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  • 68.55+b  (5)
  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 47 (1988), S. 199-203 
    ISSN: 1432-0630
    Keywords: 81.15 Gh ; 52.90+z ; 68.55+b
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The adhesion of copper to PTFE has been studied with regard to the influence of a pretreatment in discharges of reactive gases, such as O2 and CF4/O2, and a subsequent deposition of thin metallic interlayers of Pd, Pt, Au, and Cu by PECVD methods. Adhesion forces could be enhanced by about the factor of 10 compared with merely pretreated surfaces up to 5 N/mm, which, as scanning electron micrographs prove, corresponds to the tensile strength of the bulk material. SIMS spectra of the back surface of a peeled copper stripe show the typical signals of PTFE. The thermal stability of the layers was established by dipping the samples into a tin bath of 540 K. The enhanced adhesion is not only due to the changes in surface morphology by etching. It can be attributed to chemical effects, i. e. chemical bonds between substrate atoms and the interlayer, and physical effects, caused by implantation of metal ions into the upper surface layers accompanied by a probable electron transfer from PTFE to metal.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 48 (1989), S. 373-375 
    ISSN: 1432-0630
    Keywords: 81.15Gh ; 52.90+z ; 68.55+b
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thin films of rhodium have been prepared starting from dicarbonyl-2.4-pentadionato-rhodium(I), Rh(CO)2C5H7O2, by plasma enhanced CVD. The dependence of the deposition rate and film properties on substrate temperature, partial pressure of the organometallic and on hydrogen has been studied. Metal contents of ≈ 100% and thin-film resistivities as low as 5 times the bulk resistivity of rhodium have been achieved.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 49 (1989), S. 691-696 
    ISSN: 1432-0630
    Keywords: 81.15Gh ; 52.90+z ; 68.55+b
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Plasma-enhanced chemical vapour deposition of silver films has been performed using perfluoro-1-methylpropenylsilver as a precursor. Under most conditions of rf power, substrate temperature and gas composition shiny films with resistivities of ≦2 μω cm and impurities of ≦1 % are obtained.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1432-0630
    Keywords: 81.15Gh ; 52.90+z ; 68.55+b
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Novel volatile cyclooctatetraenyl-pentamethylcyclopentadienyl sandwich complexes have been used as precursors to deposit thin yttrium and rare earth oxide films by means of PECVD. These compounds form pure oxide films in plasmas of argon/oxygen or argon/water-vapour, in nitrous oxide, and carbon dioxide at substrate temperatures of 350–400° C and power densities of 1.0–1.5 W/cm2. The films were characterized by metal analysis, carbon analysis, XPS, CTEM electron diffraction, SEM micrographs, and FTIR spectra.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 51 (1990), S. 486-490 
    ISSN: 1432-0630
    Keywords: 81.15Gh ; 52.90+z ; 68.55+b
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Copper-oxide films are deposited by plasma-enhanced CVD using copper acetylacetonate as a precursor. The influence of various experimental parameters on deposition rate, film composition and resistivity have been studied. The substrate temperature and the bias are the parameters which affect these properties the most. An increase of the substrate temperature changes the phases of the deposit from Cu2O-CuO over Cu2O to Cu. At temperatures ≧500° C the deposition rates are high but the films consist mainly of metallic Cu. A negative bias enhances the deposition rate only slightly but has a strong effect on the film composition and can completely balance the oxygen deficiency. At a bias of −120 V the films consist of pure CuO even at temperatures ≧500° C.
    Type of Medium: Electronic Resource
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