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  • American Institute of Physics (AIP)  (49,884)
  • Wiley-Blackwell  (47,572)
  • American Association for the Advancement of Science (AAAS)
  • 1995-1999  (106,317)
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  • 101
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2847-2855 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of excimer laser irradiation (193 nm, 20 ns pulses and 248 nm, 20 ns and 500 fs pulses) on the structure and morphology of plain and gold-film coated mica surfaces has been investigated for fluences between 8 mJ/c2 and 19 J/cm2. Surfaces treated with laser fluences below the ablation threshold (λ=248 nm) are well suited for controlled growth of metallic films, whereas above-threshold treated samples (λ=193 nm) form roughened surfaces with close-packed arrays of cones. The cone generation can be suppressed by appropriate choice of laser parameters, resulting in the formation of ablation holes with micrometer precision. The same precision can be obtained in ultrathin metallic films without destroying the underlying mica surface. Low-energy electron diffraction is used to monitor laser-induced microscopic changes of the mica surface upon low-fluence irradiation. It is seen that the first step of the ablation process includes reorientation of dipole domains on the surface. Thereafter, scanning electron microscopy reveals melting of the surface and the onset of explosive sputtering processes. Studies of the ablated products by the use of quadrupole mass spectrometry, quartz microbalance, and photoimaging indicate large kinetic energies and a high directionality of the ablated products. © 1999 American Institute of Physics.
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  • 102
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2226-2231 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical beam induced current (OBIC) imaging through the backside of integrated circuits was investigated in the wavelength λ region from 1.15 to 1.26 μm. With a subpicosecond excitation source and approximately 1 mW at the sample, the two-photon contribution to the generated photocurrent dominates at λ=1.25 μm but becomes negligible for λ〈1.18 μm. One-photon- (1P-) and two-photon- (2P-) OBIC images are very different. In the 1P case a strong contribution by scattered light to the carrier generation leads to an edge enhancement effect that is entirely missing when 2P excitation dominates. 2P-OBIC images often show supply-voltage dependent intensity steps that are much sharper than the optical resolution permits. The advantages of 2P-OBIC lie in the spatial confinement of the free carrier generation, a more relevant contrast mechanism, and the promise of a substantial increase in spatial resolution because of the quadratic intensity dependence and the possibility of using silicon solid immersion lenses, which could eventually provide resolution sufficient for circuits made by deep UV lithography. © 1999 American Institute of Physics.
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  • 103
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1874-1877 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A correlative study of the electrically active grain boundary structure of ZnO polycrystals has been carried out using a scanning electron microscope/scanning tunneling microscope (SEM/STM) combined instrument. Current imaging tunneling spectroscopy (CITS) measurements reveal reduced surface band gaps, as compared with grain interiors, at the charged boundaries imaged by SEM-based remote electron beam induced current (REBIC). ZnO grain boundaries were also imaged in the STM-REBIC mode with a resolution of up to 20 nm. The contrast differences observed in the SEM-REBIC and STM-REBIC images are discussed in terms of the different experimental conditions used in both techniques. © 1999 American Institute of Physics.
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  • 104
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1878-1887 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: New measurements of oxygen out-diffusion in Czochralski silicon confirm previous reports that it occurs over an anomalously long range at low temperatures (T〈700 °C). The surface concentration is shown to decrease with increasing anneal time at ∼430 °C while the depth to which the concentration is depleted remains almost constant. The rate of decrease of the surface concentration is correlated with the rate of loss of isolated oxygen atoms in the bulk. All these observations are explained if isolated oxygen atoms are converted slowly during the anneal to an oxygen-containing fast diffusing species (Ofds) which diffuses over long distances before being trapped. High concentrations (0.6–1.7×1017 cm−3) of substitutional carbon in the crystal increase the trapping rate of Ofds but this rate tends to decrease with increasing anneal time, tending to the value for carbon-free material. Estimates of the rate of formation of Ofds are close to the expected rate of dimerization in a dilute solution at the lowest temperatures (T〈450 °C), but tend to be below the expected rate at higher temperatures. There is no clear indication of Ofds dissociation over the whole temperature range (T≤700 °C). These observations suggest that the formation of Ofds is more complicated than one would expect if it were the O2 dimer. Alternatives such as the oxygen vacancy complex should be considered. © 1999 American Institute of Physics.
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  • 105
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1888-1897 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use a low-energy positron beam to study the influence of doping and stoichiometry on the native defects in GaAs grown by molecular-beam epitaxy at 250 °C. Ga vacancies are identified in all samples by measuring the momentum distribution of annihilating core electrons. The charge of VGa is negative in Si-doped samples but neutral in undoped and Be-doped material. We propose that the Ga vacancies are complexed with As antisites in undoped and Be-doped samples and with Si impurities in n-type material. The concentration of Ga vacancies depends on the doping and stoichiometry of growth conditions. It follows generally the trends in the VGa formation energy as a function of the Fermi level position and stoichiometry. The strong loss of free carriers in the As-rich Si-doped samples is attributed to the formation of Ga vacancy complexes, negative ion defects and inactive clusters of Si atoms. © 1999 American Institute of Physics.
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  • 106
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1898-1903 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanometer-size water bridges have been used to confine the oxidation of silicon surfaces with a noncontact atomic force microscope. The formation of a water bridge between two surfaces separated by a gap of a few nanometers is driven by the application of an electrical field. Once a liquid bridge is formed, its length and neck diameter can be modified by changing the tip-sample separation. The liquid bridge provides the ionic species and the spatial confinement to pattern Si(100) surfaces in noncontact force microscopy. The method is applied to write arrays of several thousands dots with a periodicity of 40 nm and an average width of 10 nm. © 1999 American Institute of Physics.
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  • 107
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1915-1920 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model for explosive initiation under the influence of high energy radiation has been developed. The possibility for comparing explosive initiation conditions under the influence of radiation pulse and shock wave loads of microsecond duration has been shown and the initiation conditions as a function of the radiolysis constants have been determined. © 1999 American Institute of Physics.
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  • 108
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1904-1914 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Well-known grain interaction models for the description of macroscopic elastic behavior of polycrystalline specimens, as due to Voigt, Reuss, Neerfeld–Hill, and Eshelby–Kröner, may be successfully applied to bulk specimens, but are shown to be less suited for thin films. An elaboration of a proposal due to Vook and Witt for grain interaction is given. It is assumed that the strain parallel to the specimen surface is equal in all crystallites and that the stress perpendicular to the specimen surface is zero in all crystallites. It is shown that these assumptions give rise to elastic anisotropy of the specimen on the macroscopic scale. It is also shown that in this case the dependence of the measured lattice strain (in a diffraction experiment) on the squared sine of the specimen tilt angle ψ (cf. the sin2 ψ method), is nonlinear, contrary to what is predicted by the bulk grain interaction models. This is the first time that nonlinear sin2 ψ plots have been calculated using an elastic grain interaction model, in the absence of crystallographic texture. Experimental verification has been achieved by x-ray diffraction strain measurements performed on a vapor deposited nickel film. The experimental results are in good accordance with the Vook–Witt [J. Appl. Phys. 7, 2169 (1965)] grain interaction model. This is the first experimental evidence of direction dependent grain interaction in thin films. © 1999 American Institute of Physics.
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  • 109
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1921-1924 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, we show how the well-known one-phonon confinement model can be improved to determine the diameter of silicon nanocrystalline spheres from the optical phonon wave-number shift, even using a physical-meaning weighting function. We show that the fundamental parameter is the knowledge of the phonon dispersion. The accuracy of our approach is supported by experimental data obtained by selective UV Raman scattering on nanocrystalline silicon thin films produced by size-selected silicon cluster beam deposition. © 1999 American Institute of Physics.
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  • 110
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1925-1931 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polymer films are serving as passive regions in fast logic circuits and as active regions in organic optoelectronic devices, such as light-emitting diodes. Recent data illustrated the strong anisotropy in the thermal conductivity of polyimide films of thickness near 1 μm, with the in-plane value larger by a factor of approximately six. This manuscript extends previous theoretical work on heat conduction in stretched bulk polymers to model the conductivity anisotropy in spin-coated polymer films. Predictions are based on the standard deviation of the angle of molecular orientation with respect to the film in-plane direction, which can be investigated using birefringence data, and the expected conductivity anisotropy in a material with perfectly aligned chains. The modeling and previous data indicate that the anisotropy factor could increase to a value larger than 10 for polyimide films much thinner than 1 μm. © 1999 American Institute of Physics.
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  • 111
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2263-2267 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sputter yields Y and sticking coefficients S are essential inputs for feature profile evolution studies. Molecular dynamics simulations are used to compute sputter yields and sticking coefficients for Cu+ ions impinging on a Cu surface at various incident energies 15〈Ei〈175 eV, and incident angles 0〈θi〈85°. Threshold energies for sputtering Eth are also predicted and shown to vary with θi. We show that for energies below what is experimentally considered as threshold for physical sputtering (Eth(expt)∼60 eV) a yield between 0.01 and 0.1 Cu/ion is observed for some off-normal angles of incidence [C. Steinbrüchel, Appl. Phys. Lett. 55, 1960 (1989)]. We show that Y∝Ei−Eth below Eth(expt) when Y is a maximum with respect to θi (at θi=45°). We find that Y∝Ei1/2−Eth1/2 at other angles of incidence. We show that S is sensitive to Ei and θi in this regime. In particular, when θi=85°, we see that ln S∼1/Ei for Ei≥20 eV. We discuss some assumptions commonly used in profile simulation studies which may now be relaxed, with an eye toward improving the predictive power of those simulations. © 1999 American Institute of Physics.
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  • 112
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    Journal of Applied Physics 86 (1999), S. 2278-2280 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of stress on solid-phase crystallization of amorphous silicon (a-Si) were studied by laser Raman spectroscopy. Compressive stress was introduced in a-Si with a Si3N4 cap. The speed of crystallization decreased with the increase of the stress while it increased again with an additional cap of SiO2 on a Si3N4 cap. A SiO2 cap introduced tensile stress in an a-Si film and relaxed compressive stress by a Si3N4 cap. The reason why crystallization of a-Si is suppressed is that the stress is elastic and that it does not relax with crystallization. © 1999 American Institute of Physics.
