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  • 1
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    Evaluation and Credentialing in Digital Music Communities (2022)
    The MIT Press | The MIT Press
    Details
    Publication Date: 2024-03-24
    Description: An examination of the use of digital badges as a reward for both casual online music evaluators and professional musicians. Professional and amateur musicians alike use social media as a platform for showcasing and promoting their music. Social media evaluation practices—rating, ranking, voting, “liking,” and “friending” by ordinary users, peers, and critics—have become essential promotional tools for musicians. In this report, H. Cecilia Suhr examines one recent development in online music evaluation: the use of digital badges to aid in assessment and evaluation. Digital badges have emerged in recent years as a potential credentialing method in informal learning environments. Suhr explores online music communities' use of digital badges as a reward for both casual music evaluators and musicians. Suhr examines the intersection of evaluation and gamification in Spotify's “Hit or Not” game, in which players assess a song's hit potential and receive digital badges as rewards, and considers the implications of turning music evaluation into a game. She then explores in detail the development of peer and professional critics on Indaba Music, a cloud-based collaboration platform where musicians earn badges through participating in contests. Suhr considers the emerging challenges and shortcomings of contest-based virtual communities and the value of badges, as perceived by Indaba musicians. She investigates to what extent digital badges can effectively represent and credit musicians' accomplishments and merits; describes the challenges, benefits, and shortcomings of digital badges as an evaluation mechanism; and compares the use of digital badges in assessing creativity to their use in learning and credentialing institutions.
    Keywords: Educational equipment and technology, computer-aided learning (CAL) ; Music ; Social media / social networking ; thema EDItEUR::A The Arts::AV Music ; thema EDItEUR::J Society and Social Sciences::JN Education::JNV Educational equipment and technology, computer-aided learning (CAL) ; thema EDItEUR::U Computing and Information Technology::UD Digital Lifestyle and online world: consumer and user guides::UDB Internet guides and online services::UDBS Social media / social networking
    Language: English
    Format: image/jpeg
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    E-BOOK
  • 2
    Electronic Resource
    Electronic Resource
    Der Durchschlag von Isolierfolien bei Wechselspannung mit Frequenzen bis 50 Hz und bei Gleichspannung (1974)
    Springer
    Electrical engineering 56 (1974), S. 217-222 
    Details
    ISSN: 1432-0487
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Description / Table of Contents: Contents The electric breakdown of thin plastic films was investigated at frequencies between 1 Hz and 50 Hz and at D.C. The experiments have shown that in case of solid environments for the electrodes and the specimen, before the breakdown of the specimen no partial discharges occur. At a rate of increase in voltage of more than 1 kV/s the breakdown voltage at D.C. is equal to the breakdown peak value at A.C. of 50 Hz. With the known thickness and the A.C. peak value the intrinsic electric strength can be calculated.
