhomogeneities is predominant in the air radiation. The correlation length in the direction of beam propogation was estimated to be the order of a wavelength of light.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 139
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4906-4910 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report experimental and theoretical studies of the use of the photorefractive effect in the design of optical limiters. Preliminary results indicate extinction coefficients of at least 98–99% with 1 J/cm2 transmitted before steady state is reached.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 140
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4892-4896 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the design and operation of an optimized version of a Q-switched, mode-locked, and cavity-dumped ruby-laser oscillator. The modulator window is much narrower than that assumed in conventional active mode-lock theory, and is shown to yield much shorter pulses than the latter in cases where the number of round trips is restricted. To allow a high-power pulse (≈1 GW) to evolve in the oscillator, and to allow simple synchronization to a (∼100 ns fixed delay) CO2 laser, a limit of 23 round trips was chosen, but similar limits may be imposed by lasers having short-gain duration as in an excimer laser. Details are given on the single spark gap switching element and Pockels cells, with an analysis of their expected switching speeds, in order to establish the effectiveness of the modulator, as compared to conventional sinusoidally driven active mode lockers. Single pulses of 50–70 mJ are reliably cavity-dumped after only 100-ns delay (23 round trips) with pulse length adjustable from 50–100 ps with ±5-ps stability. Relative timing between the main (CO2) and probe (ruby) pulses allows a measurement accuracy of ±50 ps to be attained.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 141
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4936-4943 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The role of geometric factors in the operation of a modified design of the pyroelectric anemometer is examined. The two major variables were chip thickness d (133 and 205 μm) and the separation between the heater and the measuring electrodes (25≤ΔHE≤250 μm). The overall flow response varied as (flow) 0.48±0.02 for almost four orders of magnitude. No evidence of saturation was observed at either the high or low flow rates. One of the more interesting results obtained was the relative independence of the response at fixed flow rate on ΔHE for d=133 μm. Even for d=205 μm, the response was relatively independent of ΔHE, though some variation was observed.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 142
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4931-4935 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have constructed a micron wavelength acoustic microscope having a novel geometry which accentuates detail in acoustic imaging while providing ease in focusing, enhanced resolution, and the observation of third-order nonlinear products (2F1-F2). Convergent, acoustic beams generated by curved transducers provide very high power densities at the acoustic lens and focus. Oblique acoustic illumination of surfaces gives directionality to the image and the use of a second transducer position, removed from the specularly reflected beams, reduces undesired nonlinear interaction in the intervening liquid (water) medium. Increased resolution and sharper images are obtained by observing the second harmonic via the difference frequency (third-order product 2F1-F2) which falls back into the initial frequency range, ∼600 MHz. However, significant effects due to nonlinear interaction identified with the object have not yet been observed.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 143
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4916-4930 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: As a continuous-wave signal builds up in an energized laser dye solution, the lifetimes for the excited state of the molecules become shorter than their orientational relaxation time. Physical consequences of the phenomomenon are considered for two extreme situations—transmission through pure mobile and pure rigid media continua, respectively. The dye is treated as a linear oscillator and spectral properties are assumed to be unchanged between the media. Two problems are examined, namely signal propagation and the extraction of energy at a point in the medium for a number of configurations of pump and signal polarizations, transverse or longitudinal excitations. Signal gradients and steady-state conversion efficiencies are presented algebraically and graphically. A mobile medium has one of the steepest gradients, the largest energy storage, and one of the highest conversion efficiencies. Nevertheless, performance of a transversely excited, single-pass amplifier for the commonly used configuration where pump and signal are plane polarized and have a shared polarization axis (Configuration C) shows little difference between rigid or mobile media, according to this analysis. For a rigid Configuration C, only about 21% of the dye molecules carry most of the signal load, in contrast with a mobile medium where all molecules work equally, and such a restricted distribution undergoes rapid turnover of its excited state. Twisting of the signal plane of polarization in a dye amplifier is confirmed.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 144
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4944-4949 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A resistor-capacitor analog heat transfer model is used to calculate the thermal pyroelectric anemometer (PA) response. This is compared to the data of Frederick et al. [J. Appl. Phys. 57, 4936 (1985)] in the accompanying paper. Steady-state gas flow conditions are assumed, and the calculations apply in the regime where the transit time of the gas over the device is much less than the time period of the heat input from the ac-driven heater. Since the pyroelectric substrate is thin, the analysis is simplified to one dimension and excludes edge effects, heat losses due to the support, and thermal radiation. Further, no temperature difference is assumed at the interface between the gas and substrate, i.e., no temperature jump. The calculated dynamic response is in excellent agreement with measurements. However, the calculated level of response is 240 μV at a gas flow of 10 m/min, much lower than the 570 μV measured by Frederick et al.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 145
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4950-4953 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The evolution and distribution of temperature have been studied theoretically for an idealized model of a four-ball wear-test apparatus which can be used to study macroscopic effects of surfaces interacting under frictional conditions. The finite-difference method was used to solve the coupled equations of heat generation, conduction, and cooling. Parameters were chosen to represent two types of material, a typical steel with relatively good thermal conductivity, and a ceramic with relatively poor thermal conductivity. Two values for the coefficients of friction were used to simulate dry and lubricated surfaces. A significant dependence on thermal conductivity was found.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 146
