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  • 1
    Electronic Resource
    Electronic Resource
    Study of a cesium plasma as a selective emitter for thermophotovoltaic applications (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5033-5035 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This experimental study evaluates the potential of a cesium plasma as an emitter for a thermophotovoltaic (TPV) energy conversion system. A cesium plasma, as a result of the ground-state transitions of its single outer-shell electron, produces large amounts of radiation in the 850–890-nm wavelength region. This would provide excellent coupling to silicon, gallium arsenide, and indium phosphide photovoltaic cells. Measurements of the radiative efficiency, the sum of the power at the 852 and 894 nm wavelengths relative to the total emitted power were made and correlated to the plasma operating variables. It was determined that for atomic density in the range (3–6)×1021/m3 and electron temperature in the range 2000–3000 K, radiative efficiencies in excess of 70% are attainable. This would indicate that a cesium plasma with its selective emission characteristics and low electron operating temperatures of 2000–3000 K would be an excellent candidate as an emitter in a TPV system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347090
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    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Cell performance and defect behavior in proton-irradiated lithium-counterdoped n+p silicon solar cells (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2179-2181 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lithium-counterdoped n+p silicon solar cells were irradiated by 10-MeV protons and their performance determined as a function of fluence. It was found that the cell with the highest lithium concentration exhibited the higher radiation resistance. DLTS studies of deep level defects were used to identify two lithium related defects. Defect energy levels otained after the present 10-MeV irradiations were found to be markedly different than those observed after previous 1-MeV electron irradiations. However, the present DLTS data are consistent with our previous suggestion of a lithium–oxygen interaction which tends to inhibit formation of an interstitial boron–oxygen defect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337172
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    XPS investigation of anodic oxides grown on p-type InP (1990)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 15 (1990), S. 641-650 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Chemical composition of anodic oxides grown on lightly doped p-type InP have been investigated by XPS. Anodization was performed in the constant current density (Jc) mode using an ortho-phosphoric acid solution mixed with acetonitrile (ACN). The electrolyte was chosen after experimentation on the effect of the anodization parameters (electrolyte, viscosity of the electrolyte and pH, Jc and illumination level) and annealing conditions on the uniformity and stability of the oxide and the contamination level, as determined by SEM/EDAX, SIMS and XPS. Based on our XPS investigation, it appears that the inhomogeneity with depth of the anodic oxides grown on p-type InP is strongly dependent on the growth conditions. Depending on the anodization procedure, the anodic oxide appears complex and the presence of In(OH)3, In2O3, InPO4, In(PO3)3, In(PO3)4 and other non-stoichiometric In(POy)x compounds have been identified. Depending on the anodization conditions, it appears that both amorphous and crystalline phosphorus-rich condensed phosphates, of interest for surface passivation of InP, can be grown on p-type InP.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740151102
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  • 4
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    Study of a cesium plasma as a selective emitter for thermophotovoltaic applications (1990)
    American Institute of Physics
    Details
    Publication Date: 1990-11-15
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics
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    PAPER CURRENT
  • 5
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    Cell performance and defect behavior in proton‐irradiated lithium‐counterdoped n+p silicon solar cells (1986)
    American Institute of Physics
    Details
    Publication Date: 1986-09-15
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics
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    PAPER CURRENT
  • 6
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    Study of a cesium plasma as a selective emitter for thermophotovoltaic applications (1990)
    In:  Other Sources
    Details
    Publication Date: 2011-12-09
    Description: This experimental study evaluates the potential of a cesium plasma as an emitter for a thermophotovoltaic (TPV) energy conversion system. A cesium plasma, as a result of the ground-state transitions of its single outer-shell electron, produces large amounts of radiation in the 850-890-nm wavelength region. This would provide excellent coupling to silicon, gallium arsenide, and indium phosphide photovoltaic cells. Measurements of the radiative efficiency, the sum of the power at the 852 and 894 nm wavelengths relative to the total emitted power, were made and correlated to the plasma operating variables. It was determined that, for atomic density in the range (3-6) x 10 exp 21/cu cm and electron temperature in the range 2000-3000 K, radiative efficiencies in excess of 70 percent are attainable. This would indicate that a cesium plasma with its selective emission characteristics and low electron operating temperatures of 2000-3000 K would be an excellent candidate as an emitter in a TPV system.