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  • 113
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    Journal of Applied Physics 86 (1999), S. 2268-2277 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrathin films of amorphous carbon (a-C) were deposited on Si(100) substrates by radio frequency (rf) sputtering using pure Ar as sputtering gas, rf power of 80–1000 W, and substrate bias voltage between 0 and −300 V. The films possessed a thickness of 6–95 nm, nanohardness of 12–40 GPa, and root-mean-square surface roughness of 0.15–32 nm, depending on the deposition conditions. Plasma parameters of the film growth environment were correlated to the deposition conditions to obtain insight into the phenomena responsible for changing the growth characteristics and nanomechanical properties of the a-C films. The surface binding energies of carbon atoms in the films were interpreted in terms of measured sputter etching rates due to energetic Ar ion bombardment at a kinetic energy of 850 eV. Higher etching rates were found for a-C films with higher growth rates and lower hardness. Ultrathin (10 nm) a-C films of maximum nanohardness (∼39 GPa) were synthesized at 3 mTorr working pressure, 750 W rf power, −200 V substrate bias, and 5 min deposition time. Results are presented to elucidate the effects of rf power, working pressure, and substrate bias on the quality of a-C films deposited by controlling the ion-current density, mean free path, and sheath voltages in the rf discharges. The latter are important parameters affecting the ratio of ion to atom fluxes and the intensity (power density) of ion bombardment on the growing film surface. © 1999 American Institute of Physics.
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  • 114
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2281-2290 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogen-free diamond-like carbon (DLC) films have been deposited with a 100 fs (FWHM) Ti:sapphire laser beam at intensities I in the 1014–1015 W/cm2 range. The films were studied with scanning probe microscopy, variable angle spectroscopic ellipsometry, Raman spectroscopy, and electron energy loss spectroscopy. DLC films with good scratch resistance, excellent chemical inertness, and high optical transparency in the visible and near infrared range were deposited at room temperature. As the laser intensity was increased from 3×1014 to 6×1015 W/cm2, the films showed an increased surface particle density, a decreased optical transparency (85%→60%), and Tauc band gap (1.4→0.8 eV), as well as a lower sp3 content (60%→50%). The time-of-flight spectra recorded from the laser plume exhibited a double-peak distribution, with a high energy suprathermal ion peak preceding a slower thermal component. The most probable ion kinetic energy showed an I0.55 dependence, increasing from 300 to 2000 eV, when the laser intensity was varied from 3×1014 to 6×1015 W/cm2, while the kinetic energy of suprathermal ions increased from 3 to over 20 keV and showed an I0.33 dependence. These high energy ions are believed to have originated from an electrostatic acceleration field established by suprathermal electrons which were formed by resonant absorption of the intense laser beams. © 1999 American Institute of Physics.
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  • 115
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2300-2306 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In semiconductor technology, TiN thin film elements can be used as diffusion barrier between a metallic layer and a silicon oxide dielectric. Plasma application during the growth of TiN thin films modifies the microstructure of these films and consequently alters their physical properties. But details of the effect of plasma application on the evolution of the film microstructure and correlations between this evolution and the physical properties are still unclear. To clarify the correlations, the microstructure of a series of TiN thin films, deposited using an organometallic chemical vapor deposition technique combined with plasma treatments has been analyzed by transmission electron microscopy (TEM). The films were obtained by repeated fabrication sequences consisting of limited film growth followed by the application of a N2/H2 gaseous plasma with various powers and duration times and are actually stackings of plasma-treated elementary layers. TEM analysis shows that these films are made of nanocrystallites and that whereas crystallites are randomly oriented when no plasma is applied, short-time plasma treatments induce a tendency to 〈200〉 texture and longer treatments progressively rotate the direction of texture to 〈220〉. © 1999 American Institute of Physics.
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  • 116
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    Journal of Applied Physics 86 (1999), S. 2393-2396 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron-beam (EB) irradiation on rf-sputtered silicate glass thin films can produce second-order nonlinearity. EB-poled germanosilicate glass film shows a maximum nonlinear optical (NLO) coefficient of d33=0.33 pm/V. It is found that the nonlinearity is homogeneous throughout the film layer and depends on both the EB current and dose. Moreover, a NLO grating, i.e., χ(2) grating, is realized using a periodic EB writing technique. © 1999 American Institute of Physics.
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  • 117
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    Journal of Applied Physics 86 (1999), S. 2377-2384 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The addition of oxygen in Ca0.5Sr0.5Ga2S4:Ce phosphor was found to nearly double the luminance and to blue shift the emission spectrum of the Ce+3 4f–5d transition. X-ray photoelectron spectroscopy (XPS) analysis was used to investigate the local chemistry of the Ce+3 luminescent center in the undoped and oxygen-doped Ca0.5Sr0.5Ga2S4 phosphor. The shake up structure in the Ce+3 3d3/2 and 3d5/2 XPS spectra is due to a ligand-to-metal charge transfer process, and the relative intensity of the charge transfer peaks increased when oxygen was introduced. Because the charge transfer probability is controlled by the local ionicity of the Ce bonds, the increase in the charge transfer peak intensity is consistent with the formation of Ce–O bonds. Furthermore, the binding energy of the charge transfer peaks and the Ce MNN Auger peak shifted, again consistent with oxygen bonding to the Ce+3 luminescent center. A self-consistent field configuration interaction model is used to calculate the positions of the 4f and 5d levels with Ce–S and Ce–O bonds. By replacing the three of eight sulfur ligands with oxygen the SCF/CI model predicted a 1035 cm−1 blue shift in the 4f–5d transition energy which was in excellent agreement with the observed 730 cm−1 blue shift. © 1999 American Institute of Physics.
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  • 118
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    Journal of Applied Physics 86 (1999), S. 2691-2695 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the measurement of carrier concentration and mobility of metalorganic chemical vapor deposited GaN thin films on the sapphire substrate by an infrared reflection technique. By fitting with the experimental data we obtain all the parameters of the lattice vibration oscillators and of the plasmon. From the plasmon frequency and the damping constant we have derived the carrier concentration and the electron mobility. The concentration agrees with the Hall data very well while the mobility values are smaller than that of the Hall measurement by a factor of about 0.5. We attribute such mobility lowering to the increase of scattering for the electrons coupling with the incident photons. © 1999 American Institute of Physics.
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  • 119
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    Journal of Applied Physics 86 (1999), S. 2700-2711 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the thickness and annealing temperature dependence of the structural, morphological, compositional, and electrical properties including ferroelectric characteristics of Pb(Zr0.52Ti0.48)O3 thin films deposited by a sol-gel method. The thickness and annealing temperature of the films were in the range of 0.12–0.36 μm and 520–670 °C, respectively. The crystalline structure and growth behavior of the films have been studied by x-ray diffraction, scanning electron microscopy, and atomic force microscopy. It is demonstrated that the weak ac electric field dependence of the permittivity of the films in terms of the Rayleigh law can be explained. The coercive field obtained from a sweep up and down schedule of the capacitance-voltage curves is asymmetrical and shows different behavior according to the annealing temperature and thickness. We also show that the activation energy coefficient, γ, obtained from frequency dependent polarization-electric field hysteresis loops is related to the annealing temperature and thickness of the films. A low leakage current density (∼100 nA/cm2 at 200 kV/cm) and low annealing temperature (∼520 °C) demonstrate the potential of the deposited films for integrated ferroelectric random access memory and piezoelectric sensor applications. © 1999 American Institute of Physics.
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  • 120
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    Journal of Applied Physics 86 (1999), S. 2712-2718 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report pyroelectric responsivity versus depth profiles in nanocomposites of powdered barium titanate and tripropylene glycol diacrylate obtained by using the thermal pulse (TP) method. The ceramic nanopowder (mean particle size 270 nm) was prepared by combined solid-state polymerization and pyrolysis of a metallo-organic precursor. Films of powder/monomer dispersion (thickness ∼30 μm) were cured by irradiation with an electron beam (energy 140 keV, dose 80 kGy). The observation of a TP response after electron beam curing (EBC) indicates the appearance of a poling electric field as an effect of the EBC. The polarization depth profiles were studied for different filler contents. The composites show potential promise for piezo and pyroelectric sensors applications and for charge storage in microelectronics. © 1999 American Institute of Physics.
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  • 121
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    Topics: Physics
    Notes: The sol-gel synthesis of Co–RE (RE=Ho, Er, Tm, Yb, Lu) ferrite nanocrystalline films was accomplished on monocrystalline silicon substrates, and the influence of RE ions on structure, magnetic, and magneto-optical (MO) properties of the resultant ferrites was examined. The results obtained reveal that, when x≤0.2, the CoFe2−xRExO4 ferrite films have pure spinel phase with slightly enlarged cell constants and lattice distortion due to the large radii of RE ions. The RE ions tend to decrease the room-temperature magnetization as well as the Curie point of products, and may have a certain contribution to coercive force except for a nonmagnetic Lu3+ ion. For the present optical structure in which MO layers are substrated on silica, Co–RE ferrite films show the peak Kerr rotation at a shorter wavelength than the CoFe2O4 film, and Er or Tm doped samples exhibit an interesting enhancement of the MO effect. © 1999 American Institute of Physics.
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  • 122
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    Journal of Applied Physics 86 (1999), S. 2739-2745 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fluorinated amorphous carbon thin films (a-C:F) for use as low-dielectric-constant interlayer dielectrics are deposited by helicon-wave plasma enhanced chemical vapor deposition. To improve their thermal stability, the feasibility of adjusting the fluorine-to-carbon (F/C) ratio by changing the deposition pressure was investigated. Decreasing the pressure increased the dissociation of a source fluorocarbon material in the plasma and decreased the F/C ratio of the deposited film. Both the thermal stability and the dielectric constant of the a-C:F films were increased as the F/C ratio was decreased. Thus, there is a tradeoff relationship between a low dielectric constant and high thermal stability and the tradeoff could be optimized by the pressure during deposition. The mechanism of the pressure dependency of the dielectric constant of a-C:F films was investigated by quantifying the contribution of each polarization and found that a decrease in the dielectric constant of a-C:F films can be attributed to decreases in the orientational and electronic polarizations. © 1999 American Institute of Physics.
