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  • 1
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    Defect studies in one MeV electron irradiated GaAs and in Al/sub x Ga/sub l-x As P-N junction solar cells (1984)
    In:  CASI
    Details
    Publication Date: 2006-02-14
    Description: Deep level transient spectroscopy reveals that the main electron traps for one-MeV electron irradiated GaAs cells are E9c)-0.31, E(c)-0.90 eV, and the main hole trap is due to the level. Electron trap density was found to vary from 3/tens-trillion ccm for 2/one quadrillion cm 3/3.7 quadrillion cm for 21 sextillion cm electron fluence for electron fluence; a similar result was also obtained for the hole trap density. As for the grown-in defects in the Al(x)Ga(1-x)As p-n junciton cells, only two electron traps with energies of E(c)-0.20 and E(c)-0.34 eV were observed in samples with x = 0.17, and none was found for x 0.05. Auger analysis on the Al(x)Ga(1-x) As window layer of the GaAs solar cell showed a large amount of oxygen and carbon contaminants near the surface of the AlGaAs epilayer. Thermal annealing experiment performed at 250 C for up to 100 min. showed a reduction in the density of both electron traps.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: NASA. Lewis Research Center Space Photovoltaic Res. and Technol. 1983; p 91-101
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  • 2
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    A Review of Air Force space photovoltaic development efforts (1977)
    In:  CASI
    Details
    Publication Date: 2006-05-22
    Description: Silicon and gallium arsenide solar cell developments are reviewed. The rationale for these efforts are cited showing the reasons for placing emphasis on survivability as well as high conversion efficiency.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: NASA. Lewis Res. Center Solar Cell High Efficiency and Radiation Damage; p 25-31
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  • 3
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    Status of AlGaAs/GaAs heteroface solar cell technology (1982)
    In:  Other Sources
    Details
    Publication Date: 2011-08-18
    Description: This paper reviews the various GaAs solar cell programs that have been and are now ongoing which are directed at bringing this particular technology to fruition. The discussion emphasizes space application - both concentrator and flat plate. The rationale for pursuing GaAs cell technology is given along with the different cell types (concentrator, flat plate), approaches to fabricate the devices, the hybrid cells under investigation and approaches to reduce cell mass are summarized. The outlook for the use of GaAs cell technology is given within the context for space application.
    Keywords: ENERGY PRODUCTION AND CONVERSION
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  • 4
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    Radiation Damage Workshop report (1980)
    In:  CASI
    Details
    Publication Date: 2016-06-07
    Description: The starting material, cell design/geometry, and cell processing/fabrication for silicon and gallium arsenide solar cells are addressed with reference to radiation damage. In general, it is concluded that diagnostic sensitivities and material purities are basic to making significant gains in end-of-life performance and thermal annealability. Further, GaAs material characterization is so sketchy that a well defined program to evaluate such material for solar cell application is needed to maximize GaAs cell technology benefits.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: NASA. Lewis Research Center Space Photovoltaic Res. and Technol.; p 289-292
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  • 5
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    Results of the Air Force high efficiency cascaded multiple bandgap solar cell programs (1980)
    In:  CASI
    Details
    Publication Date: 2016-06-07
    Description: The III-V semiconductor materials system that was selected for continued cascade cell development was the AlGaAs cell on GaAs cell structure. The tunnel junction used as transparent ohmic contact between the top cell and the bottom cell continued to be the central difficulty in achieving the program objective of 25 percent AMO efficiency at 25 C. During the tunnel junction and top cell developments it became apparent that the AlGaAs cell has potential for independent development as a single junction converter and is a logical extension of the present GaAs heteroface technology.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: NASA. Lewis Research Center Space Photovoltaic Res. and Technol.; p 125-129
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  • 6
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    A review of Air Force high efficiency cascaded multiple bandgap solar cell research and development (1979)
    In:  CASI
    Details
    Publication Date: 2016-06-07
    Description: At the time of their conception, the cell stack systems to be discussed represent the best semiconductor materials combinations to achieve Air Force program goals. These systems are investigated thoroughly and the most promising systems, from the standpoint of high efficiency, are taken for further development with large area emphasized (at least 4 sq cm). The emphasis in the Air Force cascaded cell program is placed on eventual nonconcentrator application. This use of the final cell design considerably relieves the low resistance requirements for the tunnel junction. In a high concentration application the voltage drop across the tunnel junction can be a very serious problem.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: NASA. Lewis Res. Center Solar Cell High Efficiency and Radiation Damage, 1979; p 255-261
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  • 7
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    Grown-in defects and defects produced by 1-Me electron irradiated in Al0.3Ga0.7As P-N junction solar cells (1982)
    In:  CASI
    Details
    Publication Date: 2016-06-07
    Description: Studies of grown-in defects and defects produced by the one-MeV electron irradiation in Al sub 0.3 Ga sub 0.7As p-n junction solar cells fabricated by liquid phase epitaxial (LPE) technique were made for the unirradiated and one-MeV electron irradiated samples, using DLTS and C-V methods. Defect and recombination parameters such as energy level, defect density, carrier capture cross sections and lifetimes were determined for various growth, annealing, and irradiation conditions.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: NASA. Lewis Research Center Space Photovoltaic Res. and Technol. 1982: High Efficiency, Radiation Damage, and Blanket Technol.; p 195-200
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  • 8
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    Defects and annealing studies in 1-Me electron irradiated (AlGa)As-GaAs solar cells (1982)
    In:  CASI
    Details
    Publication Date: 2016-06-07
    Description: The deep-level defects and recombination mechanisms in the one-MeV electron irradiated (AlGa)As-GaAs solar cells under various irradiation and annealing conditions are discussed. Deep-level transient spectroscopy (DLTS) and capacitance-voltage (CV) techniques were used to determine the defect and recombination parameters such as energy levels and defect density, carrier capture cross sections and lifetimes for both electron and hole traps as well as hole diffusion lengths in these electron irradiated GaAs solar cells. GaAs solar cells used in this study were prepared by the infinite solution melt liquid phase epitaxial (LPE) technique at Hughes Research Lab., with (Al0.9Ga0.1)-As window layer, Be-diffused p-GaAs layer on Sn-doped n-GaAs or undoped n-GaAs active layer grown on n(+)-GaAs substrate. Mesa structure with area of 5.86x1000 sq cm was fabricated. Three different irradiation and annealing experiments were performed on these solar cells.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: NASA. Lewis Research Center Space Photovoltaic Res. and Technol. 1982: High Efficiency, Radiation Damage, and Blanket Technol.; p 137-144
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  • 9
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    Electron and photon degradation in aluminum, gallium and boron doped float zone silicon solar cells (1976)
    In:  Other Sources
    Details
    Publication Date: 2019-07-13
    Description: Solar cells fabricated from Al, Ga and B doped Lopex silicon over a range of resistivities were tested under varying conditions of 1 MeV electron fluence, light exposures and thermal cycling. Results indicate that Al and Ga can replace B as a P type dopant to yield improved solar cell performance.
    Keywords: SPACECRAFT PROPULSION AND POWER
    Type: Photovoltaic Specialists Conference; Nov 15, 1976 - Nov 18, 1976; Baton Rouge, LA
    Format: text
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