ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    facet.materialart.
    Unknown
    High speed, low cost, LEO-thermal-cycling facility (1984)
    In:  CASI
    Details
    Publication Date: 2006-02-14
    Description: The design and operations of a low cost, high rate thermal cycling facility designed for LEO conditions is described. Thermal cycling facilities were constructed with various design criteria. Some were designed to duplicate as closely as possible the conditions a cell or module would encounter while in orbit about the Earth. A typical facility to perform this type of cycling was a large vacuum system with liquid nitrogen cooled walls. The cells were heated by an AMO spectrum solar simulator, then a shutter was closed allowing the cells to give up their heat to the cold walls. This system was good at duplicating the orbital conditions but was slow and very costly to operate. Other systems used a gas atmosphere and heated the cells with radiant heat and cooled the cells by moving them into close proximity to a cold plate. The systems greatly increased the cycle times. Other systems moved the heating and cooling atmosphere into and out of the test areas and achieved reasonable cycle rates. All these systems, however, are expensive to operate.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: Space Photovoltaic Res. and Technol. 1983; p 223-227
    Format: text
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 2
    facet.materialart.
    Unknown
    Potential for use of InP solar cells in the space radiation environment (1985)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: Indium phosphide solar cells were observed to have significantly higher radiation resistance than either GaAs or Si after exposure to 10 MeV proton irradiation data and previous 1 MeV electron data together with projected efficiencies for InP, it was found that these latter cells produced more output power than either GaAs or Si after specified fluences of 10 MeV protons and 1 MeV electrons. Estimates of expected performance in a proton dominated space orbit yielded much less degradation for InP when compared to the remaining two cell types. It was concluded that, with additional development to increase efficiency, InP solar cells would perform significantly better than either GaAs or Si in the space radiation environment.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Format: text
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 3
    facet.materialart.
    Unknown
    Performance and temperature dependencies of proton irradiated n/p and p/n GaAs and n/p silicon cells (1985)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: n/p homojunction GaAs cells are found to be more radiation resistant than p/n heteroface GaAs under 10 MeV proton irradiation. Both GaAs cell types outperform conventional silicon n/p cells under the same conditions. An increased temperature dependency of maximum power for the GaAs n/p cells is attributed to differences in Voc between the two GaAs cell types. These results and diffusion length considerations are consistent with the conclusion that p-type GaAs is more radiation resistant than n-type and therefore that the n/p configuration is possibly favored for use in the space radiation environment. However, it is concluded that additional work is required in order to choose between the two GaAs cell configurations.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Format: text
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 4
    facet.materialart.
    Unknown
    Comparative radiation resistance, temperature dependence and performance of diffused junction indium phosphide solar cells (1987)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: Indium phosphide solar cells whose p-n junctions were processed by the open tube capped diffusion and by the closed tube uncapped diffusion of sulfur into Czochralski-grown p-type substrates are compared. Differences found in radiation resistance were attributed to the effects of increased base dopant concentration. Both sets of cells showed superior radiation resistance to that of gallium arsenide cells, in agreement with previous results. No correlation was, however, found between the open-circuit voltage and the temperature dependence of the maximum power.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: Solar Cells (ISSN 0379-6787); 22; 113-124
    Format: text
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 5
    facet.materialart.
    Unknown
    High efficiency GaAs-Ge tandem solar cells grown by MOCVD (1989)
    In:  CASI
    Details
    Publication Date: 2013-08-31
    Description: High conversion efficiency and low weight are obviously desirable for solar cells intended for space applications. One promising structure is GaAs on Ge. The advantages of using Ge wafers as substrates include the following: they offer high efficiency by forming a two-junction tandem cell; low weight combined with superior strength allows usage of thin (3 mil) wafers; and they are a good substrate for GaAs, being lattice matched, thermal expansion matched, and available as large-area wafers.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: Space Photovoltaic Research and Technology, 1988. High Efficiency, Space Environment, and Array Technology; p 167-176
    Format: application/pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 6
    facet.materialart.
