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  • porous silicon  (61)
  • Triticum aestivum
  • Springer  (109)
  • American Meteorological Society
  • 2005-2009
  • 2000-2004  (109)
  • 1925-1929
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  • Springer  (109)
  • American Meteorological Society
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  • 1
    ISSN: 1572-8781
    Keywords: porous silicon ; cis-platin ; drug delivery ; calcium phosphate ; carbo-platin
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine , Technology
    Notes: Abstract In this work, the incorporation and characterization of cis-platin (cis-diammine dichloroplatinum(II)), carbo-platin [cis-diammine(cyclobutane-1,1-dicarboxylato] platinum(II)), and Pt(en)Cl2 (ethylenediamminedichloro platinum(II)) within layers of calcium phosphate on porous Si/Si substrates are described. These materials have been characterized by scanning electron microscopy, secondary ion mass spectrometry, and X-ray energy dispersive spectroscopy. The diffusion of platinum species from the doped calcium phosphate layers has also been investigated by UV-visible absorption spectrometry and inductively-coupled plasma spectroscopy. The influence of initial platinum concentration, the impact of thermal annealing of the calcium phosphate/porous Si/Si matrix, as well as the effect of varying the ligand coordination sphere of the Pt complex on its ability to be delivered to the surroundings have also been analyzed. For the case of cis-platin, it is found that increasing the concentration of platinum complex in the electrolyte during cathodic growth of calcium phosphate results in a relatively greater concentration of Pt incorporated into the calcium phosphate layers and a larger amount of Pt which subsequently can be delivered to the surrounding medium upon exposure to solvent.
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  • 2
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    Nutrient cycling in agroecosystems 56 (2000), S. 59-68 
    ISSN: 1573-0867
    Keywords: bicarbonate-extractable potassium ; muriate of potash ; potassium ; potassium chloride ; relative effectiveness ; silicate rock powder ; Triticum aestivum ; Trifolium subterraneum
    Source: Springer Online Journal Archives 1860-2000
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Abstract Granite (silicate) rock dust, a by-product of quarry operations, is being advocated and used as a fertilizer in the wheatbelt of south-western Australia (WA). The dust is insoluble and based on its nutrient element content (1.9% K and 0.3%P and negligible N) it is not expected to be a useful fertilizer. Previous laboratory studies and glasshouse experiments in WA suggest the dust is a slow release K fertilizer. This paper extends the previous studies to consider the dust as an NP or K fertilizer in the year of application in a field experiment on a soil deficient in N, P and K. In addition, the effectiveness of the dust as a K fertilizer was compared with the effectiveness of KCl (muriate of potash), the K fertilizer used in WA at present, in glasshouse experiments using K deficient soils. In the field experiment, compared with NP fertilizer or NPK fertilizer (urea, supplying N; superphosphate, providing P, S, Ca, Cu, Zn and Mo; KCl providing K), the dust had no effect on grain yield of wheat (Triticum aestivum); in fact dust applied at 20 t ha-1, for unknown reasons, reduced yields by about 65% compared to the nil (no fertilizer, no dust) treatment. Relative to the nil treatment, applying NPK fertilizer increased yields about threefold, from 0.54 to 1.79 t ha. The glasshouse experiments showed that, relative to KCl, the dust was from about 0.02 to 14% as effective in K deficient grey sandy soils for producing dried tops of 30-day old wheat plants or 42-day old clover (Trifolium subterraneum) plants. In soils with adequate K (yellow sands, sandy loams or clays, loamy clays, clay loams and clays), neither KCl nor the dust affected yields of 30 to 42-day old wheat or clover plants grown in the glasshouse. In the glasshouse experiments, no yield depressions were measured for the dust applied up to 17 g dust per kg soil (equivalent to 17 t dust ha-1 mixed into the top 10 cm of soil in the field). It is concluded that the dust has no value as a fertilizer.
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  • 3
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    Nutrient cycling in agroecosystems 56 (2000), S. 117-123 
    ISSN: 1573-0867
    Keywords: labelled nitrogen ; Lolium perenne ; nitrogen cycling ; root biomass ; straw ; Triticum aestivum
    Source: Springer Online Journal Archives 1860-2000
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Abstract Large amounts of nitrogen (N) fertiliser (150–200 kg N/ha) are currently being applied to perennial ryegrass (Lolium perenneL.) seed crops in New Zealand. Due to increasing requirements for efficient use of N fertilisers and minimising nitrate contamination of the environment, a field experiment was established using 15N-labelled fertiliser to follow the fate of applied N. Urea-15N was applied to a perennial ryegrass seed crop in April (30 kg N/ha), August (30 kg N/ha), September (60 kg N/ha) and October (60 kg N/ha). The urea-15N was applied in solution and watered in to minimise volatilisation loss. At the time of harvest (December), 9% of the applied 15N was in the seed, 29% in the straw, 19% in the roots and 39% in the soil organic matter. Losses of 15N were minimal as the N was applied in several applications, each one at a relatively low rate, and at times when leaching was unlikely to occur. Ryegrass plants used a greater proportion of the N applied in September and October (61–65%) compared with that applied in April (44%). Consequently more N was recovered from the soil in the autumn application (57%) than from the September and October applications (28–44%). The availability of the residual fertiliser N to a subsequent wheat (Triticum aestivum L.) crop was studied in a glasshouse experiment. The residual fertiliser N was present in the soil and ryegrass roots and stubble. The wheat plants only recovered 7–9% of this residual N. Most of the N taken up by the wheat came from the soil organic N pool. Overall, applying a total of 180 kg N/ha to the ryegrass appeared to have minimal direct impact on the environment. In the short term N not used by the ryegrass plants contributed to the soil organic N pool.
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  • 4
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    Sciences of soils 5 (2000), S. 10-21 
    ISSN: 1432-9492
    Keywords: Soil temperature ; Triticum aestivum ; Stubble retention ; Nitrogen ; Early growth
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geosciences , Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Abstract Early growth and development are often lower when wheat is sown into standing stubble. A study was conducted to determine whether this difference in early growth could be explained by the effects of stubble on soil temperature in the vicinity of the young plant. The roles of nitrogen nutrition and soil strength were also assessed. Three crops were monitored (1990–1992), with the wheat being sown into either standing wheat stubble after a no-till fallow (NT), or into no-tilled plots from which the stubble had been removed by burning (NB). Measurements were made of wheat growth and development, soil and plant N, soil temperature and penetration resistance. The site was on a black earth near Warialda in the northern wheatbelt of New South Wales, Australia. In 1992 wheat was also grown under simulated stubble to isolate the shading and soil temperature effects of stubble from other factors. A significant (P〈0.05) relationship was found between average soil temperature and above ground dry matter (DM) at 65 days after sowing (DAS) but not at 107 DAS. This relationship accounted for differences in DM production at 65 DAS between NT and NB treatments in 1991 and 1992, but not in 1990. In that year the lower DM production in NT plots was associated with poorer N nutrition, and possibly disease. Laboratory incubations indicate that immobilisation of N as stubble decomposed could have contributed to this. Burning stubble produced no immediate increase in soil N availability, so that it is unlikely that N contained in stubble contributed to the difference. Soil strength differences between treatments and phytotoxic effects are unlikely to have contributed to growth differences in this soil.
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  • 5
    ISSN: 1432-2242
    Keywords: Key words Glutenin ; Triticum aestivum ; Wheat storage proteins
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract  Low-molecular-weight (LMW) glutenin subunits consist mainly of two domains, one at the N- terminus which contains repeats of short amino-acid motifs, and a non-repetitive one rich in cysteine, at the C- terminal region. In previous reports, polyacrylamide-gel electrophoresis has been used to show that large size variation exists among LMW and HMW glutenin subunits, and it has been suggested that deletions and insertions within the repetitive region are responsible for these variations in length. In this study, PCR-amplification of genomic DNA (Triticum aestivum variety Chinese Spring) was used to isolate three full-length LMW glutenin genes: LMWG-MB1, LMWG-MB2 and LMWG-MB3. The deduced amino-acid sequences show a high similarity between these ORFs, and with those of other LMW glutenin genes. Comparisons indicate that LMWG-MB1 has probably lost a 12-bp fragment through deletion and that LMWG-MB1 and LMWG-MB2 have an insertion of 81 bp within the repetitive domain. The current study has shown direct evidence that insertions and/or deletions provide a mechanistic explanation for the allelic variation, and the resultant evolution, of prolamin genes. Single-base substitutions at identical sites generate stop codons in both LMWG-MB2 and LMWG-MB3 indicating that these clones are pseudogenes.
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  • 6
    ISSN: 1432-2242
    Keywords: Key words Wheat ; High-molecular-weight glutenin ; AS-PCR ; Glu-A1 locus ; Null allele ; Triticum aestivum
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract  The present work reports new PCR markers that amplify the complete coding sequence of the specific alleles of the high molecular weight (HMW) glutenin genes. A set of AS-PCR molecular markers was designed which use primers from nucleotide sequences of the Glu-A1 and Glu-D1 genes, making use of the minor diffeences between the sequences of the x1, x2* of Glu-A1, and the x5 and y10 of Glu-D1. These primers were able to distinguish between x2* and the x1 or xNull of Glu-A1. Also x5 was distinguishable from x2, and y10 from y12. The primers amplified the complete coding regions and corresponded to the upstream and downstream flanking positions of Glu-A1 and Glu-D1. Primers designed to amplify the Glu-A1 gene amplified a single product when used with genomic DNA of common wheats and the xNull allele of this gene. This work also describes the cloning and characterisation of the nucleotide sequence of this allele. It possesses the same general structure as x2* and x1 (previously determined) and differs from these alleles in the extension of the coding sequence for a presumptive mature protein with only 384 residues. This is due to the presence of a stop codon (TAA) 1215-bp downstream from the start codon. A further stop codon (TAG), 2280-bp downstream from the starting codon is also found. The open reading frame of xNull and x1 alleles has the same size in bp. Both are larger than x2* which shows two small deletions. The reduced size of the presumptive mature protein encoded by xNull could explain the negative effect of this allele on grain quality.
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  • 7
    ISSN: 1432-2242
    Keywords: Keywords AFLPs ; Bulked segregant analysis ; Marker-assisted selection ; Microsatellites ; Powdery mildew resistance ; Triticum aestivum
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract  Molecular markers were identified in common wheat for the Pm24 locus conferring resistance to different isolates of the powdery mildew pathogen, Erysiphe graminis DM f. sp. tritici (Em. Marchal). Bulked segregant analysis was used to identify amplified fragment length polymorphism (AFLP) markers and microsatellite markers linked to the gene Pm24 in an F2 progeny from the cross Chinese Spring (susceptible)× Chiyacao (resistant). Two AFLP markers XACA/CTA-407 and XACA/CCG-420, and three microsatellite markers Xgwm106, Xgwm337 and Xgwm458, were mapped in coupling phase to the Pm24 locus. The AFLP marker locus XACA/CTA-407 co-segregated with the Pm24 gene, and XACA/CCG-420 mapped 4.5 cM from this gene. Another AFLP marker locus XAAT/CCA-346 co- segregated in repulsion phase with the Pm24 locus. Pm24 was mapped close to the centromere on the short arm of chromosome 1D, contrary to the previously reported location on chromosome 6D. Pm24 segregated independently of gene Pm22, also located on chromosome 1D. An allele of microsatellite locus Xgwm337 located 2.4±1.2 cM from Pm24 was shown to be diagnostic and therefore potentially useful for pyramiding two or more genes for powdery mildew resistance in a single genotype.
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  • 8
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    Theoretical and applied genetics 100 (2000), S. 32-38 
    ISSN: 1432-2242
    Keywords: Key words Waxy (Wx) protein ; Triticum aestivum ; Amylose content ; Starch ; Rapid Visco-Analyzer ; Swelling power ; Noodle quality
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract  Waxy (Wx) protein is a granule-bound starch synthase (GBSS) responsible for amylose production in cereal endosperm. Eight isolines of wheat (Triticum aestivum L.) having different combinations of presence and absence of three Wx proteins, Wx-A1, -B1, and -D1, were produced in order to elucidate the effect of Wx protein deficiencies on the apparent amylose content and starch-pasting properties. An improved SDS gel electrophoresis showed that ’Bai Huo’ (a parental wheat) carried a variant Wx-B1 protein from an allele, Wx-B1e. Thus, wheat lines of types 1, 2, 4, and 6 examined in this study contained a variant Wx-B1 allele and not the standard allele, Wx-B1a. The results from 3 years of experiments using 176 lines derived from two cross-combinations showed that apparent amylose content increased the least in type 8 (waxy) having no Wx proteins and, in ascending order, increased in type 5 (only the Wx-A1 protein is present) 〈type 7 (Wx-D1) 〈type 6 (Wx-B1) 〈type 3 (Wx-A1 and -D1) 〈type 4 (Wx-A1 and -B1) 〈type 2 (Wx-B1 and -D1) 〈type 1 (three Wx proteins). However, Tukey’ s studentized range test did not detect significant differences in some cases. Densitometric analysis suggested that the amylose content was related to the amount of the Wx protein in the eight types. Parameters in the Rapid Visco-Analyzer test and swelling power were correlated to amylose content. Consequently, amylose content and pasting properties of starch were determined to be influenced the most by the lack of the Wx-B1 protein, followed by a lack of Wx-D1, and leastly by the Wx-A1 deficiency, which indicated the presence of differential effects of the three null alleles for the Wx protein.
