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  • 1
    Electronic Resource
    Electronic Resource
    Optical dielectric functions for amorphous Al2O3 and γ-Al2O3 (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3727-3730 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using the classical oscillator model, the optical dielectric functions for amorphous alumina (a-Al2O3) and gamma alumina (γ-Al2O3) thin films prepared by ion implantation and subsequent annealing of sapphire (α-Al2O3) substrates were determined for the first time from analysis of infrared reflection spectra. Two transverse optical modes at 422 and 721 cm−1 were obtained for the a-Al2O3 film while four modes at 357, 536, 744, and 807 cm−1 were identified for the γ-Al2O3 film. Also, the problems involving the analysis of modes with large damping are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341367
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  • 2
    Electronic Resource
    Electronic Resource
    Interferometric measurement of the pressure-enhanced crystallization rate of amorphous Si (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2583-2585 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the pressure dependence of the solid phase epitaxial growth rate of self-implanted Si (100) by using the in situ time-resolved interferometric technique in a high-temperature and high-pressure diamond anvil cell. With fluid argon as the pressure transmission medium, a clean and perfectly hydrostatic pressure environment is achieved around the sample. The external heating geometry employed provides a uniform temperature across the sample. At temperatures in the range of 530–550 °C and pressures up to 3.2 GPa (32 kbar), the growth rate is enhanced by up to a factor of 5 over that at 1 atmosphere pressure. The results are characterized by a negative activation volume of approximately −3.3 cm3/mole (−28% of the atomic volume). These results show a significantly weaker pressure dependence than does the previous work of Nygren et al. [Appl. Phys. Lett. 47, 232 (1985)], who found an activation volume of −8.7 cm3/mole. The implication of this measurement for the nature of the defects responsible for crystal growth is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101056
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  • 3
    Electronic Resource
    Electronic Resource
    Analysis of C films formed on single-crystal Cu by ion implantation and laser annealing (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3485-3491 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-crystal Cu has been ion implanted with C to fluences of 1×1018/cm2 followed by laser annealing with nanosecond pulses from an excimer laser and subsequently etched in dilute nitric acid. Raman spectroscopy, Rutherford backscattering, and electron microscopy have been used to identify the distribution and morphology of the carbon at different stages of sample processing. Polycrystalline graphite and amorphous carbon films are typically produced over a wide range of processing conditions; well-ordered graphite can be formed as well. Small Cu crystallites are seen in areas where the etch lifted the C films off the substrate. However, extensive analysis by Raman spectroscopy and electron microscopy provides no evidence for the formation of the diamond phase of carbon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351425
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  • 4
    Electronic Resource
    Electronic Resource
    Ion Implantation of Optical Materials (1994)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Materials Research 24 (1994), S. 125-158 
    Details
    ISSN: 0084-6600
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.ms.24.080194.001013
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  • 5
    Electronic Resource
    Electronic Resource
    Infrared characterization of UV laser-induced silicon oxide films (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1832-1834 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxygen incorporation and subsequent oxidation of ion-implanted silicon have been performed using repetitive pulsed excimer laser irradiation working in the liquid phase regime. The kinetics of the oxidation and the characterization of the grown SiO2 were investigated by infrared spectroscopy. The origin of the broadening of the Si-O stretching band of these oxides grown from the liquid phase is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100482
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  • 6
    Electronic Resource
    Electronic Resource
    Novel oxidation process in Ge+-implanted Si and its effect on oxidation kinetics (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 520-522 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal oxidation of Si is shown to be substantially affected by the implantation of Ge+ ions. A unique morphology develops during steam oxidation due to the rejection of Ge from the oxide at the growth interface. The Ge pile-up leads to the formation of a distinct layer of almost pure Ge between the oxide and the underlying Si. Oxidation rates are enhanced due to the presence of this film which is shown to increase the interfacial reaction rate. This increase is attributed to a decrease in the binding energy of Si atoms at the interface as a result of alloying with the Ge film. A model is proposed to account for the enhanced oxidation kinetics and is shown to be in good agreement with experimental data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98385
