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  • 1
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    Report on an H-F Type Cavity Radiometer after Six Years Exposure in Space Aboard the LDEF Satellite (1991)
    Institute of Physics
    Details
    Publication Date: 1991-01-01
    Print ISSN: 0026-1394
    Electronic ISSN: 1681-7575
    Topics: Electrical Engineering, Measurement and Control Technology
    Published by Institute of Physics
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    PAPER CURRENT
  • 2
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    A Summary of the International Workshops on Space Solar Cell Calibration and Measurement Techniques (1995)
    In:  CASI
    Details
    Publication Date: 2004-12-03
    Description: The first two of a planned series of international workshops concerning space solar cell calibration and measurement techniques have been held within the past year. The need for these workshops arose from the increasing complexity of space solar cells coupled with the growing international nature of the market for space cells and arrays. The workshops, jointly sponsored by NASDA, ESA and NASA, have the objective of obtaining international agreement on standardized values for the AM0 spectrum and constant, recommendations for laboratory measurement practices and the establishment of a set of protocols for making interlaboratory comparison measurements. The results of the first two workshops, held in Waikiki, Hawaii, USA in 1994 and Madrid, Spain in 1995, are presented.
    Keywords: Energy Production and Conversion
    Type: Space Photovoltaic Research and Technology 1995; 186-190; NASA-CP-10180
    Format: text
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    NASA TECHNICAL REPORTS
  • 3
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    Status of Diffused Junction p(+)n InP Solar Cells for Space Applications (1994)
    In:  CASI
    Details
    Publication Date: 2004-12-03
    Description: Recently, we have succeeded in fabricating diffused junction p(+)n(Cd,S) InP solar cells with measured AMO, 25 C open circuit voltage (V(sub OC)) of 887.6 mV, which, to the best of our knowledge, is higher than previously reported V(sub OC) values for any InP homojunction solar cells. The experiment-based projected achievable efficiency of these cells using LEC grown substrates is 21.3%. The maximum AMO, 25 C efficiency recorded to date on bare cells is, however, only 13.2%. This is because of large external and internal losses due to non-optimized front grid design, antireflection (AR) coating and emitter thickness. This paper summarizes recent advances in the technology of fabrication of p(+)n InP diffused structures and solar cells, resulted from a study undertaken in an effort to increase the cell efficiency. The topics discussed in this paper include advances in: 1) the formation of thin p(+) InP:Cd emitter layers, 2) electroplated front contacts, 3) surface passivation and 4) the design of a new native oxide/AI203/MgF2 three layer AR coating using a chemically-grown P-rich passivating oxide as a first layer. Based on the high radiation resistance and the excellent post-irradiation annealing and recovery demonstrated in the early tests done to date, as well as the projected high efficiency and low-cost high-volume fabricability, these cells show a very good potential for space photovoltaic applications.
    Keywords: Energy Production and Conversion
    Type: Proceedings of the 13th Space Photovoltaic Research and Technology Conference (SPRAT 13); 63-79; NASA-CP-3278
    Format: text
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    NASA TECHNICAL REPORTS
  • 4
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    Indium phosphide solar cells - Status and prospects for use in space (1986)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: The current status of indium phosphide cell research is reviewed and state of the art efficiencies compared to those of GaAs and Si. It is shown that the radiation resistance of InP cells is superior to that of either GaAs or Si under 1 MeV electron and 10 MeV proton irradiation. Using lightweight blanket technology, a SEP array structure and projected cell efficiencies, array specific powers are obtained for all three cell types. Array performance is calculated as a function of time in orbit. The results indicate that arrays using InP cells can outperform those using GaAs or Si in orbits where radiation is a significant cell degradation factor. It is concluded that InP solar cells are excellent prospects for future use in the space radiation environment.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Format: text
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    NASA TECHNICAL REPORTS
  • 5
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    Radiation effects in heteroepitaxial InP solar cells (1993)
    In:  CASI
    Details
    Publication Date: 2013-08-31
    Description: Heteroepitaxial InP solar cells, with GaAs substrates, were irradiated by 0.5 and 3 MeV protons and their performance, temperature dependency, and carrier removal rates determined as a function of fluence. The radiation resistance of the present cells was significantly greater than that of non-heteroepitaxial InP cells at both proton energies. A clear difference in the temperature dependency of V(sub oc), was observed between heteroepitaxial and homoepitaxial InP cells. The analytically predicted dependence of dV(sub oc)/dT on Voc was confirmed by the fluence dependence of these quantities. Carrier removal was observed to increase with decreasing proton energy. The results obtained for performance and temperature dependency were attributed to the high dislocation densities present in the heteroepitaxial cells while the energy dependence of carrier removal was attributed to the energy dependence of proton range.