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  • 9
    ISSN: 1432-2242
    Keywords: Keywords Composite populations ; Triticum aestivum ; Blumeria (Erysiphe) graminis f. sp. tritici ; Residual resistance effects ; Quantitative resistance
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract  The evolution of adult plant resistance towards powdery mildew (caused by Blumeria graminis f. sp. tritici) was investigated in 11 wheat populations cultivated for 10 years in a French network for dynamic management (DM) of wheat genetic resources. The aims of the study were to compare the evolution of resistance in sites submitted to different powdery mildew pressure and to investigate the implication of specific resistance gene action in adult plant resistance. For this, 7 of the 11 populations were characterized for their composition of specific resistance genes (results presented in a former paper). Even though no population differed significantly from the initial PA0 pool for mean adult plant resistance, divergence appeared among the final populations. The populations with the highest adult plant resistance level originated from sites where powdery mildew pressure is known to be high (Vervins, Le Rheu), whereas populations with the lowest adult plant resistance corresponded to areas with no, or very low, powdery mildew pressure (Toulouse, Montreuil-Bellay). A residual effect of defeated specific resistance genes was hypothesized, as lines accumulating at least two specific resistance genes appeared more resistant. Additional quantitative resistance seemed to be involved in adult plant resistance. DM lines appeared then as an interesting source of variability for resistance towards powdery mildew. Moreover, as these lines had been grown in mixed populations they may be appropriate as components of a composite cultivar.
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  • 10
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    Theoretical and applied genetics 100 (2000), S. 519-527 
    ISSN: 1432-2242
    Keywords: Key words Wheat ; Triticum aestivum ; Physical mapping ; Deletion lines ; RFLP
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract  Extended physical maps of chromosomes 6A, 6B and 6D of common wheat (Triticum aestivum L. em Thell., 2n=6x=42, AABBDD) were constructed with 107 DNA clones and 45 homoeologous group-6 deletion lines. Two-hundred and ten RFLP loci were mapped, including three orthologous loci with each of 34 clones, two orthologous loci with each of 31 clones, one locus with 40 clones, two paralogous loci with one clone, and four loci, including three orthologs and one paralog, with one clone. Fifty five, 74 and 81 loci were mapped in 6A, 6B and 6D, respectively. The linear orders of the mapped orthologous loci in 6A, 6B and 6D appear to be identical and 65 loci were placed on a group-6 consensus physical map. Comparison of the consensus physical map with eight linkage maps of homoeologous group-6 chromosomes from six Triticeaespecies disclosed that the linear orders of the loci on the maps are largely, if not entirely, conserved. The relative distributions of loci on the physical and linkage maps differ markedly, however. On most of the linkage maps, the loci are either distributed relatively evenly or clustered around the centromere. In contrast, approximately 90% of the loci on the three physical maps are located either in the distal one-half or the distal two-thirds of the six chromosome arms and most of the loci are clustered in two or three segments in each chromosome.
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  • 11
    ISSN: 1432-2242
    Keywords: Key words Composite populations ; Triticum aestivum ; Blumeria (Erysiphe) graminis f. sp. tritici ; Selection ; Drift
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract  Dynamic management has been proposed as a complementary strategy to gene banks for the conservation of genetic resources. The evolution of frequencies of genes for specific resistance towards powdery mildew (caused by Blumeria graminis f. sp. tritici) in populations of a French network for dynamic management of bread wheat genetic resources was investigated after 10 years of multiplication without human selection. The objective was to determine whether specific resistance gene diversity was maintained in the populations and whether any changes could be attributed to selection due to pathogen pressure. Seven populations, originating from four of the network sites, were characterized and compared to the initial population for six specific resistance gene frequencies detected by nine Blumeria graminis f. sp. tritici isolates. Diversity decreased at the population level, but because of a strong differentiation between the populations, this diversity was maintained at the network level. The comparison of Fst parameters estimated on neutral markers (RFLP) and on resistance gene data revealed that in two of the populations specific resistance genes had been selected by pathogen pressure, whereas evolution in two other populations seemed to be the result of genetic drift. For the three last populations, conclusions were less clear, as one had probably experienced a strong bottleneck and the other two presented intermediate Fst values. A dynamic management network with sites contrasted for pathogen pressure, allowing genetic drift in some populations and selection in others, appeared, at least on the short term, to be a good tool for maintaining the diversity of genes for specific resistance to powdery mildew.
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  • 12
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    Russian journal of plant physiology 47 (2000), S. 734-739 
    ISSN: 1608-3407
    Keywords: Triticum aestivum ; bioelectric potentials ; frost resistance ; critical points
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract Winter wheat (Triticum aestivum L.) seedlings of three cultivars differing in frost resistance were used to study cooling-induced changes in the bioelectric potential. Measurements were performed with nonfreezing graphite–glycerol electrodes in the regime of monitoring. Upon a gradual change in air temperature from 20 to –15°C at the rates of 20 and 2°C/h, the bioelectric potential underwent abrupt transitions at certain moments, indicating changes in the physiological condition of plants. The time required for the achievement of these critical states, as well as the survival of plants after thawing, depended both on the temperature and the cooling rate. Apparently, these characteristics were related to the dynamics of phase transitions of water. Cultivar-specific features were manifested in the different abilities of plants to maintain free water in a supercooled state. It is supposed that the critical points are related to the cold resistance of colloid systems and to the temperature lethal for plants.
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  • 13
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    Journal of porous materials 7 (2000), S. 295-298 
    ISSN: 1573-4854
    Keywords: porous silicon ; photo-voltage ; d.c. conductivity
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract In this study n-type and p-type PV devices have been fabricated by anodising Si wafers with various resistivities in aqueous ethanoic HF solution followed by deposition of semitransparent contacts. semitransparent deposition onto the porous layers. Various methods have been used for the optimisation of problematic contact to nanoporous layers. The measurements of importance are current-voltage (I-V) characteristics, the photovoltaic (PV) decay time spectrum, and the PV response as a function of excitation energy.
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  • 14
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    Journal of porous materials 7 (2000), S. 307-310 
    ISSN: 1573-4854
    Keywords: porous silicon ; photoluminescence ; degradation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The evolution, under vacuum, of the photoluminescence (PL) intensity of porous silicon (PS) has been studied as function of anodisation conditions, laser line and post-anodisation treatments. It was shown that the degradation of the PL intensity depends on the internal structure of PS. In particular, the degradation is important for PS layers formed essentially by crystallites having small size or where amorphous phase exists. The experimental results have been interpreted using a theoretical model, which takes into account the variation with time of the local concentration of the luminescent centers.
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  • 15
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    Journal of porous materials 7 (2000), S. 319-321 
    ISSN: 1573-4854
    Keywords: porous silicon ; stress measurements ; thermal annealing
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Macroscopic stress measurements are used to monitor Porous Silicon processing. Silicon wafer of 1Ω cm resistivity, n-type and 〈1 0 0〉 orientation were used as starting material. Porous Silicon layers with a porosity of 57% and a thickness of 85 μm, fabricated by electrochemical anodisation, were differently dried, then the evolution of the wafer deflection has been followed with storage time in air. Thermal treatments both in inert and oxidant atmosphere have been performed up to 1000°C. The stress behaviour vs. temperature allows to estimate the hydrogen desorption activation energy.
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  • 16
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    Journal of porous materials 7 (2000), S. 373-376 
    ISSN: 1573-4854
    Keywords: porous silicon ; superlattices ; oxidation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Initial stage of porous silicon (PS) formation has been studied in an original way. Multilayer structures constituting of very thin layers of low porosity and thick layers of high porosity have been fabricated and characterised by optical tools and electron microscopy. The non linear behaviour resulting in a change in the dissolution velocity has been quantified by using a stack layer structure. Finally using thermal oxidation it has been shown that, due to the selective oxidation as a function of the porosity, porous silicon can be used to produce a Si/SiO2 like structure.
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  • 17
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    Journal of porous materials 7 (2000), S. 345-348 
    ISSN: 1573-4854
    Keywords: porous silicon ; interface growth ; Laplacian growth ; linear stability analysis
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract We develop a Laplacian model of interface growth which includes basic features of the anodisation of silicon in hydrofluoric acid. Our aim is to find mechanisms for the characteristic properties of porous silicon formation, such as the transition from electropolishing to pore formation and the typical pore distance. The local etching rate of the interface between the semiconductor and the electrolyte is determined by the local current density. We model the diffusive transport of charge carriers in the semiconductor and of reactants in the electrolyte including the basic features of the electrochemical reaction at the interface. A linear stability analysis of a flat and planar interface is performed in order to study the initial state of pore formation.
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  • 18
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    Journal of porous materials 7 (2000), S. 357-361 
    ISSN: 1573-4854
    Keywords: porous silicon ; X-ray diffraction ; differential scanning calorimetry
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The structural properties of (111) oriented p+ type Porous Silicon (PS) samples are investigated using various X-ray diffraction techniques and compared to (001) p+ type PS layer structure. High resolution X-ray diffractometry was used to record rocking curves and reciprocal space maps, giving indications about the crystalline quality of the PS samples as well as about the pore orientation. X-ray diffraction and reflectivity performed on thin PS layers allow to estimate the layer thickness, porosity and roughness of the PS/substrate interface.
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  • 19
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    Journal of porous materials 7 (2000), S. 107-110 
    ISSN: 1573-4854
    Keywords: porous silicon ; conductivity ; percolation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The AC conductivity of a percolation model with local energetical disorder for porous Silicon in three dimensions, σ(ω), is studied by Monte Carlo simulations. The model includes both diffusion and recombination processes and σ(ω) is obtained by a Fourier transform of the mean-square displacement of the carriers, where hopping diffusion of a single type of carrier (either an electron or an exciton) and two types of carriers (an electron and a hole) are considered. It is found that at low temperatures, the behavior of σ(ω) depends sensitively on the type of carrier considered.
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  • 20
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    Journal of porous materials 7 (2000), S. 233-237 
    ISSN: 1573-4854
    Keywords: porous silicon ; integrated optics ; wave guides
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract In this work we report a principle that allows one to write visible light emitting silicon patterns of arbitrary shape down to the sub-micrometer scale. We demonstrate that porous Si growth can electrochemically be initiated preferentially at surface defects created in an n-type Si substrate by Si++ ion bombardment. Using a focused ion beam (FIB) as a source of ions, arbitrary defect patterns can be written into a substrate. The growth of light emitting porous silicon is then selectively achieved by an electrochemical treatment which triggers Si dissolution only at these defect sites. The selectivity of the electrochemical dissolution reaction can be attributed to a facilitated Schottky barrier breakdown at the implanted surface defects which leads to the desired pore formation in confined surface areas.
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  • 21
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    Journal of porous materials 7 (2000), S. 267-270 
    ISSN: 1573-4854
    Keywords: porous silicon ; photoluminescence ; electroluminescence ; band structure ; experimental
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Electroluminescence, photoluminescence, and current-voltage measurements have been carried out on a series of samples consisting of porous silicon on top of crystalline silicon. The electroluminescence spectral distributions are markedly shifted towards long wavelengths in comparison to those seen with photoluminescence. The results are discussed and explained in terms of the energy-band structure of porous silicon. The problem of injecting electrons as well as holes into the porous silicon layer is pointed out and discussed.
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  • 22
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    Journal of porous materials 7 (2000), S. 315-318 
    ISSN: 1573-4854
    Keywords: porous silicon ; nonradiative ; radiative recombination
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract An experimental investigation of the general characteristics of nonradiative and radiative recombination of charge carriers in strongly excited porous silicon is presented. It is shown that photoconductivity, photomagnetoelectric effect, quantum yield, and intensity of visible radiation of porous silicon demonstrates strong nonlinearities against laser excitation intensity. It is suggested that the band-to-band Auger recombination is dominant similar to that in crystalline silicon, whereas the visible luminescence is determined by the bimolecular process. The nonequilibrium density of charge carriers Δn ≈ 1019 cm−3, and the bimolecular radiative recombination coefficient Brad ≤ 9 × 10−14 cm3/s have been found.