    Notes: Übersicht Das Durchschlagverhalten dünner Kunststoff-Folien wurde bei Frequenzen zwischen 1 Hz und 50 Hz und bei Gleichspannung experimentell untersucht. Aus den Ergebnissen kann gefolgert werden, daß bei Einbettung von Elektroden und Probe in feste Isolierstoffe keine Teilentladungen vor dem Durchschlag der Probe auftreten. Bei einer Spannungssteigerung von mehr als 1 kV/s ist die Durchschlagspannung bei Gleichspannung gleich dem Scheitelwert der Durchschlagspannung bei 50 Hz. Aus diesem kann dann bei bekannter Probendicke die „wahre” Durchschlagfestigkeit errechnet werden.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01496739
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  • 3
    Electronic Resource
    Electronic Resource
    Preparation of gold films by plasma-CVD (1987)
    Springer
    Applied physics 44 (1987), S. 171-175 
    Details
    ISSN: 1432-0630
    Keywords: 81.15 Gh ; 52.90 + z ; 68.55 + b
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract ThemetalorganicplasmaenhancedChemicalVapourDeposition (MOPECVD) of gold films at room temperature using dimethyl(2,4-pentane-dionato)gold(III) as starting material is reported. By adding oxygen or propene to the rf glow discharge, films of Au oxide and of a composite gold polymer, respectively, were obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00626420
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  • 4
    Electronic Resource
    Electronic Resource
    Aluminium oxide thin films prepared by plasma-enhanced chemical vapour deposition (1992)
    Springer
    Applied physics 55 (1992), S. 176-179 
    Details
    ISSN: 1432-0630
    Keywords: 81.15.Gh ; 52.90.+z ; 68.55.−a
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thin films of aluminium oxide have been deposited on glass, quartz, Si(100), steel, nickel, and aluminium by plasma-enhanced chemical vapour deposition (PECVD) using aluminium acetylacetonate (Al(acac)3) as precursor. The deposits are hard (up to 2370 HK) and show good adherence to the substrates. The influence of various experimental parameters on deposition rate, film composition and hardness has been studied. The bias turned out to be the most effective parameter.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00334220
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  • 5
    Electronic Resource
    Electronic Resource
    Formation of hafnium carbide thin films by plasma enhanced chemical vapor deposition from bis(η-cyclopentadienyl)dimethylhafnium as precursor (1995)
    Springer
    Applied physics 60 (1995), S. 285-288 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 81.15.Gh; 52.90.+z; 68.55.+b
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. Thin films of hafnium carbide have been deposited by plasma-enhanced chemical vapor deposition using bis(η-cyclopentadienyl)dimethylhafnium, Cp2Hf(CH3)2, as precursor in 13.56 MHz planar reactor. The influence of the various experimental parameters on film properties has been studied. The carbon content ranged from 11 to 40 weight% and increased with the deposition rate. The film hardness varied between 1300 and 2000 HK. Depending on the carbon content and power delivered in the discharge, the film resistivity and film density ranged from 271 to 105 µΩ⋅cm and from 3.4 to 10.4 g/cm3, respectively, and the film composition varied from HfC to hafnium containing a-C:H films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01538404
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  • 6
    Electronic Resource
    Electronic Resource
    Textured (100) yttria-stabilized zirconia thin films deposited by plasma-enhanced chemical vapor deposition (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 470-472 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of yttria-stabilized zirconia were deposited by plasma-enhanced chemical vapor deposition on quartz Si(100), Si(111), Ni, and the steels V2A and hastelloy at substrate temperatures (Ts): 673–873 K. The metal β-diketonates Y(thd)3 and Zr(thd)4 were used as precursors. The fully stabilized fluorite-type cubic structure was obtained over a wide range of yttria contents from 3.5 to 80 mol % (Ts=773 K). The quality of the films depended on the match of the thermal expansion coefficients of substrate and deposit.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105439
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  • 7
    Electronic Resource
    Electronic Resource
    Applications and trends in plasma-enhanced organometallic chemical vapour deposition
    Amsterdam : Elsevier
    Surface & Coatings Technology 49 (1991), S. 233-238 
    Details
    ISSN: 0257-8972
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0257-8972(91)90061-Z
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  • 8
    Electronic Resource
    Electronic Resource
    Separation of electrons and pions by a transition radiation detector using flash ADCs
    Amsterdam : Elsevier
    Nuclear Instruments and Methods in Physics Research Section A: 263 (1988), S. 319-324 
    Details
    ISSN: 0168-9002
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0168-9002(88)90966-7
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  • 9
    Electronic Resource
    Electronic Resource
    Laser induced CVD of gold using new precursors
    Amsterdam : Elsevier
    Applied Surface Science 54 (1992), S. 64-68 
    Details
    ISSN: 0169-4332
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0169-4332(92)90019-T
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  • 10
    Electronic Resource
    Electronic Resource
    Laser-induced chemical vapor deposition of rhodium
    Amsterdam : Elsevier
    Applied Surface Science 54 (1992), S. 56-59 
    Details
    ISSN: 0169-4332
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0169-4332(92)90017-R
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