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  • 123
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    Journal of Applied Physics 86 (1999), S. 2751-2758 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, charge transport through interpoly thin nitride/oxide stacked films, including nitride/oxide dual- and oxide/nitride/oxide tri-layer films, was studied. Extensive experimental results, concerning current conduction in single oxide layer, single nitride layer, nitride/oxide dual-layer, and oxide/nitride/oxide tri-layer films are presented. An effective investigation of the various mechanisms that can explain current conduction and charge trapping in these dielectrics was performed. To this aim, different approaches to transport modeling, namely, a classical current continuity model, a transmission model, and a two-step trap assisted model are proposed. The gains and trade offs offered by each model are pointed out. A comprehensive model for the conduction mechanisms in thin nitride/oxide stacked films is proposed. © 1999 American Institute of Physics.
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  • 124
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    Journal of Applied Physics 86 (1999), S. 2774-2778 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present contact-angle hysteresis and surface energy of differently treated indium–tin–oxide (ITO) thin films obtained from contact angles for liquids with different polar character. We find that the hysteresis and the polar and dispersion component of the surface energy depend strongly on the surface treatments. Oxygen-plasma treatments induce the highest polarity and the highest total surface energy, and we suggest that this improves the interface formation with polymers, and therefore, the performance of light-emitting diodes. We discuss the results in relation to the ITO surface roughness and chemical heterogeneity modified by the different treatments. © 1999 American Institute of Physics.
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  • 125
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    Journal of Applied Physics 86 (1999), S. 2779-2784 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A fundamentally new method for light coupling in quantum well infrared photodetectors that provides a ten-fold improvement over an optimized grating coupler is presented. It is based on the prism-film coupler concept developed earlier for selective mode coupling into integrated optical circuits. In this article this concept is specifically used to turn the incident electric field from one that is polarized parallel to the quantum well layer to one that is mostly perpendicular to the layer, thereby increasing dramatically the sensitivity of the quantum well infrared photodetector. Detailed sample design and its computer simulation results are given and discussed. © 1999 American Institute of Physics.
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  • 126
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    Journal of Applied Physics 86 (1999), S. 2795-2799 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report transmission infrared near-field scanning microscopy (IR-NSOM) imaging of chemically amplified photoresist polymers patterned by ultraviolet exposure. Chemical specificity was attained using infrared wavelengths tuned to the 3 μm OH stretch absorption band of the polymer, a band sensitive to the chemical changes characteristic of the lithographic photochemical process of this material. Contrast mechanisms are discussed together with the IR-NSOM specifics, such as the fabrication of an infrared near-field probe with high throughput, which lead to an attainable resolution of λ/10 and a transmission sensitivity of 1%. © 1999 American Institute of Physics.
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  • 127
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    Journal of Applied Physics 86 (1999), S. 2800-2811 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Exact analytical solutions for the surface potential due to a current source are available only for special volume conductors. Here we derive approximate analytical solutions exploiting the fact that for the upper convexity of the head corrections to the spherical approximation are small compared to its radius. First we approximate the real surface, defined in terms of an angular dependent "radius," by a finite sum of spherical harmonics, regarding everything but the zeroth component (the sphere) as a small perturbation. Inserting this formulation into the standard surface integral equation allows us to analytically construct and invert the integral operator as a Taylor expansion with respect to the perturbation. Remarkably, for finite order of perturbation the integral operator and its inverse, expressed as a matrix in the basis of spherical harmonics, is sparse. Furthermore, without loss of generality the solution due to a current dipole can be expressed as a set of sums over a single index. Explicit formulas and examples will be presented for one shell, for an approximation of the surface up to second order of spherical harmonics, and up to first order of the perturbation. By comparing the results to the exact solution for a prolate spheroid we estimate the performance for realistic deformations. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 2818-2824 
    ISSN: 1089-7550
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    Topics: Physics
    Notes: Propagation of surface acoustic modes on the (001) and (111) surfaces of Si coated by a thin isotropic overlayer is studied theoretically and experimentally. It is shown that when a surface acoustic wave (SAW) coexists with a pseudosurface wave (PSAW) of the uncoated substrate, the second-order acoustic mode of the film/substrate system originates from a PSAW and the first-order one from a SAW. The polarization pattern of either mode varies from Rayleigh type (saggital plane polarization) to Love type (horizontal polarization) depending on the propagation direction and the product of the wave vector q and film thickness d. It is also shown that the isolated off-symmetry pure mode point within the PSAW branch disappears at some critical qd value. Experimentally, surface acoustic modes of Ti-coated Si wafers are measured with the impulsive stimulated thermal scattering (ISTS) technique based on laser generation and detection of acoustic waves at a specified wave vector. ISTS data are shown to be determined by the surface elastodynamic Green function G13(ω,g). The measurements, only sensitive to Rayleigh-type waves, detect either the first- or the second-order mode, or both, depending on the qd and the observation angle. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 2836-2846 
    ISSN: 1089-7550
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    Topics: Physics
    Notes: The one-dimensional time dependent heat conduction equation for surface heating and a phase boundary (the so-called classical Stefan problem) has been solved in the absence of vaporization. For a rectangular laser pulse and constant material parameters, useful solutions have been determined for melt depth as a function of time both during and following the pulse. Based on the model, the intensity dependence of the melt depth is investigated. Two melting regimes—slow and fast—have been identified by comparison with previously reported data for silicon. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 2856-2864 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a comprehensive study of the film surface temperature (TS) variation during La1.85Sr0.15CuO4 deposition by laser ablation as a function of the process parameters (oxygen pressure and target-substrate distance). For high O2 pressures, TS (measured with an infrared pyrometer) follows a decreasing exponential law, while for lower oxygen pressures the experimental data suffer a departure from the theoretical curve. The observed deviation suggests the existence of nonsteady thermal processes in the plume during deposition. The modifications of plume kinetics along with the characterization of deposited films provide important information and a better understanding of the pulsed-laser deposition process. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 1439-1442 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Defect complexes in N-doped and As-doped ZnSe are studied by using the discrete-variational local-density-functional method within a cluster model. Based on the difference of formation energy between two complexes, it is found that the NSe–Zn–VSe complex is a more efficient acceptor compensator than the NSe–Znint complex in N-doped ZnSe, while the AsSe–Znint complex is a more efficient acceptor compensator than the AsSe–Zn–VSe complex in the As-doped ZnSe. The NSe–Zn–NSe complex with a 170 meV acceptor level and the NSe–NZn complex with an 88 meV donor level are respectively identified. The existence of donor states of N molecules in ZnSe is confirmed. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 1449-1451 
    ISSN: 1089-7550
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    Topics: Physics
    Notes: Er doped GaSb single crystals have been studied by scanning tunneling spectroscopy (STS) and cathodoluminescence (CL) in a combined scanning electron microscope–scanning tunnelling microscope system. The surface band gap in doped samples has been found to be about 0.5 eV while in undoped crystals the gap is close to the bulk value. Inhomogeneities in the local electronic properties of the doped crystals are studied by a correlation of the CL images and STS data. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 1443-1448 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A two-dimensional model of a strained Si/Si1−xGex transistor with δ-doped layers was developed. A semiclassical drift diffusion model is used to study the effects of different conduction-band offsets and variation of the distance between the Si channel and an n-type δ-doped layer as well as the thickness of this δ-doped layer at room temperature. We found that a large conduction-band offset, or a large Ge concentration, confines electrons more strongly to the Si channel. These factors raise the drain current when the doping level per unit area is constant. The area between the Si channel and the δ-doped layer and the δ-doped layer itself forms a barrier to electrons donated by the donor atoms in the δ-doped layer. Hence, the smaller the distance between the Si channel and the δ-doped layer and the thinner the δ-doped layer, the larger the number of electrons in the Si channel. Through the present analysis, an optimum design concept is clarified for device applications of Si/Si1−xGex systems. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 1452-1455 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Donor-assisted resonant tunneling in nominally symmetric GaAs/(AlGa)As large area double-barrier diodes is investigated. The log(I)–V characteristics are used to evaluate doping density in the quantum well and are investigated in connection with donor cluster-assisted resonant tunneling. The single-donor-related feature in the resonant-tunneling characteristics is used to detect the presence of donors in the quantum well, even at concentrations of the order of the lowest achieved so far in molecular beam epitaxy GaAs. Expected effects of the presence of donors in the quantum well on the log(I) vs V characteristics are discussed. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 1456-1459 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Variable temperature photoluminescence (PL) measurements for In0.3Ga0.7As(6 nm)/GaAs(34 nm) quantum dot superlattices with a period of 20 and an In0.3Ga0.7As(6 nm)/GaAs(34 nm) reference single quantum well have been conducted. It is found that the temperature dependence is different between the quantum dots and the reference single quantum well. The PL peak energy of the single quantum well decreases faster than that of the quantum dots with increasing temperature. The PL peak energy for the InGaAs/GaAs quantum dots closely follows the InAs band gap in the temperature range from 11 to 170 K, while the PL peak energy for the InGaAs/GaAs quantum well closely follows the GaAs band gap. In comparison with InAs/GaAs quantum dots, the InGaAs/GaAs quantum dots are more typical as a zero-dimensional system since the unusual PL results, which appear in the former, are not obvious for the latter. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 1460-1462 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report that the quasibound states at the above-barrier region in AlGaAs–GaAs superlattices can be clearly observed at room temperature by photoconductivity as well as photoreflectance measurements. We provide concrete evidence to confirm that free-carrier confinement at barrier layer does exist. It is also found that the barrier-width dependence of the above-barrier transition energies can be described quite well by the modified Messiah's calculation. However, the simple calculation using the constructive interference condition can only explain the transitions at lower energies, and fails with increasing transition energy. © 1999 American Institute of Physics.