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  • 23
    ISSN: 1573-4854
    Keywords: porous silicon ; thermal annealing ; nuclear magnetic resonance spectroscopy ; infrared spectroscopy
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract 29Si nuclear magnetic resonance (NMR) spectra and infrared spectra were measured for as-prepared and annealed porous silicon (PS) samples to characterize the change of PS structure. Annealing changed the infrared spectra remarkably: after 4-h annealing, the signals due to SiH2 disappeared and the intensity of the signals due to SiH decreased. On the other hand, the 29Si NMR spectra with magic-angle spinning (MAS) were not much affected by the annealing. The linewidth of spectra without MAS, however, increased with annealing time with the peak location unchanged. Annealing caused hydrogen on the PS surface to be desorbed, especially in the case of SiH2 species, and (SiH)2 dimer structure was produced during the annealing.
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  • 24
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    Journal of porous materials 7 (2000), S. 335-338 
    ISSN: 1573-4854
    Keywords: porous silicon ; oxidation ; calorimeter ; desorption ; activation energy
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The oxidation of porous silicon has been studied using differential scanning calorimeter. The oxidation was found to consist of two parts with different activation energies. This indicates the existence of two different reaction mechanism. The results from the hydrogen desorption measurements have been used to study the different oxidation behaviour of the n- and p+-type porous silicon. The results show that the dihydride structure dominates on the surface of the n-type porous silicon, contrary to p+-type porous silicon, where the monohydride is the major structure. Explanations of these features are discussed. Using the activation energy, the surface termination effects are investigated. The best improvement in the activation energy was observed in the sample, whose surface was partially stabilized by ammonium groups.
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  • 25
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    Journal of porous materials 7 (2000), S. 381-383 
    ISSN: 1573-4854
    Keywords: porous silicon ; microstructure ; infrared spectroscopy
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract We have investigated the effect of light exposure and ultrasonic (US) treatment on the formation of porous Si layers grown by electroless stain-etching technique. It was shown that; the He-Ne laser exposure resultedin a considerable increase in both the hydrogenation and the oxidation amounts in n-type Si, but a decrease in p-type wafers. The effect is attributable to effective change in the concentration of free hole carriers. The UV light exposure has led to the shift at the peak positions, indicating probably a change in bonding configuration, and increase in oxidation. Also, a correlation was established between the ultrasonic treatment and the microstructure. The US treated samples exhibit a decrease in hydrogenation and oxidation. UV exposure together with the US has led to a further decrease in both hydrogen and oxygen amounts, which was rather indicative of an excessive surface etching.
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  • 26
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    Journal of porous materials 7 (2000), S. 385-388 
    ISSN: 1573-4854
    Keywords: hydrogen desorption ; photoluminescence decay ; porous silicon
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The decay under illumination of the photoluminescence (PL) intensity ofn-type porous silicon (PS) samples prepared by electrochemical etching has been investigated. We have found that the PL evolution with illumination time presents two different stages: an initial very fast decay which lasts ∼300 s, followedby a second one, much slower, which extends for times longer than 104 s. Thisevolution suggests that two different mechanisms could be responsible for the PLintensity decay. Samples subjected to different illumination times were studied byThermal Desorption Spectroscopy (TDS). The desorption rate of H2 and SiHx species was monitored during linear heating of the samples. A qualitative correlationbetween the decay of the PL intensity under illumination and the amount of H2 and SiHx species evolved from the illuminated samples has been observed. Experimentaldata suggest that H2 could be desorbed from the sample during the illuminationtime through a photoinduced H2 desorption process, inducing the decrease of the PLintensity.
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  • 27
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    Journal of porous materials 7 (2000), S. 323-326 
    ISSN: 1573-4854
    Keywords: positron annihilation ; porous silicon
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Positron lifetime spectroscopy has been used to investigate a porous silicon film subjected to heat treatments up to 1170°C. Annealings between 300 and 500°C resulted in a 17% mass increase of the film due to oxygen uptake following the effusion of hydrogen. The positron data also indicate that vacancy clusters are formed in the silicon oxide layer or the silicon oxide—silicon interface surrounding the nanocrystallites as oxygen replaces the effusing hydrogen. The vacancy cluster concentration, which may have a bearing on the photoluminescent properties, increased by a factor of three with heating to 500°C and then decreased to one-third the original value at higher temperatures. Above 900°C vacancy migration and clustering occurred, accompanied by visible deterioration of the film.
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  • 28
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    Journal of porous materials 7 (2000), S. 339-343 
    ISSN: 1573-4854
    Keywords: porous silicon ; infrared spectroscopy ; oxidation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The Si–Si vibrational states near the surface region of porous silicon has been characterized using Fourier Transform Infrared Spectroscopy (FTIR) due to its enlarged surface area. By means of anodic etch and oxidization experiments, two Si–Si vibration modes of porous silicon have been identified as near the surface regions and in the bulk, respectively. The intensity of absorption peak at 620 cm−1, which originates from the Si–Si bonds vibrations on the surface and near surface regions of porous silicon, is found to vary depending on the length of etch and degree of oxidation of porous silicon, which exists before etching and is recovered again after fully oxidation. The peak of 610 cm−1 doesn't change throughout the oxidation experiment, and to be assigned for Si–Si bond vibrations in the bulk. With an extra irradiation of Nd:Yag laser on the PS sample the Raman and FTIR spectra reveal a red shift. These results can give an interpretation to explain the different phenomenon of Si–Si vibrations of Raman and FTIR spectroscopy.
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  • 29
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    Journal of porous materials 7 (2000), S. 367-371 
    ISSN: 1573-4854
    Keywords: porous silicon ; luminescence ; light assisted chemical etching
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract A new approach to the problem of preparation of laterally structured luminescent porous silicon is proposed. The effect is based on the photosensitivity of chemical etching of silicon. Contrary to the other technique recently reported where the porous layer was modified with light assisted chemical dissolution, a one stage anodisation-free process is used. Any desired lateral structure can be produced, depending on the illumination pattern, which is defined by optical imaging. A 2D micro-array was prepared as an example of this fast mask-free technology with an accuracy of 5 μm. Samples have a broadband visible photoluminescence centred at 680 nm when illuminated with UV or blue light. The results are analysed to determine the possible achievable accuracy of the technique and to improve our understanding of the mechanism of light assisted etching.
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  • 30
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    Journal of porous materials 7 (2000), S. 397-400 
    ISSN: 1573-4854
    Keywords: porous silicon ; Raman spectroscopy ; immersion plating ; silver
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Raman scattering from porous silicon layer into which silver is immersion-plated was studied. Ag-deposited samples show extra Raman bands. Heat treatment of the Ag-deposited samples results in a great decrease in such Raman bands. Also dipping in hydrofluoric acid solution causes a spectral change. Some comments on the assignment of the Raman peaks of the Ag-deposited porous silicon are given, and the structure of porous silicon on which metal is immersion-plated is discussed.
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  • 31
    ISSN: 1573-4854
    Keywords: porous silicon ; photoluminescence ; synchrotron radiation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Using synchrotron as a tunable excitation source, we have carried out a study on the photoluminescence systematics from a series of porous silicon samples prepared under different conditions, Luminescence spectra were recorded with excitation photon energies tuned to the Si L3,2 absorption edge (∼100 eV). The luminescence yield was in turn used to monitor the Si L3,2-edge absorption characteristics of porous silicon. A trend of luminescence wavelength and intensity as a function of preparation conditions emerges. Other related observations are also noted.
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  • 32
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    Journal of porous materials 7 (2000), S. 191-195 
    ISSN: 1573-4854
    Keywords: cell growth ; porous silicon ; cytotoxicity
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The paper reports the results of the study of cell culture growth at the surface of porous silicon. They show that porous and poly(nano)crystalline Si offer significant advantages over bulk Si surfaces for cell adherence and viability: these materials do not require coating with substances such as polylysine to support cell growth; porous Si is light-addressable because of photoluminescence and photovoltaic effects noted [Unal and Bayliss, J. Appl. Phys. 80, 3532 (1996)], allowing the potential for optical data transfer and less susceptibility to interference from external electronic equipment; finally nanostructured coatings can be applied to most object shapes, giving flexibility in their application.
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  • 33
    ISSN: 1573-4854
    Keywords: porous silicon ; superlattices ; photoluminescence
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Porous silicon photoluminescence and electroluminescence can be controlled by periodically modulating the material porosity to form high quality multilayer stacks and microcavities. Important issues not yet fully addressed are (a) the precise role played by this microstructuring, given that the luminescence is distributed throughout the entire structure and that the low porosity layers are highly absorbing at short wavelengths, and (b) whether the quality of such microcavities could be sufficient to support lasing. Using both experimental and theoretical techniques, the emission and reflection properties of different porous silicon single and multilayer structures have been investigated in order to understand further and exploit the nature of light propagation within them.
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  • 34
    ISSN: 1573-4854
    Keywords: porous silicon ; patterning ; photolythography dielectric filters ; reactive ion etching (RIE) ; microoptics
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Porous silicon (PS) layer systems have a broad range of possible applications. An advantage is the good control of the refractive index and the etch rate of the layers by the applied current density and the time respectively. For micro-optical devices you need patterned PS. For some optical devices it is not sufficient to have only one filter but it is necessary to form filters with different properties on a small area. We applied a method (M. Frank, U.B. Schallenberg, N. Kaiser, and W. Buß, in Conference on Miniaturized Systems with Microoptics and Micromechanics, edited by M.E. Moamedi, L.J. Hornbeck, and K.S.J. Pister (SPIE, San Jose, 1997), SPIE Proceedings Series 3008, p. 265) to PS which fits this goal by the following steps: fabrication of the desired reflectors below each other and partial removal of upper reflectors with reactive ion etching (RIE). The technological aspects of patterning PS after the fabrication are an important topic of this work. Problems are discussed in detail and solutions are given.
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  • 35
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    Journal of porous materials 7 (2000), S. 115-118 
    ISSN: 1573-4854
    Keywords: porous silicon ; synchrotron radiation ; coulomb blocade
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract In this paper we demonstrate that photo-electron emission excited by X-UV synchrotron radiation can be used as a “contactless” probe of the gross conduction processes in porous silicon. Moreover we demonstrate that this approach reveals the underlying conduction geometry. We show that conduction in porous silicon is to some degree controlled by percolation phenomena and finally present data which support the notion that the fundamental blocking process may be Coulomb Blockade [P.A. Lee, Physica B 189, 1–5 (1993); D. Ali and H. Ahmed, Appl. Phys. Lett. 64, 2119–2120 (1994)].
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  • 36
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    Journal of porous materials 7 (2000), S. 263-266 
    ISSN: 1573-4854
    Keywords: porous silicon ; time-resolved photoluminescence ; decays
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Porous silicon has been studied with time-resolved photoluminescence, and growth as well as decay curves have been measured at several detection energies, with sample temperatures between 10 and 300 K. In the decay curves, three components are mainly observed, a small one which is very fast, with time scales of the order of nanoseconds or faster, the main component having time scales of the order of milliseconds, and a very small, very slow component, with time scales of the order of seconds. The main components can in most—but not all—cases be fitted well with stretched exponentials containing two fitting parameters. Of these, it comes out that the parameter accounting for disorder or the like depends only little upon detection energy and temperature, whereas the parameter accouting for the development in time decreases substantially for increasing temperature. The results are discussed.
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  • 37
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    Journal of porous materials 7 (2000), S. 279-282 
    ISSN: 1573-4854
    Keywords: porous silicon ; optical absorption ; theoretical modelling
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The optical properties of porous silicon (p-Si) are calculated from the electronic band structure obtained by means of an sp3s* tight-binding Hamiltonian and a supercell model, in which the pores are columns detched in crystalline silicon (c-Si). The disorder in the pore sizes and the undulation of the silicon wires are considered by the existence of arandom perturbative potential, which produces non-vertical interband transitions, otherwise forbidden. A typical interval around each k-vector (optical window), where non-vertical transitions make an important contribution, depends on the value of the disorder and its order of magnitude is given by l−1, where l is the localization length. The calculated absorption spectra are compared with experiments, showing good agreement.
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  • 38
    ISSN: 1573-4854
    Keywords: nanocrystalline silicon ; porous silicon ; cathodoluminescence
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Luminescence emission of LPCVD polycrystalline silicon films has been studied by cathodoluminescence (CL) in the scanning electron microscope. As-deposited films show visible luminescence with dominant blue band. The relative intensity of blue emission is enhanced by implantation and by slight anodization treatments. Our investigations are consistent with previous PL results and indicate that the origin of blue emission is related to quantum confinement effects. On the other hand, the effect of annealing in these samples is a reduction of the CL signal that could be related to the increase of the nanocrystals size.
