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  • 2000-2004  (295.801)
  • 1960-1964  (18)
  • 1945-1949  (17.407)
  • 2001  (295.801)
  • 1945  (17.406)
Sammlung
Schlagwörter
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  • 1
    Unbekannt
    Proceedings of the Tenth World Conference on Earthquake Engineering : 19-24 July 1992, Madrid, Spain (1992-)
    Rotterdam [u.a.] : Balkema
    Details Verfügbarkeit
    Signatur: M 92.0634
    ISBN: 9054100605
    Sprache: Englisch
    Zweigbibliothek: GFZ Bibliothek
    Standort Signatur Erwartet Verfügbarkeit
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  • 2
    Monographie ausleihbar
    Monographie ausleihbar
    Quake : part two, the aftermath (1900-)
    [Edgecumbe, N.Z.] : A. Muller
    Details Verfügbarkeit
    Signatur: M 15.89146
    Beschreibung / Inhaltsverzeichnis: An account of the results of the 2 March 1987 earthquake in the eastern Bay of Plenty and the aftermath's effects on the people and places on the Rangitaiki Plains
    Materialart: Monographie ausleihbar
    Seiten: 223 S., , Ill.
    Sprache: Englisch
    Zweigbibliothek: GFZ Bibliothek
    Standort Signatur Erwartet Verfügbarkeit
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  • 3
    Monographie ausleihbar
    Monographie ausleihbar
    Hans Stille (1876-1966) geologist (1978-)
    Stuttgart : Schweizerbart Science Publishers ; Volume 1, number 1 (1978)-
    Details Verfügbarkeit
    Signatur: M 18.91571
    Materialart: Monographie ausleihbar
    Seiten: 134 Seiten
    ISSN: 2363-7196
    Serie: Global tectonics and metallogeny : special issue Vol. 10/2-4
    Klassifikation:
    Tektonik
    Paralleltitel: Erscheint auch als Global tectonics and metallogeny
    Sprache: Englisch
    Standort: Kompaktmagazin oben
    Zweigbibliothek: GFZ Bibliothek
    Standort Signatur Erwartet Verfügbarkeit
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  • 4
    Schriftenreihen ausleihbar
    Schriftenreihen ausleihbar
    Das Klima von Potsdam : Ergebnisse 60jähriger Beobachtungen am Meteorologischen Observatorium 1893-1952; [Textband] (1963-)
    Berlin : Reimer
    Dazugehörige Bände
    Details Verfügbarkeit
    Signatur: AWI A3-20-93434
    In: Meteorologische Abhandlungen / Institut für Meteorologie und Geophysik der Freien Universität Berlin, Band XXXII, Heft 1
    Materialart: Schriftenreihen ausleihbar
    Seiten: 121 Seiten , Illustrationen
    Serie: Meteorologische Abhandlungen / Institut für Meteorologie und Geophysik der Freien Universität Berlin 32,1
    Sprache: Deutsch
    Anmerkung: Zugleich: Dissertation, Freie Unversität Berlin, [ca. 1963] , INHALTSVERZEICHNIS PROBLEMSTELLUNG UND ZIELSETZUNG 1. BEMERKUNGEN ZUM BEOBACHTUNGSGELÄNDE UND ZUM BEOBACHTUNGSMATERIAL 1.1 Das Beobachtungsgelände 1.2 Das Beobachtungsmaterial 2. HOMOGENITÄTSBETRACHTUNGEN 2.1 Temperatur 2.2 Niederschlag 2.3 Wind 2.4 Sonnenschein und Bewölkung 3. TEMPERATURVERHÄLTNISSE 3.1 Monats- und Jahreswerte 3.2 Tageswerte 3.3 Pentadenwerte 3.4 Häufigkeitsbetrachtungen 3.5 Interdiurne Veränderlichkeit 3.6 Der tägliche Gang 3.7 Vorkommen bestimmter Schwellenwerte 3.71 Frost- und Eistage 3.72 Sommer- und Tropentage 4. DER WASSERGEHALT DER LUFT 4.1 Monats- und Jahreswerte 4.2 Tageswerte 4.3 Häufigkeitsbetrachtungen 4.4 Interdiurne Veränderlichkeit 4.5 Der tägliche Gang 5. BEWÖLKUNGSVERHÄLTNISSE 5.1 Monats- und Jahreswerte 5.2 Tageswerte 5.3 Häufigkeitsbetrachtungen 5.4 Der tägliche Gang 5.5 Heitere und trübe Tage 5.6 Nebel 6. SONNENSCHEIN 6.1 Monats- und Jahreswerte 6.2 Tageswerte 6.3 Der tägliche Gang 7. NIEDERSCHLAGSVERHÄLTNISSE 7.1 Monats- und Jahreswerte 7.2 Niederschlagsbereitschaft 7.3 Tageswerte 7.4 Der tägliche Gang 7.5 Häufigkeitsbetrachtungen 7.6 Niederschlags- und Trockenperioden 7.7 Niederschlag und Wind· 7.8 Schneeverhältnisse 7.81 Schneefall und Schneedecke 7.82 Schneehöhe 7.9 Gewitter 8. WINDVERHÄLTNISSE 8.1 Windrichtung 8.2 Windgeschwindigkeit 8.21 Der jährliche Gang 8.22 Häufigkeitsbetrachtungen 8.23 Sturmtage und Windstillen 8.24 Der tägliche Gang 9.ZUSAMMENFASSUNG VERZEICHNIS DER TEXTTABELLEN VERZEICHNIS DER ABBILDUNGEN LITERATURVERZEICHNIS TABELLENANHANG
    Standort: AWI Lesesaal
    Zweigbibliothek: AWI Bibliothek
    Standort Signatur Erwartet Verfügbarkeit
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  • 5
    Schriftenreihen ausleihbar
    Schriftenreihen ausleihbar
    Das Klima von Potsdam : Ergebnisse 60jähriger Beobachtungen am Meteorologischen Observatorium 1893-1952; Tabellenanhang (1963-)
    Berlin : Reimer
    Dazugehörige Bände
    Details Verfügbarkeit
    Signatur: AWI A3-20-93434-2
    In: Meteorologische Abhandlungen / Institut für Meteorologie und Geophysik der Freien Universität Berlin, Band XXXII, Heft 2
    Materialart: Schriftenreihen ausleihbar
    Seiten: 218 Seiten , Illustrationen
    Serie: Meteorologische Abhandlungen / Institut für Meteorologie und Geophysik der Freien Universität Berlin 32,2
    Sprache: Deutsch
    Anmerkung: Zugleich: Dissertation, Freie Unversität Berlin, [ca. 1963] , INHALTSVERZEICHNIS PROBLEMSTELLUNG UND ZIELSETZUNG 1. BEMERKUNGEN ZUM BEOBACHTUNGSGELÄNDE UND ZUM BEOBACHTUNGSMATERIAL 1.1 Das Beobachtungsgelände 1.2 Das Beobachtungsmaterial 2. HOMOGENITÄTSBETRACHTUNGEN 2.1 Temperatur 2.2 Niederschlag 2.3 Wind 2.4 Sonnenschein und Bewölkung 3. TEMPERATURVERHÄLTNISSE 3.1 Monats- und Jahreswerte 3.2 Tageswerte 3.3 Pentadenwerte 3.4 Häufigkeitsbetrachtungen 3.5 Interdiurne Veränderlichkeit 3.6 Der tägliche Gang 3.7 Vorkommen bestimmter Schwellenwerte 3.71 Frost- und Eistage 3.72 Sommer- und Tropentage 4. DER WASSERGEHALT DER LUFT 4.1 Monats- und Jahreswerte 4.2 Tageswerte 4.3 Häufigkeitsbetrachtungen 4.4 Interdiurne Veränderlichkeit 4.5 Der tägliche Gang 5. BEWÖLKUNGSVERHÄLTNISSE 5.1 Monats- und Jahreswerte 5.2 Tageswerte 5.3 Häufigkeitsbetrachtungen 5.4 Der tägliche Gang 5.5 Heitere und trübe Tage 5.6 Nebel 6. SONNENSCHEIN 6.1 Monats- und Jahreswerte 6.2 Tageswerte 6.3 Der tägliche Gang 7. NIEDERSCHLAGSVERHÄLTNISSE 7.1 Monats- und Jahreswerte 7.2 Niederschlagsbereitschaft 7.3 Tageswerte 7.4 Der tägliche Gang 7.5 Häufigkeitsbetrachtungen 7.6 Niederschlags- und Trockenperioden 7.7 Niederschlag und Wind· 7.8 Schneeverhältnisse 7.81 Schneefall und Schneedecke 7.82 Schneehöhe 7.9 Gewitter 8. WINDVERHÄLTNISSE 8.1 Windrichtung 8.2 Windgeschwindigkeit 8.21 Der jährliche Gang 8.22 Häufigkeitsbetrachtungen 8.23 Sturmtage und Windstillen 8.24 Der tägliche Gang 9.ZUSAMMENFASSUNG VERZEICHNIS DER TEXTTABELLEN VERZEICHNIS DER ABBILDUNGEN LITERATURVERZEICHNIS TABELLENANHANG
    Standort: AWI Lesesaal
    Zweigbibliothek: AWI Bibliothek
    Standort Signatur Erwartet Verfügbarkeit
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  • 6
    Zeitschrift ausleihbar
    Zeitschrift ausleihbar
    FinanzArchiv : public finance analysis (1884-)
    Tübingen : Mohr Siebeck ; 1.1884 - 48.1931; N.F. 1.1932/33 - 10.1943/44(1945),3; 11.1948/49(1949) -
    Details
    Signatur: ZS 22.95039
    Materialart: Zeitschrift ausleihbar
    Seiten: Online-Ressource
    ISSN: 1614-0974 , 0015-2218 , 0015-2218
    URL: https://www.jstor.org/journal/finaarch
    URL: http://www.bibliothek.uni-regensburg.de/ezeit/?2143985
    URL: https://www.mohrsiebeck.com/zeitschrift/finanzarchiv-fa
    URL: https://www.jstor.org/journal/finaarch
    Sprache: Deutsch , Englisch
    Anmerkung: N.F. entfällt ab 57.2000. - Volltext auch als Teil einer Datenbank verfügbar , Ersch. ab 2000 in engl. Sprache mit dt. Hauptsacht.
    Standort Signatur Erwartet Verfügbarkeit
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    E-BOOK
  • 7
    Monographie ausleihbar
    Monographie ausleihbar
    Zuwendungsrecht Zuwendungspraxis : Textsammlung, Kommentar und Rechtsprechungssammlung zum Recht der Zuwendungen und Subventionen der öffentlichen Hand mit Verfahrenshinweisen für die Behörden und Zuwendungsempfänger (1982-)
    Heidelberg : v. Decker
    Details Verfügbarkeit
    Signatur: IASS 15.89494
    Materialart: Monographie ausleihbar
    Seiten: Losebl.-Ausg.
    Ausgabe: Stand: Oktober 2010
    ISBN: 9783768501828
    URL: Inhaltsverzeichnis
    Sprache: Deutsch
    Zweigbibliothek: RIFS Bibliothek
    Standort Signatur Erwartet Verfügbarkeit
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  • 8
    Monographie ausleihbar
    Monographie ausleihbar
    Climatología aeronáutica de España (1948-)
    Madrid : Secc
    Details Verfügbarkeit
    Signatur: PIK N 456-17-90913
    Materialart: Monographie ausleihbar
    Seiten: 536 Seiten
    Serie: Ministerio de Transportes Turismo Y Comunicaciones : Publicación Serie A 114
    Paralleltitel: 1,1=6; 2,1=13 von Publicaciones / D / Ministerio del Aire, Subsecretaria de Aviación Civil, Servicio Meteorológico Nacional
    Sprache: Spanisch
    Standort: A 18 - Bitte bestellen
    Zweigbibliothek: PIK Bibliothek
    Standort Signatur Erwartet Verfügbarkeit
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  • 9
    Monographie ausleihbar
    Monographie ausleihbar
    Agraratlas über das Gebiet der Deutschen Demokratischen Republik : Bodenarten und Bodenartliche Ertragsbedingungen (1956-)
    Gotha : Haack
    Details Verfügbarkeit
    Signatur: (DE-599)GBV03709842X
    Materialart: Monographie ausleihbar
    Sprache: Deutsch
    Standort: MOP - Bitte bestellen
    Zweigbibliothek: GFZ Bibliothek
    Standort Signatur Erwartet Verfügbarkeit
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  • 10
    Monographie ausleihbar
    Monographie ausleihbar
    Osnovy učenija o počvennoj vlage : I.: Vodny svojstva počv i peredvizenie počvennoj vlagi (1965-)
    Leningrad : Gidrometeorolog. Izd.
