ALBERT

Description: Low temperature Zn diffusion in GaSb, where the minimum temperature was 450 C, was studied. The pseudo-closed box (PCB) method was used for Zn diffusion into GaAs, AlGaAs, InP, InGaAs and InGaAsP. The PCB method avoids the inconvenience of sealed ampoules and proved to be simple and reproducible. The special design of the boat for Zn diffusion ensured the uniformality of Zn vapor pressure across the wafer surface, and thus the uniformity of the p-GaSb layer depth. The p-GaSb layers were studied using Raman scattering spectroscopy and the x-ray rocking curve method. As for the postdiffusion processing, an anodic oxidation was used for a precise thinning of the diffused GaSb layers. The results show the applicability of the PCB method for the large-scale production of the GaSb structures for solar cells.

Description: Indium phosphide is considered to be a strong contender for many photovoltaic space applications because of its radiation resistance and its potential for high efficiency. An overview of recent progress is presented, and possible future research directions for indium phosphide space solar cells are discussed. The topics considered include radiation damage studies and space flight experiments.

Description: Understanding solar cell response to pulsed laser outputs is important for the evaluation of power beaming applications. The time response of high efficiency GaAs and silicon solar cells to a 25 nS monochromatic pulse input is described. The PC-1D computer code is used to analyze the cell current during and after the pulse for various conditions.

Description: Four-terminal mechanically stacked solar cells were developed for advanced space arrays with line-focus reflective concentrators. The top cells are based on AlGaAs/GaAs multilayer heterostructures prepared by low temperature liquid phase epitaxy. The bottom cells are based on heteroepitaxial InP/InGaAs liquid phase epitaxy or on homo-junction GaSb, Zn-diffused structures. The sum of the highest reached efficiencies of the top and bottom cells is 29.4 percent. The best four-terminal tandems have an efficiency of 27 to 28 percent. Solar cells were irradiated with 1 MeV electrons and their performances were determined as a function of fluence up to 10(exp 16) cm(exp-2). It was shown that the radiation resistance of developed tandem cells is similar to the most radiative stable AlGaAs/GaAs cells with a thin p-GaAs photoactive layer.

Description: An investigation of solar cells based on AlGaAs/GaAs heterostructures with an internal Bragg reflector as the back-surface reflector is presented. The Bragg reflector is grown by low pressure metalorganic chemical vapor deposition on n-GaAs substrates in a horizontal resistively heated reactor. The Bragg reflector with its maximum reflectance centered at a wavelength of 860 nm consists of 12 pairs of AlAs/GaAs layers. The resulting Bragg reflector has a thickness of 0.072 micrometers for AlAs and 0.059 micrometers for GaAs. The multi-layered quasi-dielectric stack selectively reflects weakly absorbed photons with energies near to the GaAs band gap for a second pass through the photoactive region, thus increasing the photocurrent. The use of the Bragg reflector allows the external quantum efficiency to be increased in the long wavelength of the spectrum. The use of the Bragg reflector and an antireflective coating and prismatic cover allowed an efficiency of 23.4 percent to be obtained.

Description: The high efficiency solar cells based on multilayer AlGaAs/GaAs heterostructures, prepared by low temperature liquid phase epitaxy (LPE), were developed and tested. An investigation of the low temperature LPE process for the crystallization of AlGaAs heterostructures of as high as 24.0 to 24.7 percent under AMO conditions at concentration ratios of 20 to 100x, were reached. Developed solar cells show substantial radiation resistance to the damage induced by 3.75 MeV electrons.

Description: The Thermal Energy Storage-1 (TES-1) is a flight experiment that flew on the Space Shuttle Columbia (STS-62), in March 1994, as part of the OAST-2 mission. TES-1 is the first experiment in a four experiment suite designed to provide data for understanding the long duration microgravity behavior of thermal energy storage fluoride salts that undergo repeated melting and freezing. Such data have never been obtained before and have direct application for the development of space-based solar dynamic (SD) power systems. These power systems will store solar energy in a thermal energy salt such as lithium fluoride or calcium fluoride. The stored energy is extracted during the shade portion of the orbit. This enables the solar dynamic power system to provide constant electrical power over the entire orbit. Analytical computer codes have been developed for predicting performance of a spaced-based solar dynamic power system. Experimental verification of the analytical predictions is needed prior to using the analytical results for future space power design applications. The four TES flight experiments will be used to obtain the needed experimental data. This paper will focus on the flight results from the first experiment, TES-1, in comparison to the predicted results from the Thermal Energy Storage Simulation (TESSIM) analytical computer code. The TES-1 conceptual development, hardware design, final development, and system verification testing were accomplished at the NASA lewis Research Center (LeRC). TES-1 was developed under the In-Space Technology Experiment Program (IN-STEP), which sponsors NASA, industry, and university flight experiments designed to enable and enhance space flight technology. The IN-STEP Program is sponsored by the Office of Space Access and Technology (OSAT).

Description: This paper describes the engineering thought process behind the failure analysis, redesign, and rework of the flight hardware for the Brilliant Eyes Thermal Storage Unit (BETSU) experiment. This experiment was designed to study the zero-g performance of 2-methylpentane as a suitable phase change material. This hydrocarbon served as the cryogenic storage medium for the BETSU experiment which was flown 04 Mar 94 on board Shuttle STS-62. Ground testing had indicated satisfactory performance of the BETSU at the 120 Kelvin design temperature. However, questions remained as to the micro-gravity performance of this unit; potential deviations in ground (1 g) versus space flight (0 g) performance, and how the unit would operate in a realistic space environment undergoing cyclical operation. The preparations and rework performed on the BETSU unit, which failed initial flight qualification, give insight and lessons learned to successfully develop and qualify a space flight experiment.

Description: The solar power satellite concept which would make the sun's radiation available on earth as a source of energy, is discussed. Attention is given to the concept currently under evaluation in the USA, and also in Europe, though to a lesser extent. The advantages and problems associated with its adoption by the UK as a major source of electrical energy are discussed. The discussion covers topics such as sizing, reference system, and construction, costs, and problem areas.

Description: A technique has been developed for coating low-cost mullite-based refractory substrates with thin layers of solar cell quality silicon. The technique involves first carbonizing one surface of the ceramic and then contacting it with molten silicon. The silicon wets the carbonized surface and, under the proper thermal conditions, solidifies as a large-grained sheet. Solar cells produced from this composite silicon-on-ceramic material have exhibited total area conversion efficiencies of ten percent.

Description: The technological development of large, horizontal-axis wind turbines (100 kW-2500 kW) is surveyed with attention to prototype projects managed by NASA. Technical feasibility has been demonstrated in utility service for systems with a rated power of up to 200 kW and a rotor diameter of 125 ft (Mod-OA). Current designs of large wind turbines such as the 2500 kW Mod-2 are projected to be cost competitive for utility applications when produced in quantity, with capital costs of 600 to 700 dollars per kW (in 1977 dollars).

Description: Microscopic and electrical measurements were performed to explain the degradation mechanisms associated with the presence of titanium impurities in silicon. The measurements included X-ray topography, transmission electron microscopy, and deep level transient spectroscopy, before and after processing. The results indicated the presence of TiO2 precipitates, the density of which increased after phosphorus diffusion. A majority carrier trapping level was observed in the wafers before processing. It was concluded that 10% of the Ti in the N(+)/P silicon solar cells formed electrically active centers which caused degradation of the cell junction. 14% of the remaining Ti precipitated out as TiO2, forming electrically active defects, which also caused junction degradation.

Description: For efficiency and convenience the voltage applied to a Si solar cell is often fairly rapidly driven from zero to the open circuit value typically at a common rate of 1 V per millisecond. During this time the values of current are determined as a function of the instantaneous voltage thus producing an I-V characteristic. The present paper shows that the customary expressions for the current as a function of cell parameters still remain valid provided that the diffusion length in the expression for the dark current is changed from its steady state value L to the effective diffusion length L1 given by L1 = L(1 + qV/kT.tau) to the -1/2, where V is the ramp rate considered constant and tau is the lifetime of minority carriers. This result is true to a very good approximation provided that low level injection prevails.

Description: The transport velocity transformation method was used to analyze solar cell designs to determine optimum cell structures. It was found that low resistivity materials should be used up to the onset of Auger recombination; a properly designed three-layer structure permits base region approaching an ideal device in performance; and that higher resistivity front regions will need more sophisticated grid metallization structures than those used now. It was concluded that new features will provide idealized silicon cell structures yielding airmass 1 efficiencies in the 24-26.5% range, with real efficiencies near 22%.

