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  • 1
    Electronic Resource
    Electronic Resource
    A Silicon Oxide Hard Coating Deposited on Flexible Substrate by TMS - PECVD System (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 505-507 (Jan. 2006), p. 439-444 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: A hard coating silicon oxide film was deposited on flexible substrates by a PECVDsystem. Tertramethylsilane (TMS) and oxygen were employed as raw materials. Surface roughness and hardness of these films deposited under various TMS/O2 gas flow ratio, rf power and chamber pressure were investigated. At adequate fabricated conditions, the original surface roughness of PMMA (~ 3.36 nm) and PC (~ 1.38 nm) substrates was markedly flatted to 1.52 and 0.39 nm,respectively. Meanwhile, the surface hardness of coated PMMA and PC substrates was also enhanced to 6.077 GPa and 3.978 GPa, respectively. The hardness of silicon oxide film deposited by TMS-PECVD system was superior to silicon oxide films prepared from e-beam evaporation and dipping technologies
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/11/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.505-507.439.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Nondestructive measurement of separated propagation loss for multimode waveguides (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 133-135 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose a method which applies a combination of the well-known phase modulator, butt-couple and prism coupler to the nondestructive measurement of each mode's propagation loss in multimode waveguides. By tuning to the effective optical length of a channel waveguide with a phase modulator, the contrast in the transmitted intensity of Fabry–Perot resonance for each guided mode separated by a prism coupler can be measured. The associated propagation attenuation coefficient and the propagation loss for each guided mode are then determined from these experimental results. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121733
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  • 3
    Electronic Resource
    Electronic Resource
    Absolute displacement measurement by using the synthesized modulation index of a frequency-modulated interferometer (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 3085-3087 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A novel absolute displacement measurement by using a heterodyne interferometer, with a frequency-modulated laser diode has been successfully implemented. In this signal processing scheme, the synthesized modulation index of a phase-modulated interferometer is used for measuring the displacement, which is independent of the variation of the modulation frequency. The error induced from the intensity modulation in the laser diode can be eliminated. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148281
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  • 4
    Electronic Resource
    Electronic Resource
    Optical interferometric signal generator based on electrical phase-locked loop technique (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 1246-1252 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: To simulate a phase-modulated interferometer, a novel electrical signal generator has been demonstrated. There are two phase-locked loop (PLL) circuits used in our system to process the phase signal. The first PLL is adopted as a voltage-controlled phase shifter, and the second PLL is used to amplify the phase signal to get a phase shift with a dynamic range over ±16π rad. This system can be further modulated with sinusoidal, sawtooth, and triangular wave forms for interferometric signal detection. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148759
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  • 5
    Electronic Resource
    Electronic Resource
    Passivation mechanism analysis of sulfur-passivated InGaP surfaces using x-ray photoelectron spectroscopy (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4230-4233 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the passivation mechanism and the chemistry of an (NH4)2Sx treated (100) InGaP surface using x-ray photoelectron spectroscopy. The native oxide on the as-etched InGaP surface could be further removed by a suitable (NH4)2Sx-treatment process. The measured x-ray photoelectron spectra revealed that the S atoms, in addition to bonding to the elemental sulfur, also bonded with the In and Ga atoms on the (NH4)2Sx-treated InGaP surface. However, the S atoms occupied the phosphorous-related vacancies instead of bonding with the P atoms. A proposed structural model of a sulfur-passivated surface is then presented. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373057
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  • 6
    Electronic Resource
    Electronic Resource
    Analysis and modeling of Nd:Ti:LiNbO3 Fabry-Pérot channel waveguide lasers (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1191-1195 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Based on the bidirectional fast Fourier transform beam propagation method (FFT-BPM), a self-consistent Nd:Ti:LiNbO3 Fabry-Pérot waveguide laser model has been developed. By using the bidirectional FFT-BPM and the attenuation effect of pumping and resultant lasers within the waveguide cavity, the interference effect and physical behaviors of the population inversion longitudinal and transversal spatial effects were observed. The resultant laser power is saturated if the waveguide is longer than a critical length, which is a function of the pumping power. Moreover, the resultant laser power density is a nonuniform function along the longitudinal dimension within the waveguide cavity. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370869
