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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (47)
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  • Physics  (47)
  • 1
    Electronic Resource
    Electronic Resource
    Laser-induced free-carrier absorption in Si single crystal (1984)
    Springer
    Applied physics 33 (1984), S. 107-111 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 79.20 ; 81
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The transmitted energy density in thin single Si crystal, wafers is measured atλ=1.06 μm as a function of the incident energy density for a Nd laser pulse of 30 ns duration. Non-linear effects begin to become important at about 0.3 J/cm2. The contribution due to free-carriers is separated from the interband one by using measurements made at low energy density and at different sample temperatures in the 20°–150 °C range. The time dependence of the free-carrier concentration and of the lattice temperature is computed for different values of the Auger constant. The experimental data in the 0.2–2.5 J/cm2 energy density range are fitted with an Auger constant of 10−30 cm6s−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617616
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  • 2
    Electronic Resource
    Electronic Resource
    Surface channeling of swift light ions (1984)
    Springer
    Applied physics 33 (1984), S. 121-131 
    Details
    ISSN: 1432-0630
    Keywords: 79.20 ; 78.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A fast computer code is developed to provide information about the trajectories of swift light particles incident on crystalline targets under surface channeling conditions. The approximations used in the model are tested by comparison of trajectory calculations with the MARLOWE simulation program. The simulation of experimental energy distributions allows discussing various inelastic energy loss models for the interaction of 150 keV protons with a nickel surface. The results suggest that plasmon excitations are not sufficient to account for the measured energy losses. It is found that the Oen-Robinson formula, including inelastic energy losses by single electron excitations in dense materials reasonably well applies to the reflection of light ions from metallic surfaces in channeling conditions. The measured light intensity emitted from 200 keV He+ reflected ions in various directions close to compact atomic surface rows is compared with the calculated reflection coefficient. The results suggest that most of the particles reflected in ionic state do not penetrate the target surface. Detailed comparison between light emission measurements and calculated reflection intensities, however, requires accurate modelling of the surface topography as well as of the deexcitation mechanisms involved in the surface reflection of light ions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617618
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  • 3
    Electronic Resource
    Electronic Resource
    Formation of a metallic layer from individual atoms (1984)
    Springer
    Applied physics 33 (1984), S. 213-225 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Adsorption of copper, gold and beryllium on (110), (100), and (211) single-crystal planes of tungsten leads to essentially different work-function changes. It is known from numerous investigations of alkali-metal adsorption on metal substrates that the work-function variation reflects the electronic processes occurring during the formation of the adlayer. It is obvious that copper, gold and beryllium adsorption is accompanied by a wide variety of physical processes different from those appearing in alkali-metal adsorption. The existing experimental data concerning work-function changes induced by copper, gold and beryllium adsorption are compiled. A model is developed, which may explain these changes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00614661
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  • 4
    Electronic Resource
    Electronic Resource
    TEM image contrast from antiphase domains in GaAs: Ge(001) grown by MBE (1984)
    Springer
    Applied physics 34 (1984), S. 231-236 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Antiphase domains occur in thin GaAs epitaxial films grown on Ge(001) by molecular beam epitaxy. The domains have been imaged by transmission electron microscopy using 200-type reflections in dark field. The carefully chosen imaging conditions with convergent illumination ensure that doubly diffracted beams from a pair of first order Laue zone discs contribute to the singly diffracted 200-type beams. The three Bragg reflections may add in or out of phase to give domains in either light or dark contrast depending on their polarity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616577
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  • 5
    Electronic Resource
    Electronic Resource
    Characterisation of the interface between GaAs: Cr substrates andn-type epitaxial GaAs layers by infrared multiple interference analysis (1984)
    Springer
    Applied physics 35 (1984), S. 27-34 
    Details
    ISSN: 1432-0630
    Keywords: 07.65G ; 42.85 ; 68.48 ; 68.55 ; 73.60F ; 78.30 ; 78.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Infrared reflectivity measurements on vapour phase grownn-GaAs epitaxial layers (n=7×1016...5×1018 cm−3) deposited on semi-insulating GaAs:Cr substrates show interference structures whose strength cannot be explained by the interference pattern of a simple two layer system. Assuming a third very thin (0.4 μm) interfacial layer it is possible to describe the experimental results. For Te doping the carrier concentration in the interfacial film is higher than in the volume of the epitaxial layer; it is lower for Sn doping. The results of this nondestructive optical method were confirmed by conductivity measurements while etching the sample. The origin of the interfacial layer is discussed in terms of non-steady state conditions at the beginning of the epitaxial growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620296