    Unknown
    Progress in indium phosphide solar cell research (1989)
    In:  CASI
    Details
    Publication Date: 2013-08-31
    Description: Progress, dating from the start of the Lewis program, is reviewed emphasizing processing techniques which have achieved the highest efficiencies in a given year. To date, the most significant achievement has been attainment of AM0 total area efficiencies approaching 19 percent. Although closed tube diffusion is not considered to be an optimum process, reasonably efficient 2cm x 2cm and 1cm x 2cm InP cells have been produced in quantity by this method with a satellite to be launched in 1990 using these cells. Proton irradiation of these relatively large area cells indicates radiation resistance comparable to that previously reported for smaller InP cells. A similar result is found for the initial proton irradiations of ITO/InP cells processed by D. C. sputtering. With respect to computer modelling, a comparison of n/p homojunction InP and GaAs cells of identical geometries and dopant concentrations has confirmed the superior radiation resistance of InP cells under 1 MeV electron irradiations.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: Space Photovoltaic Research and Technology, 1988. High Efficiency, Space Environment, and Array Technology; p 19-27
    Format: application/pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 7
    facet.materialart.
    Unknown
    Demonstrated results of welded and soldered interconnections (1985)
    In:  CASI
    Details
    Publication Date: 2016-06-07
    Description: Solar cell modules with welded and soldered interconnections were constructed using a flexible substrate material. These modules were thermally cycled between approx. 80 deg C at rates 100 cycles/day to demonstrate survivability under simulated low Earth orbit (LEO) temperature conditions. The modules, cycled in an inert atmosphere, show durability for 36,000 cycles.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: Space Photovoltaic Research and Technology 1985; p 239-241
    Format: application/pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 8
    facet.materialart.
    Unknown
    Indium phosphide solar cell research in the United States: Comparison with non-photovoltaic sources (1989)
    In:  CASI
    Details
    Publication Date: 2013-08-29
    Description: Highlights of the InP solar cell research program are presented. Homojunction cells with efficiencies approaching 19 percent are demonstrated, while 17 percent is achieved for ITO/InP cells. The superior radiation resistance of the two latter cell configurations over both Si and GaAs cells has been shown. InP cells aboard the LIPS3 satellite show no degradation after more than a year in orbit. Computed array specific powers are used to compare the performance of an InP solar cell array to solar dynamic and nuclear systems.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: ESA, European Space Power, Volume 2; p 537-542
    Format: text
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 9
    facet.materialart.
    Unknown
    Radiation damage in proton irradiated indium phosphide solar cells (1986)
    In:  Other Sources
    Details
    Publication Date: 2013-08-29
    Description: Indium phosphide solar cells exposed to 10 MeV proton irradiations were found to have significantly greater radiation resistance than either GaAs or Si. Performance predictions were obtained for two proton dominated orbits and one in which both protons and electrons were significant cell degradation factors. Array specific power was calculated using lightweight blanket technology, a SEP array structure, and projected cell efficiencies. Results indicate that arrays using fully developed InP cells should out-perform those using GaAs or Si in orbits where radiation is a significant cell degradation factor.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: ESA Proceedings of the Fifth European Symposium on Photovoltaic Generators in Space; p 415-420
    Format: text
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 10
    facet.materialart.
    Unknown
    Comparative performance of diffused junction indium phosphide solar cells (1987)
    In:  CASI
    Details
    Publication Date: 2013-08-31
    Description: A comparison is made between indium phosphide solar cells whose p-n junctions were processed by open tube capped diffusion, and closed tube uncapped diffusion, of sulfur into Czochralski grown p-type substrates. Air mass zero, total area, efficiencies ranged from 10 to 14.2 percent, the latter value attributed to cells processed by capped diffusion. The radiation resistance of these latter cells was slightly better, under 1 MeV electron irradiation. However, rather than being process dependent, the difference in radiation resistance could be attributed to the effects of increased base dopant concentration. In agreement with previous results, both cells exhibited radiation resistance superior to that of gallium arsenide. The lowest temperature dependency of maximum power was exhibited by the cells prepared by open tube capped diffusion. Contrary to previous results, no correlation was found between open circuit voltage and the temperature dependency of Pmax. It was concluded that additional process optimization was necessary before concluding that one process was better than another.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: Space Photovoltaic Research and Technology 1986. High Efficiency, Space Environment and Array Technology; p 261-271
    Format: application/pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...