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  • 1
    Electronic Resource
    Electronic Resource
    Effects of a Combined Process of High-Pressure Carbon Dioxide and High Hydrostatic Pressure on the Quality of Carrot Juice (2002)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 67 (2002), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: : A combined treatment of high-pressure carbon dioxide (HPCD) and high hydrostatic pressure (HHP) was investigated as a non-thermal processing technique to enhance the safety and shelf life of carrot juice. Aerobes were completely inactivated by a combined treatment of 4.90 MPa-HPCD and 300 MPa-HHP. A combined treatment of 4.90 MPa-HPCD and 600 MPa-HHP effectively inactivated enzymes. The residual activities of polyphenoloxidase, lipoxygenase, and pectinmethylesterase were less than 11.3%, 8.8%, and 35.1%, respectively. Cloud and color were considerably affected by HPCD, but not by HHP. Enzyme activities and the total color difference showed a strong correlation with pH, which was dependent on the pressure of carbon dioxide.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.2002.tb08730.x
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  • 2
    Electronic Resource
    Electronic Resource
    Lipid Oxidation, Volatiles and Color Changes of Irradiated Pork Patties Affected by Antioxidants (1999)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 64 (1999), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Changes were measured in TBARS, color, and volatiles of irradiated (4.5 kGy) pork patties with antioxidants (sesamol, quercetin, rutin, BHT, and rosemary oleoresin) during 7 days storage at 4°C. Irradiation accelerated lipid oxidation of raw pork during storage. However, irradiation before cooking did not influence lipid oxidation of cooked pork during storage. Sesamol, quercetin, and BHT were effective in both irradiated raw and cooked pork during 7-days storage. Rosemary oleoresin and rutin were effective only in irradiated raw pork for 3 days. Hexanal, propanal and higher boiling components were well correlated (P 〈 0.01) with TBARS in cooked pork. Generation of volatiles was reduced by sesamol and quercetin, but the effects of antioxidants on color changes of raw pork patties were minor and inconsistent.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.1999.tb09852.x
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  • 3
    Electronic Resource
    Electronic Resource
    Study of charge trapping instabilities in a silicon-nitride/indium-phosphide metal-insulator-semiconductor structure by the constant-capacitance method (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4743-4748 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The applicability of the constant-capacitance method to the characterization of the charge trapping mechanisms in the insulator of a metal-insulator semiconductor (MIS) is demonstrated. It is simple, time saving, and particularly useful in a III-V compound semiconductor MIS where the density of fast interface states may be high. Under constant capacitance, the measured diode current is directly related to the average distance that the injected charges travel before being trapped within the insulator. This method was applied to Al/silicon-nitride/InP MIS capacitors where silicon nitride films were formed by plasma-enhanced chemical-vapor deposition (PECVD). From the measurements, it was found that charge trapping by direct tunneling is dominant near the silicon-nitride/InP interface under a low insulator field, and the injection of electrons to the bulk of the silicon nitride assisted by the electric field occurs at a higher insulator field. It is also confirmed that the trap density near the silicon-nitride/InP interface is higher than that of the silicon-nitride bulk due to the initial transient phenomena of the PECVD process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352083
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  • 4
    Electronic Resource
    Electronic Resource
    Thermal stability of sulfur-treated InP investigated by photoluminescence (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4052-4057 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of sulfur (S) treatments on InP is investigated by low-temperature photoluminescence (PL) measurements. For both n- and p-InP, the PL intensity is observed to increase about four times in magnitude if the scattering by the S overlayer is relatively small. Some PL bands are observed to disappear after S treatments and then reappear if the S-treated surface is heat treated at 220 °C in a vacuum of 10−3 Torr. By observing their dependence on the excitation power density, the doping level of the samples, and measurement temperature, these PL bands are ascribed to the optical transitions via surface states. Our results thus indicate that the S-treated InP surface may not be stable at a subsequent processing temperature of about 250 °C. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363366
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  • 5
    Electronic Resource
    Electronic Resource
    Interface properties and capacitance-voltage behavior of indium phosphide metal-insulator-semiconductor prepared by plasma-assisted oxidation (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7918-7920 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A remote plasma-enhanced oxidation method, with two different reactant gases of N2O and POCl3, is used to grow stable insulating layers on an InP substrate. The compositional profile of the oxide grown with N2O reactant was very similar to that of thermally grown oxide. The hysteresis of capacitance-voltage (C-V) characteristics in this system was relatively small and determined by the compensative effects of mobile charges in the oxide and the capture of electrons at the interface. The very unstable nature of the C-V characteristics in the metal-insulator-semiconductor (MIS) diode prepared with POCl3 reactant seems to be related to the gradual nature of the interface and/or the P-oxide deficiency at the interface. Even if a stable oxide layer of InPO4 can be grown by POCl3 plasma, the very poor nature of the transition region must be overcome to achieve a good MIS structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347482
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  • 6
    Electronic Resource