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  • 39
    ISSN: 1573-4854
    Keywords: porous silicon ; photoacoustic spectroscopy ; energy band
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Porous silicon has been studied with photoluminescence, photoluminescence excitation, and photoacoustic spectroscopy. From the luminescence data, an energy-level diagram related to the luminescence is constructed. The diagram is confirmed in detail by the photoacoustic spectra. The results are discussed with the conclusion that they are in good agreement with the surface-band oxyhydride-like emitter, which recently has been established as the source for the photoluminescence from porous silicon.
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  • 40
    ISSN: 1573-4854
    Keywords: porous silicon ; Raman spectroscopy ; morphology
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Raman-light scattering in porous silicon samples with oriented quantum wires was studied. It was shown, that the experimental data depends on the type of organization of wire system. The explanation of observed effect is discussed.
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  • 41
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    Journal of porous materials 7 (2000), S. 287-290 
    ISSN: 1573-4854
    Keywords: porous silicon ; sensors ; gas absorption
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract In this paper we report the sensitivity of porous silicon photoluminescence (PL) to diluted mixtures of methane and carbon monoxide in synthetic air. We also investigate the separate effect of synthetic air, purified nitrogen and relative humidity on both photoluminescence and conductance (G). Porous silicon samples have been prepared from n-type silicon substrates. We find that PL intensity and G decrease in synthetic air with respect to their values in N2. Presence of carbon monoxide reduces the PL intensity while methane provokes the opposite behaviour. The dependence of the PL spectra on methane and carbon monoxide concentrations has been investigated. The observed effects can be related to gas induced modifications in porous surface and suggest that porous silicon can be employed in gas sensor technology.
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  • 42
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    Journal of porous materials 7 (2000), S. 299-301 
    ISSN: 1573-4854
    Keywords: porous silicon ; Schottky emission ; photoluminescence
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Electrical transport in Gold/porous silicon/crystalline silicon junctions has been studied. The junctions are found to improve when the porous silicon is exposed to a hydrogen plasma before depositing the top metal. The hydrogen passivated junctions exhibited higher current levels and emitted light at lower voltages as compared to the unhydrogenated ones. Internal photoemission measurements were carried out to investigate the gold/porous silicon barrier. The barrier height determined from the Fowler plot is independent of the top material. The temperature dependence of the barrier height is similar to that of the crystalline silicon energy gap.
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  • 43
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    Journal of porous materials 7 (2000), S. 11-16 
    ISSN: 1573-4854
    Keywords: porous silicon ; kinetics electrochemistry ; etching ; surface analysis
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The electrochemistry of porous silicon formation has been investigated by different electrochemical as well as surface analytical methods. The kinetics of pore nucleation was observed as small steps in fast current and potential pulse transients. Oxidic intermediates were identified by ex-situ XPS. Cyclic voltammetry in solutions of different HF concentration was correlated with the etching rate of silicon dioxide. On the basis of these experimental data, an electrochemical model for the porous silicon formation is presented.
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  • 44
    ISSN: 1573-4854
    Keywords: porous silicon ; four-wave mixing ; microwave harmonics generation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract We apply optical contactless techniques, namely the four-wave-mixing and microwave harmonics generation for the characterization of nanocrystalline free-standing films and platelets of microcrystalline porous silicon. We observe (i) full carrier localization and significant lifetime shortening in free-standing films, which is thought to be a manifestation of their low-dimensional confinement, (ii) increased carrier lifetime in microcrystalline porous silicon, presumably originating from passivated surface states at the surface of pores.
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  • 45
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    Journal of porous materials 7 (2000), S. 407-410 
    ISSN: 1573-4854
    Keywords: porous silicon ; stain etching ; morphology ; HREM ; reflectance spectrometry
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Porous silicon films, nearly 100 nm thick, were produced by stain etching of n+-type silicon substrates. The films were studied by a non-destructive technique: dielectric function profiles were deduced by spectral reflectance via a finite difference model, and porosity was computed by the Effective Medium Approximation. The obtained information, combined with High Resolution Electron Microscopy observations,provided a deeper insight on the relations among technological process, morphology and reflective properties. Our preliminary results outline the possibility to control the porosity profile as well the reflectance of the porous films via the oxidising species concentration in the stain etching solution.
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  • 46
    ISSN: 1573-4854
    Keywords: stain etching ; porous silicon ; neutron reflection
    Source: Springer Online Journal Archives 1860-2000
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    Notes: Abstract We have monitored the stain-etching of silicon in real time using neutron reflection. The etching process does not occur uniformly with time and possible dynamics of the process is under consideration. Distinct irregularities are produced on the PS surface and some gas bubbling from the cell is observed.
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  • 47
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    Journal of porous materials 7 (2000), S. 77-80 
    ISSN: 1573-4854
    Keywords: porous silicon ; ZnSe ; electrochemical deposition
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Electroplating of II-VI semiconductors like ZnSe into porous silicon can be an efficient and low cost method to fill the porous volume with a transparent and conductive material. With n-type porous layers, ZnSe impregnation is more effective near the sample surface because of reaction rate limitations due to diffusion in the electrolyte. In this paper, it is shown that the deposition of ZnSe into p-type porous silicon can be localized in the lower part of the porous layer if the reduction reaction rate is monitored by limiting the charge carrier supply. This can be done by controlling the power of the laser beam which photo-generates the carriers at the bottom of the pores. Studying the porous layer chemical composition by Auger electron spectroscopy confirms that the deposit is localized at the pore bottom, whereas the changes in the chemical composition of the porous silicon surface are analyzed by infra-red spectroscopy.
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  • 48
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    Journal of porous materials 7 (2000), S. 97-101 
    ISSN: 1573-4854
    Keywords: AC impedance ; porous silicon ; residual moisture ; aging effects
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The present work aims to study the AC impedance of porous silicon films left in the contact with the anodizing bath after their growth is over. It is shown that the layers grown at p-type silicon experience noticeable changes of their impedance behavior resulting in the gradual growth of electrical resistance of the p-PS layer. This change is assumed to be related with the deposition of a passive layer at the pore bottoms associated with reabsorption of dissolved Si-containing material from the electrolyte. The layers formed at n-Si also show changes of the electrical impedance, although they are much more complicated than in the previous case (dependence of the kinetics of changes on the polarization current and polarization time, presence of the inductive loops at the impedance spectra, etc.
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  • 49
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    Journal of porous materials 7 (2000), S. 169-172 
    ISSN: 1573-4854
    Keywords: EXAFS ; XEOL ; porous silicon
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Results of an EXAFS investigation on porous Silicon carried out by X-ray Excited Optical Luminescence (XEOL) and Total Electron Yield (TEY) techniques, at the Si K absorption edge, are reported. For the first time XEOL spectra of porous silicon have been recorded in a wide energy range (1800–2500 eV) and EXAFS signals have been singled out from them. Simultaneous TEY and XEOL measurements yield to different results: in particular TEY-EXAFS is sensitive up to the third coordination shell of Si, while XEOL-EXAFS reveals only the contributions of the first two coordination shells; moreover they show a different dependence on changes of the etching parameters. This evidences the sensitivity of XEOL technique to the local structure of the quantum confined luminescent sites. The dependence of the light emission properties on the main preparation parameters and their influence on the short-range structure of red and yellow porous silicon samples are also investigated.
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  • 50
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    Journal of porous materials 7 (2000), S. 187-190 
    ISSN: 1573-4854
    Keywords: porous silicon ; temperature programmed desorption ; FTIR ; silane
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The gaseous species desorbed from porous silicon (PS) were investigated using the method of temperature programmed desorption (TPD) and fourier transform infrared spectroscopy (FTIR). Silicon wafers (25–50 Ω cm, p−, FZ) were anodised in 40% HF and HF/C2H5OH electrolytes. The PS samples were linearly heated at 1.5 K s−1 using a custom built heating unit in a oil-free pump backed vacuum chamber at a base pressure of 〈10−8 torr. A quadrupole mass spectrometer, which was used as the detector, was fitted in line of sight of the sample at a distance of about 6 mm. It was observed that silane was liberated during the heating of porous silicon samples produced from both electrolytes. The peak temperature at which this occurred was at 570 ± 10 K. This temperature coincides with the temperature of silicon-silicon bond breakage in ≡Si–SiH3 groups on the pore walls, as shown by the FTIR results. It is proposed that silane formation involves the reaction of the Si-silyl group with moisture: ≡Si–SiH3 + H2O → ≡Si–OH + SiH4.
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  • 51
    ISSN: 1573-4854
    Keywords: porous silicon ; oxidation ; liquid crystal
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract In this paper we demonstrate the filling of porous silicon (PS) layers with liquid crystals (LC's) in order to control the reflectance electrically. The preparation of PS and the choice of the right group of LC's will be presented. Especially an oxidation of PS is necessary so that the methods and parameters of oxidation will also be discussed. As a first result the increasing and decreasing of the thickness oscillations in the reflectance as a function of the applied voltage can be observed.
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    Journal of porous materials 7 (2000), S. 227-231 
    ISSN: 1573-4854
    Keywords: porous silicon ; micromachining ; localised anodisation ; fibre positioning
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Low-loss optical fibre connections require deep grooves etched in silicon substrate for accurate fibre positioning. As shown in this paper these grooves can be obtained by using localised formation of porous silicon on patterned substrates. Cr-Au masking layer with a duration in HF solution longer than 30 min is used to fabricate grooves with a depth higher than 75 μm. N+-type silicon provides grooves with a pseudo-V shape which is compatible with accurate fibre alignment. By using this technology, arrays of optical fibres are positioned with an accuracy higher than 1 μm.
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  • 53
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    Journal of porous materials 7 (2000), S. 243-246 
    ISSN: 1573-4854
    Keywords: porous silicon ; oxidation ; refractive index ; optical waveguide ; optical losses
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Further results on the optical properties of oxidised porous silicon as a function of porosity and oxidation conditions are presented in this paper. The refractive index varies logarithmically with the oxidation time irrespective of the porosity of the sample and the oxidation temperature. Burried waveguides have been realised from as-prepared and oxidised porous silicon. Optical losses of 18 dB cm−1 at λ = 1.3 μm have been obtained after oxidation at 800°C for 35 min.
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  • 54
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    Journal of porous materials 7 (2000), S. 119-123 
    ISSN: 1573-4854
    Keywords: porous silicon ; light-emitting diode ; series resistance ; external quantum efficiency
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract In this paper, two novel structures of porous silicon (PS) light-emitting diodes (LEDs) are proposed aiming at the reduction of series resistance, Rs. The basic idea of the novel structures is to suppress the excessive growth of nanoporous silicon (nano-PS) layer that is electroluminescence- (EL-) active but highly resistive. The initial wafer of the first structure consists of a lightly-doped layer stacked on a highly-doped substrate. As a consequence of anodization, nano-PS layer is formed only in the lightly-doped layer, while meso-PS layer with moderate resistivity is formed in the highly-doped substrate. The second structure consists of alternately stacked nano- and meso-PS layers, since it is expected that multiple thin nano-PS layers connected in series are less resistive than a single thick nano-PS layer. Preliminary experimental results proved the effectiveness of these novel structures on the reduction of Rs.
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  • 55
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    Journal of porous materials 7 (2000), S. 271-273 
    ISSN: 1573-4854
    Keywords: porous silicon ; photoconductivity ; energy band gap
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Photocurrent measurements have been carried out on a series of samples consisting of porous silicon on top of crystalline silicon, in the temperature range 10–300 K. From the experimental data set, the electrical band-gap energy of porous silicon is deduced to be (1.80 ± 0.01) eV, independent of sample temperature. The results are discussed with the conclusion that for the samples studied here, the electrical bandgap in porous silicon is of molecular nature and cannot be related to quantum-confinement properties of nanocrystals of elemental silicon.
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  • 56
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    Journal of applied spectroscopy 67 (2000), S. 852-856 
    ISSN: 1573-8647
    Keywords: porous silicon ; photoluminescence spectrum ; photoexcitation spectrum
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract It is found that the films of n +-type porous silicon of low (10–50%) porosity exhibit photoluminescence in the region 400–500 nm after a 5-month storage in an air atmosphere. The spectrum of blue photoluminescence of the least porous but strongly oxidized films has maxima at 417, 435, and 465 nm. The same spectrum structure manifests itself upon the introduction of an Er3+- and Yb3+-containing complex. The mechanisms of blue photoluminesence are discussed.