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4968-4972 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Near-resonance-Rayleigh scattering is used as a space-time-resolved density probe on a resonant laser-driven barium plasma. Feasibility of this technique was investigated. Comparison to other methods such as absorption technique is made and found to be consistent.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 147
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4954-4961 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Monte Carlo simulation technique has been used to model the cathode fall region of a glow discharge under the influence of a nonuniform electric field and a transverse magnetic field. It has been shown experimentally that a magnetic field can serve as an effective means for reducing the growth of discharge instabilities. The stabilization mechanism involves the dispersion of localized charged particle perturbations over the discharge area in a time less than that required for an instability to fully develop. The results of this paper provide a deeper insight into the magnetic stabilization technique, which has the potential of increasing the power output of a wide variety of gas lasers.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 148
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4962-4967 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The steady-state fluid equations for plasma production and transverse flow in an ion beam with a step-function density profile are solved exactly in both slab and cylindrical geometries. The beam edge is treated as both a neutral and a non-neutral sheath. In the former, the beam density falls from its value inside the beam to zero in a distance much greater than a Debye length, while in the latter the Debye length is much greater than the beam falloff distance. Physical solutions with plasma density profiles which decrease monotonically from the beam center are shown not to exist for negative ion beams with a non-neutral sheath.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 149
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4973-4980 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Centrifugal separation of isotopes occurs in a magnetized, rotating column of plasma. An analysis is presented of the dependence of the net enrichment of a given isotope upon the radius of the column, its rotation frequency, and the number of successive stages of separation. Three different cases are considered: 48Ca, in which the heaviest isotope is collected at the outer edge of the column; 203Tl, in which the lighter isotope is collected in the core of the column; and 68Zn, in which an intermediate-mass isotope is collected in an annular region within the column. For the particular case of Gaussian radial distributions of the isotopes in the rotating column, a multifluid model of the enrichment reveals that staging provides no benefit for collection of the heaviest isotope. For collection of the lightest species in the core, multistaging of the enrichment significantly reduces the required column radius and rotation frequency. Experimental measurements in a laboratory-scale centrifuge yielded typical values for the rotation frequency and column radius. With these values it is shown that vacuum-arc centrifuges are capable of providing enriched stable isotopes of use in nuclear physics and nuclear medicine.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 150
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4981-4990 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model which incorporates the influence of electrode surface conditions, gas pressure, and charging rate on the voltage stability of high energy spark gaps is discussed. Experimental results support several predictions of the model; namely, that increasing the pressure and the rate of voltage charging both produce a broadening of the self-breakdown voltage distribution, whereas a narrow voltage distribution can be produced by supplying a copious source of electrons at the cathode surface. Experimental results also indicate that two different mechanisms can produce this broadening, both of which can be taken into account with the use of the model presented. Further implications of the model include changes in the width of the self-breakdown voltage probability density function as the primary emission characteristics of the cathode are modified by, for example, oxide or nitride coatings and/or deposits from the insulator. Overall, the model provides a useful and physically sound framework from which the properties of spark gaps under a wide variety of experimental conditions may be evaluated.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 151
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4996-5005 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of 150-keV arsenic ion implantation on polydiacetylene crystals are characterized with respect to modifications of structural, electrical, and optical properties of the parent materials. Structural modifications are studied by means of Rutherford backscattering spectrometry, Raman spectroscopy, and x-ray photoelectron spectroscopy. It is demonstrated that at low and intermediate fluences of implantation, structural changes are mainly associated with effects of the ion beam on the polymer side groups. dc resistivity measurements were performed in the 20 °K〈T〈290 °K temperature range and the results yield an exponential behavior of the resistivity ρ(T)=ρ0 exp(T0/T)m with the temperature-dependent exponential factor 1/2〈m〈1 where m → 1 at higher temperatures (T〉190 °K) and m → 1/2 at lower temperatures (T〈80 °K). Absorption spectra in the visible range from ion-implanted thin crystalline films are also presented and discussed.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 152
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4991-4995 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A 2 (1)/(2) -dimensional, cylindrically symmetric particle in cell program is used to simulate the interaction of a plasma with a positively biased disk covered by a dielectric material (Kapton). Several runs using different combinations of bias voltages and secondary electron yields are discussed. Special attention is paid to the role of the secondaries as the dielectric surface changes from a negative potential to become increasingly positive. This is termed the "snapover'' process. The contribution due to secondaries is examined by plotting the distribution (number versus position) of the particles emitted by the impacting on the dielectric. These plots show that secondaries are drawn back into the dielectric as well as the conductor in the case of snapover. Mechanisms and experimental implications for these particular distributions are discussed.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 153
