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  • American Institute of Physics (AIP)  (5,994)
  • 2015-2019
  • 1985-1989  (5,994)
  • 1987  (5,994)
  • 1
    Electronic Resource
    Electronic Resource
    15-cm hybrid ion diode on PBFA-I (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3522-3534 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diode experiments on the PBFA-I pulser using a magnetically insulated ion diode are described. The insulating magnetic field is supplied by self-field due to the ion current plus the field generated by a series field coil. In the experiments described here, the diode operated at the 10-TW, 2.5-MV level with over 300 kJ going to the diode on many shots. The operation of the diode, the dielectric anode, and the proton beam focusing are described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339275
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  • 2
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    Achromatic storage ring for free-electron lasers (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3550-3551 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We discuss the possibility of taking advantage on achromatic magnetic mirrors (α magnets) to construct a storage ring for free-electron lasers, where the electron trajectories are energy independent in the straight sections. This property might be efficiently used to noticeably reduce the momentum compaction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339279
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  • 3
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    Bulk properties of composite media. I. Simplification of bounds on the shear modulus of suspensions of impenetrable spheres (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3503-3513 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study third-order upper and lower bounds on the shear modulus of a model composite made up of equisized, impenetrable spherical inclusions randomly distributed throughout a matrix phase. We determine greatly simplified expressions for the two key multidimensional cluster integrals (involving the three-point distribution function for one of the phases) arising in these bounds. These expressions are obtained by expanding the orientation-dependent terms in the integrand in spherical harmonics and employing the orthogonality property of this basis set. The resulting simplified integrals are in a form that makes them much easier to compute. The approach described here is quite general in the sense that it has application in cases where the spheres are permeable to one another (models of consolidated media such as sandstones and sintered materials) and to the determination of other bulk properties, such as the bulk modulus, thermal/electrical conductivity, and fluid permeability.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339273
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  • 4
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    Spectroscopy of 3-μm laser transitions in YAlO3:Er (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3570-3572 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: YAlO3:Er laser crystals with medium dopant concentration can emit on different transitions of the 4I11/2→4I13/2 manifolds within a laser pulse. In a 20-at. % doped a rod the three most prominent laser lines oscillate at wavelengths of λ1=2.73 μm, λ2=2.79 μm, and λ3=2.92 μm. The temporal sequence of λ1, λ2, and λ3 within a train of relaxation oscillations has been measured and is analyzed on the basis of inversion, linewidth of transitions, and ion-ion interaction in the 4I13/2 state.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339283
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  • 5
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    Comparison between two models of nonlocal heat flux in laser-generated plasma (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3592-3594 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two models of nonlocal heat flux in laser-driven plasmas have been presented by Luciani and Mora, and by Albritton et al. The disagreement between them is shown to be only apparent: when used in exactly the same conditions, they actually give the same answer, provided that the correct tabulated propagator is used in the integral giving the flux. A steepening of the temperature profile at critical density still exists for both models.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339287
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  • 6
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    Novel microstructures for the in situ measurement of mechanical properties of thin films (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3579-3584 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper discusses microfabricated structures designed for the in situ measurement of the mechanical properties of thin films under residual tensile stress. The film is deposited and patterned on a (100) silicon substrate in which 5-μm-thick diaphragms have been fabricated. When the silicon diaphragm is etched from the backside in an SF6 plasma, the microstructures are released and deform under the residual tension. Measurement of this deformation in conjunction with appropriate mechanical models determines the mechanical properties of interest. We have used these structures to study benzophenonetetracarboxylicdianhidride-oxydianiline/metaphenylene-diamine polyimide films. Typical value for the residual stress to modulus ratio in this case was determined to be 0.011±0.001 while the ultimate strain at break was found to be 4.5% for 5.5-μm-thick films. For thicker films (8.5 μm), the film did not fail until 8% strain was reached.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339285
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  • 7
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    Electromagnetic wave generation utilizing plasma instabilities (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3598-3604 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new device for the production of microwave radiation is proposed. The device exploits the electromagnetic instabilities of nonequilibrium plasmas. The plasma parameters are chosen in such a way as to avoid electrostatic instabilities. The main advantage of the proposed device over other microwave production devices is that in the former case one can achieve very high-power densities in the active medium and utilize large volume of the same. This opens the way to the generation of much larger amounts of microwave power than before. A linear stability analysis of a homogeneous magnetized plasma having anisotropic velocity distribution shows that a plasma of volume 104 cm3 immersed in a magnetic field of 1 T and having parallel and perpendicular temperatures of 1 and 2 keV, respectively, is capable of emitting about 0.4 kJ of energy in microwave form in a time span of about 10−10 s.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339262
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  • 8
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    Operational characteristics of a gas discharge stabilized by a rotating magnetic field (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3616-3620 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The operational characteristics of a gas discharge under the influence of a transverse rotating magnetic field are described. The terminal characteristics and measurements of gas-discharge temperature are presented. Experimental results indicate that a transverse rotating magnetic field can improve gas-discharge stability and useful power deposition into the plasma. A 25% increase in discharge power loading has been demonstrated by using this discharge-stabilization technique.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339264
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  • 9
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    Reversible structural relaxation in Fe-Ni-B-Si metallic glasses (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3633-3638 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reversible structural relaxation has been studied in (Fe1−xNix)80B10Si10 by differential scanning calorimetry and x-ray diffraction. It is found that surface crystallization plays a major role in inhibiting reversibility. In consequence, previously published data have presented a misleading picture about the composition dependence of the reversible effect in Fe-Ni-B-Si, which simply increases monotonically with Ni composition. There is no evidence that chemical short-range order plays any role in reversibility, and the data have been quantitatively modeled by simply assuming that reversible relaxation is caused by the thermal repopulation of excited structural states.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339267
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  • 10
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    Bending piezoelectricity in monomorph polymer films (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3643-3646 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Studies with laser-induced pressure pulses show the existence of a piezoelectric monomorph polarization in 22–25-μm-thick PVDF films after irradiation with a 30-kV electron beam. The bending piezoelectric stress constant β31 and the tensile piezoelectric strain constant d31 were determined for such monomorph samples. Both β31 and d31 increase with increasing irradiation time and a linear relation between them is found. The highest values of β31 and d31 achieved are 90 nC/m and 3 pC/N, respectively. A theory is presented for a film with a step-shaped distribution of polarization along the thickness. A bending piezoelectric strain constant f31 is defined which relates the electric displacement to the stress gradient along the thickness. It is concluded that β31 is determined by the distribution of d31 and f31.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339243
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  • 11
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    Defect production in electron-irradiated, n-type GaAs (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3660-3664 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature-dependent Hall-effect measurements have been performed on pure, n-type, vapor-phase epitaxial GaAs, irradiated by 1-MeV electrons at room temperature. The energies and production rates of two dominant defect centers, C2 and C3, are as follows: E2=EC−0.148, E3=EC−0.295 ±0.002 eV, τ2=2.0, and τ3=0.5±0.2 cm−1, in good agreement with deep level transient spectroscopy (DLTS) data. However, the most important result of this study is a very high production rate, τAS (approximately-equal-to)4±1 cm−1, for "shallow'' acceptors (CAS) lying below E3. In fact, CAS is produced at a much higher rate than all of the DLTS traps observed in this energy range, proving that close to half of the primary defects in electron-irradiated GaAs are evidently not seen by DLTS. The high CAS production rate has important implications for microscopic models of C1 and C2, rendering unnecessary the assumption that one of these centers must be an acceptor in order to explain the Hall-effect results. Finally, we show that all available Hall-effect and DLTS data are consistent with CAS representing Ga-sublattice damage, which has not been observed before.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339246
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  • 12
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    X-ray study of reactive ion etch damage to 〈100〉 silicon (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3677-3681 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Contact resistance measurements, x-ray double-crystal diffraction, and Auger electron spectroscopy were used to evaluate reactive ion etch (RIE) damage to silicon wafers. Wafers were exposed to plasmas at different powers with gas mixtures of CHF3/O2 and O2 only. The CHF3/O2 mixture was typical of a gas mixture used for etching contacts to silicon. The O2 alone was used as a damaging, bombarding gas. Some oxidation of silicon occurs during the O2 bombardment. However, O2 was used to determine the effects of ion bombardment at conditions similar to those that occur during RIE etching of contacts. It has been found that the depth of damage to the underlying silicon increases with cathode bias and that at −550 V the damage is 200–250 A(ring) deep. The damage at −550 V consists of two layers: one is an amorphous and/or polycrystalline silicon layer at the surface 100–125 A(ring) thick. The surface layer contains impurities as a result of the reactive ion etch process. The second single-crystal dilated layer, 100–125 A(ring) thick, lies beneath the amorphous/poly Si layer. The thickness of these layers is the same when either CHF3/O2 or O2 alone are used as the etchant gases.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339248
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  • 13
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    Multipulse laser damage of GaAs surfaces (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3688-3693 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An in-depth study of the single and multiple-pulse laser (10 ns, 10 Hz, and 1064 nm) damage of (100) single-crystal gallium arsenide surfaces is presented. The surface morphologies resulting from both chemical etching and laser-induced damage are discussed. The damage behavior is determined from the damage probability and accumulation curves. The dependence of damage on accumulated incident energy in multipulse experiments is determined and compared with the behavior of other semiconductor and metal surfaces. Finally, Auger electron spectroscopy is employed to measure the elemental depth composition of GaAs wafers using Ar+ ion sputter etching. This technique is used to study the changes in elemental depth profiles caused by the laser-induced damage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339250
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  • 14