    Keywords: SPACECRAFT PROPULSION AND POWER
    Type: Proceedings of the 12th Space Photovoltaic Research and Technology Conference (SPRAT 12); p 16-22
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    NASA TECHNICAL REPORTS
  • 6
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    Progress in p(+)n InP solar cells fabricated by thermal diffusion (1993)
    In:  CASI
    Details
    Publication Date: 2013-08-31
    Description: The performance results of our most recently thermally diffused InP solar cells using the p(+)n (Cd,S) structures are presented. We have succeeded in fabricating cells with measured AMO, 25 C V(sub oc) exceeding 880 mV (bare cells) which to the best of our knowledge is higher than previously reported V(sub oc) values for any InP homojunction solar cells. The cells were fabricated by thinning the emitter, after Au-Zn front contacting, from its initial thickness of about 4.5 microns to about 0.6 microns. After thinning, the exposed surface of the emitter was passivated by a thin (approximately 50A) P-rich oxide. Based on the measured EQY and J(sub sc)-V(sub oc) characteristics of our experimental high V(sub oc) p(+)n InP solar cells, we project that reducing the emitter thickness to 0.3 microns, using an optimized AR coating, maintaining the surface hole concentration of 3 x 10(exp 18)cm(sup -3), reducing the grid shadowing from actual 10.55 percent to 6 percent and reducing the contact resistance will increase the actual measured 12.57 percent AMO 25 C efficiency to about 20.1 percent. By using our state-of-the-art p(+)n structures which have a surface hole concentration of 4 x 10(exp 18)cm(sup -3) and slightly improving the front surface passivation, an even higher practically achievable AMO, 25 C efficiency of 21.3 percent is projected.
    Keywords: SPACECRAFT PROPULSION AND POWER
    Type: Proceedings of the 12th Space Photovoltaic Research and Technology Conference (SPRAT 12); p 23-32
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    NASA TECHNICAL REPORTS
  • 7
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    A comparative study of p(+)n and n(+)p InP solar cells made by a closed ampoule diffusion (1991)
    In:  CASI
    Details
    Publication Date: 2013-08-31
    Description: The purpose was to demonstrate the possibility of fabricating thermally diffused p(+)n InP solar cells having high open-circuit voltage without sacrificing the short circuit current. The p(+)n junctions were formed by closed-ampoule diffusion of Cd through a 3 to 5 nm thick anodic or chemical phosphorus-rich oxide cap layer grown on n-InP:S Czochralski LEC grown substrates. For solar cells made by thermal diffusion the p(+)n configuration is expected to have a higher efficiency than the n(+)p configuration. It is predicted that the AM0, BOL efficiencies approaching 19 percent should be readily achieved providing that good ohmic front contacts could be realized on the p(+) emitters of thickness lower than 1 micron.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: Space Photovoltaic Research and Technology Conference; 12 p
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    NASA TECHNICAL REPORTS
  • 8
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    Effect of dislocations on properties of heteroepitaxial InP solar cells (1991)
    In:  CASI
    Details
    Publication Date: 2013-08-31
    Description: The apparently unrelated phenomena of temperature dependency, carrier removal and photoluminescence are shown to be affected by the high dislocation densities present in heteroepitaxial InP solar cells. Using homoepitaxial InP cells as a baseline, it is found that the relatively high dislocation densities present in heteroepitaxial InP/GaAs cells lead to increased volumes of dVoc/dt and carrier removal rate and substantial decreases in photoluminescence spectral intensities. With respect to dVoc/dt, the observed effect is attributed to the tendency of dislocations to reduce Voc. Although the basic cause for the observed increase in carrier removal rate is unclear, it is speculated that the decreased photoluminescence intensity is attributable to defect levels introduced by dislocations in the heteroepitaxial cells.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: Space Photovoltaic Research and Technology Conference; 9 p