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  • 57
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    Plant and soil 226 (2000), S. 11-19 
    ISSN: 1573-5036
    Keywords: Chlorpropham (CIPC) ; microtubules ; nuclei ; recovery ; roots ; Triticum aestivum
    Source: Springer Online Journal Archives 1860-2000
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Abstract The present ultrastructural investigation on the effects of 50 μM chlorpropham (previously called CIPC) on growing roots of wheat (Triticum aestivum (L.) Thell cv. Vergina) was undertaken to clarify the mechanism of a carbamate herbicide action in plant cells, since the wide range of responses of plant cells to carbamate herbicides is based mainly on immunofluorescence studies. Cells of control roots contained abundant microtubules both in interphase and mitotic arrays. In chlorpropham-treated roots, however, no microtubules could be detected at all, neither in dividing nor in differentiating cells. Cycling cells became binucleate, polyploid or contained incomplete cell walls, the result of inhibition of cytokinesis. In long-term drug treatments (24 h or more) the affected cells entered a new cycle, which, however, did not progress beyond mid-metaphase. The nuclei of binucleate cells initiated prophase synchronously. Small vacuoles and Golgi vesicles were trapped within the nucleoplasm of the multilobed nuclei. In roots recovering from 8 h chlorpropham treatment, cells continued to exhibit polyploid nuclei, intranuclear vacuoles and incomplete walls. Microtubules reappeared but they were sparse and lacked a definite orientation. Preprophase cells did not form normal preprophase bands of microtubules, while mitotic cells occasionally contained microtubules bound to chromosomes and converged to minipoles. It is concluded that chlorpropham disorganized directly microtubules in addition to irreversibly affecting microtubule organizing centres, which failed to further support microtubule arrays.
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    Plant and soil 226 (2000), S. 275-285 
    ISSN: 1573-5036
    Keywords: arbuscular mycorrhiza ; Daucus carota ; Glomus mosseae ; Glomus intraradices ; monoxenic culture ; N uptake ; Triticum aestivum
    Source: Springer Online Journal Archives 1860-2000
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Abstract New information on N uptake and transport of inorganic and organic N in arbuscular mycorrhizal fungi is reviewed here. Hyphae of the arbuscular mycorrhizal fungus Glomus mosseae (Nicol. and Gerd.) Gerd. and Trappe (BEG 107) were shown to transport N supplied as 15N-Gly to wheat plants after a 48 h labelling period in semi-hydroponic (Perlite), non-sterile, compartmentalised pot cultures. Of the 15N supplied to hyphae in pot cultures over 48 h, 0.2 and 6% was transported to plants supplied with insufficient N or sufficient N, respectively. The increased 15N uptake at the higher N supply was related to the higher hyphal length density at the higher N supply. These findings were supported by results from in vitro and monoxenic studies. Excised hyphae from four Glomus isolates (BEG 84, 107, 108 and 110) acquired N from both inorganic (15NH4 15NO3, 15NO3 − or 15NH4 +) and organic (15N-Gly and 15N-Glu, except in BEG 84 where amino acid uptake was not tested) sources in vitro during short-term experiments. Confirming these studies under sterile conditions where no bacterial mineralisation of organic N occurred, monoxenic cultures of Glomus intraradices Schenk and Smith were shown to transport N from organic sources (15N-Gly and 15N-Glu) to Ri T-DNA transformed, AM-colonised carrot roots in a long-term experiment. The higher N uptake (also from organic N) by isolates from nutrient poor sites (BEG 108 and 110) compared to that from a conventional agricultural field implied that ecotypic differences occur. Although the arbuscular mycorrhizal isolates used contributed to the acquisition of N from both inorganic and organic sources by the host plants/roots used, this was not enough to increase the N nutritional status of the mycorrhizal compared to non-mycorrhizal hosts.
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  • 59
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    Plant cell, tissue and organ culture 63 (2000), S. 35-40 
    ISSN: 1573-5044
    Keywords: anther culture ; EDTA ; ferrous ions ; ferric ions ; Hordeum vulgare ; Triticum aestivum
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract A suitable form of iron supplement in the induction medium was found to be important for further development of induced pollen embryos in barley and wheat cultivars (genotypes), especially those providing few green plants viain vitro androgenesis. Genotypes able to regenerate many green plants were less susceptible to the lack of iron in induction medium. Although Fe-EDTA was found to be a suitable form of iron in the induction medium, androgenesis was also induced on media containing non-chelated iron (Fe2+ and Fe3+ ions). EDTA alone without iron inhibited the androgenic response even in the wheat cv. Florida, a model cultivar for androgenesis in wheat. In all barley cultivars under study including cv. Igri, a model cultivar for androgenesis in barley, EDTA alone caused an almost total suppression of androgenesis.
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  • 60
    ISSN: 1573-5060
    Keywords: Cheyenne ; polymorphism ; RAPD ; recombinant inbred chromosome line(RICL) RFLP ; STS ; SSR ; Triticum aestivum ; Wichita
    Source: Springer Online Journal Archives 1860-2000
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Abstract Previously chromosome 3A of wheat (Triticum aestivum L.) was reported to carry genes influencing yield, yield components, plant height, and anthesis date. The objective of current study was to survey various molecular marker systems for their ability to detect polymorphism between wheat cultivars Cheyenne(CNN) and Wichita (WI), particularly for chromosome3A. Seventy-seven `sequence tagged site' (STS), 10simple sequence repeat (SSR), 40 randomly amplified polymorphic DNA (RAPD) markers, and 52 restriction fragment length polymorphism (RFLP) probes for wheat homoeologous group 3 chromosomes, were investigated. Three (3.9%) STS-PCR primer sets amplified polymorphic fragments for the two cultivars, of which one was polymorphic for chromosome 3A. Sixty percent of SSR markers detected polymorphism between CNN and WI of which 50% were polymorphic for chromosome 3A. Twenty percent of RAPD markers detected polymorphism between CNN and WI in general, but none of these detected polymorphism for chromosome 3A. Of the fifty-two RFLP probes, 78.8% detected polymorphism between CNN and WI for group 3 chromosomes with one or more of seven restriction enzymes and 42% of the polymorphic fragements were for chromosome 3A. These high levels of RFLP and SSR polymorphisms between two related wheat cultivars could be used to map and tag genes influencing important agronomic traits. It may also be important to reconsider RFLP as the most suitable marker system at least for anchor maps of closely related wheat cultivars.
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  • 61
    ISSN: 1573-5060
    Keywords: complementary genes ; hybrid necrosis ; spring wheat ; Triticum aestivum ; winter wheat ; winter × springwheat hybridization
    Source: Springer Online Journal Archives 1860-2000
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Abstract The distribution and allelic expressivity of hybrid necrosis genes (Ne 1 and Ne 2) were studied in 21 winter (mostly exotic) and 43 spring type elite wheat genotypes, by crossing them with two known testers, C 306 (Ne 1-carrier) and HD 2380 (Ne 2-carrier).Ne 1 gene was present in one north-west Himalayan winter wheat landrace, Shoure Local, but absent in the other winter as well as spring wheats. Ne 2 gene was prevalent to a much lower extent in the exotic winter wheat germplasm (31.57%) as compared to the recently developed Indian and Mexican spring wheat semidwarfs (69.80%). This may suggest that breeders have tried to preclude hybrid necrosis by selecting for non-carrier genotypes in the development of exotic winter wheats in contrast to the situation in spring wheats. Based on the degree of expression of hybrid necrosis genes in the F1 hybrids, the carrier genotypes were characterized with respect to the allelic strength of the hybrid necrosis genes. The 27 non-carrier genotypes of the two ecotypes identified in the present study have a greater potential use in future hybridization programmes so as to overcome the problem of hybrid necrosis.
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  • 62
    ISSN: 1573-5060
    Keywords: allelic variation ; Chinese wheat ; glutenin subunit ; seed storage protein ; Triticum aestivum
    Source: Springer Online Journal Archives 1860-2000
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Abstract Variation in the electrophoretic banding patterns of high-molecular-weight (HMW) glutenin subunits of 274hexaploid wheat (Triticum aestivum) varieties from China was examined by sodium dodecyl sulfate polyacrylamide gel electrophoresis and 27 different major HMW glutenin subunits were identified. Each variety contained three to five subunits and 29different glutenin subunit patterns were observed in274 Chinese hexaploid wheats. Seventeen alleles were identified based on the comparison of subunits mobility with that previously identified in a set of standard hexaploid wheats. The Chinese hexaploid wheats exhibited allelic variation in HMW glutenin subunit composition and the variation differed from that of Japanese and hexaploid wheats of other countries.
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  • 63
    ISSN: 1573-5060
    Keywords: bunt infection ; bunt resistance ; frost resistance ; Tilletia caries ; T. foetida ; Triticum aestivum
    Source: Springer Online Journal Archives 1860-2000
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Abstract In order to determine the effects of bunt inoculation on frost resistance and winter hardiness in lines containing resistance genes, the bunt [Tilletia foetida (Wallroth) Liro, T. caries (DC.) Tulasne] susceptibility of wheat lines containing bunt resistance genesBt1 to Bt10 and the effect of the year on the degree of infection were studied over six years from 1991 to 1997 in an artificial inoculation nursery. Uninoculated and artificially inoculated wheat plants were tested for frost resistance in the phytotron in 1995 and in the field in boxes in three years from 1994/95 to 1996/97. The line withBt10 was very resistant, lines with Bt5, Bt6, Bt8 and Bt9 were resistant, the line with Bt4 was moderately resistant, those with Bt2 and Bt3 were moderately susceptible, the line with Bt1 was susceptible and the line with Bt7 was very susceptible to the local bunt population in Hungary. Bunt incidence also varied over years. The frost resistance of the Bt lines was generally lower after bunt inoculation than that of uninoculated plants. The increased frost kill in inoculated plants was not correlated with the extent of varietal susceptibility to bunt. Some lines with resistance, namely those with Bt5 (1.6% infection), Bt8 (0.6%) and Bt10 (0.0%), suffered significantly greater frost kill in the young plant stage as the result of bunt inoculation. By contrast, the Bt7line had excellent frost resistance and winter hardiness but suffered the greatest extent of bunt infection, whereas the Bt6 line had good frost resistance and good bunt resistance.
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    Plant and soil 222 (2000), S. 25-34 
    ISSN: 1573-5036
    Keywords: deficiency ; genotypic differences ; iron ; nutrient efficiency ; phytosiderophore ; tolerance ; Triticum aestivum ; Triticum durum ; zinc
    Source: Springer Online Journal Archives 1860-2000
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Abstract Tolerance to Zn deficiency in wheat germplasm may be inversely related to uptake and transport of Fe to shoots. The present study examined eight bread (Triticum aestivum) and two durum (T. turgidum L. conv. durum) wheat genotypes for their capacity to take up and transport Fe when grown under either Fe or Zn deficiency. Bread wheat genotypes Aroona, Excalibur and Stilleto showed tolerance to Zn and Fe deficiency, while durum wheat genotypes are clearly less tolerant to either deficiency. Roots of bread wheats tolerant to Zn deficiency exuded more phytosiderophores than sensitive bread and durum genotypes. Greater amounts of phytosideophores were exuded by roots grown under Fe than Zn deficiency. A relatively poor relationship existed between phytosiderophore exudation or the Fe uptake rate and relative shoot growth under Fe deficiency. At advanced stages of Zn deficiency, genotypes tolerant to Zn deficiency (Aroona and Stilleto) had a greater rate of Fe uptake than other genotypes. Zinc deficiency depressed the rate of Fe transport to shoots in all genotypes in early stages, while advanced Zn deficiency had the opposite effect. Compared with Zn-sufficient plants, 17-day-old Zn-deficient plants of genotypes tolerant to Zn deficiency had a lower rate of Fe transport to shoots, while genotypes sensitive to Zn deficiency (Durati, Yallaroi) had the Fe transport rate increased by Zn deficiency. A proportion of total amount of Fe taken up that was transported to shoots increased with duration of either Fe or Zn deficiency. It is concluded that greater tolerance to Zn deficiency among wheat genotypes is associated with the increased exudation of phytosiderophores, an increased Fe uptake rate and decreased transport of Fe to shoots.
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    Euphytica 112 (2000), S. 23-31 
    ISSN: 1573-5060
    Keywords: A granules ; B granules ; quantitative analysis ; starch quality ; triploid endosperm ; Triticum aestivum
    Source: Springer Online Journal Archives 1860-2000
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Abstract Two lines of hexaploid wheat were crossed and the basic generations of parent, F1, F2 and back-cross were sown in a controlled-environment chamber. FreshF1 and back-cross grains were generated, so the material could be handled either as the standard set of basic generations on a whole-plant basis, or as an extended set on an embryo or endosperm basis. The experiment was repeated. Mature grains were harvested and the starch particle size distribution was analysed in 3284 grains from 111 plants. Means and variances were partitioned into additive, dominance and interaction components. Grains from cross-pollinations had B-granule contents between parental values, rather than of the maternal parent, indicating an involvement of the grain genotype. Quantitative models based on endosperm genotype gave a better fit to the data than those based on embryo genotype. The difference in starch B-granule content between the parents was largely due to additive genes. Dominant genes were also indicated, with the first dose in the triploid endosperm having a large effect while the second dose had little or none. Non-allelic interactions were significant in the second experiment where the use of more types of backcross made them more detectable. There were also small and significant residual effects of the maternal plant in the first experiment, attributed to the vigour of the F1 mother plant and to the cytoplasm of Sunco. Narrow-sense heritability was low, between 0.05and 0.18 depending on the generation. Transgressive segregation was not found, suggesting that all alleles tending to increase the B-granule content were found in the Sunco parent and none in ME71. There was also no detectable heterosis in this character. The results show that breeding and selection for a low B-granule content should be possible but a further reduction will require new and complementary genes.