Description: Control of resistivity in NASA inorganic-organic separators is achieved by incorporating small percentages of high surface area, fine-particle silica with other ingredients in the separator coating. The volume resistivity appears to be predictable from coating composition, that is, from the surface area of filler particles in the coating. The approach has been applied to two polymer-'plasticizer'-filler coating systems, where the filler content of each is below the generally acknowledged critical pigment volume concentration of the coating. Application of these coating systems to 0.0254 cm thick (10 mil) fuel-cell grade asbestos sheet produces inexpensive, flexible, microporous separators that perform at least as well as the original inorganic-organic concept, the Astropower separator.

Description: Two prototype solid-state phased array systems concepts for potential use in the Solar Power Satellite are described. In both concepts, the beam is centered on the rectenna by means of phase conjugation of a pilot signal emanating from the ground. Also discussed is on-going solid-state amplifier development.

Description: Solid state dc-rf converters offer potential improvements in reliability, mass and low voltage operation, provided that anticipated efficiencies in excess of 80 percent can be realized. Field effect transistors offer the greatest potential in the SPS frequency band at 2.45 GHz. To implement this approach it is essential that means be found to sum the power of many relatively low power solid state sources in a low-loss manner, and that means be provided to properly control the phase of the outputs of the large number of solid state sources required. To avoid the power combining losses associated with circuit hybrids it was proposed that the power from multiple solid state amplifiers be combined by direct coupling of each amplifier's output to the radiating antenna structure. The selected power-combining antenna consists of a unique printed (metalized) microstrip circuit on a ceramic type dielectric substrate which is backed by a shallow lightweight aluminum cavity which sums the power of four microwave sources. The antenna behaves like two one-half wavelength slot-line antennas coupled together via their common cavity structure.

Description: The possibilities of using solid state devices as part of the Satellite Solar Power System are discussed. Solid state advantages and disadvantages are presented along with two potential concepts for use of solid state in the system design.

Description: A method for the precision-forming of thin-walled, slotted-waveguide arrays was devised. Models were constructed with temporary tools and evaluated. The application of the method to the SPS requirements is discussed.

Description: The SPS transmitting array requires an architecture which will provide a low weight, high efficiency and high structural rigidity. As noted above, waveguide slot arrays constitute the most desirable option. Consequently, such an array has been chosen for the SPS. Waveguide slot arrays offer high efficiency, uniform illumination, are are fairly lighweight. Bandwidths of such arrays are narrow, typically 1/2-2%. Although this does not directly impact the SPS, which transmits power at a single frequency of 2.45 GHz, the narrow bandwidth does constrain the thermal and mechanical tolerances of the antenna. The purpose of this program is to better define the electronic aspects of an SPS specific waveguide slot array. The specific aims of the program are as follows: (1) To build a full-scale half-module, 10 stick, array, the design parameters for which are to be determined by analytical considerations tempered by experimental data on a single slotted radiating stick, (2) To experimentally evaluate the completed array with respect to antenna pattern, impedance and return loss, and (3) To measure swept transmission amplitude and phase to provide a data base for design of a receiving antenna.

Description: The SPS transmitting array requires an architecture which will provide a low weight, high efficiency and high structural rigidity. Waveguide slot arrays constitute the most desirable option. Consequently, such an array was chosen for the SPS. Waveguide slot arrays offer high efficiency, uniform illumination, and are fairly lightweight. Bandwidths of such arrays are narrow, typically 1/2-2%. Although this does not directly impact the SPS, which transmits power at a single frequency of 2.45 GHz, the narrow bandwidth does constrain the thermal and mechanical tolerances of the antenna. The purpose of this program is to better define the electronic aspects of an SPS specific waveguide slot array. The specific aims of the program are as follows: (1) To build a full-scale half-module, 10 stick, array, the design parameters for which are to be determined analytical considerations tempered by experimental data on a single slotted radiating stick, (2) To experimentally evaluate the completed array with respect to antenna pattern, impedance and return loss; and (3) To measure swept transmission amplitude and phase to provide a data base for design of a receiving antenna.

Description: The fundamental theory of MW antenna operation and basic array technology development status was used in the design of the 1-km diameter 5-Gw SPS microwave antenna. However, the aperture size and the high efficiency requirements make the MW antenna extremely complex. Studies show that the slotted waveguide array is one of the most efficient radiators for the antenna. Subsequent analyses show that the temperature interface between waveguides and dc-RF conversion tubes can cause severe thermal design problems on the array. An alternate design, the Resonant Cavity Radiator, is described here.

Description: The Solar Array Module Plasma Interactions Experiment (SAMPIE) is a flight experiment that flew on the Space Shuttle Columbia (STS-62) in March 1994, as part of the OAST-2 mission. The overall objective of SAMPIE was to determine the adverse environmental interactions within the space plasma of low earth orbit (LEO) on modern solar cells and space power system materials which are artificially biased to high positive and negative direct current (DC) voltages. The two environmental interactions of interest included high voltage arcing from the samples to the space plasma and parasitic current losses. High voltage arcing can cause physical damage to power system materials and shorten expected hardware life. parasitic current losses can reduce power system efficiency because electric currents generated in a power system drain into the surrounding plasma via parasitic resistance. The flight electronics included two programmable high voltage DC power supplies to bias the experiment samples, instruments to measure the surrounding plasma environment in the STS cargo bay, and the on-board data acquisition system (DAS). The DAS provided in-flight experiment control, data storage, and communications through the Goddard Space Flight Center (GSFC) Hitchhiker flight avionics to the GSFC Payload Operations Control Center (POCC). The DAS and the SAMPIE POCC computer systems were designed for telescience operations; this paper will focus on the experiences of the SAMPIE team regarding telescience development and operations from the GSFC POCC during STS-62. The SAMPIE conceptual development, hardware design, and system verification testing were accomplished at the NASA Lewis Research Center (LeRC). SAMPIE was developed under the In-Space Technology Experiment Program (IN-STEP), which sponsors NASA, industry, and university flight experiments designed to enable and enhance space flight technology. The IN-STEP Program is sponsored by the Office of Space Access and Technology (OSAT).

Description: AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In(1 - x)Ga(x)As(1 -y)Sb(y) alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x, y); and is closely lattice-matched to the GaSb substrate The use of the quaternary alloy, as opposed to a ternary alloy - such as, for example, InGaAs/InP - permits low bandgap devices optimized for 1000 to 1500 C thermal sources with, with at the time, near-exact lattice matching to the GaSb substrate. Lattice-matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. For bandgaps of 0.52 eV,Fo internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/sq cm is 0.220 volts and 0.260 V for current densities of 2 A/sq cm. Fill factors of 56% have also been measured. These preliminary results lead to the conclusion that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1000 to 1500 C source temperatures.

Description: InP p(+)nn(+) MOCVD solar cells were irradiated with 0.2 MeV and 10 MeV protons to a fluence of 10(exp 13)/sq cm. The degradation of power output, IV behavior, carrier concentration and defect concentration were observed at intermediate points throughout the irradiations. The 0.2 MeV proton irradiated solar cells suffered much greater and more rapid degradation in power output than those irradiated with 10 meV protons. The efficiency losses were accompanied by larger increases in the recombination currents in the 0.2 MeV proton irradiated solar cells. The low energy proton irradiations also had a larger impact on the series resistance of the solar cells. Despite the radiation induced damage, the carrier concentration in the base of the solar cells showed no reduction after 10 MeV or 0.2 MeV proton irradiations and even increased during irradiation with 0.2 MeV protons. In a DLTS study of the irradiated samples, the minority carrier defects H4 and H5 at E(v) + 0.33 and E(v) + 0.52 eV and the majority carrier defects E7 and E10 at E(c)- 0.39 and E(c)-0.74 eV, were observed. The defect introduction rates for the 0.2 MeV proton irradiations were about 20 times higher than for the 10 MeV proton irradiations. The defect E10, observed here after irradiation, has been shown to act as a donor in irradiated n-type InP and may be responsible for obscuring carrier removal. The results of this study are consistent with the much greater damage produced by low energy protons whose limited range causes them to stop in the active region of the solar cell.

Description: High open circuit voltage cell designs based on 0.1 Ohm cm p-type silicon were irradiated with 1 MeV electrons and their performance determined to fluences as high as 10 to the 15th power per sq cm. Of the three cell designs, radiation induced degradation was greatest in the high low emitter (HLE) cell. The diffused and ion implanted cells degraded approximately equally but less than the HLE cell. Degradation was greatest in an HLE cell exposed to X-rays before electron irradiation. The cell regions controlling both short circuit current and open circuit voltage degradation were defined in all three cell types. An increase in front surface recombination velocity accompanied time dependent degradation of an HLE cell after X-irradiation. It was speculated that this was indirectly due to a decrease in positive charge at the silicon oxide interface. Modifications aimed at reducing radiation induced degradation are proposed for all three cell types.