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    Notes: The n-Si/i-p-i SiGe/n-Si structure, grown by ultra-high-vacuum chemical molecular epitaxy, was analyzed by cross-sectional transmission electron microscopy and secondary ion mass spectroscopy. It is shown that no defects are observed in the n-Si/i-p-i SiGe/n-Si structure, the interfaces between the SiGe layer and the n-Si layers are clear and planar, both the Ge and boron atoms are uniformly distributed in the p-SiGe, and the profiles of boron and Ge are abrupt from the n-Si to the SiGe layer. A high-performance microwave power SiGe heterojunction bipolar transistor was fabricated using the n-Si/i-p-i SiGe/n-Si structure. Therefore, ultra-high-vacuum chemical molecular epitaxy is one of the most promising methods for the growth of the Si/SiGe strained epilayers. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 1467-1471 
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    Topics: Physics
    Notes: The second-order nonlinear optical susceptibility χ(2) for second-harmonic generation is calculated for the 11H transition of a graded double quantum well (DQW) structure of undoped GaAs/AlxGa1−xAs. These results are compared with the single quantum well (QW). Our results show that the values of χ(2) have optimal magnitudes dependent on the width, depth and separation between the QWs in a DQW structure. When the electric field increases, the dipole moment increases due to the increasing separation between the electron and hole wave functions. On the other hand, the oscillator strength of the 11H transition is reduced as a result of the decrease in the overlap of the electron and hole envelope functions. These two competing factors give rise to optimal conditions for the enhancement of the second-order nonlinear susceptibility χ(2). It is demonstrated that χ(2) for the DQW structure is more enhanced than for the biased single QW. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 1477-1479 
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    Topics: Physics
    Notes: Inelastic electron tunneling experiments have been performed in Bi0.94Sb0.06–Al oxide-Al junctions. A strong peak observed at 1.9 mV in the second derivative tunnel spectra is closely related to the estimated effective Debye temperature, besides intervalley acoustic and optical phonon structures. This structure clearly corresponds to the electron–intravalley acoustic phonon coupling. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 1472-1476 
    ISSN: 1089-7550
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    Topics: Physics
    Notes: The range of carriers in thin crystalline films of the conjugated polydiacetylene derivatives 3 and 4BCMU [with the side groups R1=R2=–(CH2)3–OCO–NH–CH2–COOC4H9 and –(CH2)4–OCO–NH–CH2–COOC4H9] are demonstrated to be greater than 110 and 90 μm, respectively, and the quantum efficiencies for carrier generation are determined. The films are created as a result of electron-beam-induced topochemical polymerization of a thin surface layer on a crystalline monomer substrate. The polymer films are subsequently separated from the underlying monomer and deposited onto a series of interdigitated electrodes with varying interelectrode separation. The range and generation efficiencies are deduced by measuring the photocharge induced on the electrode system as a result of a laser pulse. Comparisons are made with bulk single crystals. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 1480-1487 
    ISSN: 1089-7550
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    Topics: Physics
    Notes: The effects of the interface separating two strongly nonlinear electric conductors is investigated. The interface may either be highly conducting or exhibit an electric contact resistance. Our analysis and results are based upon new variational principles for nonlinear composites with surface energies. For monodisperse suspensions of spheres separated from the matrix by a highly conducting interface, a critical direct-current (dc) applied field strength is found for which the electric potential inside the sample is the same as for a sample containing no spheres. For this field strength the overall electric current passing through the sample is the same as for a sample containing pure matrix conductor. When there is a contact resistance between the matrix and sphere phase, a critical dc applied current density is found for which the current density inside the sample is the same as for a sample containing no spheres. These results are shown to be independent of the location of the spheres within the sample. Moreover, this effect is independent of the concentration of spheres in the sample even beyond the onset of interface percolation. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 1488-1491 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A generalized trap-assisted tunneling (GTAT) model is proposed in this work, where an effective tunneling barrier of trapezoidal shape is considered, instead of the triangular barrier utilized in the conventional trap-assisted tunneling (TAT) model. It is demonstrated that trapezoidal barrier tunneling dominates at low electric fields (E〈4 MV/cm), while triangular barrier tunneling contributes the main part of the tunneling current at high electric fields (E=6–8 MV/cm). The comparisons of this improved model and the results of the conventional TAT model at high and low electric fields are discussed. It is concluded that GTAT can more accurately model the current density-electric field (J–E) curves for the conduction enhancement of a trapped oxide film under various deposition conditions over a wider range of electric fields. This is confirmed by the comparative use of both TAT and GTAT models on experimental data obtained from existing reports. Furthermore, a simple method for determining the trap energy level is derived from the J–E relationship. This method provides a convenient way to characterize the trap levels inside the oxide layers, without the need of other complicated measurements. The developed GTAT model can be applied to the investigations of gate oxide reliability, especially the stress-related effects and impurity incorporated oxide films (i.e., SiOF or SiON). © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 2349-2351 
    ISSN: 1089-7550
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    Topics: Physics
    Notes: We show that incorporation of nitrogen in Ga1−xInxAs to form Ga1−xInxNyAs1−y alloys leads to a splitting of the conduction band into two nonparabolic subbands. The splitting can be described in terms of an anticrossing interaction between a narrow band of localized nitrogen states and the extended conduction-band states of the semiconductor matrix. The downward shift of the lower subband edge accounts for the N-induced reduction of the fundamental band-gap energy. An analysis of the relationship between the subband splitting and the band-gap reduction demonstrates that the energetic location of the valence band is nearly independent of the N content in Ga1−xInxNyAs1−y alloys. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 2352-2354 
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    Topics: Physics
    Notes: The lattice disorder in GaP produced by fast neutrons with a fluence of 2.1×1018 cm−2 has been investigated with 1.5 MeV 4He+ channeling. The slight increase in the 〈111〉 aligned yield for irradiated crystals indicates that each primary knock-on (PKO) produces approximately 7×102 displaced atoms. Channeling studies also show a spread distribution of randomly located defects imbedded in the lattice structure. On the other hand, P antisite (PGa) defects produced by neutron irradiation are ∼2 per PKO. Irradiated samples also show a volume expansion of 0.13%. It is suggested that the lattice expansion mainly induced by vacancy–interstitial clusters arises from the displacement atoms rather than PGa defects. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 2355-2357 
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    Topics: Physics
    Notes: The microhardness H of the AIBIIIC2VI chalcopyrites can be estimated from the bulk modulus B0 by using a simple scaling law. Values of B0 for these compounds, obtained from energy dispersive x-ray diffraction and x-ray absorption spectroscopy techniques under high pressure, have been used in the scaling. The pressure-induced phase transformation from the chalcopyrite to denser structures, observed in these compounds, is also discussed. A relationship between H and the critical pressure at which such a transition occurs is also obtained. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 2358-2360 
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    Topics: Physics
    Notes: Visible electroluminescence (EL) has been observed from Ag (film or paste)/native SiO2/n-type Si structures. The diodes show good rectification behavior and the EL occurs only under reverse bias conditions when the top Ag electrode is negative. For p-type samples, a forward bias is required. The intensity of the EL is proportional to the diode current and its spectrum peaks at 620–640 nm. A model based on oxygen-related luminescent centers in the native oxide is proposed. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 2361-2363 
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    Topics: Physics
    Notes: n-type semiconducting InP is changed into p-type semiconducting by short time annealing at 700 °C. Further annealing for a longer time leads to a second conduction-type conversion changing the material back to n type again but with a much higher resistivity. These conduction conversions indicate the formation of both acceptor and donor defects and the progressive variation of their relative concentrations during annealing. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 2367-2367 
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    Journal of Applied Physics 86 (1999), S. 2364-2366 
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    Topics: Physics
    Notes: Here we report on the precise structural investigation of multiwalled boron nitride (BN) nanotubes by means of high-resolution transmission electron microscopy and electron energy loss spectroscopy. The nanotubes were produced from carbon nanotubes by applying a recently discovered technique: a substitution chemical reaction [W. Han, Y. Bando, K. Kurashima, and T. Sato, Appl. Phys. Lett. 73, 3085 (1998)]. It is found that in contrast to the starting carbon nanotubes, which exhibited large number of shells (typically 〉10), a significant proportion of buckled and corrugated graphene-like sheets, poor degree of graphitization, and wide distribution of helicities, the resultant BN nanotubes revealed perfectly straight shapes, limited number of shells (typically 2–6), and remarkable ordering of the graphene-like sheets in the so-called nonhelical "zig-zag" fashion with the [101¯0] direction parallel to the tube axis. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 1177-1180 
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    Topics: Physics
    Notes: The transmission properties of different metallic photonic lattices (square and rectangular) have been experimentally studied. A numerical algorithm based on time domain finite differences has been used for simulating these photonic structures. The introduction of defects in the two-dimensional metallic lattice modifies its transmission spectrum. If metal rods are eliminated from (or added to) the lattice, extremely narrow peaks are observed at some particular frequencies below (or above) the band pass edge. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 1186-1190 
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    Topics: Physics
    Notes: Multiple phase gratings are written in pure, Yb- and P-doped Pb5Ge3O11 crystals: a fast grating and a slow grating with substantially different response times compensate each other. Doping and thermal treatments have strong influences on the behavior of both gratings. Reduction treatments of Yb-doped samples lead to a significant decrease of the response time of the slow grating, while that of the fast grating is diminished by more than two orders of magnitude. P doping significantly increases the response time of the fast grating. Possible origins of both gratings are discussed. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 1181-1185 