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5006-5010 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogen and helium implantation into GaAs, LiNbO3, and other crystals has been shown to produce planar or channel waveguides via defects/damage and/or carrier removal or compensation. We have measured implanted depth distributions of 1H, 2H, and 4He in GaAs and LiNbO3 as functions of ion energy, ion fluence, substrate temperature, and annealing temperature using secondary ion mass spectrometry. We have studied the defect depth distribution for hydrogen-implanted GaAs by transmission electron microscopy. We have determined the lateral spread of 1H and 2H ions implanted into GaAs by varying the angle of implantation; this relates to the increase in width of closely spaced parallel channel waveguides made using patterned masks.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 154
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5011-5016 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An electrostatically focused, multistage electron gun using a cold (field emission) cathode has been developed for use in a free electron laser. This gun produces a 1.1-kA, 2.0-MV electron beam with a normalized emittance εn(approximately-equal-to)38×10−3 (π cm rad), and a brightness of 74 kA/cm2 rad2. The measured brightness is almost two orders of magnitude higher than that found in most rf linacs using conventional thermionic cathodes, and is comparable to that achieved using electron guns immersed in strong guiding magnetic fields. The emittance and brightness have been studied as a function of cathode material, surface finish, and the electric field strength at the cathode surface.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 155
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5017-5023 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Some of the processes involved in thin film nucleation and growth were simulated by means of a digital computer. The main conclusions drawn from the simulation results are (1) Because of the random nature of the processes involved, a large variation in results is obtained. (2) Upon impingement, clusters are formed up to a coverage of ca. 0.2, and from there on growth of existing clusters, rather than formation of new ones, takes place. (3) Surface migration is responsible for the formation of most of the clusters at coverages smaller than 0.1, whereas at higher coverages most clusters are formed upon impingement. (4) Surface migration accelerates the growth and causes reduction in cluster density. (5) Reevaporation slows the growth and reduces the cluster density dramatically.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 156
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5024-5027 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Expressions for the ohmic lines in the IV characteristic for one-dimensional in-line geometry Josephson junctions as well as for two-dimensional cylindrical Josephson junctions are presented. The expressions are compared to numerical simulations of Josephson junctions using the fluxon model; the ohmic line in this model corresponds to a continuous generation at the boundaries of fluxons and antifluxons, being pairwise annihilated in the middle (due to damping). For large currents the results fit to the expressions. Further we find that the fluxon generation in most cases were simply periodic; however, depending on the initial conditions we find 1/2 and 1/3 harmonic generation.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 157
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5028-5035 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A turn-on delay, during which the output voltage of a Josephson logic circuit is very small, is of prime interest for the design of high-speed Josephson digital integrated circuits. We have derived an analytical formula for the turn-on delay of the current-injection logic circuits, which is in good agreement with computer simulations. Analysis of the circuit equations shows that the nonlinear inductance of a current-summing Josephson junction plays an important role for the turn-on delay. Dependences of the turn-on delay on circuit parameters and operating conditions are calculated. For parameter values typical of 5-μm current-injection circuits, the turn-on delay is on the order of 10 ps. The turn-on delay and operating margin are compared in various types of current-injection logic circuits. The higher sensitivity of the threshold gate current to the input current is found to be desirable not only to reduce the turn-on delay but to operate in a wide margin.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 158
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5048-5055 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The emission of electrons, photons, and positive ions was monitored during three-point bending, compression, and fast compression (impact loading) of single-crystal pentaerythritol tetranitrate (PETN). The emission appears to be fracture mode dependent with negligible emission from cleavage-type fracture and very intense electron emission accompanying impact. Possible causes of this enhanced emission are discussed in terms of shear effects and frictional grinding of the crystal fragments. Evidence of a microdischarge (electrical breakdown between fracture surfaces) during impact loading of the crystals is presented.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 159
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of the optical absorption coefficient, the particle size, the chopping frequency, and the length of the gas phase on the recently observed enhancement of photoacoustic signals in the presence of saturated vapors of ether has been investigated. Amorphous selenium has been used as the standard. The particle size plays a crucial role in understanding the enhancement as a function of optical absorption coefficient or chopping frequency. The enhancement is more when the optical absorption length is greater than particle size. The frequency dependence of the photoacoustic signal in the presence of ether is different from that in air when the thermal diffusion length of the solid is greater than the particle size. A qualitative interpretation of the results based on the "adsorbed'' piston effect has been made.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 160
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5036-5042 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Copolymers of vinylidene fluoride–trifluoroethylene P(VDF-TrFE) exhibit large piezoelectric and pyroelectric effects. In addition to the most common application of the pyroelectric effect (radiant detection) it is possible to convert heat directly into electrical energy by pyroelectric conversion. This study reports the first pyroelectric conversion cycle to be measured for the copolymer P(VDF-TrFE). It is found that standard isothermal D-E hysteresis loop measurements are not necessarily accurate predictors of pyroelectric conversion performance for this material. Conduction effects are found to obscure the observation of conversion cycles in most cases for the presently available materials. In spite of these difficulties, a conversion cycle was measured whose output electric energy density was 30 mJ/cm3. The output density is 15 times larger than any other polymer previously measured .
