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  • Other Sources  (877)
  • ELECTRONICS AND ELECTRICAL ENGINEERING  (877)
  • 1980-1984  (877)
  • 1950-1954
  • 1
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    Test methods and results of the 10-cell bipolar Ni-H2 battery (1983)
    In:  CASI
    Details
    Publication Date: 2006-02-14
    Description: Characterization tests were carried out at three charge levels and four discharge levels. The "c' or capacity of the battery is designated at 6.5 ampere-hours. The recharge ampere-hours was the same for all test conditions, 6.5 A-H, regardless of the discharge capacity removed for any particular discharge rate. Less capacity can be removed at higher discharge rates to the same termination voltage, which was 0.50 volts for the weakest (lowest voltage) cell. The general trend of efficiencies increases as the charge rate increases as noted in results of the table included in the handout package. The data also indicate the efficiency increases as the discharge rate decreases. This is true; however, efficiencies at the discharge rates of c and 2c are penalized because these cycles received more overcharge than necessary.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Goddard Space Flight Center The 1982 Goddard Space Flight Center Battery Workshop; p 496-500
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  • 2
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    Determination of the reliability of Ni-Cd batteries from survival data on cells fabricated 1964 - 1977 (1983)
    In:  CASI
    Details
    Publication Date: 2006-02-14
    Description: The probability of Ni-Cd battery survival was determined by researching survival data on cells fabricated from 1964-1977. A log of cell failure times were plotted against cumulative failure percentage and mean and standard deviation were determined.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Goddard Space Flight Center The 1982 Goddard Space Flight Center Battery Workshop; p 470-479
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  • 3
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    Experimental design (1983)
    In:  CASI
    Details
    Publication Date: 2006-02-14
    Description: The design of long life, low weight nickel cadmium cells is studied. The status of a program to optimize nickel electrodes for the best performance is discussed. The pore size of the plaque, the mechanical strength and active material loading are considered in depth.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Goddard Space Flight Center The 1982 Goddard Space Flight Center Battery Workshop; p 253-469
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  • 4
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    Advanced nickel hydrogen cell configuration study (1983)
    In:  CASI
    Details
    Publication Date: 2006-02-14
    Description: An evaluation of the current nickel hydrogen cell design is presented. The IPV, or the Individual Pressure Vessel, is the state of the art right now. The present design, 3 1/2 inch cell, has a current limit of 50 ampere-hours. The nickel hydrogen cell design is the state of the art. Its size is 3 1/2 inches which limits it to 50 hours. The probable limits of that are probably 160 amphere IPV cell remaining in the passive cooling mode. The IPV stacks is a parallel connection of electrodes. Positive electrodes are connected with leads to the top portion of the stack and negative electrodes are connected with leads and pulled down to the bottom. So it is a combination connection of paralleling series electrostacking--parallel inside each individual stack, and series connected from one stack to the next. It offers, in the analysis, improvements in packaging, cost, energy density, and specific energy.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Goddard Space Flight Center The 1982 Goddard Space Flight Center Battery Workshop; p 480-495
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  • 5
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    Nickel hydrogen/nickel cadmium battery trade studies (1983)
    In:  CASI
    Details
    Publication Date: 2006-02-14
    Description: Nickel Hydrogen cell and battery technology has matured to the point where a real choice exists between Nickel Hydrogen and Nickel Cadmium batteries for each new spacecraft application. During the past few years, a number of spacecraft programs have been evaluated at Hughes with respect to this choice, with the results being split about fifty-fifty. The following paragraphs contain criteria which were used in making the battery selection.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Goddard Space Flight Center The 1982 Goddard Space Flight Center Battery Workshop; p 430-438
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  • 6
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    Canadian experience with nickel cadmium systems (1983)
    In:  CASI
    Details
    Publication Date: 2006-02-14
    Description: The Defense Research Establishment Ottawa (DREO) has been studying the nickel-cadmium system, both vented and sealed, since the early 1950's. Reasonable success has been achieved in a wide variety of applications covering: military vehicle use under Arctic conditions; high performance military aircraft; manpacked communications sets; remote standby power and small portable instrumentation. Early studies on the vented system for high rate vehicle and aircraft cranking applications proved useful in later studies on the sealed NiCd system. This was especially true in the areas of plate loading and electrolyte composition. To achieve high rate cranking currents of 20C to 30C, it was necessary to have light to moderate plate loadings, a large reactive surface area, and electrolyte of optimum conductivity. DREO undertook some fundamental studies to understand the system from the inside out rather than test cells from the outside and then analyze their components. The conclusions of these studies were incorporated into the Procurement Specification for Ni-Cd cells ISISA Spec S615-P-2. A brief comment will be made on the choice of cell design and how some of the factors of cell manufacture could affect cell performance.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Goddard Space Flight Center The 1982 Goddard Space Flight Center Battery Workshop; p 439-451
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  • 7
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    Real and potential nickel hydrogen superiority (1983)
    In:  CASI
    Details
    Publication Date: 2006-02-14
    Description: Events from the development and orbital flight experience with a nickel hydrogen battery are described. The events highlight characteristics of nickel hydrogen which afford superior capability in overcharge, overdischarge and state of charge evaluation, when compared to the nickel cadmium electrochemical system. Some developments in nickel hydrogen technology that provide the potential of furthering nickel hydrogen superiority for satellite applications are also discussed.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Goddard Space Flight Center The 1982 Goddard Space Flight Center Battery Workshop; p 416-429
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  • 8
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    Ni-H2 batteries for communications satellites (1983)
    In:  CASI
    Details
    Publication Date: 2006-02-14
    Description: Ni-H2 batteries are just now being put into service. All of the remaining INTELSAT V satellites (approximately 10), starting with the next to be launched in early 1983, will use Ni-H2 batteries. In addition, the next generation of INTELSAT VI satellites, and probably INTELSAT VII and VIII, will use Ni-H2 batteries. This means that international telecommunications satellites will use Ni-H2 batteries through the 1990's. It is projected that the lifetime of these batteries will be greater than 10 years at deep depth-of-discharge (DOD), and that the battery subsystem will no longer limit satellite lifetime or communications capability during eclipse periods. This paper discusses the advantages of the Ni-H2 battery, as compared with the Ni-Cd battery, for telecommunications satellites.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Goddard Space Flight Center The 1982 Goddard Space Flight Center Battery Workshop; p 389-415
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  • 9
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    Status of SAFT silver hydrogen cell development (1983)
    In:  CASI
    Details
    Publication Date: 2006-02-14
    Description: Nickel-hydrogen cells appear to be an improvement over the nickel-cadmium in applications requiring longer lifetime and reduced weight. An even more efficient couple, the silver-hydrogen couple, is also considered. After a theoretical study first performed by the Battelle Institute of Geneva under ESA (European Space Agency) contract, SAFT has undertaken more detailed analyses of the silver-hydrogen degradation mechanisms. ESA and the French Department of Defense contracted with SAFT for a full-development program of the silver-hydrogen technology.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Goddard Space Flight Center The 1982 Goddard Space Flight Center Battery Workshop; p 347-371
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  • 10
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    Reconditioning and the nickel electrode (1983)
    In:  CASI
    Details
    Publication Date: 2006-02-14
    Description: This effects of reconditioning on the performance of NiCd batteries are reviewed. These effects are correlated with cell experiments and individual electrode investigations. The effects of reconditioning on the positive electrode performance are found to be significant. A mechanism is proposed that rationalizes the operation of the nickel electrode and suggests that reconditioning minimizes depth of discharge stress during use and maintains uniformity of the active material.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Goddard Space Flight Center The 1982 Goddard Space Flight Center Battery Workshop; p 324-345
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  • 11
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    Spacecraft battery reconditioning cost considerations (1983)
    In:  CASI
    Details
    Publication Date: 2006-02-14
    Description: Cost considerations for spacecraft battery reconditioning are studied. Results indicate that the cost of performing reconditioning is minuscule compared with spacecraft system investment. Results also indicate that spacecraft life extension of a few days justifies incorporation of reconditioning circuitry.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Goddard Space Flight Center The 1982 Goddard Space Flight Center Battery Workshop; p 303-310
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  • 12
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    Unique battery reconditioning cycle for RCA's geostationary satellites and its applicability for low Earth satellite (1983)
    In:  CASI
    Details
    Publication Date: 2006-02-14
    Description: Six (6) geostationary spacecraft, manufactured by RCA Astro, are presently operating in orbit. All of their batteries are performing well. They all contain unique battery reconditioning circuitry, permitting individual cell reconditioning to practically zero volts without the danger of cell reversal. This reconditioning is performed just prior to start of each eclipse season. This technique has maintained the battery's end-of-discharge voltage with mission life. The oldest operating RCA Astro geostationary spacecraft, Satcom F1 and F2, have now completed almost 7 and 6-3/4 years in orbit, respectively. Their battery performance, reported herein, show that a major milestone in the mission longevity of nickel-cadmium batteries has heen achieved. Low earth orbit test data show a long lasting effect of maintaining end-of-discharge voltages for nickel cadmium cells using periodic reconditioning. The unique RCA light-weight reconditioning circuitry can accomplish a quick reconditioning and prevent cell reversal. Reconditioning, thus, has the potential for extending mission life of geostationary as well as low earth orbit spacecraft, when two or more batteries are present.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Goddard Space Flight Center The 1982 Goddard Space Flight Center Battery Workshop; p 311-323
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  • 13
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    Deep discharge reconditioning: Pros and cons (1983)
    In:  CASI
    Details
    Publication Date: 2006-02-14