    Details Verfügbarkeit
    Signatur: MOP 33767
    Materialart: Monographie ausleihbar
    Seiten: 663 S.
    Sprache: Russisch
    Anmerkung: In kyrill. Schr., russ.
    Standort: MOP - Bitte bestellen
    Zweigbibliothek: GFZ Bibliothek
    Standort Signatur Erwartet Verfügbarkeit
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  • 11
    Monographie ausleihbar
    Monographie ausleihbar
    Atmospheric dust and aerosol study : second status report (1977-)
    Garmisch-Partenkirchen : Institut für atmosphärische Umweltforschung der Fraunhofer- Gesellschaft
    Details Verfügbarkeit
    Signatur: MOP 44829 / Mitte
    Materialart: Monographie ausleihbar
    Seiten: 25 S. , graph. Darst.
    Sprache: Englisch
    Standort: MOP - Bitte bestellen
    Zweigbibliothek: GFZ Bibliothek
    Standort Signatur Erwartet Verfügbarkeit
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  • 12
    Monographie ausleihbar
    Monographie ausleihbar
    Referativnyj žurnal : geologija, geografija (1982-)
    Moskva
    Details Verfügbarkeit
    Signatur: MOP 19538/1d-6d
    Materialart: Monographie ausleihbar
    Seiten: 111 S.
    ISSN: 0486-2287
    Sprache: Russisch
    Anmerkung: In kyrill. Schr.
    Standort: MOP - Bitte bestellen
    Zweigbibliothek: GFZ Bibliothek
    Standort Signatur Erwartet Verfügbarkeit
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  • 13
    Digitale Medien
    Digitale Medien
    A measurement of τ polarization in Z^0 decays (1992-8977)
    Amsterdam : Elsevier
    Physics Letters B 294 (1992), S. 466-478 
    Details
    ISSN: 0370-2693
    Quelle: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Thema: Physik
    Materialart: Digitale Medien
    URL: http://linkinghub.elsevier.com/retrieve/pii/0370-2693(92)91549-O
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    Artikel (Nationallizenzen)
    Volltext
  • 14
    Digitale Medien
    Digitale Medien
    Measurement of the average lifetime of b hadrons (1993-4325)
    Amsterdam : Elsevier
    Physics Letters B 317 (1993), S. 474-484 
    Details
    ISSN: 0370-2693
    Quelle: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Thema: Physik
    Materialart: Digitale Medien
    URL: http://linkinghub.elsevier.com/retrieve/pii/0370-2693(93)91027-K
    Standort Signatur Erwartet Verfügbarkeit
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  • 15
    facet.materialart.
    Unbekannt
    Abhandlungen der Geologischen Bundesanstalt in Wien (1925-2022)
    Wien : [Verlag nicht ermittelbar] ; 22.1910/25(1925),3; 23.1914/31(1929/31),2-3; 24.1927,1-2; 25.1939,1; 26.1948,1; 27.1971-Band 76 (2022)
    Details Verfügbarkeit
    Signatur: S 91.1179
    ISSN: 0375-5797 , 0378-0864
    Paralleltitel: 35=2 von European Conodont Symposium (ZDB) Guidebook, abstracts / European Conodont Symposium
    Paralleltitel: 41=2 von Workshop on Agglutinated Foraminifera (ZDB) Proceedings / Workshop on Agglutinated Foraminifera. Geologische Bundesanstalt
    Paralleltitel: 39=3 von International Nannoplankton Association Proceedings of the ... International Nannoplankton Association conference
    Paralleltitel: 60=11 von Deutsche Gesellschaft für Geowissenschaften. Fachsektion GeoTop Internationale Jahrestagung der Fachsektion GeoTop der Deutschen Gesellschaft für Geowissenschaften
    Vorheriger Titel: Vorg. Geologische Reichsanstalt Abhandlungen der Kaiserlich-Königlichen Geologischen Reichsanstalt, Wien
    Nachfolgender Titel: Fortgesetzt durch Abhandlungen
    Sprache: Deutsch
    Zweigbibliothek: GFZ Bibliothek
    Standort Signatur Erwartet Verfügbarkeit
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  • 16
    Karte ausleihbar
    Karte ausleihbar
    Rust; 78. 1:50 000 (1993-2010)
    Dazugehörige Bände
    Details Verfügbarkeit
    Signatur: K 95.0020 / R6
    In: Geologische Karte der Republik Österreich
    Materialart: Karte ausleihbar
    Seiten: 1 Kt. : mehrfarb. ; 54 x 82 cm, gefaltet 12 x 21 cm + Erl.-H. (192 S., 2010) im Umschlag
    ISBN: 9783853160558
    Standort: Kompaktmagazin oben
    Zweigbibliothek: GFZ Bibliothek
    Standort Signatur Erwartet Verfügbarkeit
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    Karte
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  • 17
    facet.materialart.
    Unbekannt
    UFZ-Bericht (1994-2006)
    Leipzig ; Nachgewiesen 1994 - 2006
    Details Verfügbarkeit
    Signatur: SR 90.1139
    ISSN: 0948-9452
    Paralleltitel: 1996,5=1; 1996,6=2; 1996,8=3; 1996,9=4; 1996,10=5; 1996,11=6; 1996,12=7; 1996,16=8; 1996,18=9; 1996,20=10; 1997,2=11; 1997,7=12; 1997,16=13; 1997,25=14; 1998,9=15; 1998,14=16; 1998,19=17; 1999,4=19; 1999,18=23; 2000,8=26; 2000,10=27; 2001,18=31; 2002,5=32; 2002,21=33; 2003,2=35; 2003,17=36 von ---〉 Stadtökologische Forschungen
    Paralleltitel: 2005,1=1 von ---〉 Basic and applied dryland research
    Nachfolgender Titel: Forts. ---〉 Helmholtz-Zentrum für Umweltforschung 〈Leipzig〉: UFZ-Bericht
    Zweigbibliothek: GFZ Bibliothek
    Standort Signatur Erwartet Verfügbarkeit
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  • 18
    Non-Book-Medium
    Non-Book-Medium
    South Africa = Suid-Afrika [Elektronische Ressource] 1:250 000 (1996-2004)
    Dazugehörige Bände
    Details Verfügbarkeit
    Signatur: NBM 09.0423
    In: South Africa = Suid-Afrika
    Materialart: Non-Book-Medium
    Seiten: 1 DVD (71 Blätter, Indexblätter : TIF-Bilder)
    Serie: South Africa = Suid-Afrika
    Standort: Lesesaal
    Zweigbibliothek: GFZ Bibliothek
    Standort Signatur Erwartet Verfügbarkeit
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  • 19
    Schriftenreihen ausleihbar
    Schriftenreihen ausleihbar
    Geologičeskoe izučenie i ispolzovanie nedr : naučno-techničeskij informacionnyj sbornik ; Vypusk 2 (1996-2003)
    Moskva : ZAO "Geoinformmark"
    Details Verfügbarkeit
    Signatur: AWI G1-19-92229
    Materialart: Schriftenreihen ausleihbar
    Seiten: 61 Seiten , Illustrationen
    ISSN: 0868-4502
    Sprache: Russisch
    Anmerkung: In kyrillischer Schrift
    Standort: AWI Lesesaal
    Zweigbibliothek: AWI Bibliothek
    Standort Signatur Erwartet Verfügbarkeit
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  • 20
    Schriftenreihen ausleihbar
    Schriftenreihen ausleihbar
    Small publications in historical geophysics : No. 1 - 12 (1995-2003)
    [Sund], Aland Islands : Summer Inst. for Historical Geophysics
    Dazugehörige Bände
    Details Verfügbarkeit
    Signatur: S 97.0296(1-12)
    In: Small publications in historical geophysics
    Materialart: Schriftenreihen ausleihbar
    Standort: Kompaktmagazin unten
    Zweigbibliothek: GFZ Bibliothek
    Standort Signatur Erwartet Verfügbarkeit
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  • 21
    Monographie ausleihbar
    Monographie ausleihbar
    Building a geodatebase (1999-2002)
    Redlands, California : ESRI
    Dazugehörige Bände
    Details Verfügbarkeit
    Signatur: M 04.0051/2
    In: ArcGis concept guides - bundle
    Materialart: Monographie ausleihbar
    Seiten: vii, 460 S.
    ISBN: 1589480651
    Serie: ArcGIS 8 concept guides - bundle
    Klassifikation:
    Kartographie, Geoinformationssysteme, Datenbanken
    Standort: Kompaktmagazin oben
    Zweigbibliothek: GFZ Bibliothek
    Standort Signatur Erwartet Verfügbarkeit
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  • 22
    Monographie ausleihbar
    Monographie ausleihbar
    Understanding map projections (1994-2002)
    Redlands, California : ESRI
    Dazugehörige Bände
    Details Verfügbarkeit
    Signatur: 1.10/M 04.0051/1
    In: ArcGis concept guides - bundle
    Materialart: Monographie ausleihbar
    Seiten: v, 110 S.
    ISBN: 1589480031
    Serie: ArcGIS 8 concept guides - bundle
    Klassifikation:
    Kartographie, Geoinformationssysteme, Datenbanken
    Standort: Kompaktmagazin oben
    Zweigbibliothek: GFZ Bibliothek
    Standort Signatur Erwartet Verfügbarkeit
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  • 23
    facet.materialart.
    Unbekannt
    Lexikon der Geowissenschaften : in sechs Bänden (2000-2002)
    Heidelberg [u.a.] : Spektrum, Akad. Verl.
    Details Verfügbarkeit
    Signatur: N 03.0463/1-6
    Seiten: Bd.1-6
    Klassifikation:
    A..
    Zweigbibliothek: GFZ Bibliothek
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  • 24
    Non-Book-Medium
    Non-Book-Medium
    South Africa = Suid-Afrika [Elektronische Ressource] 1:50 000 (1980-2002)
    Pretoria : Director of Surveys and Mapping
    Dazugehörige Bände
    Details Verfügbarkeit
    Signatur: NBM 09.0425/6 (3317-3424) ; NBM 09.0425/5 (3030-3229) ; NBM 09.0425/4 (2831-3029) ; NBM 09.0425/3 (2727-2830) ; NBM 09.0425/2 (2531-2726) ; NBM 09.0425/1 (Index, 2221-2530)
    In: South Africa = Suid-Afrika
    Materialart: Non-Book-Medium
    Seiten: 6 DVD (1875 Blätter, Indexblatt: TIF-Bilder)
    Ausgabe: Versch. Ausg.
    Serie: South Africa = Suid-Afrika
    Standort: Lesesaal
    Standort: Lesesaal
    Standort: Lesesaal
    Standort: Lesesaal
    Standort: Lesesaal
    Standort: Lesesaal
    Zweigbibliothek: GFZ Bibliothek
    Zweigbibliothek: GFZ Bibliothek
    Zweigbibliothek: GFZ Bibliothek
    Zweigbibliothek: GFZ Bibliothek
    Zweigbibliothek: GFZ Bibliothek
    Zweigbibliothek: GFZ Bibliothek
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  • 25
    facet.materialart.
    Unbekannt
    Stockholm contributions in geology (1957-2002)
    Stockholm : Almquist & Wiksell ; 1.1957/58 - 47.2002; damit Ersch. eingest.
    Details Verfügbarkeit
    Signatur: SR 90.1145
    ISSN: 0585-3532
    Serie: Acta Universitatis Stockholmiensis
    Zweigbibliothek: GFZ Bibliothek
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    ANARE research notes (1982-2002)
    Kingston ; 1.1982 - 105.2002; damit Ersch. eingest.