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 161
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5056-5065 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray photoelectron spectroscopy spectra measured on copper sulfide (CuxS) films showed that a thin surface reaction product containing Cu in the +2 valence state was formed on CuxS films exposed to air for 46 h at 40 °C and 90% relative humidity. An entirely different CuxS surface reaction product layer was formed in dry air at 170 °C for 30 min and it contained sulfur in the +6 valence state. The copper (Cu) valence state in CuxS was not found to be +2 even when the x value was less than 1.9. When the argon sputter-cleaned surface of CuxS or CuxS/CdS films was exposed to room-temperature air for 10 min, cadmium (Cd) atoms appeared on the CuxS surface. X-ray powder diffraction patterns showed that CuO and CdS reacted at 500 °C in flowing nitrogen to form Cu2S and CdO. This cation exchange between CdS and copper oxide may explain the surface Cd on the CuxS films. The standard free energy of reaction between CuO and CdS is positive while that between Cu2O and CdS is negative. These results indicate a method for stabilizing CuxS/CdS solar cells against degradation.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 162
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5066-5068 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Near surface properties are reported for ZnO varistors irradiated with high-intensity pulses from both KrF excimer and CO2 lasers. Electrical, optical, and Rutherford backscattering measurements reveal that a thin conducting film is formed by pulsed-laser heating of a varistor surface. The conductive film is evaluated as a varistor electrode.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 163
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5081-5083 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to describe exactly the renewal epochs of nonsimple Markov processes, a new experimental method has been developed which allows one to draw out of the sequence data which can be directly compared with exact formulas. The analyzed process has been obtained by superimposing an ordinary Poisson distribution with periodic signals when the whole train is processed by a device introducing a finite width (dead time) of nonextended type. Excellent agreement with the theoretical predictions has been found.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 164
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5087-5088 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rigid wall impact experiments were conducted on alumina tiles, instrumented with in-material Manganin gauges, in order to determine the magnitude of the dynamic yield strength of these ceramics. We found that the amplitude of the wave is very near the static yield strength. Thus, we conclude that these materials are not rate sensitive and that their increased strength in planar impact experiments is due to their pressure dependence rather than rate effects.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 165
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5084-5086 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The variation of the yield strength with shock pressure of Manganin foil gauges can be determined by analyzing their dynamic calibration curve. The analysis is based on the assumption that the material behaves as an elastoplastic work-hardening solid and on the general expression for the resistance change of Manganin which we derived in previous works. It is found that the strength increases by a factor of about 3.5 for shock stresses in the range of 0–160 kbar.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 166
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5093-5094 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Beryllium (Be) thin films with superconducting transition temperature (Tc's) up to about 6 K can be grown on room-temperature substrates using ion-beam sputtering. In contrast to the evaporation-deposited Be grown on a liquid-helium-cooled substrate, which is also a superconductor, the ion-beam-sputtered Be films show such high thermal stability that the Tc's exhibit no change by room-temperature annealing for three months.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 167
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4721-4726 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The isothermal vapor-phase-epitaxial (ISOVPE) growth of device-quality HgCdTe layers on both CdTe and CdTe/Al2O3 substrates has been demonstrated. The material and device properties on both types of substrates have been studied and compared with reported values for HgCdTe grown by other techniques. The as-grown ISOVPE Hg1−xCdxTe (x(approximately-equal-to)0.3) epilayers are always p type with carrier concentrations of ∼5×1015 to 3×1016 cm−3 and mobilities of ∼230–260 cm2/V s at 77 K. The temperature and compositional dependence of electrical properties of ISOVPE Hg1−xCdxTe are somewhat different from those of liquid-phase epitaxy (LPE) and bulk HgCdTe. In particular, the acceptor ionization energy, EA =7 meV, is about half that obtained in midwavelength infrared LPE or bulk HgCdTe, and nearly independent of composition x. The R0A product of a representative photodiode (λc (approximately-equal-to)4.65 μm, 77 K) is 2×106 and 4 Ω cm2 at 77 and 195 K, respectively, with comparable device qualities seen on both CdTe and CdTe/Al2O3 substrates.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 168
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4732-4737 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The chemical and electrical characteristics were measured of 100-keV Si+-implanted GaAs at doses of (6 – 10)×1012 cm−2 after rapid thermal annealing (RTA) for times of 5–40 s at temperatures between 850 and 975 °C. Optimal conditions were 5 s at 930 °C in either Ar or Ar–H2 atmospheres. Purity of the gas ambient was critical at the higher temperatures. Surface degradation was minimal for face-to-face annealing, as compared to exposed SiO2 encapsulated surfaces. Essentially identical electrical characteristics were obtained by the preferred RTA conditions as compared to 30-min conventional furnace annealing under optimum conditions at 850 °C using the controlled atmosphere technique. The markedly different RTA annealing times with comparable electrical characteristics are attributed to the differences in the host lattice damage recovery resulting from heat transfer and the actual duration to reach the desired anneal temperature.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 169
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4738-4741 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The time evolution of the temperature profile during cw laser processing is calculated including the effects of melting using computer simulation. Results, presented for single-crystal silicon irradiated by an argon ion cw laser, show that high scanning speed can result in a non-steady-state situation for the temperature rise. In this case the maximum temperature and melt depth become functions of the dwell time and also less sensitive to the incident laser power, as a result of which scanning speed can be effectively used to control melting process induced by cw laser. Experimental results presented support the calculated dependence of the maximum melt depth on the laser power and scanning speed.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 170