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  • 6
    Electronic Resource
    Electronic Resource
    Strain analysis and optical characterization of LPE InGaAsP laser-confining layers (1982)
    Springer
    Applied physics 27 (1982), S. 213-218 
    Details
    ISSN: 1432-0630
    Keywords: 71.25 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The compositional dependence of lattice parameters and strains induced by lattice mismatch of liquid phase epitaxial (LPE) In1−x Ga x AS y P1−y /InP with smallx andy are studied. The measured elastic strain is proportional to the lattice mismatch within certain critical limits; as much as ∼78% of the mismatch strain is found to be accommodated elastically under both compression and tension. The near-band edge absorption and photoluminescence measurements yield the free electron and hole recombination probability and the compositional dependence of the energy gap at low temperature. The influence of the lattice mismatch on the optical properties is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00619082
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  • 7
    Electronic Resource
    Electronic Resource
    Au gettering by Ne and Ar implantation in silicon (1984)
    Springer
    Applied physics 35 (1984), S. 119-124 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 66 ; 85.30 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The gettering efficiency for Au induced by Ne+ and Ar+ implantation has been studied. The depth distribution of gettered Au as a function of annealing temperature and dose of implanted Ne+ and Ar+ ions are presented. The experiment shows that the maximum efficiency of gettering occurs when the implantation doses are comparable with amorphization dose.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620641
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  • 8
    Electronic Resource
    Electronic Resource
    A model of sputtering from spikes (1982)
    Springer
    Applied physics 28 (1982), S. 175-178 
    Details
    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A simple model of sputtering from spikes is described based upon the solution of a general heat conduction equation for spherical symmetry. The model accounts for many anomalies observed in energy spectra of sputtered atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617983
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  • 9
    Electronic Resource
    Electronic Resource
    Electron mobility in compensated VPE GaAs films (1980)
    Springer
    Applied physics 23 (1980), S. 37-40 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 73.60 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Electron Hall mobilities were measured on a series of intentionally compensated vapor phase epitaxy (VPE) GaAs layers. Using Sn and Zn as dopants, compensation ratiosK=(ND+NA)/(ND-NA) as high as 50 were obtained. Already for samples with the lowestK values the 300 K mobilities are higher than the 77 K values. In the range 20〈T〈100 [K] the data may be represented by μ∼T α with α increasing from 0.6 to 1.1 with compensation. The experimental μ values are smaller than those predicted from current models in all cases. It appears that scattering at ionized impurities is the dominant process also at temperatures well above 77 K, and that this scattering process is quantitatively underestimated in current models.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00899568
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  • 10
    Electronic Resource
    Electronic Resource
    Planar optical coupling elements for multimode fibers with two-step ion migration process (1981)
    Springer
    Applied physics 24 (1981), S. 61-63 
    Details
    ISSN: 1432-0630
    Keywords: 42.82 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An electric field assisted two-step ion migration process in soda-lime glass plates has been used to produce optical couple waveguides with semicircular and circular cross sections. The radius and the numerical aperture of the guides are approximately the same as those of the graded index multimode fibers. A new coupler structure, the edge reflecting element, which could be used as an integrated demultiplexer in wavelength division multiplexing, has been fabricated. The loss spectrum of the waveguides is analyzed and a theoretical treatment of the ion concentrations is given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00900399
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  • 11
    Electronic Resource
    Electronic Resource
    On the inelastic-loss approximation for keV-energy ion collisions in solids (1981)
    Springer
    Applied physics 24 (1981), S. 121-126 
    Details
    ISSN: 1432-0630
    Keywords: 61.80 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Inelastic energy-loss in a single collisionT e and related stopping cross-sectionT e based on the Firsov model are evaluated for different screening functions in the elastic interaction potentials. Various approximations ofT e andS e for keV-ions in solids are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00902267
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  • 12
    Electronic Resource
    Electronic Resource
    Frequency breakdown in semiconductors (1980)
    Springer
    Applied physics 22 (1980), S. 95-99 
    Details
    ISSN: 1432-0630
    Keywords: 77.20 ; 79.20 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The effect of the frequency of the applied voltage on the breakdown of semiconductors is investigated. Unlike earlier observations, our experiment yields, in some cases, a breakdown voltage versus frequency curve which is similar in nature to the high-frequency breakdown characteristics in gas devices wherein the breakdown voltage shows a minimum at a certain frequency. A possible theoretical explanation for the above behaviour of semiconductor devices based on dielectric heating is given, which is in fair agreement with the observations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00897939
