Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
68 (1996), S. 3314-3316
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We describe a new GaN film growth method employing a supersonic jet of nitrogen atoms and a gallium effusion cell. The nitrogen atoms were generated by exciting a 1% nitrogen in helium mixture with a radio frequency discharge. X-ray diffraction and in situ reflection high-energy electron diffraction indicate that GaN films grown on sapphire (0001) were single crystalline and epitaxial with a rough surface morphology. A GaN growth rate of approximately 0.65 μm/h was measured, independent of substrate temperature over the range of 600–750 °C. However, the crystalline quality of the film increases markedly with increasing wafer temperature. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.116042
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