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 157-158 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Co-Al2O3 composites were prepared by dual electron beam evaporation. When the volume fraction of cobalt is lower than 0.07, the metal is almost completely dispersed as ions in the amorphous oxide matrix. Due to the local ordering of amorphous aluminum oxide, absorption bands caused by crystal field effects are seen in the visible wavelength range. The features of the spectra are consistent with cobalt ions located in tetrahedrally coordinated sites in the oxide. Thus optical absorption measurements can be used to determine whether the metal is present as ions or as particles in various cermet materials.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 171
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 161-161 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 172
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 159-160 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cross sections of the patterns fabricated in (100) GaAs by 100-keV gallium focused ion beam have been studied using a scanning electron microscope (SEM). The probe size of the ion beam is 0.1–0.15 μm at the current of 100 pA. The etched depth becomes saturated at the high dose region (about 5.0×10−6 C/cm) because of the redeposition effect. The pattern profile becomes asymmetric if it is made up of several adjacent lines perpendicular to the beam scanning direction due to the redeposition effect and the increase of sputtering yield for each scan, which is caused by the change of ion beam incident angle. These effects can be eliminated by the use of multiwriting method.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 173
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 18-26 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper the classical theory of the transverse optical klystron is presented. The gain is obtained by solving analytically the Vlasov equation which governs the evolution of the electron beam along the undulator magnet. The initial energy distribution of the electron beam is assumed gaussian. Both the small signal and the saturation regime are investigated.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 174
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1-5 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The resolution of Thomson spectrometers is examined. Charge, mass energy, and momentum resolutions are found as functions of collimation parameters and field strengths. The results are generally applicable to all Thomson spectrometer systems. In conjunction with this analysis, a compact Thomson spectrometer with high resolving power is described.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 175
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 270-275 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The silicide formation with a titanium film deposited on 〈100〉 single-crystal silicon, has been studied by using nuclear microanalysis, x-ray diffraction, and transmission electron microscopy. The presence of interfacial defects and their possible role in the early stages of the reaction has been evidenced. The phase composition was dependent on the annealing temperature and time: at 550 °C only TiSi2 is observed; at higher temperatures (〉600 °C), a thin TiSi2 layer at the interface is again observed, but Ti-rich silicides grow on top of this layer by increasing the annealing time. For longer annealing times, all the reacted layer progressively transforms into TiSi2. The amount of reacted silicon grows with a (time)1/2 law; the activation energy of 1.8 eV reported for the growth of TiSi2 onto amorphous Si may be appropriate even in this case. The reaction proceeds at a rate of one order of magnitude higher than previously reported for reaction between silicon and an oxygen saturated titanium film. The kinetics seems to be controlled by silicon diffusion through the TiSi2 interfacial layer.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 176
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 264-269 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A pulsed proton beam was used to anneal Ir and IrxV100−x thin films deposited on Si single crystals. Compound phases were produced by local melting of the metal-Si interface. Phase identification was carried out by x-ray diffraction; while component distribution was determined by Auger electron spectroscopy and Rutherford backscattering spectrometry. The morphology of the silicide layers was examined using transmission electron microscopy; and Schottky barrier heights were determined by current-voltage measurements. At intermediate deposited energy densities (∼0.5 J/cm2) a controlled interfacial reaction was observed. In the case of Ir/Si, amorphous IrSi as well as polycrystalline IrSi and Ir2Si3 was detected in the reacted region. For the codeposited IrxV100−x film, with x=80 and 50, the interfacial layer reacting with the Si substrate maintained the Ir : V ratio of the as-deposited film. This is in contrast to the case of furnace annealing where preferred accumulation of Ir is observed.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 177
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 287-292 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep defect states in p-type silicon crystals induced by plastic deformation at 750 °C are investigated by means of deep level transient spectroscopy. Several kinds of hole traps having different energy levels within the band gap are introduced simultaneously by deformation. The main three are denoted DH(0.24), DH(0.33), and DH(0.56). The hole concentration versus temperature relations in plastically deformed p-type silicon crystals measured in a previous paper are interpreted in terms of the defect levels found in this work. Annealing behaviors of the defect states are followed and are compared with those induced by electron irradiation. DH(0.33) is proposed to be due to jogs and kinks while DH(0.24) and DH(0.56) to agglomerations of point defects that result from dislocation debris.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 178
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 293-301 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep levels in PbI2 have been investigated by photoinduced current transient spectroscopy for the first time. By separating the signal processing from the data acquisition it was possible to analyze the transient using different methods, in particular a four-gate treatment which allows to clear the detrapping current of uncontrolled changes of the recombination lifetime of thermally released carriers. Three hole traps located at 0.30, 0.47, and 0.66 eV have been detected and the corresponding thermal capture cross sections evaluated. In addition a photomemory effect has been evidenced. The main features of the excited state of the crystal are increased photosensitivity, neutralization of hole traps, and residual conductivity. It is believed that macroscopic recombination barriers acting as minority carrier traps under optical excitation are responsible for this phenomenon. The presence of these extended defects is probably related to the layered structure of PbI2. An energy model is proposed on the basis of which the observed logarithmic time dependence of the photosensitization at room temperature can be predicted. The model allows also to give a plausible interpretation for all the characteristic features of the photomemory effect and for various results previously reported by other authors.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 179