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  • 13
    Electronic Resource
    Electronic Resource
    Sputtering of Cu and Zn atoms from elemental and alloy targets (1980)
    Springer
    Applied physics 23 (1980), S. 89-92 
    Details
    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The energy distributions of Cu and Zn atoms sputtered from elements and CuxZn1-x alloys (x=0.80, 0.24) with a 6 keV Ar+ beam have been measured. It was found that the collision-cascade theory properly described the flux of sputtered atoms. From the spectra the binding energies of Cu and Zn atoms in the elemental and alloy surfaces were determined. The collision-cascade theory and the experimentally adjusted values of the binding energies allowed for calculation of the total and partial sputtering yields, and the equilibrium surface composition of the ion bombarded alloys.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00899575
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  • 14
    Electronic Resource
    Electronic Resource
    Dynamics of laser crystallization in amorphous Ge films (1981)
    Springer
    Applied physics 25 (1981), S. 91-93 
    Details
    ISSN: 1432-0630
    Keywords: 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract In situ time- and space-resolved transmission measurements have been used to investigate the crystal growth during laser irradiation of amorphous Ge films. For dwell times longer than 5 ms, microcrystallization processes comparable to conventional thermal annealing are observed, whereas for irradiation times shorter than 5 ms, shell like crystallites, 20 μm long, are obtained. The results from the pulsed measurements agree with corresponding experiments performed under cw-annealing conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00901278
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  • 15
    Electronic Resource
    Electronic Resource
    Computer simulation of fast recoil ejection from single crystal surfaces (1981)
    Springer
    Applied physics 25 (1981), S. 239-248 
    Details
    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The computer simulation program MARLOWE is used to analyze the most probable surface recoil processes leading to ejection of atoms from (001) gold surfaces subsequent to the irradiation with 20 keV argon atoms. The occurence of two-and threedimensional mechanisms resulting from high-energy recoils involving one and two atomic layers is discussed for atoms ejected in a direction parallel to the plane of incidence. Generally, a close correspondence is found between the mechanisms involved and the features in the energy distributions. The occurence of direct and deflected recoils is confirmed, as well as mechanisms involving the generation of displacements in the two first atomic layers. The dependence of these mechanisms on the conditions of incidence and the ejection direction is investigated. It is suggested that three-dimensional effects, although dominating, mainly contribute to the background in the energy distributions. The intensities in the features in the energy distributions were found to be strongly influenced by shadowing; affecting both the one-and two-layer processes. The influence of thermal vibrations, surface defects and impurities is briefly examined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00902977
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  • 16
    Electronic Resource
    Electronic Resource
    Depth of origin of sputtered atoms (1981)
    Springer
    Applied physics 25 (1981), S. 307-310 
    Details
    ISSN: 1432-0630
    Keywords: 79.20 ; 68.55 ; 61.80 ; 34
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Estimates are given for the distribution of the depth of origin of sputtered atoms in the low-fluence limit, as well as the corresponding distribution of atoms sputtered into a given energy interval. The former distribution is well described by an exponential profile, with the characteristic depth being consistent with previous results. The latter distribution is characterized by an energy-dependent depth scale and a shape that varies from exponential at low sputtered-atom energies to inverse-power form at higher energies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00902988
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  • 17
    Electronic Resource
    Electronic Resource
    Trapping and reflection coefficients for3He in Ni at oblique incidence (1983)
    Springer
    Applied physics 31 (1983), S. 37-44 
    Details
    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The areal density and the depth distribution of3He trapped in Ni as a function of the bombarding fiuence was measured in the energy range of 1–25 keV and at angles of incidence between 0 and 85° using nuclear reaction analysis. At fluences below saturation a linear relation is found between the areal density and the fiuence. From its slope the trapping and reflection coefficients can be determined. The experimental data for trapping and reflection coefficients and for the depth profiles were compared with computer simulation results from the TRIM program. To reduce uncertainties in the absolute values of the experimental trapping coefficients, they were normalized to the TRIM values at normal incidence. The dependence of the measured reflection coefficient on the angle of incidence between 0 and 80° shows good agreement with the calculated data for incident energies from 3 to 25 keV, but for 1 keV the measured reflection coefficients are higher than the calculated ones.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617186
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  • 18
    Electronic Resource
    Electronic Resource
    Core electron excitation spectra of diamond, graphite, and glassy carbon (1984)
    Springer
    Applied physics 34 (1984), S. 35-39 
    Details
    ISSN: 1432-0630
