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  • 1
    Electronic Resource
    Electronic Resource
    Properties of CdS/ZnCdTe heterojunctions (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3106-3111 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of CdS/ZnxCd1−xTe heterojunctions have been prepared by evaporation of CdS onto single-crystal p-type ZnxCd1−xTe substrates with x=0, 0.1, and 0.3. The junction properties have been evaluated as a function of x, the substrate surface preparation, and the substrate temperature during CdS deposition. The junctions with the best quality correspond to those formed on stoichiometric ZnxCd1−xTe surfaces. Even with the optimum surface preparation, an increase in x results in an increase in the reverse saturation current and a decrease in the open-circuit voltage. Current versus voltage measurements as a function of temperature indicate that the junction transport can be described by thermally assisted tunneling. Illumination increases the junction transport current, an effect that persists for a measurable time after cessation of illumination. Both results can be described in terms of the effects of interface states, controlling tunneling/recombination and the width of the depletion layer in the ZnxCd1−xTe.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341525
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  • 2
    Electronic Resource
    Electronic Resource
    Characterization of ion damage on p-type cadmium telluride surfaces (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2792-2794 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of low-energy Ar ions (0–800 eV), from an ion beam and in an rf sputtering unit on the surface of single-crystal p-type CdTe have been investigated as a function of the ion energy using measurements of current versus voltage, spectral response, and capacitance versus voltage for indium junctions on CdTe. A threshold for the effects has been identified at an accelerating voltage of slightly less than 100 V for a fluence of 5×10−3C cm−2. Bombardment by Ar ions at voltages larger than this results in formation of an n-type surface layer on the p-type CdTe crystals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341581
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  • 3
    Electronic Resource
    Electronic Resource
    Transport measurements in p-type CdTe single crystals and ion-beam doped thin films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8359-8363 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical transport properties of phosphorus-doped p-type CdTe single crystals and phosphorus-ion-beam doped, homoepitaxial thin films have been investigated by means of van der Pauw Hall effect and resistivity measurements as a function of temperature from 8 to 400 K. Analysis of the data indicates a maximum doping level greater than 2×1017 cm−3 in the films, at least as high as in the single crystals. Phosphorus has an ionization energy of about 40 meV, the degree of compensation is smaller in the films, room temperature mobilities of the films are lower than those for single crystals by about 20%, and the temperature dependence of mobility is similar for both crystals and films. Impurity scattering is dominant at lower temperatures and polar mode scattering is dominant at higher temperatures with a maximum mobility at 150–190 K. Both the single crystals and the ion-assisted doped films show a temperature independent resistivity at temperatures below 40 K, indicating the presence of impurity band conduction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353428
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  • 4
    Electronic Resource
    Electronic Resource
    Reinterpretation of degradation kinetics of amorphous silicon (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1037-1039 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Generation of light-induced metastable defects in amorphous Si:H(a-Si:H) is shown to follow the same stretched exponential (SE) that describes relaxation of thermally induced metastability at room temperature for a simple case. Apparent power laws derived from the central part of the SE are (time)0.3 and (intensity)0.6, agreeing well with the (time)1/3 and (intensity)2/3 dependences often reported in the mid range of defect density, thus providing an alternative description of defect generation. The SE link between light-induced and thermally induced instabilities suggests that the thermal effects are also due to defect processes, and offers an alternative defect-based explanation to a macroscopic "structural relaxation'' or "glass transition.''