Description: Cells 2 cm x 2 cm were produced having an efficiency of 16% at 100 C and 12% at 200 C. They were superior to silicon cells under 1 MeV electron bombardment up to fluences in excess of 10 to the 15th power electron per sq cm, and to protons with an energy in excess of 1 MeV. The possibility of producing cells in quantity using a graphite wafer holder is mentioned.

Description: The performance of solar energy devices is adversely affected by surface soiling, and generally, the loss of performance increases with increases in the quantity of soil retained on their surfaces. To minimize performance losses caused by soiling, solar devices should not only be deployed in low soiling geographical areas, but employ surfaces or surfacing materials having low affinity for soil retention, maximum susceptibility to be naturally cleaned by wind, rain and snow, and to be readily cleanable by simple and inexpensive maintenance cleaning techniques. This article describes known and postulated mechanisms of soil retention on surfaces, and infers from these mechanisms that low soiling and easily cleanable surfaces should have low surface energy, and be hard, smooth, hydrophobic and chemically clean of sticky materials and water soluble salts.

Description: Developed to give a quick and accurate predictions HISPER, a simplification of the TRNSYS program, achieves its computational speed by not simulating detailed system operations or performing detailed load computations. In order to validate the HISPER computer for air systems the simulation was compared to the actual performance of an operational test site. Solar insolation, ambient temperature, water usage rate, and water main temperatures from the data tapes for an office building in Huntsville, Alabama were used as input. The HISPER program was found to predict the heating loads and solar fraction of the loads with errors of less than ten percent. Good correlation was found on both a seasonal basis and a monthly basis. Several parameters (such as infiltration rate and the outside ambient temperature above which heating is not required) were found to require careful selection for accurate simulation.

Description: New technologies for producing polysilicon are being developed to provide lower cost material for solar cells which convert sunlight into electricity. This article presents results for the BCL Process, which produces the solar-cell silicon by reduction of silicon tetrachloride with zinc vapor. Cost, sensitivity, and profitability analysis results are presented based on a preliminary process design of a plant to produce 1000 metric tons/year of silicon by the BCL Process. Profitability analysis indicates a sales price of $12.1-19.4 per kg of silicon (1980 dollars) at a 0-25 per cent DCF rate of return on investment after taxes. These results indicate good potential for meeting the goal of providing lower cost material for silicon solar cells.

Description: The motivations for considering solid state microwave power amplifiers for the solar power satellite transmitting antenna are the possibilities of greatly increased system reliability due to elimination of electron tube cathodes, a lower mass per unit power and transmitting array area due to the high power densities obtainable in semiconductors, and, probably, cost savings due to development of small hardware items that can be handled by individuals instead of organizations. In order to provide a fair assessment where we stand today with regard to solid state SPS technology, the design described here is close to that of the NASA/DOE reference and is implemented using today's solid state technology with only a small "push". The small push is raising the efficiency of DC-RF conversion from the .68 obtained by RCA in 1975 to somewhat over .8 of the solid state SPS. This is generally considered feasible by semiconductor industry representatives. Other solid state SPS configurations can yield somewhat better performance. However, these generally do not provide as fair a vehicle for comparison with the reference and usually also incorporate somewhat more advanced technologies.

Description: The measured performance characteristics of a rectenna array are reviewed and compared to the performance of a single element. It is shown that the performance may be extrapolated from the individual element to that of the collection of elements. Techniques for current and voltage combining were demonstrated. The array performance as a function of various operating parameters is characterized and techniques for overvoltage protection and automatic fault clearing in the array demonstrated. A method for detecting failed elements also exists. Instrumentation for deriving performance effectiveness is described. Measured harmonic radiation patterns and fundamental frequency scattered patterns for a low level illumination rectenna array are presented.

Description: Two micro aspects of rectenna design are discussed: evaluation of the degradation in net rectenna RF to DC conversion efficiency due to power density variations across the rectenna (power combining analysis) and design of Yagi-Uda receiving elements to reduce rectenna cost by decreasing the number of conversion circuits (directional receiving elements). The first of these involves resolving a fundamental question of efficiency potential with a rectenna, while the second involves a design modification with a large potential cost saving.

Description: The history of the development of the rectenna is first reviewed through its early conceptual and developmental phases in which the Air Force and Raytheon Company were primarily involved. The intermediate period of development which involved NASA, Jet Propulsion Laboratory, and Raytheon is then reviewed. Some selective aspects of the current SPS rectenna development are examined.

Description: Progress in adapting the crossed-field directional amplifier to the SPS is reviewed. Special emphasis is given to (1) recent developments in controlling the phase and amplitude of the microwave power output, (2) a received architecture for its placement in the subarray, and (3) recent developments in the critical pivotal areas of noise, potential cathode life, and efficiency.

Description: Due to complexity of the program which used a hydrodynamic, axially and radially deformable disk-ring model and the resulting long computing time only the output gap was investigated. Results from independent studies were used to initiate the starting conditions for the electrons and the RF voltage using our program. Although this method of computation is less exact than processing the entire klystron interaction in 3-Dimensions it is shown that, for a confined flow focused throughout the penultimate cavity, radial velocities remain very small and the beam is highly laminar. It is concluded that possible errors resulting from treating only the output cavity in 3-D would remain small.

Description: The most likely compact configuration to realize both high efficiency and high gain is a 5-6 cavity design focused by an electromagnet. An outline of a potential klystron configuration is given. The selected power output of 70 kW CW resulted from a maximum assumed operating voltage of 40 kV. The basic klystron efficiency cannot be expected to exceed 70-75% without collector depression. Although impressive gains were achieved in raising the basic efficiency from 50% to 70% or so with a multi-stage collector, the estimated efficiency improvement due to 5-stage collector at the 75% level is only about 8% resulting in an overall efficiency of about 83%.

Description: The operation of an active retrodirective array (ARA) in an ionospheric environment (that is either stationary or slowly-varying) was examined. The restrictions imposed on the pilot-signal structure as a result of such operation are analyzed. A 3-tone pilot beam system is defined which first estimates the total electron content along paths of interest and then utilizes this information to aid the phase conjugator so that correct beam pointing can be achieved.

Description: A simulator which generates and transmits a beam of audible sound energy mathematically similar to the SPS power beam is described. The simulator provides a laboratory means for analysis of ground based closed loop SPS phase control and of ionospheric effects on the SPS microwave power beam.

Description: To properly point and form the SPS microwave power beam, the outputs of the power amplifiers in the transmitting array must be phased in a specific and coherent fashion. The purpose of the SPB phase control system is to bring this about reliably. A number of different phase control schemes were studied. The one selected for the SPS baseline system is a retrodirective CW phase that is distributed via fiber optics. The basis of this selection is relative technical simplicity and requisite assurance of success.

Description: A system for focusing and pointing the SPS power beam is discussed. The system is ground based and closed loop. One receiving antenna is required on Earth. A conventional uplink data channel transmits an 8-bit phase error correlation back to the SPS for sequential calibration of each power module. Beam pointing resolution is better than 140 meters at the Rectenna.

Description: Fiber optic technology was selected in the SPS baseline design to transmit a stable phase reference throughout the microwave array. Over a hundred thousand microwave modules are electronically steered by the phase reference signal to form the power beam at the ground receiving station. The initially selected IF distribution frequency of the phase reference signal was set at 980 MHz or a submultiple of it. Fiber optics offers some significant advantages in view of the SPS application. Optical transmission is highly immume to EMI/RFI, which is expected to be severe when considering the low distribution power. In addition, there will be savings in both mass, physical size, and potentially in cost.

Description: A power density level of 23 mW/sq cm is presented as a design specification based on theoretical calculations of a threshold for microwave ionosphere nonlinear interaction (thermal runaway). For comparable power densities, enhanced electron heating is observed to change the electron temperature by a factor of two or three, but not by an order of magnitude.

Description: The computer programming efforts were directed primarily to beam pattern analysis. The computer programs used for simulation provide: verification of the reference design; definition of feasible departures such as quantized distributions; the study of far-out sidelobe roll-off characteristics; the analysis of errors and failures; illumination function analysis to develop beam patterns for efficient collection; and beam shaping synthesis to meet environmental constraints.

Description: In order to maximize the efficiency of the microwave power transmission system (MPTS), the surface of the array antenna must be extremely flat, which is difficult to achieve using passive techniques over the 1 km dimensions of the array. In order to achieve and maintain this required flatness, a rotating laser beam used for leveling applications on Earth was utilized as a reference system. A photoconductive sensor with a reflective collecting surface was used to determine the displacement and polarity of any misalignment and automatically engage a stepping motor to drive a variable-length mechanism to make the necessary corrections. Once aligned, little power is dissipated since a nulling bridge circuit that centers on the beam is used, an important alignment feature since even laser beams broaden considerably at 1 km distances.