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 302-309 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: p-channel Si-gate metal-oxide-semiconductor transistors of very thin oxides are used for the study of quantum yield of electron impact ionization in silicon. Electrons are injected into silicon from the polysilicon gate by tunneling to give an approximate δ-function energy distribution. This energy distribution is preserved when electrons pass through the oxide by direct tunneling. Using the carrier-separation properties of the induced junction, we are able to experimentally measure the number of generated electron-hole pairs as a function of the incident electron energy, up to 5 eV. Our results are found to be in excellent agreement with recent theoretical calculations of quantum yield. Beyond 5 eV, the interpretations on the experimental data are difficult due to the broadening of the incident electron energy distribution. This broadening effect is caused by strong scattering in the oxide when electrons tunnel by the Fowler–Nordheim (F–N) process. It is observed that the average energy of those electrons tunneled by the Fowler–Nordheim process becomes a function of oxide field, relatively independent of the oxide thickness.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 180
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 322-324 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose a new model for alloy scattering in semiconductor alloys in which the alloy scattering potential is allowed to have an energy dependence which is calculated from the band structures of the components. At low electric fields this model reduces to the conventional model based on electronegativity differences of the components. At high fields where the electron distribution function is shifted to higher electron energies, our model leads to reduced alloy scattering. This in turn leads to a reduction in the threshold fields and an increase in peak velocities. This model is applied to In0.53Ga0.47As and the results thus obtained are compared with the available experimental data.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 181
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 325-329 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The aim of this paper is to formalize thermoelectric power in terms of a model of long-range fluctuations in potential previously developed in numerous papers. We apply this model to the electrical data on silicon-on-sapphire films taking account of the fact the conduction takes place exclusively in a degenerate transition layer of the film at the Si-Al2O3 interface.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 182
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 330-332 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Shubnikov–de Haas oscillations in the magnetoresistance were observed in n-type, (111)-oriented PbTe films doped with approximately 0.25 at. % indium. Analysis of the data led to a Dingle temperature of 9±1 K and a transverse effective mass of 0.049±0.0006 me with a carrier concentration of 7.0×1024 m−3. It was found that the substrate-induced strain caused significant carrier transfer to the valley with main axis perpendicular to the film plane. Unexplained frequencies observed may indicate the occurrence of a phase transition.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 183
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 333-337 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe and Cr doping of liquid-phase epitaxial In0.53Ga0.47As grown at 650 °C on InP substrates have been investigated. Varying amounts of high-purity Fe and Cr have been added to the growth melt. The resistivity of Fe-doped layers increases with increase of Fe added to the melt, and layers with ND−NA as low as 2.0×1012 cm−3 can be grown consistently. From analysis of temperature-dependent Hall data on conducting Fe-doped samples, the Fe acceptor ionization energy is found to be 0.46 eV. No additional feature is seen in the 4 K band-edge photoluminescence spectra of Fe-doped layers. Cr doping seems to produce donorlike behavior and the electron concentration increases monotonically with increased addition of Cr to the melt. An additional peak, separated from the band-gap energy by 24 meV is seen in the photoluminescence spectra of Cr-doped samples. It is believed that Cr itself, or a complex defect involving Cr is responsible for the formation of a donorlike center.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 184
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 338-344 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoconductance transient response in polycrystalline silicon has been studied theoretically and experimentally. Shockley–Read–Hall statistics are used to describe the emission and capture processes at the grain-boundary traps. Under appropriate conditions, the minority carrier capture and emission time constants of the grain-boundary trap can be directly obtained from the photoconductance transient response. The photoconductance method is therefore useful for studying grain-boundary deep level states. The special case when a focused laser spot is employed is also discussed. From the experimental data obtained from large-grain Wacker polycrystalline silicon, we have discovered a donor-like level at 0.48 eV below the conduction band with a concentration of 2×1010 cm−2. The electron (minority carrier) lifetime is found to be about 6×10−10–10−9 s.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 185
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 345-350 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dc electrical properties of a series of high purity GeO2 glasses fused and equilibrated at various temperatures (Tφ) in air were measured. Tφ ranged from 1200 to 1690 °C. The observed changes are not correlated changes in concentration of any of the impurities as determined by neutron activation analyses or IR measurements of OH concentrations. The resistivity was found to obey an Arrhenius function with enthalpy of activation of approximately 1.0 eV for all Tφ's except for Tφ =1200 °C. The charge carrier was concluded to be the Na+ ion. The mobility of the Na+ ion was calculated and was found to be a function of Tφ. We suggest that the change in Tφ results in a change in the configuration coordinates of the average interstitial sites through which the Na+ ion moves. This change results in differences in the vibrational energy structure of the interstitial sites. These differences are manifested in the entropy of activation. With changes in the entropy of activation, the preexponential term changes, producing the variation in mobilities which is observed.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 186