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100790
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  • 5
    Electronic Resource
    Electronic Resource
    Traps and Trapping Processes (1953)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 57 (1953), S. 785-790 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j150509a011
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  • 6
    Electronic Resource
    Electronic Resource
    A new mechanism for superlinear photoconductivity with relevance to amorphous silicon (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5138-5143 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The phenomenon of superlinear photoconductivity in which the photocurrent varies as a power of the photoexcitation intensity greater than one, corresponding to an increase in carrier lifetime with increasing intensity, has been well known in a variety of crystalline semiconductors for many years. Description of the phenomenon in these materials requires two kinds of competing recombination centers: (1) one with a very small capture cross section for the majority carrier and a large cross-section ratio for minority carrier (Coulomb attractive) to majority carrier (neutral or Coulomb repulsive) capture, and (2) another with a larger capture cross section for majority carriers. This article describes a new mechanism for superlinear photoconductivity that involves only a single multivalent defect, such as the metastable dangling bond defect in amorphous silicon, which can give rise to superlinear photoconductivity provided that the capture cross-section ratio of Coulomb attractive to neutral capture is sufficiently small. Careful examination of the variation of photoconductivity with photoexcitation intensity in samples suitably selected for dark Fermi level position is capable of providing additional information about the capture cross-section ratios for metastable defects in amorphous silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355310
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  • 7
    Electronic Resource
    Electronic Resource
    Interpretation of the activation energy derived from a stretched-exponential description of defect density kinetics in hydrogenated amorphous silicon (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8659-8661 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: At least three quantities have been referred to as "activation energies'' in association with fits to metastable defect kinetics in hydrogenated amorphous silicon. Most commonly cited is Eτ, the activation energy determined from stretched-exponential fits to kinetics data measured over a range of temperatures. The stretched exponential can also be written in terms of a rate constant, K, which has been reported as being thermally activated. In addition, a stretched-exponential model describing defect kinetics includes an energy, E2, in its rate equation. In this article, we clarify the interpretations of Eτ, EK, and E2, and discuss the possible physical significance of Eτ.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353378
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  • 8
    Electronic Resource
    Electronic Resource
    Values of capture cross sections of metastable defects in hydrogenated amorphous silicon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1926-1934 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of defect density, photoconductivity, and dark conductivity are used to obtain information about the values of the electron capture cross sections of charged and neutral metastable dangling-bond defects in high-quality, undoped, hydrogenated amorphous silicon at room temperature. Sixty measurements, obtained in the process of optical degradation experiments as a function of time at four different temperatures, have been analyzed using photoconductivity models corresponding to either one or two types of discrete-level, multivalent defects. A model with two types of defects is able to accurately describe both dark conductivity and photoconductivity results, and gives the following average values: an electron capture cross section of about 1×10−16 cm2 for neutral centers of both higher-lying (density not increased by light) and lower-lying (density increased by light) defects, of about 2×10−16 cm2 for positively charged higher-lying defects, and of about 20×10−16 cm2 for positively charged lower-lying defects. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361082
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  • 9
    Electronic Resource
    Electronic Resource
    Measurement and control of ion-doping-induced defects in cadmium telluride films (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2673-2679 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Homoepitaxial p-type CdTe films were grown by coevaporation of CdTe and phosphorus in vacuum, where the phosphorus vapor was ionized and accelerated toward the substrate. Hole densities up to 2×1017 cm−3 were obtained using an ion energy of 60 eV. Effects of residual ion damage were observed using cross-sectional transmission electron microscopy, etch-pit density, and minority-carrier diffusion length measurements. This ion damage is dependent on both the ion dose and the ion energy. Reducing the ion energy below 60 eV results in lower doping densities, but using electron irradiation and Cd overpressure during deposition makes it possible to achieve equivalent doping levels for 20 eV ions while reducing the ion damage. At an ion energy of 20 eV, using electron irradiation of the growing film, and a 0.2% overpressure of Cd, films with hole density of 1×1017 cm−3 and diffusion length of 0.35 μm were obtained. Photovoltaic behavior of the films deposited in different conditions was tested by fabricating n-CdS/p-CdTe heterojunctions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356220
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  • 10
    Electronic Resource
    Electronic Resource
    Unique correlation of the Fermi energy with the metastable defect density in amorphous silicon (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1571-1576 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper reports an empirically based correlation between the metastable defect density and the value and temperature dependence of the Fermi energy in undoped hydrogenated amorphous silicon. According to this correlation, to specify two of the three quantities: Fermi energy, defect density, and temperature, is to specify the third, independent of the history of the sample. Almost 300 measurements of dark conductivity over a wide range of defect densities and temperatures, obtained in the course of measuring the kinetics of optical degradation of amorphous silicon at four temperatures, were subjected to analysis. A detailed empirical summary of these data is given, since their relevance extends beyond this present work. A model with two different types of multivalent defects whose relative density changes with total defect density is the simplest model consistent with the data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356393
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