    Details Verfügbarkeit
    Signatur: ZSP-124
    ISSN: 0729-6533
    Paralleltitel: 48=1987; 69=1988; 88=1992 von Australian upper atmospheric and space physics research in Antarctica
    Paralleltitel: 80=1991 von Australian upper atmospheric and magnetospheric physics research in Antarctica
    Paralleltitel: 92=1993 von Australian auroral and space physics research in Antarctica
    Paralleltitel: 95=1994/95 von Australian atmospheric and space physics research in Antarctica
    Zweigbibliothek: GFZ Bibliothek
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    Growth of β-FeSi2 films via noble-gas ion-beam mixing of Fe/Si bilayers (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4474-4484 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A detailed study of the formation of β-FeSi2 films by ion-beam mixing of Fe/Si bilayers with noble gas ions is presented. Fe films of 35–50 nm deposited on Si (100) were irradiated with 80–700 keV Ar, Kr, or Xe ions in a wide temperature interval, from room temperature to 600 °C. The structures were analyzed by Rutherford backscattering spectroscopy, x-ray diffraction, conversion electron Mössbauer spectroscopy, elastic recoil detection analysis, cross-section high resolution transmission electron microscopy, and energy dispersive x-ray spectroscopy. Already after Xe irradiation at 300 °C the whole Fe layer is transformed to a mixture of Fe3Si, cursive-epsilon-FeSi, and β-FeSi2 phases. At 400–450 °C, a unique, layer by layer growth of β-FeSi2 starting from the surface was found. A full transformation of 35 nm Fe on Si to a 105 nm β-FeSi2 layer was achieved by irradiation with 205 keV Xe to 2×1016 ions/cm2, at a temperature of 600 °C. The fully ion-beam grown layers exhibit a pronounced surface roughness, but a sharp interface to Si. This structure is assigned to a growth of β-FeSi2 grains in a local surrounding of interdiffused silicon. Rapid diffusion of silicon to the surface was observed during all ion irradiations. Single-phase β-FeSi2 layers were also synthesized by vacuum annealing for 2 h at 600 °C of 35 nm Fe/Si bilayers premixed with Xe at 450 °C. In this case, the layers form with a smoother surface topography. It is concluded that ion-beam mixing can be used successfully for growth of β-FeSi2 layers at moderate temperatures, either directly or combined with postirradiation annealing. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1405818
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  • 28
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    Enhanced ultraviolet emission and optical properties in polyvinyl pyrrolidone surface modified ZnO quantum dots (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4489-4493 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Optical properties of ZnO quantum dots (QDs) capped with polyvinyl pyrrolidone (PVP) molecules have been investigated. It is demonstrated that surface modification by PVP can dramatically change the emission spectra of the ZnO QDs. At the optimized condition with a PVP/Zn2+ ratio of 3:5, the photoluminescence (PL) spectrum of ZnO QDs shows a strong ultraviolet (UV) emission while the low energy green emission is fully quenched. This is a result of the surface passivation of the ZnO QDs by the PVP molecules. The origin of the green emission is attributed to the surface states associated with oxygen vacancies. Temperature and excitation power dependent PL studies suggest that the UV emission is associated with localized states. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1406973
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  • 29
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    Origin of the unusual dependence of Raman D band on excitation wavelength in graphite-like materials (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4494-4497 
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    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have revisited the still unresolved puzzle of the dispersion of the Raman disorder-induced D band as a function of laser excitation photon energy EL in graphite-like materials. We propose that the D mode is a combination of an optic phonon at the K point in the Brillioun zone and an acoustic phonon whose momentum is determined uniquely by the double resonance condition. The fit of the experimental data with the double-resonance model yields the reduced effective mass of 0.025 me for the electron-hole pairs corresponding to the A2 transition, in agreement with other experiments. The model can also explain the difference between ωS and ωAS for D and D* modes, and predicts its dependence on the Raman excitation frequency. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1408590
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  • 30
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    Electrical effects of plasma enhanced chemical vapor deposition of SiNx on GaAs Schottky rectifiers (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4800-4804 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The diode ideality factor, reverse breakdown voltage, and forward current characteristic were used to measure the effect on electric performance of GaAs rectifiers deposited with thin films of SiNx. Over a broad range of deposition conditions there were minimal changes (〈10%) in breakdown voltage and the cause was hydrogen passivation of Si dopants in the GaAs. Ion-induced damage did not appear to play a significant role in the results. The ideality factors and forward leakage currents were essentially unchanged by the SiNx deposition indicating that the plasma exposure did not create defects states around the periphery of the Schottky contact. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1410323
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  • 31
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    Evidence for voltage drops at misaligned wafer-bonded interfaces of AlGaInP light-emitting diodes by electrostatic force microscopy (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4791-4795 
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    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Electrostatic force microscopy (EFM) with phase detection has been applied to cleaved cross sections of wafer-bonded transparent substrate (TS) AlGaInP light-emitting diode (LED) structures. EFM was performed with the LED under active bias to image the voltage drops across the device layers. Measurements on a nonwafer-bonded, absorbing substrate (AS) AlGaInP LED wafer, showed a voltage drop only at the p–n junction. A TS wafer with high forward voltage (Vf ) showed a much larger voltage drop at the wafer-bonded interface, compared with a normal TS LED wafer. Secondary ion mass spectrometry profiles of these wafers revealed ∼1×1013 cm−2 of carbon at the bonded interface in the high Vf sample, compared to ∼3×1012 cm−2 in the normal wafer. The unwanted voltage drop at the bonded interface was likely caused by a combination of carbon acting as a p-type dopant and the presence of interface states due to a ∼3° in-plane rotational misalignment at wafer bonding. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1406549
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  • 32
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    Role of thermal energy on the magnetic properties of laminated antiferromagnetically coupled recording media (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3442-3449 
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    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The effect of thermal energy (kBT), which has been found to play some important roles in the magnetic properties of recently developed antiferromagnetically coupled media, is described. It was observed that the thermal energy helps to obtain an antiparallel configuration of moments at remanence. Therefore, a reduction in the remnant moment–thickness product (Mrδ) is observed, even for smaller values of J (interface coupling constant) than those used in simulations that do not consider thermal energy. The magnetic viscosity measurement helps to distinguish the magnetization decay behavior of the top and bottom layers. The magnetic moments of top and bottom layers show maximum decay at different fields and the decay rates approximately scale with their thickness. Viscosity results also point out that the magnetization reversal of the bottom layer should occur in the first quadrant, in order to obtain a low noise and thermally stable media. Micromagnetic simulation was performed by including thermal effects. In that case, Mrδ reduction could be obtained for smaller values of J than in the case where thermal energy is not included in the simulation. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1399030
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  • 33
    Digitale Medien
    Digitale Medien
    Thomson scattering in a low-pressure neon mercury positive column (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3720-3725 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The electron density and the electron temperature in a low-pressure neon mercury positive column are determined using Thomson scattering. Special attention has been given to the stray light reduction in the Thomson scattering setup. The results are obtained in a discharge tube with a 26 mm diam, 10 mbar of neon, a mercury pressure inbetween 0.14 and 0.85 Pa, and an electric current ranging from 100 to 400 mA. The systematic error in the electron density is 15%–45%, the statistical error is 25%–35%. The total error in the electron temperature is 15%–35%. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1390497
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  • 34
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    Digitale Medien
    Bulk diffusion measurements to study the effectiveness of barrier layers: I. Mathematical treatment (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3799-3809 
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    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The exchange of a tracer material, e.g., a radioactive isotope, between two samples forming a diffusion couple depends on the rate of the diffusion of the tracer in each of the two samples and also on the rate of the transfer of the tracer across the interface between these samples which may or may not contain a barrier layer with a different chemical composition and/or structure. Diffusion couples with three different initial tracer distributions are considered. In order to extract from experimental data values for tracer diffusion coefficients and for the rate constant for the tracer transport across the interface, a detailed analysis of the required mathematics is given. This analysis is of interest as well for obtaining true values for bulk diffusivities and also to characterize quantitatively the resistance of interfaces (=barriers) to the exchange of certain species. Some examples of experimental results are presented and briefly discussed. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1402150
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  • 35
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    Study of copper silicide retardation effects on copper diffusion in silicon (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3822-3824 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A B-buried layer with a dose of 1×1014 atoms/cm2 was introduced into p-doped Si at a depth of 2.2 μm to enhance copper diffusion via its inherent gettering effect. Copper was then introduced into silicon either via a low-energy implantation followed by a thermal anneal, or through the thermal drive in of physical vapor deposited (PVD) copper film. Secondary ion mass spectrometry depth profiling of both annealed samples later indicated that while substantial amounts of copper was gettered by the B layer in the former sample, no copper was gettered by the B-buried layer in the latter sample. Further analysis with an x-ray diffraction technique showed that copper silicide, Cu3Si was formed in the latter sample. It is thus surmised that the formation of this silicide layer impeded the diffusion of copper towards the B-buried layer. This work investigates the cause of CuSix formation and the underlying reasons for the lower mobility of Cu in PVD Cu film samples. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1343518
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  • 36
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    Bulk diffusion measurements to study the effectiveness of barrier layers: II. Exchange of sodium between liquid crystal display glass substrates with different barrier layers (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3810-3815 
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    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Na-22 tracer diffusion experiments were performed to study the exchange of Na ions between liquid crystal display glass substrates (Corning Code 1737) separated by different types of layers. Different types of layers were generated (i) by RCA cleaning, (ii) by preannealing in wet air, and (iii) by low pressure chemical vapor deposition. A sandwich configuration was used to study the effect of such layers between two glass substrates on the exchange of Na ions between these substrates. The sandwiches were of the type substrate 1 (containing Na-22 tracer)/layer/substrate 2. Diffusion annealing of such sandwiches led to a redistribution of the sodium tracer. This redistribution was analyzed experimentally with regard to the sodium tracer diffusion coefficient in the bulk and the rate of the sodium tracer transfer across the layer. It was found that all three types of layers considered act as barrier layers, i.e., they suppress the exchange of Na ions between glass substrates. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1402151
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  • 37
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    Digitale Medien
    Crystallization kinetics of sputter-deposited amorphous AgInSbTe films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3816-3821 
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    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: AgInSbTe films have recently attracted considerable interest as advanced materials for phase change recording. For this application the determination of crystallization kinetics is of crucial importance. In this work the temperature dependence of structural and electrical properties of sputtered AgInSbTe films has been determined. Temperature dependent measurements of the electrical resistance have been employed to study the kinetics of structural changes of these films. Upon annealing a major resistivity drop is observed at around 160 °C which can be attributed to a structural change as corroborated by x-ray diffraction. X-ray diffraction shows an amorphous phase for as-deposited films, while crystalline films with hexagonal structure (a=4283 Å, c=16 995 Å) are obtained upon annealing above 160 °C. By applying Kissinger's method, an activation energy of 3.03±0.17 eV is obtained for the crystallization. X-ray reflection measurements reveal a density increase of 5.2%±0.2% and a thickness decrease of 5.5%±0.2% upon crystallization. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1405141
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  • 38
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    Digitale Medien
    Generalized anisotropic ellipsometry applied to an organic single crystal: Potassium acid phthalate (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3838-3842 
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    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The results of generalized anisotropic ellipsometry on a biaxial organic single crystal, namely, potassium acid phthalate, are discussed and analyzed to obtain the optical functions of the crystal along the different crystal directions. The dispersion of the real refractive indices nx, ny, and nz in the spectral range from 300 to 1400 nm, as well as the values of the extinction coefficient kx,y at the absorption edge are determined and modeled. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1402967
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  • 39
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    Digitale Medien
    Optical properties of Ag and Au nanowire gratings (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3825-3830 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The optical response of regularly arranged noble metal wires with nanoscopic cross sections (nanowire gratings) strongly depends on the polarization direction of the incident light. We use silver and gold nanowire gratings produced by electron beam lithography to study this effect by optical extinction spectroscopy. For a polarization direction perpendicular to the wire axis, the excitation of a dipolar plasmon mode dominates the extinction spectrum. The spectral position of the plasmon resonance can be tuned by an appropriate choice of nanowire geometry and material. For a polarization direction parallel to the wire axis, the profile of the extinction spectrum varies mainly as a function of the grating constant. In particular, a transmission maximum for small grating constants is found. By combining the surface plasmon excitation and grating effect for orthogonal polarization directions, a spectrally selective polarizer with an extinction ratio of 26 is demonstrated. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1404425