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 355-358 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The elecstronic properties of n-type CdIn2Te4 crystals were investigated. The mobility and carrier concentration were measured using Hall techniques. I-V and C-V measurements were performed on Al/n-CdIn2Te4 Schottky barrier devices. The I-V data are interpreted in terms of space-charge-limited currents. The dominant electron trap level has been determined to be 0.21 eV below the conduction band. The barrier height was found to be approximately 0.65 eV.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 187
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 351-354 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion implantation of Si and Se donors in In0.53Ga0.47As is reported. Both room-temperature and elevated temperature (200 °C) implants are performed. Rapid thermal annealing as well as conventional furnace anneals have been used. Both species yield relatively shallow profiles with peak electron concentrations ∼1×1019 cm−3 and with sheet resistance less than 20 Ω/sq. Our results indicate that elevated temperature implants are effective in reducing implant damage and are important for heavy ions like Se+ to achieve high activation and mobility.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 188
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 377-383 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The theory for obtaining mobility and carrier concentration profiles by the Hall-effect, magnetoresistance, and capacitance-conductance methods is developed in the relaxation-time approximation. This theory is then applied to semiconductors in which a Schottky barrier is used to control a depletion region. Particular emphasis is given to field-effect transistor structures which are ideally suited for geometric magnetoresistance measurements. A unique feature of the present model is the correction for finite gate (Schottky-barrier) current, which can be very important under forward-gate-bias conditions. The ability to use forward-bias makes the near-surface region more accessible. Also, parasitic resistance effects are treated. We apply these results to GaAs conducting layers formed by direct implantation of 4×1012/cm2, 100-keV Si ions into Cr-doped GaAs.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 189
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 384-392 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Indium tin oxide films have been grown by rf sputtering at various Ar-O2 mixtures, at low substrate temperatures (200 °C), and deposition rates (25 A(ring)/min), followed by post deposition annealing (at 350 °C) in different ambients (O2, N2, and cracked ammonia). Influence of a reactive gas (oxygen) on the sputtering rate of a metallic (indium/tin) alloy target has been investigated. Growth parameters and annealing conditions have been optimized. The films were characterized by electron and x-ray diffraction, scanning electron microscopy, and transmittance as a function of wavelength. The effect of heat treatment in various environments on the structural, electrical, and optical properties has been investigated. Effect of a new annealing ambient, cracked ammonia (reducing atmosphere), on the reactively sputtered oxide films is being reported for the first time. Cracked ammonia was found to be very effective and cheap and resulted in films of high quality (electrical and optical) with good structural properties. Films with low sheet resistances (Rs=30 Ω/(D'Alembertian) at film thicknesses of 800 A(ring) and Rs=8.5 Ω/(D'Alembertian) at film thicknesses of 5000 A(ring)) with high visible transmission (∼95%) have been achieved by annealing in cracked ammonia.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 190
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 393-399 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results of x-ray and 60Co-γ irradiations on differently processed metal-oxide-semiconductor (MOS) capacitors are carried out. From experiments at 80 K, the field-dependent charge yield fH(E) and the ionization coefficient K are found. In addition, a simple method is described for calculating the hole trapping factor A. For this purpose, just the measured values of the midgap voltage shifts after irradiation at 80 K and room temperature (RT) are used. The investigations of oxide charge buildup Qfr and interface state generation Dit by x-ray irradiation at RT indicate that samples subject to high-temperature (HT) annealing exhibit a more sensitive interface and a less sensitive bulk of the oxide than those not subject to this step. This is found to be in contrast to results of 60Co-γ irradiations at RT. In this case, samples subject to HT annealing show higher sensitivities of the interface and the oxide bulk than corresponding samples without HT annealing. Independent of technology and oxide thickness, the oxide bulk and the interface are more sensitive to x-ray irradiation than to 60Co-γ irradiation. The dependency of the midgap voltage shift, the interface state density and the hole trapping factor on oxide thickness dox is shown. For both x-ray and 60Co-γ irradiation the same relationships ΔUMG∝dnox; ΔDit∝dn−1ox; A∝dn−2ox (n=2.6) are found (ΔUMG is the midgap voltage shift). Differences between x-ray and 60Co-γ irradiations occur in the coefficients of the ΔUMG, ΔDit, and A vs dox proportionalities.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 191
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 400-410 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline films of CdTe have been deposited on graphite substrates, and homoepitaxial films on single-crystal CdTe:P substrates, with hole densities as high as 1.5×1016 cm−3 without intentional doping of the films, using close-spaced vapor transport. The dependence of hole density in the films on the properties of the source, the properties of the substrate, the growth rate, and the substrate temperature, indicates that the doping of the films is the result of a complex interaction between out-diffusion of mobile impurities (if present) from the substrate and intrinsic defects. The capacitance-versus-voltage-indicated hole density decreases slowly with time under a Schottky barrier, but not at a free film surface or under a CdS/CdTe heterojunction. CdS/CdTe solar cells have been prepared using these films, with solar efficiencies greater than 6%. The junction properties of CdS/CdTe heterojunctions are compared with those of In/CdTe Schottky barriers as a function of temperature; transport is dominated by tunneling below room temperature and by interface recombination above room temperature.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 192
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 411-414 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental results of surface mobility (effective mobility) in n-channel metal-oxide-semiconductor field-effect transistors subjected to high electric field stress are presented. The electron mobility limited by Coulomb scattering is extracted from the experimental data comparing the measured effective mobility before and after the stress. The low-temperature data (T=77 K) are discussed in terms of the Stern–Howard two-dimensional Coulomb scattering theory in the electric quantum limit approximation.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 193
