Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
63 (1988), S. 1904-1909
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report further x-ray double-crystal diffractometry experiments on the structural perfection of the semi-insulating (Ga, Fe) double-doped LEC-grown InP substrates. Series of x-ray reflection topographs were taken at different settings on the rocking curves using the double-crystal arrangement in parallel setting. Variations in lattice-plane spacings and lattice-plane orientations induced by Ga inhomogeneity were determined. (In, Ga)As layers grown by molecular-beam epitaxy on (001) oriented (Ga,Fe) double-doped InP substrates were also characterized.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.339890
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