    Description: Deep-discharge reconditioning (DDR) can be of great benefit to battery performance, especially in geosynchronous orbit, if performed properly and regularly, and can be essential to operation of batteries at the high depths of discharge (DOD) required to minimize weight. The procedure should be tailored to fit the nature of the degradation occuring during regular cycling. DDR is not without its drawbacks, however, and these differ depending on the normal DOD to be sustained and/or whether the discharge is done at the battery or the cell level. Battery-level discharge carries the minimum weight penalty but raises questions of the effects of low-rate cell reversal that as yet have no firm answers. Cell level discharge avoids cell reversal but carries significant penalties of weight and complexity. Thus no universal procedure or method of implementation of deep-discharge reconditioning is now available and thus the various approaches must be evaluated for each application.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Goddard Space Flight Center The 1982 Goddard Space Flight Center Battery Workshop; p 297-302
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  • 14
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    Control requirements for future battery systems (1983)
    In:  CASI
    Details
    Publication Date: 2006-02-14
    Description: It is argued that sophisticated battery control systems are required to support the high power, high energy spacecraft secondary battery systems of the post 1985 time period. Four categories of battery control system functions are defined and discussed: battery operational control, auxiliary system control, battery system status indication and fault detection fault isolation. A concept for implementation of such a control system is also presented and discussed.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Goddard Space Flight Center The 1982 Goddard Space Flight Center Battery Workshop; p 270-279
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  • 15
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    A comparison of voltage limit charge control for fixed array and sun oriented array missions (1983)
    In:  CASI
    Details
    Publication Date: 2006-02-14
    Description: A comparison of voltage limited control methods limit control methods for fixed array and oriented array missions is given. The LANDSAT D, Earth Radiation Budget Experiment and Solar maximum Mission techniques are compared.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: The 1982 Goddard Space Flight Center Battery Workshop; p 231-258
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  • 16
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    Battery charge control with temperature compensated voltage limit (1983)
    In:  CASI
    Details
    Publication Date: 2006-02-14
    Description: Battery charge control for orbiting spacecraft with mission durations from three to ten years, is a critical design feature that is discussed. Starting in 1974, the General Electric Space Systems Division designed, manufactured and tested battery systems for six different space programs. Three of these are geosynchronous missions, two are medium altitude missions and one is a near-earth mission. All six power subsystems contain nickel cadmium batteries which are charged using a temperature compensated voltage limit. This charging method was found to be successful in extending the life of nickel cadmium batteries in all three types of earth orbits. Test data and flight data are presented for each type of orbit.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Goddard Space Flight Center The 1982 Goddard Space Flight Center Battery Workshop; p 259-269
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  • 17
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    Computer modeling of batteries from non-linear circuit elements (1983)
    In:  CASI
    Details
    Publication Date: 2006-02-14
    Description: A simple non-linear circuit model for battery behavior is given. It is based on time-dependent features of the well-known PIN change storage diode, whose behavior is described by equations similar to those associated with electrochemical cells. The circuit simulation computer program ADVICE was used to predict non-linear response from a topological description of the battery analog built from advice components. By a reasonable choice of one set of parameters, the circuit accurately simulates a wide spectrum of measured non-linear battery responses to within a few millivolts.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Goddard Space Flight Center The 1982 Goddard Space Flight Center Battery Workshop; p 201-215
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  • 18
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    Modeling a Li/SOCl2 battery for design purposes (1983)
    In:  CASI
    Details
    Publication Date: 2006-02-14
    Description: A generalized code applicable to many different electrochemical systems and geometric designs is discussed. The code is to be set up so that physical property data such as thermal conductivity, viscosity, density, and configuration (e.g. physical dimensions) are the input data. Thus, by changing these parameters many different battery configurations can be handled. The outputs, as a function of time and space, are voltage, current, temperature, pressure, velocity, and species concentration.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Goddard Space Flight Center The 1982 Goddard Space Flight Center Battery Workshop; p 178-199
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  • 19
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    Fitting voltage curves with an electrochemically derived equation (1983)
    In:  CASI
    Details
    Publication Date: 2006-02-14
    Description: Previous work is refined and extended to describe the discharge curve of Ni-Cd cells. Several models are discussed which are based on chronopotentiometry theory and on a thermodynamic approach. Emphasis is placed on improvement of the fit for the initial portion of discharge. Equations are presented which improve the fit for all regions of the discharge curve.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Goddard Space Flight Center The 1982 Goddard Space Flight Center Battery Workshop; p 164-177
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  • 20
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    Battery model for electrical power system energy balance (1983)
    In:  CASI
    Details
    Publication Date: 2006-02-14
    Description: A model to simulate nickel-cadmium battery performance and response in a spacecraft electrical power system energy balance calculation was developed. The voltage of the battery is given as a function of temperature, operating depth-of-charge (DOD), and battery state-of-charge. Also accounted for is charge inefficiency. A battery is modeled by analysis of the results of a multiparameter battery cycling test at various temperatures and DOD's.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Goddard Space Flight Center The 1982 Goddard Space Flight Center Battery Workshop; p 117-124
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  • 21
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    Validating cell/battery safety (1983)
    In:  CASI
    Details
    Publication Date: 2006-02-14
    Description: Using the accelerating rate calorimeter, the hazards associated with exothermic reactions occurring in Li/SO2 cells under the conditions of discharge, forced overdischarge, resistive overdischarge, and forced overdischarge at low tempratures are quantitatively defined in terms of: rate of pressure generation, overall pressure rise, rate of temperature, and overall heat generation. Consistent with the findings of other investigators, it is believed that the major reactions contributing to Li/SO2 cell exothermicity are: the lithium/acetonitrile reaction, the thermal decomposition of lithium dithionite, and the lithium/sulfur reaction.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Goddard Space Flight Center The 1982 Goddard Space Flight Center Battery Workshop; p 85-99
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  • 22
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    Design of a safe cylindrical lithium/thionyl chloride cell (1983)
    In:  CASI
    Details
    Publication Date: 2006-02-14
    Description: Cell design criteria were established which can result in a safe lithium/thionyl chloride cell. A cell vent, a low area internal anode cell, cell balance and composition of the cathode-electrolyte solution were found to be important factors in the design of a safe cell. In addition to routine testing, both undischarged and discharged cells were subjected to electrical abuse, environmental abuse and mechanical abuse without disassembly.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Goddard Space Flight Center The 1982 Goddard Space Flight Center Battery Workshop; p 75-84
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  • 23
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    Controlling hazardous reactions during voltage reversal of high energy lithium cells (1983)
    In:  CASI
    Details
    Publication Date: 2006-02-14
    Description: The roll of general cell design characteristics in preventing hazardous reactions during voltage reversal of lithium cells is discussed. Anode limited versus cathode limited design and case positive versus case negative design are addressed.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Goddard Space Flight Center The 1982 Goddard Space Flight Center Battery Workshop; p 67-74
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  • 24
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    Safety tests (1983)
    In:  CASI
    Details
    Publication Date: 2006-02-14
    Description: The ovedischarge test program and results for double A and D lithium cells are discussed. Temperature increases and sparking responses are dressed.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Goddard Space Flight Center The 1982 Goddard Space Flight Center Battery Workshop; p 60-63
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  • 25
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    Low temperature performance tests (1983)
    In:  CASI
    Details
    Publication Date: 2006-02-14
    Description: Lithium cell performance at extremely low temperatures was tested and materials which could be used to make a cell completely electro-chemically inert for the purpose of deactivation were investigated. The effects of temperature and current density on polarization and performance loss are discussed along with discharge recovery behavior.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Goddard Space Flight Center The 1982 Goddard Space Flight Center Battery Workshop; p 64-66
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  • 26
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    Policies governing the use of lithium batteries in the Navy (1983)
    In:  CASI
    Details
    Publication Date: 2006-02-14
    Description: Lithium batteries offer many advantages for Navy systems but may also exhibit undesirable hazardous behavior. Safety problems have been traced to a variety of chemical and physical causes. The Navy has established a central safety office with responsibility for all lithium battery use. Before an item is approved for Navy use, it must pass both a design review and a set of end item tests. These reviews focus on complete systems which include a battery inside the end item. After system approval, specific regulations govern the transportation, storage, and disposal of the unit containing lithium batteries. Each of these areas is discussed in detail.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Goddard Space Flight Center The 1982 Goddard Space Flight Center Battery Workshop; p 23-34
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  • 27
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    The Galileo probe Li/SO2 battery: The safest battery on Jupiter (1983)
    In:  CASI
    Details
    Publication Date: 2006-02-14
    Description: The unique power requirement of NASA's Galileo Jupiter Probe are most readily met by a Li/SO2 battery; however, because this battery system is not space flight proven, extensive effort was required to qualify this device from the stand point of performance and safety. Due to the rather checkered safety record of the Li/SO2 system, safety has been foremost among the design considerations and has been addressed at the cell, battery and system level. The mission requirements which led to the choice of the Li/SO2 battery and the safety engineering which went into the battery and power system design are described.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Goddard Space Flight Center The 1982 Goddard Space Flight Center Battery Workshop; p 15-22
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  • 28
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    forced overdischarge related safety aspects of Li/SO2 and Li/SOCl2 cells (1983)
    In:  CASI
    Details
    Publication Date: 2006-02-14