Description: System sizing is discussed in terms of reduced power levels and antenna diameters smaller than 1 km. The microwave transmission efficiency for smaller SPS systems was investigated. Startup and shutdown operations were examined with emphasis on solar eclipse effects on the solar arrays. The antennas and subarray mechanical alignments are also discussed.

Description: The feasibility of using solid state elements in the solar power satellite transmitter system is addressed. Recommendations are given concerning device types, the antenna modules, and the overall antenna system. The development of a solid state amplifier based on GaAs field effect transistor devices is also described.

Description: Charge control studies on nickel hydrogen cells are discussed. Characterization test data for the cells are presented in graphical form. The test areas covered were capacity versus temperature, ampere-hour cycling efficiency, and the charge method which involved voltage level with current limiting.

Description: High voltage power systems in space will interact with the space plasma in a variety of ways. One of these, snapover, is characterized by sudden enlargement of the current collection area across normally insulating surfaces generating enhanced electron current collection. Power drain on solar array power systems results from this enhanced current collection. Optical observations of the snapover phenomena in the laboratory indicates a functional relation between glow area and bia potential as a consequence of the fold/cusp bifurcation in chaos theory. Successful characterizations of snapover as a chaotic phenomena may provide a means of snapover prevention and control through chaotic synchronization.

Description: The PASP-Plus (Photovoltaic Array Space Power Plus Diagnostics) program is a photovoltaic experiment which is flying on the Air Force satellite APEX (Advanced Photovoltaic and Electronics Experiments). The satellite was launched on August 3, 1994 with a Pegasus low-cost launch vehicle. There are two other small experiments on APEX, however PASP-Plus is the largest, uses the most power, and accounts for the largest portion of the data requirements. The satellite is in an elliptical orbit with an apogee of 2552 km and a perigee of 363 km. The inclination is 70 degrees. The PASP-Plus experiment consists of twelve photovoltaic panels containing a total of sixteen separate cell modules. Two of the modules are concentrator modules, while the rest are planar. There are several different solar cell types flying on PASP-Plus including silicon, GaAs on germanium substrates, InP, amorphous silicon, and three multi-bandgap cells. The purpose of this paper is to present some of the data from the first year of the PASP-Plus flight. Cell performance and module thermal performance will be discussed as well as other relevant data.

Description: The Astro Edge solar array is a new and innovative reflective low concentrator power generating system which has been selected for the CTA Incorporate/Lockheed Martin Clark spacecraft under the NASA Small Spacecraft Technology Initiative (SSTI) program. In support of this program, Astro Aerospace Corporation has produced one qualification and two flight solar array wings to support a July 1996 launch. The Astro Edge solar array was selected as a new technology to benefit future NASA, military and commercial missions by providing high specific power, high deployed stiffness, low stowed volume, low risk, and cost reduction features which meet the agency's 'better, faster, cheaper' goals. This novel array accounts for five of the thirty-six advanced technologies which the Clark spacecraft will demonstrate. A brief SSTI Astro Edge solar array program overview is presented. Completed qualification and acceptance testing is discussed. Finally, the major discriminators which make the Astro Edge solar array 'better, faster, cheaper' technology are provided.

Description: Gallium phosphide (GaP) energy converters may be successfully deployed to provide new mission capabilities for spacecraft. Betavoltaic power supplies based on the conversion of tritium beta decay to electricity using GaP energy converters can supply long term low-level power with high reliability. High temperature solar cells, also based on GaP, can be used in inward-bound missions greatly reducing the need for thermal dissipation. Results are presented for GaP direct conversion devices powered by Ni-63 and compared to the conversion of light emitted by tritiarated phosphors. Leakage currents as low as 1.2 x 10(exp -17) A/sq cm have been measured and the temperature dependence of the reverse saturation current is found to have ideal behavior. Temperature dependent IV, QE, R(sub sh), and V(sub oc) results are also presented. These data are used to predict the high-temperature solar cell and betacell performance of GaP devices and suggest appropriate applications for the deployment of this technology.

Description: Literature on solar array angle of incidence corrections was found to be sparse and contained no tabular data for support. This lack along with recent data on 27 GaAs/Ge 4 cm by 4 cm cells initiated the analysis presented in this paper. The literature cites seven possible contributors to angle of incidence effects: cosine, optical front surface, edge, shadowing, UV degradation, particulate soiling, and background color. Only the first three are covered in this paper due to lack of sufficient data. The cosine correction is commonly used but is not sufficient when the incident angle is large. Fresnel reflection calculations require knowledge of the index of refraction of the coverglass front surface. The absolute index of refraction for the coverglass front surface was not known nor was it measured due to lack of funds. However, a value for the index of refraction was obtained by examining how the prediction errors varied with different assumed indices and selecting the best fit to the set of measured values. Corrections using front surface Fresnel reflection along with the cosine correction give very good predictive results when compared to measured data, except there is a definite trend away from predicted values at the larger incident angles. This trend could be related to edge effects and is illustrated by a use of a box plot of the errors and by plotting the deviation of the mean against incidence angle. The trend is for larger deviations at larger incidence angles and there may be a fourth order effect involved in the trend. A chi-squared test was used to determine if the measurement errors were normally distributed. At 10 degrees the chi-squared test failed, probably due to the very small numbers involved or a bias from the measurement procedure. All other angles showed a good fit to the normal distribution with increasing goodness-of-fit as the angles increased which reinforces the very small numbers hypothesis. The contributed data only went to 65 degrees from normal which prevented any firm conclusions about extreme angle effects although a trend in the right direction was seen. Measurement errors were estimated and found to be consistent with the conclusions that were drawn. A controlled experiment using coverglasses and cells from the same lots and extending to larger incidence angles would probably lead to further insight into the subject area.

Description: Past NASA missions to Mars, Jupiter, and the outer planets were powered by radioisotope thermal generators (RTG's). Although these devices proved to be reliable, their high cost and highly toxic radioactive heat source has made them far less desirable for future planetary missions. This has resulted in a renewed search for alternate energy sources, some of them being photovoltaic (PV) and thermophotovoltaic (TPV). Both of these alternate energy sources convert light/thermal energy directly into electricity. In order to create a viable PV and TPV data base for planetary mission planners and cell designers, we have compiled low temperature low intensity (LILT) I-V data on single junction and multi-junction high efficiency solar cells. The cells tested here represent the latest photovoltaic technology. Using this LILT data to calculate dI(sub SC)/dT, dV(sub OC)/dT, dFF/dT, and also as a function of intensity, an accurate prediction of cell performance under the AMO spectrum can be determined. When combined with QUantum efficiency at Low Temperature (QULT) data, one can further enhance the data by adding spectral variations to the measurements. This paper presents an overview of LILT measurements and is only intended to be used as a guideline for material selection and performance predictions. As single junction and multi-junction cell technologies emerge, new test data must be collected. Cell materials included are Si, GaAs/Ge, GainP/GaAs/Ge, InP, InGaAs/InP, InP/InGaAs/InP, and GainP. Temperatures range as low as -175 C and intensities range from 1 sun to .02 suns.

Description: When determining the best solar cell technology for a particular space flight mission, accurate prediction of solar cell performance in a space radiation environment is essential. The current methodology used to make such predictions requires extensive experimental data measured under both electron and proton irradiation. Due to the rising cost of accelerators and irradiation facilities, such extensive data sets are expensive to obtain. Moreover, with the rapid development of novel cell designs, the necessary data are often not available. Therefore, a method for predicting cell degradation based on limited data is needed. Such a method has been developed at the Naval Research Laboratory based on damage correlation using 'displacement damage dose' which is the product of the non-ionizing energy loss (NIEL) and the particle fluence. Displacement damage dose is a direct analog of the ionization dose used to correlate the effects of ionizing radiations. In this method, the performance of a solar cell in a complex radiation environment can be predicted from data on a single proton energy and two electron energies, or one proton energy, one electron energy, and Co(exp 60) gammas. This method has been used to accurately predict the extensive data set measured by Anspaugh on GaAs/Ge solar cells under a wide range of electron and proton energies. In this paper, the method is applied to InP solar cells using data measured under 1 MeV electron and 3 MeV proton irradiations, and the calculations are shown to agree well with the measured data. In addition to providing accurate damage predictions, this method also provides a basis for quantitative comparisons of the performance of different cell technologies. The performance of the present InP cells is compared to that published for GaAs/Ge cells. The results show InP to be inherently more resistant to displacement energy deposition than GaAs/Ge.

