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  • 1
    Electronic Resource
    Electronic Resource
    Thermal stability of Si/Si1−xGex/Si heterojunction bipolar transistor structures grown by limited reaction processing (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1978-1980 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal stability of Si/500-A(ring)-thick Si0.77Ge0.23 bilayers grown on Si by limited reaction processing is studied as a function of Si capping layer thickness. After annealing for 4 min at 850 °C, misfit dislocation spacings increase monotonically with cap thickness from 0.5 μm for an uncapped film to greater than 50 μm for a layer with a 500-A(ring)-thick cap. Thus, an epitaxial Si cap of sufficient thickness prevents significant misfit dislocation formation during this anneal. Experimental observations are reported which indicate that the Si cap enhances thermal stability by inhibiting both dislocation nucleation and propagation. These results are very encouraging since they suggest that high-temperature processing of Si/Si1−xGex device structures may be possible without significant misfit dislocation formation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102138
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  • 2
    Electronic Resource
    Electronic Resource
    Influence of HCl on the chemical vapor deposition and etching of Ge islands on Si(001) (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1862-1864 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: When HCl is added during the growth of Ge islands on Si(001) by chemical vapor deposition, the reduced Ge surface diffusion impedes island development. There is a shift in the relative populations of different island types even when other conditions such as temperature, coverage, and growth rate, are unchanged. The effect of HCl on the net rate of deposition is proportional to the square of the HCl partial pressure, suggesting a surface reaction with the Ge. When larger islands are etched with HCl at high enough temperature, they revert to a shape characteristic of smaller islands, confirming the reversibility of transformations from one island type to another. It has not proved possible to use etching to produce smaller and more uniform islands. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122307
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  • 3
    Electronic Resource
    Electronic Resource
    Oxidation of polycrystalline-SiGe alloys (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 297-299 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline-SiGe (poly-SiGe) films with Ge concentrations ranging from 5% to 30% were wet oxidized with trichloroethane at temperatures ranging from 700 to 1000 °C. For oxidation temperatures ≥800 °C, the oxidation rate of poly-SiGe depends only weakly on the Ge concentration. At 700 °C, the oxidation rate increases with Ge concentration and can exceed that at 800 °C. Rutherford backscattering spectra show that, in samples oxidized at or above 800 °C, Ge is completely rejected from the oxide, resulting in a pileup at the interface and diffusion into the poly-SiGe. At 700 °C, however, Ge is partially incorporated into the growing oxide when layers with high Ge concentration (≥20%) are oxidized. Most of the Ge is still rejected from the oxide and diffuses into the poly-SiGe layer. This behavior differs from that observed during the oxidation of epitaxial SiGe. Our results can be explained by assuming that diffusion of oxidant through the oxide is the rate controlling step. The oxide composition in turn, depends on the degree with which Ge is rejected from the oxide. The Ge removal rate from the interface exceeds that of single crystal films because of the enhanced diffusion of Ge along grain boundaries.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111954
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  • 4
    Electronic Resource
    Electronic Resource
    Pattern sensitivity of selective Si1−xGex chemical vapor deposition: Pressure dependence (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5799-5802 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thickness dependence of selectively deposited Si1−xGex on the oxide pattern defining the deposition is a strong function of the total system operating pressure. The pattern sensitivity is much greater for atmospheric-pressure deposition than for reduced-pressure (10–80 Torr) deposition. Within the reduced-pressure regime, the pattern sensitivity decreases as the pressure is reduced, either for the same GeH4 mole fraction or for the same Ge content in the deposited layer. The observed behavior is consistent with the easier lateral transport of reactive species in the gas phase at lower pressure. Higher HCl mole fractions also decrease the pattern sensitivity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354200
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  • 5
    Electronic Resource
    Electronic Resource
    Ti-catalyzed Si nanowires by chemical vapor deposition: Microscopy and growth mechanisms (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1008-1016 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si nanowires grow rapidly by chemical vapor deposition on Ti-containing islands on Si surfaces when an abundant supply of Si-containing gaseous precursor is available. The density of wires is approximately the same as the density of the nucleating islands on the Si surface, although at least two different types of islands appear to correlate with very different wire growth rates. For the deposition conditions used, a minority of long, defect-free wires form, along with more numerous wires containing defects. Energy-dispersive x-ray spectroscopy shows that the Ti-containing nanoparticles remain at the tip of the growing wires. The estimated diffusion coefficient of Si in TiSi2 is consistent with the catalyzing nanoparticle remaining in the solid phase during nanowire growth. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1335640