    Description: Results of an experiment investigating overdischarge behavior of two types of Li/SO2 cells are presented. Forced overdischarges of the Li/LiBr, CH3CN/SO2 cell can result in unsafe behavior such as venting with fire and release of toxic gases. The hazards may be minimized or eliminated by careful cell design considerations and practice of high standards of quality contol in cell manufacture. Seemingly safe cells at 25 C when forced overdischarged at -25 C, even at low currents, exhibited incipient signs of hazards. Their cathodes indicated signs of shock sensitivity. Cathode limited Li/SOCl2 cells were safe during forced overdischarge for long periods of time. Lithium limited Li/SOCl2 cells in which practically all Li had been used up before cell reversal did not exhibit hazardous behavior. Anode limited Li/SOCl2 cells, but not Li limited, exhibited detonations, all during overdischarges at relatively low current densities of or = 1 mA/sq cm 2. Anode potentials 4v with large oscillations preceeded the events. The events were confined to the anode and the temperature rose high enough to melt Ni grids.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Goddard Space Flight Center The 1982 Goddard Space Flight Center Battery Workshop; p 47-59
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  • 29
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    Primary lithium batteries, some consumer considerations (1983)
    In:  CASI
    Details
    Publication Date: 2006-02-14
    Description: In order to determine whether larger size lithium batteries would be commercially marketable, the performance of several D size lithium batteries was compared with that of an equivalent alkaline manganese battery, and the relative costs of the different systems were compared. It is concluded that opportunities exist in the consumer market for the larger sizes of the low rate and moderate rate lithium batteries, and that the high rate lithium batteries need further improvements before they can be recommended for consumer applications.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Goddard Space Flight Center The 1982 Goddard Space Flight Center Battery Workshop; p 35-45
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  • 30
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    Hazardous behavior of lithium batteries. Case histories (1983)
    In:  CASI
    Details
    Publication Date: 2006-02-14
    Description: Case histories were described of hazardous behavior for three different cell sizes ranging in nominal capacity from 300 mAh to 12,000 Ah. Design characteristics and other facts believed to have been responsible for the cell explosions, are presented. Obvious facts are discussed as causes for hazardous behavior of lithium batteries in general and oxyhalide batteries in particular.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Goddard Space Flight Center The 1982 Goddard Space Flight Center Battery Workshop; p 3-14
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  • 31
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    The ac power line protection for an IEEE 587 Class B environment (1984)
    In:  CASI
    Details
    Publication Date: 2006-02-14
    Description: The 587B series of protectors are unique, low clamping voltage transient suppressors to protect ac-powered equipment from the 6000V peak open-circuit voltage and 3000A short circuit current as defined in IEEE standard 587 for Category B transients. The devices, which incorporate multiple-stage solid-state protector components, were specifically designed to operate under multiple exposures to maximum threat levels in this severe environment. The output voltage peaks are limited to 350V under maximum threat conditions for a 120V ac power line, thus providing adequate protection to vulnerable electronic equipment. The principle of operation and test performance data is discussed.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Langley Research Center Intern. Aerospace and Ground Conf. on Lightning and Static Elec.; 5 p
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  • 32
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    Detection and analysis of radio frequency lightning emissions (1982)
    In:  CASI
    Details
    Publication Date: 2006-02-14
    Description: The feasibility study of detection of lightning discharges from a geosynchronous satellite requires adequate ground-based information regarding emission characteristics. In this investigation, a measurement system for collection of S-band emission data is set up and calibrated, and the operations procedures for rapid data collection during a storm activity developed. The system collects emission data in two modes; a digitized, high-resolution, short duration record stored in solid-state memory, and a continuous long-duration record on magnetic tape. Representative lightning flash data are shown. Preliminary results indicate appreciable RF emissions at 2 gHz from both the leader and return strokes portions of the cloud-to-ground discharge with strong peaks associated with the return strokes.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Alabama Univ. in Huntsville The 1981 NASA(ASEE Summer Fac. Fellowship Program; 20 p
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  • 33
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    A BAPTA employing rotary transformers, stepper motors and ceramic ball bearings (1981)
    In:  CASI
    Details
    Publication Date: 2006-01-16
    Description: The utilization of rotary transformers as an alternative to slip rings for the power transfer from solar panels to a satellite's main body could be advantageous, especially if an ac bus system is taken into consideration. Different approaches with main emphasis on the electromagnetic design were investigated and showed efficiencies of up to 99% with a 3 kW power capability. A solidly preloaded pair of ball bearings with ceramic balls assures proper transformer air gaps and acceptable torque changes over temperature and temperature gradients. The bearing and power transfer assembly is driven by a direct drive stepper motor with inherent redundancy properties and needs no caging mechanism.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Marshall Space Flight Center The 15th Aerospace Mech. Symp.; p 189-203
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  • 34
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    The design and evaluation of superconducting connectors (1982)
    In:  CASI
    Details
    Publication Date: 2006-02-14
    Description: The development of a superconducting connector for superconducting circuits on space flights is described. It is proposed that such connectors be used between the superconducting readout loop and the SQUID magnetometer in the Gravity Probe B experiment. Two types of connectors were developed. One type employs gold plated niobium wires making pressure connections to gold plated niobium pads. Lead-plated beryllium-copper spring contacts can replace the niobium wires. The other type is a rigid solder or weld connection between the niobium wires and the niobium pads. A description of the methods used to produce these connectors is given and their performance analyzed.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Alabama Univ. in Huntsville The 1981 NASA(ASEE Summer Fac. Fellowship Program; 10 p
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  • 35
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    Modeling battery life through changes in voltage fit coefficients (1983)
    In:  CASI
    Details
    Publication Date: 2006-10-01
    Description: A number of 12 ampere-hour cells, nickel cadmium, were cycled under various conditions of temperature and depth of discharge. Using this data, it was confirmed that a five parameter fit equation could be used to model the data within a few millivolts. Both charge and discharge curves can be fit with accuracies in the range of one or two millivolts. The fit coefficients when plotted versus cycles show definite trends and patterns which can be used in an operational sense to predict battery voltage as a function of temperature and depth of discharge.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Goddard Space Flight Center The 1982 Goddard Space Flight Center Battery Workshop; p 125-163
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  • 36
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    Smokeless wire insulation (1982)
    In:  Other Sources
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    Publication Date: 2011-08-19
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA Technol. Appl. Team; p 37
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  • 37
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    Theory of high-harmonic rectangular gyrotron for TE(mn) modes (1984)
    In:  Other Sources
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    Publication Date: 2011-08-18
    Description: In this paper, the linearized relativistic Vlasov equation is solved and a dispersion relation is calculated for the interaction between a relativistic electron beam and the electromagnetic fields of a rectangular waveguide supporting TE(mn) modes. The dispersion relation is simplified to the special case of a frame of reference moving with the electrons and the resulting coupling coefficient epsilon(mn)super l is calculated for various TE(mn) modes. The dependence of epsilon(mn)super l on the parity of the harmonic number l and various mn modes of the waveguide are discussed.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Transactions on Electron Devices (ISSN 0018-9383); ED-31; 1212-121
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  • 38
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    High-efficiency V-band GaAs IMPATT diodes (1984)
    In:  Other Sources
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    Publication Date: 2011-08-18
    Description: Double-drift GaAs IMPATT diodes were designed for V-band frequency operations and fabricated using molecular-beam epitaxy. The diodes were fabricated in two configurations: (1) circular mesa diodes with silver-plated (integrated) heat sinks: (2) pill-type diodes bonded to diamond heat sinks. Both configurations utilized a miniature quartz-ring package. Output power greater than 1 W CW was achieved at V-band frequencies from diodes on diamond heat sinks. The best conversion efficiency was 13.3 percent at 55.5 GHz with 1 W output power.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Electronics Letters (ISSN 0013-5194); 20; 212-214
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  • 39
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    New cryogenic P-channel metal-oxide-semiconductor field effect transistor (MOSFET) with optimized doping yielding performance superior to the G-118, W-164, and 3N165 at 77 K, 4 K, and 1.8 K (1983)
    In:  Other Sources
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    Publication Date: 2011-08-18
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
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  • 40
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    Integrating 128 element InSb array - Recent results (1982)
    In:  Other Sources
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    Publication Date: 2011-08-18
    Description: There has been a continuing evolution toward larger arrays of infrared detectors, and the technology base derived from the Galileo Near Infrared Mapping Spectrometer (NIMS) has been expanded to linear arrays including from 128 to 512 elements. This advance is based on the commercial availability of high-quality InSb photodiodes and 128/256 element FET switch MUX's (multiplexing elements). The present investigation is concerned with an experimental 128-element linear imager using InSb detectors and silicon MUX for readout. Attention is given to detector array electrical characteristics, the detector readout architecture, noise, and special effects.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
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  • 41
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    K-band FET amplifier for satellite downlink (1984)
    In:  Other Sources
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    Publication Date: 2011-08-18
    Description: State-of-the-art performance is demonstrated with solid-state amplifiers in K-band. The amplifier provides 8.2 watts of power with 39 dB gain over a frequency band of 1.4 GHz. Nonlinearity analyses of solid-state amplifiers suggest that system performance can be improved significantly by using an FET amplifier. Preliminary investigations reveal that the solid-state amplifiers can be space-qualified and can be expected to replace the TWTA in many communication links in the near future. It is pointed out that with improvements in device technology, the power, bandwidth and efficiency of solid-state amplifiers using FETs can be further improved. With FETs operating at a junction temperature of less than 125 C, solid-state amplifiers are inherently reliable, indicating a ten-year mean time to failure.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Microwave Journal (ISSN 0026-2897); 27; 115
