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  • 1
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 329 (Jan. 2007), p. 501-506 
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The joining strength and corresponding fracture mechanism of the brazing interfacebetween diamond grains and tool matrix is one of the primary problems in the development andapplication of brazed diamond grinding tools. In this study shearing tests were performed for thebrazed joints, meanwhile the fracture mechanism and the joining characteristics were analyzeddeeply. The results indicate that, depending on the metallurgical integration effect through the atomdiffusion between the filler alloy and the metal matrix, and on the strong chemical bond by thenew-formed Cr-C compounds between the filler alloy and diamond grains, hard and reliable joiningis realized at the grain interfaces, which significantly supports the potential advantages of the latestbrazed diamond grinding tools
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Biochemical and Biophysical Research Communications 202 (1994), S. 429-436 
    ISSN: 0006-291X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Sensors and Actuators B: Chemical 17 (1993), S. 77-83 
    ISSN: 0925-4005
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Physics Letters A 181 (1993), S. 183-185 
    ISSN: 0375-9601
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3046-3049 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed simple analytical methods to estimate the nonequilibrium thermal effects of pulsed nanosecond lasers on carbon-implanted copper substrates. This analytical method eliminates the use of detailed numerical solutions of the one-dimensional heat flow equation with nonlinear moving boundary conditions. The effect of laser variables, especially energy density and pulse duration, on the maximum melt depths, solidification velocities, and maximum surface temperatures have been determined. Comparison between the analytical and detailed computer solutions of heat flow equations have also been performed to determine the validity of these analytical solutions.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 758-765 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple model for ionization of sputtered metals by a high-density plasma is presented. Experimentally, ion flux fractions of greater than 80% can be obtained by sputtering aluminum into a region of dense plasma (ne∼1012 cm−3). Such a process has important applications in the filling of high-aspect-ratio features encountered in microelectronics fabrication. Both electron-impact and Penning ionization mechanisms are considered in this model. Under conditions of low electron density (ne(very-much-less-than)1011 cm−3), Penning ionization is found to be the dominant ionization path. This is consistent with the accepted ionization mechanism for conventional diode sputtering. When high electron densities are generated, however, electron-impact ionization plays a significant ionization role. Langmuir probe measurements of the inductively coupled plasma indicate that the electron density lies between 2×1011 and 2×1012 cm−3. The model, in combination with measured plasma density, is used to calculate ion fractions. Modeled and experimentally measured aluminum ion fractions compare favorably. The effects of chamber dimensions, argon pressure, and sputtered metal density are investigated and shown to be important in optimizing the ionization fraction. © 1995 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2281-2290 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogen-free diamond-like carbon (DLC) films have been deposited with a 100 fs (FWHM) Ti:sapphire laser beam at intensities I in the 1014–1015 W/cm2 range. The films were studied with scanning probe microscopy, variable angle spectroscopic ellipsometry, Raman spectroscopy, and electron energy loss spectroscopy. DLC films with good scratch resistance, excellent chemical inertness, and high optical transparency in the visible and near infrared range were deposited at room temperature. As the laser intensity was increased from 3×1014 to 6×1015 W/cm2, the films showed an increased surface particle density, a decreased optical transparency (85%→60%), and Tauc band gap (1.4→0.8 eV), as well as a lower sp3 content (60%→50%). The time-of-flight spectra recorded from the laser plume exhibited a double-peak distribution, with a high energy suprathermal ion peak preceding a slower thermal component. The most probable ion kinetic energy showed an I0.55 dependence, increasing from 300 to 2000 eV, when the laser intensity was varied from 3×1014 to 6×1015 W/cm2, while the kinetic energy of suprathermal ions increased from 3 to over 20 keV and showed an I0.33 dependence. These high energy ions are believed to have originated from an electrostatic acceleration field established by suprathermal electrons which were formed by resonant absorption of the intense laser beams. © 1999 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 317-319 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quasicrystalline cubic boron nitride (cBN) thin films have been deposited on clean single crystal silicon substrates by the pulsed laser deposition technique. Different chamber gases (N2 and NH3) at pressures between 10−3 and 800 mTorr were employed for the deposition processes. Typically, boron-rich films were obtained, but the boron/nitrogen ratio was reduced when nitrogen or nitrogen/ammonia gases were incorporated during the deposition process. Under a wide range of deposition conditions, the films exhibited a quasicrystalline cubic phase near the film–substrate interface (∼150 A(ring) thick). A completely amorphous phase was observed beyond this region, suggesting that the substrate plays an important role in the crystallization of cBN thin films.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3288-3290 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have deposited highly oriented VO2 thin films on R-cut sapphire substrates by the pulsed laser ablation technique. The stabilization of pure VO2 is complicated due to a large number of distinct phases in the vanadium oxide system. As many as 13 different phases ranging from oxygen stoichiometry of V4O to V2O5 can exist in this system. The deposition parameters for fabrication of phase pure, highly oriented VO2 thin films on R-cut sapphire substrates by the pulsed laser deposition technique are discussed. A KrF laser (wavelength λ=248 nm, pulse duration τ=15×10−9 s) was used to ablate a pure vanadium target in an atmosphere containing specific ratios of oxygen and argon. The partial pressure of oxygen in the chamber was critical in stabilizing the VO2 phase. X-ray diffraction and other microstructural characterization revealed that the films were single phase and strongly oriented with the (200) planes parallel to the sapphire substrate. Short transition widths of 2 K and resistivity changes of 3×104 have been observed, thus indicating the growth of highly oriented VO2 films.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 952-954 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality lithium niobate thin films were deposited onto R-cut sapphire substrates (α-Al2O3) by the pulsed laser deposition method. To stabilize single phase LiNbO3, relatively high oxygen partial pressure was required. X-ray diffraction results of these films, fabricated at an oxygen pressure of 1 Torr, showed only (012) and (024) peaks from lithium niobate. The lowering of the oxygen partial pressure or addition of argon in the ambient gas resulted in formation of intermediary phases. The substrate temperature above 650 °C did not have a significant effect on the thin-film quality. Optical measurements on the films deposited under a wide variety of chamber pressures indicated an index of refraction of 2.28, corresponding to the ideal value of bulk LiNbO3.
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