    Keywords: 79.20 ; 71.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Low-energy electron energy loss spectra in theC(1s) core electron excitation region have been measured in diamond, graphite and glassy carbon in the non-differentiated form. The background subtractedN(E) spectrum has been proved to reflect the density-of-states (DOS) of the conduction band well, and the conduction band structures of these materials have been elucidated. The energy positions of the symmetry points in their conduction bands have been determined from the second-derivative spectra, which were obtained by numerical differentiation of the measuredN(E) spectra.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617572
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  • 19
    Electronic Resource
    Electronic Resource
    Dynamic RHEED observations of the MBE growth of GaAs (1984)
    Springer
    Applied physics 34 (1984), S. 179-184 
    Details
    ISSN: 1432-0630
    Keywords: 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Detailed measurements have been made of the specular beam intensity in RHEED patterns from static and growing GaAs surfaces. The basic parameters investigated were substrate temperature and electron beam azimuth. The results have provided further understanding of growth dynamics and surface disorder, respectively. There is a significant trend away from two-dimensional growth at the higher temperatures, which also correspond to more Ga-rich surface structures. Conversely, surface disorder is apparently greater during growth at the lower temperatures, where the structure is As-rich. The static As-stable 2×4 surface is, however, the most ordered and the most closely two-dimensional. It has also been shown that ordered, two-dimensional growth can be initiated from excess Ga adatom populations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616915
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  • 20
    Electronic Resource
    Electronic Resource
    Energy distributions of low energy H ions backscattered from graphite, stainless steel, and molybdenum (1982)
    Springer
    Applied physics 27 (1982), S. 263-268 
    Details
    ISSN: 1432-0630
    Keywords: 61.80 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Energy distributions of H+ and H− backscattered from graphite, stainless steel and molybdenum were measured for low incident beam energies (150∼1500 eV). The energy distributions of H− resembled that of H+, while the intensity ratio of H− to H+ varied from material to material and with the incident proton energy. A peak in the energy distribution moved to the “cutoff” energy with decreasing incident energy, which can be attributed to an increase in nuclear stopping cross section and a decrease in electronic stopping cross section. The ratio of the peak energy to the incident energy is related to the reduced energy ɛ of incident beam independent of target materials in the measured region (0.03〈ɛ〈 3.3).
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    URL: http://dx.doi.org/10.1007/BF00619090
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  • 21
    Electronic Resource
    Electronic Resource
    On the fluence dependence of the sputtering yield for low-energy noble gas ions (1982)
    Springer
    Applied physics 29 (1982), S. 133-139 
    Details
    ISSN: 1432-0630
    Keywords: 79.20 ; 68.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The fluence dependence of the sputtering yield has been studied on amorphous silicon under uhv conditions with 0.5 to 5keV Ar+ using the KARMA technique (Kombinierte Auger/Röntgen Mikro-Analyse). It allows to measure simultaneously the surface composition, the differential sputtering yield, and the total amount of implanted gas. For all energies, the yield increases initially and reaches saturation after the removal of a layer the thickness of which is closely correlated to the ion range. Gas implantation as a cause for these fluence effects can be ruled out by quantitative analysis. The relative yield increase is found to be larger for low energies than for higher ones. Both these findings can be qualitatively explained by a simple damage collection model.
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    URL: http://dx.doi.org/10.1007/BF00617769
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  • 22
    Electronic Resource
    Electronic Resource
    Controlled doping of rf sputtered germanium films (1984)
    Springer
    Applied physics 34 (1984), S. 117-121 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Germanium films have been rf sputter deposited on a variety of substrates. A new techniques has been developed to control doping concentrations of the films at predetermined levels for bothp-type as well asn-type films. The hole concentrations of these films could be varied from 1015 to 2×1018/cm3 while the electron concentrations could be varied from 1015 to 5×1017/cm3 using this technique. Transmission electron microscope studies have been made to study the crystalline quality of the films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00614763
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  • 23
    Electronic Resource
    Electronic Resource
    Growth kinetics of Si-molecular beam epitaxy (1982)
    Springer
    Applied physics 28 (1982), S. 129-135 
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    ISSN: 1432-0630
    Keywords: 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Growth mode, surface morphology, crystal perfection and growth rate of siliconmolecular beam epitaxy films were observed as function of temperature (450°–950°C), silicon flux density (8×1014−8×1015cm2/s) and surface orientation (111, 110, 100). Within the varied parameters growth proceeds by the two-dimensional growth mode via the lateral motion of atomic steps originating from the slight misorientation of commercially available substrates (typically 0.25°). Single crystalline films with high lattice perfection and smooth surfaces result from this growth mode. The growth rate — linearly dependent on Si-flux density and independant of temperature and orientation — indicates a condensation coefficient near unity. An atomic step flow model on the basis of the Burton-Cabrera-Frank theory explains this behaviour by mobile adatoms with low activation energy of diffusion.