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  • 42
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    Modeling of single-event upset in bipolar integrated circuits (1983)
    In:  Other Sources
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    Publication Date: 2011-08-18
    Description: The results of work done on the quantitative characterization of single-event upset (SEU) in bipolar random-access memories (RAMs) have been obtained through computer simulation of SEU in RAM cells that contain circuit models for bipolar transistors. The models include current generators that emulate the charge collected from ion tracks. The computer simulation results are compared with test data obtained from a RAM in a bipolar microprocessor chip. This methodology is applicable to other bipolar integrated circuit constructions in addition to RAM cells.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Transactions on Nuclear Science (ISSN 0018-9499); NS-30; 4540-454
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  • 43
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    The damage equivalence of electrons, protons, alphas and gamma rays in rad-hard MOS devices (1983)
    In:  Other Sources
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    Publication Date: 2011-08-18
    Description: This paper reports on a study of damage equivalence in rad-hard MOS devices with 100,000 rads (SiO2) capability. Damage sensitivities for electrons of 1, 2, 3, 5, and 7 MeV, protons of 1, 3, 7, 22, and 40 MeV, 3.4-MeV alphas, and Co-60 gammas were measured and compared. Results indicated that qualitatively the same charge recombination effects occurred in hard oxide devices for doses of 100,000 rads (SiO2) as in soft oxide parts for doses of 1 to 4 krads (SiO2). Consequently, damage equivalency or non-equivalency depended on radiation type and energy. However, recovery effects, both during and after irradiation, controlled relative damage sensitivity and its dependency on total dose, dose rate, supply bias, gate bias, radiation type, and energy. Correction factors can be derived from these data or from similar tests of other hard oxide type, so as to properly evaluate the combined effects of the total space environment.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Transactions on Nuclear Science (ISSN 0018-9499); NS-30; 4363-436
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  • 44
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    Test structures for propagation delay measurements on high-speed integrated circuits (1984)
    In:  Other Sources
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    Publication Date: 2011-08-19
    Description: The accuracy of high-speed wafer-level measurements on digital IC's is limited by the probe interface. This limitation strongly encourages the use of built-in on-chip test hardware to reduce the number of critical off-chip high-speed interfaces. A novel synchronous propagation delay test structure is described which will provide accurate parametric data under typical automatic test conditions. Built-in test features added to complex combinational circuits are shown which are useful for delay measurement and which reduce the total number of high-speed I/O connections while still providing acceptable fault coverage in many cases.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Transactions on Electron Devices (ISSN 0018-9383); ED-31; 1072-107
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  • 45
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    Space-charge behavior of 'Thin-MOS' diodes with MBE-grown silicon films (1984)
    In:  Other Sources
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    Publication Date: 2011-08-19
    Description: Basic theoretical and experimental characteristics of a novel 'Thin-MOS' technology, which has promising aspects for integrated high-frequency devices up to several hundred gigahertz are presented. The operation of such devices depends on charge injection into undoped silicon layers of about 1000-A thickness, grown by molecular beam epitaxy on heavily doped substrates, and isolation by thermally grown oxides of about 100-A thickness. Capacitance-voltage characteristics measured at high and low frequencies agree well with theoretical ones derived from uni and ambipolar space-charge models. It is concluded that after oxidation the residual doping in the epilayer is less than approximately 10 to the 16th/cu cm and rises by 3 orders of magnitude at the substrate interface within less than 100 A and that interface states at the oxide interface can be kept low.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Solid-State Electronics (ISSN 0038-1101); 27; 867-880
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  • 46
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    Evaluation of the emission capabilities of Spindt-type field emitting cathodes (1983)
    In:  Other Sources
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    Publication Date: 2011-08-18
    Description: The electron emitting capabilities of Spindt-type field emitting cathodes (FEC) are being studied at the Lewis Research Center, NASA. These cathodes, having 5000 emitting points in a 1 mm diameter, have been shown to be capable of emission current densities of 10 A/sq cm and higher. The purposes of this study are to (1) demonstrate that the cathodes can be processed and used in a tube-type configuration, (2) determine whether, at a sufficiently high current density, the cathode can operate in the space charge mode, and (3) evaluate failure mechanisms in this unique type of electron emitter. FEC's have been tested in a diode configuration, by the use of pulse techniques, up to current densities of 6 A/sq cm and anode potentials of 3000 V. Space charge effects have been observed in the range of 5 A/sq cm as an apparent linear increase of cathode current with anode voltage for a constant emitter-gate potential. Failed cathodes were studied by means of scanning electron microscopy and the major failure modes encountered are attributed to gas evolution, followed by arcing, which destroys either individual emitters or a large segment of the cathode area.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Applications of Surface Science (ISSN 0378-5963); 16; 277-291
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  • 47
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    The containment set approach to digital system tolerance of lightning-induced transient faults (1982)
    In:  Other Sources
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    Publication Date: 2011-08-18
    Description: A fault model and a system model are necessary to assess the tolerance or resilience of a digital system to lightning-induced transients. It is noted that these models are usually developed separately. A new approach is outlined here for this assessment problem which combines the fault and system models into an overall model. With this approach, referred to as the containment set approach, an assessment of the effects of lightning-induced transients can be made in terms of a state transition matrix. This matrix can be generated by means of fault injection experiments. In addition, certain nonredundancy-oriented design alternatives to the achievement of lightning-induced transient tolerance in digital systems are indicated by the containment set approach.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
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  • 48
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    An improved push-pull voltage fed converter using a tapped output-filter inductor (1983)
    In:  Other Sources
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    Publication Date: 2011-08-18
    Description: A new concept of using a tapped output-filter inductor and an auxiliary commutating diode to reduce the likelihood of transformer core saturation in a push-pull, voltage-fed converter is presented. The linearized circuit model and transfer functions are derived with a hybrid approach using both state-space and circuit averaging. Operation of the new converter - including parasitic effects - is discussed, and a design equation for inductor tap ratio is established. It is predicted and experimentally confirmed that the new converter has more symmetrical transformer core operation, and the potential exits for lower transistor turnon current and reduced transistor voltage stress. These benefits reduce switching loss and enhance transistor reliability.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
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  • 49
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    Low-noise 115-GHz receiver using superconducting tunnel junctions (1983)
    In:  Other Sources
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    Publication Date: 2011-08-18
    Description: A 110-118-GHz receiver based on a superconducting quasiparticle tunnel junction mixer is described. The single-sideband noise temperature is as low as 68 + or - 3 K. This is nearly twice the sensitivity of any other receiver at this frequency. The receiver was designed using a low-frequency scale model in conjunction with the quantum mixer theory. A scaled version of the receiver for operation at 46 GHz has a single-sideband noise temperature of 55 K. The factors leading to the success of this design are discussed.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Applied Physics Letters (ISSN 0003-6951); 43; 786-788
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  • 50
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    An improved forward I-V method for nonideal Schottky diodes with high series resistance (1984)
    In:  Other Sources
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    Publication Date: 2011-08-19
    Description: Two methods are described to obtain the value of the series resistance (R) of a Schottky diode from its forward I-V characteristic. The value of R is then used to plot the curve ln(I) versus V sub D (= V - IR) which becomes a straight line even if ln(I) versus V does not. The ideality factor n and the Schottky-barrier height of the diode then follow from the standard procedure. The main advantages of the methods are: (1) a linear regression can be used to calculate the value of R; (2) many data points are used over the whole data range, which raises the accuracy of the results, and (3) the validity of constant R assumption can be checked by the linearity of the ln (I) versus V sub D curve. The methods are illustrated on the experimental data of a real diode.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Transactions on Electron Devices (ISSN 0018-9383); ED-31; 1502
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  • 51
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    Electron trapping in rad-hard RCA IC's irradiated with electrons and gamma rays (1984)
    In:  Other Sources
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    Publication Date: 2011-08-19
    Description: Enhanced electron trapping has been observed in n-channels of rad-hard CMOS devices due to electron and gamma-ray irradiation. Room-temperature annealing results in a positive shift in the threshold potential far beyond its initial value. The slope of the annealing curve immediately after irradiation was found to depend strongly on the gate bias applied during irradiation. Some dependence was also observed on the electron dose rate. No clear dependence on energy and shielding over a delidded device was observed. The threshold shift is probably due to electron trapping at the radiation-induced interface states and tunneling of electrons through the oxide-silicon energy barrier to fill the radiation-induced electron traps. A mathematical analysis, based on two parallel annealing kinetics, hole annealing and electron trapping, is applied to the data for various electron dose rates.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Transactions on Nuclear Science (ISSN 0018-9499); NS-31; 1492-149
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  • 52
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    MOSFET and MOS capacitor responses to ionizing radiation (1984)
    In:  Other Sources
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    Publication Date: 2011-08-19
    Description: The ionizing radiation responses of metal oxide semiconductor (MOS) field-effect transistors (FETs) and MOS capacitors are compared. It is shown that the radiation-induced threshold voltage shift correlates closely with the shift in the MOS capacitor inversion voltage. The radiation-induced interface-state density of the MOSFETs and MOS capacitors was determined by several techniques. It is shown that the presence of 'slow' states can interfere with the interface-state measurements.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Transactions on Nuclear Science (ISSN 0018-9499); NS-31; 1461-146