    Electronic Resource
    Characteristics of TiNx/n-Si Schottky diodes deposited by reactive magnetron sputtering (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4238-4242 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of the substrate bias voltage and the deposition temperature on the electrical characteristics and the 1/f noise of TiNx/n-Si Schottky diodes fabricated by reactive magnetron sputtering are investigated. As the substrate bias voltage varies from −40 to −100 V, the ideality factor of the diodes remain almost unchanged whereas the noise intensity as a function of the current shows a shift parallel by about one order of magnitude. At low current levels, the noise intensity is proportional to the current and is attributed to the mobility and diffusivity fluctuation. At higher current levels, the noise intensity is proportional to the square of the current and is attributed to bulk traps mainly near the interface. Analysis of the noise measurements shows that both the Hooge parameter and the bulk trap density near the interface first are increased and then decreased as the negative substrate bias voltage increases from −40 to −100 V. This is in contrast with the effects of the deposition temperature where we found that the Hooge parameter remains almost constant, while both the ideality factor and the interface states density are decreased as the deposition temperature increases from room temperature to 400 °C. The trap properties of the TiNx/n-Si Schottky diodes are correlated with the stoichiometry of the TiNx films investigated by spectroscopic ellipsometry measurements. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370336
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  • 7
    Electronic Resource
    Electronic Resource
    1/fγ noise in polycrystalline silicon thin-film transistors (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3934-3936 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline silicon thin-film transistors show a 1/fγ (with γ〈1) low frequency noise behavior. The 1/fγ noise is explained by emission and trapping processes of carriers between trapping states located within an energy range of kT around the Fermi level and the exponential tail states. We have derived a simple relationship between the frequency index γ of the noise spectrum and the energy distribution parameter of the tail states. From the experimental noise data, the theoretical model allows us to determine the tail states energy distribution and the grain boundary trap density. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369770
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  • 8
    Electronic Resource
    Electronic Resource
    Magnetic aftereffect in CoCr films (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2920-2922 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the relaxation or decay of the perpendicular remanent magnetization of CoCr films after the removal of a saturating magnetic field. The films have a perpendicular anisotropy and are similar to those being studied for application as perpendicular recording media. The time dependence of the decay of the magnetization was determined by measuring the magnitude of the magnetization continuously for time periods up to a thousand minutes using a SQUID magnetometer. This time dependence was studied over a range of temperatures for each of the samples (10–300 K). The decays are found to be quasilogarithmic over at least three decades of time and have been compared to two phenomological models. A fit to one model's decay rate indicates the temperature dependence of the decay rate is nonmonotonic, i.e., the decay rate is a maximum in an intermediate temperature region for the films we have studied.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340958
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  • 9
    Electronic Resource
    Electronic Resource
    Growth of CdTe epitaxial films on p-InSb(111) by temperature gradient vapor transport deposition (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1049-1051 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of high quality CdTe epitaxial films on p-InSb(111) by a simple method of temperature gradient vapor transport deposition was carried out to investigate the possibility of the existence of a two-dimensional electron gas with high mobility at CdTe/InSb heterointerfaces. From the x-ray diffraction analysis, the grown layer was found to be a CdTe epitaxial film. Photoluminescence measurements at 15 K showed that a CdTe film grown on InSb(111) in the temperature range between 180 and 280 °C appeared to have an optimum crystal perfection at a substrate temperature of about 245 °C. These results also indicated that the CdTe films grown above 245 °C contained a significant problem due to interdiffusion from the InSb substrates during the growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351360
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  • 10
    Electronic Resource
    Electronic Resource
    Effects of spacer layer in modulation-doped GaAs/AlGaAs heterostructures on a localization in quantized Hall resistance (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5976-5980 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The quantum Hall effect measurements have been applied on modulation-doped GaAs/AlGaAs heterostructures with various spacer-layer thicknesses (0–100 A(ring)) for investigating the effects of an undoped layer on localization. The fraction of localized states (α) of Landau levels has been evaluated from the plateau widths in the quantized Hall resistance, and its functional dependences are proposed in terms of electron mobility and magnetic field. The mobility dependence gives an exponential profile, α∼exp(−μ/μ0), which results from a change in the long-range interaction by the variation of spacer-layer thickness. The characteristic mobility, μ0, is within (2.55±0.20)×105 cm2/V s for all step indices from i=4 to i=10, but the localized fraction has an additional dependence on step index. The fraction of localized states as a function of magnetic field shows B3/4 dependence which may be attributed to short-range contribution by interface states or interface roughness between the AlGaAs undoped layer and the GaAs buffer layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350449
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