ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Computer simulation and analytical models for the time-of-flight experiment in amorphous silicon thin films (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4915-4923 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Computer simulation of the time-of-flight experiment in amorphous silicon p-i-n diodes is used to predict and interpret the terminal response following a transient strongly absorbed optical excitation. Numerical solutions and the associated physical interpretation illuminate the transport physics and the accuracy of the methods used to extract transport parameters. The interaction between free carriers and gap states is discussed on the basis of numerical results on the internal variable profiles. The influence on the transient photocurrent of band mobilities, transient trapping, and transient emission is investigated. Based on the interpretation of the computer solutions, certain analytical approximations are derived that allow extraction of parameters such as band mobilities, transition rates, and density of tail states.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343207
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Modeling the cutoff frequency of single-heterojunction bipolar transistors subjected to high collector-layer current (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 7125-7131 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High current densities in the collector layer reduce the cutoff frequency of heterojunction bipolar transistors. We develop a model based on analytical expressions that describe this reduction. These expressions represent the contributions from each of six regions defined in the output current-voltage characteristic. The model has parameters determined entirely by device physical makeup. It has no fitting parameters. Its predictions agree well with experimental data taken on two N/p+/n aluminum-gallium-arsenide/gallium-arsenide transistors having abrupt junctions grown by molecular-beam epitaxy. Because previous models omitted the effects of high current densities, their predictions agree less favorably. The development of the model considers the effects that compound-semiconductor properties such as velocity overshoot have on the cutoff frequency.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344536
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Thickness of p/n junction space-charge layers (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1249-1253 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model for finding the space-charge-layer thickness is developed based on the relevant device physics and on a space-charge-layer capacitance model which accounts for the effects of the free-carrier charges in the space-charge layer. Discrepancies of as much as 50% are predicted when the present model is compared with the conventional depletion model. A partitioned charge-based model is used to illustrated the usefulness of the model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342505
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Low-temperature p-n junction space-charge-region thickness including the effects of doping-dependent dielectric permittivity (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6369-6372 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper studies the thickness of silicon p-n junction space-charge regions at low temperature including the effects of doping-dependent dielectric permittivity ε(N), which is important for heavily doped semiconductor materials because of the presence of unionized impurity atoms that are subjected to polarization. The treatment is applicable for p-n junctions under all voltages and is not based on the conventional depletion approximation which assumes free carriers are negligible in the space-charge region. Comparison of the present thickness model including ε(N) and the conventional depletion model is included.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342072
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Direct experimental determination of voltage across high-low junctions (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 285-287 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-low (HL) junctions form part of many semiconductor devices, including back surface field solar cells. A first experimental determination and interpretation of the voltage across the HL junction under low- and high-injection conditions is presented as a function of the voltage across a nearby p/n junction. Theoretical analysis from first principles is shown to bear well on the experimental results. In addition, a test structure is proposed for measurement of the effective surface recombination velocity at the HL junctions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336830
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Quasistatic capacitance of p/n junction space-charge layers by the Leibnitz rule (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 561-564 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Leibnitz rule of integral calculus yields a useful expression for the quasistatic capacitance versus voltage characteristic of a p/n junction space-charge layer that holds for all doping profiles and for forward as well as for reverse applied voltages. This capacitance is the sum of two components. One accounts for the incremental mobile charge within the volume of the layer. The other accounts for the incremental mobile charge at its edges.This expression enables novel analytical characterizations and interpretations of numerical solutions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340086
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Forward-voltage capacitance of heterojunction space-charge regions (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 5015-5022 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analytical treatment is presented for modeling the capacitance of heterojunction space-charge regions under forward voltages. First, the conventional depletion model is reviewed and the inadequacy of the use of such a model at forward voltages is noted. The study then turns to the development of a more accurate model for the thickness and potential barrier of the space-charge region for all voltages. Based on this model and the approximation that the intrinsic level is piecewise linear with respect to position in the space-charge region, an analytical quasistatic capacitance model applicable for forward-biased conditions is derived. The model, however, encounters difficulties at very large forward voltages, and a qualitative treatment is employed there. The comparison of the present capacitance model with measured dependencies and with existing capacitance models is included.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340448
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Reply to "Comments on ‘Direct experimental determination of voltage across high-low junctions' '' [J. Appl. Phys. 59, 285 (1985)] (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2689-2690 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bellone, Caruso, and Vitale [J. Appl. Phys. 61,(square, solid)(square, solid)(square, solid)(square, solid)(1987)] dispute our assumption of an ohmic contact formed by the metal-semiconductor junctions to the low-doped region of a back-surface-field solar cell. Attention is drawn to the mechanism that can lead to an ohmic contact in our experiment. Experimental evidence cited in our paper and additional test data presented here show that the assumption of an ohmic contact is indeed valid. It is pointed out that our work has mainly focused on the alteration of the solar-cell structure only slightly to experimentally assess an aspect of the solar-cell theory. The overlapping part of the two studies were done independently.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337907
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Generalized reciprocity theorem for semiconductor devices (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 4743-4744 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A reciprocity theorem is presented that relates the short-circuit current of a device, induced by a carrier generation source, to the minority-carrier Fermi level in the dark. The basic relation is general under low injection. It holds for three-dimensional devices with position dependent parameters (energy gap, electron affinity, mobility, etc.), and for transient or steady-state conditions. This theorem allows calculation of the internal quantum efficiency of a solar cell by using the analysis of the device in the dark. Other applications could involve measurements of various device parameters, interfacial surface recombination velocity at a polycrystalline silicon emitter contact, for example, by using steady-state or transient photon or mass-particle radiation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336226
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Simultaneous extraction of minority-carrier transport parameters in crystalline semiconductors by lateral photocurrent (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 321-333 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mathematical analysis and parameter-extraction process for a new characterization method are presented. This method allows simultaneous measurement of the minority-carrier lifetime, diffusion coefficient, and diffusion lengths as well as surface recombination velocity. The technique employs semi-infinite two-dimensional photodiodes and uniform, instead of focused, illumination. The paper deals with the derivation of exact closed-form solutions associated with two-dimensional devices and discusses the simultaneous extraction of minority-carrier transport parameters.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345256
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...