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  • 40
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    Chemical vapor deposition of Si on chlorosilane-treated SiO2 surfaces. II. Selective deposition in the regions defined by electron-beam irradiation (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3887-3893 
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    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: This article reports a selective-area deposition process using chlorosilane-treated ultrathin SiO2 masks on which the patterns are directly defined by irradiation of a focused electron beam (EB). Three different chlorosilane gases (SiH2Cl2, SiHCl3, and SiCl4) were first adsorbed on the SiO2 surfaces, and the regions with reactive sites were defined by taking advantage of electron-stimulated desorption (ESD) of the surface adsorbates. For the SiHCl3- and SiH2Cl2-treated surfaces, the nucleation density was remarkably high in the EB-irradiated regions. Such nucleation enhancement was less significant for the SiCl4-treated surface. For the purpose of direct patterning and selective growth, we conclude that SiHCl3 is the optimum treatment gas because it effectively suppresses Si nucleation outside of the EB-irradiated patterns. The overall ESD sensitivity of the SiHCl3-adsorbed mask was 50 mC/cm2, and a significant nucleation enhancement was observed by irradiation of 7 mC/cm2. We also report an extension of this selective-area processing to window opening through the ultrathin SiO2 mask layer. The factors limiting the minimum feature size of the grown Si structures and the opened windows are discussed. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1402978
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  • 41
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    Deformation behavior of coherently strained InAs/GaAs(111)A heteroepitaxial systems: Theoretical calculations and experimental measurements (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2689-2698 
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    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A comprehensive, quantitative analysis is presented of the deformation behavior of coherently strained InAs/GaAs(111)A heteroepitaxial systems. The analysis combines a hierarchical theoretical approach with experimental measurements. Continuum linear elasticity theory is linked with atomic-scale calculations of structural relaxation for detailed theoretical studies of deformation in systems consisting of InAs thin films on thin GaAs(111)A substrates that are mechanically unconstrained at their bases. Molecular-beam epitaxy is used to grow very thin InAs films on both thick and thin GaAs buffer layers on epi-ready GaAs(111)A substrates. The deformation state of these samples is characterized by x-ray diffraction (XRD). The interplanar distances of thin GaAs buffer layers along the [220] and [111] crystallographic directions obtained from the corresponding XRD spectra indicate clearly that thin buffer layers deform parallel to the InAs/GaAs(111)A interfacial plane, thus aiding in the accommodation of the strain induced by lattice mismatch. The experimental measurements are in excellent agreement with the calculated lattice interplanar distances and the corresponding strain fields in the thin mechanically unconstrained substrates considered in the theoretical analysis. Therefore, this work contributes direct evidence in support of our earlier proposal that thin buffer layers in layer-by-layer semiconductor heteroepitaxy exhibit mechanical behavior similar to that of compliant substrates [see, e.g., B. Z. Nosho, L. A. Zepeda-Ruiz, R. I. Pelzel, W. H. Weinberg, and D. Maroudas, Appl. Phys. Lett. 75, 829 (1999)]. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1392966
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  • 42
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    Extracting composition and alloying information of coherent Ge(Si)/Si(001) islands from [001] on-zone bright-field diffraction contrast images (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2725-2729 
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    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Ge(Si)/Si(001) coherent islands grown at 700 °C by molecular beam epitaxy were investigated using transmission electron microscopy. [001] on-zone bright-field diffraction contrast imaging and image simulation techniques were used to investigate the structure of these coherent islands. Comparison of simulated and experimental images indicates nonuniform composition distribution within the coherent islands when the islands were grown at high temperatures (700 °C), but uniform composition for growth at lower temperatures (600 °C). © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1394900
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  • 43
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    Relationship between gain and Yb3+ concentration in Er3+–Yb3+ doped waveguide amplifiers (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4314-4320 
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    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have used a rate equation propagation model of an Er3+/Yb3+ doped Al2O3 waveguide amplifier with copropagating pump at 980 nm to investigate the dependence of gain on Yb3+ concentration. The model includes excited state absorption and energy transfer upconversion processes within the Er3+ as well as the relevant energy transfer processes between Yb3+ and Er3+. The results of the calculations indicate a close relationship of the parameters gain, launched pump power, waveguide length, and Yb3+ concentration. Codoping with a well-chosen Yb3+ concentration is shown to increase the gain around 1530 nm for all combinations of these parameters. The gain is improved most by Yb3+ codoping at pump powers around the amplifier threshold. At high pump powers the increase in gain of an Er3+/Yb3+ doped waveguide is insignificant compared to that of its Er3+ doped counterpart. Furthermore for each launched pump power, a nonzero Yb3+ concentration can be determined, which maximizes the gain. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1406550
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  • 44
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    Design of impurity band-based photonic crystal waveguides and delay lines for ultrashort optical pulses (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4321-4327 
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    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We investigate the transmission of ultrashort pulses through impurity band-based photonic crystal waveguides. It is found that in the general case the transmission behavior depends strongly on the pulse width with respect to the resonance linewidth in impurity bands. By controlling the configuration of the waveguides, quasiflat impurity bands can be obtained in which the dependence of transmission on pulse width is very weak. As long as the pulse width is much narrower than the bandwidth, pulses can transmit through the quasiflat impurity bands with negligible distortion and attenuation. The conditions necessary for achieving quasiflat impurity bands are derived by examining waveguides of different configurations and properties. The mechanism responsible for the formation of quasiflat impurity bands is revealed from the discussion of the symmetry of single defect and their coupling. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1407318
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  • 45
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    Angular effects and beam quality in optical parametric amplification (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4328-4337 
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    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Advances in optical parametric devices, in particular those requiring high conversion efficiency, rely on pump laser and gain medium properties. We describe and theoretically model the source of dephasing due to angular deviation from ideal phase matching in optical parametric amplification. Real laser beams have angular content, which is described by their spatial frequency spectrum. Such beams cannot be treated as single plane waves in nonlinear interactions. Our mathematical model is based on a plane wave decomposition of Gaussian and top-hat beams into their components in spatial frequencies. Several popular nonlinear materials (beta-barium borate, lithium borate, and potassium dihydrogen phosphate) are examined for phase matching angles and dephasing is rigorously calculated. The impact of the beam angular content on small signal gain and on conversion efficiency in the strongly depleted regime is evaluated numerically. In addition, a criterion is formulated for beam quality tolerance in optical parametric amplifiers, for critical and noncritical phase matching. The impact of initial conditions in optical parametric amplification is considered. Our calculations are intended primarily for devices pumped with long (nanosecond) pulses. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1407312
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  • 46
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    Single layer light-emitting devices with high efficiency and long lifetime based on tris(2,2′ bipyridyl) ruthenium(II) hexafluorophosphate (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4338-4345 
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    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In this work, single layer, light-emitting devices have been prepared from pristine tris(2,2′ bipyridyl) ruthenium(II) hexafluorophosphate ([Ru(bpy)3](PF6)2) and blends of [Ru(bpy)3](PF6)2 with glassy polymers such as poly(methylmethacrylate) (PMMA), polycarbonate (PC), and polystyrene. Due to the electrochemical nature of the device operation, a high external quantum efficiency at a low operating voltage is achieved. For pristine devices fabricated with an Al cathode, external quantum efficiencies in the range of 1.2%–1.5% at 100–1000 cd/m2 have been achieved. Such devices, however, show signs of degradation in time when stored in the off state in inert atmosphere. Blending with glassy polymers such as PMMA results in an improved film quality and a slowing of the device degradation which, in return, decreases the leakage current during device operation. Therefore, external quantum efficiencies of 2%–2.5% at a light output of 200 cd/m2 are observed when the electroluminescent tris(2,2′ bipyridyl) ruthenium(II) complex is blended with PMMA or PC. In addition, increased efficiency and lifetime are found when the devices are operated under a 50% duty cycle at 5 V and 1 kHz compared to the operation under constant voltage. With a 50% duty cycle, half lives of around 500–1100 h continuous operation have been achieved at luminance levels in the range of 200–350 cd/m2. When Ag is used as the cathode material, PMMA blend devices exhibit external quantum efficiencies in the range of 2.5%–3.0% at luminance levels of around 50 cd/m2. In addition, devices with a Ag cathode show no signs of degradation when stored in the off state. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1409577
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  • 47
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    Digitale Medien
    Two-dimensional electrical modeling of asymmetric radio-frequency discharges for geometry effect analysis. Comparison with experiments (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4346-4354 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A self-consistent two-dimensional particle model coupled to the external circuit equations was developed in an asymmetrical configuration for the self-bias voltage calculation and the reactor design study. An intermediate modeling was performed in one and two symmetrical geometries. The one-dimensional model is used to optimize the computing time which is reduced by a factor of 10 by using some optimization techniques. It is also used to validate the charged particle and basic data choices. We have shown that the consideration of only two charged particle species (electron and H3+ positive ion) is sufficient in the present hydrogen radio-frequency discharge modeling. Computational results (i.e., power density and self-bias voltage) are in good agreement with experimental results. A strong gradient of the plasma parameters (such as electric field, potential, charged particle densities and energies) was observed in the periphery of the driven electrode. Furthermore, the present two-dimensional asymmetric model shows that the interelectrode distance increase (from 1.7 up to 3.7 cm) can lead to reducing the plasma heterogeneity due to the geometrical electric field. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1389338
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  • 48
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    Digitale Medien
    Large room-temperature magnetoresistance and phase separation in La1−xNaxMnO3 with 0.1≤x≤0.3 (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2943-2948 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The structural, magnetic, and electronic properties of the polycrystalline La1−xNaxMnO3 (x=0.10, 0.15, 0.20, and 0.30) are investigated. The result of the Rietveld refinement of x-ray powder diffraction shows that these compounds crystallize in a rhombohedrally distorted structure with space group R3¯C. The magnetic measurement shows that Curie temperature TC of the studied samples is near or above room temperature. The temperature dependence of resistivity shows that all samples undergo a sharp transition accompanying a paramagnetic to ferromagnetic with the decrease of temperature, however, for x≥0.15 samples, double transition peaks with a single ferromagnetic transition is observed. In the meanwhile, a large room-temperature magnetoresistance with low applied magnetic field is observed. The co-existing ferromagnetic metallic phases and ferromagnetic insulating (FMI) phases induced by the electronic inhomogeneity as well as the additional FMI phases caused by the presence of vacancies at the A sites, are presented to account for the transport properties and large magnetoresistance in these compounds. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1396823
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  • 49
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    Digitale Medien
    Molecular dynamics simulation of stick-slip (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3090-3094 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Molecular dynamics simulation was carried out to investigate the stick-slip on an atomic scale by using the embedded atom method potential for Ni–Al. The analyses of the dynamic features of the atoms in the sliding block clearly show that the elastic deformation of the surface layers is the main cause for the stick-slip phenomenon, which is consistent with the macroscopic stick-slip. The simulation results also indicate that phonons are emitted during stick-slip, and a commensurate fit between the contacting surfaces is not significant for the stick-slip friction. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1394916
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  • 50
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    Digitale Medien
    Modified atomic force microscope applied to the measurement of elastic modulus for a single peptide molecule (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3095-3099 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A modified atomic force microscopy (AFM) system, based on a force modulation technique, has been used to find an approximate value for the elastic modulus of a single peptide molecule directly from a mechanical test. For this purpose a self-assembled monolayer built from two kinds of peptides, reactive (able to anchor to the AFM tip) and nonreactive, was synthesized. In a typical experiment a single C3K30C (C=cysteine, K=lysine) peptide molecule was stretched between a Au(111) substrate and the gold-coated tip of an AFM cantilever to which it was attached via gold–sulfur bonds. The amplitude of the cantilever oscillations, due to an external force applied via a magnetic particle to the cantilever, was recorded by a lock-in amplifier and recalculated into stiffness of the stretched molecule. A longitudinal Young's modulus for the α-helix of a single peptide molecule and for the elongated state of this molecule has been estimated. The obtained values; 1.2±0.3 and 50±15 GPa, for the peptide α-helix and elongated peptide backbone, respectively, seem to be reasonable comparing them to the Young's modulus of protein crystals and linear organic polymers. We believe this research opens up a means by which scientists can perform quantitative studies of the elastic properties of single molecule, especially of biologically important polymers like peptides or DNA. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1397287
