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  • 1
    Electronic Resource
    Electronic Resource
    Ion beam induced epitaxy of deposited amorphous Si and Si-Ge films (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2342-2344 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The epitaxial recrystallization of amorphous electron beam deposited silicon and silicon-germanium layers on 〈100〉 silicon substrates was induced by a 2.5 MeV Ar beam irradiation in the temperature range of 200–400 °C. Even in films with bulk oxygen concentration of 0.5 at. %, layer-by-layer regrowth was observed with an order of magnitude reduction in growth rate when compared to clean, implanted amorphous silicon. Irradiation of codeposited Si-Ge amorphous layers results in the layer-by-layer regrowth of a Si88Ge12 alloy. Ion beam assisted epitaxy of Si and Si-Ge was found to be sensitive to interfacial cleanliness, but layer-by-layer regrowth was observed for samples that did not demonstrate regrowth under conventional furnace annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101523
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  • 2
    Electronic Resource
    Electronic Resource
    Single-crystal growth of CoSi2 (110) on Si (110) (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2075-2077 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality epitaxial thin films of CoSi2(110) are grown for the first time on Si(110) surfaces using UHV template methods. Utilization of thin (10–15 A(ring)) room-temperature deposits, followed by annealing, eliminates the role of long-range diffusion during the reaction to CoSi2 and produces epitaxial thin films with a single, coherent orientation. These thin epitaxial films can then be used as templates for further homoepitaxial growth of silicide. The thicker films are also of a single epitaxial orientation and exhibit χmin's as low as 5% in Rutherford backscattering. Misfit in two orthogonal directions is taken up by two distinct sets of interfacial defects which appear to have different critical thicknesses.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102110
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  • 3
    Electronic Resource
    Electronic Resource
    Electrical and structural properties of Si/CrSi2/Si heterostructures fabricated using ion implantation (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1260-1262 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using high dose implantation of Cr+ into (111)-oriented Si, followed by annealing, we have created continuous, buried layers of CrSi2 in Si. The layers are stoichiometric and epitaxially aligned along one of the substrate 〈111〉 directions. Results of temperature-dependent resistivity and Hall measurements on the early layers show that they are p-type degenerate semiconductors consistent with data for bulk samples. More recent layers appear to be single crystal with [0001] parallel to [111] and are n type with lower carrier density.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103334
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  • 4
    Electronic Resource
    Electronic Resource
    Tetragonal and monoclinic forms of GexSi1−x epitaxial layers (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 222-224 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of strains on the local crystallographic symmetry and structure of a Si/GexSi1−x model heterostructure grown on a (100) silicon substate was studied using convergent beam electron diffraction techniques and a cross-sectional specimen geometry. The alloy layers are seen to distort into relaxed tetragonal and monoclinic structures which are dependent on position and/or alloy composition. These observations can be explained in terms of strain relaxation in a thin-film specimen and deviations of the substrate from a perfect (100) orientation. The results have implications not only for the use of cross-sectioned specimens in the characterization of strained-layer heterostructures, but also for the band engineering of Si/GexSi1−x strained-layer superlattices and other materials which are grown on vicinal (100) and other low-symmetry substrate orientations. In particular relaxed tetragonal and monoclinic structures may be quite relevant to the emerging science of strain-induced lateral confinement of carriers in quantum well semiconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101015
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  • 5
    Electronic Resource
    Electronic Resource
    Depth profiling of vacancy clusters in MeV-implanted Si using Au labeling (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2980-2982 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technique for profiling the clustered-vacancy region produced by high-energy ion implantation into silicon is described and tested. This technique takes advantage of the fact that metal impurities, such as Au, are trapped in the region of excess vacancies produced by MeV Si implants into silicon. In this work, the clustered-vacancy regions produced by 1-, 2-, and 8-MeV Si implants into silicon have been labeled with Au diffused in from the front surface at 750 °C. The trapped Au was profiled with Rutherford backscattering spectrometry. The dynamics of the clustered-vacancy region were monitored for isochronal annealing at 750–1000 °C, and for isothermal annealing at 950 °C, for 10–600 s. Cross-sectional transmission electron microscopy analysis revealed that after the drive-in anneal, the Au in the region of vacancy clusters is in the form of precipitates. The results demonstrate that the Au-labeling technique offers a convenient and potentially quantitative tool for depth profiling vacancies in clusters. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122650
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  • 6
    Electronic Resource
    Electronic Resource