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 418-425 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two experimental observations are reported concerning the degradation of the Si–SiO2 interface during electron injection in metal-oxide-semiconductor structures. First, the generation of the interfacial positive charge during avalanche injection can be strongly inhibited by employing magnesium, instead of aluminum, as gate metal, or enhanced by employing gold. This correlates with the different work functions of the metals. Second, during negative bias high-field injection in Al-gate capacitors with thin oxides ((approximately-less-than)100 A(ring)), a threshold in gate voltage, of 7–8 V, is found for the generation of the positive charge. Both observations are consistent with a model which assumes that holes generated in the anode by hot electrons, via emission of surface plasmons, are injected into the SiO2 and are subsequently trapped at the Si–SiO2 interface. Other possible mechanisms are also discussed.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 194
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 575-580 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Monte Carlo calculations of the photo and Auger electron production by a monochromatic x ray of Al Kα have been performed to study the effect of their diffusion in a 1.0-μm polymethyl methacrylate resist film on replicated patterns both with and without the Si substrate. Based on both the calculated spatial distribution of the absorbed energy density and the solubility rate for mixture developers of methyl isobutyl ketone (MIBK) and isopropyl alcohol (IPA), investigations were carried out on the x-ray resist sensitivity, the ultimate resolution, and the mask contrast effect on developed profiles. Typically, the ultimate resolution was found to be 1000 A(ring) with MIBK and to be 400 A(ring) with MIBK : IPA=1 : 3. There was no significant influence of the Si substrate on the developed patterns.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 195
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 581-590 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs field-effect transistors (FETs) exposed to 40 α/sec for about 60 sec in the gate region revealed burnout from under the gate to both the drain and source. To explain this result, we show by using a 2D numerical FET simulation that a single event, particularly normal to the gate, has all the harmful electrical and thermal transients as that of a reverse gate-voltage pulse or positive drain-voltage pulse. The latter two are well known to initiate burnout failure mechanisms in GaAs FETs, depending on duty cycle and peak power applied. The onset of burnout due to a succeeding single event may be further aided by the ionization-enhanced outdiffusion of deep-level traps to the active channel during a series of single events. The experimental data, principally from SEM analysis and degradation of I-V characteristics, seem to support the thermal runaway burnout mechanism proposed in this paper. Other mechanisms previously suggested are either ruled out or deemed inadequate. A high-fluence radiation-hardened structural FET design is suggested.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 196
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 600-603 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used a systematic search to determine all the possible transition-metal silicides that are geometrically lattice-matched to either the (100), (110), or the (111) face of silicon. A short table with the best possible matches is presented here, and a more comprehensive table including slightly worse matches is deposited with the editor.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 197
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 604-606 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The carrier removal rates and the minority carrier diffusion length changes due to 1-MeV electron irradiation have been measured for n- and p-type GaAs single crystals. Initial carrier concentration and conductivity-type effects on the electrical properties in the irradiated GaAs are clarified. These results can be well explained by taking into account the electron irradiation-induced electron and hole traps identified in previous work.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 198
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 591-599 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has commonly been reported that the energy band gap in heavily doped silicon is smaller than in lightly doped silicon. The very high open circuit voltages recently achieved in metal-insulator-n-type-p-type (MINP) solar cells, in excess of 680 mV (AM1, 300 K), can be used to put constraints upon the magnitude of such band-gap narrowing. It was determined that most recombination in high open circuit voltage MINP cells occurred in the base region. An exact numerical analysis was then performed of the emitter region. To achieve this, a critical review of the literature was undertaken to determine the values of various material parameters in heavily doped silicon. The review of the literature on hole minority carrier lifetimes and mobilities revealed that some recent studies may be seriously in error. The result of the numerical analysis was that most published models of band-gap narrowing, or extrapolations from band-gap narrowing models, are inconsistent with the open circuit voltage achieved in MINP solar cells. The conclusion is that most band-gap narrowing models overestimate band-gap narrowing at the surface of phosphorus doped MINP solar cell emitters by 60 meV or more.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 199
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 607-609 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-intensity quartz-halogen tungsten lamps were used to form platinum silicide films. Platinum films of 42 and 52 nm were evaporated on single-crystal silicon and subsequently processed in a roughing vacuum from 5 up to 20 sec. The electrical characteristics and the microstructure of the silicide films were studied by four-point probe measurements, x-ray diffraction, Auger electron spectroscopy, and Rutherford backscattering spectroscopy. The silicide formation started within the first few seconds, and the reaction was essentially completed after 10 sec. The dominant phase was PtSi, while only a small amount of Pt2Si was detected in the 5- and 10-sec processed samples. The presence of oxygen and carbon in the film and processing ambient did not prevent the rapid silicide formation, although it gave rise to a surface layer composed of silicon oxide and other contaminants.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 200
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 610-612 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transient emission spectrum and spectrally resolved decay rates are reported for room-temperature ZnS:Cu,Pb phosphor powder excited at 365 nm and stimulated at 700 nm with an 8-nsec full width at half maximum laser pulse. The transient emission spectrum contains bands due to the lead intra-atomic transition and the self-activated ZnS recombination spectrum. No emission due to copper is observed. Decay rates do not vary with wavelength and decay curves are not exponential. The data are interpreted using a qualitative model for excitation and transient stimulation in the phosphor.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...