Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
62 (1987), S. 4611-4616
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
An improved numerical model for computing the displacement defect density, the damage constants for the minority-carrier diffusion lengths and the degradations of the short-circuit current Isc, open-circuit voltage Voc, and the conversion efficiency ηc in a proton irradiated (AlGa)As-GaAs solar cell is presented in this paper. The model assumed that the radiation-induced displacement defects form effective recombination centers which reduces the minority-carrier diffusion length and hence degrades the Isc, Voc, and ηc of the solar cell. Excellent agreement was obtained between our calculated values and the measured Isc, Voc, and ηc in the proton irradiated GaAs solar cells for proton energies varying from 100 keV to 10 MeV and fluences from 1010 to 1012 cm−2 under normal incidence condition.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.339058
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