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  • 1
    Publication Date: 2019-07-17
    Description: The largest uncertainty in projections of future sea-level change still results from the potentially changing dynamical ice discharge from Antarctica. While ice discharge can alter through a number of processes, basal ice-shelf melting induced by a warming ocean has been identified as a major if not the major cause for possible additional ice flow across the grounding line. Here we derive dynamic ice-sheet response functions for basal ice-shelf melting using experiments carried out within the Sea-level Response to Ice Sheet Evolution (SeaRISE) intercomparison project with five different Antarctic ice-sheet models. As used here these response functions provide separate contributions for four different Antarctic drainage regions. Under the assumptions of linear-response theory we project future ice-discharge for each model, each region and each of the four Representative Concentration Pathways (RCP) using oceanic temperatures from 19 comprehensive climate models of the Coupled Model Intercomparison Project, CMIP-5, and two ocean models from the EU-project Ice2Sea. Uncertainty in the climatic forcing, the oceanic response and the ice-model differences is combined into an uncertainty range of future Antarctic ice-discharge induced from basal ice-shelf melt. The additional ice-loss (Table 6) is clearly scenario-dependent and results in a median of 0.07 m (66%-range: 0.04–0.10 m; 90%-range: −0.01–0.26 m) of global sea-level equivalent for the low-emission RCP-2.6 scenario and yields 0.1 m (66%-range: 0.06–0.14 m; 90%-range: −0.01–0.45 m) for the strongest RCP-8.5. If only models with an explicit representation of ice-shelves are taken into account the scenario dependence remains and the values change to: 0.05 m (66%-range: 0.03–0.08 m) for RCP-2.6 and 0.07 m (66%-range: 0.04–0.11 m) for RCP-8.5. These results were obtained using a time delay between the surface warming signal and the subsurface oceanic warming as observed in the CMIP-5 models. Without this time delay the ranges for all ice-models changes to 0.10 m (66%-range: 0.07–0.12 m; 90%-range: 0.01–0.28 m) for RCP-2.6 and 0.15 m (66%-range: 0.10–0.21 m; 90%-range: 0.02–0.53 m) for RCP-8.5. All probability distributions as provided in Fig. 10 are highly skewed towards high values.
    Repository Name: EPIC Alfred Wegener Institut
    Type: Article , notRev
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  • 2
    Publication Date: 2014-09-17
    Description: The largest uncertainty in projections of future sea-level change results from the potentially changing dynamical ice discharge from Antarctica. Basal ice-shelf melting induced by a warming ocean has been identified as a major cause for additional ice flow across the grounding line. Here we attempt to estimate the uncertainty range of future ice discharge from Antarctica by combining uncertainty in the climatic forcing, the oceanic response and the ice-sheet model response. The uncertainty in the global mean temperature increase is obtained from historically constrained emulations with the MAGICC-6.0 (Model for the Assessment of Greenhouse gas Induced Climate Change) model. The oceanic forcing is derived from scaling of the subsurface with the atmospheric warming from 19 comprehensive climate models of the Coupled Model Intercomparison Project (CMIP-5) and two ocean models from the EU-project Ice2Sea. The dynamic ice-sheet response is derived from linear response functions for basal ice-shelf melting for four different Antarctic drainage regions using experiments from the Sea-level Response to Ice Sheet Evolution (SeaRISE) intercomparison project with five different Antarctic ice-sheet models. The resulting uncertainty range for the historic Antarctic contribution to global sea-level rise from 1992 to 2011 agrees with the observed contribution for this period if we use the three ice-sheet models with an explicit representation of ice-shelf dynamics and account for the time-delayed warming of the oceanic subsurface compared to the surface air temperature. The median of the additional ice loss for the 21st century is computed to 0.07 m (66% range: 0.02–0.14 m; 90% range: 0.0–0.23 m) of global sea-level equivalent for the low-emission RCP-2.6 (Representative Concentration Pathway) scenario and 0.09 m (66% range: 0.04–0.21 m; 90% range: 0.01–0.37 m) for the strongest RCP-8.5. Assuming no time delay between the atmospheric warming and the oceanic subsurface, these values increase to 0.09 m (66% range: 0.04–0.17 m; 90% range: 0.02–0.25 m) for RCP-2.6 and 0.15 m (66% range: 0.07–0.28 m; 90% range: 0.04–0.43 m) for RCP-8.5. All probability distributions are highly skewed towards high values. The applied ice-sheet models are coarse resolution with limitations in the representation of grounding-line motion. Within the constraints of the applied methods, the uncertainty induced from different ice-sheet models is smaller than that induced by the external forcing to the ice sheets.