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    Study of the interfacial structure between Si (100) and thermally grown SiO2 using a ball-and-spoke model (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3751-3754 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural models of the a-SiO2/(100)Si interface have been constructed using plastic balls and spokes to study the atomic scale structure of the thermally grown a-SiO2/(100)Si interface. Various properties of the models such as distortion energy, composition, and interface undulation have been estimated on the basis of the models. The results of the simulation indicate that the energetically favorable interface is not flat but undulated with (111) facets or has a transition region with partially oxidized Si atoms. High-resolution transmission electron microscopy images have also been simulated for the models.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339260
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  • 15
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    Deep levels as local probes for the study of superlattices (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3772-3777 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two kinds of deep levels have been studied in GaAs/GaAlAs superlattices: electron irradiation-induced defects and manganese. In both cases we confirm the localized character of the wave function by showing the invariance of the energy levels with respect to former band edges of the superlattice constituting materials. We obtain information on the energy levels of the electron and hole bands in the superlattice from the observed ionization energies of these deep levels and compare these results to energy level calculations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339215
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  • 16
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    Effect of plastic deformation on electronic properties of GaAs (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3791-3798 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic study of plastically deformed (in compression) GaAs was carried out employing deep-level spectroscopies, optical absorption, and electronic transport measurements. Deformation-induced changes in the free-carrier concentration, the mobility, and occupation of deep levels were associated with a deep acceptor defect. Changes of the optical absorption in deformed samples were found to be due to a localized stress field of dislocations rather than transitions via localized levels. No evidence was found of any meaningful increase (〉2×1015 cm−3) of the concentration of EL2 or other midgap donors for deformation up to about 3%. Thus, it is evident that the enhancement of the electron paramagnetic resonance signal of the arsenic antisite AsGa in deformed semi-insulating GaAs must be due to the increased ionization of AsGa rather than the generation of new antisite defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339218
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  • 17
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    Ballistic transport in hot-electron transistors (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3816-3820 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that the performance of hot-electron transistors and other ballistic devices can be greatly improved if a focused beam of energetic electrons is injected into the active region of a high-speed device. The results of the Monte Carlo simulations of 72 000 electrons show that the angular distribution of electrons arriving at the collector of a hot-electron transistor is sharper since those electrons injected into the base under large angles primarily contribute to the base current. Our calculations also confirm that ballistic motion may be considerably enhanced by the built-in electric field in the base region. Based on these results, we propose a new device—the double base hot-electron transistor—where the first base acts as an "electron gun'' focusing and accelerating the electron beam, which is then injected into the second (active) base where an input signal is applied. Our calculations show that the mean transit time of electrons traversing the active base can be considerably reduced and that the fraction of energetic electrons reaching the collector can be significantly increased in the proposed double-base hot-electron transistor in comparison with a conventional hot-electron transistor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339223
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  • 18
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    High-forward-voltage junction capacitance including effects of excess carrier storage in electron-hole plasma (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3853-3856 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A previous quasistatic junction space-charge region capacitance model is improved by including the Fermi statistics and energy band-gap narrowing that occurs in electron-hole plasmas. The model is applicable for junctions under large forward voltages. A factor of 2–4 is predicted when the present capacitance model is compared with the previous capacitance model.
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    URL: http://dx.doi.org/10.1063/1.339228
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  • 19
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    New application of complex magnetic materials to the magnetic refrigerant in an Ericsson magnetic refrigerator (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3873-3878 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A complex new magnetic refrigerant, suitable for the ideal Ericsson cycle, has been investigated. Above ∼15 K it is necessary to use ferromagnets as a magnetic refrigerant. However, temperature variation for the magnetic entropy change in a homogeneous ferromagnet is not suitable for the Ericsson cycle. The present paper verifies, from theoretical analysis, that a complex ferromagnetic material, for instance, (ErAl2)0.312(HoAl2)0.198 (Ho0.5Dy0.5Al2)0.490, has the most suitable characteristics for the ideal Ericsson cycle, including two kinds of isomagnetic field processes. On the basis of the above consideration, a sintered layer structural complex has been prepared, composed of three kinds of RAl2.15 layers, where R's are rare-earth atoms. From specific heat measurements made on this complex, its entropy and entropy change have been determined. It has been concluded that the complex magnetic material is the most hopeful refrigerant for the Ericsson cycle.
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    URL: http://dx.doi.org/10.1063/1.339232
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  • 20
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    Electromagnetic modes of a normally magnetized ferromagnetic slab (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3889-3891 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dispersion relations of the long-wavelength retarded magnetic modes of a ferromagnetic slab magnetized perpendicular to its plane are derived. A comparison with the magnetostatic Damon–van de Vaart [J. Appl. Phys. 36, 3453 (1965)] modes is presented, and the parameters affecting the deviations of the magnetostatic modes from the exact ones are discussed. The theory is applied to a calculation of the ferromagnetic resonance lines of an yttrium iron garnet film.
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    URL: http://dx.doi.org/10.1063/1.339234
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  • 21
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    Thermophotometric study of phase transformations in silver-zinc alloy thin films (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3941-3946 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transformations between β1, ζ, and β phases in a sputter-deposited Ag-50 at. % Zn alloy thin film were examined by a developed thermophotometric apparatus. Good observations were made using the change in reflectivity of the thin film with temperature and time, and some characteristic transformation behaviors in the thin film were made clear. Kinetics of the β1→ζ transformation were analyzed using the Johnson–Mehl–Avrami equation. The activation energy obtained from the relaxation time measured at different temperatures was 220.6 kJ/mol. It was much larger than that in the bulk. The time exponent of the equation was 1.51. This shows that the ζ phase nucleates at the grain edge and/or the boundary of the β1 phase after site saturation under a zero nucleation rate. The activation entropy was a large positive value, and the transformation interface was expected to have a complicated structure.
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    URL: http://dx.doi.org/10.1063/1.339214
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  • 22
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    Photoreflectance of reduced poly 3-methyl thiophene (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3932-3935 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present photoreflectance studies of poly 3-methyl thiophene as a function of doping level, temperature, and light intensity. The as-grown polymer does not show any photoreflectance signal. As the doping level is reduced by electrochemical reduction of the polymer, two peaks are observed in the spectra. One peak, at ∼2 eV, corresponds to the band-to-band transition. The second peak, at ∼1.7 eV, corresponds to the transition between the top of the valence band and the upper bipolaron level. These results are almost identical to those reported for the electrolyte electroreflectance of the polymer when it was in contact with an aqueous electrolyte. The major difference in the results using these two techniques is in the observation, in photoreflectance, of the bipolaron transition in the neutral, fully reduced polymer. This was interpreted in terms of bipolaron formation through photodoping. The similar spectral characteristics between the photodoped and electrodoped bipolaron are further support to the findings that the bipolarons are intrinsic excitations which are independent of the way in which they are generated.
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    URL: http://dx.doi.org/10.1063/1.339212
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  • 23
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    Thermal process models for the interpretation of microstructures formed during electron-beam surface melting (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3953-3959 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analysis is presented of mechanisms involved in forming rapidly solidified surface layers on a substrate material by an electron beam. This can be achieved either by (i) point-source or by (ii) line-source melting. In mode (i) it is critical that minimal cooling occur between successive beam oscillations so as to avoid solid-state induced transformations where adjacent rapidly solidified zones overlap. In mode (ii) a linear heat source is formed by oscillating the beam sufficiently rapidly and moving this line source transversely over the surface to form a homogeneous rapidly solidified layer. The conditions for this to occur are mathematically predicted. A theoretical model yields the minimum oscillation frequency for this to occur. Under steady-state heat flow conditions the following features were studied: stability of the cavity, geometry of the melt zone, and rate of cooling during solidification. It is shown that a linear vapor cavity exists in mode (ii), provided the oscillation frequency of the beam exceeds a critical value, typically ≈250 Hz. The predicted cavity depth is shown to correspond to the depth of the turbulent flow region, as revealed by microstructural observations. The molten pool length is governed by the steady-state heat conduction requirements, whereas the depth is found to be empirically related to process parameters. Predicted values of the cooling rate are compared with those deduced from the microstructural scale and the solidification morphology for the case of a molybdenum high-speed steel (M7). Theoretical and experimentally obtained values are shown to be in good agreement.
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    URL: http://dx.doi.org/10.1063/1.339193
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  • 24
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    High-power broad-area lasers fabricated by selective area growth (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3984-3986 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-power broad-area stripe lasers have been fabricated by using a one-step selective area growth technique in the metalorganic chemical vapor deposition system. This technique provides devices with excellent control both on electrical and optical confinements. cw output power of more than 350 mW/facet (700 mW total) was achieved, and a differential quantum efficiency of 0.625 mW/mA/facet (1.25 mW/mA total) was observed.
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    URL: http://dx.doi.org/10.1063/1.339199
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  • 25
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    Free-electron laser with electrostatic wiggler (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3104-3109 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new free-electron laser (FEL) scheme, using a periodic electrostatic field superposed on an electrostatic centrifugal system, is presented. By means of linear fluid theory, the Raman FEL dispersion equation is derived. We show that there is a new FEL instability near the electron transverse resonance besides the usual one near the beam resonance. The operating conditions, emission frequencies, and maximum growth rates of these two kinds of instabilities are obtained analytically. It is found that these results are in quite good agreement with numerical solutions of the dispersion equation.
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    URL: http://dx.doi.org/10.1063/1.339359
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    Simultaneous study of interferograms and the emission of shock-heated plasmas behind strong shock waves in argon (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4002-4003 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technique of simultaneous study of optical interferograms and emission of radiations of shock-heated plasmas behind strong shock waves (M〉14) was used. This enabled the recording of both the interferogram and emission characteristics of the plasma on the same photofilm by using streak photographic techniques.