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    URL: http://dx.doi.org/10.1007/BF00617144
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  • 24
    Electronic Resource
    Electronic Resource
    Energy and spatial redistributions of the particle flux resulting from its interaction with the scattering center (1982)
    Springer
    Applied physics 28 (1982), S. 189-194 
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    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Energy and intensity distributions of both projectiles and recoil atoms on the plane behind the scattering center at finite distance are calculated for different projectile-to-target mass ratio and different projectile energies. The projectile energy and intensity have been found to be double-valued or three-valued functions of the distance from the collision epicenter. At the same time, the recoil energy and intensity have proved to single-valued and double-valued functions of the distance from the collision epicenter for parallel and divergent projectile fluxes, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617985
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  • 25
    Electronic Resource
    Electronic Resource
    Al reaction with SiO2 an auger electron spectroscopy and energy loss spectroscopy study (1982)
    Springer
    Applied physics 28 (1982), S. 247-250 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 73.60 ; 79.20 ; 82.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Evidence for a reaction between aluminium and SiO2 film is presented using Auger electron spectroscopy (AES) and low-energy electron-loss spectroscopy (ELS) techniques. This reaction is studied “in situ” during the manufacture of metal insulator semiconductor devices (MIS), under ultra-high vacuum conditions (UHV). A reduction of the SiO2 film upon aluminization occurs, even at room temperature, giving rise to a complex interface.
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    URL: http://dx.doi.org/10.1007/BF00618702
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  • 26
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    Brightness enhancement of slow positron beams (1980)
    Springer
    Applied physics 23 (1980), S. 189-191 
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    ISSN: 1432-0630
    Keywords: 78.70 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The brightness of slow positron beams can be enhanced significantly by repeated stages of moderation, acceleration and focusing. Presently available data suggest that the source spot area should decrease by 10−4 after each stage with only a modest loss of intensity. Beams with very small angular divergence, which could be made with this technique, would be useful for characterizing surfaces by positron diffraction and microscopy. Using such beams it is possible to envision the study of new exotic systems such as thee +-e − plasma and the positronium molecule.
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    URL: http://dx.doi.org/10.1007/BF00899716
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  • 27
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    Optical waveguides on SiO2 substrates prepared by Pb−Si counterdiffusion (1980)
    Springer
    Applied physics 21 (1980), S. 159-162 
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    ISSN: 1432-0630
    Keywords: 42.82 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Surface layers of the optimal composition of PbO0.5SiO2 0.5 were prepared on fused quartz substrates by Pb-Si counterdiffusion and their properties were studied experimentally. Prism coupling experiments have shown that these layers can be used as low-mode optical waveguides of good quality.
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    URL: http://dx.doi.org/10.1007/BF00900678
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  • 28
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    A search for a thermal spike effect in sputtering (1983)
    Springer
    Applied physics 30 (1983), S. 83-86 
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    ISSN: 1432-0630
    Keywords: 79.20 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The temperature dependence of the sputtering yield was measured for lOOkeV per atom bombardment of silver with molecular and atomic antimony ions. No exponential increase of the yield was found in the temperature range from 25° to 775 °C, although a pronounced nonlinear effect is observed when the yield of these projectiles is compared,Y(Sb 2 + )≈ 1.5×[2Y(Sb+)]. We conclude that there is no influence of the lattice temperature on collision spikes.