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  • 51
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    Digitale Medien
    Energetics and effects of planar defects in CdTe (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3952-3955 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The formation energies of planar defects such as lamellar twins and intrinsic and extrinsic stacking faults in CdTe are calculated using first-principles total-energy calculations. We find that the formation energies, 16 erg/cm2 for lamellar twins and 34 and 31 erg/cm2 for intrinsic and extrinsic stacking faults, are very small. This explains why high densities of planar defects are always present in the fast-grown CdTe thin films. The effects of the planar defects on the formations of important point defects in p-type CdTe are also investigated. We find that the planar defects have negligible effects on Cd vacancies and substitutional Cu, whereas they lower the formation energy of Te antisites by about 0.1 eV compared to the perfect regions. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1405138
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  • 52
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    Digitale Medien
    Dispersion-related assessments of temperature dependences for the fundamental band gap of hexagonal GaN (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3956-3964 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have analyzed a series of data sets available from published literature for the temperature dependence of A and B exciton peak positions associated with the fundamental band gap of hexagonal GaN layers grown on sapphire. In this article, in contrast to preceding ones, we use the dispersion-related three-parameter formula Eg(T)=Eg(0)−(αaitch-theta/2)[(1+(π2/6)(2T/aitch-theta)2+(2T/aitch-theta)4)1/4−1], which is a very good approximation in particular for the transition region between the regimes of moderate and large dispersion. This formula is shown here to be well adapted to the dispersion regime frequently found in hexagonal GaN layers. By means of least-mean-square fittings we have estimated the limiting magnitudes of the slopes, S(T)≡−dEg(T)/dT, of the Eg(T) curves published by various experimental groups to be of order α≡S(∞)(approximate)(5.8±1.0)×10−4 eV/K. The effective phonon temperature has been found to be of order aitch-theta(approximate)(590±110) K, which corresponds to an ensemble-averaged magnitude of about 50 meV for the average phonon energy. The location of the latter within the energy gap between the low- and high-energy subsections of the phonon energy spectrum of h-GaN suggests that the weights of contributions made by both subbands to the limiting slope α are nearly the same. This explains the order of Δ(approximate)0.5–0.6 as being typical for the dispersion coefficient of the h-GaN layers under study. The inadequacies of both the Bose–Einstein model (corresponding to the limiting regime of vanishing dispersion Δ→0) and Varshni's ad hoc formula (corresponding to a physically unrealistic regime of excessively large dispersion Δ(approximate)1) are discussed. Unwarranted applications of these conventional models to numerical fittings, especially of unduly restricted data sets (T≤300 K), are identified as the main cause of the excessively large scatter of parameters quoted for h-GaN in various recent articles. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1402147
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  • 53
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    Digitale Medien
    Time domain analysis of a rational harmonic mode locked ring fiber laser (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2143-2147 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In this article, we present a theory of the pulse train generated by a rational harmonic mode locked ring fiber laser. The pulse width is calculated as a function of the rational harmonic order and the optical transfer function of the modulator. The theoretical work is based on a time domain analysis, which predicts that the pulse width decreases when the rational harmonic order goes up. The pulse width as a function of the modulation amplitude and bias level of the modulator was measured, and the experimental results agree with the theory. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1390304
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  • 54
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    Digitale Medien
    Xerographic and electroabsorption study of primary photocarrier generation process in x-form metal-free phthalocyanine (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3984-3987 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Using a dual-layered photoconductor, we have investigated the primary photocarrier generation process in x-form metal-free phthalocyanine (x-H2Pc) over a wide range of illumination wavelengths. According to the results of quantum efficiency measurements, it has been established that the photocarrier generation mechanism in x-H2Pc occurs via two processes: (i) production of an intermediate that depends solely on the excitation energy, and (ii) subsequent free carrier production in the presence of an electric field. In addition, the spectral quantum efficiency and the electroabsorption spectrum were measured and compared. Based on that, the primary process efficiency was divided into four regions in terms of photon energy, which explained well the relationship between them. The excitation energy dependence of the primary efficiency was semiquantitatively validated based on the electron transfer theory. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1403674
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  • 55
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    Digitale Medien
    Effect of impurity band conduction on the electrical characteristics of n-type CuInSe2 (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3993-3997 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The Hall effect and electrical resistivity of n-type CuInSe2 single crystals are measured between 4.2 and 300 K. Using a single conduction band model, the variation of the electron concentration with temperature above 100 K is explained in terms of the thermal activation of a shallow donor. The density of states effective mass me*=0.09me of the electrons, the activation energy of the donors around 7 meV, their concentration, and the compensation ratio are estimated. The temperature dependence of the electron mobility in conduction band is analyzed by taking into account the scattering of the charge carriers by ionized impurities and acoustic and polar optical phonon modes. The adjustable parameters, thus obtained, are compared with those reported earlier. On the other hand, by considering the two-band model with electrons in both the conduction and impurity bands, the change in the Hall coefficient with temperature between 300 and 40 K is explained. It is found that at the temperature where the Hall coefficient is maximum, the mobility in the impurity band is about 20% as compared to its value in the conduction band. The width of the impurity band is found to increase with increasing impurity concentration and the electron mobility below 20 K is explained by considering the effect of Mott-type variable range hopping conduction. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1403666
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  • 56
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    Digitale Medien
    Contribution of injection in current noise due to generation and recombination of carriers in p–n junctions (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3998-4006 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A theory for the current noise associated with carrier generation and recombination in the space-charge region of p–n junctions is presented. We propose a noise model based on the response of the electric field to fluctuations of the trapped charge in this region, and make use of a collective transport-noise theory. The effects of the fluctuations of the space-charge region borders due to the fluctuations of the trapped charge are now taken into account. This new contribution is negligible when generation–recombination current governs the diode current. However, it is significant when diffusion current dominates, allowing the analytical study of generation–recombination noise to be extended to wider ranges of bias and temperature. Experimental results at low and high temperatures are explained with our theory. Empirical formulas of current noise density are also explained according to this complete theory of current noise calculation. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1403676
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  • 57
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    Digitale Medien
    Tuning the hopping conductivity of WO3 films by ion bombardment at different temperatures (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4007-4018 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: WO3 films, either prepared by sputtering or evaporation under high or ultrahigh vacuum conditions, were irradiated with He+ and Ar+ ions (energy range 300–350 keV) at ambient and low temperatures (77–100 K). The resulting ion induced changes of the optical absorption as well as of the electrical conductivity could be determined on one and the same sample, which enables the variable range hopping (VRH) model to be tested under the assumption that the density of irradiation induced color centers is proportional to the electronic density of states contributing to the hopping conductivity. It is found that the data obtained at 300 K for He+ and Ar+ bombardment can be described within the VRH model by one common conductivity versus absorption curve, even though the effectiveness per projectile of the heavier ion for coloration as well as for increasing the conductivity is much higher. This is different at low temperatures. While the ion induced coloration is practically independent of the irradiation temperature for both projectiles, the effectiveness per projectile to enhance the conductivity is interchanged. This is attributed to the additional damage produced by the heavier ion at low temperatures resulting in strongly impeded hopping processes. Consistent with the VRH model, the temperature dependence of the conductivity of ion bombarded WO3 films follow the Mott "T−1/4" law, if the ion induced conductivity is not too high. For very high ion fluences clear deviations from the VRH model are observed for the conductivity versus absorption curves accompanied by a shift of the above power laws from T−1/4 towards T−1/2. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1380215
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  • 58
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    Digitale Medien
    Existence and atomic arrangement of the CuPt-type ordered structure near the ZnTe/GaAs heterointerface due to residual impurities (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4027-4031 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Transmission electron microscopy (TEM) and selected area electron diffraction pattern (SADP) measurements were carried out to investigate the ordered structures near ZnTe/GaAs heterointerfaces, and Auger electron spectroscopy (AES) and secondary ion mass spectroscopy (SIMS) measurements were performed to determine the compositions of the ZnTe/GaAs interfacial layer. The SADP showed two sets of {〈fraction SHAPE="CASE"〉12 〈fraction SHAPE="CASE"〉12 〈fraction SHAPE="CASE"〉12} extra spots with symmetrical intensity, and the corresponding high-resolution TEM image showed doublet periodicity in contrast of the {111} lattice planes. The results of the SADP and the high-resolution TEM measurements showed that a CuPt-type ordered (Cd, Zn)Te structure was observed near the ZnTe/GaAs heterointerface, and the AES and SIMS results showed that the ordered structure was formed due to the diffusion of Cd atoms into the ZnTe layer. Two variants, one for each direction of the doublet periodicity on the {111} lattice, were observed in the ordering, and each variant had its own domain structure with a similar probability. The formation of the CuPt-type ordered structure near the ZnTe/GaAs heterointerface originated from both the existence of the Cd residual impurities during the initial growth stage of the ZnTe epilayer and the strain relaxation of the ZnTe epilayer. These results can help to improve the understanding of the microstructural properties of the ZnTe/GaAs heterointerface. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1405820
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  • 59
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    Digitale Medien
    Tunnel magnetoresistance and magnetic ordering in ion-beam sputtered Co80Fe20/Al2O3 discontinuous multilayers (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4044-4048 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Discontinuous multilayered Co80Fe20(t)/Al2O3(30 Å) thin films have been prepared by ion-beam sputtering. We report on structural, magnetic, and transport (for current in plane geometry) results obtained in this system. With growing nominal thickness t of the metal layers, which effectively characterizes the granular structure, a transition from tunnel to metallic conductance is observed, indicating the onset of infinite conducting paths at t〉18 Å. At t〈18 Å, that is within the range of tunnel regime, a different characteristic value t〉13 Å was detected from the magnetization data which display here a transition from superparamagnetic to ferromagnetic behavior. The measurements of tunnel magnetoresistance (MR) show that a sharp maximum of MR sensitivity to field takes place at this thickness, reaching ∼24%/kOe at room temperature. At least, MR itself as a function of t has a break at the same value. All these features suggest that some specific kind of percolation with respect to magnetic order occurs in our system when the disordered granular structure is still well separated, as confirmed by the data of high resolution transmission electron microscopy. Hence such magnetic percolation is clearly distinct from usual electrical percolation in these discontinuous layers. At the same time, the highest MR (∼6.5% at room temperature) in this series is attained with decreasing t only at t=10 Å. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1399029
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  • 60
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    Digitale Medien
    Mechanisms of noise increase in direct-coupled high Tc superconducting quantum interference device magnetometers exposed to magnetic fields (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4049-4055 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have investigated the behavior of high-critical-temperature (high Tc) direct-coupled superconducting quantum interference device (SQUID) magnetometers in static and fluctuating magnetic fields. The magnetometers consist of narrow-linewidth superconducting films to prevent flux trap during field cooling. Moreover, they have no superconducting films crossing the bicrystal lines of the substrates (except at the Josephson junctions); i.e., they have no flux dams. When one of these magnetometers was cooled in a static magnetic field Bcool, the low-frequency noise when Bcool〈100 μT was as low as that under zero-field cooling, but above 100 μT the noise increased substantially. On the other hand, when a field Bext of less than 4 μT was applied after zero-field cooling, the low-frequency noise increased in proportion to Bext. It returned to its original value reversibly when Bext was turned off. However, when Bext was greater than or equal to 4 μT, the output of the flux-locked-loop started to drift with time and the low-frequency noise increased further. This additional noise increase remained after turning off Bext. These results suggested that there are two modes of increase for the low-frequency noise induced by flux penetration due to the shielding current: a "reversible" mode and an "irreversible" mode. We found that the low-frequency noises of the two modes were additive with respect to their power, suggesting that the two noises derived from independent sources at different sites on the magnetometer. We also found that the reversible-mode noise could be reduced by improving the profile of the film edge. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1403680
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  • 61
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    Digitale Medien
    Strong unidirectional anisotropy in mechanically alloyed spinel ferrites (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4078-4084 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Cluster glass and relatively high coercivity at low temperatures were found in disordered ultrafine nickel ferrite powders. High-energy mechanical milling of spinel NiFe2O4 led to formation of a wüstitelike structure. Our investigation suggested that ferrimagnetic clusters formed in an antiferromagnetic matrix. The strong ferri/antiferromagnetic exchange coupling resulted in a strong unidirectional anisotropy and a coercivity of over 10 kOe at 4.2 K. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1405834
