Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
78 (2001), S. 3642-3644
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have measured the intrinsic Schottky barrier height of Au/n-GaN metal–semiconductor diodes by performing current–voltage measurement on a series of diodes with varying in the range 1017–1019 cm−3 in the GaN layer. The effective barrier height (ΦB) monotonically decreases with increasing doping level. Taking account of the image-charge lowering (ΔΦ), the intrinsic barrier height ΦB0=ΦB+ΔΦ, is almost constant at (0.934±0.015) V up to ∼5×1018 cm−3, which is close to the Schottky limit of 0.94 V. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1377848
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