ALBERT

Notes: An averaging procedure is applied to inelastic acoustic–phonon scattering which leads to lattice-temperature-dependent constants for the phonon energy and the square of the phonon wave vector. The resulting scattering rate depends on energy only thus facilitating the search of after-scattering states in full-band Monte Carlo simulations. The model still accurately reproduces the velocity–field characteristics over a wide range of lattice temperatures, but in silicon the hot-hole tail of the energy distribution is strongly enhanced compared with the elastic equipartition approximation. © 2001 American Institute of Physics.

Notes: The tunnel-assisted recombination current of a thin GaAs pn junction delta doped with Ti deep-level defects is modeled by 1D device simulation using a generalized Shockley–Read–Hall rate. The tunneling between band states and multiphonon sublevels of the recombination center, and the Poole–Frenkel effect are studied, varying the position of the delta–doped sheet and the junction width. Both field effects decisively influence the calculated current-voltage characteristics.

Notes: Benzene and (1,4)-dimethyl-cyclohexane monolayers were physisorbed on graphite covered Pt(111) surfaces. Exposure of benzene monolayers at 125 K to D atoms (1700 K) initially hydrogenates sp2 hybridized C atoms with a cross section of ca. 8 A(ring)2 producing C6H6D intermediates. Additional D atom reactions either transform this intermediate via a second hydrogenation reaction to cyclohexadiene-d2, C6H6D2, or restore benzene, C6H5D, via H abstraction. Once the aromaticity is broken, successive hydrogenation of the diene occurs rapidly generating the saturated cyclohexane-d6, C6H6D6. The C6H5D reaction product can undergo further H/D exchange reactions and, at any level of deuteration, the benzene species might get hydrogenated. Monolayers of the saturated hydrocarbon (1,4)-dimethyl-cyclohexane (DMCH) that are exposed to D atoms produce deuterated DMCH via successive abstraction/hydrogenation reactions. Thermal desorption mass spectra revealed that H atoms at the ring were exchanged with an apparent cross section of 1.7 A(ring)2. Methyl groups H atoms were exchanged much more slowly than ring H atoms. It was also observed that D exposed molecules/radicals exhibit a tendency to desorb from the surface, which is ascribed to the exothermicity of the reactions which lead to these species. © 1996 American Institute of Physics.

Notes: Several monolayers thick hydrogenated carbon films, C:H, were prepared by ion beam deposition from hydrocarbon process gases onto Pt and monolayer C covered Pt single crystal surfaces and investigated with Auger electron and thermal desorption spectroscopies in an UHV environment. Efficient deposition was achieved at ion energies in the 160–300 eV range. The deposited thickness and H/C ratio of the films depend on both, target temperature and H/C ratio of the process gas. It is shown that the C monolayer is crucial for efficient on-top deposition. Irrespective of the process gas used for deposition, the films grow as a C network and assume a constant H/C ratio at thicknesses greater than ∼ 3 monolayers. The H/C ratio of the films scale with the H content of the hydrocarbon process gas, a H/C ratio of 0.4 was obtained for ethane at 350 K substrate temperature. Upon thermally activated decomposition the films release molecular hydrogen as the major gaseous species and various hydrocarbons as minority species. The latter products signal chemical erosion of the film. It is shown that the rate determining step towards erosion via methane is a C–C bond breaking event which releases methyl radicals from the C network in the film. The activation energies for this step are determined as a 10 kcal/mol wide Gaussian distribution centered at 56 kcal/mol. Transport through the film is found to be so fast that it does not contribute to the observed gas release rates. © 1995 American Institute of Physics.