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    NASA TECHNICAL REPORTS
  • 9
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    Status of diffused junction p+n InP solar cells for space applications (1994)
    In:  CASI
    Details
    Publication Date: 2013-08-31
    Description: Recently, we have succeeded in fabricating diffused junction p(sup +)n(Cd,S) InP solar cells with measured AMO, 25 C open circuit voltage (V(sub OC)) of 887.6 mV, which, to the best of our knowledge, is higher than previously reported V(sub OC) values for any InP homojunction solar cells. The experiment-based projected achievable efficiency of these cells using LEC grown substrates is 21.3 percent. The maximum AMO, 25 C internal losses due to date on bare cells is, however, only 13.2 percent. This is because of large external and internal losses due to non-optimized front grid design, antireflection (AR) coating and emitter thickness. This paper summarizes recent advances in the technology of fabrication of p(sup +)n InP diffused structures and solar cells, resulted from a study undertaken in an effort to increase the cell efficiency. The topics discussed in this paper include advances in: (1) the formation on thin p(sup +) InP:Cd emitter layers, (2) electroplated front contacts, (3) surface passivation and (4) the design of a new native oxide/Al2O3/MgF2 tree layer AR coating using a chemically-grown P-rich passivating oxide as a first layer. Based on the high radiation resistance and the excellent post-irradiation annealing and recovery demonstrated in the early tests done to date, as well as the projected high efficiency and low-cost high-volume fabricability, these cells show a very good potential for space photovoltaic applications.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: Proceedings of the 13th Space Photovoltaic Research and Technology Conference (SPRAT 13); p 63-79
    Format: application/pdf
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    NASA TECHNICAL REPORTS
  • 10
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    Progress in p(+)n InP solar cells fabricated by thermal diffusion (1992)
    In:  Other Sources
    Details
    Publication Date: 2019-01-25
    Description: In SPRAT XI, we proposed that p(sup +)n diffused junction InP solar cells should exhibit a higher conversion efficiency than their n(sup +)p counterparts. This was mainly due to the fact that our p(sup +)n (Cd,S) cell structures consistently showed higher V (sub OC) values than our n(sup +)p (S,Cd) structures. The highest V(sub OC) obtained with the p(sup +)n (Cd,S) cell configuration was 860 mV, as compared to the highest V(sub OC) 840 mV obtained with the n(sup +)p (S,Cd) configuration (AMO, 25 C). In this work, we present the performance results of our most recent thermally diffused cells using the p(sup +)n (Cd,S) structure. We have been able to fabricate cells with V(sub OC) values approaching 880 mV. Our best cell with an unoptimized front contact grid design (GS greater than or equal to 10%) showed a conversion efficiency of 13.4% (AMO, 25 C) without an AR coating layer. The emitter surface was passivated by a -50A P rich oxide. Achievement of such high V(sub OC) values was primarily due to the fabrication of emitter surfaces, having EPD densities as low as 2E2 cm(sup -2) and N(sub a)N(sub d) of about 3E18 cm (sup -3). In addition, our preliminary investigation of p(sup +)n structures seem to suggest that Cd-doped emitter cells are more radiation resistant than Zn-doped emitter cells against both high energy electron and proton irradiation.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: Twelfth Space Photovoltaic Research and Technology Conference (SPRAT 12); p 7
    Format: text
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    NASA TECHNICAL REPORTS
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