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  • 62
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    Digitale Medien
    Enhancement of magnetic surface anisotropy of Pd/Co/Pd trilayers by the addition of Sm (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4085-4088 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have studied the effect of Sm on the magnetic surface anisotropy (MSA) of Pd/Co100−xSmx/Pd (111) trilayers, where Sm content x was varied from 0 to 11. All samples show perpendicular anisotropy due to the strong MSA at the interfaces. The MSA significantly increases with x and attains a maximum value of 0.60 erg/cm2 at x(similar, equals)8.3, which is 36% larger than that of pure Co (x=0). The volume term of the magnetic anisotropy shows a similar behavior as the MSA. The appreciable increase in MSA is considered to be due to the enhancement of orbital moment of Co by the addition of Sm. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1405817
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  • 63
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    Digitale Medien
    Domain formation in epitaxial Pb(Zr, Ti)O3 thin films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4095-4102 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Ferroelectric twin-domain structures in epitaxial Pb(Zr, Ti)O3 (PZT) thin films grown on various single-crystal substrates such as MgO(001), KTaO3(001), and SrTiO3(001) were investigated by two-dimensional reciprocal space mapping using synchrotron x-ray diffraction. Each system showed a characteristic domain structure. PbTiO3 thin films grown on MgO(001) showed highly c-axis oriented domain structures consisting of a periodic array of 90° twinlike domains. Perfectly c-axis oriented films were obtained on SrTiO3(001), while the films grown on KTaO3(001) showed a-domain dominant structures with a small amount of c domains embedded in matrix a domains. Contributions of net elastic strain stored in each heteroepitaxial layer and its relaxation to the final domain structures were evaluated considering thermodynamic equilibrium relief of coherency strain by misfit dislocation generation at the film growth temperature. A comparison between theoretical consideration and experimental results clearly demonstrates that the nature of effective misfit strain and its relaxation during film growth play a critical role in the formation of domain structures in epitaxial PZT thin films. Moreover, it was verified that the control of such critical strain factors by changing film composition could modify dominant domain structures in a drastic way. In addition, it was found that the crystalline quality of the films is closely correlated to the tilting nature of the domain structure in each system and coherency strain across the 90° domain boundary is accommodated mainly by the domain tilt of the minor domain. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1404424
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  • 64
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    Digitale Medien
    Relaxation effect of electron inertial delay in an ion-beam plasma system (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3200-3204 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In this article an interesting result has been reported to highlight the physical implication of finite nonzero electron inertial delay in acoustic oscillations of an ion-beam plasma system. A simple fluid model has been used to demonstrate the excitation of relaxation type resonant instability on the electron inertial delay time scale. Physical arguments have been included to understand and explain the driving mechanism of the instability and its utility to comprehend the ion-beam driven oscillations in plasma sheath experiments. The physical nature and origin of the potential relaxation instability has been correlated to the electron inertial delay effect in the ion current carrying plasma system. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1397284
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  • 65
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    Digitale Medien
    Effect of Ar addition to an O2 plasma in an inductively coupled, traveling wave driven, large area plasma source: O2/Ar mixture plasma modeling and photoresist etching (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3205-3211 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report on the effect of Ar addition to an O2 plasma on photoresist etching in an inductively coupled, traveling wave driven, large area plasma source (LAPS). We also develop a simplified spatially varying O2/Ar mixture discharge model corresponding to the LAPS in a two-dimensional geometry in order to account for the effect of Ar addition. A photoresist etch kinetics model and spatially varying O2/Ar mixture discharge model are used to explain the experimental data. We find that the addition of 50% Ar increases the plasma density and etch rate approximately by a factor of 2. From the simulation we find that argon metastables (Ar*) play an important role in the mixture plasma. The simulation predicts an enhancement in O-atom density due to Ar addition, even in the presence of dilution of the feed gas. The experimental data and predicted etch rates from the simulation are generally in good agreement, indicating that the increase in the etch rate with Ar addition is due to both the increase in the plasma density and the enhancement in O-atom density attributable to the dissociation of O2 by Ar*. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1398600
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  • 66
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    Digitale Medien
    Single-gap pseudospark discharge experiments (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3212-3218 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: An experimental investigation of a single-gap pseudospark was conducted using a flexible discharge chamber. The voltage breakdown characteristics were studied against a wide range of parameters such as gas pressure, gap separation, cathode cavity depth, cathode aperture size, external capacitance and applied voltage. An empirical formula, VB=(0.20±0.05) p−4.02±0.18 d−1.77±0.01, was obtained for the breakdown voltage VB in kV, given the gas pressure p in Torr and the gap separation d in mm. The electron beam extracted from this single gap was also studied and a current of up to 100 A was measured at 10 kV. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1398065
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  • 67
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    Digitale Medien
    Thermal evolution of the magnetization in nanocrystalline Fe particles investigated by electron holography (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4152-4158 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Micrometric, irregularly shaped Fe particles with a nanocrystalline structure have been prepared by mechanical attrition through ball-milling. Electron holography has been employed to visualize the stray field emerging from isolated Fe particles, both at 300 K and at selected temperatures T≤1200 K, from which indirect information on the magnetic domain configuration has been inferred. By complementary x-ray diffraction and transmission electron microscopy investigations a relationship has been established between the changes of the leakage field and of the microstructure upon annealing: it indicates that the structural evolution is accompanied by strong modifications in the interior magnetization pattern. This relationship finds explanation in the framework of the random anisotropy model, including temperature-induced reversible variations in the exchange correlation length and saturation magnetization. Moreover, the role played by the overall geometrical features of the particles in the determination of the actual domain configuration has been investigated. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1401797
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  • 68
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    Digitale Medien
    (Fe–Co)–(Mg-fluoride) insulating nanogranular system with enhanced tunnel-type giant magnetoresistance (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4159-4162 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Insulating nanogranular-type tunnel magnetoresistive thin films made of (Fe or Fe–Co)–(Mg-fluoride) have been investigated. The films were prepared by a tandem deposition method, using Fe, Co, or Fe+Co metal and MgF2 insulator targets. The granular structure was found to consist of Fe or Fe–Co based nanogranules surrounded by thin intergranules of Mg based fluoride with the MgF2 crystal structure. A magnetoresistance value of 13.3% at room temperature and 10 kOe, the largest values ever reported, were obtained at the compositions of 32 vol %(Fe0.51Co0.49)–(Mg–F). To increase the magnetic field sensitivity of the magnetoresistance, a granular-in-gap film consisting of an (Fe–Co)–(Mg–F) granular thin film filling a narrow gap in a soft magnetic Permalloy thin film was prepared. A remarkably high magnetoresistance of 4% or more at 1–2 Oe was obtained. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1376415
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  • 69
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    Digitale Medien
    Crystal size and temperature measurements in nanostructured silicon using Raman spectroscopy (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4175-4183 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In this work we present a detailed structural characterization by Raman spectroscopy of hydrogenated amorphous silicon (a-Si:H) and of nanostructured silicon (ns-Si:H) thin films grown in radio-frequency plasma. The ns-Si:H thin films, also called polymorphous Si thin films, consist of a two-phase mixture of amorphous and ordered Si. The Raman spectra were measured at increasing laser intensities. Very low laser power densities (∼1 kW/cm2) were used to thoroughly analyze the structure of as-deposited thin films. Higher Raman laser powers were found to induce the crystallization of the films, which was characterized by the appearance of a sharp peak around 500 cm−1. This was attained faster in the ns-Si:H than in the conventional a-Si:H thin films because the silicon-ordered particles cause a heterogeneous nucleation process in which they act as seeds for crystallization. The laser power densities for film crystallization, crystal size, and surface temperature were determined from this Raman analysis. The validity and application ranges of the different models that can be used to calculate these parameters are critically discussed. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1398601
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  • 70
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    Digitale Medien
    Electrical properties of metal/porous silicon/p-Si structures with thin porous silicon layer (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4184-4190 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Porous silicon (PS) based metal/PS/p-Si structures with PS layer of different thickness were prepared on moderate- and high-resistivity substrates. Measurements of current–voltage (I–V) characteristics and impedance at various temperatures were used for the investigation of the electrical properties of these structures. Electrical properties of the structures with relatively thin (1 μm) PS layer significantly differ from those of thick structures. The exponential forward bias I–V dependencies for thin structures spread over several orders of magnitude with a low value of quality factor (close to 2) and have activation temperature dependencies with an activation energy equal to half the c-Si band gap. The reverse current has a square root dependence on the reverse bias voltage and the activation energy is equal to half the c-Si band gap. Therefore, it was concluded that the reverse and forward currents in thin PS-based device structures were determined by the generation and recombination of carriers in the depletion region of the c-Si substrate. It was shown that a large area spreading current exists in structures made on highly resistive substrates, which appears to be due to a highly conductive inverse (n-type) layer formed in the p-Si substrate at the PS/p-Si heterojunction. The spreading effect leads to high reverse currents and high capacitance of the device structures made on highly resistive substrates. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1402670
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  • 71
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    Digitale Medien
    Photoemission spectroscopy of size selected zinc sulfide nanocrystallites (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2504-2510 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report photoemission spectroscopic studies of zinc sulfide nanocrystallites in the quantum size regime. The nanocrystallites studied have average sizes of 1.8, 2.5, and 3.5 nm and narrow size distributions as determined from UV-visible absorption spectroscopy, as well as x-ray diffraction and high-resolution transmission electron microscopy. Analysis of sulfur core levels from the nanocrystallites show the presence of the three types of sulfur species corresponding to the core, the surface, and the capping layer of the nanocrystallites. We show that a quantitative analysis of these different sulfur components can be used to estimate the sizes of the nanocrystallites; thus, the obtained sizes are in good agreement with the sizes determined independently from small angle x-ray diffraction and high-resolution electron microscopy. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1389521
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  • 72
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    Digitale Medien
    Nanoporous structure of methyl-silsesquioxane films using monoenergetic positron beams (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2498-2503 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The size and depth distributions of pores in silica-based intermetal-dielectric materials were studied using monoenergetic positron beams. Doppler broadening spectra of the annihilation radiation and lifetime spectra of positrons were measured for methyl-silsesquioxane (MSSQ) spin-on-glass films. The size distribution of pores in the MSSQ films fabricated with 8% porogen load was found to be bimodal, with the major peaks located at 3 and 8 nm3. Increasing the porogen load from 8% to 40% caused the smaller pores (3 nm3) to disappear and 30-nm3 ones to appear; these pores were considered to be interconnected, and this structure makes it possible for positronium (Ps) atoms to find paths towards the surface and to escape into vacuum. The 8%-porogen MSSQ films had low porosity near the Si substrate. From measurements of the temperature dependence of the self-annihilation rate of ortho-Ps, we discuss the relationship between o-Ps emission into vacuum and the pore structure. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1388858
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  • 73
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    Digitale Medien
    Generally polarized acoustic waves trapped by high aspect ratio electrode gratings at the surface of a piezoelectric material (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2492-2497 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: It has been shown theoretically and demonstrated experimentally that shear horizontal (SH) surface waves can exist when the surface of an isotropic substrate is perturbed by a strong corrugation, for instance consisting of deep grooves etched in the substrate, whereas these waves cannot exist without this perturbation. It is shown in this article that a periodic array of metallic electrodes (wires) exhibiting large aspect ratios deposited over a piezoelectric substrate give rise to surface acoustic waves with general polarization. The admittance of an interdigitated transducer, which is a basic tool for predicting the waves parameters, is calculated by a combination of finite element analysis and a boundary integral method. This approach has been extended to obtain the polarization of the acoustic waves. For different piezoelectric substrates, we predict various surface acoustic modes and their polarization. Along with mostly SH modes, we also find modes mostly polarized in the sagittal plane. We discuss the frequency behavior of the surface modes as a function of the electrode height compared to the period. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1394160
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  • 74
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    Digitale Medien