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    URL: http://dx.doi.org/10.1063/1.339206
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    A simple contactless method for evaluating the low-temperature parameters of a two-dimensional electron gas (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4005-4007 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A sample of two-dimensional electron-gas material is stuck, face upward, onto two flat, Corbino-configuration metal electrodes, thereby providing capacitive coupling (a few pF) to the gas through the high-dielectric-constant substrate material. At high magnetic fields and low temperatures, the minima in σxx produce a high resistance in series with the two coupling capacitors, and this resistance can be measured with an audio-frequency (10 kHz) capacitance bridge. The resistance peaks in high-mobility samples are very sharply defined, and their periodicity in 1/B gives directly the electron concentration. At low fields, prior to the appearance of the peaks, the resistance is proportional to μB2/n, thus relative mobilities may be determined.
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    URL: http://dx.doi.org/10.1063/1.339208
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    Raman study on the variation of the silicon network of a-Si:H (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3150-3155 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The silicon network of the "device-quality'' hydrogenated amorphous silicon (a-Si:H) fabricated by a glow-discharge method has been studied by means of Raman spectroscopy, infrared spectroscopy, and mechanical stress measurements. Attention has been focused on the variation of the network structure induced by the change in fabrication conditions. An increase in the substrate temperature results in a shift of the TO peak in the Raman spectra toward a high wave number, an increase in the compressive mechanical stress, and a decrease in the hydrogen content in a-Si:H. It is found that the hydrogen content of the monohydride configuration (CHm) has a positive correlation with the compressive stress in a-Si:H, and the hydrogen content of the dihydride configuration (CHd) has the opposite correlation. It is also found that the position of the TO peak (ωTO) shifts toward a low wave number as the CHm increases, and that the ωTO shifts toward a high wave number when an external compressive stress is applied to a-Si:H. The experimental results suggest that the shift of the TO peak in the Raman spectra originates from the change in the force constant of Si–Si bonds induced by hydrogen atoms of a monohydride configuration in the silicon network. Variations of the silicon network caused by the change in substrate materials are also discussed.
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    URL: http://dx.doi.org/10.1063/1.339365
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    Growth and modeling of highly doped, thin-layer silicon-modulation-doped superlattices by intermittent solid-phase epitaxy (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3190-3194 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Earlier results determined the diffusion coefficients of Ga in both amorphous and crystalline silicon. Computer modeling shows that growth of silicon n-i-p-i superlattices with high doping and narrow layer width by either conventional molecular-beam epitaxy or solid-phase epitaxy leads to smearing of the Ga profile because of its relatively large diffusion coefficients in both the amorphous and crystalline states. A method of sequential amorphous deposition and crystallization is presented that minimizes the Ga diffusion. Superlattices with Ga and Sb doping of ≈5×1018 cm−3 and layer thickness of ≈25 nm are shown. The crystal surface after all regrowths produces very sharp low-energy electron diffraction patterns, and Auger electron spectroscopy shows the numerous growth interfaces to be clean to better than 1% of a monolayer of O or C.
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    URL: http://dx.doi.org/10.1063/1.339344
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    Heteroepitaxial growth of InP on GaAs by low-pressure metalorganic chemical vapor deposition (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3209-3211 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxial growth of InP on GaAs by low-pressure metalorganic chemical vapor deposition is reported. Trimethylindium-trimethylphosphine adduct was used as the indium source and PH3 as the phosphorus source. From x-ray and scanning electron microscopy examination, excellent crystallinity InP epilayers with specular surface morphology can be grown on (100) GaAs substrates. The composition of this heterostructure was identified by the Auger depth profiles. The electron mobility of the undoped InP epilayer can reach 4700 cm2/V s at room temperature. An evident effect of growth temperature on electron mobility is also demonstrated. Carrier concentration profile shows that the carrier distribution in the epilayer is very uniform. The efficient photoluminescence compared with that of InP homoepitaxy shows that high-quality InP/GaAs heteroepitaxial layers can be obtained.
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    URL: http://dx.doi.org/10.1063/1.339321
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    Band-gap narrowing in semi-insulating gallium arsenide (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3228-3233 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model of energy band-gap narrowing in SI GaAs crystals doped by chromium is proposed in order to explain the higher values of intrinsic carrier densities deduced from galvanomagnetic measurements in some Cr-doped SI GaAs crystals by various authors. This model is based on the screening of electron-hole interaction due to the chromium Cr2(arrow-right-and-left)Cr3+ state transitions. Also some other possible reasons for band-gap narrowing in SI GaAs are discussed.
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    Use of the R-matrix propagation technique to calculate the electronic energy levels of aperiodic structures: Application to an AlAs/GaAs quasiperiodic superlattice (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3237-3240 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The R-matrix propagation technique is shown to be a practical technique for estimating the electronic energy levels in aperiodic semiconductor structures within a simple one-dimensional potential model. As an example, the energy levels of an AlAs/GaAs quasiperiodic Fibonacci superlattice are calculated for electrons, light holes, and heavy holes. Those features which are unique to the quasiperiodic nature of the structure, rather than due to the choice of basis, are identified. These features are shown to be of a magnitude which makes detection using optical techniques possible.
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    URL: http://dx.doi.org/10.1063/1.339327
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    Fabrication and dc characteristics of small-area tantalum and niobium superconducting tunnel junctions (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3257-3266 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We discuss the fabrication and dc electrical characteristics of small-area (1–6 μm2) superconducting tunnel junctions with Ta or Nb base electrodes and Pb or Pb0.9Bi0.1 counterelectrodes. These junctions have very small subgap leakage currents, a "sharp'' current rise at the sum-gap voltage, and show strong quantum effects when used as microwave mixers. The use of a low-energy (∼150 eV) ion cleaning process and a novel step-defined fabrication process that eliminates photoresist processing after base electrode deposition are discussed. Tunnel barriers formed by dc glow discharge oxidation were the most successful. Tunnel barrier formation by thermal oxidation and ion-beam oxidation is also discussed. An oxidized Ta overlayer (∼7 nm thick) was found to improve the characteristics of Nb-based junctions. The electrical characteristics of junctions with different electrode and barrier materials are presented and discussed in terms of the physical mechanisms that lead to excess subgap current and to a width of the current rise at the sum-gap voltage.
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    URL: http://dx.doi.org/10.1063/1.339332
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    Schottky barrier with the degenerate dilute magnetic semiconductor Cd1−xMnxSe (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3253-3256 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Consequences of the splitting of the electronic levels in a dilute magnetic semiconductor have been observed by measuring the capacitance of a simple Schottky barrier at 4.2 K in the presence of magnetic fields up to 60 kOe. The material used was a single crystal of degenerately Ga-doped Cd1−xMnxSe. The variation of the diffusion potential in the semiconductor as a function of magnetic field was deduced from C(V) measurements at 1 MHz. By assuming the presence of an interfacial layer at the metal/semiconductor interface, the derived band conduction splitting is in relatively good agreement with that calculated by using the magneto-optical properties of the material.
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    Effects of tunneling on a-Si:H Schottky barriers (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3285-3287 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schottky diodes have been prepared by depositing semitransparent metallic films (Pd, Cr, and Au) onto hydrogenated amorphous silicon (a-Si:H) grown by the glow-discharge method. The a-Si:H was n doped and undoped presenting different densities of gap states (Ns). Barrier heights Φb were measured by internal photoemission and correlated to Ns. The activation energies were also determined. The results are understood in terms of both thermionic-field-emission tunneling and resonant tunneling through localized states of the conduction-band tail. It is found that the latter tunneling effect has a remarkable influence on the experimentally determined value of Φb.
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    Experiments concerning the connective nature of superconductivity in YBa2Cu3O7 (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3308-3313 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Samples of YBa2Cu3O7 have been prepared with rather sharp inductive transitions having in the best cases breadths of 7 K and midpoint Tc values of 88 K. The resistive Tc midpoints are 92–95 K with transition widths of ±1–2 K. Flux shielding at 4.2 K is normally 100% and flux expulsion at 4.2 K reaches 95%. However, even small fields of order 1 mT decouple some 15%–20% of the volume, allowing flux to enter the samples. Resistive Hc2 measurements suggest that Hc2(0) varies from 〈1 to 〉300 T, depending on the criterion chosen. ac susceptibility measurements suggest that Hc2(0) is ∼60 T. Magnetization current densities are relatively high (150–200 A/mm2 at 1–10 T at 4.2 K) but measured transport current densities are small (≤1 A/mm2). Magnetization current densities at 77 K are about two orders of magnitude lower. The samples were seen to be heavily twinned by light microscopy (scale of 1–5 μm) and by transmission electron microscopy (scale of ∼250 nm). It is concluded that these measurements are consistent with a model of superconducting regions of reduced dimensionality coupled by tunneling.
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    Study of induced uniaxial anisotropy in magnetic thin films by transverse susceptibility (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3328-3330 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transverse susceptibility was measured in Co86Ti14 ferromagnetic thin films which possess an induced in-plane uniaxial anisotropy, as a function of a dc magnetic field H applied parallel to the hard axis. The susceptibility reaches a sharp maximum when H is close to the value of the anisotropy field HK previously determined. A theoretical model based upon a small deviation of H from the hard axis is developed to evaluate the angular dispersion of HK.
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    A semiempirical model for the laser-induced molten zone in the laser recrystallization process (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3408-3415 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper a semiempirical model is presented which describes the amount of silicon that is molten in laser recrystallization of polycrystalline silicon layers. The model is based on the fitting of rather simple, physically meaningful expressions to experimentally obtained values for the width of the molten zone induced by a scanning laser beam. The influence of laser power, scan velocity, preheating temperature, and capping layer structure can be described.
