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  • 1
    Electronic Resource
    Electronic Resource
    EPR application to polymers. 3. EPR studies of poly(phenylacetylene) using different nitroxide spin probes (1985)
    s.l. : American Chemical Society
    Macromolecules 18 (1985), S. 2051-2056 
    Details
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ma00152a043
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  • 2
    Electronic Resource
    Electronic Resource
    Barnacle suspension-feeding in variable flow (1990)
    Springer
    Marine biology 105 (1990), S. 117-127 
    Details
    ISSN: 1432-1793
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract Suspension-feeding behavior of the adult barnacleSemibalanus balanoides (L.), collected at Woods Hole, USA, in 1987 and 1988, was studied in variable conditions of unidirectional and oscillating water flow. Barnacles growing on rocks were placed in a laboratory flume and exposed to precise patterns of water flow created with a specially designed electronic-circuit controlling a motor-driven propeller submersed in the flume. Laser darkfield and brightfield illumination were used to video-record the movement of suspended particles and dye in the flume and barnacle activity. When water was accelerated unidirectionally past feeding barnacles, they consistently changed feeding behavior from actively sweeping their thoracic appendages (cirri) through the water in slow-flow to passively holding cirri into the current in faster flow. The mean water velocity at which this behavioral switch occurred was 3.10 cm s−1. In slow-flow, each active sweep of the cirri created a feeding vortex that caused suspended particles to swirl into the capture zone of the following sweep. Barnacles in simulated wave-action conditions (oscillatory flow) fed passively, and orientated extended cirri to flow direction. Cirri were rapidly reoriented with the same frequency at which flow direction reversed. Slow-motion analysis of one barnacle feeding in oscillating flow (0.65 Hz) indicated that reversal of the orientation of the cirri began 0.19 s before the water itself started to reverse direction. In additional experiments, barnacles were exposed to a repetitive pattern of accelerating-decelerating flow. During each flow cycle, barnacles switched from active to passive feeding as water accelerated. Repeated exposure of an individual to the same flow-cycle caused a consistent decrease in the water-velocity threshold at which the behavioral switch occurred.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01344277
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  • 3
    Electronic Resource
    Electronic Resource
    Electrical transport through 60 base pairs of poly(dG)-poly(dC) DNA molecules (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 1134-1136 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report electrical transport through 60 base pairs of poly(dG)-poly(dC) DNA molecules. The DNA solution is dropped on two metal electrodes with the gap of 20 nm. The current–voltage characteristics measured between the electrodes exhibits clear staircases, which are reproducible over repeated measurements. The size of the observed staircases is consistent with the energy gap obtained from a tight binding calculation. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1498862
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  • 4
    Electronic Resource
    Electronic Resource
    Nonmesomorphic Solute-Mesomorphic Solvent Interaction Studies. 1. Visual and ESR Studies on Nitroxide Radicals in the Nematic and Isotropic Phases of 4-Cyano-4'-n-pentylbiphenyl (5CB) Liquid Crystalline Solvent (1994)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 98 (1994), S. 9056-9062 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100087a038
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  • 5
    Electronic Resource
    Electronic Resource
    Electron paramagnetic resonance studies of thermally produced radicals in phenylacetylene (1982)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 86 (1982), S. 4017-4019 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100217a026
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  • 6
    Electronic Resource
    Electronic Resource
    On the existence of infinitely many resonances in the scattering problem based on moment conditions and entire functions (1987)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 28 (1987), S. 1287-1289 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: It has been well proved that there are infinitely many resonances in the scattering problem provided the potential V(t) satisfies the moment conditions ∫∞0||V(t)||tn dt =O(n(1−ε)n), ε〉0, n=0,1, ... . In particular, if V(t) has a compact support then the result of Rollnik [H. Rollnik, Z. Phys. 145, 654 (1956)] and Regge [T. Regge, Nuovo Cimento, 8, 671 (1958)] is obtained and if ||V(t)||∼exp(−τt1+ε), τ,ε〉0, we have the results of Sartori [L. Sartori, J. Math. Phys. 4, 1408 (1963)].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.527531
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  • 7
    Electronic Resource
    Electronic Resource
    Determination of surface state density for GaAs and InAlAs by room temperature photoreflectance (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1765-1767 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room temperature photoreflectance (PR) was used to investigate the surface state densities of GaAs and In0.52Al0.48As surface intrinsic-n+ structures. The built-in electric field and thus the surface barrier height are evaluated using the observed Franz–Keldysh oscillations in the PR spectra. Based on the thermionic emission theory and current-transport theory, the surface state density as well as the pinning position of the Fermi level can be determined from the dependence of the surface barrier height on the pump beam intensity. Even though this method is significantly simpler, easier to perform, and time efficient compared with other approaches, the results obtained agree with the literature. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370961
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  • 8
    Electronic Resource
    Electronic Resource
    Photoreflectance studies of surface state density of InAlAs (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1771-1776 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface barrier height and surface Fermi level of InAlAs were investigated via photoreflectance spectra. Surface state density was then determined from the surface barrier height as a function of temperature, illumination power intensity, and intrinsic layer thickness. Results obtained from these three independent approaches all give the same conclusion, that the surface states are distributed over two separate regions within the energy band gap. Closely examining the photovoltage induced by various incident beam intensities revealed that the photovoltage effect is negligible when the illumination power intensity is below 1.0 μW/cm2. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1334926
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  • 9
    Electronic Resource
    Electronic Resource
    Photoreflectance study of the surface state density and distribution function of InAlAs (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 396-400 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoreflectance is used to investigate the band gap, built-in electric field, and surface Fermi level of a series of lattice-matched In0.52Al0.48As surface-intrinsic n+ structures having different undoped layer thicknesses. Experimental results indicate that, although the built-in electric field depends on the undoped layer thickness, there is a range of thickness within which the surface Fermi level is weakly pinned. From the dependence of electric field and surface Fermi level on the undoped layer thickness, we can determine that the surface states distribute over two separate regions within the energy band gap. The densities of the surface states are evaluated as well. Moreover, the dependence of the built-in electric field on undoped layer thickness is converted into the dependence of surface state density on the surface Fermi level in order to theoretically and exactly calculate the energy spectrum of the surface state density using a Guassian distribution function. The center and width of the distribution near the conduction band are obtained from the fitting parameters. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1324682
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  • 10
    Electronic Resource
    Electronic Resource
    Effects of spacer layer in modulation-doped GaAs/AlGaAs heterostructures on a localization in quantized Hall resistance (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5976-5980 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The quantum Hall effect measurements have been applied on modulation-doped GaAs/AlGaAs heterostructures with various spacer-layer thicknesses (0–100 A(ring)) for investigating the effects of an undoped layer on localization. The fraction of localized states (α) of Landau levels has been evaluated from the plateau widths in the quantized Hall resistance, and its functional dependences are proposed in terms of electron mobility and magnetic field. The mobility dependence gives an exponential profile, α∼exp(−μ/μ0), which results from a change in the long-range interaction by the variation of spacer-layer thickness. The characteristic mobility, μ0, is within (2.55±0.20)×105 cm2/V s for all step indices from i=4 to i=10, but the localized fraction has an additional dependence on step index. The fraction of localized states as a function of magnetic field shows B3/4 dependence which may be attributed to short-range contribution by interface states or interface roughness between the AlGaAs undoped layer and the GaAs buffer layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350449
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