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  • 29
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    Low-power multi-pulse laser annealing of α-Ge (1983)
    Springer
    Applied physics 30 (1983), S. 161-167 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract In this paper we want to show by means of Reflection High Energy Electron Diffraction (RHEED) techniques that the recrystallization processes taking place on amorphous germanium films irradiated with low-power superimposed ruby laser pulses occur gradually. Furthermore, in implanted α-Ge films the amorphous-crystalline front moves from the surface of the specimen towards the substrate, while the opposite occurs for glow-discharge deposited films. Moreover, electron microscope observations carried out with a double-stage carbon replica technique at different depths in the specimen show that defect migration is one of the competitive mechanisms in low-power laser annealing.
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    URL: http://dx.doi.org/10.1007/BF00620535
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  • 30
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    Thresholds for impact ionisation in InSb at 77K (1981)
    Springer
    Applied physics 26 (1981), S. 157-163 
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    ISSN: 1432-0630
    Keywords: 72.20 ; 72.40 ; 79.20
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The thresholds in energy for 5 different impact ionisation processes in InSb at 77K were calculated on the basis of a critical review of the available bandstructure data for largerk values. An accurate threshold value of 243 meV ± a few meV is given for the main process. It is shown that production of light holes by impact ionisation is highly improbable. It is suggested that double ionisation and light hole initiated ionisation may be equally important in interpreting quantum efficiency data. Impact ionisation by L-band electrons may contribute significantly to the avalanche in Gunn domains, explaining the rapid quenching of the latter.
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    URL: http://dx.doi.org/10.1007/BF00614750
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  • 31
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    Trapping and reflection coefficients for deuterium in graphite at oblique incidence (1984)
    Springer
    Applied physics 33 (1984), S. 265-268 
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    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Trapping and particle reflection coefficients for 0.4–10keVD on graphite have been measured for angles of incidence 0≦α≦85° by determining the areal density of implanted D as a function of the implanted fluence. The experimental data are compared to computer calculations with the TRIM-program. The agreement between measurement and calculation is good.
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  • 32
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    Depth profiling by ion-beam spectrometry (1982)
    Springer
    Applied physics 27 (1982), S. 183-195 
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    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A procedure is developed for determining the stoichiometry of a sample as function of depth from ion-beam analysis energy spectra. The approach is in principle equally applicable to back scattering experiments, experiments involving nuclear reactions with known cross sections and experiments combining these techniques. The procedure is especially suitable for routine computer evaluation of energy spectra. It is more straightforward and/or involves less rigid assumptions and approximations than alternative approaches. If all elemental signals are measured, an accurate beam dose is not needed. The limitations are basically those inherent to ion beam analysis in general.
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    URL: http://dx.doi.org/10.1007/BF00619079
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  • 33
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    On the velocity distribution of excited Fe-atoms by sputtering of iron (1982)
    Springer
    Applied physics 29 (1982), S. 53-55 
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    ISSN: 1432-0630
    Keywords: 79.20 ; 32.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract From the velocity distribution of excited sputtered particles detailed information on the excitation process can be obtained. In the present paper the first direct measurement of velocity distribution of excited atoms sputtered from a metal target is presented. The irradiation of the Fe-target was performed with 10keV Ar+-ions. The sputtered atoms were detected using pulsed laser induced fluorescence (LIF). The sputtered Fe atoms in the metastable statea 5 F 5 at 0.86 eV shows a much broader distribution, than found for the ground-state atoms, but no energy threshold, implied in the statistical excitation models, was found.
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    URL: http://dx.doi.org/10.1007/BF00632425
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  • 34
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    A study of electronic states near the interface in ferroelectric-semiconductor heterojunction prepared by rf sputtering of PbTiO3 (1982)
    Springer
    Applied physics 28 (1982), S. 161-166 
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    ISSN: 1432-0630
    Keywords: 73.20 ; 73.40 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Interface states in the ferroelectric-semiconductor junction have been investigated from analyses of DLTS andC-V data. Two trap levels are located at 0.21 and 0.36 eV below the conduction band near the silicon side of the interface in the MFS (Metal-Ferroelectric-Semiconductor) structure. The interface states density has been drastically reduced by putting an oxide layer between ferroelectric and semiconductor with certain heat treatment in H2 atmosphere at 500 °C. It has been found that the MFMOS (Metal-Ferroelectric-Metal-Oxide-Semiconductor) structure shows the least interface states density (less than 1011cm−2eV−1) with the maximal dielectric constant of PbTiO3 thin films.