    Repository Name: EPIC Alfred Wegener Institut
    Type: Article , peerRev
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  • 3
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Journal of Chromatography B: Biomedical Sciences and Applications 660 (1994), S. 279-290 
    ISSN: 0378-4347
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3044-3048 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetoresistive effects were studied in p-type heteroepitaxial diamond films with a strip or Corbino disk structure in a magnetic field ranging from 0 to 5 T. The films were grown by microwave plasma chemical vapor deposition and boron doped by cold ion implantation and rapid thermal annealing. The experimental results show that the magnetoresistance (MGR) of p-type heteroepitaxial diamond films strongly depends on the geometric form of the samples and the magnetic field. Diamond films are assumed to be an isotropic isothermal solid in which conduction is by holes from light, heavy and split-off bands. Based on the Fuchs and Sondheimer thin-film theory, considering spherical energy surfaces and mixed scattering by lattice vibrations and ionized impurities and surface, a theoretical description of the magnetoresistive effect in diamond films is presented by solving the Boltzmann transport equation in the relaxation time approximation. A relationship between the MGR and the thickness of films, magnetic field, and mobility is shown. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1682-1684 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the growth of continuous diamond thin films by bias-assisted hot filament chemical vapor deposition onto hexagonal boron nitride films prepared by plasma chemical vapor deposition on silicon substrates. Negative substrate biasing during the early stages of diamond growth greatly increased the nucleation density. Values of 1010 cm−2 were achieved at −250 V for bias times as short as 25 min. After the nucleation stage, high quality polycrystalline continuous diamond films, as revealed by scanning electron microscopy and Raman analysis, were grown under standard hot filament deposition conditions. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 729-732 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The piezoresistivity of polycrystalline p-type diamond films has been studied. The films were grown by microwave plasma assisted chemical vapor deposition and in situ doped with different concentrations of boron. A four-point electrical measurement was performed to evaluate the film resistivity change upon straining in a four-point bending beam setup. Films were glued directly onto a stainless steel beam and the silicon substrates were selectively removed. A gauge factor (relative change of the resistivity divided by the elastic strain) of about 690 under 100 microstrains was obtained at room temperature for a film doped with 32 ppm boron. With increasing temperature and dopant concentration the gauge factor increases. The experimental results obtained are discussed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1846-1850 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The internal stress and strain in boron-doped diamond films grown by microwave plasma chemical vapor deposition (MWCVD) and hot filament CVD (HFCVD) were studied as a function of boron concentration. The total stress (thermal+intrinsic) was tensile, and the stress and strain increased with boron concentration. The stress and the strain measured in HFCVD samples were greater than those of MWCVD samples at the same boron concentration. The intrinsic tensile stress, 0.84 GPa, calculated by the grain boundary relaxation model, was in good agreement with the experimental value when the boron concentration in the films was below 0.3 at.%. At boron concentrations above 0.3 at.%, the tensile stress was mainly caused by high defect density, and induced by a node-blocked sliding effect at the grain boundary. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1086-1088 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model based on semi-empirical molecular orbital calculations and molecular mechanics is proposed for oriented textured diamond film growth on the Si(111) surface. The diamond 〈111(approximately-greater-than) axis in our model is parallel to the silicon substrate 〈111(approximately-greater-than) while the diamond 〈11¯0(approximately-greater-than) is rotated 10.89° around the 〈111(approximately-greater-than) axis referenced to the 〈11¯0(approximately-greater-than) of the silicon substrate. The atomic density of the grown diamond in one dimension perpendicular to the 〈111(approximately-greater-than) has a ratio 1.003:1 to that of a natural crystal, and thus is much better than the 1:1.015 of the heteroepitaxial diamond on the silicon (001) surface. We conjecture that this improvement in lattice match is important to achieve single-crystal growth. A model for heteroepitaxial growth with a diamond 〈111(approximately-greater-than)//Si〈111(approximately-greater-than) and diamond 〈11¯0(approximately-greater-than)//Si〈11¯0(approximately-greater-than) relationship is also studied but is found to have poorer bonding to the substrate and has a larger residual mismatch of 1:1.015. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Journal of Organometallic Chemistry 277 (1984), S. 203-209 
    ISSN: 0022-328X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Solid State Ionics 40-41 (1990), S. 125-130 
    ISSN: 0167-2738
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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