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    High-efficiency V-band GaAs IMPATT diodes (1984)
    In:  Other Sources
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    Publication Date: 2011-08-18
    Description: Double-drift GaAs IMPATT diodes were designed for V-band frequency operations and fabricated using molecular-beam epitaxy. The diodes were fabricated in two configurations: (1) circular mesa diodes with silver-plated (integrated) heat sinks: (2) pill-type diodes bonded to diamond heat sinks. Both configurations utilized a miniature quartz-ring package. Output power greater than 1 W CW was achieved at V-band frequencies from diodes on diamond heat sinks. The best conversion efficiency was 13.3 percent at 55.5 GHz with 1 W output power.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Electronics Letters (ISSN 0013-5194); 20; 212-214
    Format: text
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