ALBERT

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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Macromolecules 26 (1993), S. 4234-4241 
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Gene 111 (1992), S. 143-144 
    ISSN: 0378-1119
    Keywords: Recombinant DNA ; linker insertion mutagenesis ; protein engineering ; target plasmid
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Biochemical and Biophysical Research Communications 128 (1985), S. 233-240 
    ISSN: 0006-291X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2875-2877 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The CaS:Sm3+ nanocrystallites are synthesized by the modified sol-gel technique. The grain size of the nanocrystallites is approximately 60 nm, which is determined by transmission electron microscopy, x-ray diffraction and UV-vis absorption spectrum. Compared to the CaS:Sm3+ macrocrystallites, the absorption and emission of the nanocrystallites have a blueshift in their spectra, and the emission spectrum of the host CaS appears in the region of 400–500 nm. It was also found that the efficiencies of both photoluminescence and upconversion in the nanocrystallites are higher than those in the macrocrystallites. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 97 (1993), S. 6120-6123 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1365-2486
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology , Energy, Environment Protection, Nuclear Power Engineering , Geography
    Notes: To evaluate the carbon budget of a boreal deciduous forest, we measured CO2 fluxes using the eddy covariance technique above an old aspen (OA) forest in Prince Albert National Park, Saskatchewan, Canada, in 1994 and 1996 as part of the Boreal Ecosystem-Atmosphere Study (BOREAS). We found that the OA forest is a strong carbon sink sequestering 200 ± 30 and 130 ± 30 g C m–2 y–1 in 1994 and 1996, respectively. These measurements were 16–45% lower than an inventory result that the mean carbon increment was about 240 g C m–2 y–1 between 1919 and 1994, mainly due to the advanced age of the stand at the time of eddy covariance measurements. Assuming these rates to be representative of Canadian boreal deciduous forests (area ≈ 3 × 105 km2), it is likely they can sequester 40–60 Tg C y–1, which is 2–3% of the missing global carbon sink.The difference in carbon sequestration by the OA forest between 1994 and 1996 was mainly caused by the difference in leaf emergence date. The monthly mean air temperature during March–May 1994, was 4.8 °C higher than in 1996, resulting in leaf emergence being 18–24 days earlier in 1994 than 1996. The warm spring and early leaf emergence in 1994 enabled the aspen forest to exploit the long days and high solar irradiance of mid-to-late spring. In contrast, the 1996 OA growing season included only 32 days before the summer solstice. The earlier leaf emergence in 1994 resulted 16% more absorbed photosynthetically active radiation and a 90 g C m–2 y–1 increase in photosynthesis than 1996. The concomitant increase in respiration in the warmer year (1994) was only 20 g C m–2 y–1. These results show that an important control on carbon sequestration by boreal deciduous forests is spring temperature, via the influence of air temperature on the timing of leaf emergence.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2628-2633 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interfacial reactions of nickel thin films on BF+2-implanted (001)Si annealed at 200–900 °C for various periods of time have been studied by both cross-sectional and plan-view transmission electron microscopy as well as by sheet resistance measurement. Drastic difference in NiSi2 formation was found between samples with implanted amorphous and regrown substrates. In samples with implanted amorphous substrates, polycrystalline NiSi2 was found to be the stable phase after annealing at 400–900 °C. In contrast, although epitaxial NiSi2 was formed on implanted regrown samples at a temperature as low as 250 °C, the dominant phase was NiSi in samples annealed at 400–700 °C. The presence of B and/or F atoms in silicon was found to be essential for the formation of epitaxial NiSi2 on crystalline silicon at low temperatures. The final structure of the silicide layer was found to depend critically on the thickness of starting Ni overlayer and the annealing temperature. In addition, the amorphicity of the substrate apparently played an important role in promoting the formation of polycrystalline NiSi2 at low temperatures. From a comparison with Si+ implanted amorphous samples, the growth of laterally uniform NiSi2 and resistance to islanding at high temperature in BF+2-implanted amorphous samples are attributed to the retardation of the growth of NiSi2 grains by the presence of B and/or F atoms at the grain boundaries. Sheet resistance data were found to correlate well with the microstructures of the systems.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7322-7324 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A significant reduction in the density of end-of-range (EOR) defects was achieved in BF+2 implanted (111)Si by the formation and growth of a polycrystalline NiSi2 overlayer in samples annealed at 850–900 °C. In contrast, no apparent reduction in the density of EOR defects was found in BF+2 implanted silicon with no NiSi2 layer or with an epitaxial NiSi2 overlayer, subjected to the same heat treatment. The significant reduction in density of the EOR defects was correlated to the grain growth of thin polycrystalline NiSi2 overlayer. The availability of both polycrystalline and epitaxial NiSi2 on BF+2 implanted (111)Si made a direct comparison of the effects of different structures of the same silicide on the removal of the EOR defects possible.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 653-658 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal stability of polycrystalline NiSi2 on high-dose BF+2-, Si+-, B+-, F+-, As+-, and P+-implanted (001) Si has been studied by both cross-sectional and plan-view transmission electron microscopy as well as by sheet resistance measurements. The surface coverage and grain size of polycrystalline NiSi2 were found to be significantly influenced by the implantation species in silicon substrate. In Si+-, B+-, As+-, and P+-implanted samples, agglomeration of NiSi2 became very severe after 800 °C, 1-h annealing. The average grain sizes were larger than 0.5 μm. In contrast, almost full surface coverage was found in F+- and BF+2-implanted samples after 900 °C, 1-h annealing. The growth of laterally uniform NiSi2 and resistance to agglomeration at high temperatures in BF+2- and F+-implanted samples are attributed to the retardation of the growth of NiSi2 grains by the presence of fluorine bubbles at the grain boundaries. Sheet resistance data were found to correlate well with the morphological and microstructural observation.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1771-1776 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface barrier height and surface Fermi level of InAlAs were investigated via photoreflectance spectra. Surface state density was then determined from the surface barrier height as a function of temperature, illumination power intensity, and intrinsic layer thickness. Results obtained from these three independent approaches all give the same conclusion, that the surface states are distributed over two separate regions within the energy band gap. Closely examining the photovoltage induced by various incident beam intensities revealed that the photovoltage effect is negligible when the illumination power intensity is below 1.0 μW/cm2. © 2001 American Institute of Physics.
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