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    Application of sputtered SiO2 insulator to Nb/AlOx/Nb Josephson junctions (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3432-3435 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sputtered SiO2 films were applied as an insulator in all-refractory Josephson circuits. The sputtered SiO2 exhibited excellent insulating characteristics with respect to infrared absorption, breakdown voltage, and step coverage. The sputtered SiO2 was employed in the actual fabrication of Nb/AlOx/Nb Josephson circuits, and no deterioration in the junction quality or the critical current density was observed. An 8Kbit memory cell array was fabricated, and perfect chips with no failures were obtained. In these chips, the integrity of the insulation and continuity was verified for four-level Nb electrodes. This indicates the availability of sputtered SiO2 in all-refractory Josephson integrated circuits.
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    Surface-wave-induced total absorption of radiation in an inhomogeneous warm plasma (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3446-3447 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have found conditions in which a structure consisting of an optically thin underdense warm plasma layer adjacent to a half-space of homogeneous overdense warm plasma acts as a 100% absorber for an obliquely incident p-polarized electromagnetic wave. Two mechanisms are involved in this phenomenon: conversion of the electromagnetic wave into a plasma wave and resonant excitation of a surface wave by the plasma wave.
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    Rapid thermal annealing of InP using GaAs and InP proximity caps (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3456-3458 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rapid thermal annealing of InP in an inert atmosphere is demonstrated using face-to-face GaAs and InP proximity caps to protect the active surface from decomposition. No surface damage of any kind is detected by optical microscopy, photoluminescence spectroscopy, or Raman scattering on samples annealed for 4 s at temperatures up to 850 °C. As application, the rapid thermal annealing of Si-implanted InP samples is carried out. Full activation of the implanted species is obtained at annealing temperatures of 850 °C. Rapid thermal annealing of InP using a GaAs proximity cap promises to be a practical technology for the fabrication of semiconductor devices based on InP.
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    Behavior of ion-implanted junction diodes in 3C SiC (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3469-3471 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: p-n junction diodes have been formed by ion implantation of B or Al in 3C SiC and annealing at 1365 °C. The current-voltage characteristics of the Al-implanted structures show little rectification. The B-implanted diodes show rectification, with ideality factors of 2.2 and higher, breakdown voltages between 5 and 10 V, and a series resistance of the order of 20 kΩ. The current-voltage characteristics were measured between room temperature and 270 °C. The extracted ideality factors increase with temperature.
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    Electric arc explosions: A thermal paradox (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3477-3479 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The maximum pressures developed for electric arc explosions in water range as high as 50 000 atm. It was thought that these pressures were due to a sudden heating of the water to high temperatures with resulting, and equally sudden, high pressures. There are several reasons why this hypothesis is paradoxical, the main one being that temperatures of no less than 107 K would be required somewhere in the water arc. In this communication we discuss recent water arc explosions performed at the Massachusetts Institute of Technology. The unusual phenomena observed put these explosions in the category of experimental paradigm.
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    A study of pulsed energized particle collection in a bench-scale cylindrical electrostatic precipitator (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2626-2632 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Careful laboratory measurements have been conducted on a 5-cm-diam wire-cylinder electrostatic precipitator (ESP) in order to examine and understand the salient electrical behavior, particle charging, and collection characteristics for pulse powering under clean plate conditions. The importance of electrical parameters has been examined experimentally to determine the variation in performance for medium width pulses up to 250 μs. Operation at reduced current levels is shown to be possible only when the dc pedestal voltage is below corona inception. A good fit of the experimental data to predictions given by a spatiotemporal model indicates that the physics can be effectively described for both dc-powered and pulsed systems. In particular, the impact and interplay of particle diffusivity and electron charging is investigated. For ESPs of small size, electron charging appears to be significant.
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    Threshold in electron-beam end-pumped II-VI lasers (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2633-2639 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron-beam end-pumped lasers from different bulk grown II-VI compounds have been experimentally studied and compared under similar preparation and excitation conditions. The reasons for the lasing threshold variations are discussed. The first results on e-beam pumped CdMnTe lasers and end-pumped CdTe lasers are reported. The order of lowest to highest threshold is found to be from CdSe, ZnCdSe, CdS, CdTe, CdMnTe, and ZnSe. The comparisons between lasing conditions are used to evaluate the contribution of the intrinsic semiconductor parameters to lasing threshold. Experiments with a large number of samples indicate that the influence of intrinsic and extrinsic parameters on lasing threshold are in most cases comparable. Therefore, for most bulk II-VI lasers, the average threshold pump power density reductions with the elimination of extrinsic factors are expected to be less than several times. These findings are further supported by our threshold and relative slope efficiency measurements on lasers with different output mirror couplings.
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    Dispersion of acoustic surface waves by velocity gradients (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2660-2664 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The perturbation theory of Auld [Acoustic Fields and Waves in Solids (Wiley, New York, 1973), Vol. II, p. 294], which describes the effect of a subsurface gradient on the velocity dispersion of surface waves, has been modified to a simpler form by an approximation using a newly defined velocity gradient for the case of isotropic materials. The modified theory is applied to nitrogen implantation in AISI 4140 steel with a velocity gradient of Gaussian profile, and compared with dispersion data obtained by the ultrasonic right-angle technique in the frequency range from 2.4 to 14.8 MHz. The good agreement between experiments and our theory suggests that the compound layer in the subsurface region plays a dominant role in causing the dispersion of acoustic surface waves.
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    Tomography of m=1 mode structure in tokamak plasma using least-square-fitting method and Fourier–Bessel expansions (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2702-2706 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method is discussed for reconstruction of the emissivity profile from projections. The emissivity profile is expanded into Fourier–Bessel expansions, of which coefficients are determined by the use of least-square-fitting method with the help of the Akaike information criterion. Tomographic reconstruction of the m=1 mode structure is obtained in JIPP T-II tokamak during the precursor oscillation of the sawtooth crash. The m=1 mode structure fits Wesson model rather than the Kadomtsev model.
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    Theoretical study of a plasma column sustained by a guided electrostatic wave in the presence of a constant axial magnetic field (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2713-2721 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We examine the axial structure of a surface and pseudosurface-wave-produced overdense plasma column immersed in a constant axial magnetic field. The theory allows us to derive dimensionless axial profiles of the normalized: plasma density, wave number, wave power, and wave electric field amplitude. Both cases of (i) weak magnetic field (ωc/ω〈1, surface-wave excitation) and (ii) strong magnetic field (ωc/ω〉1, pseudosurface-wave excitation) are considered in free fall, diffusion, and bulk recombination discharge regimes. In a weak magnetic field, only one mode (pure surface wave) can be excited, whereas in a strong magnetic field, many pseudosurface waves may occur.
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    Distribution functions in linear viscoelastic theory (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2763-2770 
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    Source: AIP Digital Archive
    Topics: Physics
    Notes: The relaxation function of stress can be interpreted in terms of the distribution function of relaxation times. The retardation function of strain can be interpreted in terms of the distribution function of strain. The two distribution functions, or spectra, belonging to the same physical system are related by integral transforms. These transforms have been discussed in earlier papers. However, the discussion was not entirely satisfactory because it missed the appearance of single lines associated with truncated spectra, and because it employed integrals over improper and ill-defined functions. This paper gives an alternative treatment which is believed to be more satisfactory mathematically. The distribution functions are found to be the imaginary components of two complex, analytical functions which are the generating functions of all other functions of viscoelastic theory.
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    Silicon-on-insulator material formed by oxygen implantation and high-temperature annealing: Carrier transport, oxygen activity, and interface properties (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2793-2798 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crucial roles of high-temperature annealing (1300–1340 °C) and ambient gas are emphasized by the electrical properties of structure fabricated on silicon-on-insulator by deep oxygen implantation. Hall-effect measurements down to 77 K, as well as the characteristics of front channel and back channel transistors, show that the silicon overlay is quasihomogeneous, as a consequence of drastic improvement of the buried interface region. This is illustrated by the high carrier mobilities (1250 cm2 V−1 s−1 for electrons at 300 K), the dominance of acoustic phonon scattering, and the interface parameters that are more favorable than after low-temperature anneals and similar to those of bulk Si. The properties and the temperature behavior of oxygen-related donors are also investigated via the Hall effect. About 1015 cm−3 thermal donors are generated around 450–550 °C, while 1017 cm−3 new donors are formed at 750 °C. New donors presumably originate from the interface states of SiOx precipitates.
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    Annealing and oxidation behavior of low-pressure chemical vapor deposited tungsten slicide layers on polycrystalline silicon gates (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2830-2835 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A WSix≈2.6 film was deposited by low-pressure chemical vapor deposition at 350–420 °C onto a P-doped polycrystalline silicon/SiO2/Si substrate. This polycide structure (with or without a subsequent As+ source/drain implant) was heat treated in the following manner: (i) 1000 °C/N2 anneal for 20 min, (ii) oxidation both in dry oxygen and in steam ambients at 920–950 °C (50 min–8 h), and (iii) N2 anneal as well as dry oxidation at 920 °C/50 min. Cross-sectional transmission electron microscopy, Rutherford backscattering, secondary ion mass spectrometry, and sheet resistance measurements were used for characterization. The as-deposited film was mostly amorphous with a fine grain structure. The N2 anneal caused the formation of a polycrystalline WSix〉2 film containing tetragonal WSi2. Dry oxidation produced a void-containing SiO2 layer atop the silicide film. However, the SiO2 layer was impregnated with W particles when the silicide film was steam oxidized. The role of excess Si in refractory metal silicide films during annealing and oxidation is discussed. The effect of stress at the corners of a step in a patterned wafer during the oxidation of tungsten polycide is also demonstrated.
