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  • 1
    Electronic Resource
    Electronic Resource
    A proposal for determination of band offset at a semiconductor heterojunction (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2162-2164 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose a method to determine the band offset of a heterojunction based on the elimination of the diffusion potential. In0.5Ga0.5P/GaAs heterojunction samples were used for demonstration of this method. As many error sources related to the determination of diffusion potential are avoided in our case, the more accurate value of 137±5 meV has been obtained for the conduction-band discontinuity. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361077
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  • 2
    Electronic Resource
    Electronic Resource
    Formation of extended states in disordered two-dimensional In0.4Ga0.6As/GaAs(311)B quantum dot superlattices (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 227-235 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Formation of extended states or minibands in two-dimensional (2D) In0.4Ga0.6As/GaAs(311)B quantum dot superlattices (QDSLs) is directly demonstrated in time-resolved photoluminescence measurements. At a low excitation density of 1 W/cm2, photoluminescence transients with ∼15 ps rise time and ∼25 ps decay time are observed. Both rise and decay times are found to increase with increasing excitation density. The excitons in 2D QDSLs exhibit different relaxation and recombination behaviors as compared to those in quantum wells and quantum dots. A physical model treating 2D QDSLs as disordered systems containing localized and extended states can successfully interpret all of the experimental observations. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373706
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  • 3
    Electronic Resource
    Electronic Resource
    Different responses of localized and extended excitons to exciton–exciton scattering manifested in excitation density-dependent photoluminescence excitation spectra (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6171-6176 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Excitation density-dependent photoluminescence excitation (PLE) measurements are performed for a disordered two-dimensional (2D) In0.40Ga0.60As/GaAs(311)B quantum dot superlattice (QDSL) containing localized and extended states separated by a mobility edge. For low excitation densities, the PLE spectrum is independent of excitation density. In the extended state region, it takes the shape of the absorption spectrum of the 2D QDSL. With increasing excitation density, the PLE spectral shape is dramatically changed. For excitation densities at which the state filling can be excluded, it is found that the different responses of localized and extended excitons to exciton–exciton scattering are responsible for the observed change in the PLE spectrum. A qualitative explanation for the evolution of the PLE spectrum is presented based on the excitation density-dependent capture, relaxation and recombination times obtained previously in time-resolved photoluminescence (TRPL) experiments. The mobility edge extracted from the modification of the PLE spectrum is in good agreement with that determined by TRPL measurements. To show the effect of coupling strength, a comparison of the excitation density-dependent PLE spectra is made between the 2D QDSL and a weekly coupled quantum dot array. It further confirms the existence of highly extended states in the 2D QDSL. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1371942
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  • 4
    Electronic Resource
    Electronic Resource
    Design of impurity band-based photonic crystal waveguides and delay lines for ultrashort optical pulses (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4321-4327 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the transmission of ultrashort pulses through impurity band-based photonic crystal waveguides. It is found that in the general case the transmission behavior depends strongly on the pulse width with respect to the resonance linewidth in impurity bands. By controlling the configuration of the waveguides, quasiflat impurity bands can be obtained in which the dependence of transmission on pulse width is very weak. As long as the pulse width is much narrower than the bandwidth, pulses can transmit through the quasiflat impurity bands with negligible distortion and attenuation. The conditions necessary for achieving quasiflat impurity bands are derived by examining waveguides of different configurations and properties. The mechanism responsible for the formation of quasiflat impurity bands is revealed from the discussion of the symmetry of single defect and their coupling. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1407318
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  • 5
    Electronic Resource
    Electronic Resource
    Coupling of defect pairs and generation of dynamical band gaps in the impurity bands of nonlinear photonic crystals for all-optical switching (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 2573-2577 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the coupling of two single defects in two-dimensional photonic crystals (PCs) with the same frequency but different field distributions. The defect pair like this is generally present in PCs as a combination of a reduced-size defect and an increased-size defect. In spite of the significant difference in field distribution, quasiflat impurity bands suitable for the transmission of ultrashort pulses can be achieved by properly choosing defect pairs. More importantly, the coupled cavity waveguide constructed with defect pairs offers an opportunity to establish a periodic modulation of defect modes with a control light. The dynamical band gap generated by the periodic modulation of defect modes suggests a high-efficiency all-optical switching operation in nonlinear PCs. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1446225
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  • 6
    Electronic Resource
    Electronic Resource
    Leveraging deep photonic band gaps in photonic crystal impurity bands (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2101-2103 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photonic band gaps can be generated in the impurity bands of photonic crystals formed by periodically placed defects. Even slight periodic modulation of the properties of these defects can open up very deep band gaps in the impurity bands. This phenomenon originates from the concentration of electromagnetic field at the defect regions, making electromagnetic wave extremely sensitive to the small changes of the defects. A dynamical photonic band gap in the impurity band created by a control light, provides a mechanism for constructing high-efficiency optical switches. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1362328
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  • 7
    Electronic Resource
    Electronic Resource
    Deep levels in undoped In0.5Ga0.5P and In0.5Ga0.5P0.99As0.01 grown on GaAs (100) substrates (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 872-874 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality In0.5Ga0.5P and In0.5Ga0.5P0.99As0.01 epitaxial layers on the GaAs (100) substrate have been grown by liquid phase epitaxy (LPE). Special attention is paid to the deep level transient spectroscopy (DLTS) and transient photoresponse in these samples. It is found that the epitaxial layers grown under the optimum P vapor pressure are free from deep levels and show a much longer photocarrier lifetime. We suggest that the deep level may be attributed to interstitial P atoms. From the photocarrier lifetime of different samples, we can conclude that the interstitial P atoms act as recombination centers. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113415
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  • 8
    Electronic Resource
    Electronic Resource
    Leakage current analysis for InyGa1−yPzAs1−z/AlxGa1−xAs double heterostructure lasers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6355-6359 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A band offset diagram for the heterojunction InyGa1−yPzAs1−z/AlxGa1−xAs based on the transitivity rule and our measured band offset for In0.5Ga0.5P/GaAs is given. A carrier leakage analysis is developed and explains the experimental observations in 670 nm visible InyGa1−yPzAs1−z/AlxGa1−xAs double heterostructure (DH) lasers. The analysis based on the performance of this laser verifies that our band offset is more accurate than previous values. In contrast to GaAs/AlxGa1−xAs, InGaPAs/InP and InGaP/AlGaInP DH lasers, we found that the leakage of holes, rather than of electrons, is responsible for the high threshold current density of this type of laser. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363654
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  • 9
    Electronic Resource
    Electronic Resource
    Geographical education in China (1990)
    Springer
    GeoJournal 20 (1990), S. 45-48 
    Details
    ISSN: 1572-9893
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geography
    Notes: Abstract Geography emerged as a separate school discipline in the educational system of China in the 20th century. The history of its development had several distinct periods, but is largely divided into pre and post 1949. After 1949, the educational system in general underwent major changes that resulted in increasingly greater amounts of geography in the curriculum, especially at the junior middle school level. A major influence during the period came from the Soviet Union's educational system. Following the Cultural Revolution, school curriculum went through another period of change. Three national Drafts of the Teaching Plan issued by the Ministry of Education since 1978 have each made changes in the teaching of geography. The most recent takes effect in 1990. Through teacher education in normal colleges and universities and inservice teacher training, China is addressing the persistent problems of teacher preparation and school equipment in geography.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02440046
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  • 10
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    Optical trapping and manipulation of magnetic holes dispersed in a magnetic fluid (2010)
    American Institute of Physics
    Details
    Publication Date: 2010-05-01
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics
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