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  • 35
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    Distribution and heat-treatment migration studies of Cr implanted GaAs by SIMS (1980)
    Springer
    Applied physics 23 (1980), S. 21-24 
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    ISSN: 1432-0630
    Keywords: 65 ; 68 ; 79.20
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Depth profiles of 190 keV Cr implanted-GaAs have been measured by SIMS analysis. The as-implanted Cr profiles are approximately Gaussian with good agreement between theory and experiment on the projected range. A fast migration of Cr is observed after heat treatment under encapsulation, and even as soon as the silicon nitride film is deposited. There is no evidence for Cr precipitation, even in the case of the largest implanted dose (1015 cm−2).
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  • 36
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    Experimental setup for transmission channeling of MeV ions to study edge dislocations (1980)
    Springer
    Applied physics 21 (1980), S. 47-53 
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    ISSN: 1432-0630
    Keywords: 29 ; 34 ; 35 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An experimental facility was built where thin metal (Ta) crystals, with known thickness, could be studied by transmission channeling of MeV ions. The details of obtaining a faint beam (1.5–3.6 MeV) of constant flux (±1%) on the target and normalization of the spectrum of forward scattered particles have been discussed with merits and demerits of various setups used. Preliminary experimental results are reported for measuring dechanneling coefficients from edge dislocations produced by cold work, using H+ ions. The H+ stopping power for Ta in various planar channels and random direction are estimated and using those, it is shown possible to use the setup for thickness measurements of thin crystal films.
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  • 37
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    Electrical and photovoltaic properties of Cd1−x Zn x S/p-GaAs heterojunctions (1980)
    Springer
    Applied physics 21 (1980), S. 83-90 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 84.60 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Cd1−x Zn x S/p-GaAs heterojunctions for solar cell applications have been prepared by growing single crystal Cd1−x Zn x S epitaxial layers on (111)GaAs substrates through a vapour phase chemical transport method using the close-spaced geometry and H2 as a transport agent. Electrical and photovoltaic properties of the heterojunctions have been investigated and discussed in connection with the main features of the growth technique. AM1 power conversion efficiencies up to 6.2% have been measured and possible improvements have been examined.
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  • 38
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    Investigations of near region of surface of soda-lime-silica glass and lithium-silica glass with secondary ion mass spectrometry (1980)
    Springer
    Applied physics 22 (1980), S. 233-236 
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    ISSN: 1432-0630
    Keywords: 79.20 ; 81
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Investigations on the layers near the surface of different glasses by means of secondary ion mass spectrometry are described. Both enrichment- and depletion zones can be demonstrated. The results are discussed on the basis of the model on corrosion behaviour by Hench.
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    URL: http://dx.doi.org/10.1007/BF00886012
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  • 39
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    Dynamics of film growth of GaAs by MBE from Rheed observations (1983)
    Springer
    Applied physics 31 (1983), S. 1-8 
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    ISSN: 1432-0630
    Keywords: 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Detailed observations have been made of the intensity oscillations in the specularly reflected and various diffracted beams in the RHEED pattern during MBE growth of GaAs, Ga x Al1−x As and Ge. The results indicate that growth occurs predominantly in a two-dimensional layer-by-layer mode, but there is some roughening, which is enhanced by deviations from stoichiometry and the presence of impurities. In the case of the GaAs (001) −2×4 reconstructed surface a combination of dynamic and static RHEED measurements has provided firm evidence for the presence of one-dimensional disorder features as well as surface steps.
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  • 40
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    The velocity distribution of sputtered Zr atoms for irradiation at normal and oblique angle of incidence (1984)
    Springer
    Applied physics 33 (1984), S. 235-241 
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    ISSN: 1432-0630
    Keywords: 79.20 ; 32.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Laser-induced fluorescence by means of a cw dye laser has been used for investigating the velocity distribution of sputtered Zr atoms in the ground state. In order to evaluate the data the excitation probability of the atoms in the observation volume has been measured. The velocity distribution of Zr atoms for irradiation with Ar+-ions as well as light ions at normal and oblique angle (70°) of incidence is presented.
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    Cadmium deposition on transparent substrates by laser induced dissociation of Cd(CH3)2 at visible wavelengths (1982)
    Springer
    Applied physics 27 (1982), S. 133-138 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 81.15-g ; 82.50
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The laser initiated formation of Cd-deposits from dimethylcadmium (DMCd) on quartz substrates has been investigated at various wavelengths between 337 and 676 nm. In this range substrate and DMCd are both transparent. The deposition mechanism is initiated by multiphoton dissociation of DMCd molecules adsorbed at the glass substrate and continues by pyrolysis of DMCd molecules at the laser-heated metallic deposit. Metal structures with a resolution below 1 μm have been obtained.
