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  • 1
    Electronic Resource
    Electronic Resource
    Oxygen loss during thermal donor formation in Czochralski silicon: New insights into oxygen diffusion mechanisms (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1427-1442 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: As-grown Czochralski silicon samples with different oxygen concentrations have been heated at temperatures in the range 350–500 °C. Oxygen loss during anneals at low temperatures (T≤400 °C) is shown to follow second-order kinetics and measurements led to values of oxygen diffusivity that were larger than normal by a factor of ∼3, assuming the capture radius for dimer formation was 5 A(ring). Variations in the rate of [Oi] loss during more extended anneals could be explained if oxygen diffusion was initially enhanced but tended to its normal value as the anneals progressed. Much greater initial enhancements were derived from similar measurements for samples which had been hydrogenated by a heat treatment in H2 gas at 1300 °C for 30 min followed by a rapid quench to room temperature, and the enhancements were consistent with values derived from measurements of the relaxation of stress-induced dichroism. At higher temperatures (T≥450 °C) the measured rates of [Oi] loss were less than the expected rate of Oi-Oi interaction and tended to vary with increasingly high powers of [Oi]. Modeling of the clustering process demonstrated that the reductions could be explained if the oxygen dimers were present in a quasiequilibrium concentration throughout the anneals. The establishment of this equilibrium appears to require that oxygen dimers diffuse much more rapidly than isolated Oi atoms. The kinetics of oxygen loss over the whole range of temperatures can then be explained if dimer clustering leads mainly to increases in concentrations of agglomorates containing large numbers (≥8) of oxygen atoms. It is therefore possible to account for thermal donor (TD) formation based on the formation of different sizes of oxygen clusters, although the possibility that self-interstitials are involved in TD formation is not excluded. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358890
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  • 2
    Electronic Resource
    Electronic Resource
    Native defects in low-temperature GaAs and the effect of hydrogenation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2411-2422 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A range of experimental techniques has been used to measure point defect concentrations in GaAs layers grown at low temperatures (250 °C) by molecular-beam epitaxy (LT-GaAs). The effects of doping on these concentrations has been investigated by studying samples containing shallow acceptors (Be) or shallow donors (Si) in concentrations of ∼1019 cm−3. Material grown under As-rich conditions and doped with Be was completely compensated and the simultaneous detection of As0Ga by near-band-edge infrared absorption and As+Ga by electron paramagnetic resonance confirmed that the Fermi level was near the midgap position and that compensation was partly related to AsGa defects. There was no evidence for the incorporation of VGa in this layer from positron annihilation measurements. For LT-GaAs grown under As-rich conditions and doped with Si, more than 80% of the donors were compensated and the detection of SiGa–VGa pairs by infrared localized vibrational mode (LVM) spectroscopy indicated that compensating VGa defects were at least partly responsible. The presence of vacancy defects was confirmed by positron annihilation measurements. Increasing the Si doping level suppressed the incorporation of AsGa. Exposure of the Be-doped layer to a radio-frequency hydrogen plasma, generated a LVM at 1997 cm−1 and it is proposed that this line is a stretch mode of a AsGa–H–VAs defect complex. For the Si-doped layer, two stretch modes at 1764 and 1773 cm−1 and a wag mode at 779 cm−1 relating to a H-defect complex were detected and we argue that the complex could be a passivated As antisite. The detection of characteristic hydrogen-native defect LVMs may provide a new method for the identification of intrinsic defects. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360163
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  • 3
    Electronic Resource
    Electronic Resource
    The conversion of isolated oxygen atoms to a fast diffusing species in Czochralski silicon at low temperatures (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1878-1887 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: New measurements of oxygen out-diffusion in Czochralski silicon confirm previous reports that it occurs over an anomalously long range at low temperatures (T〈700 °C). The surface concentration is shown to decrease with increasing anneal time at ∼430 °C while the depth to which the concentration is depleted remains almost constant. The rate of decrease of the surface concentration is correlated with the rate of loss of isolated oxygen atoms in the bulk. All these observations are explained if isolated oxygen atoms are converted slowly during the anneal to an oxygen-containing fast diffusing species (Ofds) which diffuses over long distances before being trapped. High concentrations (0.6–1.7×1017 cm−3) of substitutional carbon in the crystal increase the trapping rate of Ofds but this rate tends to decrease with increasing anneal time, tending to the value for carbon-free material. Estimates of the rate of formation of Ofds are close to the expected rate of dimerization in a dilute solution at the lowest temperatures (T〈450 °C), but tend to be below the expected rate at higher temperatures. There is no clear indication of Ofds dissociation over the whole temperature range (T≤700 °C). These observations suggest that the formation of Ofds is more complicated than one would expect if it were the O2 dimer. Alternatives such as the oxygen vacancy complex should be considered. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370983
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  • 4
    Electronic Resource
    Electronic Resource