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  • 53
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    Dose rate effects in MOS microcircuits (1984)
    In:  Other Sources
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    Publication Date: 2011-08-19
    Description: Three read/write random access memories, AM91L24, HM1-6514, and MWS 5114, were subjected to total dose irradiation at three dose rates, with electrical testing after each increment of dosage. Annealing measurements were performed after the radiation tests were completed. The AM91L24 showed a strong dose rate effect and substantial post-irradiation annealing of radiation-induced damage. The dose rate effect was that a lower dose rate produced less net damage than an eqivalent total dose applied at a higher rate. The HM1-6514 showed essentially no dose rate effect and no annealing damage, and the MWS 5114 exhibited a moderate effect with some annealing. It was concluded that dose rate is an important parameter in radiation test procedures for MOS microcircuits and that annealing measurements may be important evaluation aids for such tests.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Transactions on Nuclear Science (ISSN 0018-9499); NS-31; 1348-135
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  • 54
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    Bipolar junction transistor models for circuit simulation of cosmic-ray-induced soft errors (1984)
    In:  Other Sources
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    Publication Date: 2011-08-19
    Description: This paper examines bipolar junction transistor models suitable for calculating the effects of large excursions of some of the variables determining the operation of a transistor. Both the Ebers-Moll and Gummel-Poon models are studied, and the junction and diffusion capacitances are evaluated on the basis of the latter model. The most interesting result of this analysis is that a bipolar junction transistor when struck by a cosmic particle may cause a single event upset in an electronic circuit if the transistor is operated at a low forward base-emitter bias.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Journal of Applied Physics (ISSN 0021-8979); 56; 2964-297
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  • 55
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    A compact high current pulsed electron gun with subnanosecond electron pulse widths (1984)
    In:  Other Sources
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    Publication Date: 2011-08-19
    Description: A magnetically-collimated, double-pulsed electron gun capable of generating electron pulses with a peak instantaneous current of approximately 70 microamps and a temporal width of 0.35 ns (FWHM) has been developed. Calibration is accomplished by measuring the lifetime of the well known 2(1P)-to-1(1S) transition in helium (58.4nm) at a near-threshold electron-impact energy by use of the delayed-coincidence technique.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Journal of Physics E - Scientific Instruments (ISSN 0022-3735); 17; 1008-101
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  • 56
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    Near millimeter wave bandpass filters (1981)
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    Publication Date: 2011-08-18
    Description: The properties of bandpass filters for broadband photometry are reported in the 3-12/cm frequency range. The filters are based on a combination of capacitive grids deposited on thick Mylar substrates and are designed to have very high out-of-band rejection. Low frequencies are blocked by a thick grill that consists of a hexagonal grid of circular holes in a thick metal plate.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Applied Optics; 20; Apr. 15
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  • 57
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    Annual Conference on Nuclear and Space Radiation Effects, 17th, Cornell University, Ithaca, N.Y., July 15-18, 1980, Proceedings (1980)
    In:  Other Sources
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    Publication Date: 2011-08-18
    Description: The conference covered the radiation effects on devices, circuits, and systems, physics and basic radiation effects in materials, dosimetry and radiation transport, spacecraft charging, and space radiation effects. Other subjects included single particle upset phenomena, systems-generated electromagnetic pulse phenomena, fabrication of hardened components, testing techniques, and hardness assurance.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
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  • 58
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    Coherent reference generator phase stability (1981)
    In:  Other Sources
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    Publication Date: 2011-08-18
    Description: Approximate phase stability estimates for the coherent reference generator (CRG) unit in the DSN's Frequency and Timing Subsystem (FTS) are calculated. The method used involves estimating the phase noise introduced by CRG components based upon measurements made in the past on similar components in other parts of the FTS and obtaining the CRG phase noise from the component phase noises. Three estimates of phase stability are calculated: the fractional frequency change for a 5 C step in temperature, the phase noise spectral density, and the Allan standard deviation. It is found from these estimates that the CRG phase stability is better than that of the H-maser physics unit + receiver. Thus, the first step in improving FTS phase stability would be to make improvements in the H-maser physics unit + receiver. These results are corroborated by indirect clock stability estimates calculated from Doppler data.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: The Telecommun. and Data Acquisition Progr. Rept. 42-64; p 222-231
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  • 59
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    Second-generation X/S feedcone: Capabilities layout, and components (1981)
    In:  Other Sources
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    Publication Date: 2011-08-18
    Description: High power (20 kW) S and X-band transmitting systems were added to the Second Generation Common Aperture X/S Feedcone System to demonstrate X and S band uplink/downlink capabilities. Design considerations of new X band components, cone layout, and capabilities are discussed.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: The Telecommun. and Data Acquisition Rept.; p 97-103
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  • 60
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    End-to-end quality measure for transmission of compressed imagery over a noisy coded channel (1981)
    In:  Other Sources
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    Publication Date: 2011-08-18
    Description: For the transmission of imagery at high data rates over large distances with limited power and system gain, it is usually necessary to compress the data before transmitting it over a noisy channel that uses channel coding to reduce the effect of noise introduced errors. Both compression and channel noise introduce distortion into the imagery. In order to design a communication link that provides adequate quality of received images, it is necessary first to define some suitable distortion measure that accounts for both these kinds of distortion and then to perform various tradeoffs to arrive at system parameter values that will provide a sufficiently low level of received image distortion. The overall mean square error is used as the distortion measure and a description of how to perform these tradeoffs are included.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Telecommun. and Data Acquisition; p 63-72
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  • 61
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    Determination of deep level capture cross sections in wide band-gap semiconductors by means of an electron beam (1980)
    In:  Other Sources
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    Publication Date: 2011-08-17
    Description: The paper presents a general theory for the determination of the short circuit current generated by a sinusoidally amplitude-modulated electron beam in the presence of recombination centers with an arbitrary number of charge states. It is shown that a measurement of the coherent phase shift with respect to the incident beam as a function of the modulation frequency of the beam ascertains the magnitudes of electron and hole capture cross sections. The surface exposed to the electron beam must have a negligible surface recombination velocity for the measurements to be unambiguous.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Journal of Applied Physics; 51; Aug. 198
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  • 62
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    Life test studies on tungsten impregnated cathodes (1980)
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    Publication Date: 2011-08-17
    Description: NASA-Lewis Research Center has conducted an ongoing life test program on commercial impregnated tungsten cathodes since 1971. This brief is an update of the information as of December 1979. B-type cathodes, operated at 1100 C have been run in simulated microwave tubes at 2 A/sq cm for more than four years with about 6-percent degradation in current at a constant reference anode voltage. M-type cathodes have been operated for 30,000 h at a cathode temperature of 1010 C and 2 A/sq cm with no degradation in current as a constant reference anode voltage.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Transactions on Electron Devices; ED-27; July 198
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    Semiconductor-ferroelectric nonvolatile memory using anomalous high photovoltages in ferroelectric ceramics (1981)
    In:  Other Sources
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    Publication Date: 2011-08-18
    Description: A small ferroelectric ceramic element is used with an insulating gate transistor and two diodes as an electrically addressed, nonvolatile memory device which is read out nondestructively. The device uses the anomalous photovoltaic effect in ferroelectric ceramics, an effect in which the polarity and magnitude of photovoltages depend on the direction and magnitude of remanent polarization. Experimental results give memory characteristics. The device could be programmed with pulses as short as 200 ns. There is long-time retention of stored data.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Applied Physics Letters; 38; Feb. 1
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  • 64
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    Optically induced bistable states in metal/tunnel-oxide/semiconductor /MTOS/ junctions (1981)
    In:  Other Sources
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    Publication Date: 2011-08-18
    Description: A new switching phenomenon in metal-oxide semiconductor tunnel junction has been discovered. With a sufficiently large negative bias applied to the electrode, incident visible light of intensity greater than about 1 microW/sq cm causes the reverse-biased junction to switch from a low-current to a high-current state. It is believed that hot-electron-induced impact ionization provides the positive feedback necessary for switching, and causes the junction to remain in its high-current state after the optical excitation is removed. The junction may be switched back to the low-current state electrically. The basic junction characteristics have been measured, and a simple model for the switching phenomenon has been developed.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Applied Physics Letters; 38; Jan. 1
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  • 65
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    The millimeter wave super-Schottky diode detector (1981)
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    Publication Date: 2011-08-18
    Description: The 31 and 92 GHz measurements of the superconductor-Schottky diode extended to millimeter wavelengths by a redesign of the semiconductor interface are reported. Diodes were fabricated by pulse electroplating Pb on 2 x 10 to the 19th/cu cm p-Ga-As etched with HCl; a thin Au overplate is deposited to protect the Pb film from degradation and to improve its lifetime. The noise performance was almost ideal at 31 and 92 GHz; it was concluded that this diode is a quantum-limited-detector at 31 GHz, with excessive parasitic losses at 92 GHz.
