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  • 1
    Electronic Resource
    Electronic Resource
    Structural and dielectric properties of epitaxial SrTiO3 films grown on Si(100) substrate with TiN buffer layer (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 2358-2362 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SrTiO3 thin films have been grown on Si(100) substrates by pulsed laser deposition using an epitaxial TiN film as a buffer layer, and their structural and dielectric properties were investigated as functions of deposition parameters. X-ray diffraction analysis showed that the SrTiO3 films were grown epitaxially in the wide range of substrate temperatures (400–650 °C) and ambient oxygen pressure (10−5 Torr–150 mTorr) with an orientation relationship of SrTiO3(100) // TiN(100) // Si(100) and SrTiO3〈010〉 // TiN〈010〉 // Si〈010〉. The crystallinity of the epitaxial films was improved with the increase of the substrate temperature and decrease of the ambient oxygen pressure, while the film surface morphology was degraded with increasing either of the two parameters. The relative dielectric constant of the films was revealed to depend both on the crystallinity and on the surface roughness of the films, the highest value of which was cursive-epsilonr=270 at 1 MHz, comparable to that of bulk SrTiO3. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364240
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  • 2
    Electronic Resource
    Electronic Resource
    Carbon-13 NMR spectra of alternating and random copolymers of methyl acrylate with styrene (1981)
    s.l. : American Chemical Society
    Macromolecules 14 (1981), S. 883-885 
    Details
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ma50004a080
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  • 3
    Electronic Resource
    Electronic Resource
    Preparation of superconducting thin films of (La1−xSrx)yCuO4−δ by sputtering (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1524-1526 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting thin films of (La1−xSrx)yCuO4−δ have been prepared by sputtering with careful control of such preparation parameters as target composition, total pressure and composition of gases in the reactor, substrate material and temperature, and annealing conditions. In accordance with the bulk target materials, the superconducting films show K2NiF4-type x-ray diffraction patterns, although this crystal structure was not the sole requisite for the superconductivity of the films. The films prepared thus far have a superconducting transition onset of about 36 K and turn out to be fully superconducting at temperatures below 10 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339617
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  • 4
    Electronic Resource
    Electronic Resource
    Atomic-scale formation of ultrasmooth surfaces on sapphire substrates for high-quality thin-film fabrication (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2615-2617 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The atomically ultrasmooth surfaces with atomic steps of sapphire substrates were obtained by annealing in air at temperatures between 1000 and 1400 °C. The terrace width and atomic step height of the ultrasmooth surfaces were controlled on an atomic scale by changing the annealing conditions and the crystallographic surface of substrates. The obtained ultrasmooth surface was stable in air. The topmost atomic structure of the terrace was examined quantitatively by atomic force microscopy and ion scattering spectroscopy as well as a theoretical approach using molecular dynamics simulations. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114313
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  • 5
    Electronic Resource
    Electronic Resource
    In situ determination of optical constants of growing hydrogenated amorphous silicon film by p-polarized light reflectance measurement on the surface (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7987-7989 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reflection of p-polarized laser light was monitored in situ to elucidate the surface reaction process in plasma chemical vapor deposition of a-Si:H. The reflectance oscillated with the film growth. The deposition rate, refractive index, and absorption coefficient of the film were evaluated so that the detected reflectance oscillation could be best fitted with the pattern calculated by using the thickness and optical constants of the growing film as variable parameters. The deposition rate was unchanged by the variation of substrate temperature in the range between room temperature and 250 °C, whereas the refractive index and absorption coefficient increased with the substrate temperature in this range. The presence of a loosely packed layer as thick as 5 nm was clearly indicated by the analysis of time-dependent reflectance variation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353912
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  • 6
    Electronic Resource
    Electronic Resource