Notes: Few monolayers thick hydrogenated carbon films doped with boron (C/B:H) were prepared and investigated in an ultrahigh-vacuum environment by high-resolution electron energy loss, Auger electron, electron energy loss, and thermal desorption/decomposition spectroscopies with specific emphasis on their chemical erosion behavior as compared to their undoped C:H counterparts. Films of thicknesses ranging from 1 to about 10 monolayers, with a maximum B/C ratio of 0.5, were grown by ion-beam deposition at room temperature on a carrier consisting of a Pt(100) single-crystal surface covered with a graphite monolayer. The process gas used was a mixture of ethane and trimethylboron of varied compositions. While at zero boron concentration the films exhibit a graphiticlike structure with about equal amounts of carbon atoms in the sp2 and sp3 hybridization state, with increasing boron concentration the film structure becomes increasingly sp3 dominated. This is evidenced by decreasing HREELS loss intensities of the vibrational modes related to graphitic hydrogenated carbon, i.e., C=C, sp2 CH stretches, and aromatic CH deformations, but enhanced C–C and sp3 CHn stretch mode intensities. No BH vibrational modes have been observed at any doping level. In accordance with these observations, the C-272 eV Auger peak line shape underwent a change characteristic for a sp3-dominated network upon B doping. The π-plasmon energy was found to shift toward lower energies at C/B:H films which also is in line with a decrease of the carbon sp2 concentration, giving further support for a change to a less graphitic structure. The observed enhanced capacity for hydrogen in the films was found to correlate in a linear fashion with the increase of the fraction of carbon atoms in the sp3 configuration. The relative hydrogen content of the films, H/C, starting at 0.4 at zero boron content, was observed to increase, saturating at 0.75 for boron concentrations greater than 10%.This in turn coincides with a substantial growth of the film hydrogen capacity, as judged from the amount of H2 desorbing from the films between 500 and 1100 K upon thermal decomposition of the films. Although hydrogen originating from sp3 CH groups increased significantly, the amount of chemically eroded species, monitored by CnHm production in the thermal decomposition spectra, was unaffected by boron doping. However, the desorption maxima for either species, hydrogen and hydrocarbons, shift to lower temperatures at boron doped films. As reasons for the effect of B doping on the chemical constitution of C/B:H films and the resulting chemical erosion behavior, the capability of B to block the formation of aromatic structures is proposed. © 1995 American Institute of Physics.

Notes: High-temperature charge transport across an oxide-nitride-oxide sandwich of erasable programmable read only memories is mainly governed by the oxide conductivity as experimentally determined. It was verified in the examined devices that charge loss is not due to mobile ions. Since hole injection from the control gate into the nitride can be blocked by a 70-A(ring)-thick top oxide we conjecture that charge loss is due to leakage of electrons; however, the observed leakage current is too large to be explained by pure electrode-limited charge transport (Richardson emission and direct tunneling). It was also verified that field gain on asperities and along edges cannot increase the charge loss current to the required range. Numerical evaluation of trap tunneling and resonant tunneling indicated that both mechanisms are weakly temperature dependent while charge loss has a typical activation energy of 1.2 eV in the range of 250–350 °C. Consequently, a multiphonon-assisted tunneling mechanism is proposed where electrons stored on the floating gate tunnel to oxide traps, then are emitted into the nitride. The coupling of the trap level to oxide phonons results in virtual energy levels in the oxide which allow for more effective transition paths. As a consequence of the electron-phonon coupling, the emission occurs close to the oxide conduction-band edge at temperatures between 250 and 350 °C, producing a strong temperature dependence for the mechanism. © 1995 American Institute of Physics.

Notes: The rate formula of Shockley–Read–Hall (SRH) recombination is generalized for multiphonon transitions in an inhomogeneous electric field. A three-band model and Fermi statistics are used. The thermal generation and recombination at deep centers is tunnel assisted, if it occurs in the electric field of space-charge layers. Trap tunneling without phonon assistance turns out to be an exceptional case as well as the exclusive thermal multiphonon transition at zero field strength. Generally, every single recombination act is a combination of thermal capture and tunneling into the trap. A background of the order of an interband tunnel length contributes to the local rate. In the Boltzmann case the well known form of the SRH rate is derived, but with spatially variable lifetimes. Their position dependence directly reflects the shape of the electric field strength, if the traps are uniformly distributed. Depending on the external parameters, the calculation of the SRH current density leads to I-U characteristics, which exhibit interesting substructures in the case of certain discrete trap configurations. The theory is applied to a Hg0.8Cd0.2Te n+p junction and a GaAs surface potential.