    Keywords: PLASMA PHYSICS
    Type: Journal of Applied Physics (ISSN 0021-8979); 68; 5033-503
    Format: text
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    NASA TECHNICAL REPORTS
  • 7
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    Status of Diffused Junction p(+)n InP Solar Cells for Space Applications (1994)
    In:  CASI
    Details
    Publication Date: 2004-12-03
    Description: Recently, we have succeeded in fabricating diffused junction p(+)n(Cd,S) InP solar cells with measured AMO, 25 C open circuit voltage (V(sub OC)) of 887.6 mV, which, to the best of our knowledge, is higher than previously reported V(sub OC) values for any InP homojunction solar cells. The experiment-based projected achievable efficiency of these cells using LEC grown substrates is 21.3%. The maximum AMO, 25 C efficiency recorded to date on bare cells is, however, only 13.2%. This is because of large external and internal losses due to non-optimized front grid design, antireflection (AR) coating and emitter thickness. This paper summarizes recent advances in the technology of fabrication of p(+)n InP diffused structures and solar cells, resulted from a study undertaken in an effort to increase the cell efficiency. The topics discussed in this paper include advances in: 1) the formation of thin p(+) InP:Cd emitter layers, 2) electroplated front contacts, 3) surface passivation and 4) the design of a new native oxide/AI203/MgF2 three layer AR coating using a chemically-grown P-rich passivating oxide as a first layer. Based on the high radiation resistance and the excellent post-irradiation annealing and recovery demonstrated in the early tests done to date, as well as the projected high efficiency and low-cost high-volume fabricability, these cells show a very good potential for space photovoltaic applications.
    Keywords: Energy Production and Conversion
    Type: Proceedings of the 13th Space Photovoltaic Research and Technology Conference (SPRAT 13); 63-79; NASA-CP-3278
    Format: text
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    NASA TECHNICAL REPORTS
  • 8
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    Cell performance and defect behavior in proton-irradiated lithium-counterdoped n(+)p silicon solar cells (1986)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: Lithium-counterdoped n(+)p silicon solar cells were irradiated by 10-MeV protons, and their performance was determined as a function of fluence. It was found that the cell with the highest lithium concentration exhibited the higher radiation resistance. Deep-level transient spectroscopy studies of deep-level defects were used to identify two lithium-related defects. Defect energy levels obtained after the present 10-MeV irradiations were found to be markedly different than those observed after previous 1-MeV electron irradiations. However, the present DLTS data are consistent with previous suggestion by Weinberg et al. (1984) of a lithium-oxygen interaction which tends to inhibit formation of an interstitial boron-oxygen defect.
    Keywords: SOLID-STATE PHYSICS
    Type: Journal of Applied Physics (ISSN 0021-8979); 60; 2179-218
    Format: text
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    NASA TECHNICAL REPORTS
  • 9
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    Theory of the high base resistivity n(+)pp(+) silicon solar cell and its application to radiation damage effects (1985)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: Particulate radiation in space is a principal source of silicon solar cell degradation, and an investigation of cell radiation damage at higher base resistivities appears to have implication toward increasing solar cell and, therefore, useful satellite lifetimes in the space environment. However, contrary to expectations, it has been found that for cells with resistivities of 84 and 1250 ohm cm, the radiation resistance decreases as cell base resistivity increases. An analytical solar-cell computer model was developed with the objective to determine the reasons for this unexpected behavior. The present paper has the aim to describe the analytical model and its use in interpreting the behavior, under irradiation, of high-resistivity solar cells. Attention is given to boundary conditions at the space-charge region edges, cell currents, cell voltages, the generation of the theoretical I-V characteristic, experimental results, and computer calculations.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: Journal of Applied Physics (ISSN 0021-8979); 57; 4752-476
    Format: text
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    NASA TECHNICAL REPORTS
  • 10
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    Near-optimum design of GaAs-based concentrator space solar cells for 80 C operation (1984)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: Using a detailed computer simulation model and reasonable values of optical, geometrical and material parameters from current published literature, parameter optimization studies were performed on two cell geometries, namely, the circular geometry for a Cassegrainian concentrator with 100 AM0, 80 C operation and the rectangular geometry for a venetian blind concentrator with 20 AM0, 80 C operation. For each cell geometry, three cell configurations were considered: p/n AlGaAs/GaAs; n/p AlGaAs/GaAs; and, n/p GaAs shallow homojunction. The studies show the possibility of designing GaAs-based space solar cells with beginning-of-life efficiencies exceeding 22 percent at 20 to 100 AM0, 80 C and probable efficiency degradation of less than 15 percent after a 70 percent reduction in diffusion length in each cell region.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: Applied Physics Communications (ISSN 0277-9374); 4; 2-3,; 97-119
    Format: text
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    NASA TECHNICAL REPORTS
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