    Transient enhanced diffusion from decaborane molecular ion implantation (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2015-2017 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transient enhanced diffusion (TED) from implantation of 5 keV B10H14 and 0.5 keV B ions has been quantified and compared for nominal boron doses of 1014 and 1015 cm−2. Boron diffusivity during annealing was extracted from secondary ion mass spectroscopy depth profiles of diffused marker layers in boron doping-superlattices and the actual implanted B dose was independently measured by nuclear reaction analysis. Comparable enhancements were observed from both ions. Transmission electron microscopy analysis revealed that both boron- and decaborane-implanted samples were amorphized at a nominal 1015 cm−2 B dose. A comparison with data from low energy Si implants revealed a similar dependence of diffusivity enhancement on implant dose. These findings are consistent with the understanding that TED is caused by the interstitial supersaturation resulting from a number of excess interstitials approximately equal to the number of implanted atoms which can become substitutional in the silicon lattice. Accordingly, no contribution to TED is expected from the hydrogen in the B10H14 ions and none is observed. Furthermore, there is no detectable effect in the diffusion profiles which can be attributed to a difference in the ion damage produced by the decaborane molecule and the boron atom. In both cases the reduction in diffusivity enhancement is due only to proximity of the implantation-induced excess interstitials to the wafer surface. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122353
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  • 7
    Electronic Resource
    Electronic Resource
    Response to "Comment on ‘Time dependence of dopant diffusion in δ-doped Si films and properties of Si point defects' '' [Appl. Phys. Lett. 65, 1320 (1994)] (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1322-1323 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113006
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  • 8
    Electronic Resource
    Electronic Resource
    Time dependence of dopant diffusion in δ-doped Si films and properties of Si point defects (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 312-314 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion of Sb and B in thin Si films grown by low temperature molecular beam epitaxy is investigated in the temperature range 750–900 °C for times of 0.25–60 h. The small spatial extent of the initial δ-function-like dopant profiles allows the detection of very small diffusional displacements. The dopant atoms are used as tracers of Si point defects (vacancies and self-interstitials). Diffusion of Sb is found to be enhanced relative to equilibrium values, while that of B is retarded. We propose a model based on an initial supersaturation of vacancies. Matching this model to the experimental data allows the extraction of the vacancy diffusivity, the activation energy of vacancy formation, and the recombination lifetime of interstitials. The results show that interstitial and vacancy populations cannot be considered independent at low temperature, as has been previously suggested.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111189
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  • 9
    Electronic Resource
    Electronic Resource
    Implantation and transient B diffusion in Si: The source of the interstitials (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2305-2307 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during initial annealing, due to Si interstitials being emitted from the region of the implant damage. The structural source of these interstitials has not previously been identified. Quantitative transmission electron microscopy measurements of extended defects are used to demonstrate that TED is caused by the emission of interstitials from specific defects. The defects are rodlike defects running along 〈110〉 directions, which consist of interstitials precipitating on {311} planes as a single monolayer of hexagonal Si. We correlate the evaporation of {311} defects during annealing at 670 and 815 °C with the length of the diffusion transient, and demonstrate a link between the number of interstitials emitted by the defects, and the flux of interstitials driving TED. Thus not only are {311} defects contributing to the interstitial flux, but the contribution attributable to {311} defect evaporation is sufficient to explain the whole of the observed transient. The {311} defects are the source of the interstitials. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112725
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  • 10
    Electronic Resource
    Electronic Resource
    Plasma enhanced chemical vapor deposition of titanium nitride thin films using cyclopentadienyl cycloheptatrienyl titanium (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4377-4382 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of a low oxidation state Ti compound, cyclopentadienyl cycloheptatrienyl titanium, (C5H5) Ti(C7H7) (CPCHT), as a potential source for TiN and Ti in plasma enhanced chemical vapor deposition processes has been investigated. This precursor provides us with a new chemical vapor deposition route to TiN films that offer an interesting contrast to films deposited from Ti(IV) precursors. Film depositions were carried out by introducing CPCHT, with H2 carrier gas, into the downstream region of a NH3, N2, H2, or mixed H2/N2 plasma. Low resistivity (100–250 μΩ cm) nitrogen-rich TiN films with little carbon or oxygen incorporation and good conformality were deposited with activated N2 or NH3 at deposition temperatures of 300–600 °C, inclusive. Mixed H2/N2 plasmas resulted in more stoichiometric TiN films with similar properties. The most striking feature of these films is the absence of columnar grain growth, in contrast to TiN films deposited using TiCl4 or Ti(NR2)4. Although the film texture was influenced by the plasma gas, the average grain size of the films deposited using activated N2 and NH3 was similar. The TiN films that we deposited were effective diffusion barriers between aluminum and silicon up to 575 °C. Depositions using activated H2 resulted in films with significantly less carbon than CPCHT, but still having a minimum of 2.7:1 C:Ti. The lower oxidation state of the precursor did not facilitate the deposition of a Ti-rich film. No depositions were observed with any of the reactant gases in the absence of plasma activation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357327
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