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    On the balance between silylene and silyl radicals in rf glow discharges in silane: The effect on deposition rates of a-Si:H (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2803-2811 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Plasma enhanced chemical vapor deposition (PECVD) of amorphous hydrogenated silicon (a-Si:H) is typically performed in low-pressure (≤0.5 Torr) radio frequency (rf) discharges in gas mixtures containing silane (SiH4). The initiating step is electron impact dissociation of silane, whose products are primarily the silylene (SiH2) and silyl (SiH3) radicals. The ratio of SiH2 to SiH3 in the plasma is important because these radicals incorporate differently into the a-Si:H film; and therefore the characteristics of the film are a function of the ratio [SiH3]/[SiH2]. The initial silane dissociation step is followed by a series of hydrogen abstraction, silylene insertion, and silyl association reactions which subsequently alter this ratio. The branching ratios for electron impact dissociation of silane, as well as the rate constants for the subsequent reactions, have not been measured or are uncertain. Using a model for a rf discharge in silane gas mixtures, the effects of branching ratios for silane dissociation, and rate constants for key reactions are investigated. We find that in order for SiH3 to be the dominant radical, as currently thought, its branching ratio from electron impact dissociation of SiH4 must exceed 0.75, and the yield for H atoms in the branch for SiH2 must also exceed 0.75. The deposition rate of a-Si:H is then controlled by the yield of H atoms and the subsequent generation of radicals by hydrogen abstraction from SiH4. These results require that the silyl association reaction has a rate constant ≤10−11 cm3 s−1, and that the rate constant for insertion of SiH2 into silane exceeds 10−11 cm3 s−1.
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    a-Si:H prepared by ion bombardment activated hydrogen incorporation during Si evaporation (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2836-2842 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: a-Si:H is prepared by vacuum evaporation of Si from a crucible kept at high positive potential relative to the substrate. The concomitant bombardment of the growing film surface with ionized vapor atoms (Si+) is found to activate the incorporation of hydrogen atoms cracked off from residual water molecules (pressure=2×10−7 Torr); a-Si:H containing up to 25 at. % of H may thus be obtained. The dark conductivity changes from activated behavior (low conductivity) to hopping (high conductivity) behavior by screening off this bombardment, while the dangling bond content (2×1017〈Ns 〈1018 cm−3), as determined by electron-spin resonance, does not change within an order of magnitude. The hydrogen incorporation into the Si structure is studied by infrared absorption, revealing most of the incorporated hydrogen to prevail near the void surfaces in the Si–H2 configuration. The results point at the existence of an inhomogeneous film structure (microstructure), the specific features of which are controlled by the ion bombardment.
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    The integro-differential equations for time-dependent space-charge decay currents in media between radially symmetrical electrodes (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2858-2864 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using a single charge-carrier species with a field-independent mobility model, dimensionless, nonlinear integro-differential equations have been derived whose solutions would exactly predict the time-dependent current produced by the drift and collection of space-charge swarms in media between electrodes with cylindrical and spherical symmetries. The equations are the one-dimensional solutions of the mathematical problems involving arbitrary initial space-charge distributions whose initial currents may or may not be space-charge limited. In principle, if the initial charge distributions were known, the solutions would reduce to first-order, nonlinear differential equations which then could be numerically integrated. The general equations are applied to a specific example of a charge-density distribution which is important in scientific and technological applications.
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    An effective dipole theory for band lineups in semiconductor heterojunctions (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2885-2897 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An effective dipole theory is presented to estimate the band lineups at the interface of a lattice-matched or nearly matched semiconductor heterojunction. The theory is based on the formation of an effective dipole at the interface which causes additional shift ΔEv in the difference of the band edges. A set of equations are derived from which δEv can be solved iteratively. The calculation requires the values of the top of the valence band and several bulk band-structure parameters of the constituent semiconductors as input. The dipole effect is evaluated by considering the charge transfer induced by the penetration of the effective mass electrons representing the bulk band states into the quantum barrier of the neighboring semiconductor. The theory is applied to predict the band offset values of more than 100 heterojunctions involving group IV, III-V, and II-VI semiconductors. Of the 30 heterojunctions for which the experimental data have been reported, the predicted values differ from the data by only about 0.1 eV on average. Extension of the present theory to several special interface systems is also discussed.
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    Novel method for determining the anisotropy constant of MnFe in a NiFe/MnFe sandwich (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2929-2932 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that an in situ Kerr rotation measurement is a very effective technique for the study of antiferromagnetic (AF) ferromagnetic (F) film couples. Magnetic signals can be obtained even in the case where the (AF) is the top layer up to at least 200 A(ring) of AF thickness. We have used this in situ approach combined with ion milling to study the thickness dependence of the magnetic properties of Mn50Fe50/Ni80Fe20 systems. We observe that the exchange bias field has a surprisingly sharp onset at a critical thickness of AF∼50 A(ring). We show that this is consistent with a simple model and that the magnetic anisotropy of MnFe can be estimated from the observed critical thickness to be ∼1.35×105 erg/cm3. The exchange field showed the predicted proportionality to the inverse of the F thickness from ∼50 to 400 A(ring). Auger spectroscopy and spin polarized secondary electron emission have been used to rule out gross artifacts due to ion milling.
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    Analytic parametrization of transport coefficients of Lennard–Jones (n,6) fluids (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2250-2255 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Simple, easy to use analytic formulas for the calculation of neutral-gas transport properties such as viscosity, thermal conductivity, and diffusion coefficients are presented. The formulas are based on least-squares parametrizations of accurate numerical calculations of collision integrals for Lennard–Jones (n,6) fluids with n=9, 12, and 18. The accuracy of these formulas is shown to be of the order of 1%–2% for a wide range of fluid conditions. Analytic formulas for reduced transport coefficients are also proposed. The simplicity and accuracy of these results allow the inclusion of reliable neutral-gas transport properties in the computer modeling of high-pressure discharges, e.g., arc lamps, without the penalty of large increases in execution times.
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    Phase formation and dissociation in the thin-film Pd/Al system (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2269-2274 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phase formation has been investigated for thin films in the following systems: Al/Pd, Pd2Al/Al and Pd/PdAl/Al between 200 and 450 °C. The films were prepared by sequential evaporation and coevaporation, annealed under vacuum, and analyzed by Rutherford backscattering and x-ray diffraction. Pd2Al3 is the dominant growing phase in the initial stages of the reaction for these samples. Al is the dominant moving species during the formation of Pd2Al3.
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    Magnetic properties of Fe-implanted sapphire (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3069-3071 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Vibrating sample magnetometry has been used to investigate the magnetic properties of sapphire implanted with 400-keV 56Fe ions to a dose of 1×1017 ions/cm2 and isochronally annealed at temperature ranging from 700 to 1450 °C in vacuum for 1 h. The specimens are superparamagnetic or ferromagnetic, depending upon the annealing temperature or the size of α-Fe particles precipitated inside sapphire. The precipitation of α-Fe has been confirmed by x-ray diffraction. From x-ray diffraction line broadening, it has been confirmed that the size of α-Fe particles monotonically increases from 3.5 to 38 nm with annealing temperature. The critical size for superparamagnetic behavior has been roughly determined to be 7 nm. The saturation magnetic moment suggests that after the annealings at 850 to 1200 °C, 92%±8% of the implanted Fe ions exist as α-Fe.
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    High-temperature behavior of tungsten and TiN films on polycrystalline silicon (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2479-2481 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical and materials properties of low-temperature oxide (LTO) covered tungsten and TiN films on polysilicon after a 1000 °C furnace anneal have been studied. The TiN was unaffected by the anneal. Its resistivity was a stable 42.5 μΩ cm, there was no reaction with the silicon or LTO, and adhesion was good. The tungsten films had 20% oxygen dissolved in the metal due to the LTO process. Upon annealing, oxygen diffused to the W-Si interface and produced a 120-A(ring) SiO2 film which lead to poor adhesion and electrical contact. Deposition of a 200-A(ring) tantalum film between the W and the LTO helped to solve this problem.
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    Low-loss epitaxial ZnO optical waveguides on sapphire by rf magnetron sputtering (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2482-2484 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical waveguide loss of about 0.55 dB cm−1 has been measured on epitaxial ZnO films on sapphire by magnetron sputtering. Measurements were also made of the refractive index of those films. The experimental results are compared with theory when TE and TM guided waves propagate in the plane at an arbitrary angle with respect to the c axis where the c axis is lying in the plane of the film. Surface acoustic wave (SAW) properties were also measured for SAW propagating along the c axis of ZnO film on the (011¯2)-oriented Al2O3 substrate.
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    Aerosol generators for singlet oxygen production (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2508-2517 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two aerosol generators for O2(a1Δ) production were designed, fabricated, and tested over a wide range of operating conditions. Each generator consisted of an injector assembly, a reaction chamber, and a nonmoving centrifugal phase separator, and differed from the other principally in the number of individual injector elements incorporated into the design (1 vs 5). A one-dimensional engineering model of two-phase reacting flow was developed and compared to the experimental aerosol performance data. Similar comparisons were also made with available data regarding the performance of generators based upon the sparger and wet wall concepts. These comparisons indicated that quenching losses in regions of two-phase flow were heavily influenced by surface effects. The data indicated a collisional probability for quenching of O2(a1Δ) at the gas-basic H2O2 interface in the vicinity of 2±1×10−3. The implications of the results of data correlations given herein relative to the design of compact, high energy density generators are discussed.
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    Blocked impurity band detectors—an analytical model: Figures of merit (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2533-2540 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We are presenting an analytic model for the figures of merit of a novel extrinsic infrared quantum detector—the blocked impurity band (BIB) detector. The detector consists of top and bottom contacts, a heavily doped active layer, and a nearly intrinsic layer, called the blocking layer, to stop the motion of hopping carriers in the impurity band. The responsivity, gain, excess noise factor, and detectivity of the BIB detector are calculated as functions of the device dimensions, doping concentrations, and the applied reverse bias, which controls the electric field in the depletion region, devoid of hopping carriers, of the device underneath the blocking layer. Central to our model is the inclusion of impact ionization of carriers in the calculation of the detector response and of the associated noise. For practical detector dimensions and doping concentrations, and at 2-V reverse bias, we calculate the responsivity to be on the order of 2 A/W, and detectivities, with 1012 photons/cm2 s background photon flux, on the order of 1013 cm Hz1/2/W. We provide analytic expressions for the figures of merit which should prove useful to other researchers in the field who want to optimize the detector design.