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  • 66
    ISSN: 1573-5060
    Keywords: disease resistance ; doubled haploid ; Fusarium headblight ; genetic analysis ; Fusarium graminearum ; recombinant inbred ; Triticum aestivum ; wheat scab
    Source: Springer Online Journal Archives 1860-2000
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Abstract The genetic constitution of resistance to Fusarium head blight (FHB, scab) caused by Fusarium graminearum in the Chinese wheat cultivar Sumai 3 and the Japanese cultivar Saikai 165 was investigated using doubled haploid lines (DHLs) and recombinant inbred lines (RILs). Frequency distributions of DHLs derived from two F1 crosses, Sumai 3 (very resistant to resistant; VR-R) / Gamenya (very susceptible; VS) and Sumai 3 / Emblem (VS), fitted well to 1: 2: 1 (resistant: moderately resistant: susceptible) ratios for reaction to FHB in the field. It is suggested that the resistance of Sumai 3 is controlled by two major genes with additive effects. One of the resistance genes may be linked in repulsion to the dominant suppressor B1 for awnedness with recombination values 15.1 ± 3.3% in Sumai 3 /Gamenya and 21.4 ± 4.3% in Sumai 3 / Emblem. Saikai 165 is a Japanese resistant line derived from an F1 Sumai 3 / Asakaze-komugi (moderately resistant; MR). The data for RILs derived from the cross Emblem / Saikai 165, indicates that three resistance genes control the resistance of Saikai 165.
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    Euphytica 113 (2000), S. 219-225 
    ISSN: 1573-5060
    Keywords: deficiency ; genotypic variation ; iron ; nutrient efficiency ; phytosiderophore ; Triticum aestivum ; Triticum durum ; zinc
    Source: Springer Online Journal Archives 1860-2000
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Abstract Tolerance to Fe deficiency of wheat genotypes exhibiting differential tolerance to Zn deficiency is not known, even though the relationship between Fe nutrition and differential tolerance of wheat genotypes to Zn deficiency has been hypothesised frequently. In the present experiment, eight Triticum aestivum and two T. turigidum L. conv. durum cultivars were grown in nutrient solution deficient in either Znor Fe. Three indices of tolerance to nutrient deficiency were compared: relative [(-nutrient/+nutrient) × 100] shoot growth, shoot dry weight under nutrient deficiency and relative shoot/root dry weight ratio. Genotypes Aroona, Excalibur, Stilleto and Trident were classified as tolerant to both Zn and Fe deficiency, while durum wheats Durati and Yallaroi were sensitive to Zn deficiency and moderate to sensitive to Fe deficiency. Genotypes Excalibur, Stilleto and Trident come from the same breeding programme and have the common parent (line MEC3 =Sonora64//TZPP/YAQUI54) that could have been the donor of the genes for tolerance to Zn deficiency. When Fe-deficient, all wheat genotypes were severely chlorotic but kept producing shoot and root dry matter at a relatively high rate, making the relationship between the relative shoot growth and the relative leaf chlorophyll content poor. This is the first report of wheat genotypes exhibiting multiple tolerance to Zn and Fe deficiencies.
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  • 68
    ISSN: 1573-5060
    Keywords: bread wheat ; breeding and environmental effects ; gene frequency ; geographical distribution ; hybrid necrosis ; Triticum aestivum
    Source: Springer Online Journal Archives 1860-2000
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Abstract Using the Information and Analytical System of Wheat Genetic Resources GRIS 3.2, the peculiarities of distribution of hybrid necrosis genes in bread wheat in different regions of the world were analyzed. Considerable variation in frequencies of the Ne1 and Ne2 genes in regions with different moisture and heat supply was revealed. A significant effect of breeding on frequency dynamics of different genotypes Ne1ne2, ne1Ne2 and ne1ne2 was confirmed.
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  • 69
    ISSN: 1573-5087
    Keywords: abscisic acid ; drought stress ; Triticum aestivum ; wheat germ agglutinin
    Source: Springer Online Journal Archives 1860-2000
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Abstract Expression of wheat germ agglutinin (WGA) gene inthe developing embryos of wheat (Triticumaestivum L. cv. C-306) was studied in relation toabscisic acid (ABA) accumulation under water stressconditions. Imposition of water stress resulted inelevated ABA levels in the embryos at threedevelopmental stages (18, 24 and 30 DPA). On thecontrary, the effect of drought stress on WGAaccumulation was stage dependent with significantincrease in WGA content being observed at only 24 DPA. Our results suggest that apart from ABA, otherfactors which are temporally expressed, are alsoinvolved in regulation of WGA gene expression.
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    Genetic resources and crop evolution 47 (2000), S. 281-284 
    ISSN: 1573-5109
    Keywords: agronomic traits ; isozymes ; landrace ; Triticum aestivum ; variation ; wheat
    Source: Springer Online Journal Archives 1860-2000
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Abstract A sample of an Argentinean landrace of wheat showed considerable variation in most of the evaluated morphological and agronomic characters. However, analyses with high molecular glutenins and two isozyme systems, known to be highly polymorphic among current cultivars, revealed very little or no variation, respectively. The large difference in the observed variation between morphoagronomic and biochemical characters is discussed.
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    Journal of chemical ecology 26 (2000), S. 2141-2154 
    ISSN: 1573-1561
    Keywords: Allelopathy ; phenolic acids ; 2,4-dihydroxy-7-methoxy-1,4-benzoxazin-3-one ; DIMBOA ; GC-MS-MS ; wheat ; Triticum aestivum ; weed suppression ; annual ryegrass ; Lolium rigidum
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Chemistry and Pharmacology
    Notes: Abstract Wheat allelopathy has potential for weed suppression. Allelochemicals were identified in wheat seedlings, and they were exuded from seedlings into agar growth medium. p-Hydroxybenzoic, trans-p-coumaric, cis-p-coumaric, syringic, vanillic, trans-ferulic, and cis-ferulic acids and 2,4-dihydroxy-7-methoxy-1,4-benzoxazin-3-one (DIMBOA) were identified in both the shoots and roots of 17-day-old wheat seedlings and their associated agar growth medium. Wheat accessions with previously identified allelopathic activity tended to contain higher levels of allelochemicals than poorly allelopathic ones. The allelopathic compounds present in the shoots generally also were identified in the roots and in the agar medium. Allelochemicals were distributed differentially in wheat, with roots normally containing higher levels of allelochemicals than the shoots. When the eight allelochemicals were grouped into benzoic acid and cinnamic acid derivatives, DIMBOA, total coumaric, and total ferulic acids, the amount of each group of allelochemicals was correlated between the roots and the shoots. Most of the allelochemicals identified in the shoots and roots could be exuded by the living roots of wheat seedling into the agar growth medium. However, the amounts of allelochemicals in the agar growth medium were not proportional to those in the roots. Results suggest that wheat plants may retain allelochemicals once synthesized. The presence of allelochemicals in the agar growth medium demonstrated that wheat seedlings were able to synthesize and to exude phytotoxic compounds through their root system that could inhibit the root growth of annual ryegrass.
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    Nutrient cycling in agroecosystems 56 (2000), S. 109-116 
    ISSN: 1573-0867
    Keywords: labelled nitrogen ; Lolium perenne ; nitrogen cycling ; root biomass ; straw ; Triticum aestivum
    Source: Springer Online Journal Archives 1860-2000
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Abstract A field trial was carried out to compare the transformations and plant uptake of urine N and S in a short-term pasture from within an arable/pasture ley rotation and a long-term pasture. Animal urine labelled with 15N and 35S was applied to microplots at both sites. These microplots were destructively sampled at various time intervals over 12 months and analysed for 15N and 35S. It is known that soil organic matter accumulates under short-term pastures compared with a long-term pasture in which accumulation and degradation are in balance. Consequently, it was hypothesised that immobilization of urine N and S is more intense in the short-term. However, in this study there was considerably less immobilization of 15N and 35S into soil organic forms under short-term pasture than long-term pasture. This was attributable to a greater pasture dry matter response to urine application under the short-term pasture (due to its inherently low N fertility) resulting in a greater plant uptake of 15N and 35S with less 15N and 35S consequently being available for immobilization. At both sites, all of the applied 35S was accounted for through plant uptake and recovery in the soil, but 21–48% of the 15N was unaccounted for and presumed to have been lost through gaseous emissions. It was concluded that accumulation of soil organic N and S under short-term pastures is likely to be attributable to turnover of plant residues (particularly root material) and does not appear to be related to immobilization in urine patches.
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    Plant cell, tissue and organ culture 60 (2000), S. 69-73 
    ISSN: 1573-5044
    Keywords: cereals ; tissue culture ; Triticum durum ; Triticum aestivum
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract Fertile, green plants were regenerated from immature inflorescence explants from each of four Canadian wheat cultivars. The cultivars were representative of four classes of Canadian wheat. Explants from immature inflorescences of three size ranges were cultured on two types of media: MSI/MSR, which contains 1650 mg l-1 NH4NO3and sucrose as a carbon source, and BII/BIR, which contains 250 mg l-1 NH4NO3and maltose as a carbon source. Regeneration from all cultivars was significantly better on BII/BIR media than on MSI/MSR media. On BII/BIR media, `AC Karma', `Plenty', and `Fielder' gave the highest number of shoots per 10 explants, where the explants were derived from immature inflorescences 5.1 to 10.0 mm in length. 'Columbus' did not regenerate on MSI/MSR medium, and regenerated poorly on BII/BIR medium. Differences were found between cultivars with regard to the number of regenerant plants produced with the best treatments: `Plenty' produced 16.1 shoots per 10 explants, `AC Karma' 12.4, `Fielder' 6.4, and `Columbus' 2.2.
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  • 74
    ISSN: 1573-5060
    Keywords: biochemical marker ; gene location ; Lophopyrum elongatum ; Puccinia striiformis ; stripe rust ; substitution line ; Triticum aestivum ; yellow rust
    Source: Springer Online Journal Archives 1860-2000
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Abstract A set of T. aestivum-L. elongatum chromosome substitution lines was tested for yellow rust resistance at the seedling stage. Inheritance of the resistance and esterase-5 (Est-5) variation were studied. The results demonstrated that L.elongatum carried a new gene(s) conferring yellow rust resistance. This gene was dominant and located on chromosome 3E of L. elongatum. The biochemical locus encoding Est-5was also located on chromosome 3E, and co-segregated with theYr gene(s) in the wheat background. The transmission frequencies of chromosome 3E in 3E(3A) × CS, 3E(3B) × CS and 3E(3D) × CS hybrids were scored.None of the hybrids transmitted the alien chromosome at thetheoretical maximum rate, but the transmission frequencies ofchromosome 3E in F2 populations of 3E(3A) × CS and 3E(3D) × CS were significantly higher than in thatof 3E(3B) × CS.
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  • 75
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    Euphytica 111 (2000), S. 199-203 
    ISSN: 1573-5060
    Keywords: Diuraphis noxia (Mordvilko) ; protein ; Russian wheat aphid ; Triticum aestivum ; wheat
    Source: Springer Online Journal Archives 1860-2000
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Abstract The Russian wheat aphid (RWA), Diuraphis noxia (Mordvilko), has become a perennial, serious pest of wheat (Triticum aestivum L.) in the western United States. Current methodologies used to enhance RWA resistance in wheat germplasm could benefit from an understanding of the biochemical mechanisms underlying resistance to RWA. This study was initiated to identify specific polypeptides induced by RWA feeding that may be associated with RWA resistance. The effects of RWA feeding on PI 140207 (a RWA-resistant spring wheat) and Pavon (a RWA-susceptible spring wheat) were examined by visualizing, silver-stained denatured leaf proteins separated by two-dimensional polyacrylamide gel electrophoresis. Comparisons of protein profiles of noninfested and RWA-infested Pavon and PI 140207 revealed a 24-kilodalton-protein complex selectively inhibited in Pavon that persisted in PI 140207during RWA attack. No other significant qualitative or quantitative differences were detected in RWA-induced alterations of protein profiles. These results suggest that RWA feeding selectively inhibit synthesis and accumulation of proteins necessary for normal metabolic functions in susceptible plants.