    X-ray absorption spectroscopy and magnetic circular dichroism of the Mn-ferrite nanocrystalline thin films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2511-2516 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The nanocrystalline MnxFe3−xO4 (x=0, 1.18, 1.56, and 1.9) spinel ferrite thin films were investigated by means of the x-ray absorption spectroscopy and x-ray magnetic circular dichroism at the Mn and Fe L2,3 edges. The cationic distributions of thin spinel ferrite films for x=1.18 and 1.56 were determined using a crystal field atomic multiplets scheme for arbitrary symmetry. The results are compared with the distribution of cations obtained from the differential thermogravimetry analysis of fine powders of corresponding compositions. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1389519
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  • 75
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    Digitale Medien
    Nucleation of Ga2O3 nanocrystals in the K2O–Ga2O3–SiO2 glass system (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2522-2527 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A multitechnique approach, consisting of x-ray diffraction, differential thermal analysis, low frequency Raman scattering from the acoustic vibrations of nanoclusters, and transmission electron microscopy associated with selected area diffraction, has been used to study the nucleation and crystallization processes in SiO2–Ga2O3–K2O glasses. The specific aim was to determine the structure and the size distribution of nanoparticles embedded in the glass matrix. It has been found that nearly spherical nanocrystals of β-Ga2O3, with a size of ∼2–3 nm, nucleate during thermal treatments at 900 °C. Crystallization was observed after annealing at higher temperature. The amount of the crystalline phase and the mean size of the nanocrystals increased with heat treatment, time and temperature. β-Ga2O3 was the only crystalline phase to appear in all glass samples. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1365426
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  • 76
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    Digitale Medien
    Optical properties of CeO2 films prepared from colloidal suspension (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2517-2521 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Optical absorption of nanocrystalline thin films can be influenced by the presence of both porosity and grain size effects. If both are present simultaneously, their effects are difficult to separate. In this study it is shown that the combination of uv-vis transmittance and reflectance measurements on porous CeO2 films provides enough data to make this separation. The CeO2 films were prepared by deposition of nanosized (∼5 nm) particles from a water colloidal suspension onto sapphire and subjecting these films to sintering temperatures sufficiently high to provide a series of films with a typical thickness of 0.6 μm with a wide range of grain sizes and porosity. X-ray diffraction, scanning electron microscopy, ellipsometry, and profilometry were used to characterize the films and to compare the observed grain sizes and porosity with that obtained from optical measurements. All of the techniques used gave results on porosity and grain size which were in good agreement, from 15% to 50% and 5 to 65 nm, respectively. For these porous films it was found that the changes in absorption which are normally explained by quantum confinement effects due to the small crystallite size can be attributed primarily to changes in porosity rather than in grain size. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1389329
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  • 77
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    Digitale Medien
    The effect of thermal annealing on the properties of Al–AlOx–Al single electron tunneling transistors (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2528-2532 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The effect of thermal annealing on the properties of Al–AlOx–Al single electron tunneling transistors is reported. After treatment of the devices by annealing processes in forming gas atmosphere at different temperatures and for different times, distinct and reproducible changes of their resistance and capacitance values were found. According to the temperature regime, we observed different behaviors with regard to the resistance changes, namely the tendency to decrease the resistance by annealing at T=200 °C, but to increase the resistance by annealing at T=400 °C. We attribute this behavior to changes in the aluminum oxide barriers of the tunnel junctions. The good reproducibility of these effects with respect to the changes observed allows the proper annealing treatment to be used for postprocess tuning of tunnel junction parameters. Also, the influence of the annealing treatment on the noise properties of the transistors at low frequency was investigated. In no case did the noise figures in the 1/f regime show significant changes. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1389077
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  • 78
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    Digitale Medien
    Strong impact of x-ray radiation associated with electron beam metallization of diamond devices (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2533-2537 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Electron-beam evaporation of metal contact is commonly used in the fabrication of semiconductor devices. We have observed that device irradiation by x-ray photons, which are generated by electrons striking the metal (titanium or gold) to be evaporated, has a strong impact on the characteristics of diamond devices used for radiation detection. It results in an improvement of the detector charge collection efficiency by a factor of 1.5 with respect to nonirradiated devices (standard thermal evaporation). Thermally stimulated current measurements showed that this effect is related to deep trap filling by free carriers generated in diamond by x-ray photons impinging the device during e-beam evaporation. Trap filling results in an increase of the free carrier drift distance before trapping. Study of contact annealing and the thermal stability of trap filling showed that charge detrapping at temperatures above 200 °C annihilates the observed detector sensitivity improvement. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1338515
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  • 79
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    Digitale Medien
    Treatment of soft threshold in impact ionization (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2538-2543 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The avalanche multiplication and excess noise properties of a range of submicron Si diodes have been measured and analyzed using a model for impact ionization which includes the effect of dead space, modified to allow for a gradual onset of ionization, with realistic threshold energies. Good agreement is achieved between the predictions of this "soft dead space" model and measurements of multiplication and excess noise, both on a range of submicron diodes with uniform electric fields and also on a p+n diode with a highly nonuniform electric field. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1388865
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  • 80
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    Digitale Medien
    Characterization of process-induced lattice distortion in silicon by double-crystal x-ray topography using a curved collimator (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 670-674 
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    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Instead of the conventional flat collimator a curved collimator was used in double-crystal x-ray topography. The curvature of the collimator was adjusted so that the Bragg condition for x-ray diffraction was uniformly satisfied over a wide area of the silicon wafer. The image area of the wafer was wide enough to characterize the local lattice distortion induced by test element groups of metal–oxide–semiconductor capacitors formed on the wafer. The lattice distortion was measured as variations in lattice plane spacing and in lattice plane orientation using local angular deviations from the Bragg condition. These angular deviations were determined by fitting the x-ray intensities measured at the same point on a series of topographs taken around the Bragg peak to the rocking curve of the sample. The lattice plane spacing changed abruptly by 10−6 at the boundary between the areas of gate oxide (11 nm thick) and the areas of field oxide (400 nm thick), and showed less variation within these areas. The lattice plane orientation changed monotonically in each area, with an inclination of the order of 10−5 rad within the largest gate oxide area (5×5 mm2). © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1380406
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  • 81
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    Digitale Medien
    Crystalline to amorphous transition and band structure evolution in ion-damaged silicon studied by spectroscopic ellipsometry (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 659-669 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Crystalline to amorphous transition and subsequent microstructural evolution in silicon induced by Ar+-ion implantation over a wide range of ion fluences (6×1013–1×1017 cm−2) have been investigated by spectroscopic ellipsometry. In the evaluation of the optical and microstructural properties of the damaged layer, the contribution of the surface overlayer to the measured dielectric spectra was separated by fitting a multilayer model with an effective medium approximation. The best fit to the dielectric spectra for disordered silicon could be obtained by taking our highest-fluence implanted (fluence=1×1017 ions/cm2) amorphous silicon (a-Si) data as reference data instead of a-Si data available in the handbook. The derivative spectra as a function of fluence show a distinct and sharp transition from the crystalline to amorphous phase. The threshold fluence for this transition is derived from fitting. Evaluation of standard sum rules and optical moments for imaginary part of the pseudodielectric function reveals no substantial change in various physical parameters below the transition indicating their insensitivity to point defects, while it shows a large change with fluence above the threshold for amorphization. The disorder induced changes in the effective dielectric constant, number of valence electrons per atom participating in optical transition, Penn gap energy, average bond length, coordination number, effective dispersion oscillator energy, an average strength of the interband optical transition with fluence is discussed on the basis of microstructural evolution and corresponding band structure modification. It is also shown that the dielectric functions of damaged silicon are well represented by a sum of six classical Lorentz oscillators. With increasing fluences, each of the oscillator amplitude decreases and linewidth increases except for the 3.3 eV transition which shows increasing amplitude with fluence. These results are discussed in the context of short-range order/disorder and effective band gap reduction along with flattening of the bands with increasing fluence above the amorphization threshold. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1379055
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  • 82
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    Digitale Medien
    Bonding structure in amorphous carbon nitride: A spectroscopic and nuclear magnetic resonance study (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 675-681 
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    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Since the prediction of Liu and Cohen [Science 245, 841 (1989)] of the potential extraordinary mechanical properties of crystalline β-C3N4, many authors have attempted its synthesis. However, in most cases, the obtained materials are amorphous phases with a complex bonding structure. Their characterization is complicated due to the absence of a reference compound, the lack of long-range order, and the poor knowledge about their bonding structure. In this article, we present 1H, 13C, and 15N solid-state nuclear magnetic resonance (NMR) measurements for the determination of the bonding types in amorphous CNx films. NMR measurements do not require long-range order and are able to clearly identify the signals from the sp2- and sp3-bonded phases. The analysis of the data obtained by other characterization techniques, such as infrared spectroscopy, x-ray photoelectron spectroscopy, electron energy-loss spectroscopy, and x-ray absorption near-edge spectroscopy on the same sample, based on the information acquired by NMR, enables the description of a structure model for the studied amorphous-CNx phase prepared by dc-magnetron sputtering and to revise the interpretation found in the literature. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1380998
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  • 83
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    Digitale Medien
    Damage production in a-Si under low-energy self-atom bombardment (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 689-695 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Using a molecular-dynamics simulation, we study the buildup of damage in an a-Si specimen bombarded by Si atoms with energies between 10 and 150 eV for fluences up to 1.4×1015 cm−2, i.e., an equivalent of 2 monolayer growth. The production rate of overcoordinated atoms increases with the bombarding energy; we analyze its fluence and bombarding-energy dependence in detail. The number of undercoordinated atoms decreases for low-energy bombardment due to the saturation of dangling bonds at the surface; for higher bombarding energies, it increases slightly, but shows only little dependence on bombarding energy. The depth distribution of the damage, of the induced stress, and of the atom relocation in the target demonstrate that bombardment modifies the target at considerably greater depths than the ion range. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1380408
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  • 84
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    Carbon at pressures in the range 0.1–1 TPa (10 Mbar) (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 696-698 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Single-shock (Hugoniot) equation-of-state data of shock-compressed C (graphite) are reported at pressures of 480 and 760 GPa (7.6 Mbar). Graphite is shock-compressed completely into a diamond-like phase at pressures below 80 GPa. At pressures of 80–800 GPa comparison of an ensemble of experimental Hugoniot data for shock-compressed graphite and diamond, and theoretical calculations of the Hugoniots of graphite and diamond, and the 0 K isotherm of diamond suggest diamond melts at ∼300 GPa on the Hugoniot of graphite and that the diamond phase is the ground-state structure of C up to at least 600 GPa. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1381047
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  • 85
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    Digitale Medien
    Photoluminescence yield and decay time of proton irradiated and thermally annealed a-Si0.35C0.65:H alloys: A phenomenological model (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 682-688 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have studied the yield and the time evolution of pulsed laser induced photoluminescence in proton irradiated and thermally annealed amorphous hydrogenated silicon carbon alloys prepared by plasma enhanced chemical vapor deposition. Three major fluorescence decay channels have been observed with decay rates independent from proton irradiation and thermal annealing. Lack of correlation between yield and average decay time suggests a very simple phenomenological model which allows evaluation of the nonradiative time constant which is found to be linearly correlated with the photoluminescence yield. Our model suggests that radiative recombination occurs via exciton decay while the nonradiative recombination is driven by the trapping of carriers in defects states. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1380988
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  • 86
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    Digitale Medien
    Three-dimensional strain field calculations in multiple InN/AlN wurtzite quantum dots (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 699-704 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A detailed calculation of the three-dimensional elastic strain field and Gibbs free energy in and around InN/AlN wurtzite quantum dots is presented. The strain tensor is calculated by minimizing the Helmholtz free energy on a three-dimensional grid. The boundary conditions for a free surface are rigorously implemented to enable the strain field and Gibbs free energy at the surface to be modeled realistically. This has implications for the growth of additional layers of dots above a seed layer and can serve as an arbiter for determining possible nucleation sites. Results are presented for a single dot as well as coupled dots. The Gibbs free energy is seen to exhibit strong minima directly above a layer of seed dots, facilitating vertical ordering. Under certain conditions, satellite minima can also occur. Using the calculated strain field, the piezoelectric polarization field is also calculated. Because of the strong lattice mismatch, the strain field is quite large, particularly near the base and apex of the dots. This, in turn, leads to piezoelectric charges with magnitudes as high as 1014 cm−2 in regions of high strain. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1379561