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    Topics: Physics
    Notes: Hexa-deutero dimethylsulfoxide (DMSO-d6) solutions of terphenyl-based Nd3+, Yb3+, and Er3+ complexes functionalized with a triphenylene antenna chromophore exhibit room temperature near-infrared luminescence at wavelengths of interest for the optical telecommunication network (∼1330 and ∼1550 nm). The sensitizing process takes place through the triplet state of triphenylene as can be concluded from the oxygen dependence of the sensitized luminescence. A significant fraction of the excited triphenylene triplet state is quenched by oxygen, instead of contributing to the population of the luminescent state of the lanthanide ion. The luminescence lifetimes of the triphenylene-functionalized lanthanide complexes ((2)Ln) are in the range of microseconds with a lifetime of 18.6 μs for (2)Yb, 3.4 μs for (2)Er, and 2.5 μs for (2)Nd in DMSO-d6. These luminescence lifetimes seem almost completely dominated by the vibrational quenching by the organic groups in the polydentate ligand and solvent molecules, which leads to low overall luminescence quantum yields. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 1191-1195 
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    Topics: Physics
    Notes: Based on the bidirectional fast Fourier transform beam propagation method (FFT-BPM), a self-consistent Nd:Ti:LiNbO3 Fabry-Pérot waveguide laser model has been developed. By using the bidirectional FFT-BPM and the attenuation effect of pumping and resultant lasers within the waveguide cavity, the interference effect and physical behaviors of the population inversion longitudinal and transversal spatial effects were observed. The resultant laser power is saturated if the waveguide is longer than a critical length, which is a function of the pumping power. Moreover, the resultant laser power density is a nonuniform function along the longitudinal dimension within the waveguide cavity. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 1196-1201 
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    Topics: Physics
    Notes: Packaging-induced strain is studied in high-power semiconductor lasers by a noninvasive optical technique. Fourier-transform photocurrent measurements with intentionally strained laser array devices for 808 nm emission reveal spectral shifts of optical transitions within the active region. These shifts by up to 10 meV serve as a measure for the strain status within the active layer of the devices and are compared with model calculations. For different packaging architectures we quantify the strain portion which is transmitted to the optically active region of the semiconductor device. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 1067-1072 
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    Topics: Physics
    Notes: We report systematic measurements of the temperature and field dependence of microwave losses in micron-size powders (∼3 μm) of the manganites Nd0.7Sr0.3MnO3, La0.7Ca0.3MnO3, La0.8Ba0.2MnO3, and La1.4Ca1.6Mn2O7. We fully confirm previous findings of a large increase in zero-field absorption, in La0.7Ba0.3MnO3 and La0.7Sr0.3MnO3, accompanying the onset of ferromagnetism and a concomitant colossal low-field magnetoimpedance (up to 80% at 600 Oe at room temperature). An oversimplified set of computations renders plausible support for interpreting these observations as arising from absorption in the spin system. Possible applications of these novel phenomena are also described. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 1213-1220 
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    Topics: Physics
    Notes: Langmuir probe theory, adapted to magnetized, partially ionized, low temperature processing plasmas with radial diffusion dominated by electron-neutral collisions, was verified in electron cyclotron resonance (ECR) plasmas. Plasma parameters such as plasma potential, electron temperature, plasma density, and the ratio of electron saturation current to ion saturation current (Ie*/Ii*) were measured by single-sided planar probe in various ECR plasmas (H2, He, N2, O2, Ar, and CF4). The neutral pressure was varied between 0.5 and 8.5 mTorr and the microwave power between 170 and 1250 W with good matching conditions; the reflected power was kept at less than 3% of the input power. The measured ratios of Ie*/Ii*, and other plasma parameters were consistent with the probe theory for pressures greater than 2.0 mTorr for various plasmas of Ar, He, H2, and N2. These results indicate that the electron-neutral collisional probe theory works well for magnetized ECR plasmas (magnetic flux densities of 0.8–1.0 kG). © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 1128-1135 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A phenomenon which has been termed "multilayered Rayleigh modes" has been presented in previous papers. This study aims to prove experimentally the existence of these waves in anisotropic periodically multilayered media. These modes result from a combination of Floquet waves which propagate in a periodically multilayered medium when all the Floquet waves are inhomogeneous. The experimental verification was done using an acousto-optic technique and a measurement of the reflected field, which was obtained with a hydrophone measurement system, on a carbon/epoxy composite plate. The experimental and calculated dispersion curves of the multilayered Rayleigh modes were then drawn. The coincidence of the curves was found quite good, thus confirming our theory. However, two modes were found by the acousto-optic technique not to fit into the theory. One experimentally detected mode was found to correspond to the Lamb mode of the plate and the other was not experimentally detected by the acousto-optic technique. Measurement of the reflected field for this mode, which was obtained with a hydrophone measurement system, and its comparison with the predicted reflected field make it possible to verify the existence of the mode. The combination of both experiments permit a good coincidence to be found. © 1999 American Institute of Physics.
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  • 158
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    Journal of Applied Physics 86 (1999), S. 1226-1229 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nuclear and magnetic structures of La2(Co1−xFex)16Ti have been studied by neutron powder diffraction for the compositions x=0.0,0.2,0.4. The compound crystallizes with the symmetry of space group R3¯m. Site occupancy results show significant departures from a purely statistical distribution, with the Ti atoms located in sites which interact weakly with La, and with the Co atoms occupying preferentially the sites with strong La interaction. These results are consistent with the enthalpies of formation of equiatomic alloys of rare earth and 3d elements. The spin ordering at all compositions and temperatures is ferromagnetic. At room temperature the moments are aligned along the c axis for the compositions x=0.0 and x=0.2, and form an angle of about 57° with c for x=0.4. This tilt angle is a function of temperature and the moment is aligned along c at 11 K, moving gradually towards the a,b plane as the temperature increases. © 1999 American Institute of Physics.
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  • 159
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    Journal of Applied Physics 86 (1999), S. 1221-1225 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dose dependence of as-implanted damage and the density of threading dislocations formed after MeV implants into Si is measured. The role of the damage and amorphization in the evolution of dislocation microstructure is assessed. As-implanted damage is analyzed by Rutherford backscattering spectroscopy and channeling. Defect etching is used to delineate threading dislocations in near-surface regions of annealed (900 °C, 30 min) samples. For a variety of implants with 1.1 μm projected range (600 keV B, 1 MeV P, and 2 MeV As) we observe a sharp onset for formation of threading dislocations with a peak in dislocation density at a dose of about 1×1014 cm−2, this dose depends on the ion mass. With a further increase in dose, the dislocation density decreases. This decrease, however, is drastically different for the different ions: sharp (4–5 orders of magnitude) reduction for P and As implants and slow decline for B implant. The sharp decrease in the density of threading dislocations at higher doses is correlated with the onset of amorphization observed by channeling for P and As implants. Our data for low-temperature implants provide conclusive proof that a reduction in the dislocation density for P and As implants is a result of amorphization. © 1999 American Institute of Physics.
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  • 160
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    Journal of Applied Physics 86 (1999), S. 1518-1522 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of different thicknesses have been vacuum deposited onto clean glass plates held at room temperature using the flash evaporation technique in a vacuum of 2×10−5 Torr. The structural characterization of the bulk and the thin films was carried out using x-ray diffraction, transmission electron microscopy, and selected area electron diffraction techniques. Electrical resistance and thermoelectric power of the films were measured in the same vacuum of 2×10−5 Torr in the temperature range 300–450 K. The conduction activation energy of the films was calculated using the electrical resistivity and thermoelectric power data of the films. The thickness dependence of the activation energy observed is attributed to the polycrystalline nature of the films. Grain growth and reorientation of the grains take place during the annealing process. The thickness dependence of electrical resistivity and thermoelectric power of the films are explained by the effective mean free path model [C. R. Tellier, Thin Solid Films 51, 311 (1978)]. The important physical parameters like mean free path, Fermi energy, power index of the energy dependant expression for the mean free path, the hypothetical bulk resistivity and the thermoelectric power have been calculated by the combined analysis of electrical resistivity and thermoelectric power. The electron-phonon scattering mechanism is found to be dominant in the material. © 1999 American Institute of Physics.
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  • 161
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    Journal of Applied Physics 86 (1999), S. 1273-1279 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The rate of decay of end effects in steady state heat conduction in a symmetric sandwich strip with anisotropic constituents and imperfect interfaces between the layers is studied. Two kinds of imperfect interfaces are considered: an imperfect interface which models a thin interphase of low conductivity and an imperfect interface which models a thin interphase of high conductivity. In the former case, the normal component of the heat flux is continuous at the interface, whereas the temperature field undergoes a discontinuity which is proportional to the normal component of the heat flux. In the latter case, the temperature field is continuous at the interface and the normal component of the heat flux exhibits a discontinuity proportional to a surface differential operator of the temperature, called the surface Laplacian. The characteristic rate of decay of end effects is given by the smallest real and positive root of a transcendental equation. This rate decreases as the discontinuity in the temperature or the heat flux across the interface increases, in either kind of the imperfect interface. Exact duality relations are shown to exist between the decay rate of end effects in strips with imperfect interfaces of low conductivity, and that in strips with imperfect interfaces of high conductivity. © 1999 American Institute of Physics.