Description: Advanced materials play an important role in electrochemical energy devices such as batteries, fuel cells, and electrochemical capacitors. They are being used as both electrodes and electrolytes. Sol-gel processing is a versatile solution technique used in fabrication of ceramic materials with tailored stoichiometry, microstructure, and properties. The application of sol-gel processing in the fabrication of advanced electrochemical energy materials will be presented. The potentials of sol-gel derived materials for electrochemical energy applications will be discussed along with some examples of successful applications. Sol-gel derived metal oxide electrode materials such as V2O5 cathodes have been demonstrated in solid-slate thin film batteries; solid electrolytes materials such as beta-alumina for advanced secondary batteries had been prepared by the sol-gel technique long time ago; and high surface area transition metal compounds for capacitive energy storage applications can also be synthesized with this method.

Description: The experimental performance of a multijunction monolithic In(0.53)Ga(0. 47)As power converter under blackbody irradiation is reported. Eight InGaAs PN junctions grown epitaxially on a semi-insulating wafer were monolithically integrated in series to boost the approximately 0.4 V photovoltage per typical InGaAs junction to over 3 volts for the 1 sq cm chip. This chip was originally designed and characterized for free-space 1.3 micron laser power beaming. This is the first report of such a multijunction TPV. This is not a traditional tandem cell in which the junctions are stacked vertically. The junctions are each about 1mm long by 1 cm wide and are laterally connected across the 1 sq cm device area. This multijunction design has the potential for lower I(sup 2)R power loss since the smaller PN junction area limits the current to one-eighth that of the equivalent surface area. In essence, the current is traded for voltage to avoid the I(sup 2)R loss, analogous to the way power utilities avoid I(sup 2)P loss in high-tension power lines, by transforming the high current, low voltage generated at a power plant into a high voltage at a low current before transmitting the power over great distances.

Description: Progress is reported with respect to the development of ultra-lightweight, high performance, thin, light trapped GaAs solar cells for advanced space power systems. Conversion efficiencies of over 17.7% have been demonstrated for a 3 micron thick, 1 sq cm silicone bonded solar cell. This results in a specific power of over 1020 W/kg. Device parameters were 1.011 V open circuit voltage, 80% fill factor, and a short-circuit current density of 29.5 mA/sq cm . In addition to silicone bonding, the use of electrostatic bonding to attach the coverglass support to the front surface enables an ultra-thin, all back contact design that survives processing temperatures greater than 750 C. This also results in a 10% reduction of the cell weight for a potential specific power of 1270 W/kg. All back contact, ultra-thin, electrostatically bonded GaAs solar cell prototypes have been completed demonstrating an open circuit voltage of 1 volt for a cell base thickness of 1 micron with a 0.5 micron emitter. This technology will result in a revolutionary improvement in survivability, performance, and manufacturability of lightweight GaAs solar cell products for future Earth-orbiting science and space exploration missions. The thin, electrostatically bonded, all back contact GaAs device technology has multiple uses for specialty high performance solar cells and other optoelectronic devices.

Description: Multi-junction solar cells are attractive for space applications because they can be designed to convert a larger fraction of AMO into electrical power at a lower cost than single-junction cells. The performance of multi-junction cells is much more sensitive to the spectral irradiance of the illuminating source than single-junction cells. The design of high efficiency multi-junction cells for space applications requires matching the optoelectronic properties of the junctions to AMO spectral irradiance. Unlike single-junction cells, it is not possible to carry out quantum efficiency measurements using only a monochromatic probe beam and determining the cell short-circuit current assuming linearity of the quantum efficiency. Additionally, current-voltage characteristics can not be calculated from measurements under non-AMO light sources using spectral-correction methods. There are reports in the literature on characterizing the performance of multi junction cells by measuring and convoluting the quantum efficiency of each junction with the spectral irradiance; the technique is of limited value for the characterization of cell performance under AMO power-generating conditions. We report the results of research to develop instrumentation and techniques for characterizing multi junction solar cells for space . An integrated system is described which consists of a standard lamp, spectral radiometer, dual-source solar simulator, and personal computer based current-voltage and quantum efficiency equipment. The spectral radiometer is calibrated regularly using the tungsten-halogen standard lamp which has a calibration based on NIST scales. The solar simulator produces the light bias beam for current-voltage and cell quantum efficiency measurements. The calibrated spectral radiometer is used to 'fit' the spectral irradiance of the dual-source solar simulator to WRL AMO data. The quantum efficiency apparatus includes a monochromatic probe beam for measuring the absolute cell quantum efficiency at various voltage biases, including the voltage bias corresponding to the maximum-power point under AMO light bias. The details of the procedures to 'fit' the spectral irradiance to AMO will be discussed. An assessment of the role of the accuracy of the 'fit' of the spectral irradiance and probe beam intensity on measured cell characteristics will be presented. quantum efficiencies were measured with both spectral light bias and AMO light bias; the measurements show striking differences. Spectral irradiances were convoluted with cell quantum efficiencies to calculate cell currents as function of voltage. The calculated currents compare with measured currents at the 1% level. Measurements on a variety of multi-junction cells will be presented. The dependence of defects in junctions on cell quantum efficiencies measured under light and voltage bias conditions will be presented. Comments will be made on issues related to standards for calibration, and limitations of the instrumentation and techniques. Expeditious development of multi-junction solar cell technology for space presents challenges for cell characterization in the laboratory.

Description: It is well known that the behavior of III-V compound based solar cells is largely controlled by their surface, since the majority of light generated carriers (63% for GaAs and 79% for InP) are created within 0.2 mu m of the surface of the illuminated cell. Consequently, the always observed high surface recombination velocity (SRV) on these cells is a serious limiting factor for their high efficiency performance, especially for those with p-n junction made by either thermal diffusion or ion implantation. A good surface passivation layer, ideally a grown oxide as opposed to a deposited one, will cause a significant reduction in the SRV without adding interface problems, thus improving the performance of III-V compound based solar cells. Another significant benefit to the overall performance of the solar cells can be achieved by a substantial reduction of their large surface optical reflection by the use of a well designed antireflection (AR) coating. In this paper, we demonstrate the effectiveness of using a chemically grown thermally and chemically stable oxide, not only for surface passivation but also as an integral part of a 3-layer AR coating for thermally diffused p+n InP solar cells. A phosphorus-rich interfacial oxide, In(PO3)3, is grown at the surface of the p+ emitter using an etchant based on HNO3, o-H3PO4 and H2O2. This oxide has the unique properties of passivating the surface as well as serving as an efficient antireflective layer yielding a measured record high AMO open-circuit voltage of 890.3 mV on a thermally diffused InP(Cd,S) solar cell. Unlike conventional single layer AR coatings such as ZnS, Sb2O3, SiO or double layer AR coatings such as ZnS/MgF2 deposited by e-beam or resistive evaporation, this oxide preserves the stoichiometry of the InP surface. We show that it is possible to design a three-layer AR coating for a thermally diffused InP solar cell using the In(PO3)3 grown oxide as the first layer and Al2O3 and MgF2 as the second and third layers respectively, so as to yield an overall theoretical reflectance of less than 2%. Since chemical oxides are readily grown on III-V semiconductors materials, the technique of using the grown oxide layer to both passivate the surface as well as serve as the first of a multilayer AR coating should work well for all III-V compound-based solar cells.

Description: High-efficiency, heteroepitaxial (HE) InP solar cells, grown on GaAs, Si or Ge substrates, are desirable for their mechanically strong, light-weight and radiation-hard properties. However, dislocations, caused by lattice mismatch, currently limit the performance of the HE cells. This occurs through shunting paths across the active photovoltaic junction and by the formation of deep levels. In previous work we have demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of dislocations in specially designed HE InP test structures. In this work, we present the first report of successful hydrogen passivation in actual InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in HE n+n InP cell structures from as-grown values of approximately 10(exp 15)/cm(exp -3), down to 1-2 x 10(exp 13)/cm(exp -3). The deep levels in the p-type base region of the cell structure match those of our earlier p-type test structures, which were attributed to dislocations or related point defect complexes. All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. I-V analysis indicated a subsequent approximately 10 fold decrease in reverse leakage current at -1 volt reverse bias, and no change in the forward biased series resistance of the cell structure which indicates complete reactivation of the n+ emitter. Furthermore, electrochemical C-V profiling indicates greatly enhanced passivation depth, and hence hydrogen diffusion, for heteroepitaxial structures when compared with identically processed homoepitaxial n+p InP structures. An analysis of hydrogen diffusion in dislocated InP will be discussed, along with comparisons of passivation effectiveness for n+p versus p+n heteroepitaxial cell configurations. Preliminary hydrogen-passivated HE InP cell results will also be presented.