    Hydrogen diffusion and the catalysis of enhanced oxygen diffusion in silicon at temperatures below 500 °C (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3061-3070 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The relaxation of stress-induced dichroism of the 9-μm oxygen infrared absorption band has been investigated for Czochralski silicon annealed isothermally at various temperatures in the range 225–350 °C while the material was immersed in a hydrogen plasma. The in-diffusion of hydrogen atoms enhanced the rate of oxygen diffusion so that the dichroism was lost progressively from the external surfaces of samples. Comprehensive ancillary measurements demonstrated that the oxygen diffusion jumps were catalyzed by collisions with diffusing hydrogen atoms, rather than some other fast-diffusing species. The measurements allowed the hydrogen diffusion coefficient to be estimated as 1.7 × 102 exp( − 1.2 eV/kT) cm2 s−1 for the range of temperatures investigated. Increased rates of thermal donor formation were also found due to enhanced long-range oxygen diffusion. The new data are related to previous reports of enhanced oxygen diffusion jumps found in Czochralski silicon given post-growth heat treatments in hydrogen gas. It is implied that concentrations of hydrogen atoms as low as 108 cm−3 may significantly enhance oxygen diffusivity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349338
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  • 5
    Electronic Resource
    Electronic Resource
    Passivation, structural modification, and etching of amorphous silicon in hydrogen plasmas (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7612-7618 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atomic hydrogen from plasma discharges dissolves in silicon previously amorphized by ion implantation (aSi) in the form of Si–H bonds, giving rise to infrared (IR) absorption at ∼1990 cm−1 and causing partial activation of implanted dopants. Passivation of aSi does not affect the rate at which the material subsequently undergoes solid phase epitaxy. Exposure giving rise to [H]〉6 at. % causes the appearance of an additional IR absorption band at ∼2080 cm−1 and coloration of the layer. Despite annealing, the Si–H defects, normal solid phase epitaxy does not occur during subsequent heat treatment. The structural modification by H-plasma exposure coincides with etching of the layer. The observations can be understood in terms of void formation in aSi resulting from the clustering of Si–H. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365337
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  • 6
    Electronic Resource
    Electronic Resource
    Solubility of hydrogen in silicon at 1300 °C (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1612-1614 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The incorporation of hydrogen in boron doped Czochralski silicon heated to 1300 °C in H2 gas has been studied. The anneal was terminated by a rapid quench to room temperature giving rise to an unknown hydrogen-related defect as well as H-B close pairs. All the hydrogen in the crystal can be driven into such pairs by a low temperature (200 °C) anneal, after which the values of [H-B] [D-B] are in agreement with the total deuterium concentration, measured by secondary ion mass spectrometry. The estimated solubility of 1.5×1016 cm−3 is not affected by the isotopic mass of the hydrogen nor by the presence of boron or oxygen impurities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108602
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  • 7
    Electronic Resource
    Electronic Resource
    Effect of oxygen concentration on the kinetics of thermal donor formation in silicon at temperatures between 350 and 500 °C (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1525-1526 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Early measurements of the initial rate of thermal donor formation in Czochralski silicon at 450 °C revealed a dependency on the fourth power of the oxygen concentration. This result has led to the view that the core of the defects contained four oxygen atoms. We now show that this dependency is observed only for anneals close to 450 °C. Our results indicate that oxygen dimerization controls the thermal donor formation kinetics but that the dimers become increasingly unstable above 400 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108628
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  • 8
    Electronic Resource
    Electronic Resource
    Concentration of atomic hydrogen diffused into silicon in the temperature range 900–1300 °C (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2933-2935 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron-doped Czochralski silicon samples with [B]∼1017 cm−3 have been heated at various temperatures in the range 800–1300 °C in an atmosphere of hydrogen and then quenched. The concentration of [H-B] pairs was measured by infrared localized vibrational mode spectroscopy. It was concluded that the solubility of atomic hydrogen is greater than [Hs] = 5.6 × 1018 exp( − 0.95 eV/kT)cm−3 at the temperatures investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104726
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  • 9
    Electronic Resource
    Electronic Resource
    Evidence for donor-gallium vacancy pairs in silicon doped GaAs grown by molecular beam epitaxy at low temperatures (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 3008-3010 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared absorption due to localized vibrational modes of silicon impurities in heavily doped GaAs grown by molecular beam epitaxy at low temperatures has been measured. Almost all Si atoms were found to occupy Ga sites. Second neighbor pairs SiGa-YGa were also detected in a concentration of ∼2×1018 cm−3 and it was deduced that Y was a gallium vacancy (VGa). These results provide the first direct evidence for the presence of a high concentration of gallium vacancies in GaAs grown at low temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107993
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  • 10
    Electronic Resource
    Electronic Resource
    Novel aspects of oxygen diffusion in silicon (1996)
    Springer
    Journal of materials science 7 (1996), S. 347-353 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Normal diffusion of interstitial oxygen atoms (Oi ) accounts for the rate of oxygen aggregation in silicon for T 〉 500
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00185929
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