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  • 162
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    Journal of Applied Physics 86 (1999), S. 1280-1286 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analysis of polycrystalline Au thin film interconnects of widths ranging from 850 to 25 nm, and lengths ranging from 1.0 μm to 20 nm which have been electrically stressed to the point of failure is presented. For the longer wires (widths 60–850 nm), the failure current density is typically found to be 1012 A m−2, essentially independent of the wire width, and then rapidly approaching zero for thinner wires. For the wider wires, failure occurs at the end towards the negative electrode; for narrow wires, failure tends to occur towards the center of the wire, as observed using scanning electron microscopy and atomic force microscopy. The mean time to failure for fixed current density is seen to decrease with decreasing wire width. The failure current density for a given wire width increases as the length decreases. An analysis of the temperature profile based on calculations of a simple model is presented which shows that this width-dependent behavior of narrow lines is not anticipated from the assumption of a homogeneous line subject to thermally-assisted electromigration alone. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 1287-1291 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si0.5Ge0.5/Si multiquantum-well structures are grown using a production-compatible ultrahigh vacuum chemical vapor deposition system. The structures are designed in order to obtain dislocation-free undulating strained layers used as the absorbing layers in photodetector structures. The Si/SiGe/Si stack on a silicon-on-insulator wafer is used as the waveguiding layer. Transmission electron microscopy and photoluminescence are used to characterize the undulating layers. A photoluminescence emission corresponding to the band edge "no phonon" transition is measured at a wavelength beyond 1.55 μm. Preliminary data from metal–semiconductor–metal photodetectors fabricated with this material show a responsivity of approximately 0.1 A/W at the telecommunication wavelength of λ=1.55 μm. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 1292-1297 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, we report a study of mosaic structures in partially relaxed Si0.7Ge0.3 epilayers grown on Si(001) substrates by x-ray double- and triple-axis diffractometry. The samples have different layer thicknesses and hence different degrees of strain relaxation. Our results show that, at early stages of strain relaxation, the films contain mosaic regions laterally separated by perfect regions. This is because the mosaic structure caused by a misfit dislocation is effectively localized in a lateral range of the layer thickness. Therefore, far from the dislocations, the film is virtually a perfect crystal. With the increase in the degree of strain relaxation, and consequently in the dislocation density, the mosaic regions of the layer expand while the perfect regions shrink and finally vanish completely. Moreover, our results indicate that the conventional method of estimating dislocation density from the x-ray rocking curve width fails in our case. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 1298-1305 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The composition of several Ga1−xAlxSb epitaxial layers of different thicknesses grown by molecular beam epitaxy on GaSb with x ranging between 0.1 and 0.8, has been obtained independently by high resolution x-ray diffraction, Rutherford backscattering spectrometry, and reflection high-energy electron diffraction. From the comparison between the results obtained by the different experimental methods, it has been possible to point out that the lattice constant of the layer increases nonlinearly with the Al content. A comparison with theoretical models has been done. A phenomenological equation has been derived for a correct analysis of the x-ray results. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 1306-1310 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic study of the effect of growth conditions (temperature, microwave power, and pressure) on the hydrogen incorporation and growth rate of (111) homoepitaxial diamond synthesized by microwave plasma assisted chemical vapor deposition is carried out by secondary ion mass spectrometry. Significant quantities of hydrogen incorporation in the (111) homoepitaxial diamond are detected for the growth conditions employed. Hydrogen concentration and growth rate are found to increase with an increase in the substrate temperatures. The increase of microwave power decreases the hydrogen incorporation and increases the growth rate. The effect of pressure rise is similar to that of microwave power. However, the effect of pressure rise over 50 Torr on hydrogen incorporation and growth rate is small. The decrease of hydrogen incorporation can be explained by the suppression of defects in the growing film by atomic hydrogen in the gas phase. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 1311-1316 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A quantitative model is proposed to elucidate and predict the dome-shaped surface topography resulting from CO2 laser heating of glass substrates. In the analysis, a permanent structural change in glass is induced by a higher glass transition temperature due to the faster cooling process, with a final topography being determined by the temperature history resulting from the absorbed laser energy. The analysis is validated by experiment, which focuses on the energies which trigger the permanent deformation and induce a dome-shaped topography. The dimensions (maximum height and base area) of the bump show a logarithmic dependence on energy as expected from the theory. Using the constants determined from the experimental data and our analysis, bump profiles over a range of laser fluences are predicted. These two constants provide the information for determining the new glass transition temperature and the threshold energy needed to form a permanent bump. The result also suggests that the topography is mostly determined from the conditions at the end of the laser pulse. The effects of thermally induced stress on the model, and the physics of bump formation in chemically strengthened glass are addressed. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 2191-2195 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Barium hexaferrite (BaM) thin films were deposited on (0001) LiTaO3 substrates by pulsed laser deposition. Effects of the substrate temperature and oxygen gas pressure on the formation and quality of these films were studied. Films deposited at a substrate temperature of 800 °C and an oxygen pressure around 0.23 mbar showed the best c axis normal to the film plane with locked in-plane orientation. The saturation magnetization Ms and anisotropy field Ha measured by vibrating sample magnetometer were almost the same as those reported on bulk barium ferrite. Decreasing oxygen pressure hinders the formation of the Ba layer in BaM magnetoplumbite structure and gives rise to the spinel phase, which greatly decreases coercivity Hc of the films and finally destroys the whole BaM structure. Effects of the lattice mismatch and substrate-induced strains on the film structure were also studied. It was found that barium ferrite thin films grown on LiTaO3 substrates tend to choose a matching mode with compressional strains rather than shear strains. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 2200-2207 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The rhombohedral Pr2Fe17Hx compounds with the Th2Zn17 structure have been prepared for x=0–5. Their lattice parameters and Curie temperatures have been determined from powder x-ray diffraction and thermomagnetic measurements, respectively, and their Mössbauer spectra have been measured between 4.2 and 295 K. The Mössbauer spectra for x=0, 1, and 2, obtained between 4.2 and 295 K, and those of Pr2Fe17H3, obtained above 90 K, have been analyzed with a seven sextet model, indicative of a basal magnetization in these compounds. The Mössbauer spectra of Pr2Fe17H3 below 90 K, of Pr2Fe17H4 between 4.2 and 295 K, and of Pr2Fe17H5 above 155 K, have been analyzed with a four sextet model, indicative of an axial magnetization in these compounds over the indicated temperature ranges. The axial magnetic anisotropy results from a combination of lattice expansion upon hydrogenation and contraction upon cooling, and the relative importance of the praseodymium Stevens coefficients. A magnetic phase diagram for the Pr2Fe17Hx compounds is proposed on the basis of their magnetic Mössbauer spectra. The Mössbauer spectra of Pr2Fe17H5 indicate that, above 155 K, the two hydrogen atoms occupying one third of the tetrahedral 18g sites are rapidly jumping, on the Mössbauer time scale of 100 ns, between the six available 18g positions, a jumping which slows down or ceases below 155 K. The compositional dependence of the hyperfine parameters of the Pr2Fe17Hx compounds indicates an initial filling of the interstitial 9e sites by the first three hydrogen atoms and then a subsequent filling of the interstitial 18g sites by the last two hydrogen atoms. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 2215-2219 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties of LiNbO3 ceramic pellets were investigated by impedance spectroscopy in the temperature range of 450–800 °C. Impedance data are presented in the Nyquist plot which, in addition to the separation of grain and grain boundary contributions, allows the determination of the relaxation frequency of samples. The results of bulk electrical conductivity and its activation energy, confirmed by measuring samples with different geometrical parameters, are presented. Relaxation frequencies follow an Arrhenius behavior with the same activation energy found for the electrical conductivity. Relaxation frequencies were also used to calculate bulk dielectric constants and the results are compared to the behavior of the real part of the sample dielectric constant. © 1999 American Institute of Physics.
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  • 171
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    Topics: Physics
    Notes: A dilatometer based on the cantilever beam concept has been developed. The dilatometer is easy to use and capable of measuring transverse strain response of soft polymer films in a broad strain range (from 10−7 to 10−1) without mechanical constraining of the sample. It is capable of detecting strain over a relatively wide frequency range from mHz to above 100 Hz under different load and temperature. Using the setup, the electric field induced transverse strains of the electrostrictive poly(vinylidene fluoride-trifluoroethylene) copolymer films were characterized which shows that a large transverse strain can be achieved in this class of polymer. In addition, the effect of mechanical tensile load on the transverse strain was also evaluated and the results show that the strain response will be affected by the load. However, depending on the load level, the strain response of the polymer film under a given electric field may increase or decrease with load. Based on the phenomenological theory, it is shown that for a ferroelectric based material, the mechanical load will shift the Curie temperature. Hence, to a large extent, the change of the strain response with load observed here can be understood by linking it to the strain change with temperature. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 2220-2225 
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    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pb(Zr0.53Ti0.47)O3 (PZT) on diamond is a potentially robust structure for surface acoustic wave (SAW) device applications. We have studied the growth and physical characteristics of PZT on diamond and other substrates by pulsed laser deposition. Under a broad range of processing conditions we explored, PZT deposited directly on diamond is almost exclusively pyrochlore-type, which is nonferroelectric. Growth of ferroelectric perovskite PZT is promoted via the use of a PbTiO3 buffer layer within a narrow window of processing parameters [i.e., P(O2)=100–200 mTorr, T=550–650 °C, 1–2 J/cm2]. Similar results were also obtained for deposition of PZT on Si, Pt-coated Si, and Pt-coated diamond substrates. The dielectric constants of the perovskite PZT films are 500–650 at 1 V and 100 kHz. The piezoelectric coefficients of these films are in the range of 50×10−12–350×10−12 m/V. The SAW velocity of perovskite PZT films is similar to that of highly oriented sputter deposited ZnO films. The acoustic attenuation in perovskite PZT films is approximately three times higher than that in ZnO, however. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 1346-1354 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The properties of SiO2 film and the Si/SiO2 interface formed by remote plasma enhanced chemical vapor deposition with the addition of chlorine into SiH4–N2O have been investigated. With the chlorine addition, the deposition rate increased at low deposition temperatures but at temperatures above 150 °C, it decreased because of the desorption of surface halide species. Chlorine at the Si/SiO2 interface prevented further subcutaneous oxidation and formed strong, terminal site Si–Cl bonds which reduced the interface state density. The substitution reaction of O and H with Cl in the bulk oxide film leads to a disordered film structure and decreased hydrogen concentration. The surface roughness increased and the refractive index decreased with increased Cl2 addition. With chlorine addition of less than 6 vol %, the interface trap density (located at ∼Ev+0.3–0.4 eV) significantly decreased down to the 1–3×1011 eV cm2 level at the Si midgap. At high chlorine partial pressure and temperature, the local interface trap density (located at ∼Ev+0.7–0.8 eV) increased due to increased structural disorder resulting from breakage of the Si–O bond. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 1355-1362 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technique for achieving epitaxial growth of (001)-oriented CoSi2 on strained epitaxial layers of Si1−xGex(001) is described. The technique is based on a variation of the template method, and is designed to control the local environment of Co atoms at the CoSi2/SiGe interface. The effects of the Co–Ge interactions on the interfacial reaction and the epitaxial orientation and the morphology of the silicide film were investigated. This reaction was found to cause pitting in (001)-oriented CoSi2 films, and to stabilize the (221) orientation for films codeposited under conditions where CoSi2(001) growth is achieved on Si(001) substrates. The (221)-oriented CoSi2 films were islanded after annealing at 700 °C. The islands were terminated by (111) and (110) facets inclined at 15.8° and 19.5°, respectively, from CoSi2 [221] towards CoSi2 [114]. These results were interpreted in terms of reduction of interfacial and surface energies, and geometric effects. Silicide films up to 730-Å-thick were deposited and annealed up to 900 °C. The films were stable against agglomeration, and retained tensile stress in the CoSi2 layer after annealing at 700 °C. The rms roughness of the CoSi2 films was comparable to that of the Si(001) substrate—less than 15 Å over areas as large as 20×20 μm2. Films annealed at 900°C were severely agglomerated. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 1647-1652 