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  • 76
    ISSN: 1573-5036
    Keywords: plant uptake ; potassium ; potassium starvation ; radiocaesium ; Triticum aestivum
    Source: Springer Online Journal Archives 1860-2000
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Abstract Short term experiments were carried out to investigate the effect of internal tissue potassium concentration on the uptake of radiocaesium by spring wheat (Triticum aestivum cv. Tonic). The results showed that potassium starvation increased Cs influx rates by a factor of 10 compared with non-starved plants. Solution to plant tissue transfer factor (TF) values also increased by around an order of magnitude after potassium starvation treatment. The enhancement of Cs influx rates by potassium starvation could be offset by an increase in external potassium concentration: this effect is minimal at external potassium concentrations greater than approximately 200 μM (8 mg L-1). This reveals that Cs influx into plant roots is subject to control by both internal and external potassium status. The kinetics of Cs uptake by potassium in starved and non-starved plants can be described adequately by the Michaelis-Menten equation. It was shown that potassium starvation substantially reduces the Km value from approximately 28 to 6 μM, which suggests that starvation treatment increases significantly the affinity of plant roots for Cs+. Mechanisms involved in K-Cs interactions during plant uptake are discussed in this paper. Finally, the relevance of such mechanisms as determinants of radiocaesium uptake by plants growing under different ecological conditions is emphasised.
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  • 77
    ISSN: 1573-5060
    Keywords: genetic diversity ; germplasm ; RFLP ; Triticum aestivum ; wheat breeding
    Source: Springer Online Journal Archives 1860-2000
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Abstract A set of 292 accessions of common wheat (Triticum aestivum L.) representing 21 germplasm pools based on geographical or breeding program origins was assayed for RFLP diversity. Thirty cDNA and genomic DNA probes and the HindIII restriction enzyme were employed for RFLP analysis. About 61% of all 233 scored bands were present in 75% or more of the accessions. All but one of the 30 probes revealed polymorphism, and the average number of distinct patterns per probe over all accessions was 9.5.Polymorphic Information Content (PIC) values within a pool varied from 0 to 0.9 and depended on the identities of both the germplasm pool and the probe. Rare banding patterns with a relative frequency of ≤0.2 within a pool were detected. These rare patterns were more likely to occur in pools exhibiting high levels of heterogeneity. The highest level of polymorphism was observed in the Turkish landraces from Southwest Asia. The Eastern U.S. soft red winter wheat germplasm pool was more genetically diverse than the other advanced germplasm pools, and nearly as diverse as the Turkish landrace pool. RFLP-based genetic relationships between germplasm pools generally tracked expectations based on common geographical origin, breeding history and/or shared parentages. The Chinese wheat landraces from Sichuan, Tibet, and Yunnan provinces were distinct from other pools. Similarity matrices for among-pool genetic distance estimates based on either band frequencies or banding pattern frequencies showed good correlation with matrices derived from Nei and Li's mean genetic similarity estimates (r=−0.82** and r=−0.73**, respectively.
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  • 78
    ISSN: 1573-5079
    Keywords: canopy architecture ; canopy photosynthesis ; CO2 enrichment ; global change ; leaf area index ; leaf tip angle ; nitrogen stress ; Triticum aestivum
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract The response of whole-canopy net CO2 exchange rate (CER) and canopy architecture to CO2 enrichment and N stress during 1996 and 1997 for open-field-grown wheat ecosystem (Triticum aestivum L. cv. Yecora Rojo) are described. Every Control (C) and FACE (F) CO2 treatment (defined as ambient and ambient +200 μmol mol−1, respectively) contained a Low- and High-N treatment. Low-N treatments constituted initial soil content amended with supplemental nitrogen applied at a rate of 70 kg N ha−1 (1996) and 15 kg N ha−1 (1997), whereas High-N treatments were supplemented with 350 kg N ha−1 (1996 and 1997). Elevated CO2 enhanced season-long carbon accumulation by 8% and 16% under Low-N and High-N, respectively. N-stress reduced season-long carbon accumulation 14% under ambient CO2, but by as much as 22% under CO2 enrichment. Averaging both years, green plant area index (GPAI) peaked approximately 76 days after planting at 7.13 for FH, 6.00 for CH, 3.89 for FL, and 3.89 for CL treatments. Leaf tip angle distribution (LTA) indicated that Low-N canopies were more erectophile than those of High-N canopies: 48° for FH, 52° for CH, and 58° for both FL and CL treatments. Temporal trends in canopy greenness indicated a decrease in leaf chlorophyll content from the flag to flag-2 leaves of 25% for FH, 28% for CH, 17% for CL, and 33% for FL during 1997. These results indicate that significant modifications of canopy architecture occurs in response to both CO2 and N-stress. Optimization of canopy architecture may serve as a mechanism to diminish CO2 and N-stress effects on CER.
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  • 79
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    Chromosome research 8 (2000), S. 671-676 
    ISSN: 1573-6849
    Keywords: meiotic metaphase I pairing ; recombinant isochromosome ; Triticum aestivum ; Triticum dicoccoides
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract A recombinant isochromosome i5BLrec of wheat was developed with one arm and the proximal 36% of the other arm of Chinese Spring (CS) origin and the distal 64% of the recombined arm of Triticum turgidum subsp. dicoccoides origin. The i5BLrec} provides an unusual opportunity to analyze the role of the centromere or arm heterozygosity in chromosome prealignment and synapsis during meiosis. In monosomic condition, the i5BLrec formed a ring univalent in 86.8% of the pollen mother cells (PMCs) at meiotic metaphase I. In the disomic condition, the two i5BLrec preferentially paired as a normal bivalent in 74.8% of the PMCs, which differed significantly (p〈0.01) from the normal bivalent pairing of 51% observed in diisosomic 5BL chromosomes of the CS (Di5BLCS) control plants. In plants with one i5BLrec and a normal 5BCS, the long arm of 5BCS paired with the homologous arm of i5BLrec in 54.4% of the PMCs, and 40.4% of the PMCs had a 5BCS univalent and a i5BLrec ring univalent. The implications of the i5BLrec pairing data on the mechanism of Ph1 gene action are discussed.
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  • 80
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    Chromosome research 8 (2000), S. 501-511 
    ISSN: 1573-6849
    Keywords: BFB cycle ; chromosome healing ; gametocidal factor ; rye deficiencies ; Secale cereale ; Triticum aestivum
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract The gametocidal factor on the Aegilops cylindrical chromosome 2Cc was used to induce and analyze the nature of chromosomal rearrangements in rye chromosomes added to wheat. For this purpose we isolated plants disomic for a given rye chromosome and monosomic for 2Cc and analyzed their progenies cytologically. Rearranged rye chromosomes were identified in 7% of the progenies and consisted of rye deficiencies (4.6%), wheat–rye dicentric and rye ring chromosomes (1.8%), and terminal translocations (0.6%). The dicentric and ring chromosomes initiated breakage–fusion–bridge cycles (BFB) that ceased within a few weeks after germination as the result of chromosome healing. Of 56 rye deficiencies identified, after backcrossing and selfing, only 33 were recovered in either homozygous or heterozygous condition covering all rye chromosomes except 7R. The low recovery rate is probably caused by the presence of multiple rearrangements induced in the wheat genome that resulted in poor plant vigor and seed set, low transmission, and an underestimation of the frequency of wheat–rye dicentric chromosomes. Genomic in-situ hybridization (GISH) analysis of the 33 recovered rye deficiencies revealed that 30 resulted from a single break in one chromosome arm followed by the loss of the segment distal to the breakpoint. Only three had a wheat segment attached distal to the breakpoint. Although some of the Gc-induced rye rearrangements were derived from BFB cycles, all of the recovered rye rearrangements were simple in structure. The healing of the broken chromosome ends was achieved either by the de-novo addition of telomeric repeats leading to deficiencies and telocentric chromosomes or by the fusion with other broken ends in the form of stable monocentric terminal translocation chromosomes.
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  • 81
    ISSN: 1573-4854
    Keywords: porous silicon ; passivation ; photoluminescence intensity stability
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract We have investigated the effects of the porous Si surface passivation by oxygen or nitrogen ion processing on the photoluminescence (PL) intensity and its stability using an electron cyclotron resonance ion source. The results indicate that an anneal before exposure to ion beam causes a PL intensity enhancement upon exposure to oxygen or nitrogen ion beam. A combination of an anneal and a passivation by exposure to nitrogen ion beam enhances the PL intensity by a factor of ∼2.5 compared to the intensity of the initial as-anodized PS and the enhanced intensity is stabilized for more than 180 min under Ar+-laser illumination while oxygen-ion-exposed PS exhibits an enhancement in PL intensity only by ∼1.4 and a decay in PL intensity by ∼20% after 180 min Ar+-laser illumination. The results suggest that the reaction of nitrogen with a PS surface plays a key role for the PL intensity enhancement and stability.
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  • 82
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    Journal of porous materials 7 (2000), S. 159-163 
    ISSN: 1573-4854
    Keywords: porous silicon ; EELS ; NFEELS ; SiO2 layer
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract First results of an Electron Energy Loss Spectroscopy in the Near Field (NFEELS) mode of n+ porous silicon are described here. Sequences of EELS spectra in the low loss energy range (0–30 eV) were recorded, using a scanning transmission electron microscope, as the e-beam was scanned across a nano-hole surrounded by Si platelets. This technique is shown to be very sensitive to spectral and spatial changes in the electromagnetic field distribution outside the surface of nanoparticles, governed by their local nature and shape.
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  • 83
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    Journal of porous materials 7 (2000), S. 239-242 
    ISSN: 1573-4854
    Keywords: porous silicon ; interference fringes ; infrared-spectroscoy
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Here we present the software utility “ProSpect” which allows to process and interpret the data of infrared spectrophotometry studies of thin porous films. These spectra are often complicated by the presence of interference fringes. The program allows to remove fringes and thus enhance the intensity of useful IR bands as well as calculate optical parameters of the films (medium thickness value, refractive index, deviation of the thickness from medium value). Application of ProSpect in analysis of the FT-IR spectra of non-uniform porous silicon films is illustrated.
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  • 84
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    Journal of porous materials 7 (2000), S. 125-130 
    ISSN: 1573-4854
    Keywords: porous silicon ; photoluminescence ; electroluminescence ; scanning tunneling microscopy
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Porous silicon films as used in efficient blue-green electroluminescent devices (internal efficiency about 0.1%) were studied by scanning tunneling microscopy light emission spectroscopy (STMLES) as well as photoluminescence (PL) and electroluminescence (EL) spectroscopy. Areas of the n-type porous Si surfaces with small particles of about 5 nm dimensions gave STMLE, but areas with larger structures gave no emission. Clear STMLE spectra gave a peak at 630 nm, quite different from the EL peak at 500 nm. Whereas the PL peak at 700 nm was consistent with the STM indication of quantised entities, the EL seemed more readily explicable in terms of defects at the metal contact barrier.
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  • 85
    ISSN: 1573-4854
    Keywords: porous silicon ; erbium containing films ; electrochemical cathode treatment
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Electrochemical treatment of porous silicon (PS) in ethanol solution of Er(NO3)3 was investigated to obtain material suitable for optoelectronic application. The voltammograms of n+-type and p-type PS vs. an Ag/AgCl reference electrode were examined and compared with these of a Pt electrode. The basic cathode reactions were marked out the voltammograms: (i) the formation and the adsorption of atomic hydrogen; (ii) the formation of molecular hydrogen; (iii) the electrolysis of water and ethanol. No zones relating to on electrochemical transitions of Er ions were revealed on the voltammograms. Nevertheless, with the cathode polarization, the formation of an Er-containing deposit was observed at the surface of the cathode. The IR and SIMS analysis were used to study the composition of the deposits. The scheme of the electrochemical and chemical reactions at the cathode is discussed.
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  • 86
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    Journal of porous materials 7 (2000), S. 63-66 
    ISSN: 1573-4854
    Keywords: porous silicon ; oxidation ; IR spectroscopy ; vibrational analysis
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Oxidation behavior of porous silicon under various environments of dry and wet air, and solution with and without appropriate oxidant at mild temperatures has been investigated. The progress of oxidation was followed by infrared spectroscopy. The presence of water vapor greatly accelerates the oxidation rate in comparison with the rate in dry air. The oxidized states are clarified with the help of oxidation experiments of partially hydrogen-desorbed porous silicon, which does not contain SiH2 and SiH3 as the hydride species. An oxidation mechanism is proposed to explain that oxidation is accelerated in the presence of water vapor and at the partially hydrogen-desorbed porous silicon. Further, oxidation behavior of porous silicon in solution containing appropriate oxidant is also investigated. The rate is very rapid and the oxidation does not produce the back-bond oxidized state of OySiHx in contrast to the oxidation in air.