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    Magnetization curling in coated particles (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2576-2577 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rigorous micromagnetic calculation is presented for the nucleation by the magnetization curling mode in an infinite circular cylinder, which has a uniaxial anisotropy (parallel to the cylinder axis) only in a cylindrical shell, on the surface. Numerical values used in a computed example are those of acicular γ-Fe2O3 particles, coated with CoFe2O4.
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    Temporal evolution of beam emittance from a field-emission electron gun (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1564-1567 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temporal evolution of the beam emittance and beam brightness from a field-emission electron gun (1.3 MV, 0.5 kA, 30 ns) has been measured with nanosecond time resolution by using a novel Cerenkov-electro-optic diagnostic. Observations show that guns provided with velvet-backed cathodes behave differently than, and are superior to, the more conventional graphite cathodes.
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    Appropriate use of the strength parameter in solid-state slab laser design (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1595-1604 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The manner in which the strength parameter is used in the design process for high-average-power slab lasers is examined. Fracture toughness, an intrinsic measure of the strength of brittle materials, is adopted as the appropriate parameter for comparison of different materials in a selection process. Conversely, an estimate of actual component strength is used in fixing a safe operating stress for the laser by a weibull scaling of fracture data. Measurement methods for characterizing these two strength parameters are examined for both laser glasses and crystals. Experimental results illustrating these techniques are given.
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    Viscoelastic behavior of polymer layers with inclusions (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1613-1615 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The viscoelastic properties of very thin layers of a composite, consisting of TiO2 particles in a polyester-urethane binder, were determined by dynamic indentation measurements. Air inclusions appear to have a great influence on the viscoelastic properties. Application of Honig, Wierenga, and van der Linden's extended theory [J. Appl. Phys. 62, (square, solid)(square, solid)(square, solid)(square, solid) (1987)] to our composite with two types of inclusions, pigment and air, yields a modulus of elasticity that is in agreement with the experimental values up to a pigment volume concentration (c1) of 0.4. The experimentally found maximum in the curve of the modulus of elasticity as a function of c1 is also predicted with this model. The experiments show a more or less constant loss tangent, in accordance with the theoretical prediction that the loss tangent is independent of c1.
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    Hot-electron transport in In0.53Ga0.47As (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1842-1849 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Monte Carlo routine has been used to simulate hot-electron transport across narrow regions of heavily doped In0.53Ga0.47As. The doping level/widths considered correspond to those proposed for the base of hot-electron transistors. For doping levels of order 1018 cm−3, the injected hot electrons suffer inelastic scattering by the coupled plasmon-optic phonon mode. The performance of hot-electron transistors is characterized by the base transfer factor which relates a change in collector current with a change in emitter current. The base transfer factor is determined from the simulations for a range of base widths and operating conditions. Results for InGaAs are compared with those for GaAs. Under comparable operating conditions, the InGaAs hot-electron transistor offers a higher transport efficiency and hence, higher current gain compared with that of GaAs. We have used the Monte Carlo routine to simulate the performance of experimental results from InGaAs hot-electron transistors. The simulations are in good agreement with the experimental results.
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    Backscattering analysis of electron-beam-induced diffusion of tin in GaAs from dopant emulsions (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1778-1781 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A scanned electron beam was used to diffuse tin in GaAs from doped emulsions. Rutherford backscattering method was used to investigate the results of the diffusion. The diffusion was greatly enhanced by capping the emulsion with evaporated silicon dioxide.
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    Self-consistent domain theory in soft-ferromagnetic media. III. Composite domain structures in thin-film objects (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1952-1959 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The self-consistent domain theory, based on micromagnetic principles, is further developed in order to incorporate all possible solenoidal two-dimensional magnetization distributions in plane-parallel thin-film objects with arbitrary lateral shape. A decomposition of the object into a number of disjunct plane-parallel subregions that completely cover the object's area is put forward. In each subregion, a solenoidal M distribution is defined with the M vector parallel to the subregion's boundary, so that the M distributions in adjacent subregions properly link either via a continuous transition, or via a 180° wall at the intermediate boundary. Two types of subregions are distinguished; namely, the simple connected regions and the so-called parallel regions, being a special type of multiple connected region. In the first category, the basic structures as defined in the preceding paper on this subject are present. The parallel regions are closed ringlike configurations that are built of simpler units—the parallel segments. A parallel segment is a region bounded by two orthogonal trajectories of the same set of straight lines, while two of these straight lines close the segment at either end. No points of intersection of members of this family of lines are found inside the segment. In a specific parallel region, the distance between the orthogonal trajectories is the same for all segments. Adjacent segments in a parallel region are separated by a domain wall which is the locus of centers inside the cross section of the segments of circles that touch at corresponding orthogonal edges of both of the segments involved. A systematic procedure is developed for constructing the parallel subregions, and it is shown that, with this, all possible two-dimensional solenoidal M distributions can be recovered.
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    Photoinduced effects in a mordenite-AgI inclusion compound (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1984-1988 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper describes the photoinduced effects in a mordenite-AgI inclusion compound due to Ar laser light. Its photosensitization has an irradiation power density threshold instead of the energy density threshold usually observed in many photosensitive materials. The threshold decreases as the temperature decreases. After a certain period of irradiation, the photoinduced reaction occurs accompanied by transitory luminescence. The above characteristics are not observed in pure AgI. To explain these characteristics a model is presented in which Ar laser irradiation makes a photoinduced intermediate state of AgI in mordenite.
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    Photoluminescence investigation of InGaAs-InP quantum wells (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2003-2008 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The properties of InGaAs-InP single quantum wells have been studied by using the photoluminescence technique. Samples were grown by atmospheric pressure metalorganic vapor phase epitaxy. The photoluminescence of nominally undoped quantum wells is studied as a function of temperature and excitation power. The role of an excitonic process in 4-K radiative recombinations is pointed out. The best linewidth obtained for a 140-A(ring) well is 4.5 meV, fairly close to the limit imposed by alloy fluctuations in the InGaAs thick layers. Radiative recombination is more and more efficient with decreasing well thickness and higher than in InGaAs bulk material.
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    Luminescence and excitation energy transfer in monolayer assemblies incorporating organic dye molecules. II (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2022-2027 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Excitation energy transfer in the monolayer assembly is studied in which the same combination of organic dye molecules as in our preceding paper [J. Appl. Phys. 62, (square, solid)(square, solid)(square, solid) (1987)] is employed, but donor molecules are organized into the J aggregate, which consists of large arrays of densely packed chromophores and is characterized by a strong and narrow absorption band (J band) considerably red shifted from the corresponding monomer absorption band and a sharp resonance fluorescence. The acceptor molecules can be dissolved in the J aggregate, resulting in quenching of the resonance fluorescence and appearance of sensitized fluorescence of the acceptor. Quenching of resonance fluorescence by the acceptor obeys the Stern–Volmer relation with a temperature-dependent Stern–Volmer constant. Lowering the temperature from T=293 to 77 K causes the decrease of both the Stern–Volmer constant and the intensity ratio of the sensitized fluorescence to the resonance fluorescence. Comparison of the Stern–Volmer constants and luminescence lifetimes of the donor in the isolated and aggregated states reveals that energy transfer from the J aggregate occurs far more efficiently than from the monomer. The observed temperature dependence is analyzed under an assumption that the rate constant of radiative transition is proportional to 1/T. Such an assumption is rationalized by the model that the coherent exciton extending over a certain domain moves over about 3000 donor molecules, occasionally reaching the vicinity of an acceptor.
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    Mössbauer spectroscopy of Sn-doped GaAs grown by metalorganic vapor-phase epitaxy (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1739-1744 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs epitaxial layers, doped with 119Sn-enriched tin, have been grown by metalorganic vapor-phase epitaxy (MOVPE). 119Sn Mössbauer spectroscopy and Hall measurements have been used to characterize the layers. Three tin species are observed in the as-grown material. One of these is identified as the SnGa shallow donor site and another is associated with electrically inactive Sn sites that may be SnGaSnAs pairs or Sn3As2-like clusters or microprecipitates. The free carrier concentrations (Nd−Na) obtained from the Hall data agree quantitatively with the concentrations of SnGa sites from the Mössbauer data for samples prepared with MOVPE Sn/Ga ratios up to 0.02 and Nd−Na 〈6×1018 cm−3, thereby showing no evidence for compensation up to this doping level. Annealing under arsine creates an acceptor species which is identified as SnGaVGa. High-energy electron irradiation may also produce this compensating acceptor species.
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    Properties of carbon clusters in TNT detonation products: Graphite-diamond transition (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1761-1767 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermodynamic properties of condensed carbon in the detonation products of TNT have been analyzed with a statistical mechanical model. The calculations show that the heat of formation of diamondlike particles in detonation products is increased by 1–2 kcal/mol (0.04–0.08 eV), relative to that of the graphitic or carbynelike low-pressure phase. The density of the low-pressure phase also appears to be about 10% higher than that of graphite. The short condensation times of 10−7–10−8 s suggest carbon clusters with a high surface energy. The heat of formation indicates cluster sizes of about 100 A(ring).