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    Topics: Physics
    Notes: Ferroelectric liquid crystalline elastomers (FLCEs) form a novel class of materials, in which the properties of macroscopically oriented ferroelectric liquid crystals can be combined with those of elastomers. The (direct and the inverse) piezoelectric effect in these systems is measured and analyzed on a molecular level. Backed also by x-ray measurements, a model is suggested that interprets the observed piezoelectricity caused by electrically or mechanically induced motions of smectic layers which are inclined with respect to the sample surface. The strength of the observed electromechanical effects compares well with (or exceeds) that of classical piezoelectric materials like barium titanate, lead zirconate titanate or poled polymers like poly(vinylidene fluoride), making FLCEs an interesting candidate for applications in microsystems technology. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 1662-1669 
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    Topics: Physics
    Notes: Lead zirconate titanate (PZT) thin films on platinized silicon were fabricated and their structural development upon annealing was characterized by x-ray diffraction and transmission electron microscopy (TEM). The amount of a transient intermetallic phase Pt3Pb was found initially to increase with annealing time and to decay after reaching a maximum. The kinetic process of growth and decay was simulated by using the Avrami equation. The Avrami coefficient n and growth rate constant k were determined by comparing the experimental results and the simulated curves, from which activation energies of 40 and 145 kJ/mol were obtained for the growth and decay of the intermetallic Pt3Pb phase, respectively. The perovskite PZT was found by using TEM to nucleate epitaxially on top of the Pt3Pb phase. Evidence is presented that the Pt3Pb phase plays a major role in determining the crystallite's orientation at the nucleation stage of the perovskite PZT. This depends strongly on the annealing temperature and the orientation changes little during the following growth process. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 1670-1675 
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    Topics: Physics
    Notes: Starting with Burt's envelope function theory, we calculate the transmission coefficients of holes across an InP/In1−xGaxAsyP1−y/In0.53Ga0.47As heterointerface while varying the width and gallium and arsenic fractions of the InP lattice-matched quaternary compound (x=0.47y). While comparing our results to the case of an abrupt InP/In0.53Ga0.47As interface, we find that the transmission coefficients of both heavy- and light-holes can be enhanced significantly for a 60-Å-wide quaternary layer with an arsenic fraction y=0.4 (x=0.188). This should lead to an enhanced hole injection efficiency of Pnp heterojunction bipolar transistors using the heterointerface analyzed here as an improved design of the emitter-base junction. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 1693-1698 
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    Topics: Physics
    Notes: Compton scattering can be used to determine the electron densities of tissues for medical applications and those of materials for industrial applications. Much work has been devoted in solving the reconstruction problem. Norton proposed an analytic transform method for the reconstruction of Compton scattering tomography [J. Appl. Phys. 76, 2007 (1994)]. However, it is difficult to relate the response function presented by Norton to the measurement quantity. The aim of this article is to present an improved form of the detector response function which corresponds to the actual measurement and to verify the validation of the transform method for this problem. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 1716-1723 
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    Topics: Physics
    Notes: We investigate theoretically the properties of the fundamental and second harmonic components of the Bessel beam with a finite aperture, the Bessel–Gauss beam, whose transverse profile is given by the product of Bessel and Gaussian functions. The analysis is based on the linearized and quasilinear solutions of the Khokhlov–Zabolotskaya–Kuznetsov nonlinear wave equation. The analytical and approximate expressions are derived for the fundamental and the second harmonic generation in this beam. It is thereby demonstrated that under certain circumstances, the second harmonic in the Bessel–Gauss beam is nearly radially nondiffracting, and that the beamwidth is approximately one-half of that of the fundamental. This result is an extension to the previous work on the nonlinearity of the Bessel beam, where the infinite extent of the beam has been assumed. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 1699-1709 
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    Topics: Physics
    Notes: Localized longitudinal space-charge waves in a transport channel with a resistive wall are investigated experimentally. The space-charge waves with various pulse widths are generated in electron beams with energies of 3.0–8.5 keV and currents of 30–135 mA, and they are transported through a resistive channel with a resistance of 5–10 kΩ and a length of 1 m. The resistive channel, made of a glass tube with a resistive material coating, is surrounded by a long solenoid which provides the focusing for the beam. The localized space-charge waves are measured with current monitors and energy analyzers at the entrance and exit of the resistive channel, and the wave-amplitude growth and damping rates are determined. The measured results are compared with the theory in the long-wavelength range. For localized waves with short widths, where the long-wavelength approximation is not valid any more, dispersion and distributed capacitance effects on the growth/damping rates are discussed. In addition, preliminary results on the energy width measurements of space-charge waves are presented. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 1736-1743 
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    Source: AIP Digital Archive
    Topics: Physics
    Notes: The model presented considers surface kinetics processes, such as adsorption/desorption of hydrocarbon radicals, thermal dehydrogenation, evaporation, and carbon insertion into silicon, together with the bulk diffusion equation. The calculations performed show that surface protrusions present preferential locations for diamond nucleation due to a superposition of diffusion fluxes of carbon that is able to decrease the carbonization time on the protrusion tips by an order of magnitude compared with the untreated surfaces. This mechanism allows us to explain a number of observations in which the diamond is found to nucleate on the tips of surface protrusions. It is suggested that the surface carbon increases adsorption energy for hydrocarbon species and their concentration in the adlayer, resulting in high supersaturation which provokes nucleation. The analysis also shows that increased methane concentration in the feed gas and lower substrate temperature provide conditions for surface nucleation without a preliminary carbonization stage. The resulting diagram, outlining the operational parameters for both nucleation modes (via or without carbonization) on a Si (1,0,0) surface, is given. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 1754-1758 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An opposed-contact photoconductive semiconductor switch, with a n+ region next to the cathode electrode has been simulated. Physical conditions during the pulse charging state, prior to high power switching, are analyzed in order to explain the increased hold-off characteristic of such devices. Results show that the introduction of the n+ region near the cathode inhibits the flow of electrons at the n+/semi-insulating interface until very high fields are reached. The formation of trap-filled regions near the contacts and the resultant inhomogeneous device characteristics that lead to breakdown are thereby shifted to higher voltages. Thus, for switches with a n+ region next to the cathode, the breakdown voltage due to unstable filamentary conduction is also increased beyond those achieved previously, allowing for higher power operation. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 1765-1767 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room temperature photoreflectance (PR) was used to investigate the surface state densities of GaAs and In0.52Al0.48As surface intrinsic-n+ structures. The built-in electric field and thus the surface barrier height are evaluated using the observed Franz–Keldysh oscillations in the PR spectra. Based on the thermionic emission theory and current-transport theory, the surface state density as well as the pinning position of the Fermi level can be determined from the dependence of the surface barrier height on the pump beam intensity. Even though this method is significantly simpler, easier to perform, and time efficient compared with other approaches, the results obtained agree with the literature. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 1774-1776 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Plasmon loss features of porous silicon (PS) layers consisting of Si nanoparticles with average diameters of 3.6–4.5 nm were studied using x-ray photoelectron spectroscopy. The volume plasmons of the Si nanoparticles in the as-prepared PS layers have the same energy as that of bulk Si (17.4 eV). The surfaces of the PS layers were sputter etched by argon (Ar) ion bombardment to remove any hydrogen passivation. The plasmon energy for the surface-sputtered PS layers increases from 17.4 eV to either ∼17.9 or 18.5 eV depending on the size of the nanoparticles, while the energy for bulk Si remains the same after the surface sputtering. A qualitative model with the plasma frequency modified from the free electron model was introduced to explain the observed characteristic features in the volume plasmons. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 1028-1034 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic after-effect measurements were performed on an array of etched monocrystalline disk-shaped Fe dots of thickness 1 nm and diameter 200 nm. From room temperature down to 5 K, the dependence on applied field and temperature of the relaxation rate was well described on the basis of the Néel–Brown model of magnetization reversal by a rotational Brownian motion. The distribution of anisotropy fields of the dots was deduced from the nonlogarithmic relaxation rate SH,T(t) at room temperature by using a scaling procedure. From the analysis of the field dependence of SH,T(t), the activation volume was estimated at approximately 1500 nm3, with a tendency to increase slightly for temperatures below 100 K. In terms of micromagnetic reversal mechanisms, such a small value indicates that a noncoherent reversal mode occurs in the dots. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 1041-1046 
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    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the appropriate size range it can be argued that the absolute value of a negative curling nucleation field in a prolate spheroid is a good approximation for the switching field in any regularly shaped ferromagnetic body, which has the same volume, provided the correct demagnetizing field is used. An example is given for the case of a square prism. The discrepancy between this theory and some experimental results is claimed to be due to volume and surface anisotropies in the experimental particles. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 1047-1052 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The perpendicular magnetic anisotropy, coercive field, and initial magnetization curves of amorphous TbxFe1−x (x between 0.15 and 0.32) were measured at room temperature for samples prepared under a wide variety of preparation conditions, including both e-beam co-evaporation and dc magnetron cosputtering. The effect of growth temperature, annealing, and thickness were investigated. The perpendicular magnetic anisotropy shows little dependence on substrate type, sample thickness, or details of the deposition such as sputtering or e-beam evaporation, but is strongly dependent on growth temperature, increasing with increasing growth temperature up to nearly 300 °C. Coercivity on the other hand is extremely dependent on microstructure, and hence, on details of preparation, substrate type, and thickness. It is much larger in evaporated films than in similarly prepared dc magnetron sputtered films. Normalized coercivity decreases monotonically with increasing growth temperature. The dominant mechanism appears to be domain wall pinning in the bulk of the film due to columnar microstructure. High growth temperature stabilizes the material against subsequent annealing which tends to eliminate the anisotropy and, more slowly, the coercivity. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 1073-1081 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Without external fields, ferroelectric materials will have multidomain configuration in the ferroelectric state. Detailed analysis found that twinning may not be treated as random since the number of orientations for the domain walls are limited in a given symmetry change during a ferroelectric phase transition. In each finite region of a large crystal or in small crystallites, a particular set of twins is favored under certain boundary conditions, which consists of only two of the low temperature variants. Statistic models of random distribution of domains do not apply for calculating the physical properties of such twin structures. However, one could derive the two domain twin properties by using the constitutive equations and appropriate mechanical boundary considerations. This paper presents a theoretical analysis on such a two-domain twin system, including its global symmetry and effective material properties resulting from different twinning configurations. Numerical results are derived for LiNbO3 and BaTiO3. © 1999 American Institute of Physics.