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  • 87
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    Digitale Medien
    Statistical analysis of multiple cracking phenomenon of a SiOx thin film on a polymer substrate (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 713-719 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The progress of multiple cracking in a silicon oxide (SiOx) film deposited onto a polyethylene terephthalate substrate was analyzed using Monte Carlo simulation. The finite-element analysis, assuming elastoplastic behavior of the polymer substrate, was conducted to calculate the stress distributions in film fragments and was used in the simulation. The Weibull parameters of the film were determined from the scatter of crack onset strain. The simulation predicted successfully the crack density and the distribution of fragment lengths during the progress of multiple cracking. The validity of the shear lag analysis based on the unique stress criterion in a previous study was also evaluated. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1379355
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  • 88
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    Digitale Medien
    Optical and electronic properties of TiCxNy films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2737-2743 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The optical and electronic properties of TiCxNy(x+y∼1,0〈y〈1) thin films have been investigated by spectroscopic ellipsometry in the 1.5–4.5 eV energy range and by valence band x-ray photoemission spectroscopy as a function of the composition. The dielectric functions measured in the energy range of intraband transitions are analyzed in terms of a Drude-like approximation. Both the free plasma energy and the damping constant are observed to depend on the nitrogen content of the samples, suggesting a certain tunability of the optical and electronic properties of these films. Analysis of the valence band reveals that the C 2p band shifts toward higher binding energies upon an increase of the nitrogen content, in good agreement with the shift observed in the minimum of the optical reflectivity associated with the threshold of the interband transitions. The enhancement of the metallic character of the films as the nitrogen content increases is also evidenced by x-ray photoemission spectroscopy as a continuous intensity growth of the conduction band at the Fermi level. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1394157
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  • 89
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    Digitale Medien
    Two-dimensional arrays of magnetic nanostructures characterized using an underlying two-dimensional electron gas (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2623-2625 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have studied the magnetoresistance in an inclined magnetic field of a two-dimensional electron gas modulated by a two-dimensional array of thin cobalt nanostructures. At low fields, hysteretic behavior due to the magnetization of the elements was observed, and at higher fields magnetic commensurability (Weiss) oscillations were clearly seen. These magnetoresistance features only occurred when the in-plane component of the field was in the current flow direction. The commensurability oscillations behave exactly as predicted in a recent theory of two-dimensional surface superlattices. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1388574
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  • 90
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    Digitale Medien
    Comment on "Mechanisms for the anomalous dependence of carrier lifetime on injection level and photoconductance on light intensity" [J. Appl. Phys. 89, 332 (2001)] (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2621-2622 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In a recent article [S. Z. Karazhanov, J. Appl. Phys. 89, 332 (2001)], Karazhanov proposed a single-level recombination model as an explanation for the anomalous dependence of the carrier lifetime on injection level observed in cast multicrystalline silicon. This approach contrasts with previous models which involved the use of two distinct levels, one causing recombination and the other only trapping. The purpose of this Comment is to outline some critical considerations which suggest that only a two-level (or indeed a multilevel) model can satisfactorily explain the experimental observations. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1390306
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  • 91
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    Digitale Medien
    Simplified model for inelastic acoustic phonon scattering of holes in Si and Ge (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2626-2628 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: An averaging procedure is applied to inelastic acoustic–phonon scattering which leads to lattice-temperature-dependent constants for the phonon energy and the square of the phonon wave vector. The resulting scattering rate depends on energy only thus facilitating the search of after-scattering states in full-band Monte Carlo simulations. The model still accurately reproduces the velocity–field characteristics over a wide range of lattice temperatures, but in silicon the hot-hole tail of the energy distribution is strongly enhanced compared with the elastic equipartition approximation. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1388597
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  • 92
    Digitale Medien
    Digitale Medien
    Quantum efficiency of 1460 nm transition and energy transfer in Tm3+ doped glass (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1683-1687 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A self-calibrating quantum efficiency measurement technique is applied to the Tm3+ 3H4→3F4 transition at 1460 nm. The method requires only relative fluorescence measurements to determine the absolute quantum efficiency. Overlapping spectral features are separated using phase-shifted fluorescence from different levels at high modulation frequency. The effect of energy transfer between Tm3+ ions is studied, and it is found that Tm3+ concentrations on the order of 1018 cm−3 are needed to avoid complications from Tm3+–Tm3+ cross relaxation. Application of the technique to Tm3+ doped fluorozirconate glass gives good agreement with the expected quantum efficiency based on multiphonon relaxation theory. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1385572
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  • 93
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    Digitale Medien
    Lateral current spreading in unipolar semiconductor lasers (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1688-1691 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Lateral current spreading in shallow ridge processed unipolar semiconductor lasers is described using a two-dimensional flow model. In these devices, contrary to bipolar diode lasers, the density of carriers can be considered constant also in the active region. Therefore electron diffusion is a negligible effect and the spatial distribution of the current can be obtained by solving a two-dimensional differential equation for the electric potential. Our calculations prove that the major contribution to the current spreading takes place right before electrons enter the active region and is caused by the discontinuity of the conductivity at the cladding–active region interface. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1384490
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  • 94
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    Digitale Medien
    Hot-hole lasers in III–V semiconductors (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1692-1697 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Following the success of p-Ge hot-hole lasers, there is potential for using other semiconductor materials, notably III–V materials such as GaAs and InSb. Previous analysis had suggested that a large effective mass ratio between the heavy and light holes is advantageous, which implies that InSb would make an excellent hot-hole laser. Using our Monte Carlo simulation of both GaAs and InSb hot-hole lasers in combination with a rate equation model, we see that previously accepted criteria used to predict performance are not always reliable, and we suggest suitable alternatives. The simulation results include gain and gain bandwidth as a function of field strength and laser frequency, and alternative field orientations and photon polarizations are considered. Comparisons are made with bulk p-Ge systems. The optimum conditions predicted by our simulation could then be used in the design of quantum-well hot-hole lasers. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1384492
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  • 95
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    Digitale Medien
    Ion channeling, high resolution x-ray diffraction and Raman spectroscopy in strained quantum wells (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2824-2830 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: InGaAs strained epitaxial layers on GaAs are of considerable interest in semiconductor devices. An important feature is the critical thickness of the epitaxial layer beyond which relaxation occurs, affecting the device performance. With this in view, a series of such structures have been grown by organometallic vapor phase epitaxy and characterized by ion channeling, high resolution x-ray diffraction and Raman spectroscopy. The results of these three techniques are compared for the samples in this study which are fully strained, nominally and by experimental measurements. Beam steering effect that occurs at low energy channeling is also addressed. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1390301
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  • 96
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    Digitale Medien
    Electron beam induced current and cathodoluminescence study of proton irradiated InAsxP1−x/InP quantum-well solar cells (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2840-2846 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The effects of proton irradiation on strained InAsxP1−x/InP-based quantum well solar cells (QWSCs) have been investigated by the electron beam induced current (EBIC) and cathodoluminescence (CL) techniques. From analysis of the EBIC data, capture rates within the quantum well region have been estimated, from which the open circuit voltages of the cells were calculated and shown to agree well with the measured values. Diffusion lengths have been estimated from analysis of both the EBIC and CL measurements. The location of the energy levels of proton-induced defects and their effectiveness as nonradiative recombination centers have been determined from Arrhenius plots of the total CL intensity emitted from the quantum wells following irradiation. The results suggest that deeper and narrower quantum wells increase the sensitivity of QWSCs to radiation damage. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1389755
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  • 97
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    Digitale Medien
    Brillouin scattering investigation of elastic properties of Cu–Mo solid solution thin films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 756-762 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Brillouin scattering has been used to investigate the elastic properties of CuxMo1−x thin films with thicknesses varying from 200 up to 430 nm, elaborated by ion beam sputtering. Two compositions around Cu30Mo70 and Cu70Mo30 and pure Cu and Mo films have been studied. The samples are essentially randomly oriented polycrystals, leading to an isotropic effective symmetry. By fitting all the Brillouin spectral lines, two independent effective elastic constants of these films have been determined, allowing the calculation of their elastic moduli. Results indicate that pure copper thin films' elastic properties are similar to the bulk copper ones whereas pure molybdenum thin films' Young's modulus is weaker (about 10%) than the bulk Mo one. Concerning Cu–Mo solid solutions, elastic constants values lie between pure copper and molybdenum ones. Finally, the effect of annealing at 760 K on the mechanical properties of the solid solutions in relation with the microstructural evolution is discussed. The annealed solid solutions show a hardening of the elastic moduli with respect to the as-deposited samples, which is supposed to reflect their full demixing. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1378331
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  • 98
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    Digitale Medien
    Characterization of thin film electron emitters by scanning anode field emission microscopy (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 768-780 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Scanning anode field emission microscopy is used to map the electron emission current I(x,y) under constant anode voltage and the electron extraction voltage V(x,y) under constant emission current as a function of tip position on carbon based thin film emitters. The spatially resolved field enhancement factor β(x,y) is derived from V(x,y) maps. It is shown that large variations in the emission site density (ESD) and current density can be explained in terms of the spatial variation of the field enhancement β(x,y). Comparison of β(x,y) and I(x,y) shows that electron emission currents are correlated to the presence of high aspect ratio field enhancing structures. We introduce the concept of field enhancement distribution f(β), which is derived from β(x,y) maps to characterize the field emission properties of thin films. In this context f(β)dβ gives the number of emitters on a unit surface with field enhancement factors in the interval (β,β+dβ). It is shown experimentally for the carbon thin film emitters investigated that f(β) has an exponential dependence with regard to the field enhancement factor β. The field enhancement distribution function f(β) can be said to give a complete characterization of the thin film field emission properties. As a consequence, the emitted current density and ESD can be optimized by tuning f(β) of the emitting thin film. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1379559
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  • 99
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    Digitale Medien
    Study of the effect of grain boundary migration on hillock formation in Al thin films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 781-788 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have studied the effect of grain boundary migration on hillock formation in unpassivated Al thin films during thermal cycling. Hillocking occurs more frequently in Al films that experience grain growth during thermal cycling than in films with stabilized grain structures. The hillocking frequency is at least four times greater in the films that experience grain growth, as judged by the number of hillocks observed per initial grain boundary triple junction. This latter measure takes account of the smaller initial grain size in the film that experiences grain growth and shows that grain boundary migration itself must enhance the hillocking frequency. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1381045
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  • 100
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    Digitale Medien
    Physical model for the evaluation of solid–liquid interfacial tension in silicon (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 750-755 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We proposed a simple lattice model to describe a solid–liquid interface of silicon based on experimental facts and molecular dynamics simulation results, and evaluated the relationship between the interface structure and the interfacial tension by comparing the model with experimental values. As a result, the entropy was found to give a major contribution to the interfacial tension, and it was revealed that the difference of entropy due to lattice disorder of bulk liquid and interface structure is the dominant factor of the entropy contribution. Moreover, the solid–liquid bond energy, which is crucial to estimate the contribution of the enthalpy, was successfully derived. The present model can be also applied to be the semiconductor material which has a diamond structure or a zinc blende structure. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1379349
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