    Parallel integration and characterization of nanoscaled epitaxial lattices by concurrent molecular layer epitaxy and diffractometry (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 536-538 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A material highway for building up crystal lattices and heterojunctions from molecular layers has been developed based on a concept of combinatorial lattice integration. The atomic-scale precision of automated multilane paving of multilayered thin films is in situ monitored by concurrent reflection high-energy electron diffraction. The designed nanolayered structures are rapidly verified by a concurrent x-ray diffractometer which has been developed for the purpose of this technology. This scheme corresponds to the concurrent two-dimensional Merrifield synthesis to form a variety of sequence-controlled layer structures in parallel and should be widely applicable for systematic fabrication and property screening of nanostructured materials and devices. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1385587
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  • 7
    Electronic Resource
    Electronic Resource
    Josephson plasma observed in underdoped (110) YBa2Cu3O7−δ films (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 506-508 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: (110) oriented YBa2Cu3O7−δ thin films have been epitaxially grown on vicinal (110)SrTiO3 substrates by pulsed-laser deposition. Films with different oxygen deficiencies were obtained by annealing under various oxygen ambient. These films have very smooth surface and with their c axis aligned in one direction in the substrate plane. Electronic transport and polarized far-infrared reflectivity measurements reveal the unique features of the c-axis charge dynamics. A c-axis far-infrared reflectivity edge associated with the Josephson plasma in the superconducting state is observed. Our results demonstrate the potential usage of (110) thin films for the investigation of intrinsic interlayer charge dynamics as well as device application of high Tc superconductors. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1342208
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  • 8
    Electronic Resource
    Electronic Resource
    In situ determination of the terminating layer of La0.7Sr0.3MnO3 thin films using coaxial impact-collision ion scattering spectroscopy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 187-189 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ analysis of the terminating atomic plane of c-axis oriented La0.7Sr0.3MnO3 thin films grown epitaxially on SrTiO3(100) substrate by laser molecular beam epitaxy has been carried out employing coaxial impact-collision ion scattering spectroscopy (CAICISS). The CAICISS time-of-flight spectroscopic studies reveal that the (001) surface of c-axis oriented La0.7Sr0.3MnO3 thin films is predominantly terminated with MnO2 plane. The azimuth rotational CAICISS measurements show a fourfold symmetry in the surface atom alignments establishing the square lattice structure of the terminating plane. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121750
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  • 9
    Electronic Resource
    Electronic Resource
    Transparent nanocrystalline diamond ceramics fabricated from C60 fullerene by shock compression (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3016-3018 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transparent nanocrystalline diamond ceramics, consisting of a few nanometer-sized diamond crystallites that are unstable in themselves because of higher surface energy, were fabricated successfully from C60 fullerene using a shock compression and rapid quenching technique. The platelets were transparent and very hard, nearly comparable to type IIa diamond. Transmission electron microscopy and electron energy loss spectroscopy revealed that individual crystallites had combined directly or through a very thin and modified sp3 carbon layer, which possibly stabilized the nanometer-sized crystallites. The size order and sp3 configuration of the nanotexture caused the transparency and hardness of the present material. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120248
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  • 10
    Electronic Resource
    Electronic Resource
    MgxZn1−xO as a II–VI widegap semiconductor alloy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2466-2468 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose a widegap II–VI semiconductor alloy, MgxZn1−xO, for the fabrication of heteroepitaxial ultraviolet light emitting devices based on ZnO. The c-axis oriented MgxZn1−xO films were epitaxially grown by pulsed laser deposition on ZnO epitaxial films and sapphire (0001) substrates using ceramic targets. Solid solution films were prepared with Mg content up to x=0.33, achieving a band gap of 3.99 eV at room temperature. MgO impurity phase segregated at x≥0.36. Lattice constants of MgxZn1−xO films changed slightly (∼1%), increasing in a axis and decreasing in c-axis direction with increasing x. These films showed ultraviolet photoluminescence at energies from 3.36 (x=0) to 3.87 eV (x=0.33) at 4.2 K. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121384
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