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  • 42
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    Formation of palladium silicide by rapid thermal annealing (1984)
    Springer
    Applied physics 35 (1984), S. 141-144 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 81.10
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The formation of palladium silicide Pd2Si by rapid thermal annealing of Pd layers on silicon has been studied as a function of annealing time (1–60s) in the temperature range 350–500 °C. It is shown that the results found for conventional furnace annealing (long duration, low temperature) can be extrapolated for rapid thermal annealing (shorter time, higher temperature) when taking into account the exact time dependence of the short temperature cycle. The growth rate is essentially diffusion limited and the activation energy is close to 1.1±0.1 eV. Silicide resistivity of about 30–40 Ω cm was obtained for 200–400 nm thick Pd2Si layers formed at 400 °C for a few seconds.
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    A semiempirical formula describing the recoil yield in silicon (1984)
    Springer
    Applied physics 35 (1984), S. 161-167 
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    ISSN: 1432-0630
    Keywords: 34 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Krypton ions in the energy range 20–300 keV are used to generate recoiling atoms in silicon from thin layers evaporated on its surface. The recoil yields and the impurity distributions in the substrate have been measured as a function of several parameters (energy, thickness of the layer, incident dose). The results are used to propose a new formulation of the recoil yield based on the possibility, for both projectiles and recoiling atoms, to remove impurities previously introduced in silicon. The calculation fits very well the experimental results using displacement energies close to the generally admitted values
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    Vanadium oxidation as a result of cw CO2 laser irradiation in atmospheric air (1984)
    Springer
    Applied physics 35 (1984), S. 103-108 
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    ISSN: 1432-0630
    Keywords: 42.60 ; 68.55 ; 61.80
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract New results are reported concerning the vanadium oxidation by cw CO2 laser irradiation in air at atmospheric pressure. Particular emphasis is paid both to the initial stage and the development of the oxidation process under the action of the laser radiation. Some aspects are finally discussed concerning the quantitative theoretical interpretation of the experimentally recorded data.
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    Changes produced in the electrical resistivity of ErH2 thin films when converted to ErH3 due to hydrogen treatment (1984)
    Springer
    Applied physics 35 (1984), S. 263-265 
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    ISSN: 1432-0630
    Keywords: 73.60 ; 68.55 ; 81.10
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    Notes: Abstract The resistivity of thin films (80–200 Å) of ErH2 increases sharply when heated for 2 h at 300 °C in vacuum in the presence of hydrogen gas at ∼ 10−2 Torr. This confirms that the films, originally metallic conductor, have become converted to semiconducting ErH3 which is in conformity with the structural studies. The negative values of TCR also indicate the semiconducting nature of the hydrogen treated films. Activation energies of the films have been evaluated.
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  • 46
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    A TEM study of crystal and domain structures of Nb-Doped 95/5 PZT ceramics (1982)
    Springer
    Applied physics 29 (1982), S. 237-244 
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    ISSN: 1432-0630
    Keywords: 61.10 ; 64 ; 68.55 ; 77.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract 95/5 PZT ceramics with compositions of Pb(Zr1−x Ti x )3+1 wt% Nb2O5 (x=0.025 and 0.04) are studied with TEM. The coexistence of both ferroelectric (F) and antiferroelectric (AF) phases in one ceramic grain at room temperature is confirmed for these two compositions. The AF phase is mainly tetragonal, while a pseudo-cubic arrangement of AF polarization is also possibly present. When the Ti4+ concentration is increased, the F phase becomes predominant. Direct interfaces between F and AF domains can be observed, the former expands at the expense of the latter when bombarded by 200 keV electrons.
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    URL: http://dx.doi.org/10.1007/BF00615074
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    A simple technique to deposit molybdenum thin films (1982)
    Springer
    Applied physics 28 (1982), S. 125-128 
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    ISSN: 1432-0630
    Keywords: 52 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A simple technique is proposed for metallizing nonconductive objects. The technique, which is based on a plasma-induced dissociation of Mo(CO)6 molecules, is inexpensive with no sophisticated instrument needed, and allows us to deposit fine grained, adherent thin films of molybdenum on nonrefractory substrates. It is believed that the technique possesses a variety of potential applications in laboratory works.
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    URL: http://dx.doi.org/10.1007/BF00617143
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