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  • 6
    Electronic Resource
    Electronic Resource
    Evolution of Ge islands on Si(001) during annealing (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 1159-1171 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The evolution of the shape and size distributions of Ge islands on Si(001) during annealing after deposition has been studied at different temperatures and effective coverages. The initial distributions of square-based pyramids, elongated "hut" structures, faceted "dome-shaped" islands, and much larger "superdomes" depends on the deposition conditions. During annealing after deposition, the islands coarsen over a limited range of times and temperatures. Those pyramidal-shaped islands that grow transform to faceted, dome-shaped islands as they become larger. Initially dome-shaped islands that dissolve transform to a pyramidal shape as they become smaller during the process of dissolving. Outside of this coarsening regime, the islands can achieve a relatively stable, steady-state configuration, especially at lower temperatures. At higher temperatures, intermixing of Si into the Ge islands dominates, decreasing the strain energy and allowing larger islands to form. At lower and intermediate temperatures, the initial wetting layer is metastable, and some Ge transfers to the islands during the early stages of annealing. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369255
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  • 7
    Electronic Resource
    Electronic Resource
    Heavy metal gettering in silicon-on-insulator structures formed by oxygen implantation into silicon (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2559-2563 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gettering of chromium and copper metal impurities to the damaged regions surrounding an implanted buried oxide has been investigated. Cr tends to segregate to the surface Si-SiO2 interface; only a small fraction moves to the damaged regions surrounding the buried oxide. Cu segregates to the damaged regions more readily; in addition, a large fraction of the implanted Cu moves to a location several micrometers beneath the buried oxide layer. The buried oxide does not appear to stop the movement of the Cu.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335910
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  • 8
    Electronic Resource
    Electronic Resource
    Patterned implanted buried-oxide transistor structures (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 423-426 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal-oxide-semiconductor field-effect transistors have been fabricated with a buried-oxide layer implanted under only the source and drain regions. Tungsten selectively chemically vapor deposited over the polycrystalline-silicon gate electrode limited the oxygen-implanted area and provided a self-aligned structure. The surface of the source and drain regions was raised above that of the channel by the implanted oxide. The buried oxide formed under the source and drain regions joined smoothly with the surrounding field oxide. Some additional oxide was formed beneath the thermally grown field oxide by the implanted oxygen, and significant field oxide appears to have been removed by sputtering during the implantation. A simplified, nonoptimum, transistor-fabrication process produced depletion-mode, n-channel devices which exhibited transistor action.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337667
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  • 9
    Electronic Resource
    Electronic Resource
    Laser scan registration for lateral epitaxy of silicon-on-insulator stripes on silicon substrates (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5262-5267 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An improved technique for seeded laser recrystallization of silicon-on-insulator stripes has been developed using a slanted elliptical beam and a computer-controlled system to register laser scans to alignment marks on the silicon wafer. After the wafer position is automatically determined by searching for alignment marks with a low-power beam, a raster is generated parallel to the device features, and the aligned laser beam is swept across the wafer. The dependence of the defect structure of the recrystallized films on the parameters used for scanning and the resulting thermal gradients are described. With the proper choice of parameters, defect-free, single-crystal silicon films over oxide stripes up to 65 μm wide have been obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335267
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  • 10
    Electronic Resource
    Electronic Resource
    Power absorption during deposition of polycrystalline-silicon in a lamp-heated chemical-vapor-deposition reactor (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3848-3852 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A thermocouple-instrumented wafer was used to monitor the wafer temperature during chemical vapor deposition of a polycrystalline-silicon layer in a lamp-heated rapid thermal processor. The temperature of the oxidized silicon substrate varies by more than 100 °C as the polycrystalline-silicon layer is deposited because the reflectivity of the sample changes with increasing thickness of the deposited layer. Cross-section transmission electron microscopy shows that when the temperature decreases below the polycrystalline-to-amorphous transition temperature during deposition, a phase change occurs in the structure of the deposited film. The change in temperature qualitatively corresponds to the change in reflectivity as a function of silicon film thickness calculated from a simple model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345032
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