ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Monograph available for loan
    Monograph available for loan
    Eaux météoriques, sol et atmosphère (1913)
    Paris : Masson
    Associated volumes
    Details Availability
    Call number: Q 751 / Regal 51
    In: Deuxième expédition antarctique française (1908 - 1910)
    Type of Medium: Monograph available for loan
    Pages: 47 S.
    Location: Magazine - must be ordered
    Branch Library: GFZ Library
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    BOOK
    Link to Library Catalog
    get availability status
  • 2
    Electronic Resource
    Electronic Resource
    Mechanism of terbium(III)-enhanced lyoluminescence of x-ray irradiated sodium chloride
    Amsterdam : Elsevier
    Analytica Chimica Acta 294 (1994), S. 1-11 
    Details
    ISSN: 0003-2670
    Keywords: Chemiluminescence ; Lyoluminescence ; Sodium chloride ; Terbium
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0003-2670(94)85040-2
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    The quenching and recovery of photoluminescence in porous silicon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5984-5985 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the photoluminescence quenching of porous silicon in different atmospheres and in vacuum. We observe a much faster quenching in vacuum than reported before, which we propose is caused by the difference of structure in p- and n-type porous silicon, or a re-reaction with an electrolyte vapor. We have also investigated the recovery of the photoluminescence. We observe the luminescence intensity to partially recover under the influence of a hydrogen atmosphere, up to 0.1 of its initial value. We propose that this is associated with the stabilization of surface dangling bonds. When the hydrogen atmosphere was changed to the normal atmosphere of air, the photoluminescence intensity started to decrease again due to oxidation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363596
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Photo-oxidation studies of porous silicon using a microcalorimetric method (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5888-5893 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used an isothermal microcalorimetric method to study photoinduced effects in porous silicon (PS). In the photo-oxidation investigations using constant wavelength, sharp threshold behavior with threshold energies 3.9 eV for n-PS and 4.7 eV for p+-PS were observed. The two discussed origins for the different threshold energies are based either on the energy gap transitions and enhanced electron transfer from the conduction band to the electron-affinity level of oxygen molecules, or the Si–O bond energy. Also nonlinear dependence on the irradiation intensity was found. Surprisingly, high exothermic signals were observed in measurements made under an inert perfusion. It is proposed that this is associated with relaxation of PS structure, which seems to be more efficiently induced by illumination than thermal treatment. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371607
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Thermal carbonization of porous silicon surface by acetylene (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 456-461 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Three different thermal carbonization processes of porous silicon (PS) surface by acetylene occurring between 400 and 950 °C were observed by in situ measurements. The peak temperature of oxidation shifts from 300 to 600 °C and the activation energy from 130 to 500 kJ/mole in the samples treated at 900 °C compared to untreated PS. Using Fourier transform infrared spectroscopy (FTIR), the bonding configurations associated with the temperature dependent processes were found. In the samples treated at or below 600 °C, traces of C–Hx bonds were clearly seen, but above 600 °C the FTIR spectra started resemble those of the SiC. The graphitization process was found to take place on the surface of PS samples treated above 800 °C. By changing the time between the C2H2 flush and thermal treatment, the graphitization can be controlled and even avoided. The weight increase was observed to be nearly proportional to the reduction of the surface area while the decrease in the surface area due to the thermal carbonization was found to be small. The origin of this phenomenon and the effects of other preparation parameters have been discussed. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1421221
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    A role of illumination during etching to porous silicon oxidation (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 826-828 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The oxidation behavior of porous silicon (PS) has been found to be related to illumination during etching. The autocatalytic oxidation behavior at room temperature arises from the unrelaxed surface induced by the preparation under illumination and can be removed using thermal treatment in a nitrogen atmosphere. The effect is absent in the case of degenerate PS and smaller in p type than in n-type PS. The correlation between the oxidation behavior and the microstructural dimensions is also discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124526
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Thermal oxidation of free-standing porous silicon films (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 637-639 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the thermal oxidation of free-standing porous silicon films from room temperature to 730 °C with a differential scanning calorimeter and a thermogravimeter. We have observed three different thermal oxidation processes for the porous silicon. The change of enthalpy (ΔH) and activation energy (Ea) for the first reaction has been calculated. The oxidation of a fresh sample has been compared with those of aged samples, which were stored in dry relative humidity (RH 0%), humid (RH 100%) and normal (RH 25%–35%) laboratory air atmospheres. We also used Fourier transform infrared spectroscopy to clarify the bonds for each process. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118294
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Somatic embryogenesis in immature embryos and protoplasts of Pinus caribaea
    Amsterdam : Elsevier
    Plant Science 69 (1990), S. 215-224 
    Details
    ISSN: 0168-9452
    Keywords: Pinus caribaea ; cell suspension ; protoplast ; somatic embryogenesis ; tropical pine
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0168-9452(90)90120-D
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Callus formation from cotyledon protoplasts of Pinus oocarpa and Pinus patula (1988)
    Oxford, UK : Blackwell Publishing Ltd
    Physiologia plantarum 72 (1988), S. 0 
    Details
    ISSN: 1399-3054
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Protoplasts were isolated from cotyledons of 11-day-old seedlings of Pinus oocarpa and P. patula ssp. tecunumanii. The best enzyme combination was Cellulase R10 + Pectolyase Y-23, associated with bovine serum albumin. When cultured at a low density [1.25 × 103 to 5 × 103 protoplast (ml)−1] in a liquid medium, the cells divided. The medium contained glutamine and casein hydrolysate as nitrogen sources, and glucose as osmoticum. Rate of division was increased by supplementing the medium with l-ornithine, putrescine and spermidine. However, the rate remained low, with an absolute division frequency of ca 1%. Dilution allowed colony proliferation and fragmentation, leading to the formation of numerous microcalli that could be transferred to various solid media for further growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1399-3054.1988.tb05847.x
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Comparison of different methods in microstructural characterization of porous silicon (2000)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 33 (2000), S. 504-506 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: Results obtained using the Brunauer-Emmett-Teller method, small-angle x-ray scattering and wide angle x-ray diffraction in the study of porous silicon are compared. The BET method seems to fail when the porosity of samples is smaller than 50%, giving unrealistically large values for the specific surface area, but giving results similar to SAXS when the porosity is larger than 50%. In the comparison of the WAXD and SAXS data quite large differences between the average particle size and chord length were observed in low-porosity samples. The possible origin of the differences is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889899014466
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...