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Digitale Medien

Inelastic electron tunneling experiments in Bi1−xSbx alloys (1999)

Nagao, Jiro

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 86 (1999), S. 1477-1479

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Details

ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Inelastic electron tunneling experiments have been performed in Bi0.94Sb0.06–Al oxide-Al junctions. A strong peak observed at 1.9 mV in the second derivative tunnel spectra is closely related to the estimated effective Debye temperature, besides intervalley acoustic and optical phonon structures. This structure clearly corresponds to the electron–intravalley acoustic phonon coupling. © 1999 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.370916

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