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  • 7
    Electronic Resource
    Electronic Resource
    GaAs nanocrystals formed by sequential ion implantation (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1876-1880 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sequential ion implantation of As and Ga into SiO2 and α-Al2O3 followed by thermal annealing has been used to form zinc-blende GaAs nanocrystals in these two matrices. In SiO2, the nanocrystals are nearly spherical and randomly oriented, with diameters less than 15 nm. In Al2O3, the nanocrystals are three dimensionally aligned with respect to the crystal lattice. Infrared reflectance measurements show evidence for surface phonon modes in the GaAs nanocrystals in these matrices. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361088
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  • 8
    Electronic Resource
    Electronic Resource
    MeV, self-ion implantation in Si at liquid nitrogen temperature; a study of damage morphology and its anomalous annealing behavior (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2081-2086 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The damage formed by 1.25 MeV, self-ions in Si at liquid nitrogen temperature was studied. A dominant feature of the damage for moderate ion fluences is the presence of isolated amorphous regions over the range of the ions. The microstructure of this damage is detailed and formation mechanisms discussed. The amorphous regions are shown to give rise to strain in the surrounding crystal lattice which varies with ion dose in a complicated manner. The annealing behavior of the damage was studied and two distinct, low-temperature stages observed. Different mechanisms are shown to be responsible for each stage including a transient mechanism at 300 °C initiated by the release of defects from damage clusters, and enhanced crystallization of amorphous Si at 400 °C due to lattice stress.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346561
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  • 9
    Electronic Resource
    Electronic Resource
    Ion mixing of III-V compound semiconductor layered structures (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2602-2610 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Compositional disordering of III-V compound superlattice structures has received considerable attention recently due to its potential application for photonic devices. The conventional method to induce compositional disorder in a layered structure is to implant a moderate dose of impurity ions (∼1015/cm2) into the structure at room temperature, followed by a high-temperature annealing step (this process is referred to as IA here). Ion irradiation at room temperature alone does not cause any significant intermixing of layers. The subsequent high-temperature annealing step tends to restrict device processing flexibility. Ion mixing (IM) is capable of enhancing compositional disordering of layers at a rate which increases exponentially with the ion irradiation temperature. As a processing technique to planarize devices, ion mixing appears to be an attractive technology. In this work, we investigate compositional disordering in the AlGaAs/GaAs and the InGaAs/InP systems using ion mixing. We found that the ion mixing behavior of these two systems shows a thermally activated regime as well as an athermal regime, similar to that observed for metal-metal and metal-semiconductor systems. Ion mixing is observed to induce compositional disordering at significantly lower temperatures than that for the IA process. We have compared the two processes in terms of five parameters: (1) irradiation temperature, (2) dose dependence, (3) dose rate dependence, (4) annealing, and (5) ion dependence (including electrical effects and mass dependence). We found that the IM process is more efficient in utilizing the defects generated by ion irradiation to cause disordering. Both the physical mechanism of ion mixing and possible device implications will be discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351079
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  • 10
    Electronic Resource
    Electronic Resource
    Low-temperature mesotaxy of ion beam synthesized ErSi2 (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1853-1855 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High doses (7×1016–1.3×1017/cm2) of 170-keV Er+ ions were implanted into single-crystal Si at an implantation temperature of Ti=520 °C. During Er implantation ErSi2 crystallizes as coherent precipitates within a crystalline Si matrix. During the subsequent annealing at 800 °C a discontinuous buried layer of the single crystalline ErSi2 is formed. Implanted and annealed samples were subsequently reimplanted with 170-keV Er+ ions at 250〈Ti〈520 °C. The second implantation results in a mesotaxial growth of the previously formed buried single-crystal ErSi2 layer for implantation temperatures Ti(approximately-greater-than)300 °C where ion beam induced, defect mediated diffusion of Er atoms in the Si matrix occurs during the implantation process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349504
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