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  • 66
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    Developing new architectures for the Block 2 VLBI correlator system (1981)
    In:  Other Sources
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    Publication Date: 2011-08-18
    Description: The overall LSI (large-scale integrated circuits) architecture design and current status of the VBLI (very long baseline interferometry) block 2 correlator is addressed. The VBLI correlator algorithms demand a computing system that provides a throughput of hundreds of millions of instructions per second to perform cross-correlation detection for six baselines. The LSI technology lights the way for the computation of complex parallel process and is raising the upper bound of computerization.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: The Telecommun. and Data Acquisition Progr. Rept. 42-64; p 30-40
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  • 67
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    A four-way distribution amplifier for reference signal distribution (1981)
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    Publication Date: 2011-08-18
    Description: A four way distribution amplifier with up to 100 dB isolation and with low phase noise of -140 dBc in a 1 Hz bandwidth 10 Hz from a 100 MHz signal was developed. It is to be used in the stabilized optical fiber distribution system to provide multiple outputs.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Telecommun. and Data Acquisition; p 31-34
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  • 68
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    How to quickly predict the overall TWT and the multistage depressed collector efficiency (1980)
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    Publication Date: 2011-08-17
    Description: The study deals with an empirical, simple formula extracted from a three-dimensional helical-TWT computer program that expresses the lowest energy in a spent beam in terms of beam perveance and electronic efficiency. The formula has a general validity down to 4 - 5 dB below saturation and gives 1 - delta V/V with less than 20% error down to 10 dB below saturation.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Transactions on Electron Devices; ED-27; Mar. 198
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  • 69
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    Activation energies of thermal annealing of radiation-induced damage in n- and p-channels of CMOS integrated circuits (1980)
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    Publication Date: 2011-08-18
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
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  • 70
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    A current access, self-structured, multilayered bubble domain memory (1980)
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    Publication Date: 2011-08-17
    Description: Preliminary experimental results are reported on a self-structured, multilayer bubble memory with buried data layer. Stripe domains are used to move carrier bubbles by magnetostatic coupling. An expression is derived for that coupling as a function of thickness of the GGG separation layer. Experimental values of coupling are given as a function of bias field. An expression for stripe curvature as a function of bias field is derived. The performance of seven different current access stripe propagation circuits is reported.
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  • 71
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    Transient solution for megajoule energy release in a lumped-parameter series RLC circuit (1980)
    In:  Other Sources
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    Publication Date: 2011-08-17
    Description: A method is developed for optimizing the energy release from a megajoule capacitive discharge in a series RLC circuit with an RL load. Both the resistance and inductance of the load are represented by effective values that characterize their behavior during the discharge. Using Kirchhoff's laws, equations utilizing the load impedance and the external circuit impedance are derived for determining the instantaneous load voltage and energy characteristics. A program (ERES) computes and displays the load characteristics and the circuit current. Use of the ERES program allows a designer to perturbate values of the circuit elements in order to produce the desired time distribution for the load energy input.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Journal of Applied Physics; 51; Jan. 198
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  • 72
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    SETI downconverter (1982)
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    Publication Date: 2011-08-18
    Description: The SETI (Search for Extraterrestrial Intelligence) breadboard subsystem was begun in order to develop the technology to efficiently implement a SETI instrument capable of searching wide bandwidth with high resolution. The downconverter covered is the interface hardware between the receiver IF output and ADC used as the input to the spectrum analyzer.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: The Telecommun. and Data Acquisition Rept.; p 1-5
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  • 73
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    The 400-Hertz constant-speed electrical generation systems (1982)
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    Publication Date: 2011-08-18
    Description: Materials illustrating a presentation on 400 Hz constant speed generation systems are presented. The system features are outlined, components and functioning described, and display graphics illustrated.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Langley Research Center Elec. Flight Systems; p 125-146
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  • 74
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    The effects of cooling on delay-time limits in IC's (1984)
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    Publication Date: 2011-08-19
    Description: The effect of cooling as a fundamental limit to delay times in IC's was considered. It appears that the delay time should be decreased at cryogenic temperatures.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: JPL Proc. of the Cold Electronics Workshop; p 70-82
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  • 75
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    Recent developments in semiconductor research (1984)
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    Publication Date: 2011-08-19
    Description: Recent findings drawn from various laboratories focused toward a new understanding of the nature of crystal growth and how impurities are incorporated or excluded from the lattice were considered. From these findings a heuristic approach is given for improving the uniformity and charge carrier concentration of thin semiconductor films. Such improvement is considered essential to achieve respectable yield on large scale integrated circuits. A tentative conclusion is drawn which indicates that if the host compound crystal reactants are provided to the growing crystal surface in a reasonably stoichiometric manner, it is virtually impossible to include impurities into a growing crystal surface held at a sufficiently low temperature; impurities are incorporated into the crystal by gettering action of crystal defects located one and two monlayers beneath the growing surface. Devices in 3-5 semiconductors based on heterojunctions and two dimensional electron gases are noted and reliability concerns are voiced. Alternatives and novel device structures such as truly single crystal high quality silicon on insulator and beta silicon carbide devices are presented.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: JPL Proc. of the Cold Electronics Workshop; p 40-50
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  • 76
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    Cold electronics: An overview (1984)
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    Publication Date: 2011-08-19
    Description: Generally speaking, several roles are seen for low temperatures in electronics: As a means of extracting better performance from existing technology, avoiding expense and delay required for the advances in design or fabrication which would be needed to achieve the same performance at room temperature. As a necessity in the quest for improved performance, to counteract detrimental effects which arises as technology is pushed to extremes. As an opportunity to take advantage of effects made available by low temperature operation, and to develop new devices based on them. The electronic devices and circuits considered are those based on semiconductivity. Superconductive devices and circuits are not included.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Proc. of the Cold Electronics Workshop; p 3-22
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  • 77
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    Stability of multifrequency negative-resistance oscillators (1984)
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    Publication Date: 2011-08-18
    Description: A general criterion is derived for the stability of a negative-resistance oscillator with respect to small perturbations in the operating point. The derivation applies when the oscillator output consists of an arbitrary number of related frequency components, including possible nonharmonic components. Examples are given of the application of the stability criterion to coaxial IMPATT oscillator circuits, with experimental verification of the frequency and output power at theoretically determined stable operating points.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Transactions on Microwave Theory and Techniques (ISSN 0018-9480); MTT-32; 1310-131
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  • 78
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    Single beam synthesis from thinned arrays (1984)
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    Publication Date: 2011-08-18
    Description: Radio astronomers have investigated spatial frequencies and their relationship to apertures with the objective to improve the resolution in radio observations. Welch (1965) has related Fourier transform theory developed for linear communications to aperture design problems, while Fakley (1959) has conducted a comparison between the performances of a time-averaged product array and an intraclass correlator. The present investigation is concerned with an approach which resembles very closely the intraclass correlator system considered by Fakley. A description is presented of a process whereby a thinned array of elements samples selected spatial frequencies from a uniform signal wave front incident on the array. The spatial frequencies are used to generate a set of synthetic spatial frequencies which behave as though they had been sampled by a fully filled array. Beam formation is obtained by summing the set of synthetic spatial frequencies.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Acoustical Society of America, Journal (ISSN 0001-4966); 76; 465-474
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  • 79
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    NASA seeking high-power 60-GHz IMPATT diodes (1984)
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    Publication Date: 2011-08-18
    Description: Recent progress in the development of high-power 60 GHz GaAs IMPATT diodes for communication links with high-data-rate satellites is discussed. One of the advantages of GaAs over Si as the material for the diodes are that GaAs is likely to have a higher output and efficiency than Si despite recent advances in Si technology. It is therefore in GaAs technology that research is currently concentrating. Some of the design strategies of the various companies working on the technology are described, including a pill process, MOCVD growth, and the use of diethy zinc as a dopant. Reliability testing of the diodes will be performed by NASA. Some of the alternatives to solid state amplifiers are discussed, including optical and traveling wave tube technology (TWT).
