Abstract
In this paper we demonstrate that photo-electron emission excited by X-UV synchrotron radiation can be used as a “contactless” probe of the gross conduction processes in porous silicon. Moreover we demonstrate that this approach reveals the underlying conduction geometry. We show that conduction in porous silicon is to some degree controlled by percolation phenomena and finally present data which support the notion that the fundamental blocking process may be Coulomb Blockade [P.A. Lee, Physica B 189, 1–5 (1993); D. Ali and H. Ahmed, Appl. Phys. Lett. 64, 2119–2120 (1994)].
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
F.J. Himpsel, P. Heimann, T.C. Chiang, and D.E. Eastman, Phys. Rev. Lett. 45, 1112–1117.
V. Lehmann, F. Hofmann, F. Moller, and U. Gruning, Thin Solid Films 255, 20–22 (1995).
G. Pennelli, J. Appl. Phys. 80, 5116–5120 (1996).
D. Stauffer and A. Aharony, Introduction to Percolation Theory (Taylor & Francis, 1994).
P.A. Lee, Physica B 189, 1–5 (1993).
D. Ali and H. Ahmed, Appl. Phys. Lett. 64, 2119–2120 (1994).
W. Chen and H. Ahmed, J. Vac. Sci. & Technol. B 13, 2883–2887 (1995).
S.T. Fraunhoff, M. Marso, M.G. Berger, M. Thonissen, H. Luth, and H. Munder, J. Electrochem. Soc. 142, 615–620 (1995).
Y. Kanemitsu, H. Uto, Y. Matsumoto, T. Futagi, and H. Mimura, Material Research Society Proceedings 298, 265–268 (1993).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Jacobs, J., Hamilton, B., Canham, L. et al. Probing Carrier Transport in Porous Silicon with Synchrotron Radiation. Journal of Porous Materials 7, 115–118 (2000). https://doi.org/10.1023/A:1009667627705
Issue Date:
DOI: https://doi.org/10.1023/A:1009667627705