Description: The first long-term (3000 hours) UV testing of unirradiated and 1 MeV electron-irradiated GaAs solar cells, with multilayer-coated coverslides to reduce solar array operating temperature, has produced some unexpected and important results. Two results, independent of the coverslide coatings, are of particular importance in terms of the predictability of GaAs solar-array lifetime in space: ( 1) The GaAs/Ge solar cells used for this series of tests displayed a much higher radiation degradation than that predicted based on JPL Solar Cell Radiation Handbook data. Covered cells degraded more in Isc than did bare cells. Short-term illumination at 60 C did not produce significant recovery (-1%) of the radiation damage. (2) However, electron radiation damage to these GaAs solar celIs anneals at 40 C when exposed to approximately 1 sun AM0 UV light sources for extended periods. The effect appears to be roughly linear with time (-1% of lsc per 1000 UVSH), is large (greater than or equal to 3%), and has not yet saturated (at 3000 hours). This photo-recovery of radiation damage to GaAs solar cells is a new effect and potentially important to the spacecraft community. The figure compares the effects of extended UV on irradiated and unirradiated GaAs solar cells with INTELSAT-6 Si cells. The effect and its generality, the extent of and conditions for photo-recovery, and the implications of such recovery for missions in radiation environments have not yet been determined.

Description: This proprietary technology is based on AstroPower's electrostatic bonding and innovative silicon solar cell processing techniques. Electrostatic bonding allows silicon wafers to be permanently attached to a thermally matched glass superstrate and then thinned to final thicknesses less than 25 micron. These devices are based on the features of a thin, light-trapping silicon solar cell: high voltage, high current, light weight (high specific power) and high radiation resistance. Monolithic interconnection allows the fabrication costs on a per watt basis to be roughly independent of the array size, power or voltage, therefore, the cost effectiveness to manufacture solar cell arrays with output powers ranging from milliwatts up to four watts and output voltages ranging from 5 to 500 volts will be similar. This compares favorably to conventionally manufactured, commercial solar cell arrays, where handling of small parts is very labor intensive and costly. In this way, a wide variety of product specifications can be met using the same fabrication techniques. Prototype solar cells have demonstrated efficiencies greater than 11%. An open-circuit voltage of 5.4 volts, fill factor of 65%, and short-circuit current density of 28 mA/sq cm at AM1.5 illumination are typical. Future efforts are being directed to optimization of the solar cell operating characteristics as well as production processing. The monolithic approach has a number of inherent advantages, including reduced cost per interconnect and increased reliability of array connections. These features make this proprietary technology an excellent candidate for a large number of consumer products.

Description: As part of a continuing program to determine the space radiation resistance of InP/ln(0.53)Ga(0.47)As tandem solar cells, n/p In(0.53)Ga(0. 47)As solar cells fabricated by RTI were irradiated with 1 MeV electrons and with 3 MeV protons. The cells were grown with a 3 micron n-lnP window layer to mimic the top cell in the tandem cell configuration for both AMO solar absorption and radiation effects. The results have been plotted against 'displacement damage dose' which is the product of the nonionizing energy loss (NIEL) and the particle fluence. A characteristic radiation damage curve can then be obtained for predicting the effect of all particles and energies. AMO, 1 sun solar illumination IV measurements were performed on the irradiated InGaAs solar cells and a characteristic radiation degradation curve was obtained using the solar cell conversion efficiency as the model parameter. Also presented are data comparing the radiation response of both n/p and p/n (fabricated by NREL) InGaAs solar cells as a function of base doping concentration. For the solar cell efficiency, the radiation degradation was found to be independent of the sample polarity for the same base doping concentration.

Description: Photovoltaic linear concentrator arrays can benefit from high performance solar cell technologies being developed at AstroPower. Specifically, these are the integration of thin GaAs solar cell and epitaxial lateral overgrowth technologies with the application of monolithically interconnected solar cell (MISC) techniques. This MISC array has several advantages which make it ideal for space concentrator systems. These are high system voltage, reliable low cost monolithically formed interconnections, design flexibility, costs that are independent of array voltage, and low power loss from shorts, opens, and impact damage. This concentrator solar cell will incorporate the benefits of light trapping by growing the device active layers over a low-cost, simple, PECVD deposited silicon/silicon dioxide Bragg reflector. The high voltage-low current output results in minimal 12R losses while properly designing the device allows for minimal shading and resistance losses. It is possible to obtain open circuit voltages as high as 67 volts/cm of solar cell length with existing technology. The projected power density for the high performance device is 5 kW/m for an AMO efficiency of 26% at 1 5X. Concentrator solar cell arrays are necessary to meet the power requirements of specific mission platforms and can supply high voltage power for electric propulsion systems. It is anticipated that the high efficiency, GaAs monolithically interconnected linear concentrator solar cell array will enjoy widespread application for space based solar power needs. Additional applications include remote man-portable or ultra-light unmanned air vehicle (UAV) power supplies where high power per area, high radiation hardness and a high bus voltage or low bus current are important. The monolithic approach has a number of inherent advantages, including reduced cost per interconnect and increased reliability of array connections. There is also a high potential for a large number of consumer products. Dual-use applications can include battery chargers and remote power supplies for consumer electronics products such as portable telephones/beepers, portable radios, CD players, dashboard radar detectors, remote walkway lighting, etc.

Description: Indium phosphide (InP) solar cells are being made on silicon (Si) wafers (InP/Si) to take advantage of both the radiation-hardness properties of the InP solar cell and the light weight and low cost of Si wafers compared to InP or germanium (Ge) wafers. The InP/Si cell application is for long duration and/or high radiation orbit space missions. InP/Si cells have higher absolute efficiency after a high radiation dose than gallium arsenide (GaAs) or silicon (Si) solar cells. In this work, base electron diffusion lengths in the N/P cell are extracted from measured AM0 short-circuit photocurrent at various irradiation levels out to an equivalent 1 MeV fluence of 1017 1 MeV electrons/sq cm for a 1 sq cm 12% BOL InP/Si cell. These values are then checked for consistency by comparing measured Voc data with a theoretical Voc model that includes a dark current term that depends on the extracted diffusion lengths.

Description: An analysis embodied in a PC computer program is presented which quantitatively demonstrates how the availability of radiation hard solar cells can minimize the cost of a global satellite communication system. The chief distinction between the currently proposed systems, such as Iridium Odyssey and Ellipsat, is the number of satellites employed and their operating altitudes. Analysis of the major costs associated with implementing these systems shows that operation within the earth's radiation belts can reduce the total system cost by as much as a factor of two, so long as radiation hard components including solar cells, can be used. A detailed evaluation of several types of planar solar cells is given, including commercially available Si and GaAs/Ge cells, and InP/Si cells which are under development. The computer program calculates the end of life (EOL) power density of solar arrays taking into account the cell geometry, coverglass thickness, support frame, electrical interconnects, etc. The EOL power density can be determined for any altitude from low earth orbit (LEO) to geosynchronous (GEO) and for equatorial to polar planes of inclination. The mission duration can be varied over the entire range planned for the proposed satellite systems. An algorithm is included in the program for determining the degradation of cell efficiency for different cell technologies due to proton and electron irradiation. The program can be used to determine the optimum configuration for any cell technology for a particular orbit and for a specified mission life. Several examples of applying the program are presented, in which it is shown that the EOL power density of different technologies can vary by an order of magnitude for certain missions. Therefore, although a relatively radiation soft technology can be made to provide the required EOL power by simply increasing the size of the array, the impact on the total system budget could be unacceptable, due to increased launch and hardware costs. In aggregate these factors can account for more than a 10% increase in the total system cost. Since the estimated total costs of proposed global coverage systems range from $1 Billion to $9 Billion, the availability of radiation hard solar cells could make a decisive difference in the selection of a particular constellation architecture.

Description: Multi-junction (MJ), gallium arsenide (GaAs), and silicon (Si) solar cells have respective test efficiencies of approximately 24%, 18.5% and 14.8%. Multi-junction and gallium arsenide solar cells weigh more than silicon solar cells and cost approximately five times as much per unit power at the cell level. A straw man trade is performed for the TRMM spacecraft to determine which of these cell types would have offered an overall performance and price advantage to the spacecraft. A straw man trade is also performed for the multi-junction cells under the assumption that they will cost over ten times that of silicon cells at the cell level. The trade shows that the TRMM project, less the cost of the instrument, ground systems and mission operations, would spend approximately $552 thousand dollars per kilogram to launch and service science in the case of the spacecraft equipped with silicon solar cells. If these cells are changed out for gallium arsenide solar cells, an additional 31 kilograms of science can be launched and serviced at a price of approximately $90 thousand per kilogram. The weight reduction is shown to derive from the smaller area of the array and hence reductions in the weight of the array substrate and supporting structure. If the silicon solar cells are changed out for multi-junction solar cells, an additional 45 kilograms of science above the silicon base line can be launched and serviced at a price of approximately $58 thousand per kilogram. The trade shows that even if the multi-junction arrays are priced over ten times that of silicon cells, a price that is much higher than projected, that the additional 45 kilograms of science are launched and serviced at $182 thousand per kilogram. This is still much less than original $552 thousand per kilogram to launch and service the science. Data and qualitative factors are presented to show that these figures are subject to a great deal of uncertainty. Nonetheless, the benefit of the higher efficiency solar cells for TRMM is far greater than the uncertainties in the analysis.