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Microwaves & RF (ISSN 0745-2993); 23; 100-102
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  • 80
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    Integrating amplifiers using cooled JFETs (1984)
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    Publication Date: 2011-08-18
    Description: It is shown how a simple integrating amplifier based on commercially available JFET and MOSFET switches can be used to measure photocurrents from detectors with noise levels as low as 1.6 x 10 to the -18th A/root Hz (10 electrons/sec). A figure shows the basic circuit, along with the waveform at the output. The readout is completely nondestructive; the reset noise does not contribute since sampling of the accumulated charge occurs between resets which are required only when the stored charge has reached a very high level. The storage capacity ranges from 10 to the 6th to 10 to the 9th electrons, depending on detector parameters and linearity requirements. Data taken with an Si:Sb detector operated at 24 microns are presented. The responsivity agrees well with the value obtained by Young et al. (1981) in the transimpedance amplifier circuit. The data are seen as indicating that extremely low values of NEP can be obtained for integration times of 1 sec and that longer integrations continue to improve the SNR at a rate faster than the square root of time when background noise is not present.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Applied Optics (ISSN 0003-6935); 23; 1308
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  • 81
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    New propulsion components for electric vehicles (1983)
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    Publication Date: 2011-08-18
    Description: Improved component technology is described. This includes electronically commutated permanent magnet motors of both drum and disk configurations, an unconventional brush commutated motor, ac induction motors, various controllers, transmissions and complete systems. One or more of these approaches to electric vehicle propulsion may eventually displace presently used controllers and brush commutated dc motors. Previously announced in STAR as N83-25982
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  • 82
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    Annual Conference on Nuclear and Space Radiation Effects, Gatlinburg, TN, July 18-21, 1983, Proceedings (1983)
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    Publication Date: 2011-08-18
    Description: Topics discussed include radiation effects in devices; the basic mechanisms of radiation effects in structures and materials; radiation effects in integrated circuits; spacecraft charging and space radiation effects; hardness assurance for devices and systems; and radiation transport, energy deposition and charge collection. Papers are presented on the mechanisms of small instabilities in irradiated MOS transistors, on the radiation effects on oxynitride gate dielectrics, on the discharge characteristics of a simulated solar cell array, and on latchup in CMOS devices from heavy ions. Attention is also given to proton upsets in orbit, to the modeling of single-event upset in bipolar integrated circuits, to high-resolution studies of the electrical breakdown of soil, and to a finite-difference solution of Maxwell's equations in generalized nonorthogonal coordinates.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: (ISSN 0018-9499)
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  • 83
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    Single event upset (SEU) of semiconductor devices - A summary of JPL test data (1983)
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    Publication Date: 2011-08-18
    Description: The data summarized describe single event upset (bit-flips) for 60 device types having data storage elements. The data are from 15 acceleration tests with both protons and heavier ions. Tables are included summarizing the upset threshold data and listing the devices tested for heavy ion induced bit-flip and the devices tested with protons. With regard to the proton data, it is noted that the data are often limited to one proton energy, since the tests were usually motivated by the engineering requirement of comparing similar candidate devices for a system. It is noted that many of the devices exhibited no upset for the given test conditions (the maximum fluence and the maximum proton energy Ep are given for these cases). It is believed, however, that some possibility of upset usually exists because there is a slight chance that the recoil atom may receive up to 10 to 20 MeV of recoil energy (with more energy at higher Ep).
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Transactions on Nuclear Science (ISSN 0018-9499); NS-30; 4520-452
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  • 84
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    Recovery of damage in rad-hard MOS devices during and after irradiation by electrons, protons, alphas, and gamma rays (1983)
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    Publication Date: 2011-08-18
    Description: This paper reports on the recovery properties of rad-hard MOS devices during and after irradiation by electrons, protons, alphas, and gamma rays. The results indicated that complex recovery properties controlled the damage sensitivities of the tested parts. The results also indicated that damage sensitivities depended on dose rate, total dose, supply bias, gate bias, transistor type, radiation source, and particle energy. The complex nature of these dependencies make interpretation of LSI device performance in space (exposure to entire electron and proton spectra) difficult, if not impossible, without respective ground tests and analyses. Complete recovery of n-channel shifts was observed, in some cases within hours after irradiation, with equilibrium values of threshold voltages greater than their pre-irradiation values. This effect depended on total dose, radiation source, and gate bias during exposure. In contrast, the p-channel shifts recovered only 20 percent within 30 days after irradiation.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Transactions on Nuclear Science (ISSN 0018-9499); NS-30; 4157-416
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  • 85
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    Test chips for custom ICs - Six kinds of test structures (1982)
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    Publication Date: 2011-08-18
    Description: Microelectronic test chips contain a number of test structures that are used for a variety of purposes in fabricating integrated circuits. For convenience, their use is divided into six groups: layout-rule evaluating, process-parameter extraction, device-parameter extraction, circuit-parameter extraction, initial-fabrication failure analysis, and reliability failure analysis. A given test structure can be used to gather information in a number of these groups. Examples are given here of the kinds of parameters that can be obtained in each of these groups. A table is included summarizing various device failures common to bulk CMOS and indicating failure mechanisms appearing after wafer fabrication and after stress.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Circuits Manufacturing; June 198
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  • 86
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    Distributed control of large space antennas (1983)
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    Publication Date: 2011-08-18
    Description: A systematic way to choose control design parameters and to evaluate performance for large space antennas is presented. The structural dynamics and control properties for a Hoop and Column Antenna and a Wrap-Rib Antenna are characterized. Some results of the effects of model parameter uncertainties to the stability, surface accuracy, and pointing errors are presented. Critical dynamics and control problems for these antenna configurations are identified and potential solutions are discussed. It was concluded that structural uncertainties and model error can cause serious performance deterioration and can even destabilize the controllers. For the hoop and column antenna, large hoop and long meat and the lack of stiffness between the two substructures result in low structural frequencies. Performance can be improved if this design can be strengthened. The two-site control system is more robust than either single-site control systems for the hoop and column antenna.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Proc. of the Workshop on Appl. of Distributed System Theory to the Control of Large Space Struct.; p 225-247
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  • 87
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    A prediction model for bipolar RAMs in a high energy ion/proton environment (1981)
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    Publication Date: 2011-08-18
    Description: A model has been developed which predicts the relative susceptibility of bipolar RAMs to heavy ion and proton upset. During the course of evaluating this model, physical and electrical variations were also evaluated indicating that the minimum internal signal level is the primary upset susceptibility indicator. Unfortunately, all of the physical and electrical variations expected during a normal product development cycle are in direct opposition to improved high-energy particle upset tolerance. Hence, a trade-off between highly susceptible, low power (medium speed) devices must be made against the less susceptible, higher power (high speed) equivalent device, taking into account the systems trade-off with respect to system power, software, error correction procedures and/or circuit redundancy.
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  • 88
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    An advanced, radiation hardened bulk CMOS/LSI technology (1981)
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    Publication Date: 2011-08-18
    Description: An advanced, second generation, bulk, Si-gate CMOS process is described. This process is capable of producing LSI and VLSI parts that are latch-up free and hardened to total dose levels in excess of 2 x 10 to the 5th rad-Si for applications in space and weapons radiation environments. Two memories designed to use this process are also described. Both circuits are 4096-bit, static CMOS RAMs.
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  • 89
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    Investigation for single-event upset in MSI devices (1981)
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    Publication Date: 2011-08-18
    Description: The reported investigation shows that low-power TTL, standard TTL, low-power Schottky, and Schottky devices are all subject to upset by heavy ions. Low-power Schottky was the most sensitive of the device technologies tested. No evidence was found to correlate sensitivity to cosmic rays with any particular device manufacturer. The probability of upset of the logic devices is comparable to that of RAM's on a per-flip-flop basis, based on RAM data obtained by Kolasinski et al. (1979). The testing was performed by subjecting the devices to 120 MeV krypton ions from a cyclotron.