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    Stress and microstructure of sputter-deposited thin films: Molecular dynamics investigations (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1796-1799 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In magnetron sputter deposition the intrinsic mechanical stress of films of refractory metals passes a tensile stress maximum, decreases and then becomes compressive with decreasing working gas pressure. To elucidate the dependence of internal tensile stress on film growth and microstructure, a two-dimensional molecular dynamics simulation is employed. The evolving structure is determined at an atomic level and the stress is calculated as a function of the kinetic energy of adatoms and fast neutralized inert gas atoms which arrive at the film surface. These energies are dependent on the deposition geometry and the working gas pressure. The theoretical results are in qualitative agreement with experiment and reveal that the initial increase in tensile stress with increasing adatom and neutral incident kinetic energy is caused by a microstructural change from microcolumnar growth to a more densely packed atomic network with closed micropores. Interatomic attractive forces producing tensile stress can act most effectively in such a structure. The subsequent decrease in stress is attributed to a less defect-rich, better ordered absorbate structure formed at higher kinetic energies of arriving species. Stress is found to vary in a similar fashion as a function of incident kinetic energy for both sputtered atoms and fast neutrals. The compressive stress regime has not been investigated.
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    Coupled mode theory in a lossy, nonlinear transmission line system (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2095-2102 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method of analysis that uses the coupled mode formulation has been developed to study the coupling phenomenon in a system of two lossy, identical transmission lines. These lines are uniformly coupled and also have uniformly distributed, nonlinear shunt capacitance and series inductance. The transmission lines are excited at one end with two voltage sources of the same frequency but of different amplitude and phase, and are terminated with proper load impedances at the other end. The coupled mode theory has been developed with the aid of quasiharmonic analysis of the codirectional, nonlinear coupled lines. The analytical expressions for the power carried by each mode in the transmission lines can be obtained for a special case of the low loss system in which the phase difference of two coupled modes is assumed to vary slowly with the position along the line. The derived analytical expressions are also used to study the effect of changing input conditions and circuit parameters on the location where relative minima and maxima occur.
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    Electrostatic solution to a specialized wire-routing problem (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2116-2121 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Potential theory and graph theory are used to create a specialized automatic router. Members of one set of points are completely connected to members of another set of points by nonintersecting curves all contained in the plane. Choices are offered for the linking paths from local information. The problem domain may be the plane or a bounded subset of the plane containing excluded areas
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    Dual phase formation in multilayered Ni-Al by ion beam mixing (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2145-2147 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion beam mixing is used to homogenize multilayered thin films of nickel and aluminum, vapor deposited onto pure nickel substrates. Doses of 500-keV Kr+ at fluences of 2×1016 ions/cm2 produced a supersaturated solid solution of between 16 and 23 at. % aluminum in nickel at room temperature. Subsequent thermal treatment at 425 °C for 1 h resulted in the formation of a dual phase structure of γ and γ' with grain sizes in the range 640 to 710 A(ring). Although the dual phase structure was obtained either by ion beam mixing followed by thermal annealing or by thermal annealing alone, only the former process resulted in a surface film with a texture. The films are stable against thermally induced grain growth at temperatures up to 700 °C for 10 h.
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    Spherical aberrations of multipoles (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1149-1153 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is demonstrated in this article that for an electromagnetic 2n−pole system with n=odd, the only existing symmetric aberration which could be used to correct the spherical aberrations of a round lens is the order of 2n−3. Thus, a 2n−pole corrector can only be used to cancel the aberration of round lenses of order 2n−3.
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    Temperature runaway of microwave irradiated materials (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1167-1170 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A numerical procedure for calculating the steady-state temperature distribution generated by microwave absorption is described. The procedure can be applied to the case of material for which the permittivity is nonlinearly temperature dependent and can be used to simulate the conditions when temperature runaway occurs. The criteria for temperature runaway are explicitly given for a cylindrical sample which is irradiated with a uniform electric field and is simultaneously cooled by convection. The results illustrate the method of predicting runaway and avoiding it by changing the experimental conditions as a function of the characteristics of the irradiated materials.
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    Analysis of the effect of thermal nitridation of silicon dioxide on silicon interstitial concentration (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1195-1201 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal nitridation of SiO2 has been analyzed in order to understand how the process results in large interstitial supersaturations in the silicon substrate as manifested by the greatly enhanced diffusivity of substitutional impurities such as phosphorus and boron and the growth of stacking faults. It is postulated that the interstitial injection is due to the growth of a thin oxygen-rich layer at the dielectric/silicon interface and is magnified by the presence of a nitrogen-rich layer near the interface which constrains the interstitials to the interface region. Because of the slow rate of growth of the oxide-rich layer, an initial transient period exists during which many of the interstitials created at the interface are injected into the substrate, raising the concentration in the silicon. For long times, a steady-state analysis shows that almost all of the interstitials generated at the interface diffuse back into the oxide. By extending a previous analysis for standard oxidation of silicon, a quantitative model was developed for interstitial supersaturation in the silicon which incorporates the transient regime and successfully predicts the diffusion enhancement of phosphorus with time. In addition, nitrogen incorporation in the bulk of the oxynitride and oxidation at the dielectric/silicon interface were modeled by an exponential decay to an equilibrium structure with a common time constant.
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    Electron states in two coupled quantum wells—A strong coupling-of-modes approach (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1290-1297 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper, coupled-mode equations for two strongly coupled quantum wells are derived via two methods: (i) a "reciprocity'' formulation similar to the reciprocity theorem in electromagnetics, and (ii) a variational formulation. It is shown that both formulations give the same coupled-mode equations. Numerical results for the electron energy levels and wave functions for two coupled asymmetric or symmetric quantum wells are presented, using both the strong coupling-of-modes theory and the conventional weak coupling-of-modes theory, and are compared with those of the exact calculations. The two-coupled-quantum-wells model is useful in the study of electron transport in superlattice via hopping or tunneling.
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    Spreading of Au dots on InP surfaces (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1245-1250 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Circular gold dots, measuring about 200 μm in diameter and either 150 or 300 nm in thickness, have been produced on {100}, {110}, and {111} substrates of indium phosphide by a combination of vapor deposition and photolithographic processing, annealed at temperatures ranging from 420–460 °C, and subsequently examined by optical microscopy. During annealing, a reaction product, bounded by well-defined crystallographic planes of the substrate, forms, expands parabolically with annealing time, and eventually saturates due to the limited supply of gold. Generally, reactions proceed at least three times faster at {100} and {110} planes than at {111}In planes, in which reactions proceed about three times faster than at {111}P planes. Analysis of concomitant reaction kinetics yields an activation energy of 8.6±3.0 eV for reactions at {111}In planes. Results are interpreted in terms of a preferential interfacial reaction at {111}In planes, which is controlled by solid-state diffusion and eventual escape of phosphorus.
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    Ellipsometric studies on zinc sulfide thin films grown by atomic layer epitaxy (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1385-1393 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Refractive index and thickness measurements of zinc sulfide thin films were carried out using spectroscopic ellipsometry. The films studied were grown by atomic layer epitaxy (ALE). The thicknesses of the films were between 26 and 658 nm. In the analysis of the ellipsometric data a two-layer film model was used. The modeling was performed for all the films in the wavelength range 400–600 nm and for some films in the range 350–700 nm. The top layer thickness increased from about 5 to 20–30 nm as a function of the total film thickness. At λ=500 nm, the real part n of the refractive index in the top layer was 1.30–2.00 and in the lower layer 2.14–2.41, also depending on the total film thickness. The reference bulk value was 2.42. The imaginary part of the refractive index of the layers could be modeled to be 0.01 in the range 400–600 nm. At 350 nm k was of the order of 0.05. From the refractive index results the average volume fraction of zinc sulfide in the films was determined using effective medium approximation (EMA). The volume fraction increased from about 0.6 to 0.95–0.97 in the thickness range 26–400 nm. After 400 nm the fraction was slightly reduced. The EMA results indicate that the first stages of crystallization of zinc sulfide on the amorphous glass substrate are highly nonideal and that the surface roughness increases with the total film thickness. Except for the boundary regions, the ALE-grown zinc sulfide thin films exhibit very good crystalline properties also in terms of an optical analysis.
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    Radiation-induced conductivity of polymers in different gases (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1420-1424 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The conductivity induced in various polymers by continuous irradiation with x rays was measured under a vacuum and in different gases. Oxygen, nitrogen, and air increased the induced conductivity in polyvinylidene fluoride (PVDF), while argon left it almost unchanged. Argon and air decreased it in Kapton, and air decreased it in Mylar. The saturation current is that stationary value of the current that is obtained if all radiation-generated carriers are removed by the applied field. The measured current amplitude for PVDF in an atmosphere of air of 100% humidity reached almost 50% of that current, while in the other materials it did not exceed 1% of the saturation value. Therefore, carrier removal by the applied field played a negligible role in Kapton and Mylar.
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    Electron-beam poling of piezoelectric polymer electrets (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1429-1432 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Irradiation with a monoenergetic electron beam is demonstrated as a poling technique for piezoelectric polymer electrets. Poling-current measurements during electron irradiation indicate a ferroelectric polarization of typically about 0.1 C/m2. The generated nonuniform polarization profiles are probed by means of laser-induced pressure pulses. It is found that the thickness of the unpoled sample volume is proportional to the 1.5th power of the electron energy used. The proposed method thus allows the fabrication of polymer electrets with a polarization zone of predetermined thickness for, e.g., application in flexure-mode devices.
