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Solubility of hydrogen in silicon at 1300 °C (1993)

McQuaid, S. A. ; Binns, M. J. ; Newman, R. C. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 62 (1993), S. 1612-1614

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Details

ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The incorporation of hydrogen in boron doped Czochralski silicon heated to 1300 °C in H2 gas has been studied. The anneal was terminated by a rapid quench to room temperature giving rise to an unknown hydrogen-related defect as well as H-B close pairs. All the hydrogen in the crystal can be driven into such pairs by a low temperature (200 °C) anneal, after which the values of [H-B] [D-B] are in agreement with the total deuterium concentration, measured by secondary ion mass spectrometry. The estimated solubility of 1.5×1016 cm−3 is not affected by the isotopic mass of the hydrogen nor by the presence of boron or oxygen impurities.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.108602

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