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  • 90
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    Harmonic analysis approach to the 'TunneLadder' - A modified Karp circuit for millimeter-wave TWTA's (1982)
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    Publication Date: 2011-08-18
    Description: A field approach to the summed harmonic analysis of the TunneLadder structure, or modified forward-wave Karp circuit, is developed by combining TM(01) and TE(11) modes. Results suggest the suitability of this structure as a high-impedance, about 1-% bandwidth circuit, millimeter-wave forward-wave-type amplifier that is voltage tunable over about a 5-% frequency range and has excellent power handling ability. Theory gives good agreement with experimental results obtained by Karp in omega-beta dispersion and predicts qualitatively the appearances of the antisymmetric mode discussed and of the so called Hightron mode that was discussed earlier in White, Enderby and Birdsall (1964), and Enderby (1964), in addition to the desired symmetric mode.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Transactions on Electron Devices; ED-29; May 1982
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  • 91
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    Activation energies of thermal annealing of radiation-induced damage in n- and p-channels of CMOS integrated circuits. II (1981)
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    Publication Date: 2011-08-18
    Description: The procedures described by Danchenko et al. (1980) are applied to devices of RCA's Z-process (100,000 rad-hard). A thermal annealing investigation of the Z-process reveals an annealing behavior of the p-channels that is anomalous when compared with the p-channels of the commercial and J-processes. It is noted that the thermal annealing-induced shift of the threshold potential extends far below the original value; this necessitated the development of a new mathematical treatment, the treatment presented in the paper.
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  • 92
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    CMOS RAM cosmic-ray-induced-error-rate analysis (1981)
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    Publication Date: 2011-08-18
    Description: A significant number of spacecraft operational anomalies are believed to be associated with cosmic-ray-induced soft errors in the LSI memories. Test programs using a cyclotron to simulate cosmic rays have established conclusively that many common commercial memory types are vulnerable to heavy-ion upset. A description is given of the methodology and the results of a detailed analysis for predicting the bit-error rate in an assumed space environment for CMOS memory devices. Results are presented for three types of commercially available CMOS 1,024-bit RAMs. It was found that the HM6508 is susceptible to single-ion induced latchup from argon and krypton ions. The HS6508 and HS6508RH and the CDP1821 apparently are not susceptible to single-ion induced latchup.
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    Annual Conference on Nuclear and Space Radiation Effects, 18th, University of Washington, Seattle, WA, July 21-24, 1981, Proceedings (1981)
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    Publication Date: 2011-08-18
    Description: Single event upset phenomena are discussed, taking into account cosmic ray induced errors in IIL microprocessors and logic devices, single event upsets in NMOS microprocessors, a prediction model for bipolar RAMs in a high energy ion/proton environment, the search for neutron-induced hard errors in VLSI structures, soft errors due to protons in the radiation belt, and the use of an ion microbeam to study single event upsets in microcircuits. Basic mechanisms in materials and devices are examined, giving attention to gamma induced noise in CCD's, the annealing of MOS capacitors, an analysis of photobleaching techniques for the radiation hardening of fiber optic data links, a hardened field insulator, the simulation of radiation damage in solids, and the manufacturing of radiation resistant optical fibers. Energy deposition and dosimetry is considered along with SGEMP/IEMP, radiation effects in devices, space radiation effects and spacecraft charging, EMP/SREMP, and aspects of fabrication, testing, and hardness assurance.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
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  • 94
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    Experimental verification of a computational procedure for the design of TWT-refocuser-MDC systems (1981)
    In:  Other Sources
    Details
    Publication Date: 2011-08-18
    Description: A comparison of analytical and experimental results is presented for a high performance dual-mode helix TWT, equipped with multistage depressed collectors (MDC), and operated over conditions ranging from saturation to the linear regime. The computations are carried out with advanced multidimensional computer programs which model the electron beam as a series of disks or rings of charge and follow their trajectories from the RF input of the TWT, through the slow-wave structure, through the refocusing system, to their points of impact in the depressed collector. TWT performance, collector efficiency, and collector current distribution are computed and compared with measurements. Very good agreement is obtained between computed and measured TWT performance and collector efficiencies. The analytical techniques were subsequently applied to the design of a smaller MDC of nearly equal efficiency.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
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  • 95
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    Fabrication of a 16-channel integrated optical data preprocessor (1981)
    In:  Other Sources
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    Publication Date: 2011-08-18
    Description: A 16-channel integrated optical data preprocessor based on a Mach-Zehnder interferometer configuration has been fabricated on a LiNbO3 substrate. The fabrication procedure is reviewed and a detailed discussion of the steps utilized to integrate the individual components is presented. The results of the device testing experiments are also discussed.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
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  • 96
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    Semiconductor optoelectronic devices for free-space optical communications (1983)
    In:  Other Sources
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    Publication Date: 2011-08-18
    Description: The properties of individual injection lasers are reviewed, and devices of greater complexity are described. These either include or are relevant to monolithic integration configurations of the lasers with their electronic driving circuitry, power combining methods of semiconductor lasers, and electronic methods of steering the radiation patterns of semiconductor lasers and laser arrays. The potential of AlGaAs laser technology for free-space optical communications systems is demonstrated. These solid-state components, which can generate and modulate light, combine the power of a number of sources and perform at least part of the beam pointing functions. Methods are proposed for overcoming the main drawback of semiconductor lasers, that is, their inability to emit the needed amount of optical power in a single-mode operation.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Communications Magazine (ISSN 0163-6804); 21; Sept
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  • 97
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    A 20-GHz IMPATT transmitter, summary (1983)
    In:  Other Sources
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    Publication Date: 2011-08-18
    Description: A three stage IMPATT diode amplifier capable of a 16 W CW output and a 2 dB bandwidth of 117 MHz was developed. On the component side, high performance circulators with a 0.2 dB insertion loss and bandwidth of 5 GHz were fabricated. State of the art GaAs IMPATT diodes incorporating diamond heat sink and double Read doping profile were also developed. The diodes are capable of a 2.5 W CW output. A few diodes achieved power outputs as high as 3 W. On the circuit side, high gain (up to 12 dB per stage) single diode, multituned circuits capable of 2 GHz and 930 MHx bandwidth were developed as the first and second stages, respectively, of the amplifier. A 12 diode waveguide cavity combiner was developed as the output stage. The output stage utilized commercially available single drift GaAs IMPATT diodes.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: A 20-GHz IMPATT Tansmitter 1; 126 p
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  • 98
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    Radiation effects on MOS devices - dosimetry, annealing, irradiation sequence, and sources (1983)
    In:  Other Sources
    Details
    Publication Date: 2011-08-18
    Description: This paper reports on some investigations of dosimetry, annealing, irradiation sequences, and radioactive sources, involved in the determination of radiation effects on MOS devices. Results show that agreement in the experimental and theoretical surface to average doses support the use of thermo-luminescent dosimeters (manganese activated calcium fluoride) in specifying the surface dose delivered to thin gate insulators of MOS devices. Annealing measurements indicate the existence of at least two energy levels,,s or a activation energies, for recovery of soft oxide MOS devices after irradiation by electrons, protons, and gammas. Damage sensitivities of MOS devices were found to be independent of combinations and sequences of radiation type or energies. Comparison of various gamma sources indicated a small dependence of damage sensitivity on the Cobalt facility, but a more significant dependence in the case of the Cesium source. These results were attributed to differences in the spectral content of the several sources.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Transactions on Nuclear Science (ISSN 0018-9499); NS-30; June 198
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  • 99
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    Tubes in space - Very much alive (1983)
    In:  Other Sources
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    Publication Date: 2011-08-18
    Description: Some advantages of TWTs over SSDs are discussed. Wideband TWTs have been developed which can produce 20 W of RF power at 20 GHz with 40 percent efficiency, a figure three or four times that available from SSDs such as FETs. The basic performance of TWTs exceeds that of SSDs for any given bandwidth and frequency. SSDs are transit time limited, and their performance deteriorates fundamentally as the reciprocal of the square of the operating frequency. Power limits for SSDs have been reached or are quickly being approached. Free electron devices such as tubes have an efficiency advantage because electrons in the vacuum travel faster than bulk charges in SSDs. Combined SSD devices are prone to burnout and incur penalties due to the need to dissipate heat. TWTs have a 6.7:1 advantage in radiator area ratio. Recent progress in TWT technology has produced a tenfold increase in CW output power, doubled to quadrupled the efficiency, and pushed frequency ranges into the terahertz region, orders of magnitude beyond the SSD cutoff.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Microwaves & RF; 22; Mar. 198
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  • 100
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    A high-speed digital signal processor for atmospheric radar, part 7.3A (1984)
    In:  CASI
    Details
    Publication Date: 2016-06-07
    Description: The Model SP-320 device is a monolithic realization of a complex general purpose signal processor, incorporating such features as a 32-bit ALU, a 16-bit x 16-bit combinatorial multiplier, and a 16-bit barrel shifter. The SP-320 is designed to operate as a slave processor to a host general purpose computer in applications such as coherent integration of a radar return signal in multiple ranges, or dedicated FFT processing. Presently available is an I/O module conforming to the Intel Multichannel interface standard; other I/O modules will be designed to meet specific user requirements. The main processor board includes input and output FIFO (First In First Out) memories, both with depths of 4096 W, to permit asynchronous operation between the source of data and the host computer. This design permits burst data rates in excess of 5 MW/s.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: International Council of Scientific Unions Middle Atmosphere Program: Handbook for MAP. Vol. 14; p 280-284
    Format: application/pdf
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