Description: In this paper we report the successful fabrication of large area, monolithic triple junction, n on p, GaInP2/GaAs/Ge cells. The highest open circuit voltage and cell efficiency (cell area: 4.078 sq cm) were measured at 2.573 V and 23.3%, respectively, under 1 sun, AMO illumination. To our knowledge, this is the highest single crystal, monolithic, two terminal triple junction cell efficiency demonstrated. In addition, excellent uniformity across a 3 inch diameter Ge substrates has also been achieved. An average cell efficiency of 22.8% across the 3 inch diameter wafer has been measured. We have also successfully fabricated welded cell-interconnect-cover (CIC) assemblies using these triple junction devices. The highest CIC efficiency was 23.2% (bare cell efficiency was 23.3%). The average efficiency for 25 CICs was 21.8%, which is very comparable to the 22.0% average bare cell efficiency before they were fabricated into the CICs. Finally, we have measured temperature coefficient and 1 MeV electron irradiation data. These will be presented in the paper.

Description: Energy storage and production in space requires rugged, reliable hardware which minimizes weight, volume, and maintenance while maximizing power output and usable energy storage. These systems generally consist of photovoltaic solar arrays which operate during sunlight cycles to provide system power and regenerate fuel (hydrogen) via water electrolysis; during dark cycles, hydrogen is converted by the fuel cell into system. The currently preferred configuration uses two separate systems (fuel cell and electrolyzer) in conjunction with photovoltaic cells. Fuel cell/electrolyzer system simplicity, reliability, and power-to-weight and power-to-volume ratios could be greatly improved if both power production (fuel cell) and power storage (electrolysis) functions can be integrated into a single unit. The Technology Management, Inc. (TMI), solid oxide fuel cell-based system offers the opportunity to both integrate fuel cell and electrolyzer functions into one unit and potentially simplify system requirements. Based an the TMI solid oxide fuel cell (SOPC) technology, the TMI integrated fuel cell/electrolyzer utilizes innovative gas storage and operational concepts and operates like a rechargeable 'hydrogen-oxygen battery'. Preliminary research has been completed on improved H2/H2O electrode (SOFC anode/electrolyzer cathode) materials for solid oxide, regenerative fuel cells. Improved H2/H2O electrode materials showed improved cell performance in both fuel cell and electrolysis modes in reversible cell tests. ln reversible fuel cell/electrolyzer mode, regenerative fuel cell efficiencies (ratio of power out (fuel cell mode) to power in (electrolyzer model)) improved from 50 percent (using conventional electrode materials) to over 80 percent. The new materials will allow the TMI SOFC system to operate as both the electrolyzer and fuel cell in a single unit. Preliminary system designs have also been developed which indicate the technical feasibility of using the TMI SOFC technology for space applications with high energy storage efficiencies and high specific energy. Development of small space systems would also have potential dual-use, terrestrial applications.

Description: A difficulty encountered in designing a unitized regenerative proton exchange membrane (PEM) fuel cell lies in the incompatibility of electrode structures and electrocatalyst materials optimized for either of the two functions (fuel cell or electrolyzer) with the needs of the other function. This difficulty is compounded in previous regenerative fuel cell designs by the fact that water, which is needed for proton conduction in the PEM during both modes of operation, is the reactant supplied to the anode in the electrolyzer mode of operation and the product formed at the cathode in the fuel cell mode. Drawbacks associated with existing regenerative fuel cells have been addressed in work performed at Lynntech. In a first innovation, electrodes function either as oxidation electrodes (hydrogen ionization or oxygen evolution) or as reduction electrodes (oxygen reduction or hydrogen evolution) in the fuel cell and electrolyzer modes, respectively. Control of liquid water within the regenerative fuel cell has been brought about by a second innovation. A novel PEM has been developed with internal channels that permit the direct access of water along the length of the membrane. Lateral diffusion of water along the polymer chains of the PEM provides the water needed at electrode/PEM interfaces. Fabrication of the novel unitized regenerative fuel cell and results obtained on testing it will be presented.

Description: The Lincoln Laboratory n(+)/p/p(+) GaAs shallow homojunction cell structure was successfully demonstrated on 2 by 2 cm GaAs substrates. Air mass zero efficiencies of the seven cells produced to date range from 13.6 to 15.6 percent. Current voltage (I-V) characteristics, spectral response, and measurements were made on all seven cells. Preliminary analysis of 1 MeV electron radiation damage data indicate excellent radiation resistance for these cells.

Description: Organometallic sources are available for all the III-V elements and a variety of dopants; thus it is possible to use the technique to grow a wide variety of semiconductor compounds. AlGaAsSb and AlGaInAs alloys for multijunction monolithic solar cells were grown by OM-VPE. While the effort concentrated on terrestrial applications, the success of OM-VPE grown GaAs/AlGaAs concentrator solar cells (23% at 400 suns) demonstrates that OM-VPE is suitable for growing high efficiency solar cells in large quantities for space applications. In addition, OM-VPE offers the potential for substantial cost reduction of photovoltaic devices with scale up and automation and due to high process yield from reproducible, uniform epitaxial growths with excellent surface morphology.

Description: Superlattice layers are effective in decreasing the density of dislocations in lattice mismatched heterostructures at least four orders of magnitude. Hence it was proposed to utilize this feature of superlattices to alleviate the problems due to misfit dislocations generated in the regions between two or more photovoltaic collecting junctions. A further advantage is that the possibility is presented for using silicon as a low cost substrate as well as for the low band gap junction. In the test case, a silicon low gap cell was connected to a GaAs.7P.3 high gap cell through a connecting region containing a GaAs/GaP superlattice.

Description: Two processes were considered: the infinite melt process and the finite melt process. The only technique that is developed to the point that 10,000 cells could be produced in one year is the infinite melt liquid phase epitaxy process. The lowest cost per cell was achieved with the advanced metal organic chemical vapor deposition process. Molecular beam epitaxy was limited by the slow growth rate. The lowest cost, an 18 percent efficient cell at air mass zero, was approximately $70 per watt.

Description: The materials, structures, processing, modeling and measurements of high efficiency silicon solar cells were surveyed. In the materials area, highlights included: (1) the possibility of improving cell voltages by reducing minority carrier mobilities in critical regions of the solar cells; (2) the need for and possibility of lowering the surface recombination velocity for improvement of open circuit voltage in shallow junction cells; (3) the present need for improved lifetime in high resistivity cells; and (4) the potential for new materials such as polycrystalline or dendritic web material to perform well at end of life in a radiation environment. In the area of structures, distinction was made between those for terrestrial use and those that would survive radiation environments. Areas such as epitaxial growth and laser or elctron beam annealing (and diffusion) were proposed as having certain advantages over more conventional techniques.

Description: A multistep diffusion processing schedule is described which allows the attainment of high open circuit voltages in 0.1 ohm/cm silicon cells. The schedule consists of a deep primary diffusion, followed by an acid etch of emmitter surface which is then followed by a shallow secondary diffusion. A correlation is made between the observed voltage increases and the time of primary diffusion. Results indicate that as the primary diffusion time increases, the voltage rises monotonically.

Description: Two prototype solid state phased array systems concepts for potential use in the Solar Power Satellite are described; the end-mounted and the sandwich systems. In both concepts, the beam is centered on the rectenna by means of phase conjugation of a pilot signal emanating from the ground. In the end-mounted system 36-watt amplifiers are mounted on the ground-plane, whereas in the sandwich the amplifiers are elevated to the dipoles, and their waste heat is dissipated by beryllium oxide discs. The feed lines are underneath the ground-plane, and a coaxial transmission line is carried all the way to the amplifier input. Also discussed is solid state amplifier development.

Description: The measured performance characteristics of a rectenna array are reviewed and compared to the performance of a single element. It is shown that the performance may be extrapolated from the individual element to that of the collection of elements. Techniques for current and voltage combining are demonstrated. The array performance as a function of various operating parameters is characterized and techniques for overvoltage protection and automatic fault clearing in the array are demonstrated. A method for detecting failed elements also exists. Instrumentation for deriving performance effectiveness is described. Measured harmonic radiation patterns and fundamental frequency scattered patterns for a low level illumination rectenna array are presented.

Description: The fundamental processes involved in the operation of the rectenna system designed for the solar power satellite system are described. The basic design choices are presented based on the desired microwave rf field concentration prior to rectification and based on the ground clearance requirements for the rectenna structure. A nonconcentrating inclined planar panel with a 2 meter minimum clearance configuration is selected as a representative of the typical rectenna.

