Abstract
Depth profiles of 190 keV Cr implanted-GaAs have been measured by SIMS analysis. The as-implanted Cr profiles are approximately Gaussian with good agreement between theory and experiment on the projected range. A fast migration of Cr is observed after heat treatment under encapsulation, and even as soon as the silicon nitride film is deposited. There is no evidence for Cr precipitation, even in the case of the largest implanted dose (1015 cm−2).
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