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    Molecular-beam-epitaxial growth of GaAs(331) (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3766-3771 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The molecular-beam epitaxial growth of (331)-oriented GaAs and (100)-oriented GaAs were compared. Silicon-doping behavior was studied as a function of As/Ga flux ratio and substrate temperature at constant Si cell temperature. GaAs layers grown on (100) and (331)B were always n type. For growths on the (100) substrates, the carrier concentration increased by about a factor of 5 as the As/Ga ratio was increased from about 1 to 50. On (331)B GaAs, the carrier concentration started out 3 times higher than on GaAs(100) and remained relatively level up to a flux ratio of 20; it then began to rise, becoming about 30% higher at a V/III ratio near 50. (331)A layers were invariably p type at low As/Ga ratios. As the flux increased, the acceptor concentration dropped rapidly. At high flux ratios, the (331)A GaAs became n type, with a donor concentration approaching that on (100). Photoluminescence (PL) measurements taken on crystals grown side by side showed pronounced defect exciton peaks for GaAs(100), less pronounced peaks for (331)A crystals, and no peaks for (331)B crystals. The carbon acceptor peaks for (331)A crystals were at least an order of magnitude more intense than the exciton peaks. PL measurements were also taken on multiquantum wells grown on the (100) and (331)A orientations. PL data also indicated that carbon was incorporated more readily in the (100) and (331)A layers than in the (331)B layers. The results of these experiments can be explained on the basis of the crystal structure of the surface, the As/Ga flux ratios, and the amphoteric nature of silicon. At the surface of the (331)GaAs, both cation and anion dangling bonds extend into the vacuum: two Ga dangling bonds for every As dangling bond on (331)A, and the reverse for (331)B. In contrast, there is only one site offered in the (100) orientation: either a gallium or arsenic double dangling bond. Thus, the number of sites available for As bonding should be a determinant of carbon incorporation. Since the (331)B has the fewest such sites, it should incorporate the least carbon, as, indeed, was confirmed by our PL and capacitance-voltage data.
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    Rapid thermal annealing of hydrogenated amorphous silicon grown at low temperature (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1425-1428 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenated amorphous silicon with different levels of phosphorous doping has been deposited by plasma-enhanced chemical vapor deposition at a temperature of 125 °C. Its electrical properties are largely inferior to those of standard material grown at 275 °C, but they can be improved by a rapid thermal annealing process. The change in electrical conductivity depends on the doping level and is better for 0.1% than 1% or undoped samples. In this case the electrical conductivity, after annealing, increases by three orders of magnitude and is only a factor of 10 less than that of the best conducting material produced at 275 °C. The improvement in electrical properties is not causatively related to the loss of hydrogen. This low-temperature material, after annealing, forms relatively low resistance contacts with molybdenum or aluminum and is suitable for application in thin-film transistor technology.
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    Comment on "Numerical calculation of the temperature distribution and evolution of the field-ion emitter under pulsed and continuous-wave laser irradiation'' [J. Appl. Phys. 59, 1334 (1986)] (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1510-1510 
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    Source: AIP Digital Archive
    Topics: Physics
    Notes: A recent paper having to do with numerical calculations of the temperature distribution in field emitters is criticized for an error in the governing heat-conduction equation used to formulate the finite difference algorithm. The correct form of the equation is derived retaining a possibly significant nonlinear term in the final formula.
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    Characteristics of p-GaAs/n-Si heterojunctions grown by molecular-beam epitaxy (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3860-3865 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the electrical characteristics of p-GaAs/n-Si heterojunction diodes grown by molecular-beam epitaxy in an effort to investigate the quality of the heterointerface. Both Ga and As prelayers were used to initiate the growth of GaAs epilayers on Si substrates. Current-voltage and capacitance-voltage measurements were made between 300 and 83 K. Ideality factors for heterojunction diodes were as good as n=2.0, despite the 4.1% lattice mismatch between Si and GaAs. At high temperatures the I-V characteristics were dominated by generation-recombination mechanisms that lead to a temperature-independent logarithmic slope with applied bias. By removing a thin layer from the Si surface, the surface leakage current was reduced by more than an order of magnitude. The measured intercept voltages, as determined by capacitance-voltage measurements, have no strong dependence on the type of prelayer used to initiate the growth of the GaAs epilayer on Si substrates. The maximum spread in measured intercept voltages was about 1 V, the absolute value of which depends upon the condition of the interface.
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    Spatial system of the Wiser model of coal structure according to the second moment of the nuclear magnetic resonance line (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3892-3897 
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    ISSN: 1089-7550
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    Topics: Physics
    Notes: The second moment of the proton nuclear magnetic resonance line was calculated for the Wiser structure of coal according to the Van Vleck theory. The calculations were carried out assuming that the predominant interaction was the dipole interaction between protons. The interaction between protons and paramagnetic centers was estimated as minor, in the range of 0.15–0.27 G2. The result of the calculations both for the rigid structure and for the one with rotating fragments is similar to the experimental spin-spin relaxation time of the Gaussian component of free-induction decay observed for some coals. This result suggests that the Wiser molecule presents the macromolecular part in the molecular-macromolecular model of coal. Its maximal dimensions are X=24.1, Y=29.3, and Z=11.29 A(ring) and the distance between the two remotest protons is 34.5 A(ring).
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    Preparation of superconducting thin films of (La1−xSrx)yCuO4−δ by sputtering (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1524-1526 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting thin films of (La1−xSrx)yCuO4−δ have been prepared by sputtering with careful control of such preparation parameters as target composition, total pressure and composition of gases in the reactor, substrate material and temperature, and annealing conditions. In accordance with the bulk target materials, the superconducting films show K2NiF4-type x-ray diffraction patterns, although this crystal structure was not the sole requisite for the superconductivity of the films. The films prepared thus far have a superconducting transition onset of about 36 K and turn out to be fully superconducting at temperatures below 10 K.
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    Measurement of dispersion in electrodeposited Cu2O (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1528-1529 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By using an optical reflectance interferometry method the refractive index n of electrodeposited films of Cu2O was measured in the wavelength region of λ=0.466–1.2 μm. This measurement was an extension to the previously reported values. The result fits well to an empirical dispersion equation of the form n2=1+4.81λ2/(λ2−0.125), where λ is in μm. The dispersion values measured for electrodeposited films were found to be different from the reported values for other types of Cu2O.
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    Buried GaAs/GaAlAs laser with p-dopant implanted stripe as a mask for liquid-phase-epitaxy regrowth (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1535-1536 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Buried GaAs/GaAlAs double heterostructure lasers have been realized by combining a double heterostructure grown by metalorganic chemical vapor deposition, p-dopant implantation, stripes chemical etching, and liquid-phase epitaxy (LPE) regrowth of n− GaAlAs. Although the p-implanted top of the stripes were thermally annealed during the LPE burying, no regrowth occurred on them. Buried lasers were thus directly obtained while p-ohmic contact properties were good. The causes of such a phenomenon have been studied by transmission electron microscope and electron diffraction techniques. Typical threshold currents of 12 mA for a 270-μm cavity length were obtained. This technology offers the potential of low ohmic contact resistivity.
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  • 96
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    The effects of magnetic fields on carnauba wax electret formation (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1544-1545 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The results of thermally stimulated depolarization current and effective surface charge-density measurements indicate that magnetic fields do not produce carnauba wax electrets and that previously reported data can be attributed to nonmagnetic effects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339626
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  • 97
    Electronic Resource
    Electronic Resource
    A new system for vacuum deposition of refractory materials using an atmospheric-pressure inductively coupled plasma (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1017-1021 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have successfully developed a technique utilizing an atmospheric-pressure inductively coupled plasma combined with a low-pressure deposition chamber for deposition of thin films. The equipment and method of operation are discussed. Refractory powders (Nb and Y2O3) were injected into the plasma and deposited as Nb and substoichiometric yttrium oxide, YO1.49, onto Fe and Cu substrates. The substoichiometric yttrium oxide deposit adhered well to the Fe and Cu substrates, while the Nb deposit adhered well to the Fe only. The Nb deposit on the Cu substrate flaked and peeled probably because of stresses induced from the thermal expansion mismatch between the Nb and Cu. Further studies will be undertaken to better understand the processes occurring in this type of plasma-coating system in order to optimize the instrumental parameters for particular coating applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339859
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  • 98
    Electronic Resource
    Electronic Resource
    Shear strength of shock-loaded alumina as determined with longitudinal and transverse manganin gauges (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1120-1122 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The shear strength of shock-loaded commercial alumina (AD-85 manufactured by Coors) is determined in the 0–140-kbar range of shock stresses. Longitudinal and transverse manganin gauges were used to determine the principal stresses in the shocked specimens. Shear strengths were determined from the difference between the longitudinal and lateral stresses. It was found that the shear strength remains essentially constant at about 27 kbar for shock stresses between 60 kbar (the Hugoniot elastic limit) and the maximum shock amplitude tested in this series (142 kbar). The source for the high shear strength is attributed to the confining pressures that strengthen the comminuted ceramic. Evidence for this interpretation is obtained by considering the release profiles as recorded by the longitudinal gauges when the free-surface rarefactions reach gauge location.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339721
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  • 99
    Electronic Resource
    Electronic Resource
    Erratum: "Alkali reactions with wall coating materials used in atomic resonance cells'' [J. Appl. Phys. 62, 676 (1987)] (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4008-4008 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339867
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  • 100
    Electronic Resource
    Electronic Resource
    The kinetics and mechanism of oxide layer formation from porous silicon formed on p-Si substrates (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1042-1048 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of oxide layers from porous silicon layers formed on P substrates which present different and well-controlled porous textures is studied in detail. It is shown that the overall process leading to oxides with properties similar to standard thermal oxides consists of two steps: the oxidation of silicon in the porous layer and the densification of silica. The first step does not depend upon the initial texture of the layer, but is mostly determined by the porosity of the sample and the temperature of the oxidation sequence. The second step, oxide densification, which takes place at temperatures higher than 1000 °C, is very sensitive to the porous texture of the layer, the densification times increasing sharply with the average pore size. The densification process has a high activation energy, which can be related to the activation energy for the viscous flow of silica.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339761
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