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  • 87
    ISSN: 1573-4854
    Keywords: porous silicon ; pore propagation ; orientation dependence ; RBS ; EPR
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract A comparative study is presented on the pore propagation directions of porous silicon layers (PSL) formed on p+-type substrates of different orientations. PSLs were formed on plain (0 0 1) and (1 1 1) silicon wafers as well as on structured (0 0 1) wafers containing facets of various orientations. During anodization, regular pores follow the 〈0 0 1〉 direction on the (0 0 1) planes. While on the (1 1 1) planes fewer regular pores develop and seemingly propagate closely to the 〈1 1 1〉 direction. These results indicate that the pores propagate perpendicular to the surface i.e. along the field lines when the surface orientation is either (0 0 1) or (1 1 1). When the silicon surface provided (1 1 0) orientation (Chuang, Collins, and Smith, 1989), or its position is in between the (0 0 1) and (1 1 1) planes then the pores do not propagate perpendicular to the surface but along the 〈0 0 1〉 direction. All the phenomena exhibited might be explained by presuming that during formation, the pores propagate along the 〈1 0 0〉 directions, and that those 〈1 0 0〉 directions are preferred which are closely to the field lines. In PSLs formed on (0 0 1) surfaces the field lines and the 〈0 0 1〉 crystallographic direction are coincident. However, in the (1 1 1) oriented wafer where three equally probable 〈1 0 0〉 directions exist around the field lines, more irregular structure of PSLs will develop.
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  • 88
    ISSN: 1573-4854
    Keywords: porous silicon ; photoluminescence ; bandgap
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract We have measured the crystallite sizes, the bandgap energies, and the photoluminescence (PL) energies in porous silicon (PSi) samples having a wide range of porosities and kept in different ambient conditions. The dependence of the bandgap energy on the crystallite size agrees with theory. For PSi samples exposed to air and containing crystallites smaller than 5 nm, the PL intensity increases by several orders of magnitude and the PL peak energy shifts from the near infrared to the red, in agreement with the quantum confinement model for the PL. For crystallites smaller than 3 nm, there is a Stokes shift between the excitonic bandgap and PL energies, which increases to several hundreds of meV for sizes ∼2 nm, indicating that, in PSi exposed to air, the PL is not due to free excitons. Before exposure to air, very high porosity PSi samples emit at shorter wavelengths than after exposure to air, suggesting that the Stokes shift depends on the surface chemistry.
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  • 89
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    Journal of porous materials 7 (2000), S. 93-96 
    ISSN: 1573-4854
    Keywords: porous silicon ; diffusion-limited model ; electronic structure ; photoluminescence
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract We present the results of theoretical calculations for electronic structures and photoluminescence (PL) spectrum of porous silicon whose morphology is generated through the diffusion limited aggregation process of pores in a two-dimensional honeycomb lattice. We have found that due to irregularity of the structure most of its eigenstates near band gap are localized while some of them are relatively delocalized. The localization of the eigenstates near band gap causes band-gap narrowing analogous to the quantum confinement effect. Solving the time-dependent equations for the occupation numbers of the eigenstates, we show that the present model reproduces the stretched exponential decay of PL intensity observed in the experiments.
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    Journal of porous materials 7 (2000), S. 103-106 
    ISSN: 1573-4854
    Keywords: porous silicon ; photoluminescence ; electroluminescence ; quenching
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Carrier transport and photoluminescence-quenching mechanisms in reverse-biased p-type porous silicon in contact with an aqueous electrolyte are investigated. Concerning transport mechanisms investigation, experiments are based on the study of the photo-induced current as a function of the porous layer thickness. The liquid-impregnated porous silicon skeleton is found under equipotential conditions. Transport of electrons (supplied by the substrate) in porous silicon is shown to be dominated by a diffusion process. Photoluminescence-quenching is investigated by using a reverse-biased p-type porous silicon illuminated at 365 and 809 nm simultaneoulsy. The first illumination generate photoluminescence and the second supplies carriers in the substrate. A progressive photoluminescence-quenching has been observed, under a constant applied voltage, by increasing progressively the electron concentration in the porous layer. This original experiment allows to reject the hypothesis of an electric-field-induced separation of carriers as the photoluminescence-quenching mechanism in wet porous silicon, while it strongly supports the mechanism based on Auger recombination.
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  • 91
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    Journal of porous materials 7 (2000), S. 17-22 
    ISSN: 1573-4854
    Keywords: porous silicon ; electropolishing ; anodic silicon dissolution ; probe beam deflection technique
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Probe beam deflection (PBD) technique was used for the in-situ characterization of p-Si anodic dissolution in fluoride containing acidic media in the regimes of porous Si formation, electropolishing and sustained electrochemical oscillations. When trends in deflectometric signal differed from those of current density, PBD could provide complementary informations on the occurrence of chemical reactions at the electrode. A model is proposed for the estimation of oxide thickness based on the instantaneous formation and dissolution rates in galvanostatic conditions. Results point to the existence of different oxide phases at the p-Si/electrolyte interface.
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  • 92
    ISSN: 1573-4854
    Keywords: porous silicon ; morphology ; mechanism of growth
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The properties of porous silicon (PS) are closely connected to its morphology, much investigation has been done in order to correlate the morphological characteristics of PS with the anodisation parameters. In this paper the results of morphological analysis of PS formed on N+type substrates of 〈1 0 0〉 and 〈1 1 1〉 orientation are presented. The dependences of the porosity, thickness of PS, density of pores and of the effective surface on the current density are obtained. Interpretation of these results in terms of diffusion layer and energy levels is given, with special attention given to the low current density case.
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  • 93
    ISSN: 1573-4854
    Keywords: porous silicon ; photoluminescence ; optical absorption
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Using a quantum confinement based-PL model, PS was modelled as a mixture of Quantum Dots (QDs) and Quantum Wires (QWs) having different concentrations and sizes. It was shown that in the optical absorption edge the PL peak energy and the Optical Absorption (OA) exhibit the same trend, depending on preparation conditions. The spectral behaviours of PL and OA are analysed and correlated throughout the shapes and the size distribution of the nanocrystallites forming PS. Using the quantum confinement formalism, the value of the effective band-gap energy determined from the lowest PL energy almost corresponds to that estimated from the optical absorption coefficient. These results suggest that the lowest radiative transition between the valence band and the conduction band corresponds to the largest luminescent wires, and that the radiative recombination process leading to the PL emission occurs in the c-Si crystallite core.
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    Journal of porous materials 7 (2000), S. 377-379 
    ISSN: 1573-4854
    Keywords: porous silicon ; photoluminescence ; pulse anodizing
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Porous Silicon is conventionally made by dc anodisation of silicon. In this paper we have studied the luminescence of porous silicon made by pulsed anodisation as a function of duty cycle and HF concentration. Specifically we show for the first time that the luminescence can be tuned over a wide range in energy.
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  • 95
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    Journal of porous materials 7 (2000), S. 363-366 
    ISSN: 1573-4854
    Keywords: porous silicon ; publications ; bibliographic analysis
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The issue of porous silicon has attracted much research during last seven years due to perspectives of the formation of all-silicon optoelectronic devices (first of all—LEDs). The work presents a bibliographic analysis of publications made during the period from 1990 (when red-light photoluminescence from porous silicon was first reported by Dr. L. Canham) to the present time in order to reveal the existing tendencies of the researches (what particular field attracts the most research, who is the most fruitful in publishing articles related to porous silicon, etc.). The contributions of different research centres and countries are also evaluated. Personal contributions of leading researchers are disclosed and their citation ranking is given. It is concluded that emerging applications of porous silicon in micro-machining, chemical and biological monitoring will stimulate further activities in studying the mechanism of porous silicon growth and its physical and chemical properties.
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  • 96
    ISSN: 1573-4854
    Keywords: porous silicon ; phenylene vinylene oligomer ; photoluminescence ; electrical conduction
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Electrical and optical properties of diode structures based on porous silicon (PS) and thin films of phenylene vinylene oligomer (PVO) have been studied. Steady-state photoluminescence spectroscopy show that the structure of the luminescence band depends on the PS morphology. We assign the observed effect to the morphology-dependent penetration of PVO material into the pores. Current-voltage characteristics of the PVO/PS diodes are studied and interpreted assuming Schottky emission and hopping transport of carriers aspossible mechanisms of d.c. electrical conduction.
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  • 97
    ISSN: 1573-9058
    Keywords: chlorophyll fluorescence ; diphenyl carbazide ; donor side ; electron transport ; MnCl2 ; NH2OH ; photosystem ; senescence ; thylakoid protein ; Triticum aestivum
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract Changes in various components of photosynthetic apparatus during the 6-d dark incubation at 25 °C of detached control and DCMU-treated Triticum aestivum L. leaves were examined. The rate of photosystem 2 (PS2) activity was decreased with increase of the time of dark incubation in control leaves. In contrast to this, DCMU-treated leaves demonstrated high stability by slowing down the inactivation processes. Diphenyl carbazide and NH2OH restored the PS2 activity more in control leaves than in DCMU-treated leaves. Mn2+ failed to restore the PS2 activity in both control and DCMU-treated samples. Similar results were obtained when Fv/Fm was evaluated by chlorophyll fluorescence measurements. The marked loss of PS2 activity in dark incubated control leaves was primarily due to the loss of D1, 33, and 23 kDa extrinsic polypeptides and 28-25 kDa LHCP2 polypeptides.
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  • 98
    Electronic Resource
    Electronic Resource
    Springer
    Photosynthetica 37 (2000), S. 519-527 
    ISSN: 1573-9058
    Keywords: alanine ; aspartate ; glycine ; glycollate ; malate ; nitrate ; serine ; sugars ; Triticum aestivum ; urea ; wheat
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract 14CO2 uptake in leaves of wheat plants (Triticum aestivum L.) fertilized by urea or Ca(NO3)2 (25 mol m-3) was investigated. The Warburg effect (inhibition of 14CO2 uptake by oxygen) under 0.03 vol. % CO2 concentration was observed only in non-fertilized plants. Under 0.03 vol. % CO2, the Warburg antieffect (stimulation of 14CO2 uptake by oxygen) was detected only in plants fertilized by Ca(NO3)2. Under saturating CO2 concentration (0.30 vol. %), the Warburg antieffect was observed in all variants. Under limitation of ribulose-1,5-bisphosphate carboxylase/oxygenase activity (0.30 vol. % CO2 + 1 vol. % O2), the rate of synthesis of glycollate metabolism products decreased in control and urea-fertilized plants but was enhanced in nitrate-fed plants. Hence, there was an activation of glycollate formation via transketolase reaction in fertilized plants, and the products of nitrate reduction function were oxidants in nitrate-fertilized plants whereas the superoxide radical played this role in urea-fertilized plants.
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  • 99
    ISSN: 1573-9058
    Keywords: net photosynthetic rate ; soil and atmospheric drought ; stomatal conductance ; Triticum aestivum
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract Yields of wheat in semiarid and arid zones are limited by drought, and water condition is very important at each stage of development. Studies carried out at Loess Plateau in the northwestern part of China indicated that yield of spring wheat (Triticum aestivum L.) cv. Dingxi 81-392 was reduced by 41% when subjected to water stress. The effects of two water regimens on net photosynthetic rate (P N), stomatal conductance (g s), and intercellular CO2 concentration (C i) were investigated at the jointing, booting, anthesis, and grain filling stages. Low soil moisture in comparison to adequate one had invariably reduced P N during the diurnal variations at the four growth stages. P N and g s in both soil moisture regimes was maximally reduced at midday. C i and the stomatal limitation fluctuated remarkably during photosynthesis midday depression processes, especially at the grain filling stage. Hence atmospheric drought at midday was one of the direct causes inducing stomata closure and the g s depression, but it was beneficial for maintaining stable intrinsic water use efficiency. Fluctuation in C i implicated that non-stomatal limitation also plays an important role during the period of photosynthesis midday depression. Consequently stomatal and/or non-stomatal limitation are the possible cause of the midday photosynthesis decline.
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  • 100
    Electronic Resource
    Electronic Resource
    Springer
    Photosynthetica 37 (2000), S. 615-619 
    ISSN: 1573-9058
    Keywords: carbon based secondary compounds (CBSC) ; isoorientin ; leaf age ; litter ; phenolics ; tricin ; Triticum aestivum
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract We compared flavonoids in green, mature, and senescing flag leaves of wheat grown under ambient (AC - 370 μmol mol-1) and elevated (EC - 550 μmol mol-1) concentrations of CO2 in a FACE (Free Air CO2 Enrichment) system. The concentrations of flag leaf flavonoids (e.g., isoorientin and tricin) decreased to one third in mature leaves, and the majoritary isoorientin almost disappeared in senescing leaves. Flavonoid concentrations increased in green well-developed flag leaves under EC (46 % isoorientin and 55 % tricin), whereas the differences disappeared in mature and senescing flag leaves. Predictions of changes in litter phenolic concentrations and their effects on decomposition rates under EC based on changes in green leaves need to be revised.
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