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  • 7
    Electronic Resource
    Electronic Resource
    Microstructure evolution and failure mechanism for Cu/Au Schottky contacts to InGaP layer (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 987-991 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the microstructure evolution and failure mechanism of Cu/Au Schottky contacts to the InGaP layer using x-ray diffractometry (XRD) and transmission electron microscopy (TEM). At annealing temperatures varying from 500 to 600 °C for 1 min, the diffraction peak of the CuP2 alloy can be found from XRD measurement. This indicates that the Cu is unstable, because it diffused into the InGaP layer and formed a CuP2 alloy at annealing temperatures higher than 500 °C. Furthermore, when the rapid thermal annealing temperature reached 500 °C, seen from a typical cross-sectional structure in the TEM measurements, we also found a sublayer in the originally grown InGaP layer. This sublayer was identified as a mixed structure of InGaP and CuP2, the thickness of which increased with a rise in annealing temperature. Moreover, the failure mechanism of Cu/Au Schottky contacts to the InGaP layer could be determined from the evolution of the thickness of the sublayer at an annealing temperature of 500 °C for various times. At the annealing temperature of 500 °C, the activation energy between the Cu and InGaP semiconductor was 0.93 eV and the diffusion constant was 1.37×103 nm2/s. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1487439
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  • 8
    Electronic Resource
    Electronic Resource
    Investigation of the thermal degradation mechanism for Cu/Au Schottky contacts to the InGaP layer (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1349-1353 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal degradation mechanism of Cu/Au contacts to the InGaP layer has been investigated using current–voltage measurement, x-ray diffractometry (XRD) measurement and cross-sectional transmission electron microscopy with energy dispersive x-ray spectroscopy (EDS). The diffraction peaks of Cu, Au, and InGaP could be observed from the XRD measurement and an evident interface of Cu/InGaP also could be found from the cross-sectional microstructure. The apparent interface of Cu/InGaP was responsible for the high performance of Cu/Au Schottky contacts to the InGaP layer. The thermal stability endurance for the high performance of the Schottky contact can be maintained up to 450 °C. However, the Schottky contact performance became inferior at temperatures higher than 450 °C. At a temperature of 500 °C, the peaks of Cu and Au disappeared, the XRD measurement revealing the diffraction peaks of CuP2 and Cu3Au2 alloys. According to the cross-sectional microstructure and the EDS measurements at 500 °C, the Cu layer had been released, penetrated into the InGaP layer, and outdiffused to the Au layer to form an intermetallic layer. As a result, the thermal degradation mechanism is attributed to the release of the Cu layer and the indiffusion of Cu element to the InGaP layer. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1428789
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  • 9
    Electronic Resource
    Electronic Resource
    X-ray photoelectron spectroscopy study of (NH4)2Sx-treated Mg-doped GaN layers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 687-689 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present here the passivation mechanism and the chemistry of an (NH4)2Sx-treated Mg-doped GaN surface examined by using x-ray photoelectron spectroscopy. The native oxide on the GaN surface can be removed by the (NH4)2Sx treatment process. The S atoms not only bond as elemental sulfur and disulfides, but occupy nitrogen-related vacancies. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.127086
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  • 10
    Electronic Resource
    Electronic Resource
    Schottky barrier height and surface state density of Ni/Au contacts to (NH4)2Sx-treated n-type GaN (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2573-2575 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By using capacitance–voltage and photoluminescence measurements, we have investigated the Schottky barrier height and surface state density of Ni/Au contacts to n-type GaN with, and without, (NH4)2Sx treatment. The Schottky barrier height of 1.099 eV is very close to the Schottky limit of 1.10 eV for Au/Ni/n-type GaN treated with (NH4)2Sx. This result indicates that there is no severe Fermi level pinning induced by surface states. The reduction of the surface state density for the (NH4)2Sx-treated n-type GaN is attributed to the decrease of dangling bonds and occupation of nitrogen-related vacancies due to the formation of Ga–S bonds. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1410358
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