Description: Progress was reviewed with special emphasis upon recent developments in controlling the phase and amplitude of the microwave power output, and a perceived architecture for its placement in the subarray. Development in the critical pivotal areas of noise, potential cathode life, and efficiency are reported.

Description: The most likely compact configuration to realize both high efficiency and high gain (approx. 40 dB) is a 5-6 cavity design focused by an electromagnet. The basic klystron efficiency cannot be expected to exceed 70-75% without collector depression. It was estimated that the net benefit of a 5 stage collector over a 2 stage collector is between 1.5 and 3.5 kW per tube. A modulating anode is incorporated in the design to enable rapid shutoff of the beam current in case the r.f. drive should be removed.

Description: The basic requirement of the SPS beam pointing system is that it deliver a certain amount of S-band (lambda = 12.5 cm) power to a 9.6 km diameter receiving rectenna on the ground. The power is transmitted from a 1.0 km diameter antenna array on the SPS, which is, for a rectenna at about plus or minus 40 deg. latitude, some 37.5x10 to the 6th power km distant. At the present time ARA's appear to be the best bet to realize this very stringent beam pointing requirement. An active retrodirective array (ARA) transmits a beam towards the apparent source of an illuminating signal called the pilot. The array produces, not merely reflects, RF power. Retrodirectivity is achieved by retransmitting from each element of the array a signal whose phase is the "conjugate" of that received by the element. Phase conjugate circuits and pointing errors in ARA's are described. Results obtained using a 2-element X-band ARA and an 8-element S-band ARA are included.

Description: Three types of computer simulations were developed to study the SPS microwave power transmission system (MPTS). The radially symmetric array simulation is low cost and is utilized to investigate general overall characteristics of the spacetenna at the array level only. "Tiltmain", a subarray level simulation program, is used to study the effects of system errors which modify the far-field pattern. The most recently designed program, "Modmain," takes the detail of simulation down to the RF module level and so to date is the closest numerical model of the reference design.

Description: An extensive parametric investigation was performed of the extraction of energy in output gaps of klystron amplifiers, using 3-D computer programs. Due to complexity of the program which used a hydrodynamic, axially and radially deformable disk ring model and the resulting long computing time, the investigation was limited to the output gap, by far the most important and difficult part of the klystron interaction. Results show that, for a confined flow focused beam throughout the penultimate cavity, radial velocities remain very small and the beam is highly laminar. It was, therefore, concluded that possible errors resulting from treating only the output cavity in 3-D would remain small.

Description: In order to achieve and maintain required flatness of the antenna array, a rotating laser beam used for leveling applications on earth was utilized as a reference system. A photoconductive sensor with a reflective collecting surface determines the displacement and polarity of any misalignment and automatically engages a stepping motor to drive a variable-length mechanism to make the necessary corrections. Once aligned, little power is dissipated since a nulling bridge circuit that centers on the beam is used. A three-point subarray alignment arrangement is described which independently adjusts, in the three orthogonal directions, the height and tilt of subarrays within the MPTS array and readily adapts to any physical distortions of the secondary structure (such as that resulting from severe temperature extremes caused by an eclipse of the Sun). It is shown that only one rotating laser system is required since optical blockage is minimal on the array surface and that it is possible to incorporate a number of redundant laser systems for reliability without affecting the overall performance.

Description: For the solar panels of the European Space Agency (ESA) satellites OTS/MAROTS and ECS/MARECS the thermal cycling tests were performed by using solar simulation methods. The performance data of two different solar simulators used and the thermal test results are described. The solar simulation thermal cycling tests for the ECS/MARECS solar panels were carried out with the aid of a rotatable multipanel test rig by which simultaneous testing of three solar panels was possible. As an alternative thermal test method, the capability of an infrared radiation method was studied and infrared simulation tests for the ultralight panel and the INTELSAT 5 solar panels were performed. The setup and the characteristics of the infrared radiation unit using a quartz lamp array of approx. 15 sq and LN2-cooled shutter and the thermal test results are presented. The irradiation uniformity, the solar panel temperature distribution, temperature changing rates for both test methods are compared. Results indicate the infrared simulation is an effective solar panel thermal testing method.

Description: The experience, capabilities, and facilities being utilized at NASA Lewis in support of energy programs conducted by the Department of Energy and other agencies are discussed. Background information is given regarding NASA's involvement in solving energy problems.

Description: A concept is presented for encapsulating solar cells between two layers of glass either individually, in panels, or in a continuous process. The concept yields an integral unit that is hermetically sealed and that is tolerant to high temperature thermal cycling and to particulate radiation. Data are presented on both high temperature solar cells and special glasses that soften at low temperatures for use with the concept. The results of encapsulating experiments are presented which show the successful application of the concept to the special high temperature cells. The mechanical feasibility of encapsulating 2 mil cells between two layers of 2 mil glass is also demonstrated.

Description: The starting material, cell design/geometry, and cell processing/fabrication for silicon and gallium arsenide solar cells are addressed with reference to radiation damage. In general, it is concluded that diagnostic sensitivities and material purities are basic to making significant gains in end-of-life performance and thermal annealability. Further, GaAs material characterization is so sketchy that a well defined program to evaluate such material for solar cell application is needed to maximize GaAs cell technology benefits.

Description: Bulk samples of Te-doped n-type GaAs were irradiated using 10 MeV to 24 MeV protons to fluences between 2 x 10 to the 11th power protons/sq cm and 2 x 10 to the 14th power protons/sq cm. Majority carrier electrical effects were measured using the vanderPauw techniques and it was observed that radiation damage was minimal at the 10 to the 11th power proton/sq cm fluence. For the higher fluences, carrier removal was proportional to Delta E/Delta x for the protons indicating ionization interactions between the protons and atoms. Thermal annealing was observed at 155 C.

Description: The performance parameters of n(+) p p(+) silicon solar cells of varying thicknesses with boron doped p base resistivities of 1250 and 84 ohm centimeters were determined. High injection theory was used to analyze the experimental data. Results from an analysis of open circuit voltages show a much greater contribution to V(oc) from the back junction than is the case for the lower resistivity in common use. The base minority carrier distribution is seen to be significant in determining the contribution of V(B), the base contribution to V(oc). Although V(B) is small, its value increases with increasing radiation fluence. In this connection it is noted that, with illumination from the p(+) side, the sign of V(B) becomes positive, and V(B) itself becomes an additive term to V(oc). Diffusion lengths determined under high injection conditions are significantly greater than those obtained under low injection, while damage coefficients under low injection are higher than those obtained under high injection conditions.

Description: The reduction of the temperatures required to restore cell performance after irradiation was investigated with emphasis on the annealing characteristics of two groups of cells containing different amounts of oxygen and carbon. Examination of defect behavior in irradiated boron doped silicon leads to the tentative conclusion that further reduction in annealing temperature could be achieved by decreasing the carbon concentration and either neutralizing the divacancy and/or minimizing its formation as a result of irradiation. A significant reduction in the temperature required to remove radiation induced degradation in 0.1 ohm centimeter silicon solar cells was achieved.

Description: Issues related to the feasibility, research and development, and demonstration of a 30% AMO cascade solar cell discussed include the material selection, growth and fabrication techniques, and device development strategy for a monolithic (two terminal) cascade cell, a hybrid (four terminal) cascade cell, and a spectral splitting device (three cells). Workshop recommendations include: (1) initiate a long range research program to develop a three junction, monolithic, cascade cell using either AlGaAsSb-GaAsSb or AlGaInAs-GaInAs material system; (2) emphasize OM-CVD epitaxial growth technique, perhaps combined with other technologies in the near term to obtain tunnel junctions; (3) develop a two junction device first; (4) initiate a cascade solar cell modeling program to study and compare performance of two and four terminal cascade devices exposed to electron and proton irradiation; and (5) encourage and be open to new ideas for developing four terminal, hybrid, cascade cells exploiting novel component cell interconnect technologies.

Description: The advantages of GaAs over silicon are discussed. The substrate problem in solar cell fabrication was reviewed. Future trends in solar energy technology were predicted with special emphasis on cost of production.

Description: Programs aimed at developing large area, high efficiency GaAs heteroface cells for low concentration space applications and high concentration terrestrial applications as well as other programs aimed at developing high efficiency multicolor devices for use in similar applications are described. An additional program aimed at achieving improved power to weight ratio by parting thin film solar cells from their growth substrates prior to their incorporation into an array assembly is also described. There is potential for multiple reuse of the substrates which could lead to reduced costs for such devices. Highlights of these programs and their interrelated contributions toward the goals of reducing specific weight, volume and cost of photovoltaic space power systems are discussed. Overall goals are summarized and current programs and their funding sources are listed.