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  • 189
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    Journal of Applied Physics 86 (1999), S. 1096-1105 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: During ion etching (IE) processes used for making a Pt electrode in the fabrication of ferroelectric capacitors, the film is exposed to radiation and energetic ion bombardment. The influence of such processes on polarization-electric field characteristics of lead zirconate titanate thin film capacitor has been reported by E. G. Lee [Appl. Phys. Lett. 69, 1223 (1996)]. A large field shift and a constriction in the hysteresis loop are experimentally observed. For these authors, this behavior is probably due to the existence of space charges trapped near electrodes. For a better understanding of these phenomena, we have developed a model of ferroelectric capacitor based on the phenomenological Landau–Devonshire theory. A two-dimensional lattice of dipoles is assumed to describe the film. By solving Poisson's equation, the electric-field distribution inside the film is calculated, which allows us to locally determine the evolution of the polarization by minimizing free energy. IE effects and probably the existence of space charges in the film are introduced by means of a doping layer in the film near the electrode. The influence of important parameters such as doping level, and thickness of the doped layer on the hysteresis loop are investigated. Main experimental thin film electric behaviors are well reproduced and explained considering dipoles switched inside the lattice. Results are interpreted by splitting the hysteresis loop deformation into two effects with different origins: a constriction effect related to the number of impurities inside the film and a shift effect related to the asymmetrical impurities distribution. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 1136-1144 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article we show that the global thermal resistance to flow between a volume and one point can be reduced to unprecedented levels by shaping the external boundary of each volume element. This degree of freedom is optimized, next to internal features such as the shape and volume fraction of the high-conductivity channels. The volume is covered in a sequence of optimization and assembly steps that proceeds toward larger sizes. The resulting architecture is a leaf-like tree structure with high-conductivity nerves and low-conductivity leaf material. The same constant resistance characterizes the flow from each point on the periphery of the structure to the common sink point. Nearly optimal structures in which the leaf shapes are replaced by needle-like (triangle-in-triangle) shapes are also developed. The fractal-like character of these designs and their relevance to the trend toward fractal-like properties in natural flow structures are discussed in the concluding section of the article. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 1167-1169 
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    Topics: Physics
    Notes: We compare the local crystallographic orientations associated with stress voids in Al–1Si–0.5Cu (wt %) with those in pure copper interconnects. Orientations were sorted by whether grains were immediately adjacent to voids. Grains adjacent to voids in Al–Si–Cu showed a 〈111〉 fiber texture that was slightly stronger than those in intact regions. This is in contrast to copper, which showed weaker local 〈111〉 texture around voids. We postulate the difference to be due to the relative effectiveness of the diffusion paths available in the lines. For Al–Si–Cu, the presence of defects associated with precipitates may allow more rapid diffusion than grain boundaries. Voiding in copper, which is free from such defects, depends more on grain boundary structure. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 713-718 
    ISSN: 1089-7550
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    Topics: Physics
    Notes: We describe temporally and spectrally resolved measurements of the material differential gain, differential refractive index, and linewidth enhancement factor for a multilayer superlattice intended for use in midwave-infrared semiconductor lasers. We find good agreement between measured quantities and theoretical predictions based on a superlattice K⋅p formalism. The superlattice was designed for suppression of Auger recombination and intersubband absorption, and we find that the strategies employed in this process result in other characteristics that are desirable in a semiconductor laser gain medium. Specifically, for carrier densities and wavelengths appropriate to threshold in an optimized cavity configuration, this structure has a differential gain of approximately 1.5×10−15 cm2, a value comparable to that reported for near-infrared strained quantum wells. The peak gain and peak differential gain are nearly spectrally coincident, leading to a small value for the differential index. The large differential gain and small differential index result in a linewidth enhancement factor of less than one. This indicates that filamentation in high-power lasers based on this superlattice should be suppressed and that this structure is attractive for use in midwave-infrared lasers designed for spectrally pure operation. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 746-751 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Aluminum nitride (AlN) has been used as an encapsulant for annealing nitrogen (N), arsenic (As), antimony (Sb), aluminum (Al), and boron (B) ion-implanted 6H-SiC. Atomic force microscopy has revealed that the AlN encapsulant prevents the formation of long grooves on the SiC surface that are observed if the AlN encapsulant is not used, for annealing cycles up to 1600 °C for 15 min. Secondary ion mass spectrometry measurements indicated that the AlN encapsulant is effective in preserving the As and Sb implants, but could not stop the loss of the B implants. Electrical characterization reveals activation of N, As, Sb, and Al implants when annealed with an AlN encapsulant comparable to the best activation achieved without AlN. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 764-767 
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    Topics: Physics
    Notes: The rapid annealing behavior of several kinds of defects in semi-insulating GaAs irradiated with various neutron fluences has been characterized using a photoluminescence technique. In this experiment, transmutation impurities form not only donors, but also acceptors, GeAs (the 1.4783 eV peak). The intensity ratio of the 1.4783 eV peak (GeAs) to the 1.4917 eV peak (CAs) increases with the neutron dose. This finding is consistent with the expected increase of GeAs produced by transmutation. We also see that short time heat treatment leads to the increase of antisite defects GaAs and of complex centers IGa-VAs after neutron irradiation. Based on analysis of the rapid annealing process in comparison with the regular annealing process, it is concluded that the two kinds of defects GaAs and IGa-VAs are the products of defect reactions during the annealing process. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 7065-7070 
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    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of Shockley–Read–Hall, Auger, radiative, and intrinsic surface base recombination processes in the emitter-base space-charge region on the current gain of Pnp AlGaAs/GaAs heterojunction bipolar transistors are analyzed. At low forward emitter-base bias, the current gain of a typical Pnp AlGaAs/GaAs heterojunction bipolar transistor is shown to be reduced substantially below its value calculated while neglecting recombination currents in the emitter-base space-charge region. Excellent agreement between theory and experiment is found for the current gain variation versus collector current density for a Pnp device recently reported by Slater et al. [IEEE Electron Device Lett. 15, 91 (1994)]. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 7094-7099 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe an approach to scanning capacitance microscopy. A mixing technique is employed for imaging local capacitance variations simultaneously with the sample topography using an atomic force microscope (AFM) with a conductive tip. A SiO2/Si sample with lateral pn junctions formed by ion implantation has been investigated. Microwave signals incident on the metal–oxide–semiconductor (MOS) structure formed by the AFM tip and the sample give rise to mixing signals due to the nonlinear voltage dependence of the space charge capacitance in the Si. In our experiments two microwave input signals with frequencies f1 and f2 and a variable dc bias voltage were applied to the tip-sample MOS structure. The dependence of the generated sum frequency and third harmonic signals on the dc sample voltage shows that the f1+f2 and 3 f signals are proportional to dC/dV and d2C/dV2, respectively. Images of the sum frequency and third harmonic signals delineating the pn junctions on our model sample are presented and the dc bias voltage dependence of the images is discussed. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 7116-7122 
    ISSN: 1089-7550
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    Topics: Physics
    Notes: A photolabile triazeno polymer was irradiated with pulsed excimer laser light at 248 nm and 30 ns pulse width. The ablation fragments were analyzed using time-of-flight (TOF) mass spectrometry. At fluences below 1.3 J/cm2, only neutral products were found. At these fluences, N2 is by far the most intense neutral signal along with measurable phenyl radical (mass 76) production. The N2 TOF shows a fast shoulder corresponding to kinetic energies of about 1.1 eV and a long slow tail persisting for hundreds of microseconds. The tail is attributed to delayed emission of reaction products from the polymer. The kinetic energy of the fast peak is attributed to direct ejection of products from surface sites undergoing exothermic decomposition. A weaker signal due to the phenyl radical is also observed. The observed fluence dependence of the two major products is highly nonlinear and is shown to fit an Arrhenius equation. We discuss the implications of these measurements regarding photochemical versus photothermal processes. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 7129-7138 
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    Topics: Physics
    Notes: The channelspark, a low accelerating voltage, high current electron beam accelerator, has been used for ablation of materials applied to thin film deposition. The channelspark operates at accelerating voltages of 10 to 20 kV with ∼1500 A beam currents. The electron beam ionizes a low-pressure gas fill (10–20 mTorr Ar or N2) to compensate its own space charge, allowing ion focused transport. Ablation of TiN, Si, and fused silica has been studied through several plasma diagnostics. In addition, thin films of SiO2 have been deposited and analyzed. Strong optical emission from ionized species, persisting for several microseconds, was observed in the electron beam ablated plumes. Free electron temperatures were inferred from relative emission intensities to be between 1.1 and 1.2 eV. Dye-laser-resonance-absorption photography showed Si atom plume expansion velocities from 0.38 to 1.4 cm/μs for several pressures of Ar or N2 background gas. A complex, multilobed plume structure was also observed, yielding strong indications that an electron beam instability is occurring, which is dependent upon the conductivity of the target. Nonresonant interferometry yielded line-averaged electron densities from 1.6 to 3.7×1023 m−3 near the target surface. Resonant UV interferometry performed on Si neutral atoms generated in the ablation plumes of fused silica targets measured line integrated densities of up to 1.6×1016 cm−2, with the total number of ablated silicon neutrals calculated to be in the range 2.0×1015 to 5.0×1013. Electron beam deposited films of fused silica were microscopically rough, with a thickness variation of 7%. The average SiO2 deposition rate was found to be about 0.66 nm/shot. The electron beam-deposited fused silica films had accurately maintained stoichiometry. Ablated particulate had an average diameter near 60 nm, with a most probable diameter between 40 and 60 nm. For SiO2 targets, the mass of material ablated in the form of particulate made up only a few percent of the deposited film mass, the remainder being composed of atomized and ionized material. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 7156-7159 
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    Topics: Physics
    Notes: The electron stimulated oxidation of Al(111) using H2O(g) as a source of oxygen has been investigated at 300 K using near edge x-ray absorption fine structure (NEXAFS) and Auger electron spectroscopy. Irradiation with electrons (100 eV, 50 μA/cm2) produced thick Al2O3 film layers (up to 15 Å), compared to the films grown thermally (4 Å) by the same water exposure. A preferential normal orientation of the O–Al bonds was found for the films grown by the electron assisted process, causing the O K-edge NEXAFS spectra to depend on the incident angle of the polarized x-ray beam. In contrast, little polarization of the O–Al bonds was found for the case of Al2O3 films grown by thermal oxidation in H2O(g). © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 7183-7185 
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    Source: AIP Digital Archive
    Topics: Physics
    Notes: SiGe/Si p-channel heteroepitaxial field effect transistor test structures in Si were fabricated by molecular beam epitaxy. Combined high-resolution transmission electron microscopy and energy-loss filtered imaging have been used to quantitatively determine the nanoscale Ge distribution across the SiGe alloy channel. The alloy grading at the edges of the channel has been found to be asymmetrical due to Ge segregation, with an exponential-like extended distribution directed towards the surface. The results agree well with the predictions of segregation theory and indicate that the concentration of Ge in the extended distribution lay in the range 10%–1% over a distance of several nanometers from the body of the channel. Secondary ion mass spectrometry measurements upon the same samples were insensitive to this short range extended Ge distribution. © 1999 American Institute of Physics.
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